CN103155129A - High-strength, high-elongation-percentage gold alloy bonding wire - Google Patents
High-strength, high-elongation-percentage gold alloy bonding wire Download PDFInfo
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- CN103155129A CN103155129A CN2011800489953A CN201180048995A CN103155129A CN 103155129 A CN103155129 A CN 103155129A CN 2011800489953 A CN2011800489953 A CN 2011800489953A CN 201180048995 A CN201180048995 A CN 201180048995A CN 103155129 A CN103155129 A CN 103155129A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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Abstract
The purpose of the invention is to obtain a combination of a desired elongation percentage and breaking strength in a bonding wire comprising a gold alloy wire. At least one metal selected from copper (Cu), silver (Ag), palladium (Pd) and platinum (Pt) in an amount of 0.5-30 mass% is added to high-purity gold (Au), whereby a region ranging from 450 to 650 DEG C, in which the change in elongation percentage is flat, appears in a heat treatment temperature range for a wire drawing processing. In this temperature range, although the breaking strength of the wire is decreased, the strength of the wire is kept at a level corresponding to a heat treatment temperature at which the elongation percentage of 4%, which is a standard level for a high-purity gold wire, is achieved. Therefore, it becomes possible to produce an alloy wire having a certain level or higher of strength regardless of the change in temperature by performing the heating treatment at a temperature falling within in the flat region, and it also becomes possible to produce wires having different strengths for the above-mentioned elongation percentage by properly selecting the temperature region.
Description
Technical field
The present invention relates to be applicable to the Au alloy bond line that is connected between the outside lead of the electrode of the IC chip that is used for semiconductor device and substrate etc.Especially, described Au alloy bond line is used for hot conditions, as being used for car-mounted device and speeder.
Background technology
Traditionally, extensive use purity be the above Au lines of 99.99 quality %.This Au line is other metallic element that adds trace in high-purity Au, and it is being outstanding as the reliability on the Au line of the IC chip electrode that connects semiconductor device and outside lead.One end of these pure Au lines is by adopting ultrasonic wave hot pressing bonding method to be bonded to pure Al solder joint and Al alloy solder joint on the IC chip electrode, and the other end of these Au lines is bonded to the outside lead on substrate, becomes semiconductor device by method of resin-sealing afterwards.Usually these Al alloy solder joints are by formation such as vacuum evaporations, and normally Al-Cu alloy, Al-Si alloy and Al-Si-Cu alloy etc.
Yet, when resin-sealed semiconductor device is used for the vehicle-mounted IC of the high reliability request under the high temperature harsh conditions, and during the high frequency IC that uprises of operating temperature etc., can produce space, the crackle that is called as Kirkendall (Kirkendall), the corrosion that is perhaps caused by the halogenic ingredient in sealing resin is so it may cause the resistance at the bonded interface place between Al solder joint, Al alloy solder joint and pure Au line to increase and bond strength reduces.Therefore, than higher in the past, and used the closing line of Au-1 quality %Pd alloy for the requirement that guarantees high bonding reliability (resistance value and the bond strength that keep the ball bonding interface under certain environment).
This Au-Pb alloy wire can be suppressed under hot conditions in the Au at the interface of Al alloy solder joint and pure Au line is diffused into the Al solder joint by Pb, can relatively be suppressed at the interphase Au that the bonded interface place easily is subject to the impact of halogenic ingredient corrosion
4The formation of Al, so it has the deteriorated benefit that suppresses the bonding part between Al alloy solder joint place, Al alloy solder joint and Au alloy wire, the while, it also had the benefit that can not reduce bond strength.Although comparing with the pure Au of the 99.99 above purity of quality %, this Au-1 quality %Pd alloy wire has outstanding mechanical performance, high as the resistivity value of the closing line of electrical property.For example, the resistivity value of the pure Au line of 99.99 quality % purity is 2.3 μ Ω cm, and in contrast, the resistivity value of Au-l quality %Pd alloy is 3.0 μ Ω cm.So, as carrying out high-density applications, the equipment fault or the broken string that cause due to the line heating can appear, and in addition also can produce signal response speed the danger that postpones occurs.Along with bond wire diameter tapers to 15 μ m from 25 μ m, this trend is strengthened more.Although detailed mechanism is still unknown, in the situation that Au-1 quality %Pd alloy, because the existence of Pb has promoted to occur at bonded interface the promotion of unforeseeable Al oxidation.For example, because the Al oxide Al of volume more under aerial high temperature test
2O
3Generation, the Au closing line that may become than the 99.99 above purity of quality % with trace additives without the closing line of resin-sealed Au-1 quality %Pd alloy more is not durable.
Au and all proportions solid solution Ag alloying is before known in Japanese kokai publication sho 52-51867 communique and Japanese kokai publication sho 64-87734 communique etc. as the idea that closing line uses.Afterwards, consider and attempt being applied in the Au alloy that has added Trace Ag and add Ca and La, described Ca is known with La is the trace additives that the Au of the above purity of relative 99.99 quality % improves mechanical strength.This is a kind of semiconductor interface zygonema, and wherein fusion has 0.06-0.95 quality % and the Ag solid solution of Au full scale; And fusion has Ca, the Y of 0.001-0.005 quality % and more than one in rare earth element, and the purpose of described semiconductor interface zygonema is to reach and the resistivity of the pure Au line of about 99.99 quality % purity same resistivity value (referenced patent 1 of describing later) almost.This closing line is the Au alloy, wherein contains Ca, Y and more than one in rare earth element of Ag, the 0.0001-0.005 quality % of 0.05-0.95 quality %, and surplus is Au and inevitable impurity.The purpose of this closing line is to provide a kind of semiconductor Au alloy wire, and described Au alloy wire has high strength and excessively increases (referenced patent 1 the 10th section) in the situation that do not have bank distortion to suppress resistivity.
Yet former Au alloy bond line is followed the method almost identical with the method for the measurement of the engineering properties of Au closing line more than purity 99.99 quality %, and fracture strength is to measure under percentage elongation in the scope of 4-8%.
Estimate the elongation of closing line and the relation between stress by extension test.In measurement, until the maximum stress value in closing line when fracture is defined as hot strength (fracture strength), and the elongation of this moment is called tensile fracture elongation.As engineering properties, the larger hot strength of tensile fracture elongation is less, and generally there is opposite tendency in both.
When making hot strength become large, tensile fracture elongation reduces and the easily fracture that becomes.On the other hand, when making tensile elongation become large, the hot strength of closing line and lower hardness and be easy to produce and metal wire is out of shape.Therefore, consider from the aspect of these mechanical performances of balance, usually adopt about 4% elongation values (referenced patent 2).
Yet in the relation of heat treatment temperature and these mechanical performances, the tensile strength curve that reduces along with the rising of heat treatment temperature is intersected in this scope with the tensile elongation curve that increases along with the rising of heat treatment temperature.
In the situation that the high-purity Au closing line of the 99.99 above purity of quality %, because percentage elongation is originally just high, and show the gradient of extension at break curve and show that the gradient of the curve of fracture strength is mild at about 4% percentage elongation place, therefore even in the heat-treat condition that becomes about 4% percentage elongation, certain amplitude is arranged, it does not have large variation yet.
On the other hand, in the situation that add the Au alloy that constituent content is high, golden purity is lower, be generally high-intensity, fracture strength is high and percentage elongation is low.In order to reach balance, when increasing percentage elongation, reduce fracture strength by heat treatment in suitable scope, yet, when increasing percentage elongation by the raising heat treatment temperature, percentage elongation sharply rises near 4% and fracture strength sharply descends, and these two values of balance become very difficult.
These relation concepts ground is as Fig. 3 (A) of schematic diagram with (B).In figure, high-purity Au line is becoming near the heat treatment temperature of 4% percentage elongation, the inclination that shows the curve that percentage elongation and fracture strength change is mild, change with respect to heat treatment temperature and have wider tolerance, and the excursion of percentage elongation is very little (excursion of fracture strength is also very little) for the width of the heat-treatment temperature range in figure, and it is easy regulating fracture strength based on percentage elongation.
On the other hand, for having the alloy wire that strengthens element and improved intensity, the variation of percentage elongation and fracture strength relatively hot treatment temperature all has significantly variation, the inclination of curve all becomes greatly, therefore, and as shown in (B), width with respect to same heat treatment temperature variation, the width of elongation change (similarly, the width that fracture strength changes) is widened widely, and these values have occured to change greatly with respect to the minor variations of heat treatment temperature.
Therefore, imitate with the prior heat treatment of about 4% percentage elongation as so-called index, as for the balance between the percentage elongation that obtains these alloy wires and intensity, hardness, and corresponding these intensity arrange 5 percent to tens percent percentage elongation, in this heat-treatment temperature range, expression follows the elongation change of variations in temperature and the curve that line strength changes to intersect precipitously, and it is very difficult setting and keeping heat-treat condition, and the characteristic of resulting line is unsettled.
Therefore, can not obtain the closing line of constant performance, and this causes tilting and the broadness of bank height distributes.
On the other hand, when closing line attenuates, the bonding pitch becomes narrower and high density more, and multistage in a semiconductor device, when setting different length and connecting up, the deviation of the deviation of the second bonding and the bank height that caused by inclination becomes obviously in Au alloy bond line, and the bonding quality of the appreciable impact closing line that begins to become is good no.
Inclination is defined as, and when make line upright directly over ball in the ball bonding of solder joint side, in the slow semi-steep bank of lead-in wire forms, exists the line erection part may topple over the defective that touches adjacent line afterwards.Especially, closing line is thin in high-density applications, and the distance between line becomes narrow, therefore easily run-off the straight, and this becomes the principal element of the module production that reduces semiconductor device.
[referenced patent 1] TOHKEMY 2003-7757 communique
[referenced patent 2] TOHKEMY 2009-33127 communique
Summary of the invention
The problem to be solved in the present invention
The present invention completes in order to solve above technical problem.The objective of the invention is to use in the alloy gold, even some difference of composition of some width of heat treatment temperature and Au alloy bond line also provides the Au alloy bond line that the coil height deviation that is caused by inclination is little and have constant mechanical performance at closing line.
The mode of dealing with problems
The present inventor finds: follow heat treatment temperature to raise and mild zone having percentage elongation, and at least a element, the surplus that comprise among Cu, Ag, Pd and the Pt of 0.5-30 quality % are in the gold alloy bonding wire of Au, as utilize mild heat-treatment temperature range to carry out the heat treatment of closing line, can obtain the little closing line of coil height deviation that is caused by inclination.
In addition, even find that this line comprises at least a element in Be, Ca, rare earth element (Y, La, Ce, Eu, Gd, Nd and Sm), Si, Ge, Sn, In, Bi and the B that amounts to the 10-150ppm quality, the metal structure structure of line cross section does not almost change.
(a) first of the present invention is a kind of closing line for semiconductor device, wherein: described closing line has percentage elongation along with heat treatment temperature raises and mild zone, and described closing line comprises at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality %, and surplus is Au; And with the heat treatment in the scope of 450-650 ℃ in the mild zone of percentage elongation of described closing line.
(b) second point of the present invention is a kind of closing line for semiconductor device, wherein: described closing line has percentage elongation along with heat treatment temperature raises and mild zone, and described closing line comprises at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality %, and surplus is Au; And described closing line in the scope of 450-650 ℃ in the mild zone of percentage elongation after heat treatment, then is carried out water cooling.
Au alloy of the present invention comprises at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality %, and the Au of surplus.
As the element that contains in the Au alloy, Cu, Ag, Pd or Pt are Typical Representatives.
As is known, though in these elements Cu or Ag under a small amount of the interpolation also in Au fully solid solution form Au-Cu alloy or Au-Ag alloy.Au-Cu alloy or Au-Ag alloy have the heat-treatment temperature range in the mild zone wider than the Au alloy of Pb or Pt.This is considered to because atom Cu or Ag take a walk in the lattice of Au everywhere, and it depends on the formation of uniform Au-Cu alloy or Au-Ag alloy.
On the other hand, consider from actual use, for Pd preferably the scope of component be the Pd of 0.5-2 quality % and the Au of surplus.Based on same reason, for Pt preferably the scope of component be the Pt of 0.5-5 quality % and the Au of surplus.In addition, based on identical reason, for Ag preferably the scope of component be the Ag of 0.5-20 quality % and the Au of surplus.
For Au alloy of the present invention, when it comprised at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality %, this Au alloy had with heat treatment temperature and raises and mild zone.The mild zone of percentage elongation and percentage elongation are slightly different due to the difference of the amount of alloying element and kind and heat treatment temperature.The scope of 0.5-5 quality % for the preferred scope of Au-Cu alloy.The scope of 0.5-20 quality % for the preferred scope of Au-Ag alloy.This is because the heat-treatment temperature range in mild zone becomes wider in both cases.
On the other hand, the Au alloy of the purity more than 99.99 quality % does not have so mild zone; Percentage elongation rises along with the rising of heat treatment temperature, and when heat-treating when applying some tension, line finally cuts off.Incidentally, same with the Au alloy phase of the 99.99 above purity of quality %, the percentage elongation of above-mentioned Au alloy also rises along with the rising of heat treatment temperature, and when heat treatment temperature was too high, metal wire finally cut off.
For the Au alloy (5N) of the 99.99 above purity of quality % with add these characteristics of the Au alloy of Ag, Cu, Pd and Pt, with Au and the heat treatment temperature of Au alloy and the relation between percentage elongation of the composition of table 1, and the pass between heat treatment temperature and fracture strength ties up in Fig. 1 and Fig. 2 and provides.
In the situation that 5N high-purity Au closing line, as shown in fig. 1, percentage elongation is that near near 4% 350-400 ℃ of heat treatment temperature, the variation of percentage elongation demonstrates relatively mild trend.On the other hand, fasten the pass between the breaking load shown in Fig. 2 and heat treatment temperature, in the heat treatment temperature of same scope, shows in the same way mild trend.
On the contrary, from between the heat treatment temperature of each alloy of Au-16%Ag, Au-18%Ag, Au-1%Cu, Au-1.5%Pd and percentage elongation and the graph discovery of the relation between heat treatment temperature and breaking load, in the past in carrying out the temperature range of percentage elongation when becoming 5 percent to tens percent heat treatment, the variation of percentage elongation is risen very precipitously.On the other hand, breaking load sharply descends round about.Therefore, be very difficult in suitable scope with percentage elongation and strength control in this temperature range.
Yet, as to these alloys, further improving heat treatment temperature, the variation of percentage elongation is difference due to the difference of the composition of alloy, but become gently at 8-13% from about 450 ℃ of beginnings, and remains to more than 600 ℃ and even 650 ℃.
In addition, on the other hand, find out from the Fig. 2 that shows breaking load, breaking load reduces with the pure Au line of 5N the samely, because it has high strength originally, in the scope of the heat treatment temperatures of 450 ℃ to 650 ℃, it remains higher than the value at the breaking load of 4% percentage elongation of the pure Au line of 5N.
Above-mentioned cognition is obtained by the result that these interpolation elements are added to the strict checking of high-purity Au.Utilize these characteristics, namely under stable heat-treat condition, obtained the Au alloy wire corresponding to the intensity of above-mentioned percentage elongation in the heat-treatment temperature range of broadness.In addition, control heat treatment temperature and obtain the different alloy wire of intensity, and all obtain under, stable condition little in these characteristic variations.
These characteristics are added in the scope that element is Ag:5-20 quality %, Cu:0.5-30 quality %, Pd:0.5-2 quality %, Pt:0.5-5 quality % for every kind in the Ag that adds alloy wire to, Cu, Pd and Pt and are manifested.Balance between percentage elongation and intensity can be utilized with the corresponding above-mentioned characteristic of these Au alloy wires and determine, and can obtain the closing line corresponding to the different performance of required closing line.
The below is the heat-treat condition of Au alloy bond line of the present invention.
(heat treatment temperature)
The variation of the percentage elongation of Au alloy of the present invention becomes the initial temperature in mild zone generally the temperature range of 450-650 ℃ with respect to heat treatment temperature.Preferably, heat treatment of the present invention for the temperature that becomes mild from percentage elongation scope (below be referred to as " ST ") to the temperature of ST+200 ℃, more preferably from the temperature range of ST to ST+100 ℃.Because like this, grain size becomes more even.
(constant tension force)
Because percentage elongation mild the zone in heat treatment of the present invention complete between final bracing wire drawing-die and reel, constant tension force is applied on closing line.
(water cooling after heat treatment)
Quench after heat treatment, can prevent the alligatoring of closing line part crystallite dimension, even and in the situation that the closing line of several myriametres, the crystallite dimension more uniformly that also can obtain to carry throughout.
Water-quenching was preferably carried out before closing line faces coiling.Because closing line is reeled under constant tension force, closing line produces rigidity.So the wire diameter of closing line is thinner to 8-16 μ m, more shows heat treated quenching effect.
Technique effect of the present invention
As previously mentioned, closing line of the present invention becomes following structure with the Au alloy wire: the crystal grain at the larger particle diameter of the textural ratio of the crystalline structure of closing line particle diameter is so far arranged regularly, in addition, the engineering properties of closing line is than the similar alloy line is softer so far.Therefore, there is the closing line of the present invention's ground billon formation to compare with closing line so far, not inclination, bank height change.In addition, has the effect that the bond strength at the second bonding by supersonic bonding diminishes.Because Au alloy of the present invention has good bonding at the first bonding place and Al solder joint or Al alloy solder joint, so can keep the bonding reliability of closing line, but also can guarantee the bonding reliability of semiconductor device, and no matter the environment for use of described semiconductor device is high temperature or room temperature.
Description of drawings
The percentage elongation of [Fig. 1] high-purity Au line and Au alloy wire of the present invention is along with the variation of heat treatment temperature
The fracture strength (breaking load) of [Fig. 2] high purity alloys line and Au alloy wire of the present invention is along with the variation of heat treatment temperature
[Fig. 3] show high-purity Au alloy wire and comprise the heat treatment temperature of the alloy wire that strengthens element and percentage elongation, fracture strength between the schematic diagram of relation
Most preferred embodiment describes in detail
When the Au alloy of the present invention that will pull straight from drawing-die from final drawing-die when being wound to bobbin as for the heat treatment temperature of ST to ST+100 ℃, obtained most preferred embodiment of the present invention.Because closing line is thin, thus it can be quenched in air, but make stay in grade by water-quenching.Especially, in the situation that Au-20 quality %Ag alloy, Au-0.5 to 5 quality %Cu alloy and Au-0.8 to 1.2 quality %Pd alloy, tilting, obtaining stable bonding reliability in the variation of the bond strength of the variation of bank height (line apart from semiconductor chip is high, with under) and the second bonding.
For the Au alloy wire of the present invention shown in table 1, in order to confirm the characteristic as closing line, to comprise embodiment A u alloy melting and casting that the one-tenth of these scopes is grouped into, the closing line of the present invention of diameter that they are stretched as 20 μ m is with alloy gold wire (hereinafter referred to as line of the present invention) No1-27, and the closing line that does not fall into the comparative example in compositing range of the present invention is with alloy gold wire (below be referred to as comparative example) No28-36.
These line No1-27 of the present invention and alternative line No28-36 are placed in derive from Kulicke﹠amp; The lead bonding apparatus of Soffa company (trade mark: sMaxum plus), they are bonded to the 50 μ m that have Al-0.5 quality %Cu alloy to form that install on the semiconducter IC chip under the following conditions
2Al alloy solder joint on: heat treatment temperature: 200 ℃, bank length: 5mm, bank height: 220 μ m, the diameter of compressed ball: 54 μ m, and the height of compressed ball: 8 μ m.Afterwards, estimate the variation of bank height change and the second bond strength.
For each alloy compositions, measure the inclination of 1000 bondings and the variation of bank height.These results provide as the scoring item in the row of table 2 and table 3.
(evaluation method)
Wherein, inclination is, when pulling out bank to the second joint from the first key chalaza, the peak of the upper height apart from chip of bank short transverse (Z direction) is projected to the XY plane, measure on this point and XY plane by automatic three-dimension measuring system and be connected distance the shortest between the straight line of the first bonding and the second bonding, this distance is represented as parallax (tilt quantity).For the bank height, the peak of online arc-height direction (Z direction) when pulling out bank to the second bonding by the video camera measurement of following three-dimensional automatic measuring system from the first bonding.Afterwards, calculate the variation of each inclination and bank height, carry out the quantitative assessment by standard deviation.Incidentally, at the first bonding side at the bonding part 200 μ m places of distance the second bonding bond strength by pull strength test evaluation second bonding of the general bonding tester of use.
In the row of the scoring item in table 2 and table 3, the deviation of the tilt quantity of nauropemeter timberline, symbol ◎ means less than 5 μ m, zero to mean 5 μ m above and less than 8 μ m, it is above and less than 10 μ m that △ means 8 μ m, and * mean 10 μ m more than.
In the row of scoring item of table, the bank height represents the standard deviation value that changes, and symbol ◎ means less than 15 μ m, and zero to mean 15 μ m above and less than 20 μ m, and it is above and less than 30 μ m that △ means 20 μ m, and * mean 30 μ m more than.
In addition, in the row of the scoring item of showing, the bond strength of the second bonding represents the value of standard deviation, and symbol ◎ means to mean to mean more than 1.0 and less than 1.5 more than 0.8 and less than 1.0, △ less than 0.8, zero, and * mean more than 1.5.
Obvious from the result shown in table 2 and table 3, the feature of Au alloy wire of the present invention is to the elemental constituent that contains in scope of the present invention, heat-treat in elongation change mild zone, result, therefore line of the present invention is soft has a good mechanical performance, and it tilt, good on the bond strength of the variation of bank height and the second bonding.On the contrary, from outside scope of the present invention and the comparative example line No28-36 that does not have these characteristics know, at least one variation in its scoring item.
That is to say, because line of the present invention remains on percentage elongation on almost constant level in the scope of these heat treatment temperatures, utilize this condition, obtain irrespectively to have with variations in temperature the alloy wire of some strength, by selecting aptly temperature range, obtain intensity with respect to percentage elongation and the alloy wire of different performance.And, by the combination of a plurality of conditions, can obtain to have about tilting and the character of the almost stable that the deviation of the character of bank height is little.
By contrast, the change of the corresponding heat treatment temperature of comparative example percentage elongation and intensity and the change that produces is huge, be difficult to obtain constant character, and in order to improve mechanical performance and intensity, although add a large amount of interpolation elements, inclination and bank height are all also poor, and as a result of fail to keep the balance of percentage elongation and intensity.
The possibility of commercial Application
Closing line utilization of the present invention exists the percentage elongation zone mild with respect to the variation of heat treatment temperature can obtain to have the line of the fracture strength of expectation, in addition, by heat-treating, can obtain the line of these stable in properties in the scope in the mild zone of this elongation change of heat treatment temperature.Can make the line with the desired various character of closing line.This also can help to improve production capacity.
Claims (7)
1. closing line that is used for semiconductor device, wherein: described closing line is comprised of at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality % and the Au of surplus,
With the heat treatment in the scope of 450-650 ℃ that the percentage elongation increase of following heat treatment temperature to raise becomes mild of described closing line.
2. closing line that is used for semiconductor device, wherein: described closing line is comprised of at least a element in the Cu that adds up to 0.5-30 quality %, Ag, Pd and Pt and the Au of surplus, and described closing line is heat-treated in the scope of 450-650 ℃ that the percentage elongation increase of following heat treatment temperature to raise becomes mild.
3. claim 1 or the closing line for semiconductor device claimed in claim 2, wherein: described closing line is comprised of at least a element in Cu, Ag, Pd and the Pt of 0.5-30 quality % and the Au of surplus, and after the heat treatment in the scope of 450-650 ℃ that the percentage elongation increase of following heat treatment temperature to raise becomes mild, described closing line is quenched.
4. claim 1 or the closing line for semiconductor device claimed in claim 2, wherein: above-mentioned Au alloy is comprised of the Cu of 0.5-5 quality % and the Au of surplus.
5. claim 1 or the closing line for semiconductor device claimed in claim 2, wherein: above-mentioned Au alloy is comprised of the Ag of 0.5-20 quality % and the Au of surplus.
6. claim 1 or the closing line for semiconductor device claimed in claim 2, wherein: above-mentioned Au alloy is comprised of the Pb of 0.5-2 quality % and the Au of surplus.
7. claim 1 or the closing line for semiconductor device claimed in claim 2, wherein: above-mentioned heat treatment is carried out to the scope of ST+200 ℃ in the beginning temperature that becomes mild from percentage elongation, and wherein, ST represents the beginning temperature that percentage elongation becomes mild.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/063377 WO2012169067A1 (en) | 2011-06-10 | 2011-06-10 | High-strength, high-elongation-percentage gold alloy bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103155129A true CN103155129A (en) | 2013-06-12 |
Family
ID=47292124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011800489953A Pending CN103155129A (en) | 2011-06-10 | 2011-06-10 | High-strength, high-elongation-percentage gold alloy bonding wire |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120312428A1 (en) |
| KR (1) | KR20140033299A (en) |
| CN (1) | CN103155129A (en) |
| DE (1) | DE112011100491T5 (en) |
| SG (1) | SG186692A1 (en) |
| WO (1) | WO2012169067A1 (en) |
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| CN108588467A (en) * | 2018-06-02 | 2018-09-28 | 北京椿树电子材料有限公司 | A kind of auri yellow gold material |
| CN108796269A (en) * | 2018-06-30 | 2018-11-13 | 汕头市骏码凯撒有限公司 | Billon bonding wire and its manufacturing method |
| CN108922876A (en) * | 2018-06-27 | 2018-11-30 | 汕头市骏码凯撒有限公司 | A kind of billon bonding wire and its manufacturing method |
| CN111656501A (en) * | 2018-01-30 | 2020-09-11 | 拓自达电线株式会社 | Bonding wire |
| CN112981165A (en) * | 2021-02-06 | 2021-06-18 | 贵研铂业股份有限公司 | Gold-copper-gadolinium alloy used as light-load electric contact material, wire and preparation method thereof |
| CN113862504A (en) * | 2021-12-01 | 2021-12-31 | 北京达博有色金属焊料有限责任公司 | Gold alloy and alloy product and preparation method thereof |
| CN114207165A (en) * | 2019-09-26 | 2022-03-18 | 田中贵金属工业株式会社 | Medical Au-Pt-Pd alloy |
| CN116705745A (en) * | 2023-08-04 | 2023-09-05 | 烟台一诺电子材料有限公司 | Bond alloy wire and production process thereof |
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| JP2016536470A (en) * | 2013-09-10 | 2016-11-24 | アップル インコーポレイテッド | Crystalline gold alloy with improved hardness |
| CH714785B1 (en) * | 2018-03-15 | 2022-05-13 | Argor Heraeus Sa | Gold alloy resistant to discoloration and method of production of the same. |
| CN110117733A (en) * | 2019-04-30 | 2019-08-13 | 汕头市骏码凯撒有限公司 | A kind of electrum bonding wire and its manufacturing method |
| EP4245871A1 (en) * | 2022-03-18 | 2023-09-20 | Nivarox-FAR S.A. | Gold alloy |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212935A (en) * | 1988-06-30 | 1990-01-17 | Tanaka Electron Ind Co Ltd | Method and apparatus for takeup of bonding wiring for semiconductor |
| JPH04229631A (en) * | 1990-12-27 | 1992-08-19 | Sumitomo Metal Mining Co Ltd | Bonding wire |
| JPH10326803A (en) * | 1997-05-23 | 1998-12-08 | Nippon Steel Corp | Gold and silver alloy thin wire for semiconductor element |
| CN1793393A (en) * | 2004-12-21 | 2006-06-28 | 三菱综合材料株式会社 | Alloy gold wire for bonding, linear advance and resin-resistance good-fluid wire solder |
| JP2007027335A (en) * | 2005-07-14 | 2007-02-01 | Tanaka Electronics Ind Co Ltd | Manufacturing method of au extra-fine wire for ball bonding |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5251867A (en) | 1975-10-23 | 1977-04-26 | Nec Corp | Bonding wire for semiconductor device |
| JP2613224B2 (en) | 1987-09-29 | 1997-05-21 | 田中貴金属工業株式会社 | Gold fine wire material |
