CN108922876A - A kind of billon bonding wire and its manufacturing method - Google Patents

A kind of billon bonding wire and its manufacturing method Download PDF

Info

Publication number
CN108922876A
CN108922876A CN201810678000.5A CN201810678000A CN108922876A CN 108922876 A CN108922876 A CN 108922876A CN 201810678000 A CN201810678000 A CN 201810678000A CN 108922876 A CN108922876 A CN 108922876A
Authority
CN
China
Prior art keywords
annealing
bonding wire
billon
wire
billon bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810678000.5A
Other languages
Chinese (zh)
Other versions
CN108922876B (en
Inventor
周振基
周博轩
于锋波
彭政展
麦宏全
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shantou Junma Kaisa Coltd
Original Assignee
Shantou Junma Kaisa Coltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shantou Junma Kaisa Coltd filed Critical Shantou Junma Kaisa Coltd
Priority to CN201810678000.5A priority Critical patent/CN108922876B/en
Publication of CN108922876A publication Critical patent/CN108922876A/en
Application granted granted Critical
Publication of CN108922876B publication Critical patent/CN108922876B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
    • B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
    • B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45105—Gallium (Ga) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45109—Indium (In) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45123—Magnesium (Mg) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45157—Cobalt (Co) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention provides a kind of billon bonding wire, it is characterised in that contains Pd 0.5-2% by weight, Ag 15-30%, Cu 0.5-3%, Pt 0.1-2%, trace additives 2-200 ppm, surplus is gold；The trace additives are one of Ca, In, Co, Be, Ga, Mg, Ce and Ni or in which two or more combinations.The present invention provides a kind of manufacturing method of also above-mentioned billon bonding wire.Billon bonding wire of the invention has excellent high reliability and sulfuration resistant performance, and tensile strength is high, and solder joint zygosity is good, and can reduce cost.

