JPS63130739A - High strength and high conductivity copper alloy for semiconductor device lead material or conductive spring material - Google Patents
High strength and high conductivity copper alloy for semiconductor device lead material or conductive spring materialInfo
- Publication number
- JPS63130739A JPS63130739A JP27515286A JP27515286A JPS63130739A JP S63130739 A JPS63130739 A JP S63130739A JP 27515286 A JP27515286 A JP 27515286A JP 27515286 A JP27515286 A JP 27515286A JP S63130739 A JPS63130739 A JP S63130739A
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- JP
- Japan
- Prior art keywords
- copper alloy
- content
- semiconductor device
- properties
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 15
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 6
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 6
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 21
- 239000000956 alloy Substances 0.000 abstract description 21
- 238000007747 plating Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 150000003568 thioethers Chemical class 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔目 的〕
本発明は、トランジスタや集積回路(IC)などの半導
体機器のリード材、コネクター、端子、リレー、スイッ
チ等の導電性ばね材に適する銅合金に関するものである
。[Detailed Description of the Invention] [Object] The present invention relates to a copper alloy suitable for lead materials for semiconductor devices such as transistors and integrated circuits (ICs), and conductive spring materials for connectors, terminals, relays, switches, etc. be.
従来、半導体機器のリード材としては、熱膨張係数が低
く、素子及びセラミックとの接着及び封着性の良好なコ
バール(Fe−29Ni−16Co) 、42合金(F
e−42Ni)などの高ニッケル合金が好んで使われて
きた。しかし、近年、半導体回路の集積度の向上に伴い
消費電力の高いICが多くなってきたことと、封止材料
として樹脂が多く使用され、かつ素子とリードフレーム
の接着も改良が加えられたことにより、使用されるリー
ド材も放熱性のよい銅基合金が使われるようになってき
た。Conventionally, lead materials for semiconductor devices have been Kovar (Fe-29Ni-16Co) and 42 alloy (F
High nickel alloys such as e-42Ni) have been preferred. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, resins have been increasingly used as sealing materials, and improvements have been made to the bonding between elements and lead frames. As a result, copper-based alloys with good heat dissipation properties have come to be used as lead materials.
一般に半導体機器のリード材としては以下のような特性
が要求されている。Generally, lead materials for semiconductor devices are required to have the following properties.
(1)リードが電気信号伝達部であるとともに、パッケ
ージング工程中及び回路使用中に発生する熱を外部に放
出する機能を併せ持つことを要求される為、優れた熱及
び電気伝導性を示すもの。(1) Leads must exhibit excellent thermal and electrical conductivity, as they are required to act as an electrical signal transmission unit and also have the function of discharging heat generated during the packaging process and circuit use to the outside. .
(2)リードとモールドとの密着性が半導体素子保護の
観点から重要であるため、リード材とモールド材の熱膨
張係数が近いこと。(2) Since the adhesion between the lead and the mold is important from the viewpoint of protecting the semiconductor element, the thermal expansion coefficients of the lead material and the mold material should be similar.
(3)パッケージング時に種々の加熱工程が加わる為、
耐熱性が良好であること。(3) Since various heating processes are added during packaging,
Good heat resistance.
(4)リードはリード材を抜き打ち加工し、又曲げ加工
して作製されるものがほとんどである為、これらの加工
性が良好なこと。(4) Most leads are manufactured by punching or bending lead material, so the processability of these is good.
(5)リードは表面に貴金属のメッキを行う為、これら
貴金属とのメッキ密着性が良好であること。(5) Since the surface of the lead is plated with precious metals, the plating adhesion with these precious metals must be good.
(6)パッケージング後に封止材の外に露出している、
いわゆるアウター・リード部に半田付けするものが多い
ので良好な半田付は性を示すこと。(6) exposed outside the sealing material after packaging;
Many items are soldered to the so-called outer leads, so good soldering is a sign of good soldering.
(7)機器の信頼性及び寿命の観点から耐食性が良好な
こと。(7) Good corrosion resistance from the standpoint of equipment reliability and lifespan.
