CN109411438A - A kind of copper alloy wire and its manufacturing method - Google Patents
A kind of copper alloy wire and its manufacturing method Download PDFInfo
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- CN109411438A CN109411438A CN201811146401.2A CN201811146401A CN109411438A CN 109411438 A CN109411438 A CN 109411438A CN 201811146401 A CN201811146401 A CN 201811146401A CN 109411438 A CN109411438 A CN 109411438A
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- 239000000654 additive Substances 0.000 claims abstract description 19
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims description 110
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 238000005491 wire drawing Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 5
- 239000008246 gaseous mixture Substances 0.000 claims description 5
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 230000003712 anti-aging effect Effects 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 30
- 229910052763 palladium Inorganic materials 0.000 description 15
- 238000012360 testing method Methods 0.000 description 14
- 239000011575 calcium Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 10
- 230000035939 shock Effects 0.000 description 7
- 230000032683 aging Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000004087 circulation Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 bare copper wire Chemical compound 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4896—Mechanical treatment, e.g. cutting, bending
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Wire Bonding (AREA)
Abstract
A kind of copper alloy wire contains Ag 0.1-3% by weight, and trace additives 460-1000ppm, surplus is copper；The trace additives are one of Ca, Be, In and Ge or in which two or more combinations.The present invention also provides a kind of manufacturing methods of above-mentioned copper alloy wire.Product is strong to the resistivity of humidity under high temperature, high humidity, high pressure conditions after copper alloy bonding wire of the invention has the advantages that (1) routing, and solder joint is good with pad adhesion；(2) there is excellent workability and reliability；(3) anti-aging property is good；(4) there is better suited wire rod hardness, significantly reduce the camber of routing；(5) when IC routing, a welding electrode is not caused to rupture and is damaged；(6) good zygosity can be provided；(7) cost is relatively low.
Description
Technical field
The present invention relates to the bonding wires of IC, LED encapsulation, and in particular to a kind of copper alloy wire and its manufacturing method.
Background technique
Bonding wire (bonding wire, also known as bonding line) be connection chip and outer enclosure substrate (substrate) and/
Or the main connection type of multilayer circuit board (PCB).The development trend of bonding wire, from the line of production, mainly line footpath is subtle
Change, high workshop service life (floor life) and high spool length；Chemically on ingredient, mainly have copper wire (including bare copper wire, plating
Palladium copper wire dodges gold plating palladium copper wire) significantly replace gold thread in semiconductor field, and silver wire and silver alloy wire are in LED and part
IC package applies upper substitution gold thread.Due to the demand for development of miniaturization of electronic products and thin thinning, semicon industry passes through chip
Thickness be thinned (Wafer thinning), encapsulation using chip stack (Die stacking), flip-chip (flip chip),
The methods of wafer-level packaging (wafer level packaging), 2.5D and 3D encapsulation are coped with, however traditional bonding packaging
(wire bonding) is still mainstream packing forms.
It is existing bonding wire as main component made mainly with copper to have pure copper wire and plating palladium gold-plated copper wires.Pure copper wire has good
Good workability and lower cost, but anti-aging property and the ability of high-temp resisting high-humidity resisting are poor, and reliability is lower.It is gold-plated to plate palladium
Copper wire includes that core wire, the palladium pre-plating layer being coated on outside core wire and the golden clad being coated on outside palladium pre-plating layer, core wire are adopted
It is made of fine copper；Palladium gold-plated copper wires are plated in order to guarantee good workability and reliability, need to coat the thicker palladium preplating of thickness
Layer and golden clad, cost of material is high, and manufacturing process is also complex, so that manufacturing cost is excessively high, lacks the market competitiveness.
Summary of the invention
Technical problem to be solved by the invention is to provide the manufacturing method of a kind of copper alloy wire and this copper alloy wire,
This copper alloy wire has excellent workability and reliability, and cost is relatively low.The technical solution adopted is as follows:
A kind of copper alloy wire, it is characterised in that contain Ag 0.1-3%, trace additives 460- by weight
1000ppm, surplus are copper；The trace additives are one of Ca, Be, work n and Ge or in which two or more combinations.
In a kind of preferred embodiment, the group of above-mentioned trace additives become Ca 150-300ppm, In 150-300ppm and
Ge 200-400ppm。
In another preferred embodiment, the group of above-mentioned trace additives becomes Be 150-300ppm, In 150-300ppm
With Ge 200-400ppm.
In another preferred embodiment, the group of above-mentioned trace additives becomes Ca 250-500ppm and Ge 250-
500ppm。
In another preferred embodiment, the group of above-mentioned trace additives becomes Ca 200-500ppm and Be 260-
500ppm。
In another preferred embodiment, the group of above-mentioned trace additives becomes Ca 250-600ppm and In 210-
400ppm。
It is preferred that the diameter of above-mentioned copper alloy wire is 15-40um.
