CN108796269A - Billon bonding wire and its manufacturing method - Google Patents
Billon bonding wire and its manufacturing method Download PDFInfo
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- CN108796269A CN108796269A CN201810703660.4A CN201810703660A CN108796269A CN 108796269 A CN108796269 A CN 108796269A CN 201810703660 A CN201810703660 A CN 201810703660A CN 108796269 A CN108796269 A CN 108796269A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
A kind of billon bonding wire, it is characterised in that contain Pd 2.1-8%, Ag 20-30%, Pt 2.1-6% by weight, trace additives 2-200 ppm, surplus is gold；The trace additives are one kind or in which two or more combinations in Ca, In, Co, Be, Ga, Mg, Ce and Ni.The present invention also provides a kind of manufacturing methods of above-mentioned billon bonding wire.The compound bonding wire of billon of the present invention has excellent tensile strength, is suitble to the encapsulation of low bank and long bank, while sulfuration resistant ability is strong and reliability is high, cost is relatively low.
Description
Technical field
The present invention relates to the bonding wires of IC, LED encapsulation, and in particular to a kind of billon bonding wire and its manufacturing method.
Background technology
Bonding wire（Bonding wire, also known as bonding line）It is connection chip and outer enclosure substrate（substrate）With/
Or multilayer circuit board（PCB）Main connection type.The development trend of bonding wire, from the line of production, mainly line footpath is subtle
Change, the high workshop service life（floor life）And high spool length；Chemically on ingredient, mainly there is copper wire（Including bare copper wire, plating
Palladium copper wire dodges gold plating palladium copper wire）Significantly replace gold thread in semiconductor applications, and silver wire and silver alloy wire are in LED and part
IC package applies upper substitution gold thread.Another important directions is the development of alloy gold wire, to further reduce the cost and protect
Hold or improve the performance requirements of bonding process.
Due to the demand for development of miniaturization of electronic products and thin thinning, (Wafer is thinned by chip thickness in semicon industry
Thinning), encapsulation is using chip stack (Die stacking), flip-chip (flip chip), wafer-level packaging（wafer
level packaging）, the methods of 2.5D and 3D encapsulation cope with, however traditional bonding packaging（wire bonding）Still
It is so mainstream packing forms.
Traditional gold bonding silk made of proof gold material has excellent chemical stability and electrical and thermal conductivity performance,
Thus it is widely used as IC leads.But with rising steadily for international price of gold, the price also rising all the way of gold bonding silk is led
It causes the cost of end product excessively high, is unfavorable for enterprise and improves competitiveness.In addition to this, the tensile strength of gold bonding silk is relatively low（Example
Such as 20 microns of gold bonding silk of diameter, after welding, maximum pulling strength is less than 5 gram forces）, elongation percentage is not easily controlled.With
Upper two aspects factor, which becomes, hinders gold bonding silk using the bottleneck with development.
To reduce cost, various bonding wires are continued to bring out out, such as Silver alloy wire, golden alloy wire and plating electrum bonding
Silk etc., price is relatively low, can also meet the different demands of different clients；But for high-end LED, the engagement to product
Property and reliability it is more demanding, the oxidation of conventional silver alloy and plating gold-silver alloy wire because of silver, it may appear that bonding oxidation, silver from
The defects of sub- current potential migrates, solder joint eutectic is bad, is also not achieved the requirement of client in terms of reliability.
Invention content
Technical problem to be solved by the invention is to provide a kind of billon bonding wire and this billon bonding wires
Manufacturing method, this compound bonding wire of billon have excellent tensile strength, are suitble to the encapsulation of low bank and long bank, simultaneously
Sulfuration resistant ability is strong and reliability is high, and cost is relatively low.The technical solution of use is as follows：
A kind of billon bonding wire, it is characterised in that micro by weight containing Pd 2.1-8%, Ag 20-30%, Pt 2.1-6%
Addition element 2-200 ppm, surplus are gold；The trace additives are one kind in Ca, In, Co, Be, Ga, Mg, Ce and Ni
Or in which two or more combination.