(8)価格が低廉であること。(8) The price must be low.
これら各種の要求特性に対し、従来から使用されている
合金は一長一短があり、満足すべきものは見い出されて
いない。Alloys conventionally used have advantages and disadvantages with respect to these various required characteristics, and no one has been found that satisfies these requirements.
又、従来、電気機器用ばね、計測器用ばね、スイッチ、
コネクター等に用いられるばね用材料としては、安価な
黄銅、優れたばね特性及び耐食性を有する洋白、あるい
は優れたばね特性を有するりん青銅が使用されていた。In addition, conventional springs for electrical equipment, springs for measuring instruments, switches,
As materials for springs used in connectors and the like, inexpensive brass, nickel silver, which has excellent spring properties and corrosion resistance, or phosphor bronze, which has excellent spring properties, have been used.
しかし、黄銅は強度、ばね特性が劣っており、又強度、
ばね特性の優れた洋白、りん青銅も洋白は18重量%の
Ni、りん青銅は8重量%のSnを含むため、原料の面
及び製造上熱間加工性が悪い等の加工上の制約も加わり
高価な合金であった。さらには電気機器用等に用いられ
る場合、電気伝導度が低いという欠点を有していた。従
って、導電性が良好であり、ばね特性に優れた安価な合
金の現出が待たれていた。However, brass has inferior strength and spring characteristics;
Nickel silver and phosphor bronze, both of which have excellent spring properties, contain 18% by weight of Ni and 8% by weight of Sn, so they have processing limitations such as poor hot workability in terms of raw materials and manufacturing. It was also an expensive alloy. Furthermore, when used for electrical equipment, etc., it has a drawback of low electrical conductivity. Therefore, the emergence of an inexpensive alloy with good electrical conductivity and excellent spring properties has been awaited.
本発明はかかる点に鑑みなされたもので、従来の銅基合
金のもつ欠点を改良し、半導体機器のリード材及び導電
性ばね材として好適な諸特性を有する銅合金を提供しよ
うとするものである。The present invention has been made in view of the above, and aims to improve the drawbacks of conventional copper-based alloys and provide a copper alloy that has various properties suitable for use as lead materials and conductive spring materials for semiconductor devices. be.
特にCu−Ni−8i系合金を改良し、要求に合致した
銅合金を提供しようとするものである。In particular, the aim is to improve the Cu-Ni-8i alloy and provide a copper alloy that meets the requirements.
すなわちCu−Ni−8i系合金は優れた導電性と強度
を示し、半導体機器リード材としても導電性ばね材とし
ても優れた銅合金といえるが、半田付は性、めっき性、
エツチング性、折り曲げ性については満足できる特性を
示さず、改良の必要があった。In other words, the Cu-Ni-8i alloy exhibits excellent conductivity and strength, and can be said to be an excellent copper alloy for both semiconductor device lead materials and conductive spring materials.
It did not show satisfactory properties in terms of etching and bending properties, and there was a need for improvement.
本発明者らは、これらの特性劣化要因を種々検討したと
ころ、Siの酸化物、硫化物がその原因であり、合金中
のo、Sの含有量をある一定値以下とすることによりこ
れら諸特性の改善をはかれることを見い出した。The present inventors investigated various causes of deterioration of these properties and found that Si oxides and sulfides were the cause, and by reducing the content of o and sulfur in the alloy to below a certain value, these factors could be suppressed. It was discovered that the characteristics could be improved.
本発明は、
(1)Ni0.4〜4.0wt%、Si0.1−1.0
wt%を含み、残部Cu及び不可避的不純物からなり、
該不純物のうち、Sの含有量が0゜0015wt%以下
であることを特徴とする半導体機器リード材又は導電性
ばね材用高力高導電性銅合金。The present invention includes: (1) Ni0.4-4.0wt%, Si0.1-1.0
wt%, the balance consists of Cu and unavoidable impurities,
A high-strength, high-conductivity copper alloy for semiconductor device lead material or conductive spring material, characterized in that the content of S among the impurities is 0°0015 wt% or less.