The Ag (silver) of content 0.1-3% is added in copper alloy wire of the invention, the crystal grain refinement of copper alloy can be changed
The crystalline texture of wire rod, and then promote wire strength and ageing resistance；The trace additives of (460-1000ppm) are used in right amount
To improve the properties of wire rod, wherein Ca (calcium) can effectively promote the bonding wire workability of copper alloy, can enhance wire rod and chip
And the adhesion property of substrate, facilitate the sulfuration resistant ability and ageing resistance that promote wire rod, is promoted and trust performance；Be (beryllium) energy
The recrystallization temperature of copper alloy wire is improved, wire rod fatigue durability in a high temperauture environment is promoted, neck broken string is effectively reduced
Probability, it helps promote the sulfuration resistant ability and ageing resistance of wire rod；In (indium) has wettability effect, can increase by two welderings drawing
Power and a weldering pulling force, can effectively promote the bonding wire workability of copper alloy, can enhance the adhesion property of wire rod and chip and substrate, mention
It rises and trusts performance；Ge (germanium) helps to promote the oxidation resistance and sulfuration resistant ability of copper alloy wire, and improves the engagement of solder joint
Intensity.
The present invention also provides a kind of manufacturing methods of above-mentioned copper alloy wire, it is characterised in that includes the following steps:
(1) Ag and trace additives: being added in copper raw material by founding in proportion, continuous by vacuum melting and orientation
Draw casting process, obtains the wire rod that diameter is 6-8 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 50-280um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
N2Or nitrogen and hydrogen mixture comes as annealing atmosphere, annealing furnace effective length is 600-1000mm, annealing temperature 300-600
DEG C, annealing rate 60-120m/min；
(4) wire drawing is continued to the copper alloy wire through step (3) intermediate annealing process, obtaining diameter is 15-40um's
Copper alloy wire；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and N is used in annealing process2Or
Person's nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-700 DEG C, moves back
Rate is 60-120m/min at top speed；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 20-30 DEG C, obtains required copper alloy wire.
It is preferred that H of the nitrogen and hydrogen mixture that uses of above-mentioned steps (3) and step (5) by 5% (volume)2With 95% (volume)
N2Composition.
Copper alloy wire of the invention compared with prior art, has the advantages that
(1) product is strong to the resistivity of humidity under high temperature, high humidity, high pressure conditions after routing, and solder joint connects with pad
Put forth effort, (Pressure Cooker Test) is tested in pressure digester, without dead lamp (test condition: 2 times after seven circulations
Atmospheric pressure, recycles for 8 hours one by 121 DEG C)；
(2) there is excellent workability (CUP (Circuit Under Pad) electrode lower circuit will not be broken or puncture)
And reliability；
(3) anti-aging property is good, improves reliability of the encapsulating products in thermal shock test and (is amenable to 350 bouts or more
Thermal shock)；
(4) there is better suited wire rod hardness,
(5) when IC routing, a welding electrode is not caused to rupture and is damaged；
(6) good zygosity can be provided, effectively aqueous vapor is prevented to immerse interface, can improved under IC hot and humid environment
Ball lift (ball lift) problem；
(7) cost is relatively low, can reduce cost 20-30% relative to plating palladium gold-plated copper wires, and because do not have electroplating process, institute
It is extremely friendly to environment other than reducing cost, not pollute discharge.
In brief, copper alloy wire of the invention has excellent workability and reliability, and cost is relatively low.
Specific embodiment
Embodiment 1
The copper alloy wire of the present embodiment contains Ag 1.2%, Ca 200ppm, In 200ppm, Ge 300ppm by weight,
Surplus is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Ca, In and Ge: being added in copper raw material by founding in proportion, continuously draws casting by vacuum melting and orientation
Technique obtains the wire rod that diameter is 6 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 200um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 400 DEG C, annealing rate 60m/min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 650 DEG C, annealing rate 60m/min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 25 DEG C, obtains required copper alloy wire.
Embodiment 2
The copper alloy wire of the present embodiment contains Ag 0.1%, Be 300ppm, In 300ppm, Ge 400ppm by weight,
Surplus is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Be, In and Ge: being added in copper raw material by founding in proportion, continuously draws casting by vacuum melting and orientation
Technique obtains the wire rod that diameter is 6 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 180um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
Nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, and annealing rate is
100m/min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and nitrogen hydrogen is used in annealing process
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, annealing rate 100m/
min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 20 DEG C, obtains required copper alloy wire.