Description

A kind of billon bonding wire and its manufacturing method
Technical field
The present invention relates to the bonding wires of IC, LED encapsulation, and in particular to a kind of billon bonding wire and its manufacturing method.
Background technique
Bonding wire（Bonding wire, also known as bonding line）It is connection chip and outer enclosure substrate（substrate）With/ Or multilayer circuit board（PCB）Main connection type.The development trend of bonding wire, from the line of production, mainly line footpath is subtle Change, the high workshop service life（floor life）And high spool length；Chemically on ingredient, mainly there is copper wire（Including bare copper wire, plating Palladium copper wire dodges gold plating palladium copper wire）Significantly replace gold thread in semiconductor field, and silver wire and silver alloy wire are in LED and part IC package applies upper substitution gold thread.Another important directions is the development of alloy gold wire, to further reduce the cost and protect Hold or improve the performance requirements of bonding process.
Due to the demand for development of miniaturization of electronic products and thin thinning, (Wafer is thinned by chip thickness in semicon industry Thinning), encapsulation uses chip stack (Die stacking), flip-chip (flip chip), wafer-level packaging（wafer level packaging）, the methods of 2.5D and 3D encapsulation cope with, however traditional bonding packaging（wire bonding）Still It is so mainstream packing forms.
Traditional gold bonding silk made of proof gold material has excellent chemical stability and electrical and thermal conductivity performance, Thus it is widely used as IC lead.But with rising steadily for international price of gold, the also rising all the way of the price of gold bonding silk is led It causes the cost of end product excessively high, is unfavorable for enterprise and improves competitiveness.In addition to this, the tensile strength of gold bonding silk is lower（Example Such as 20 microns of diameter of gold bonding silk, after welding, maximum pulling strength is less than 5 gram forces）, elongation percentage is not easily controlled.With Upper two aspects factor, which becomes, hinders gold bonding silk using the bottleneck with development.
To reduce cost, various bonding wires are continued to bring out out, such as Silver alloy wire, golden alloy wire and plating electrum bonding Silk etc., price is relatively low, is also able to satisfy the different demands of different clients；But the engagement for high-end LED, to product Property and reliability it is more demanding, the oxidation of conventional silver alloy and plating gold-silver alloy wire because of silver, it may appear that bonding oxidation, silver from The defects of sub- current potential migrates, solder joint eutectic is bad, is also not achieved the requirement of client in terms of reliability.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of billon bonding wire and this billon bonding wires Manufacturing method, this billon bonding wire have excellent high reliability and sulfuration resistant performance, and tensile strength is high, solder joint engagement Property is good, and can reduce cost.The technical solutions adopted are as follows：
A kind of billon bonding wire, it is characterised in that contain Pd 0.5-2%, Ag 15-30%, Cu 0.5-3%, Pt by weight 0.1-2%, trace additives 2-200 ppm, surplus are gold；The trace additives are Ca, In, Co, Be, Ga, Mg, Ce With one of Ni or in which two or more combinations.
The present invention promotes the tensile strength of wire rod, and can improve asking for billon solder joint associativity by the design of alloy Topic, also promotes the sulfuration resistant ability of wire rod, closes to obtain the gold that solder joint zygosity is good, sulfuration resistant ability is strong, tensile strength is high Gold bonding silk.For proof gold bonding wire, billon bonding wire of the invention for IC, LED encapsulation in, can reduce at Sheet and the problem for improving gold line tensile strength deficiency, and other performances can reach the performance requirement of proof gold bonding wire.
In billon bonding wire of the invention, except for gold, there are also the silver containing 15-30%, silver and gold can sufficiently be consolidated It is molten, play the role of solution strengthening, improve the tensile strength of wire rod, but since silver itself is easy vulcanization, will lead to wire rod and making All Shortcomings, therefore the copper of addition content 0.5-3% on this basis in terms of industry aspect and reliability（Cu）, can be effectively Improve the sulfuration resistant performance of wire rod, and improves reliability of the encapsulating products in thermal shock test；The platinum of 0.1-2% is added（Pt） Etc. the recrystallization temperature that can improve billon wire rod, wire rod fatigue durability in a high temperauture environment is promoted, it is disconnected that neck is effectively reduced The probability of line；The palladium of content 0.5-2% is added（Pd）, the anti-oxidant and sulfuration resistant performance of wire rod can be effectively improved, and improve envelope Fill reliability of the product in thermal shock test.Mechanical performance of suitable trace additives to improve wire rod, wherein Ca, In, Ga, Mg, Ce, Ni can effectively promote the bonding wire workability of billon, can enhance the adhesion property of wire rod and chip and substrate, It is promoted and trusts performance；Co, Be etc. can improve the recrystallization temperature of billon wire rod, promote wire rod endurance in a high temperauture environment Property, the probability of neck broken string is effectively reduced.
In a kind of preferred embodiment, above-mentioned trace additives contain the Mg's and 2-50ppm of Ca, 2-50ppm of 10-100ppm Ce.In another preferred embodiment, above-mentioned trace additives contain the In's and 2-50ppm of Ca, 2-50ppm of 10-80ppm Be.In another preferred embodiment, above-mentioned trace additives contain the Ca of the Ce and 10-50ppm of 2-100ppm.It is another preferred In scheme, above-mentioned trace additives contain the Co of the Ca and 2-20ppm of Ni, 10-100ppm of 2-80ppm.It is another preferred In scheme, above-mentioned trace additives contain the Ca of the Be and 2-80ppm of Ga, 2-60ppm of 2-50ppm.Using above various The combination of trace additives can effectively promote the recrystallization temperature of wire rod, improve the institutional framework of wire rod, promote wire rod in height Fatigue durability under warm environment, is effectively reduced the probability of neck broken string, and can enhance the adhesiveness of wire rod and chip and substrate Can, it is promoted and trusts performance.
The present invention also provides a kind of manufacturing methods of above-mentioned billon bonding wire, it is characterised in that includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt and trace additives are added in golden raw material in proportion, by vacuum melting and determined To casting process is continuously drawn, the wire rod that diameter is 6-8 millimeters is obtained；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, and acquisition diameter is 0.08-0.5mm（Millimeter）Bonding wire half Finished product；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Micron）Billon Bonding wire；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30-100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-800 DEG C, annealing rate 60- 120m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20-30 DEG C, obtains required billon bonding Silk.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Step（3）Intermediate annealing is carried out by para-linkage silk semi-finished product, processing hardening can be eliminated, make bonding wire semi-finished product With certain elongation percentage.
Billon bonding wire of the invention compared with prior art, has the advantages that：
