CN107665874A - A kind of compound bonding wire of billon and its manufacture method for coating gold - Google Patents

A kind of compound bonding wire of billon and its manufacture method for coating gold Download PDF

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Publication number
CN107665874A
CN107665874A CN201710801216.1A CN201710801216A CN107665874A CN 107665874 A CN107665874 A CN 107665874A CN 201710801216 A CN201710801216 A CN 201710801216A CN 107665874 A CN107665874 A CN 107665874A
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bonding wire
wire
gold
billon
cored wire
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周振基
周博轩
于锋波
彭政展
麦宏全
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Shantou Junma Kaisa Coltd
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Shantou Junma Kaisa Coltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]

Abstract

A kind of compound bonding wire of billon for coating gold, including cored wire and the clad that is coated on outside cored wire;The cored wire contains Pd 0.2 5%, Ag 25 49%, the ppm of trace additives 2 200 by weight, and surplus is gold;The trace additives are combinations more than one kind or two of which in Ca, In, Co, Be, Ga, Mg, Ce, Ni, Pt, Cu and Al;The clad is the layer gold that purity is more than 99%, and the thickness of clad is 20 200nm.The present invention also provides a kind of manufacture method of the compound bonding wire of billon of above-mentioned cladding gold.The compound bonding wire of billon of the present invention has the advantages that:(1)With excellent antioxygenic property and sulfuration resistant performance, tensile strength is high, and solder joint zygosity is good, and reliability is high;(2)HAZ with 53 60 um scopes, significantly reduce the camber of routing;(3)After FAB burns ball, it is moderate to obtain number(Long axialite number is between 6 10 in terms of FAB sections)Symmetrical column crystal, it is ensured that the out of roundness of shape-changeable ball;(4)Cost is relatively low.

Description

A kind of compound bonding wire of billon and its manufacture method for coating gold
Technical field
The present invention relates to the bonding wire of IC, LED encapsulation, and in particular to it is a kind of coat gold the compound bonding wire of billon and Its manufacture method.
Background technology
Bonding wire(Bonding wire, also known as bonding line)It is connection chip and outer enclosure substrate(substrate)With/ Or multilayer circuit board(PCB)Main connected mode.The development trend of bonding wire, from the line of production, mainly line footpath is trickle Change, the high workshop life-span(floor life)And high bobbin length;Chemically on composition, mainly there is copper cash(Including bare copper wire, plating Palladium copper cash, dodge gold plating palladium copper cash)Significantly substitute gold thread in semiconductor applications, and silver wire and silver alloy wire are in LED and part IC package applies upper substitution gold thread.Another important directions is the development of alloy gold wire, further to reduce cost and protect Hold or improve the performance requirements of bonding process.
Due to miniaturization of electronic products and the demand for development of thin thinning, (Wafer is thinned by chip thickness in semicon industry Thinning), encapsulation is using chip stack (Die stacking), flip-chip (flip chip), wafer-level packaging(wafer level packaging), 2.5D and 3D the methods of encapsulating tackle, but traditional bonding packaging(wire bonding)Still It is so main flow packing forms.
Traditional gold bonding silk made of proof gold material, it possesses excellent chemical stability and electrical and thermal conductivity performance, Thus it is widely used as IC leads.But with rising steadily for international price of gold, the price also rising all the way of gold bonding silk, lead Cause the cost of end product too high, be unfavorable for enterprise and improve competitiveness.In addition, the tensile strength of gold bonding silk is relatively low(Example Such as 20 microns of gold bonding silk of diameter, after welding, its maximum pulling strength is less than 5 gram forces), elongation percentage is not easily controlled.With Upper two aspects factor, which turns into, hinders gold bonding silk using the bottleneck with development.
To reduce cost, various bonding wires are continued to bring out out, such as Silver alloy wire, golden alloy wire and plating electrum bonding Silk etc., its price is relatively low, can also meet the different demands of different clients;But for high-end LED, the engagement to product Property and reliability require higher, conventional silver alloy and plating gold-silver alloy wire are because of the oxidation of silver, it may appear that bonding oxidation, silver from The defects of sub- current potential migrates, solder joint eutectic is bad, the requirement of client is not reached in terms of reliability yet.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of compound bonding wire of billon for coating gold and this gold The manufacture method of the compound bonding wire of alloy, this compound bonding wire of billon have excellent antioxygenic property and sulfuration resistant Can, tensile strength is high, and solder joint zygosity is good, and can reduce cost.The technical scheme of use is as follows:
A kind of compound bonding wire of billon for coating gold, it is characterised in that including cored wire and the clad being coated on outside cored wire; The cored wire is gold by weight containing Pd 0.2-5%, Ag 25-49%, trace additives 2-200 ppm, surplus;It is described micro- Amount addition element is combination more than one kind or two of which in Ca, In, Co, Be, Ga, Mg, Ce, Ni, Pt, Cu and Al;Institute It is the layer gold that purity is more than 99% to state clad, and the thickness of clad is 20-200nm.
Control of element of the invention by cored wire, lift the tensile strength of wire rod;Simultaneously cored wire Surface coating proof gold, The problem of billon solder joint associativity can be improved, the oxidation resistance and sulfuration resistant ability of wire rod are also lifted, so as to obtain solder joint The compound bonding wire of billon that zygosity is good, anti-oxidant sulfuration resistant ability is strong, tensile strength is high.Relative to proof gold bonding wire Speech, the compound bonding wire of billon of the invention are used in IC, LED encapsulation, can reduce cost and improve gold line tensile strength not The problem of sufficient, and other performances can reach the performance requirement of proof gold bonding wire.
In the compound bonding wire of billon of the present invention, in cored wire except for gold, the also silver containing 25-49%, silver and gold It can fully be dissolved, play a part of solution strengthening, improve the tensile strength of wire rod, but because silver itself is easily aoxidized and vulcanized, Can cause wire rod in terms of the workability and reliability in terms of all Shortcomings, therefore add content 0.2-5% palladium on this basis (Pd), can effectively improve the anti-oxidant and sulfuration resistant performance of wire rod, and it is reliable in thermal shock test to improve encapsulating products Property.For appropriate trace additives to improve the mechanical performance of wire rod, wherein Ca, In, Ga, Mg, Ce, Ni can effectively lift gold The bonding wire workability of alloy, can strengthen the adhesion property of wire rod and chip and substrate, and performance is trusted in lifting;Co、Be、Pt、Cu、Al Etc. the recrystallization temperature that can improve billon wire rod, the fatigue durability of lifting wire rod in high temperature environments, effectively reduce neck and break The probability of line.Importantly, in cored wire Surface coating layer gold, can effectively play the characteristic of gold, further function as it is anti-oxidant and Sulfuration resistant acts on;It is additionally, since wire surface and is coated with layer gold, can effectively lifts wire rod and chip and the joint capacity of substrate, Effectively lifting reliability.
Above-mentioned cladding composition of layer is typically that purity is 99%(2N)-99.99%(4N)Gold.
In a kind of preferred scheme, above-mentioned trace additives contain 10-100ppm Ca, 2-50ppm Mg and 2-50ppm Ce.In another preferred scheme, above-mentioned trace additives contain 10-80ppm Ca, 2-50ppm In's and 2-50ppm Be.In another preferred scheme, above-mentioned trace additives contain 2-50ppm Pt, 2-100ppm Cu's and 10-50ppm Ca.In another preferred scheme, above-mentioned trace additives contain 2-80ppm Ni, 10-100ppm Ca's and 2-20ppm Co.In another preferred scheme, above-mentioned trace additives contain 2-50ppm Ga, 2-60ppm Al and 2-80ppm Ca. Using the combination of any of the above trace additives, the recrystallization temperature of wire rod can be effectively lifted, improves the institutional framework of wire rod, Lift wire rod fatigue durability in high temperature environments, effectively reduce the probability of neck broken string, and can strengthen wire rod and chip and Performance is trusted in the adhesion property of substrate, lifting.