(2)Ni0.4〜4.0wt%、Si0.1−1.0
wt%を含み、さらに副成分として、Z0.P、S0.
As、Cr、Mg、M0.Sb、Fe。(2) Ni0.4-4.0wt%, Si0.1-1.0
wt%, and further contains Z0. P, S0.
As, Cr, Mg, M0. Sb, Fe.
Co、Al、Ti、Zr、Be、Ag、Pb、B。Co, Al, Ti, Zr, Be, Ag, Pb, B.
ランタノイド元素からなる1種又は2種以上を総量でO
,OO1〜3.0wt%含み、残部Cu及び不可避的不
純物からなり、該不純物のうち、Sの含有量がO,00
15wt%以下であることを特徴とする半導体機器リー
ド材又は導電性ばね用高力高導電鋼合金。The total amount of one or more lanthanide elements is O
,OO1 to 3.0wt%, and the balance consists of Cu and unavoidable impurities, and among the impurities, the content of S is O,00
A high-strength, high-conductivity steel alloy for use in semiconductor device lead materials or conductive springs, characterized in that the content is 15 wt% or less.
(3)Ni 0.4〜4.0wt%、5iO01〜1.
0wt%を含み、残部Cu及び不可避的不純物からなり
、該不純物のうち、Sの含有量が0゜0015 w t
%以下、Oの含有量が0.0020wt%以下であるこ
とを特徴とする半導体機器リード材又は導電性ばね材用
高力高導電性銅合金。(3) Ni 0.4-4.0wt%, 5iO01-1.
0 wt%, the balance consists of Cu and unavoidable impurities, and among the impurities, the content of S is 0°0015 w t
% or less, and the content of O is 0.0020 wt% or less.
(4)Ni0.4−4.0wt%、Si0.1−1.0
wt%を含み、さらに副成分として、Z0.P%Sn%
As、Cr、Mg%M0.Sb%Fe。(4) Ni0.4-4.0wt%, Si0.1-1.0
wt%, and further contains Z0. P%Sn%
As, Cr, Mg%M0. Sb%Fe.
Co、Al、Ti、Zr、Be、Ag、Pb、B、ラン
タノイド元素からなる1種又は2種以上を総量で0.0
01〜3.0wt%含み、残部Cu及び不可避的不純物
からなり、該不純物のうち、Sの含有量がO,0015
wt%以下、0の含有量が0.0020wt%以下であ
ることを特徴とする半導体機器リード材又は導電性ばね
用高力高導電性鋼合金。One or more of Co, Al, Ti, Zr, Be, Ag, Pb, B, and lanthanoid elements in a total amount of 0.0
01 to 3.0 wt%, with the balance consisting of Cu and unavoidable impurities, of which the content of S is O.0015
A high-strength, high-conductivity steel alloy for use in semiconductor device lead materials or conductive springs, characterized in that the content of zero is 0.0020 wt% or less.
であり、半導体機器リード材又は導電性ばね材として優
れた電気及び熱伝導性、耐熱性、ばね特性を有するばか
りでなく、半田付は性、めっき性、エツチング性、折り
曲げ性をも著しく改良したことを特徴とするものである
。It not only has excellent electrical and thermal conductivity, heat resistance, and spring properties as a semiconductor device lead material or conductive spring material, but also has significantly improved soldering properties, plating properties, etching properties, and bending properties. It is characterized by this.
次に本発明合金を構成する合金成分の限定理由を説明す
る。Next, the reason for limiting the alloy components constituting the alloy of the present invention will be explained.
NiはCu中にSiと共添し、溶体化処理後時効処理を
行うことにより、Ni2Si 等の金属間化合物として
析出し、導電率を低下させずに強度を向上させるためで
あるが、0.4〜4.0wt%添加する理由は、0.4
wt%未満では強度の向上は認められず、4.0wt%
を超えると導電性および加工性が劣化するためである。This is because Ni is co-added with Si in Cu and is precipitated as an intermetallic compound such as Ni2Si by performing aging treatment after solution treatment to improve strength without reducing conductivity. The reason for adding 4 to 4.0 wt% is 0.4
No improvement in strength was observed at less than 4.0 wt%.
