CN106992164A - A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof - Google Patents

A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof Download PDF

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Publication number
CN106992164A
CN106992164A CN201710228970.0A CN201710228970A CN106992164A CN 106992164 A CN106992164 A CN 106992164A CN 201710228970 A CN201710228970 A CN 201710228970A CN 106992164 A CN106992164 A CN 106992164A
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copper alloy
copper
bonding wire
purity
content
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CN106992164B (en
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袁斌
徐云管
彭庶瑶
章敏
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JIANGXI LAN WEI ELECTRONIC TECHNOLOGY Co Ltd
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JIANGXI LAN WEI ELECTRONIC TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/4381—Cleaning, e.g. oxide removal step, desmearing
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45166—Titanium (Ti) as principal constituent
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    • H01L2924/01021—Scandium [Sc]
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    • H01L2924/01047—Silver [Ag]

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)

Abstract

A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof, the bonding wire is including the trace meter material such as silver, scandium, iron, titanium using high purity copper as material of main part.Its constitute bonding wire each composition by weight percent of material be：Copper content is：99.9% 99.95%, silver content is that 0.01% 0.02%, scandium content is that 0.01% 0.02%, iron content is：0.001% 0.015%, Ti content is 0.001% 0.01%；Its manufacture method includes：DNA purity is more than 99.99% high purity copper, it is prepared into copper alloy casting ingot, as cast condition copper alloy monocrystalline bus is made again, monocrystalline bus is drawn into 1mm or so monocrystalling wire after heat treatment, then the copper alloy monocrystal bonding wire of different size is made after accurate drawing, heat treatment, cleaning.