（1）The billon design combined by special elements, the billon bonding wire of formation have excellent high reliability and Sulfuration resistant performance, tensile strength is high, and solder joint zygosity is good, high reliablity；
（2）The billon bonding wire that the present invention obtains has the HAZ of 45-55 um range, significantly reduces the camber of routing；
（3）It is moderate to obtain number after FAB burns ball for the billon bonding wire that the present invention obtains（The long axialite number in terms of FAB section Between 6-10）Symmetrical column crystal, it is ensured that the out of roundness of shape-changeable ball；
（4）Cost is relatively low.
Specific embodiment
Embodiment 1
The billon bonding wire of the present embodiment contains Pd 1.0%, Ag 30%, Cu 0.5%, Pt 1%, Ce 80ppm by weight, Ca 20ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt, Ce and Ca are added in golden raw material in proportion, continuously drawn by vacuum melting and orientation Casting process obtains the wire rod that diameter is 8 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.5mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 1000mm, and annealing temperature is 600 DEG C, annealing rate 50m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, annealing rate 80m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 25 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 2
The billon bonding wire of the present embodiment contains Pd 1.5%, Ag 20%, Cu 0.6%, Pt 2%, Ca 80ppm by weight, Surplus is gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt and Ca are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation Technique obtains the wire rod that diameter is 8 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.2mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 2000mm, and annealing temperature is 500 DEG C, annealing rate 100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 800 DEG C, annealing rate 60m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 3
The billon bonding wire of the present embodiment contains Pd 2% by weight, Ag 15%, Cu 1%, Pt 0.2%, Ni 100ppm, remaining Amount is gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt and Ni are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation Technique obtains the wire rod that diameter is 6 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.08mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 600mm, and annealing temperature is 800 DEG C, annealing rate 30m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 1000mm, and annealing temperature is 300 DEG C, annealing rate 80m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 4
The billon bonding wire of the present embodiment contains Pd 0.5%, Ag 25%, Cu 3%, Pt 0.1%, Ca by weight 100ppm, Mg 50ppm, Ce 50ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt, Ca, Mg and Ce are added in golden raw material in proportion, connected by vacuum melting and orientation It is continuous to draw casting process, obtain the wire rod that diameter is 6 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.4mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 1500mm, and annealing temperature is 700 DEG C, annealing rate 50m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 400 DEG C, annealing rate 90m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 5
The billon bonding wire of the present embodiment contains Pd 0.8%, Ag 18%, Cu 1.5%, Pt 1.2%, Ca by weight 50ppm, In 40ppm, Be 50ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt, Ca, In and Be are added in golden raw material in proportion, connected by vacuum melting and orientation It is continuous to draw casting process, obtain the wire rod that diameter is 8 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.3mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 1200mm, and annealing temperature is 600 DEG C, annealing rate 60m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 800 DEG C, annealing rate 100m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 25 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 6
The billon bonding wire of the present embodiment contains Pd 1.5%, Ag 20%, Cu 2.5%, Pt 0.6%, Ni by weight 80ppm, Ca 80ppm, Co 20ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Cu, Pt, Ni, Ca and Co are added in golden raw material in proportion, connected by vacuum melting and orientation It is continuous to draw casting process, obtain the wire rod that diameter is 6 millimeters；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.4mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, acquisition diameter is 15-50 um（Such as 20 um）Gold Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 1000mm, and annealing temperature is 600 DEG C, annealing rate 100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 1000mm, and annealing temperature is 600 DEG C, annealing rate 100m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
The above embodiments 1-6 billon bonding wire obtained is tested for the property（Comparative example is using the routine bought in the market Gold content is the alloy gold wire of 80%wt）.
1, the test method of HAZ length
Embodiment 1-6 and the wire rod of comparative example are subjected to the cutting of FIB (Focused Ion beam) focused ion beam, utilize SEM (scanning electron microscopy) scanning electron microscope is observed, by comparing the crystal size of different wire positions Variation, the length information of available HAZ.
2, ageing testing method
Wire rod obtained by embodiment 1-6 and comparative example reliability difference mainly in thermal shock part.Specific degradation item Part such as table 1.Test packing forms be LED encapsulation in SMD2835, BSOB routing, packaging silicon rubber use DOW CORNING OE6650, For packaged sample after each thermal shock for completing 50 circulations, seeing whether can also be electric bright, records the number for the dead lamp that fails.
Table 1
3, vulcanize test method
The good sample lamp bead of encapsulating is placed in closed container（Distil certain sulphur concentration）, 85 DEG C of constant temperature；One timing of vulcanization Between after take out test light decay.
The performance test results are as shown in table 2.
Table 2
Note：Shape-changeable ball out of roundness number of non-compliances is the summation of the undesirable alternating compression ball of out of roundness and eccentric sphere.
Above-mentioned the performance test results show：
1, wire rod of the HAZ that the billon bonding wire of 1-6 of the embodiment of the present invention obtains well below comparative example.
2, the routing performance of the billon bonding wire of 1-6 of the embodiment of the present invention（Shape-changeable ball out of roundness）It is substantially better than comparison Example.
The excellent routing performance of wire rod of the present invention, which is primarily due to the wire rod, to ensure stable burning ball performance（Including The property placed in the middle of FAB is to prevent the symmetrical and suitable column crystal of number generated in eccentric sphere and FAB）.
3, relative to comparative example, reliability is greatly improved the billon bonding wire of 1-6 of the embodiment of the present invention.
After the thermal shock that the billon bonding wire of 1-6 of the embodiment of the present invention is recycled by 550, still without the dead lamp feelings that fail Condition（After the thermal shock that wherein embodiment 4,6 is recycled by 600, still without the dead lamp situation that fails）；And comparative example has then gone out Now fail dead lamp（Comparative example can only be subjected to the thermal shock of 400 circulations）.This illustrates that the reliability of the technology of the present invention wire rod is higher.
4, vulcanize
The billon bonding wire of 1-6 of the embodiment of the present invention is tested through over cure, and light decay is below 18%；And comparative example light decay exists 25%.This illustrates that the sulfuration resistant ability of the technology of the present invention wire rod is stronger.