This is because conductivity and workability will deteriorate if it exceeds this range.
Siも同様にNiと共添し、金属間化合物として析出す
ることにより、導電率を低下させずに強度を向上させる
元素であるが、0.1〜1.0wt%添加する理由は、
0.1wt%未満では強度の向上は認められず、1..
0wt%を超えると導電率が低下し、半田付は性、加工
性が劣化するためである。望ましくは、NiとSiの添
加量比は、金属間化合物(Ni2Si)の組成に近い(
Ni/5i)=(4/1)が良い。さらに副成分として
、Z0.P、S0.As%Cr%Mg、M0.Sb、F
e、Go%A1、Ti、Zr、Be、Ag%Pb%B、
ランタノイド元素からなる1種又は2種以上を0.00
1〜3.0wt%添加するのは、強度を向上させるため
であるが、O,001wt%未満ではその効果はなく、
3.0wt%を超えると導電性、加工性が劣化するため
である。Similarly, Si is an element that improves strength without reducing conductivity by co-adding with Ni and precipitating as an intermetallic compound, but the reason for adding 0.1 to 1.0 wt% is as follows.
If it is less than 0.1 wt%, no improvement in strength is observed, and 1. ..
This is because if it exceeds 0 wt%, the electrical conductivity decreases, and the soldering properties and workability deteriorate. Desirably, the addition amount ratio of Ni and Si is close to the composition of the intermetallic compound (Ni2Si) (
Ni/5i)=(4/1) is good. Furthermore, Z0. P, S0. As%Cr%Mg, M0. Sb,F
e, Go%A1, Ti, Zr, Be, Ag%Pb%B,
0.00 of one or more lanthanide elements
The reason for adding 1 to 3.0 wt% is to improve the strength, but if it is less than 0.001 wt%, there is no effect.
This is because if it exceeds 3.0 wt%, the conductivity and workability will deteriorate.
O含有量を0.0020重景%以下とする理由は、0が
存在するとSiと結合し酸化物となり、いわゆる介在物
となって鋼中に存在するようになるが、O含有量が0.
0020重量%を超えると介在物が多数生成され、折り
曲げ性、半田付は性、めっき性、エツチング性が著しく
低下するためである。The reason why the O content is set to be 0.0020% or less is that when O exists, it combines with Si to form oxides and becomes so-called inclusions that exist in steel.
This is because if the amount exceeds 0.20% by weight, a large number of inclusions will be formed, and the bending properties, soldering properties, plating properties, and etching properties will be significantly reduced.
S含有量を0.0015重量%以下とする理由は、Sが
存在すると、Siは非常にSと結合しやすく、容易に硫
化物になり鋼中に存在するようになるが、S含有量が0
.0015重量%を超えると硫化物が多数生成され、折
り曲げ性、半田付は性、めっき性、エツチング性が著し
く低下するためである。The reason why the S content is set to 0.0015% by weight or less is that when S exists, Si is very easy to combine with S, easily becoming a sulfide and existing in steel. 0
.. This is because if the amount exceeds 0.015% by weight, a large amount of sulfides will be produced, and the bending properties, soldering properties, plating properties, and etching properties will be significantly reduced.
この様に本発明合金はCu−Ni−5i系合金の不純物
としてのO,Sを限定することにより、今まで本合金の
欠点であった折り曲げ性、半田付は性、めっき性、エツ
チング性が著しく改善することができる。又、熱膨張係
数はプラスチックに近く、半導体機器のリード材として
はプラスチックパッケージ用に適している。従って、本
発明合金は半導体機器のリード材及び導電性ばね材とし
て好適な材料であり、先行技術の合金においてこのよう
な総合的特性を兼備するものはない。In this way, by limiting O and S as impurities in the Cu-Ni-5i alloy, the alloy of the present invention improves bendability, soldering properties, plating properties, and etching properties, which have been the drawbacks of this alloy. can be significantly improved. In addition, its coefficient of thermal expansion is close to that of plastic, making it suitable for plastic packages as a lead material for semiconductor devices. Therefore, the alloy of the present invention is suitable as a lead material and a conductive spring material for semiconductor devices, and no prior art alloy has such comprehensive properties.