Description

A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof
Technical field
The present invention relates to packaging process metallic bond plying and preparation method thereof in road after microelectronics, more particularly to a kind of micro- electricity Son encapsulation copper alloy monocrystal bonding wire and preparation method thereof.
Background technology
Currently used for the lead packages bonding wire in the fields such as integrated circuit, semi-conductor discrete device it is most widely employed be Gold and silver class bonding wire.It is expensive and increasingly go up because gold and silver belong to precious metal, to consumption it is maximum in Low side LED, IC package user bring heavy cost pressure.Meanwhile, with integrated circuit and semiconductor device packaging technique to Multilead, high integration and miniaturization, encapsulating material require to enter using line footpath thinner, the more preferable bonding wire of electric property The bonding of row thin space, long range.Traditional spun gold and filamentary silver progressively level off to the limit on conductive and heat conductivility.Cause And industry is badly in need of relative inexpensiveness, new bonding wire material stable and reliable for performance to replace gold and silver-colored bonding wire.
Copper wire is as lead, with the conduction higher than spun gold and heat conductivility, and can be used for manufacture will to current loading Higher power device is sought, and radiating during high-density packages can be made more easy.The stronger tensile strength of copper wire can be with Wire diameter is set to become thinner, pad size and pad spacing also can accordingly reduce, price is cheaper than noble metal bonding wire very It is many.But the oxidizable of copper, high rigidity, into spherical aberration and carry out resin-encapsulated when easily cause wire surface corrosion be that people are closed the most The shortcoming of note.Especially under the heating environment of bonded copper balling technique, copper surface is easily aoxidized, and the oxide-film of formation reduces copper The bonding performance of line.In order to solve the above problems, the main method of research and development copper bonding wire has two kinds：High purity copper silk table finishing coat and Alloying.
Face coat mainly plates palladium using copper line surface, and copper wire core is 99.9999% bronze medal, and Pd-electroplating process is vacuum coating, A procedure is had more, cost is excessively high, and the purpose of plating palladium is the contact for completely cutting off copper wire with air, reduces its oxidation speed Rate, but in ball bonding process is burnt, because plating palladium layers are different from the recrystallization temperature of base material copper wire, easily occur duck hook etc. bad Technique.Alloying is then to form uniform copper alloy by adding alloying element to improve inoxidizability, the corrosion resistance of copper cash With balling-up, hardness etc. is reduced, but does not lose the electrical and thermal conductivity of copper, this is current research and development high-quality copper alloy bonding silk Main way.However, the copper alloy bonding wire reported at present, can improve all shortcomings of copper bonding wire without a kind of, have Its antioxygen gas is simply improved, but its electric conductivity is reduced；Its inoxidizability of some improvement and corrosion resistance, but its hardness compared with Height, plasticity is poor, it is impossible to continuously pull into filament.To find out its cause, mainly these copper alloy bonding wires only consider addition alloy member Usually improve inoxidizability, crystal grain thinning, but these increased crystal boundaries can reduce electric conductivity and and corrosion resistance, add hard Degree, does not consider from microstructure and alloying component.
The content of the invention
The purpose of the present invention is to overcome above prior art not enough there is provided a kind of bonding of microelectronics Packaging copper alloy monocrystalline Silk and preparation method thereof, it overcomes oxidizable existing copper alloys bonding wire surface, corrosion-resistant, electric conductivity reduction, hardness The problems such as high and drawing is broken.
The present invention is for the technical scheme that is used of its technical problem of solution：A kind of microelectronics Packaging copper alloy monocrystalline key Plying, composition bonding wire each composition by weight percent of material be：Silver（Ag）Content is 0.01%-0.02%, scandium（Sc）Content is 0.01%-0.02%, iron（Fe）Content is：0.001%-0.015%, titanium（Ti）Content is 0.001%-0.01%, and remaining is for copper and not Evitable impurity, sum is equal to 100%.It is required that the purity that the purity of copper is more than 99.99%, silver is more than the 99.999%, purity of scandium Purity more than 99.999%, iron, titanium is more than 99.999%.
Technical scheme is solved by following preparation method or technique：
1. high purity copper is extracted：By TU00 copper（99.99% bronze medal）As in anode immersion electrolyte, soaked using high-purity copper foil as negative electrode Enter in electrolyte；Inputted between anode, negative electrode（7-9）V、（2.5-3.5）A direct current, to supplement fresh electrolyte mode Electrolyte temperature is maintained to be no more than 60 DEG C, when the purity that negative electrode gathers constant weight is more than 99.9999% high purity copper in time more Change high-purity copper foil, then cleaned, dry for standby.