The nitrogen and hydrogen mixture that above-mentioned steps (3) and step (5) use by 5% (volume) H2With the N of 95% (volume)2Group
At.
Embodiment 3
The copper alloy wire of the present embodiment contains Ag 2.5% by weight, and Ca 400ppm, Ge 400ppm, surplus is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Ca and Ge: being added in copper raw material by founding in proportion, continuously draws foundry work by vacuum melting and orientation
Skill obtains the wire rod that diameter is 8 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 250um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 600 DEG C, annealing rate 80m/min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 650 DEG C, annealing rate 80m/min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 30 DEG C, obtains required copper alloy wire.
Embodiment 4
The copper alloy wire of the present embodiment contains Ag 0.3% by weight, and Ca 200ppm and Be 300ppm, surplus is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Ca and Be: being added in copper raw material by founding in proportion, continuously draws foundry work by vacuum melting and orientation
Skill obtains the wire rod that diameter is 8 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 200um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 450 DEG C, annealing rate 60m/min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, annealing rate 100m/min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 20 DEG C, obtains required copper alloy wire.
Embodiment 5
The copper alloy wire of the present embodiment contains Ag 0.8% by weight, and Ca 500ppm, In 400ppm, surplus is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Ca and In: being added in copper raw material by founding in proportion, continuously draws foundry work by vacuum melting and orientation
Skill obtains the wire rod that diameter is 6 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 50um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
Nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 1000mm, and annealing temperature is 550 DEG C, and annealing rate is
100m/min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and nitrogen hydrogen is used in annealing process
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 800mm, and annealing temperature is 650 DEG C, annealing rate 100m/
min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 30 DEG C, obtains required copper alloy wire.
The nitrogen and hydrogen mixture that above-mentioned steps (3) and step (5) use by 5% (volume) H2With the N of 95% (volume)2Group
At.
Embodiment 6
The copper alloy wire of the present embodiment contains Ag 3% by weight, Ca 150ppm, In 150ppm, Ge 300ppm, remaining
Amount is copper.
The manufacturing method of above-mentioned copper alloy wire includes the following steps:
(1) Ag, Ca, In and Ge: being added in copper raw material by founding in proportion, continuously draws casting by vacuum melting and orientation
Technique obtains the wire rod that diameter is 6 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 150um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, is used in annealing process
Nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 900mm, and annealing temperature is 600 DEG C, annealing rate 60m/
min；
(4) wire drawing continued to the copper alloy wire through step (3) intermediate annealing process, obtain diameter be 15-40um (such as
Copper alloy wire 18um)；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and nitrogen hydrogen is used in annealing process
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 600mm, and annealing temperature is 650 DEG C, annealing rate 60m/min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 30 DEG C, obtains required copper alloy wire.
The nitrogen and hydrogen mixture that above-mentioned steps (3) and step (5) use by 5% (volume) H2With the N of 95% (volume)2Group
At.
The copper alloy wire of 1-6 of the embodiment of the present invention is tested for the property, test method and test result is as follows:
1, anti-aging property
Embodiment 1-6 and pure copper wire, plating palladium gold-plated copper wires reliability difference mainly in thermal shock part.Specific aging
Experimental condition such as table 1.Test packing forms are the SMD2835 in LED encapsulation, and BSOB routing, packaging silicon rubber is using DOW CORNING
OE6650, packaged sample see whether to light after each thermal shock for completing 50 circulations.
Table 1
Experimental result (as shown in table 2): embodiment 1-6 copper alloy wire can be subjected to 350 bouts or more in senile experiment
Thermal shock, and pure copper wire can only be subjected to the thermal shock of 100 bouts in senile experiment, plate palladium gold-plated copper wires in senile experiment
It can only be subjected to the thermal shock of 150 bouts.
Table 2
| Sample sets | Aging rounds |
| Pure copper wire | 100 |
| Plate palladium gold-plated copper wires | 150 |
| The copper alloy wire of embodiment 1 | 350 |
| The copper alloy wire of embodiment 2 | 350 |
| The copper alloy wire of embodiment 3 | 350 |
| The copper alloy wire of embodiment 4 | 350 |
| The copper alloy wire of embodiment 5 | 350 |
| The copper alloy wire of embodiment 6 | 350 |
2, two weldering routing operation window
The routing ability of copper alloy wire is as follows；Embodiment 1-6 copper alloy wire routing parameter meets specification and routing operation window
Big (the bonding equipment: ASM iHawk Xtreme of mouth；Routing carries out under the protection of nitrogen hydrogen mixeding gas, routing power 50-
90unit, 40-140 grams of routing pressure)；And without obvious aluminium extruded, electrodeless damage when routing.