以下に本発明材料を実施例をもって説明する。The material of the present invention will be explained below with reference to Examples.
第1表に示される本発明合金に係る各種成分組成のイン
ゴットを電気銅あるいは無酸素鋼を原料として、高周波
溶解炉で大気、不活性又は還元性雰囲気中で溶解鋳造し
た。電気銅を使用する場合は、還元性雰囲気中で溶解し
酸素含有量を低下させることが推奨される。Sについて
は本発明合金用としていS含有量0.0015重量%以
下の銅原料を用いた。Ingots having various compositions of the alloys of the present invention shown in Table 1 were melted and cast using electrolytic copper or oxygen-free steel as raw materials in a high-frequency melting furnace in air, an inert atmosphere, or a reducing atmosphere. If electrolytic copper is used, it is recommended to dissolve it in a reducing atmosphere to reduce the oxygen content. Regarding S, a copper raw material having an S content of 0.0015% by weight or less was used for the alloy of the present invention.
次に、これを900℃で熱間圧延して厚さ4mの板とし
た後、900℃×5分の溶体化処理を行い1固剤を行っ
て冷間圧延で厚さ0.3mmとした。Next, this was hot rolled at 900°C to form a 4m thick plate, then solution treated at 900°C for 5 minutes to give 1 solid and cold rolled to a thickness of 0.3mm. .
これを400℃にて2時間時効熱処理し、供試材とした
。リード材及びばね材としての評価項目として、強度、
伸びを引張試験により評価し、ばね性をKb値により評
価した。電気伝導性(放熱性)は導電率(%IAC8)
によって示した。折り曲げ性は曲げRo、3mmの折り
曲げ治具を用い、90°往復曲げを行い、破断までの回
数を測定した。This was subjected to aging heat treatment at 400° C. for 2 hours to obtain a test material. Strength,
Elongation was evaluated by a tensile test, and springiness was evaluated by Kb value. Electrical conductivity (heat dissipation) is electrical conductivity (%IAC8)
It was shown by The bendability was determined by bending Ro and using a 3 mm bending jig, performing 90° reciprocating bending, and measuring the number of times until breakage.
半田付は性は、垂直式浸漬法で230±5℃の半田浴(
すず60%、鉛40%)に5秒間浸漬し、半田のぬれの
状態を目視観察することにより評価した。メッキ密着性
は試料に厚さ3μのAgメッキを施し、450℃にて5
分間加熱し、表面に発生するフクレの有無を目視観察す
ることにより評価した。これらの結果を比較合金ととも
に第1表に示した。Soldering is done using the vertical immersion method in a solder bath at 230±5℃ (
The solder was immersed in a solution (60% tin, 40% lead) for 5 seconds, and the wetting state of the solder was visually observed. The plating adhesion was measured by applying Ag plating to a thickness of 3 μm to the sample and testing it at 450°C for 5
The sample was heated for a minute and evaluated by visually observing the presence or absence of blisters on the surface. These results are shown in Table 1 along with comparative alloys.
この表から本発明の合金は折り曲げ性、半田付は性、め
っき性が著しく改善されて、高力高導電銅合金として優
れた特性を有することが明らかである。From this table, it is clear that the alloy of the present invention has significantly improved bending properties, soldering properties, and plating properties, and has excellent properties as a high-strength, high-conductivity copper alloy.