Claims (7)

1. a kind of billon bonding wire, it is characterised in that contain Pd 0.5-2%, Ag 15-30%, Cu 0.5-3%, Pt by weight 0.1-2%, trace additives 2-200 ppm, surplus are gold；The trace additives are Ca, In, Co, Be, Ga, Mg, Ce With one of Ni or in which two or more combinations.
2. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 10-100ppm Ca, 2-50ppm Mg and 2-50ppm Ce.
3. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 10-80ppm's The Be of the In and 2-50ppm of Ca, 2-50ppm.
4. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-100ppm's The Ca of Ce and 10-50ppm.
5. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-80ppm's The Co of the Ca and 2-20ppm of Ni, 10-100ppm.
6. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-50ppm's The Ca of the Be and 2-80ppm of Ga, 2-60ppm.
7. the manufacturing method of billon bonding wire described in any one of claims 1-6, it is characterised in that include the following steps：
（1）Founding：Pd, Ag, Cu, Pt and trace additives are added in golden raw material in proportion, by vacuum melting and determined To casting process is continuously drawn, the wire rod that diameter is 6-8 millimeters is obtained；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product that diameter is 0.08-0.5mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain the billon that diameter is 15-50 um and be bonded Silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas Atmosphere, annealing furnace effective length are 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30-100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-800 DEG C, annealing rate 60- 120m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20-30 DEG C, obtains required billon bonding Silk.
CN201810678000.5A 2018-06-27 2018-06-27 Gold alloy bonding wire and manufacturing method thereof Active CN108922876B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810678000.5A CN108922876B (en) 2018-06-27 2018-06-27 Gold alloy bonding wire and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810678000.5A CN108922876B (en) 2018-06-27 2018-06-27 Gold alloy bonding wire and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN108922876A true CN108922876A (en) 2018-11-30
CN108922876B CN108922876B (en) 2020-05-29

Family

ID=64423802

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810678000.5A Active CN108922876B (en) 2018-06-27 2018-06-27 Gold alloy bonding wire and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN108922876B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109767991A (en) * 2019-01-15 2019-05-17 江西蓝微电子科技有限公司 A kind of preparation method of high gold-content alloy bonding wire
CN110117733A (en) * 2019-04-30 2019-08-13 汕头市骏码凯撒有限公司 A kind of electrum bonding wire and its manufacturing method
CN112342426A (en) * 2020-11-10 2021-02-09 汕头市骏码凯撒有限公司 Novel silver alloy bonding wire and manufacturing method thereof
CN113862504A (en) * 2021-12-01 2021-12-31 北京达博有色金属焊料有限责任公司 Gold alloy and alloy product and preparation method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224767A (en) * 1997-11-29 1999-08-04 W·C·赫罗伊斯有限公司 Gold alloy wire and its production method and application
CN1235376A (en) * 1998-05-13 1999-11-17 W·C·贺利氏股份有限两合公司 Thin wire of gold alloy and manufacture and use thereof
CN1594620A (en) * 2004-07-06 2005-03-16 贺利氏招远贵金属材料有限公司 Alloy gold wire and manufacturing method thereof
CN102776407A (en) * 2012-07-31 2012-11-14 深圳市中汇贵金属有限公司 Gold alloy and preparation method thereof
CN103155129A (en) * 2011-06-10 2013-06-12 田中电子工业株式会社 High-strength, high-elongation-percentage gold alloy bonding wire
CN103842529A (en) * 2011-03-01 2014-06-04 田中电子工业株式会社 Bonding wire of gold (Au) alloy
CN105470228A (en) * 2015-12-05 2016-04-06 烟台一诺半导体材料有限公司 Insulating coating anti-corrosion alloy bonding wire and preparation method therefor
CN105908002A (en) * 2016-04-22 2016-08-31 汕头市骏码凯撒有限公司 Gold alloy bonding wire and manufacturing method thereof
CN107665874A (en) * 2017-09-07 2018-02-06 汕头市骏码凯撒有限公司 A kind of compound bonding wire of billon and its manufacture method for coating gold