The present invention is suitble to the encapsulation of low bank and long bank, promotes wire rod by the design of alloy formula, crystal grain thinning
Hardness and the heat affected area for reducing soldered ball neck, the problem of billon solder joint associativity can be improved by the design of alloy formula,
The Pd of high level more promotes the sulfuration resistant ability of wire rod simultaneously, and to obtain, solder joint zygosity is good, sulfuration resistant ability is strong, tension
The compound bonding wire of the high billon of intensity.For proof gold bonding wire, the compound bonding wire of billon of the invention for IC,
In LED encapsulation, cost can be reduced and improve the problem of gold line tensile strength deficiency, and other performances can reach proof gold key
The performance requirement of plying.
In the compound bonding wire of billon of the present invention, except for gold, also the silver containing 20-30%, silver can be fully with gold
Solid solution, plays the role of solution strengthening, improves the tensile strength of wire rod, but since silver itself is easy vulcanization, wire rod can be caused to exist
All Shortcomings, therefore the platinum of addition content 2.1-6% on this basis in terms of workability aspect and reliability（Pt）, can be effective
Ground improves the sulfuration resistant performance of wire rod, and improves reliability of the encapsulating products in thermal shock test；It is added content 2.1-8%'s
Palladium（Pd）, the anti-oxidant and sulfuration resistant performance of wire rod can be effectively improved, and improve encapsulating products in thermal shock test can
By property.To improve the mechanical performance of wire rod, wherein Ca, In, Ga, Mg, Ce, Ni can be promoted effectively suitable trace additives
The bonding wire workability of billon can enhance the adhesion property of wire rod and chip and substrate, promoted and trust performance；Co, Be etc. can be carried
The recrystallization temperature of high gold-content alloy wire rod promotes wire rod fatigue durability in a high temperauture environment, effectively reduces the several of neck broken string
Rate.
In a kind of preferred embodiment, above-mentioned trace additives contain the Mg's and 2-50ppm of Ca, 2-50ppm of 10-100ppm
Ce.In another preferred embodiment, above-mentioned trace additives contain the In's and 2-50ppm of Ca, 2-50ppm of 10-80ppm
Be.In another preferred embodiment, above-mentioned trace additives contain the Ca of the Ce and 10-50ppm of 2-100ppm.It is another preferred
In scheme, above-mentioned trace additives contain the Co of the Ca and 2-20ppm of Ni, 10-100ppm of 2-80ppm.It is another preferred
In scheme, above-mentioned trace additives contain the Ca of the Ga and 2-80ppm of 2-100ppm.Using any of the above trace additives
Combination, can effectively promote the recrystallization temperature of wire rod, improve the institutional framework of wire rod, it is resistance in a high temperauture environment to promote wire rod
Fatigability, effectively reduces the probability of neck broken string, and can enhance the adhesion property of wire rod and chip and substrate, promotes reliability
Energy.
The present invention also provides a kind of manufacturing methods of above-mentioned billon bonding wire, it is characterised in that includes the following steps：
（1）Founding：Pd, Ag, Pt and trace additives are added in golden raw material in proportion, connected by vacuum melting and orientation
It is continuous to draw casting process, obtain a diameter of 6-8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains a diameter of 0.08-0.5mm（Millimeter）Bonding wire half
Finished product；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Micron）Billon
Bonding wire；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30-100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-800 DEG C, annealing rate 60-
120m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20-30 DEG C, obtains required billon bonding
Silk.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Step（3）Intermediate annealing is carried out by para-linkage silk semi-finished product, processing hardening can be eliminated, make bonding wire semi-finished product
With certain elongation percentage.
The billon bonding wire of the present invention compared with prior art, has the advantages that：
（1）The billon design combined by special elements, the billon bonding wire of formation have excellent sulfuration resistant performance；
（2）The billon bonding wire that the present invention obtains, crystal grain is more tiny, and tensile strength is high, and solder joint zygosity is good, and reliability is high；
（3）Processing procedure of this alloy gold wire without surface layer cladding gold, performance achievees the effect that the alloy gold wire of surface layer cladding gold, into one
Step reduces cost.
Specific implementation mode
Embodiment 1
The billon bonding wire of the present embodiment contains Pd 4.0%, Ag 25%, Pt 4%, Ca 180ppm by weight, and surplus is
Gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt and Ca are added in golden raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.5mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 1000mm, and annealing temperature is 600 DEG C, annealing rate 50m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, annealing rate 80m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 25 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 2
The billon bonding wire of the present embodiment contains Pd 2.2%, Ag 30%, Pt 2.5%, Ca 80ppm, Mg by weight
50ppm, Ce 20ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt, Ca, Mg and Ce are added in golden raw material in proportion, continuously drawn by vacuum melting and orientation
Casting process obtains a diameter of 8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.2mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 2000mm, and annealing temperature is 500 DEG C, annealing rate 100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 800 DEG C, annealing rate 60m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 3
The billon bonding wire of the present embodiment contains Pd 8%, Ag 20%, Pt 3.5%, Ni 100ppm by weight, and surplus is
Gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt and Ni are added in golden raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.08mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 600mm, and annealing temperature is 800 DEG C, annealing rate 30m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 1000mm, and annealing temperature is 300 DEG C, annealing rate 80m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 4
The billon bonding wire of the present embodiment contains Pd 7.5%, Ag 25%, Pt 6%, Ca 50ppm, In by weight
50ppm, Be 50ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt, Ca, In and Be are added in golden raw material in proportion, continuously drawn by vacuum melting and orientation
Casting process obtains a diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.4mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 1500mm, and annealing temperature is 700 DEG C, annealing rate 50m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 400 DEG C, annealing rate 90m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 5
The billon bonding wire of the present embodiment contains Pd 2.8%, Ag 22%, Pt 4.2%, Ca 80ppm, Ga by weight
80ppm, surplus are gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt, Ca and Ga are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation
Technique obtains a diameter of 8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.35mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 1200mm, and annealing temperature is 600 DEG C, annealing rate 60m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 800 DEG C, annealing rate 100m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 25 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
Embodiment 6
The billon bonding wire of the present embodiment contains Pd 5.5%, Ag 20%, Pt 5%, Ca 50ppm, Ce 50ppm by weight,
Surplus is gold.
In the present embodiment, the manufacturing method of billon bonding wire includes the following steps：
（1）Founding：Pd, Ag, Pt, Ca and Ce are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation
Technique obtains a diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.4mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain a diameter of 15-50 um（Such as 20 um）Gold
Alloy bonding silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 1000mm, and annealing temperature is 600 DEG C, annealing rate 100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 1000mm, and annealing temperature is 600 DEG C, annealing rate 100m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 30 DEG C, obtains required billon bonding wire.
To step（5）Obtained billon bonding wire is wound, and can be coiled into the finished product of 500 meters/volume or 1000 meters/volume.
The above example 1-6 billon bonding wires obtained are tested for the property（Comparative example is using the routine bought in the market
Gold content is the alloy gold wire of 80%wt）.
1, the test method of HAZ length
Embodiment 1-6 and the wire rod of comparative example are subjected to the cutting of FIB (Focused Ion beam) focused ion beam, utilize SEM
(scanning electron microscopy) scanning electron microscope is observed, by comparing the crystal size of different wire positions
Variation, the length information of HAZ can be obtained.
2, ageing testing method
Wire rod obtained by embodiment 1-6 and comparative example is in the difference of reliability mainly in thermal shock part.Specific degradation item
Part such as table 1.Experiment packing forms be LED encapsulation in SMD2835, BSOB routings, packaging silicon rubber use DOW CORNING OE6650,
For packaged sample after each thermal shock for completing 50 cycles, seeing whether can also be electric bright, records the number for the dead lamp that fails.
Table 1
| Test condition | Duration (Hour)/bout (Cycle) |
| 305 alloy, 8 warm area standard circumfluence welds (265 DEG C) | 1 |
| - 40 DEG C of * 30min-100 DEG C * 30min (conversion time is less than 20 seconds) | 50/100/…/500 |
3, vulcanize test method
The good sample lamp bead of embedding is positioned in closed container（Distil certain sulphur concentration）, 85 DEG C of constant temperature；One timing of vulcanization
Between after take out test light decay.