以下余白Margin below
Claims (4)
wt%を含み、残部Cu及び不可避的不純物からなり、
該不純物のうち、Sの含有量が0.0015wt%以下
であることを特徴とする半導体機器リード材又は導電性
ばね材用高力高導電性銅合金。(1) Ni0.4-4.0wt%, Si0.1-1.0
wt%, the balance consists of Cu and unavoidable impurities,
A high-strength, highly conductive copper alloy for semiconductor device lead material or conductive spring material, characterized in that the content of S among the impurities is 0.0015 wt% or less.
wt%を含み、さらに副成分として、Zn、P、Sn、
As、Cr、Mg、Mn、Sb、Fe、Co、Al、T
i、Zr、Be、Ag、Pb、B、ランタノイド元素か
らなる1種又は2種以上を総量で0.001〜3.0w
t%含み、残部Cu及び不可避的不純物からなり、該不
純物のうち、Sの含有量が0.0015wt%以下であ
ることを特徴とする半導体機器リード材又は導電性ばね
用高力高導電銅合金。(2) Ni0.4-4.0wt%, Si0.1-1.0
wt%, and further contains Zn, P, Sn, as subcomponents.
As, Cr, Mg, Mn, Sb, Fe, Co, Al, T
i, Zr, Be, Ag, Pb, B, and one or more lanthanoid elements in a total amount of 0.001 to 3.0w
A high-strength, high-conductivity copper alloy for use in semiconductor device lead materials or conductive springs, characterized in that the balance is Cu and unavoidable impurities, and the content of S is 0.0015wt% or less among the impurities. .
wt%を含み、残部Cu及び不可避的不純物からなり、
該不純物のうち、Sの含有量が0.0015wt%以下
、Oの含有量が0.0020wt%以下であることを特
徴とする半導体機器リード材又は導電性ばね材用高力高
導電性銅合金。(3) Ni0.4-4.0wt%, Si0.1-1.0
wt%, the balance consists of Cu and unavoidable impurities,
A high-strength, highly conductive copper alloy for semiconductor device lead material or conductive spring material, characterized in that, among the impurities, the content of S is 0.0015 wt% or less and the content of O is 0.0020 wt% or less. .
wt%を含み、さらに副成分として、Zn、P、Sn、
As、Cr、Mg、Mn、Sb、Fe、Co、Al、T
i、Zr、Be、Ag、Pb、B、ランタノイド元素か
らなる1種又は2種以上を総量で0.001〜3.0w
t%含み、残部Cu及び不可避的不純物からなり、該不
純物のうち、Sの含有量が0.0015wt%以下、O
の含有量が0.0020wt%以下であることを特徴と
する半導体機器リード材又は導電性ばね用高力高導電性
銅合金。(4) Ni0.4-4.0wt%, Si0.1-1.0
wt%, and further contains Zn, P, Sn, as subcomponents.
As, Cr, Mg, Mn, Sb, Fe, Co, Al, T
i, Zr, Be, Ag, Pb, B, and one or more lanthanoid elements in a total amount of 0.001 to 3.0w
t%, the balance consists of Cu and unavoidable impurities, of which the content of S is 0.0015wt% or less, O
A high-strength, highly conductive copper alloy for use in semiconductor device lead materials or conductive springs, characterized in that the content thereof is 0.0020 wt% or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27515286A JPS63130739A (en) | 1986-11-20 | 1986-11-20 | High strength and high conductivity copper alloy for semiconductor device lead material or conductive spring material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27515286A JPS63130739A (en) | 1986-11-20 | 1986-11-20 | High strength and high conductivity copper alloy for semiconductor device lead material or conductive spring material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63130739A true JPS63130739A (en) | 1988-06-02 |
Family
ID=17551396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27515286A Pending JPS63130739A (en) | 1986-11-20 | 1986-11-20 | High strength and high conductivity copper alloy for semiconductor device lead material or conductive spring material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63130739A (en) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425929A (en) * | 1987-07-20 | 1989-01-27 | Furukawa Electric Co Ltd | Copper alloy for electronic equipment |
JPH01100231A (en) * | 1987-10-12 | 1989-04-18 | Furukawa Electric Co Ltd:The | Copper alloy for high tensile electric and electronic equipment |