The present invention also provides a kind of manufacture method of the compound bonding wire of billon of above-mentioned cladding gold, it is characterised in that including Following step:
(1)Founding:Ag, Pd and trace additives are added in golden raw material in proportion, it is continuous by vacuum melting and orientation Draw casting process, obtain the core wires of a diameter of 6-8 millimeters;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 50-280um(Micron)Bonding wire Cored wire;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 150-500nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 15-40 um (Micron)The compound bonding wire of billon, and the thickness of gold plate is decreased to 20-200nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, annealing rate For 60-120m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 20-30 DEG C, obtains required cladding gold The compound bonding wire of billon.
In above-mentioned manufacture method, Gold plated Layer is coated when wire drawing is to line footpath 50-280um, afterwards again wire drawing to line footpath 15-40 Um, it can effectively control the uniformity of coating thickness on the compound bonding wire of finished product billon;In addition, in line footpath 50-280um pair Bonding wire cored wire is electroplated, and efficiency is higher, and cost is relatively low, wire surface in order, therefore prepared finished product billon The clad uniformity of compound bonding wire is good, and bonding wire workability and reliability are all more preferably.
It is preferred that above-mentioned steps(2)In drawing process, intermediate annealing several times is carried out to wire rod, used in annealing process N2As annealing atmosphere, annealing furnace effective length is 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30- 100m/min。
It is preferred that above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition immerses the acetone ethanol that temperature is 70-150 DEG C In mixed liquor, the immersion time is the 1.4-8 seconds, the organic matter on removing bonding wire cored wire surface;Third in the acetone ethanol mixed liquor The part by weight of ketone and ethanol is 1:5-10;
(3-2)Remove oxide process:It it is 70-150 DEG C, again by the bonding wire cored wire immersion temperature by removing organic matter processing Measure in the nitric acid that percent concentration is 30-50%, the immersion time is the 1.4-8 seconds, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 70-150 DEG C, weight that bonding wire cored wire by removing oxide process is immersed into temperature Percent concentration is in 10-30% sulfuric acid, and the immersion time is the 1.4-8 seconds, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 2-4g/L, electroplated Electric current is gold-plated under conditions of being 0.2-0.8A, and the gold plate that thickness is 150-500nm is formed on the surface of bonding wire cored wire, should Gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:The water being attached on gold plate surface is blown away using air knife;
When being electroplated, with the continuous release steps of 5-30m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire according to It is secondary to be handled, after removing oxide process, surface activation process, gold-plated, cleaning and drying by above-mentioned removing organic matter, wrapped It is covered with the bonding wire cored wire of gold plate and take-up.
It is preferred that above-mentioned steps(3-4)In, the gold plating liquid of use is potassium auricyanide solution.
It is preferred that above-mentioned steps(3-5)In, using pure water as cleaning fluid, two are carried out to the bonding wire cored wire for being coated with gold plate Road ultrasonic cleaning.
It is preferred that above-mentioned steps(3-6)In, air knife air-flow is N2, its flow velocity is 5-20L/min.
The compound bonding wire of billon of the present invention compared with prior art, has the advantages that:
(1)Possesses the billon cored wire of special elementses combination by gold plate cladding, the compound bonding wire of billon of formation has Excellent antioxygenic property and sulfuration resistant performance, tensile strength is high, and solder joint zygosity is good, and reliability is high;
(2)The compound bonding wire of billon that the present invention obtains has the HAZ of 53-60 um scopes, significantly reduces the arc of routing It is high;
(3)It is moderate to obtain number after FAB burns ball for the compound bonding wire of billon that the present invention obtains(The long axialite in terms of FAB sections Number is between 6-10)Symmetrical column crystal, it is ensured that the out of roundness of shape-changeable ball;
(4)Cost is relatively low.