The performance test results are as shown in table 2.
Table 2
Note：Shape-changeable ball out of roundness number of non-compliances is the summation of the undesirable alternating compression ball of out of roundness and eccentric sphere.
Above-mentioned the performance test results show：
1, the HAZ that the compound bonding wire of the billon of 1-6 of the embodiment of the present invention obtains is suitable with the compound bonding wire of billon.
2, the routing performance of the compound bonding wire of the billon of 1-6 of the embodiment of the present invention（Shape-changeable ball out of roundness）It is multiple with billon
It is suitable to close bonding wire.
The excellent routing performance of wire rod of the present invention, which is primarily due to the wire rod, to ensure stable burning ball performance（Including
The property placed in the middle of FAB is to prevent the suitable column crystal of symmetrical and number generated in eccentric sphere and FAB）.
3, the compound bonding wire of the billon of 1-6 of the embodiment of the present invention is relative to comparative example, reliability and billon compound keys
Plying is suitable.
4, vulcanize
The billon bonding wire of 1-6 of the embodiment of the present invention is tested through over cure, and light decay is below 18%；It can by alloy design
Achieve the effect that cladding gold preferably reduces cost to eliminate the processing procedure process of cladding gold.
Claims (7)
1. a kind of billon bonding wire, it is characterised in that micro- by weight containing Pd 2.1-8%, Ag 20-30%, Pt 2.1-6%
Addition element 2-200 ppm are measured, surplus is gold；The trace additives are one in Ca, In, Co, Be, Ga, Mg, Ce and Ni
Kind or in which two or more combinations.
2. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 10-100ppm
Ca, 2-50ppm Mg and 2-50ppm Ce.
3. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 10-80ppm's
The Be of the In and 2-50ppm of Ca, 2-50ppm.
4. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-100ppm's
The Ca of Ce and 10-50ppm.
5. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-80ppm's
The Co of the Ca and 2-20ppm of Ni, 10-100ppm.
6. billon bonding wire according to claim 1, it is characterized in that：The trace additives contain 2-100ppm's
The Ca of Ga and 2-80ppm.
7. the manufacturing method of claim 1-6 any one of them billon bonding wires, it is characterised in that include the following steps：
（1）Founding：Pd, Ag, Pt and trace additives are added in golden raw material in proportion, connected by vacuum melting and orientation
It is continuous to draw casting process, obtain a diameter of 6-8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the bonding wire semi-finished product of a diameter of 0.08-0.5mm；
（3）To step（2）It obtains bonding wire semi-finished product and continues wire drawing, obtain the billon bonding of a diameter of 15-50 um
Silk；
Para-linkage silk semi-finished product carry out intermediate annealing several times in drawing process, and N is used in annealing process2As annealing gas
Atmosphere, annealing furnace effective length are 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30-100m/min；
（4）Finally anneal：Step（3）After the completion of wire drawing, is finally annealed to billon bonding wire, used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-800 DEG C, annealing rate 60-
120m/min；
（5）It is cooling：After finally annealing, billon bonding wire is cooled to 20-30 DEG C, obtains required billon bonding
Silk.
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|---|---|---|---|---|
| CN110117733A (en) * | 2019-04-30 | 2019-08-13 | 汕头市骏码凯撒有限公司 | A kind of electrum bonding wire and its manufacturing method |
| CN112342426A (en) * | 2020-11-10 | 2021-02-09 | 汕头市骏码凯撒有限公司 | Novel silver alloy bonding wire and manufacturing method thereof |
| CN112680618A (en) * | 2020-12-29 | 2021-04-20 | 南昌航空大学 | Preparation method of LED bonding alloy wire |
| CN114921678A (en) * | 2022-05-06 | 2022-08-19 | 紫金矿业集团黄金珠宝有限公司 | Ultrahigh-strength gold material, and preparation method and equipment thereof |
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