JPH0247228A (en) * | 1988-08-05 | 1990-02-16 | Kobe Steel Ltd | Copper alloy for terminal and connector having excellent strength and conductivity |
JPH0266130A (en) * | 1988-08-29 | 1990-03-06 | Mitsubishi Shindoh Co Ltd | Cu alloy for terminal and connector having less wear or blanking die |
JPH02114404A (en) * | 1988-10-25 | 1990-04-26 | Sumitomo Electric Ind Ltd | Thin cu alloy wire for electric/electronic apparatus |
JPH02145737A (en) * | 1988-11-24 | 1990-06-05 | Dowa Mining Co Ltd | High strength and high conductivity copper-base alloy |
JPH02149626A (en) * | 1988-11-30 | 1990-06-08 | Kobe Steel Ltd | Copper alloy for terminal and connector having excellent strength, electrical conductivity and migration resistance |
JPH02282441A (en) * | 1989-04-22 | 1990-11-20 | Mitsubishi Electric Corp | Copper alloy for electronic equipment |
JPH0356636A (en) * | 1989-07-25 | 1991-03-12 | Mitsubishi Shindoh Co Ltd | Connector for electric apparatus made of cu alloy |
JPH03115538A (en) * | 1989-09-29 | 1991-05-16 | Tsuneaki Mikawa | Oxide dispersion strengthened special copper alloy |
JPH0559468A (en) * | 1991-04-24 | 1993-03-09 | Nikko Kyodo Co Ltd | Copper alloy for conductive spring |
US5248351A (en) * | 1988-04-12 | 1993-09-28 | Mitsubishi Denki Kabushiki Kaisha | Copper Ni-Si-P alloy for an electronic device |
JPH05345941A (en) * | 1992-06-11 | 1993-12-27 | Mitsubishi Shindoh Co Ltd | Lead frame material made of cu alloy for resin sealed semiconductor device |
US5833920A (en) * | 1996-02-20 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Copper alloy for electronic parts, lead-frame, semiconductor device and connector |
CN1040891C (en) * | 1992-11-04 | 1998-11-25 | 奥林公司 | Copper alloy having high strength and conductivity |
US6749699B2 (en) | 2000-08-09 | 2004-06-15 | Olin Corporation | Silver containing copper alloy |
US6893514B2 (en) | 2000-12-15 | 2005-05-17 | The Furukawa Electric Co., Ltd. | High-mechanical strength copper alloy |
US7090732B2 (en) | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
US7172662B2 (en) | 2000-07-25 | 2007-02-06 | The Furukawa Electric Co., Ltd. | Copper alloy material for parts of electronic and electric machinery and tools |
KR100885824B1 (en) | 2006-03-31 | 2009-02-26 | 닛코 킨조쿠 가부시키가이샤 | Copper alloy having superior hot workability and method for producing same |
US7648601B2 (en) | 2002-03-12 | 2010-01-19 | Furukawa Electric Co., Ltd. | High-strength, high-conductivity copper alloy wire excellent in resistance to stress relaxation |
US7727344B2 (en) | 2000-04-28 | 2010-06-01 | The Furukawa Electric Co., Ltd. | Copper alloy suitable for an IC lead pin for a pin grid array provided on a plastic substrate |
CN106011535A (en) * | 2016-07-19 | 2016-10-12 | 山东大学 | Rare earth oxide modified copper-nickel-silicon alloy material and preparation method and application thereof |
CN116732384A (en) * | 2023-08-08 | 2023-09-12 | 宁波兴业盛泰集团有限公司 | Copper nickel silicon alloy cast ingot and preparation method thereof |
-
1986
- 1986-11-20 JP JP27515286A patent/JPS63130739A/en active Pending
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425929A (en) * | 1987-07-20 | 1989-01-27 | Furukawa Electric Co Ltd | Copper alloy for electronic equipment |
JPH0425338B2 (en) * | 1987-07-20 | 1992-04-30 | Furukawa Electric Co Ltd | |
JPH0425340B2 (en) * | 1987-10-12 | 1992-04-30 | Furukawa Electric Co Ltd | |
JPH01100231A (en) * | 1987-10-12 | 1989-04-18 | Furukawa Electric Co Ltd:The | Copper alloy for high tensile electric and electronic equipment |
US5248351A (en) * | 1988-04-12 | 1993-09-28 | Mitsubishi Denki Kabushiki Kaisha | Copper Ni-Si-P alloy for an electronic device |
JPH0247228A (en) * | 1988-08-05 | 1990-02-16 | Kobe Steel Ltd | Copper alloy for terminal and connector having excellent strength and conductivity |
JPH0266130A (en) * | 1988-08-29 | 1990-03-06 | Mitsubishi Shindoh Co Ltd | Cu alloy for terminal and connector having less wear or blanking die |
JPH0524217B2 (en) * | 1988-08-29 | 1993-04-07 | Mitsubishi Shindo Kk | |
JPH02114404A (en) * | 1988-10-25 | 1990-04-26 | Sumitomo Electric Ind Ltd | Thin cu alloy wire for electric/electronic apparatus |
JPH02145737A (en) * | 1988-11-24 | 1990-06-05 | Dowa Mining Co Ltd | High strength and high conductivity copper-base alloy |
JPH0478704B2 (en) * | 1988-11-24 | 1992-12-11 | Dowa Kogyo Kk | |
JPH0472898B2 (en) * | 1988-11-30 | 1992-11-19 | Kobe Steel Ltd | |
JPH02149626A (en) * | 1988-11-30 | 1990-06-08 | Kobe Steel Ltd | Copper alloy for terminal and connector having excellent strength, electrical conductivity and migration resistance |
JPH02282441A (en) * | 1989-04-22 | 1990-11-20 | Mitsubishi Electric Corp | Copper alloy for electronic equipment |
JPH0356636A (en) * | 1989-07-25 | 1991-03-12 | Mitsubishi Shindoh Co Ltd | Connector for electric apparatus made of cu alloy |
JPH03115538A (en) * | 1989-09-29 | 1991-05-16 | Tsuneaki Mikawa | Oxide dispersion strengthened special copper alloy |
JPH0530894B2 (en) * | 1989-09-29 | 1993-05-11 | Tsuneaki Mikawa | |
JPH0559468A (en) * | 1991-04-24 | 1993-03-09 | Nikko Kyodo Co Ltd | Copper alloy for conductive spring |
JPH05345941A (en) * | 1992-06-11 | 1993-12-27 | Mitsubishi Shindoh Co Ltd | Lead frame material made of cu alloy for resin sealed semiconductor device |
CN1040891C (en) * | 1992-11-04 | 1998-11-25 | 奥林公司 | Copper alloy having high strength and conductivity |
US5833920A (en) * | 1996-02-20 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Copper alloy for electronic parts, lead-frame, semiconductor device and connector |
US7727344B2 (en) | 2000-04-28 | 2010-06-01 | The Furukawa Electric Co., Ltd. | Copper alloy suitable for an IC lead pin for a pin grid array provided on a plastic substrate |
US7172662B2 (en) | 2000-07-25 | 2007-02-06 | The Furukawa Electric Co., Ltd. | Copper alloy material for parts of electronic and electric machinery and tools |
US6749699B2 (en) | 2000-08-09 | 2004-06-15 | Olin Corporation | Silver containing copper alloy |
US7090732B2 (en) | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
US6893514B2 (en) | 2000-12-15 | 2005-05-17 | The Furukawa Electric Co., Ltd. | High-mechanical strength copper alloy |
US7648601B2 (en) | 2002-03-12 | 2010-01-19 | Furukawa Electric Co., Ltd. | High-strength, high-conductivity copper alloy wire excellent in resistance to stress relaxation |
KR100885824B1 (en) | 2006-03-31 | 2009-02-26 | 닛코 킨조쿠 가부시키가이샤 | Copper alloy having superior hot workability and method for producing same |
CN106011535A (en) * | 2016-07-19 | 2016-10-12 | 山东大学 | Rare earth oxide modified copper-nickel-silicon alloy material and preparation method and application thereof |
CN116732384A (en) * | 2023-08-08 | 2023-09-12 | 宁波兴业盛泰集团有限公司 | Copper nickel silicon alloy cast ingot and preparation method thereof |
CN116732384B (en) * | 2023-08-08 | 2023-11-21 | 宁波兴业盛泰集团有限公司 | Copper nickel silicon alloy cast ingot and preparation method thereof |
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