Embodiment
Embodiment 1
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 1.0%, Ag 30%, Ca 100ppm, Mg 80 ppm, Ce 5 ppm by weight, and surplus is gold;The cladding Layer is the layer gold that purity is more than 99%, and the thickness of clad is 40nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Ca, Mg and Ce are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation Technique, obtain a diameter of 8 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 100um(Micron)Bonding wire core Line;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 1000mm, and annealing temperature is 600 DEG C, annealing rate 50m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 200nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 20 um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 40nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 500 DEG C, annealing rate 80m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 25 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition, which immerses the acetone ethanol that temperature is 110 DEG C, to be mixed Close in liquid, it is 3 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;Acetone and second in the acetone ethanol mixed liquor The part by weight of alcohol is 1:8;
(3-2)Remove oxide process:It is 110 DEG C, weight that bonding wire cored wire by removing organic matter processing is immersed into temperature Percent concentration is in 40% nitric acid, and it is 3 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 110 DEG C, weight hundred that bonding wire cored wire by removing oxide process is immersed into temperature Divide in the sulfuric acid that specific concentration is 20%, it is 3 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 3g/L(The plating of use Golden liquid is potassium auricyanide solution), it is gold-plated under conditions of electroplating current is 0.5A, form thickness on the surface of bonding wire cored wire For 200nm gold plate, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 10L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 20m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
Embodiment 2
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 2.5%, Ag 40% by weight, and the ppm of Ca 10ppm, Be 5, In 30ppm, surplus is gold;The clad It is the layer gold that purity is more than 99%, the thickness of clad is 75nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Ca, Be and In are added in golden raw material in proportion, continuously drawn by vacuum melting and orientation Casting process, obtain a diameter of 6 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 80um(Micron)Bonding wire cored wire;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 600mm, and annealing temperature is 500 DEG C, annealing rate 30m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 400nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 15um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 75nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 1000mm, and annealing temperature is 600 DEG C, annealing rate 120m/ min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 30 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition, which immerses the acetone ethanol that temperature is 150 DEG C, to be mixed Close in liquid, it is 1.5 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;In the acetone ethanol mixed liquor acetone with The part by weight of ethanol is 1:5;
(3-2)Remove oxide process:It is 150 DEG C, weight that bonding wire cored wire by removing organic matter processing is immersed into temperature Percent concentration is in 50% nitric acid, and it is 1.5 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 150 DEG C, weight hundred that bonding wire cored wire by removing oxide process is immersed into temperature Divide in the sulfuric acid that specific concentration is 30%, it is 1.5 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 4g/L(The plating of use Golden liquid is potassium auricyanide solution.), it is gold-plated under conditions of electroplating current is 0.2A, formed on the surface of bonding wire cored wire thick The gold plate for 400nm is spent, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 20L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 30m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
Embodiment 3
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 4.5%, Ag 45%, Ca 70ppm, Ni 5 ppm, Co 20 ppm by weight, and surplus is gold;The clad It is the layer gold that purity is more than 99%, the thickness of clad is 80nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Ca, Ni and Co are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation Technique, obtain a diameter of 8 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 250um(Micron)Bonding wire core Line;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 2000mm, and annealing temperature is 500 DEG C, annealing rate 100m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 500nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 40 um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 80nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 600mm, and annealing temperature is 400 DEG C, annealing rate 60m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 20 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition immerses the acetone ethanol that temperature is 70 DEG C and mixed In liquid, it is 8 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;Acetone and ethanol in the acetone ethanol mixed liquor Part by weight be 1: 10;
(3-2)Remove oxide process:It is 70 DEG C, weight hundred that bonding wire cored wire by removing organic matter processing is immersed into temperature Divide in the nitric acid that specific concentration is 30%, it is 8 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 70 DEG C, weight percent that bonding wire cored wire by removing oxide process is immersed into temperature Specific concentration is in 10% sulfuric acid, and it is 8 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 2g/L(The plating of use Golden liquid is potassium auricyanide solution), it is gold-plated under conditions of electroplating current is 0.8A, form thickness on the surface of bonding wire cored wire For 500nm gold plate, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 5L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 5m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
Embodiment 4
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 0.2%, Ag 49%, Pt 20ppm, Cu 90ppm, Ca 30ppm by weight, and surplus is gold;The clad It is the layer gold that purity is more than 99%, the thickness of clad is 150nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Pt, Cu and Ca are added in golden raw material in proportion, continuously draw casting by vacuum melting and orientation Technique, obtain a diameter of 7 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 50um(Micron)Bonding wire cored wire;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 1200mm, and annealing temperature is 600 DEG C, annealing rate 60m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 500nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 15 um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 150nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 500 DEG C, annealing rate 100m/ min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 25 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition, which immerses the acetone ethanol that temperature is 120 DEG C, to be mixed Close in liquid, it is 4 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;Acetone and second in the acetone ethanol mixed liquor The part by weight of alcohol is 1:9;
(3-2)Remove oxide process:It is 120 DEG C, weight that bonding wire cored wire by removing organic matter processing is immersed into temperature Percent concentration is in 30% nitric acid, and it is 4 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 120 DEG C, weight hundred that bonding wire cored wire by removing oxide process is immersed into temperature Divide in the sulfuric acid that specific concentration is 25%, it is 4 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 2.5g/L(Use Gold plating liquid is potassium auricyanide solution), it is gold-plated under conditions of electroplating current is 0.5A, formed on the surface of bonding wire cored wire thick The gold plate for 500nm is spent, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 15L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 10m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
Embodiment 5
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 3.5%, Ag 35%, Ga 10ppm, Al 40ppm, Ca 50ppm by weight, and surplus is gold;The clad It is the layer gold that purity is more than 99%, the thickness of clad is 30nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Ga, Al and Ca are added in golden raw material in proportion, continuously drawn by vacuum melting and orientation Casting process, obtain a diameter of 8 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 200um(Micron)Bonding wire core Line;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 1500mm, and annealing temperature is 700 DEG C, annealing rate 90m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 150nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 40 um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 30nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 400 DEG C, annealing rate 90m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 20 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition immerses the acetone ethanol that temperature is 80 DEG C and mixed In liquid, it is 6 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;Acetone and ethanol in the acetone ethanol mixed liquor Part by weight be 1:6;
(3-2)Remove oxide process:It is 80 DEG C, weight hundred that bonding wire cored wire by removing organic matter processing is immersed into temperature Divide in the nitric acid that specific concentration is 30%, it is 6 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 80 DEG C, weight percent that bonding wire cored wire by removing oxide process is immersed into temperature Specific concentration is in 15% sulfuric acid, and it is 6 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 3.5g/L(Use Gold plating liquid is potassium auricyanide solution), it is gold-plated under conditions of electroplating current is 0.6A, formed on the surface of bonding wire cored wire thick The gold plate for 150nm is spent, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 15L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 20m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
Embodiment 6
The compound bonding wire of billon of the cladding gold of the present embodiment includes cored wire and the clad being coated on outside cored wire;The core Line contains Pd 4%, the ppm of Ag 25%, Ga 50 ppm, Al 50 by weight, and surplus is gold;The clad is that purity is 99% Layer gold above, the thickness of clad is 60nm.
In the present embodiment, the manufacture method for coating the compound bonding wire of billon of gold comprises the steps:
(1)Founding:Ag, Pd, Ga and Al are added in golden raw material in proportion, continuously draw foundry work by vacuum melting and orientation Skill, obtain a diameter of 6 millimeters of core wires;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 150um(Micron)Bonding wire core Line;
This step(2)In, in drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As Annealing atmosphere, annealing furnace effective length are 800mm, and annealing temperature is 700 DEG C, annealing rate 50m/min;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 300nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 30 um(It is micro- Rice)The compound bonding wire of billon, and the thickness of gold plate is decreased to 60nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 700mm, and annealing temperature is 400 DEG C, annealing rate 70m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 30 DEG C, obtains the gold of required cladding gold The compound bonding wire of alloy.
Above-mentioned steps(3)In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition, which immerses the acetone ethanol that temperature is 100 DEG C, to be mixed Close in liquid, it is 4 seconds to immerse the time, the organic matter on removing bonding wire cored wire surface;Acetone and second in the acetone ethanol mixed liquor The part by weight of alcohol is 1:6;
(3-2)Remove oxide process:It is 100 DEG C, weight that bonding wire cored wire by removing organic matter processing is immersed into temperature Percent concentration is in 35% nitric acid, and it is 4 seconds to immerse the time, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 100 DEG C, weight hundred that bonding wire cored wire by removing oxide process is immersed into temperature Divide in the sulfuric acid that specific concentration is 25%, it is 4 seconds to immerse the time, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 2g/L(The plating of use Golden liquid is potassium auricyanide solution), it is gold-plated under conditions of electroplating current is 0.8A, form thickness on the surface of bonding wire cored wire For 300nm gold plate, the gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, twice ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:Utilize air knife(Air knife air-flow is N2, its flow velocity is 8L/min)Blow away and be attached on gold plate surface Water;
When being electroplated, with the continuous release steps of 20m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire is successively After the processing of above-mentioned removing organic matter, removing oxide process, surface activation process, gold-plated, cleaning and drying, coated There are the bonding wire cored wire of gold plate and take-up.
The compound bonding wire progressive of billon of the cladding gold obtained to above example 1-6 can be tested(Comparative example uses market The conventional 80%Au alloy gold wires of upper purchase).
1st, the method for testing of HAZ length
Embodiment 1-6 and the wire rod of comparative example are subjected to the cutting of FIB (Focused Ion beam) focused ion beam, utilize SEM (scanning electron microscopy) ESEM is observed, and passes through the crystal size of more different wire positions Change, HAZ length information can be obtained.
2nd, ageing testing method
Obtained by embodiment 1-6 and comparative example wire rod in the difference of reliability mainly in thermal shock part.Specific degradation bar Part such as table 1.Experiment packing forms are the SMD2835 in LED encapsulation, and BSOB routings, packaging silicon rubber uses DOW CORNING OE6650, For packaged sample after each thermal shock for completing 50 circulations, seeing whether can also be electric bright, records the number for the dead lamp that fails.
Table 1
Measuring Try Strip parts Time length (Hour)/bouts (Cycle)
The warm area standard circumfluence of 305 alloy 8 welds (265 DEG C) 1
- 40 DEG C of * 30min-100 DEG C * 30min (conversion time is less than 20 seconds) 50/100/…/500
3rd, method of testing is vulcanized
The good sample lamp bead of embedding is positioned in closed container(Distil certain sulphur concentration), 85 DEG C of constant temperature;The timing of vulcanization one Between after take out test light decay.
The performance test results are as shown in table 2.
Table 2
Note:Shape-changeable ball out of roundness number of non-compliances is the summation of the bad alternating compression ball of out of roundness and eccentric sphere.
Above-mentioned the performance test results show:
1st, wire rods of the HAZ that the compound bonding wire of billon of 1-6 of embodiment of the present invention cladding gold obtains well below comparative example.
2nd, the routing performance of the compound bonding wire of billon of 1-6 of embodiment of the present invention cladding gold(Shape-changeable ball out of roundness)It is bright It is aobvious to be better than comparative example.
The excellent routing performance of wire rod of the present invention, which is primarily due to the wire rod, to ensure stable burning ball performance(Including FAB property placed in the middle is to prevent the suitable column crystal of symmetrical and number generated in eccentric sphere and FAB).
3rd, the compound bonding wire of billon of 1-6 of embodiment of the present invention cladding gold obtains very relative to comparative example, reliability Big lifting.
After thermal shock of the compound bonding wire of billon of 1-6 of embodiment of the present invention cladding gold by 450 circulations, do not have still Lose lamp situation of being ready to give one's life for a cause(Wherein after thermal shock of the embodiment 4,6 by 500 circulations, still without the dead lamp situation that fails);It is and right Then has there is the dead lamp that fails in ratio(Comparative example can only be subjected to the thermal shock of 400 circulations).This explanation the technology of the present invention wire rod Reliability it is higher.
4th, vulcanize
The compound bonding wire of billon of 1-6 of embodiment of the present invention cladding gold is tested by vulcanization, and light decay is below 20%;It is and right Ratio light decay is 25%.The sulfuration resistant ability of this explanation the technology of the present invention wire rod is stronger.

Claims (10)

1. a kind of compound bonding wire of billon for coating gold, it is characterised in that including cored wire and the cladding being coated on outside cored wire Layer;The cored wire is gold by weight containing Pd 0.2-5%, Ag 25-49%, trace additives 2-200 ppm, surplus;Institute It is group more than one kind or two of which in Ca, In, Co, Be, Ga, Mg, Ce, Ni, Pt, Cu and Al to state trace additives Close;The clad is the layer gold that purity is more than 99%, and the thickness of clad is 20-200nm.
2. the compound bonding wire of billon of cladding gold according to claim 1, it is characterised in that:The trace additives The Mg and 2-50ppm of Ca, 2-50ppm containing 10-100ppm Ce.
3. the compound bonding wire of billon of cladding gold according to claim 1, it is characterised in that:The trace additives The In and 2-50ppm of Ca, 2-50ppm containing 10-80ppm Be.
4. the compound bonding wire of billon of cladding gold according to claim 1, it is characterised in that:The trace additives The Cu and 10-50ppm of Pt, 2-100ppm containing 2-50ppm Ca.
5. the compound bonding wire of billon of cladding gold according to claim 1, it is characterised in that:The trace additives The Ca and 2-20ppm of Ni, 10-100ppm containing 2-80ppm Co.
6. the compound bonding wire of billon of cladding gold according to claim 1, it is characterised in that:The trace additives The Al and 2-80ppm of Ga, 2-60ppm containing 2-50ppm Ca.
7. the manufacture method of the compound bonding wire of billon of the cladding gold described in claim 1, it is characterised in that including following steps Suddenly:
(1)Founding:Ag, Pd and trace additives are added in golden raw material in proportion, it is continuous by vacuum melting and orientation Draw casting process, obtain the core wires of a diameter of 6-8 millimeters;
(2)Wire drawing:To step(1)Obtained core wires carry out wire drawing, obtain a diameter of 50-280um(Micron)Bonding wire Cored wire;
(3)Using electroplating technology in step(2)Gold plate is coated on the bonding wire cored wire surface of acquisition, the thickness of gold plate is 150-500nm;
(4)To step(3)The obtained bonding wire cored wire for being coated with gold plate continues wire drawing, obtains a diameter of 15-40 um The compound bonding wire of billon, and the thickness of gold plate is decreased to 20-200nm;
(5)Finally anneal:Step(4)After the completion of wire drawing, the compound bonding wire of billon is finally annealed, in annealing process Using N2Come as annealing atmosphere, annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, annealing rate For 60-120m/min;
(6)Cooling:After finally annealing terminates, the compound bonding wire of billon is cooled to 20-30 DEG C, obtains required cladding gold The compound bonding wire of billon.
8. the manufacture method of the compound bonding wire of billon of cladding gold according to claim 7, it is characterised in that:Step (2)In drawing process, intermediate annealing several times is carried out to wire rod, N is used in annealing process2As annealing atmosphere, annealing Stove effective length is 600-2000mm, and annealing temperature is 500-800 DEG C, annealing rate 30-100m/min.
9. the manufacture method of the compound bonding wire of billon of cladding gold according to claim 7, it is characterised in that step(3) In electroplating technology comprise the steps:
(3-1)Remove organic matter processing:By step(2)The bonding wire cored wire of acquisition immerses the acetone ethanol that temperature is 70-150 DEG C In mixed liquor, the immersion time is the 1.4-8 seconds, the organic matter on removing bonding wire cored wire surface;Third in the acetone ethanol mixed liquor The part by weight of ketone and ethanol is 1:5-10;
(3-2)Remove oxide process:It it is 70-150 DEG C, again by the bonding wire cored wire immersion temperature by removing organic matter processing Measure in the nitric acid that percent concentration is 30-50%, the immersion time is the 1.4-8 seconds, the oxide on removing bonding wire cored wire surface;
(3-3)Surface activation process:It is 70-150 DEG C, weight that bonding wire cored wire by removing oxide process is immersed into temperature Percent concentration is in 10-30% sulfuric acid, and the immersion time is the 1.4-8 seconds, and para-linkage silk cored wire carries out surface activation process;
(3-4)It is gold-plated:Bonding wire cored wire Jing Guo surface activation process is immersed in the gold plating liquid that concentration is 2-4g/L, electroplated Electric current is gold-plated under conditions of being 0.2-0.8A, and the gold plate that thickness is 150-500nm is formed on the surface of bonding wire cored wire, should Gold plate coats bonding wire cored wire;
(3-5)Cleaning:Using pure water as cleaning fluid, ultrasonic cleaning is carried out to the bonding wire cored wire for being coated with gold plate;
(3-6)Drying:The water being attached on gold plate surface is blown away using air knife;
When being electroplated, with the continuous release steps of 5-30m/min speed(2)The bonding wire cored wire of acquisition, bonding wire cored wire according to It is secondary to be handled, after removing oxide process, surface activation process, gold-plated, cleaning and drying by above-mentioned removing organic matter, wrapped It is covered with the bonding wire cored wire of gold plate and take-up.
10. the manufacture method of the compound bonding wire of billon of cladding gold according to claim 9, it is characterised in that:Step (3-4)In, the gold plating liquid of use is potassium auricyanide solution.
CN201710801216.1A 2017-09-07 2017-09-07 A kind of compound bonding wire of billon and its manufacture method for coating gold Pending CN107665874A (en)

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CN108922876A (en) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 A kind of billon bonding wire and its manufacturing method
CN109136625A (en) * 2018-09-14 2019-01-04 深圳市品越珠宝有限公司 A kind of high hardness alloy and preparation method thereof
CN109411363A (en) * 2018-11-05 2019-03-01 深圳粤通应用材料有限公司 A kind of copper plating pure nickel gold-plated bonding wire and preparation method thereof again
CN109457143A (en) * 2018-10-30 2019-03-12 深圳粤通应用材料有限公司 A kind of pure nickel plating palladium high-temperature electric conduction silk and preparation method thereof
CN110117733A (en) * 2019-04-30 2019-08-13 汕头市骏码凯撒有限公司 A kind of electrum bonding wire and its manufacturing method
CN110438363A (en) * 2019-09-03 2019-11-12 江苏聚润硅谷新材料科技有限公司 A kind of bonding gold wire and preparation method thereof

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CN108922876A (en) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 A kind of billon bonding wire and its manufacturing method
CN108922876B (en) * 2018-06-27 2020-05-29 汕头市骏码凯撒有限公司 Gold alloy bonding wire and manufacturing method thereof
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CN108823453A (en) * 2018-06-30 2018-11-16 汕头市骏码凯撒有限公司 The low golden billon bonding wire of one kind and its manufacturing method
CN109136625A (en) * 2018-09-14 2019-01-04 深圳市品越珠宝有限公司 A kind of high hardness alloy and preparation method thereof
CN109457143A (en) * 2018-10-30 2019-03-12 深圳粤通应用材料有限公司 A kind of pure nickel plating palladium high-temperature electric conduction silk and preparation method thereof
CN109411363A (en) * 2018-11-05 2019-03-01 深圳粤通应用材料有限公司 A kind of copper plating pure nickel gold-plated bonding wire and preparation method thereof again
CN110117733A (en) * 2019-04-30 2019-08-13 汕头市骏码凯撒有限公司 A kind of electrum bonding wire and its manufacturing method
CN110438363A (en) * 2019-09-03 2019-11-12 江苏聚润硅谷新材料科技有限公司 A kind of bonding gold wire and preparation method thereof

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