| JP2002057183A (en) * | 2000-08-09 | 2002-02-22 | Sumitomo Metal Mining Co Ltd | Bonding wire, its manufacturing method and method of storing the same |
| JP2003007757A (en) | 2001-06-18 | 2003-01-10 | Sumitomo Metal Mining Co Ltd | Gold alloy wire for bonding semiconductor element |
| JP4846137B2 (en) * | 2001-08-10 | 2011-12-28 | 株式会社日鉄マイクロメタル | Gold bonding wire heat treatment method and heat treatment apparatus |
| JP2004255464A (en) * | 2003-02-03 | 2004-09-16 | Nippon Steel Corp | Metal wire and method for manufacturing the same |
| JP5116101B2 (en) | 2007-06-28 | 2013-01-09 | 新日鉄住金マテリアルズ株式会社 | Bonding wire for semiconductor mounting and manufacturing method thereof |
-
2011
- 2011-06-10 WO PCT/JP2011/063377 patent/WO2012169067A1/en active Application Filing
- 2011-06-10 KR KR1020127008167A patent/KR20140033299A/en not_active Application Discontinuation
- 2011-06-10 US US13/499,977 patent/US20120312428A1/en not_active Abandoned
- 2011-06-10 CN CN2011800489953A patent/CN103155129A/en active Pending
- 2011-06-10 SG SG2012024006A patent/SG186692A1/en unknown
- 2011-06-10 DE DE112011100491T patent/DE112011100491T5/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212935A (en) * | 1988-06-30 | 1990-01-17 | Tanaka Electron Ind Co Ltd | Method and apparatus for takeup of bonding wiring for semiconductor |
| JPH04229631A (en) * | 1990-12-27 | 1992-08-19 | Sumitomo Metal Mining Co Ltd | Bonding wire |
| JPH10326803A (en) * | 1997-05-23 | 1998-12-08 | Nippon Steel Corp | Gold and silver alloy thin wire for semiconductor element |
| CN1793393A (en) * | 2004-12-21 | 2006-06-28 | 三菱综合材料株式会社 | Alloy gold wire for bonding, linear advance and resin-resistance good-fluid wire solder |
| JP2007027335A (en) * | 2005-07-14 | 2007-02-01 | Tanaka Electronics Ind Co Ltd | Manufacturing method of au extra-fine wire for ball bonding |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111656501A (en) * | 2018-01-30 | 2020-09-11 | 拓自达电线株式会社 | Bonding wire |
| TWI750449B (en) * | 2018-01-30 | 2021-12-21 | 日商拓自達電線股份有限公司 | Bonding wire |
| CN108588467A (en) * | 2018-06-02 | 2018-09-28 | 北京椿树电子材料有限公司 | A kind of auri yellow gold material |
| CN108922876A (en) * | 2018-06-27 | 2018-11-30 | 汕头市骏码凯撒有限公司 | A kind of billon bonding wire and its manufacturing method |
| CN108922876B (en) * | 2018-06-27 | 2020-05-29 | 汕头市骏码凯撒有限公司 | Gold alloy bonding wire and manufacturing method thereof |
| CN108796269A (en) * | 2018-06-30 | 2018-11-13 | 汕头市骏码凯撒有限公司 | Billon bonding wire and its manufacturing method |
| CN114207165A (en) * | 2019-09-26 | 2022-03-18 | 田中贵金属工业株式会社 | Medical Au-Pt-Pd alloy |
| CN112981165A (en) * | 2021-02-06 | 2021-06-18 | 贵研铂业股份有限公司 | Gold-copper-gadolinium alloy used as light-load electric contact material, wire and preparation method thereof |
| CN113862504A (en) * | 2021-12-01 | 2021-12-31 | 北京达博有色金属焊料有限责任公司 | Gold alloy and alloy product and preparation method thereof |
| CN116705745A (en) * | 2023-08-04 | 2023-09-05 | 烟台一诺电子材料有限公司 | Bond alloy wire and production process thereof |
| CN116705745B (en) * | 2023-08-04 | 2023-10-13 | 烟台一诺电子材料有限公司 | Bond alloy wire and production process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112011100491T5 (en) | 2013-06-13 |
| KR20140033299A (en) | 2014-03-18 |
| US20120312428A1 (en) | 2012-12-13 |
| WO2012169067A1 (en) | 2012-12-13 |
| SG186692A1 (en) | 2013-03-28 |
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Application publication date: 20130612 |