3, hardness test
Show to the hardness test result of the copper alloy wire of 1-6 of the embodiment of the present invention: copper alloy wire of the invention has lower
Wire rod hardness can beat lower wire rod camber between 55-70Hv.
4, FAB ball-type stability
A.EFO electric current: 40-60mA
B.N2+H2(gas flow: 0.3~0.8L/min)
The FAB ball of copper alloy wire of the invention, it is normal ball-type that stability is identical as plating palladium gold-plated copper wires, unbiased
Bulbus cordis and abnormal ball.
5, pressure digester test (Pressure Cooker Test)
Test condition: 2 times of atmospheric pressure, 121 DEG C；It recycles within 8 hours one.
Each 100, sample after plating palladium gold-plated copper wires and 1-6 copper alloy wire routing of the embodiment of the present invention, carry out autoclaving
Test, every completion one are tested after recycling.
Test result is as shown in table 3, finds after being tested: the sample after plating palladium gold-plated copper wires routing recycles i.e. through seven
There is dead lamp；Sample after the copper alloy wire routing of 1-6 of the embodiment of the present invention is after seven circulations without dead lamp.
Test result shows that the sample after 1-6 copper alloy wire routing of the embodiment of the present invention is right in the test of pressure digester
The resistivity of humidity is strong, and solder joint is good with pad adhesion.
Table 3
Note: denominator indicates that total number of samples, molecule indicate dead lamp sample number.
Claims (8)
1. a kind of copper alloy wire, it is characterised in that contain Ag 0.1-3%, trace additives 460-1000ppm by weight, it is remaining
Amount is copper；The trace additives are one of Ca, Be, In and Ge or in which two or more combinations.
2. copper alloy wire according to claim 1, it is characterized in that: the group of the trace additives becomes Ca 150-
300ppm, In 150-300ppm and Ge 200-400ppm.
3. copper alloy wire according to claim 1, it is characterized in that: the group of the trace additives becomes Be 150-
300ppm, In 150-300ppm and Ge 200-400ppm.
4. copper alloy wire according to claim 1, it is characterized in that: the group of the trace additives becomes Ca 250-
500ppm and Ge 250-500ppm.
5. copper alloy wire according to claim 1, it is characterized in that: the group of the trace additives becomes Ca 200-
500ppm and Be 260-500ppm.
6. copper alloy wire according to claim 1, it is characterized in that: the group of the trace additives becomes Ca 250-
600ppm and In 210-400ppm.
7. the manufacturing method of copper alloy wire described in any one of claims 1-6, it is characterised in that include the following steps:
(1) Ag and trace additives: being added in copper raw material by founding in proportion, continuously draws casting by vacuum melting and orientation
Technique obtains the wire rod that diameter is 6-8 millimeters；
(2) wire drawing: wire drawing is carried out to the wire rod that step (1) obtains, obtains the copper alloy wire that diameter is 50-280um；
(3) intermediate annealing: after the completion of step (2) wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Or
Person's nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, moves back
Rate is 60-120m/min at top speed；
(4) wire drawing is continued to the copper alloy wire through step (3) intermediate annealing process, obtains the copper that diameter is 15-40um and closes
Gold thread；
(5) finally anneal: the copper alloy wire obtained to step (4) is finally annealed, and N is used in annealing process2Or nitrogen hydrogen
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-700 DEG C, annealing rate
For 60-120m/min；
(6) cooling: after finally annealing, copper alloy wire to be cooled to 20-30 DEG C, obtains required copper alloy wire.
8. the manufacturing method of copper alloy wire according to claim 7, it is characterized in that: the nitrogen that step (3) and step (5) use
Hydrogen gaseous mixture by 5% (volume) H2With the N of 95% (volume)2Composition.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111101008A (en) * | 2019-12-26 | 2020-05-05 | 浙江杭机新型合金材料有限公司 | High-strength high-conductivity copper-silver alloy material and preparation method thereof |
| CN113699409A (en) * | 2021-09-24 | 2021-11-26 | 汕头市骏码凯撒有限公司 | Thick copper wire for semiconductor packaging and manufacturing method thereof |
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| CN103137235A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Secondary alloyed 1N copper wires for bonding in microelectronics devices |
| CN107799496A (en) * | 2017-09-01 | 2018-03-13 | 华南理工大学 | A kind of high reliability copper alloy bonding wire used for electronic packaging and preparation method thereof |
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| CN113699409A (en) * | 2021-09-24 | 2021-11-26 | 汕头市骏码凯撒有限公司 | Thick copper wire for semiconductor packaging and manufacturing method thereof |
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