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224767A (en) * 1997-11-29 1999-08-04 W·C·赫罗伊斯有限公司 Gold alloy wire and its production method and application
CN1235376A (en) * 1998-05-13 1999-11-17 W·C·贺利氏股份有限两合公司 Thin wire of gold alloy and manufacture and use thereof
CN1594620A (en) * 2004-07-06 2005-03-16 贺利氏招远贵金属材料有限公司 Alloy gold wire and manufacturing method thereof
CN103842529A (en) * 2011-03-01 2014-06-04 田中电子工业株式会社 Bonding wire of gold (Au) alloy
CN103155129A (en) * 2011-06-10 2013-06-12 田中电子工业株式会社 High-strength, high-elongation-percentage gold alloy bonding wire
CN102776407A (en) * 2012-07-31 2012-11-14 深圳市中汇贵金属有限公司 Gold alloy and preparation method thereof
CN105470228A (en) * 2015-12-05 2016-04-06 烟台一诺半导体材料有限公司 Insulating coating anti-corrosion alloy bonding wire and preparation method therefor
CN105908002A (en) * 2016-04-22 2016-08-31 汕头市骏码凯撒有限公司 Gold alloy bonding wire and manufacturing method thereof
CN107665874A (en) * 2017-09-07 2018-02-06 汕头市骏码凯撒有限公司 A kind of compound bonding wire of billon and its manufacture method for coating gold

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109767991A (en) * 2019-01-15 2019-05-17 江西蓝微电子科技有限公司 A kind of preparation method of high gold-content alloy bonding wire
CN109767991B (en) * 2019-01-15 2022-05-31 江西蓝微电子科技有限公司 Preparation method of high-gold-alloy bonding wire
CN110117733A (en) * 2019-04-30 2019-08-13 汕头市骏码凯撒有限公司 A kind of electrum bonding wire and its manufacturing method
CN112342426A (en) * 2020-11-10 2021-02-09 汕头市骏码凯撒有限公司 Novel silver alloy bonding wire and manufacturing method thereof
CN113862504A (en) * 2021-12-01 2021-12-31 北京达博有色金属焊料有限责任公司 Gold alloy and alloy product and preparation method thereof

Also Published As

Publication number Publication date
CN108922876B (en) 2020-05-29

Similar Documents

Publication Publication Date Title
CN108922876A (en) A kind of billon bonding wire and its manufacturing method
CN107665874A (en) A kind of compound bonding wire of billon and its manufacture method for coating gold
TWI518706B (en) Bonding wire for semiconductor devices
CN105803245B (en) A kind of high-performance bonding alloy wire and preparation method and application
CN108796269A (en) Billon bonding wire and its manufacturing method
KR101536554B1 (en) Bonding wire
CN108122877B (en) Thin gold-copper alloy wire and method for manufacturing same
CN108183075A (en) A kind of silver alloy bonding wire and its manufacturing method
WO2013018238A1 (en) Ball bonding wire
KR101905942B1 (en) Bonding wire
CN108823453A (en) The low golden billon bonding wire of one kind and its manufacturing method
JP2010245390A (en) Bonding wire
CN105908002A (en) Gold alloy bonding wire and manufacturing method thereof
CN105063407A (en) Sliver alloy bonding wire for LED packaging, and manufacturing method thereof
CN108598058B (en) Copper alloy bonding wire and manufacturing method thereof
TW201432716A (en) Silver alloy soldering wires for semiconductor packaging
CN110117733A (en) A kind of electrum bonding wire and its manufacturing method
CN108796285A (en) A kind of silver alloy bonding wire and its manufacturing method
WO2012117512A1 (en) BONDING WIRE OF GOLD (Au) ALLOY
CN112342426A (en) Novel silver alloy bonding wire and manufacturing method thereof
CN108823463A (en) One Albatra metal bonding wire and its manufacturing method
CN109411438A (en) A kind of copper alloy wire and its manufacturing method
CN108598006A (en) Silver alloy bonding wire and its manufacturing method
JP5996853B2 (en) Ball bonding wire
JP2013135042A (en) Ball bonding wire

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant