CN113699409A - Thick copper wire for semiconductor packaging and manufacturing method thereof - Google Patents

Thick copper wire for semiconductor packaging and manufacturing method thereof Download PDF

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CN113699409A
CN113699409A CN202111010562.0A CN202111010562A CN113699409A CN 113699409 A CN113699409 A CN 113699409A CN 202111010562 A CN202111010562 A CN 202111010562A CN 113699409 A CN113699409 A CN 113699409A
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copper
wire
alloy
parts
diameter
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周博轩
周振基
于锋波
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Niche Tech Kaiser Shantou Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/001—Continuous casting of metals, i.e. casting in indefinite lengths of specific alloys
    • B22D11/004—Copper alloys
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/26—Methods of annealing
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/06—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of rods or wires
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C22C1/03—Making non-ferrous alloys by melting using master alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/10—Alloys based on copper with silicon as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods

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Abstract

A kind of thick copper wire used for semiconductor package, characterized by that to contain trace additive element 10-500ppm by weight, the surplus is copper; the trace additive element is one or the combination of more of Zn, Ca, P, Ag, Ni, Si and Sn. The invention also provides a manufacturing method of the copper wire for the semiconductor package. Compared with the existing thick aluminum wire and pure copper wire, the thick copper wire has the following beneficial effects: (1) the hardness is low, and the bonding performance of the welding wire is excellent; (2) the resistivity is low, and the conductivity is good; (3) the strength is high, the ductility is good, and the welding is stable; (4) the oxidation resistance is high, and the service life is longer; (5) the method has stable and reliable performance, can enhance the reliability of the bonding process, and can effectively improve the power cycle capability of the power module with high power density and high-efficiency heat dissipation by adopting the coarse copper wire bonding.

Description

Thick copper wire for semiconductor packaging and manufacturing method thereof
Technical Field
The invention relates to a lead for semiconductor packaging, in particular to a thick copper wire for semiconductor packaging and a manufacturing method thereof.
Background
The front electrodes of the chips inside the IGBT module (insulated gate bipolar transistor) are generally interconnected by adopting an ultrasonic wire bonding technology, and a coarse aluminum wire bonding mode is generally adopted at present.
The thermal property and the conductivity of the coarse aluminum wire are not ideal, and particularly, the mismatch between the thermal expansion coefficient of the coarse aluminum wire and a semiconductor chip is large, so that large thermal stress accumulation is easily generated after thermal cycle or power cycle, and the bonding wire is cracked or falls off, so that the module fails. Numerous tests have shown that with aluminum wire bonding, after many power cycles, cracks occur near the bond site interface (rather than at the interface) and cause failure.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a coarse copper wire for semiconductor packaging and a manufacturing method of the coarse copper wire, wherein the coarse copper wire has the advantages of low hardness and resistivity, high strength, good ductility, high oxidation resistance and stable and reliable performance. The technical scheme is as follows:
a kind of thick copper wire used for semiconductor package, characterized by that to contain trace additive element 10-500ppm by weight, the surplus is copper; the trace additive element is one or the combination of more of Zn, Ca, P, Ag, Ni, Si and Sn.
In the thick copper wire for semiconductor packaging, Zn (zinc) is beneficial to improving the oxidation resistance and the wire strength; ca (calcium) and P (phosphorus) are beneficial to improving the oxidation resistance, improving the stability of the crystal structure and enhancing the reliability; ag (silver) is beneficial to refining crystal grains, increasing the recrystallization temperature and maintaining the electrical property; ni (nickel) is beneficial to improving the corrosion resistance, and generates less Joule heat at high temperature; si (silicon) is beneficial to improving the process performance of the wire rod and improving the cutting capability of a welding spot; sn (tin) is beneficial to improving the softening temperature of the wire rod and improving the high-temperature reliability of the wire rod.
In a preferable embodiment, the composition of the trace additive element is Zn10-480ppm, Si 10-480ppm and Sn 10-480 ppm. Zn is beneficial to improving the oxidation resistance of the wire rod, and meanwhile, Zn can improve the strength of the wire rod and increase the tensile resistance of the wire rod; si contributes to increasing the cutting capability of the wire rod and improving the cutting capability of the welding wire; meanwhile, Sn can improve the recrystallization temperature of the wire rod, improve the high-temperature resistance of the wire rod and enhance the high-temperature reliability. Zn and Sn have good phase fusibility with copper, Si also has certain dissolubility in copper, and the three can not react each other and generate new phase structure simultaneously, can not weaken the performance for the comprehensive properties of wire rod can promote.
In another preferred embodiment, the trace additive elements comprise Ag 10-480ppm, Ni 10-480ppm and P10-480 ppm. Ag (silver) is beneficial to refining crystal grains, increasing the recrystallization temperature and maintaining the electrical property; ni (nickel) is beneficial to improving the corrosion resistance, and generates less Joule heat at high temperature; p (phosphorus) is beneficial to improving the oxidation resistance, the stability of the crystal structure and the reliability. Ag and Ni and copper have good phase fusibility, P also has certain dissolubility in copper, and the three can not react each other and generate new phase structure simultaneously, can not weaken the performance for the comprehensive properties of wire rod can promote.
In another preferred embodiment, the composition of the above-mentioned trace additive elements is Ni 10-480ppm, Zn10-480ppm and Ca 10-480 ppm. Ni (nickel) is beneficial to improving the corrosion resistance, and generates less Joule heat at high temperature; zn is beneficial to improving the oxidation resistance of the wire rod, and meanwhile, Zn can improve the strength of the wire rod and increase the tensile resistance of the wire rod; ca (calcium) is beneficial to improving the oxidation resistance, the stability of the crystal structure and the reliability. The Ni, the Zn and the Ca have good phase fusibility with the copper, and meanwhile, the Ni, the Zn and the Ca do not react with each other to generate a new phase structure, so that the performance is not weakened, and the comprehensive performance of the wire rod is improved.
The diameter of the thick copper wire for semiconductor packaging is preferably 100-500 um.
The invention also provides a manufacturing method of the copper wire for the semiconductor package, which is characterized by comprising the following steps:
(1) casting: adding trace elements into a copper raw material in proportion, and obtaining a copper alloy rod with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
(2) drawing: drawing the copper alloy bar obtained in the step (1) to obtain a copper alloy wire with the diameter of 0.8-2.0 mm;
(3) intermediate heat treatment: after the drawing in the step (2) is finished, carrying out intermediate heat treatment on the copper alloy wire, wherein the intermediate heat treatment adopts a vacuum heat treatment process, the temperature of the intermediate heat treatment is 300-600 ℃, and the time is 1-3 hours;
(4) continuously drawing the copper alloy wire subjected to the intermediate heat treatment in the step (3) to obtain the copper alloy wire with the diameter of 100-;
(5) and (3) final annealing: carrying out final annealing on the copper alloy wire obtained in the step (4), wherein the final annealing adopts a vacuum annealing process, the temperature of the final annealing is 250-600 ℃, and the heat preservation time is 0.5-3 hours; and after the final annealing is finished, cooling along with the furnace to obtain the required crude copper wire for semiconductor packaging.
In the step (1), Zn is added in the form of Cu-Zn intermediate alloy, Ca is added in the form of Cu-Ca intermediate alloy, P is added in the form of Cu-P intermediate alloy, Ag is added in the form of Cu-Ag intermediate alloy, Ni is added in the form of Cu-Ni intermediate alloy, Si is added in the form of Cu-Si intermediate alloy, Sn is added in the form of Cu-Sn intermediate alloy, and copper is added in the form of pure copper (the total amount of copper in the formula minus the amount of copper contained in each intermediate alloy is the added amount of pure copper), wherein the purity of the pure copper is 99.999-99.9999%.
The casting method of the Cu-Zn intermediate alloy can be as follows: adding 1-20 parts of Zn into 999-980 parts of copper raw materials by weight, and obtaining the rod-shaped Cu-Zn intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes.
The method for casting the Cu-Ca intermediate alloy comprises the following steps: adding 1-20 parts of Ca by weight into 999-980 parts of copper raw material, and obtaining the rod-shaped Cu-Ca intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting process.
The casting method of the Cu-P intermediate alloy can be as follows: adding 1-20 parts of P into 999-980 parts of copper raw material by weight, and obtaining the rod-shaped Cu-P intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting process.
The casting method of the Cu-Ag intermediate alloy can be as follows: adding 1-20 parts of Ag by weight into 999-980 parts of copper raw material, and obtaining the rod-shaped Cu-Ag intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting process.
The casting method of the Cu-Ni intermediate alloy can be as follows: adding 1-20 parts of Ni into 999-980 parts of copper raw materials by weight, and obtaining the rod-shaped Cu-Ni intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes.
The casting method of the Cu-Si intermediate alloy can be as follows: adding 1-20 parts of Si into 999-980 parts of copper raw material by weight, and obtaining the rod-shaped Cu-Si intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting process.
The melting and casting method of the Cu-Sn intermediate alloy can be as follows: adding 1-20 parts by weight of Sn into 999-980 parts by weight of copper raw material, and obtaining the rod-shaped Cu-Sn intermediate alloy with the diameter of 6-8 mm through vacuum melting and directional continuous casting process.
In the above various methods for casting the master alloy, the amounts of elements such as Zn, Ca, P, Ag, Ni, Si, and Sn may be adjusted as necessary, and the diameter of the rod-shaped master alloy may be adjusted as necessary.
Compared with the existing thick aluminum wire and pure copper wire, the thick copper wire has the following beneficial effects: (1) the hardness is low, and the bonding performance of the welding wire is excellent; (2) the resistivity is low, and the conductivity is good; (3) the strength is high, the ductility is good, and the welding is stable; (4) the oxidation resistance is high, and the service life is longer; (5) the method has stable and reliable performance, can enhance the reliability of the bonding process, and can effectively improve the power cycle capability of the power module with high power density and high-efficiency heat dissipation by adopting the coarse copper wire bonding.
Drawings
FIG. 1 is a graph of the apparent oxygen content of the open-sealed strands of the raw copper strands of examples 1-3 and the pure copper strands of the comparative examples;
FIG. 2 is a graph of the line surface oxygen content after baking of the raw copper wires of examples 1-3 and the pure copper wires of the comparative example.
Detailed Description
Example 1
The raw copper wire for semiconductor package of the present example contained 380ppm (of which, Zn 150ppm, Si 200ppm, Sn 30 ppm) of trace additive elements by weight, with the balance being copper.
The diameter of the thick copper wire for semiconductor package of the present embodiment is 500 um.
The manufacturing method of the thick copper wire for the semiconductor package comprises the following steps:
(1) casting: adding trace elements into a copper raw material in proportion, and obtaining a copper alloy rod with the diameter of 8 mm through vacuum melting and directional continuous casting processes;
(2) drawing: drawing the copper alloy bar obtained in the step (1) to obtain a copper alloy wire with the diameter of 0.8 mm;
(3) intermediate heat treatment: after the drawing in the step (2) is finished, carrying out intermediate heat treatment on the copper alloy wire, wherein the intermediate heat treatment adopts a vacuum heat treatment process, the temperature of the intermediate heat treatment is 500 ℃, and the time is 2 hours;
(4) continuously drawing the copper alloy wire subjected to the intermediate heat treatment in the step (3) to obtain the copper alloy wire with the diameter of 500 mu m;
(5) and (3) final annealing: carrying out final annealing on the copper alloy wire obtained in the step (4), wherein the final annealing adopts a vacuum annealing process, the temperature of the final annealing is 380 ℃, and the heat preservation time is 1 hour; and after the final annealing is finished, cooling along with the furnace to obtain the required crude copper wire for semiconductor packaging.
In the step (1), Zn is added in the form of Cu-Zn intermediate alloy, Si is added in the form of Cu-Si intermediate alloy, Sn is added in the form of Cu-Sn intermediate alloy, and copper is added in the form of pure copper (the total amount of copper in the formula is subtracted by the copper content of each intermediate alloy, namely the addition amount of the pure copper), and the purity of the pure copper is 99.9999%.
The casting method of the Cu-Zn intermediate alloy comprises the following steps: 2 parts of Zn is added into 998 parts of copper raw material by weight, and the rod-shaped Cu-Zn intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
The casting method of the Cu-Si intermediate alloy comprises the following steps: adding 2 parts of Si into 998 parts of copper raw material by weight, and obtaining the rod-shaped Cu-Si intermediate alloy with the diameter of 8 millimeters through vacuum melting and directional continuous casting processes.
The casting method of the Cu-Sn intermediate alloy comprises the following steps: adding 2 parts by weight of Sn into 998 parts by weight of copper raw material, and obtaining the rod-shaped Cu-Sn intermediate alloy with the diameter of 8 mm through vacuum melting and directional continuous casting processes.
Example 2
The raw copper wire for semiconductor package of the present example contained 110ppm (of Ag 50ppm, Ni 30ppm, P30 ppm) of trace additive elements by weight, with the balance being copper.
The diameter of the thick copper wire for semiconductor package of the present embodiment is 500 um.
The manufacturing method of the thick copper wire for the semiconductor package comprises the following steps:
(1) casting: adding trace elements into a copper raw material in proportion, and obtaining a copper alloy rod with the diameter of 6 mm through vacuum melting and directional continuous casting processes;
(2) drawing: drawing the copper alloy bar obtained in the step (1) to obtain a copper alloy wire with the diameter of 1.0 mm;
(3) intermediate heat treatment: after the drawing in the step (2) is finished, carrying out intermediate heat treatment on the copper alloy wire, wherein the intermediate heat treatment adopts a vacuum heat treatment process, the temperature of the intermediate heat treatment is 450 ℃, and the time is 1 hour;
(4) continuously drawing the copper alloy wire subjected to the intermediate heat treatment in the step (3) to obtain the copper alloy wire with the diameter of 500 mu m;
(5) and (3) final annealing: carrying out final annealing on the copper alloy wire obtained in the step (4), wherein the final annealing adopts a vacuum annealing process, the temperature of the final annealing is 425 ℃, and the heat preservation time is 1 hour; and after the final annealing is finished, cooling along with the furnace to obtain the required crude copper wire for semiconductor packaging.
In the step (1), Ag is added in the form of Cu-Ag intermediate alloy, Ni is added in the form of Cu-Ni intermediate alloy, P is added in the form of Cu-P intermediate alloy, and copper is added in the form of pure copper (the total amount of copper in the formula is subtracted by the copper content of each intermediate alloy, namely the addition amount of the pure copper), wherein the purity of the pure copper is 99.9999%.
The casting method of the Cu-Ag intermediate alloy comprises the following steps: 2 parts of Ag by weight is added into 998 parts of copper raw material, and the rod-shaped Cu-Ag intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
The casting method of the Cu-Ni intermediate alloy comprises the following steps: 2 parts of Ni is added into 998 parts of copper raw material by weight, and the rod-shaped Cu-Ni intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
The casting method of the Cu-P intermediate alloy can be as follows: 2 parts of P is added into 998 parts of copper raw material by weight, and the rod-shaped Cu-P intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
Example 3
The raw copper wire for semiconductor package of the present example contained 450ppm (of which Ni 50ppm, Zn 100ppm, Ca 300 ppm) of trace additive elements by weight, with the balance being copper.
The diameter of the thick copper wire for semiconductor package of the present embodiment is 500 um.
The manufacturing method of the thick copper wire for the semiconductor package comprises the following steps:
(1) casting: adding trace elements into a copper raw material in proportion, and obtaining a copper alloy rod with the diameter of 12 mm through vacuum melting and directional continuous casting processes;
(2) drawing: drawing the copper alloy bar obtained in the step (1) to obtain a copper alloy wire with the diameter of 1.5 mm;
(3) intermediate heat treatment: after the drawing in the step (2) is finished, carrying out intermediate heat treatment on the copper alloy wire, wherein the intermediate heat treatment adopts a vacuum heat treatment process, the temperature of the intermediate heat treatment is 500 ℃, and the time is 1.5 hours;
(4) continuously drawing the copper alloy wire subjected to the intermediate heat treatment in the step (3) to obtain the copper alloy wire with the diameter of 500 mu m;
(5) and (3) final annealing: carrying out final annealing on the copper alloy wire obtained in the step (4), wherein the final annealing adopts a vacuum annealing process, the temperature of the final annealing is 450 ℃, and the heat preservation time is 1.5 hours; and after the final annealing is finished, cooling along with the furnace to obtain the required crude copper wire for semiconductor packaging.
In the step (1), Ni is added in the form of Cu-Ni master alloy, Zn is added in the form of Cu-Zn master alloy, Ca is added in the form of Cu-Ca master alloy, and copper is added in the form of pure copper (the total amount of copper in the formula is subtracted by the copper content of each master alloy, namely the addition amount of the pure copper), wherein the purity of the pure copper is 99.999-99.9999%.
The casting method of the Cu-Ni intermediate alloy comprises the following steps: 2 parts of Ni is added into 998 parts of copper raw material by weight, and the rod-shaped Cu-Ni intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
The casting method of the Cu-Zn intermediate alloy comprises the following steps: 2 parts of Zn is added into 998 parts of copper raw material by weight, and the rod-shaped Cu-Zn intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
The casting method of the Cu-Ca intermediate alloy comprises the following steps: 2 parts of Ca by weight is added into 998 parts of copper raw material, and the rod-shaped Cu-Ca intermediate alloy with the diameter of 8 mm is obtained through vacuum melting and directional continuous casting process.
Comparative example 1
The pure copper wire is made of 6N pure copper and has the diameter of 500 um.
Comparative example 2
The pure aluminum wire is made of 6N pure aluminum and has the diameter of 500 um.
Examples of the experiments
The performance tests were performed on the coarse copper wires of examples 1 to 3 of the present invention, the pure copper wire of comparative example 1, and the pure aluminum wire of comparative example 2, and the test methods and test results were as follows:
comparison of physical Properties
Figure 237591DEST_PATH_IMAGE002
From the test results, the hardness of the rough copper wire is lower than that of the pure copper wire, the resistivity of the rough copper wire is lower than that of the pure copper wire and the pure aluminum wire, the thick copper wire has higher fusing current, and the breaking force and the elongation are higher than those of the pure copper wire and the pure aluminum wire.
Second, unseal Life comparison
The test conditions are as follows: the crude copper wires of examples 1 to 3 and the bare copper wires of comparative example 1 after being unpacked were placed in a constant temperature and humidity environment (temperature 20 to 25 ℃, humidity 45 to 55%) and subjected to 7/14/21 days, and then the oxygen content of the wires was measured. The test results are shown in fig. 1.
As can be seen from fig. 1, the wire surface oxygen content of the raw copper wires of examples 1 to 3 was significantly lower than that of the pure copper wires after being left for 7/14/21 days, meaning that the oxidation resistance of the raw copper wires of examples 1 to 3 was significantly higher than that of the pure copper wires at normal temperature.
Third, comparison of high temperature Oxidation resistance
The test conditions are as follows: the crude copper wires of examples 1 to 3 and the pure copper wires of comparative example 1 were placed in a muffle furnace and baked at a baking temperature of 250 ℃ for 0/30/60/90min, and then the surface oxygen content of the wires was measured. The test results are shown in fig. 2.
As can be seen from fig. 2, after 0/30/60/90min of baking, the wire surface oxygen content of the raw copper wires of examples 1-3 was significantly lower than that of the pure copper wires, meaning that the oxidation resistance of the raw copper wires of examples 1-3 at high temperature was significantly higher than that of the pure copper wires.
Fourth, wire bonding performance and reliability
1. Example 1 wire bonding performance for thick copper wire:
(1) the appearance of the welding spot is normal;
(2) no alarm abnormality exists in the verification process;
(3) the appearance of the wire arc is not abnormal.
2. And (3) reliability testing:
the test scheme is as follows: the 50 cut sections of the thick copper wire of example 1 were used as test samples and sent to a TC test (high and low temperature cycle test), and the TC temperature cycle test conditions were as follows: and (4) taking out test wire arc tension data after 100 rounds at 40 ℃/15 min-125 ℃/15min, and determining whether the tension value meets the requirement.
Figure DEST_PATH_IMAGE003
In the above table, LSL is the minimum required value of the tensile force of the copper wire, min is the minimum value of the tensile force of the 50-stage raw copper wire test sample after the TC test, ave is the average value of the tensile force of the 50-stage raw copper wire test sample after the TC test, max is the maximum value of the tensile force of the 50-stage raw copper wire test sample after the TC test, std is the variance, and CPK is the process capability index. The unit of tension is KG.
Summary of tensile testing after TC experiments:
(1) after the TC test, the average value of the tension of the blister copper wire is 7.051KG, the minimum value is 6.736KG, and the CPK value is 5.483 (which is far higher than 1.67 required by reaching the standard), so that the requirements are met.

Claims (8)

1. A kind of thick copper wire used for semiconductor package, characterized by that to contain trace additive element 10-500ppm by weight, the surplus is copper; the trace additive element is one or the combination of more of Zn, Ca, P, Ag, Ni, Si and Sn.
2. The blister copper wire for semiconductor packages according to claim 1, wherein: the composition of the trace additive elements is Zn10-480ppm, Si 10-480ppm and Sn 10-480 ppm.
3. The blister copper wire for semiconductor packages according to claim 1, wherein: the trace additive elements comprise 10-480ppm of Ag, 10-480ppm of Ni and 10-480ppm of P.
4. The blister copper wire for semiconductor packages according to claim 1, wherein: the composition of the trace additive elements is Ni 10-480ppm, Zn10-480ppm and Ca 10-480 ppm.
5. The blister copper wire for semiconductor packages according to claim 1, wherein: the diameter of the thick copper wire for semiconductor packaging is preferably 100-500 um.
6. The method for manufacturing a raw copper wire for a semiconductor package according to any one of claims 1 to 5, comprising the steps of:
(1) casting: adding trace elements into a copper raw material in proportion, and obtaining a copper alloy rod with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
(2) drawing: drawing the copper alloy bar obtained in the step (1) to obtain a copper alloy wire with the diameter of 0.8-2.0 mm;
(3) intermediate heat treatment: after the drawing in the step (2) is finished, carrying out intermediate heat treatment on the copper alloy wire, wherein the intermediate heat treatment adopts a vacuum heat treatment process, the temperature of the intermediate heat treatment is 300-600 ℃, and the time is 1-3 hours;
(4) continuously drawing the copper alloy wire subjected to the intermediate heat treatment in the step (3) to obtain the copper alloy wire with the diameter of 100-;
(5) and (3) final annealing: carrying out final annealing on the copper alloy wire obtained in the step (4), wherein the final annealing adopts a vacuum annealing process, the temperature of the final annealing is 250-600 ℃, and the heat preservation time is 0.5-3 hours; and after the final annealing is finished, cooling along with the furnace to obtain the required crude copper wire for semiconductor packaging.
7. The method for manufacturing a thick copper wire for a semiconductor package according to claim 6, wherein: in the step (1), Zn is added in the form of Cu-Zn master alloy, Ca is added in the form of Cu-Ca master alloy, P is added in the form of Cu-P master alloy, Ag is added in the form of Cu-Ag master alloy, Ni is added in the form of Cu-Ni master alloy, Si is added in the form of Cu-Si master alloy, Sn is added in the form of Cu-Sn master alloy, and copper is added in the form of pure copper.
8. The method of manufacturing a raw copper wire for a semiconductor package according to claim 7, wherein:
the casting method of the Cu-Zn intermediate alloy comprises the following steps: adding 1-20 parts of Zn into 999-980 parts of copper raw materials by weight, and obtaining a rod-shaped Cu-Zn intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-Ca intermediate alloy comprises the following steps: adding 1-20 parts of Ca by weight into 999-980 parts of copper raw material, and obtaining a rod-shaped Cu-Ca intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-P intermediate alloy comprises the following steps: adding 1-20 parts by weight of P into 999-980 parts by weight of copper raw material, and obtaining a rod-shaped Cu-P intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-Ag intermediate alloy comprises the following steps: adding 1-20 parts of Ag by weight into 999-980 parts of copper raw materials, and obtaining a rod-shaped Cu-Ag intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-Ni intermediate alloy comprises the following steps: adding 1-20 parts of Ni into 999-980 parts of copper raw materials by weight, and obtaining a rod-shaped Cu-Ni intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-Si intermediate alloy comprises the following steps: adding 1-20 parts by weight of Si into 999-980 parts by weight of copper raw material, and obtaining a rod-shaped Cu-Si intermediate alloy with the diameter of 6-12 mm through vacuum melting and directional continuous casting processes;
the casting method of the Cu-Sn intermediate alloy comprises the following steps: adding 1-20 parts by weight of Sn into 999-980 parts by weight of copper raw material, and obtaining the rod-shaped Cu-Sn intermediate alloy with the diameter of 6-8 mm through vacuum melting and directional continuous casting process.
CN202111010562.0A 2021-09-24 2021-09-24 Thick copper wire for semiconductor packaging and manufacturing method thereof Pending CN113699409A (en)

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