2. it is prepared into copper alloy casting ingot：DNA purity is more than 99.9999% high purity copper, then adds silver, scandium, iron, titanium； Its component content is respectively according to percentage by weight：Silver, which accounts for 0.01%-0.02%, scandium and accounts for 0.01%-0.02%, iron, accounts for 0.001%- 0.015%, titanium accounts for 0.001%-0.01%, and remaining is copper and inevitable impurity, and sum is equal to 100%.These metals are through machinery It is put into after mixing in high purity graphite crucible, melts it using electric induction furnace heating under argon gas protective condition, and then be prepared into Copper alloy casting ingot.
3. it is casting continuously to form as cast condition copper alloy monocrystalline bus：The copper alloy casting ingot prepared is added to the level for having nitrogen to protect Continuous casting of metals continuous casting of single crystal room, using Frequency Induction Heating extremely（1100-1200）DEG C, wait being completely melt, refine and degasification after, will Liquid storage tank insulation in the middle of liquation injection continuous casting room, is being maintained（2-5）In the continuous casting room of L/min nitrogen purge gas flows, completion pair The horizontal monocrystalline continuous casting of molten alloyed copper, obtains the as cast condition copper alloy list that Φ 3mm or so, vertical and horizontal number of die are 1 Brilliant bus.
4. slightly pull out：Φ 3mm or so as cast condition copper alloy monocrystalline bus is drawn into a diameter of 1mm or so copper alloy list Brilliant silk.
5. it is heat-treated：A diameter of 1mm or so copper alloy monocrystalling wire is made annealing treatment；Annealing temperature is 400- 600oC, annealing time is 2-6 hours, and protective atmosphere is 95%N2+5%H2。
6. essence is pulled out：The copper alloy monocrystalling wire precision of annealed processing is drawn into different size（0.010mm- 0.050mm）Copper alloy monocrystal bonding wire.
7. it is heat-treated：Gold and silver palladium alloy monocrystal bonding wire after essence is pulled out is made annealing treatment；Annealing temperature is 400- 600oC, annealing time is 0.2-0.6 seconds, and protective atmosphere is 95%N2+5%H2.After the completion of annealing, obtain microelectronics Packaging and closed with copper Golden monocrystal bonding wire.
8. surface clean：Acid by the microelectronics Packaging after annealing with copper alloy monocrystal bonding wire first after dilution Cleaned, then cleaned through ultrasonic wave in liquid, then cleaned, dry through high purity water.
9. bundling：Finished product microelectronics Packaging is subjected to after-combustion, bundling with copper alloy monocrystal bonding wire, packed.
The principle of the present invention：A certain amount of silver is added into copper（Ag）The purpose of element is exactly increase copper alloy anti-oxidant Property, it is ensured that the conduction and thermal conductivity of copper alloy；Scandium is added into copper（Sc）The tissue and performance of copper alloy can be greatly influenceed, can The intensity of copper alloy is significantly increased, moreover it is possible to keep the plasticity of alloy, and its corrosion resistance and balling-up（Welding performance）It is excellent. Because scandium is both rare earth metal and magnesium-yttrium-transition metal, the purification of its existing rare earth element in copper alloy and improvement ingot structure Effect, have again transition element recrystallization inhibitor act on.Micro titanium is added into copper（Ti）Main function be drop Low-alloyed cost, drops in low Sc addition, while producing very strong metamorphism and suppressing recrystallization ability.Added into copper Micro iron（Fe）The electric conductivity of copper alloy is may further ensure that, hardness is reduced.Micro- silver, scandium, the titanium of all additions Solid solution can be formed with copper with iron, without forming intermetallic compound, it is ensured that the good plasticity of copper alloy.Moreover, will Copper alloy lifts into single crystal organization, exists without crystal boundary, so can further reduce hardness, it is ensured that good electric conductivity and modeling Property.
The present invention has advantages below：The microelectronics Packaging of present invention copper alloy monocrystal bonding wire has good anti-oxidant Property and balling-up, highly conductive and thermal conductivity, soft, good plasticity and corrosion resistance.Can adapt to Electronic Packaging high-performance, it is many Function, miniaturization, the demand of low cost.
Embodiment
Embodiment 1
The present invention is achieved in that a kind of copper alloy monocrystal bonding wire using high purity copper as material of main part, constitutes the bonding wire Material be made up of the raw material of following weight percents：Silver（Ag）Content is 0.016%, scandium（Sc）Content is 0.013%, iron （Fe）Content is：0.012%th, titanium（Ti）Content is 0.006%, and remaining is copper and inevitable impurity, and sum is equal to 100%；Will Ask the purity of copper to be more than 99.99%, silver-colored purity more than the purity of 99.999%, scandium more than 99.999%, iron, the purity of titanium to be more than 99.999%。
Microelectronics Packaging is as follows with the step of preparation process and method of copper alloy monocrystal bonding wire：
1. high purity copper is extracted：By TU00 copper（99.99% bronze medal）As in anode immersion electrolyte, soaked using high-purity copper foil as negative electrode Enter in electrolyte；9V, 2.5A direct current are inputted between anode, negative electrode, electrolyte is maintained to supplement fresh electrolyte mode Temperature is no more than 60 DEG C, and high purity copper is changed in time when the purity that negative electrode gathers constant weight is more than 99.9999% high purity copper Paper tinsel, then cleaned, dry for standby.
2. it is prepared into copper alloy casting ingot：DNA purity is more than 99.9999% high purity copper, then adds silver, scandium, iron, titanium； Its component content is respectively according to percentage by weight：Silver, which accounts for 0.016%, scandium and accounts for 0.013%, iron, accounts for 0.012%, and titanium accounts for 0.006%, its Yu Weitong and inevitable impurity, sum are equal to 100%.These metals are put into after mechanical mixture in high purity graphite crucible, It is melted using electric induction furnace heating under argon gas protective condition, and then is prepared into copper alloy casting ingot.
3. it is casting continuously to form as cast condition copper alloy monocrystalline bus：The copper alloy casting ingot prepared is added to the level for having nitrogen to protect Continuous casting of metals continuous casting of single crystal room, using Frequency Induction Heating to 1200 DEG C, wait being completely melt, refine and degasification after, liquation is noted Enter the liquid storage tank insulation in the middle of continuous casting room, in the continuous casting room for maintaining 5L/min nitrogen purge gas flows, complete to molten alloyed copper Horizontal monocrystalline continuous casting, obtain the as cast condition copper alloy monocrystalline bus that Φ 3mm or so, vertical and horizontal number of die are 1.
4. slightly pull out：Φ 3mm or so as cast condition copper alloy monocrystalline bus is drawn into a diameter of 1mm or so copper alloy list Brilliant silk.
5. it is heat-treated：A diameter of 1mm or so copper alloy monocrystalling wire is made annealing treatment；Annealing temperature is 600oC, Annealing time is 3 hours, and protective atmosphere is 95%N2+5%H2。
6. essence is pulled out：The copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.018mm copper alloys monocrystalline Silk.
7. it is heat-treated：Copper alloy monocrystal bonding wire after essence is pulled out is made annealing treatment；Annealing temperature is 450oC, annealing Time is 0.2 second, and protective atmosphere is 95%N2+5%H2.After the completion of annealing, microelectronics Packaging copper alloy monocrystal bonding wire is obtained.
8. surface clean：Acid by the microelectronics Packaging after annealing with copper alloy monocrystal bonding wire first after dilution Cleaned, then cleaned through ultrasonic wave in liquid, then cleaned, dry through high purity water.
9. bundling：Finished product microelectronics Packaging is subjected to after-combustion, bundling with copper alloy monocrystal bonding wire, packed.
The copper alloy monocrystal bonding wire pull-off force is more than 0.055 N, and elongation percentage is more than 13%, and minimum blowing current is 0.29A, shows its good conductivity, and hardness is moderate, and welding balling-up is good, is highly suitable for high density, many pins Encapsulation.
Embodiment 2
The present invention is achieved in that a kind of copper alloy monocrystal bonding wire using high purity copper as material of main part, constitutes the bonding wire Material be made up of the raw material of following weight percents：Silver（Ag）Content is 0.02%, scandium（Sc）Content is 0.018%, iron （Fe）Content is：0.008%th, titanium（Ti）Content is 0.003%, and remaining is copper and inevitable impurity, and sum is equal to 100%；Will Ask the purity of copper to be more than 99.99%, silver-colored purity more than the purity of 99.999%, scandium more than 99.999%, iron, the purity of titanium to be more than 99.999%。
Microelectronics Packaging is as follows with the step of preparation process and method of copper alloy monocrystal bonding wire：
1. high purity copper is extracted：By TU00 copper（99.99% bronze medal）As in anode immersion electrolyte, soaked using high-purity copper foil as negative electrode Enter in electrolyte；8V, 3A direct current are inputted between anode, negative electrode, maintains to be electrolysed liquid temperature to supplement fresh electrolyte mode Degree is no more than 60 DEG C, and high-purity copper foil is changed in time when the purity that negative electrode gathers constant weight is more than 99.9999% high purity copper, Cleaned again, dry for standby.
2. it is prepared into copper alloy casting ingot：DNA purity is more than 99.9999% high purity copper, then adds silver, scandium, iron, titanium； Its component content is respectively according to percentage by weight：Silver, which accounts for 0.02%, scandium and accounts for 0.018%, iron, accounts for 0.008%, and titanium accounts for 0.003%, its Yu Weitong and inevitable impurity, sum are equal to 100%.These metals are put into after mechanical mixture in high purity graphite crucible, It is melted using electric induction furnace heating under argon gas protective condition, and then is prepared into copper alloy casting ingot.
3. it is casting continuously to form as cast condition copper alloy monocrystalline bus：The copper alloy casting ingot prepared is added to the level for having nitrogen to protect Continuous casting of metals continuous casting of single crystal room, using Frequency Induction Heating to 1150 DEG C, wait being completely melt, refine and degasification after, liquation is noted Enter the liquid storage tank insulation in the middle of continuous casting room, in the continuous casting room for maintaining 4L/min nitrogen purge gas flows, complete to molten alloyed copper Horizontal monocrystalline continuous casting, obtain the as cast condition copper alloy monocrystalline bus that Φ 3mm or so, vertical and horizontal number of die are 1.
4. slightly pull out：Φ 3mm or so as cast condition copper alloy monocrystalline bus is drawn into a diameter of 1mm or so copper alloy list Brilliant silk.
5. it is heat-treated：A diameter of 1mm or so copper alloy monocrystalling wire is made annealing treatment；Annealing temperature is 500oC, Annealing time is 5 hours, and protective atmosphere is 95%N2+5%H2。
6. essence is pulled out：The copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.023mm copper alloys monocrystalline Silk.
7. it is heat-treated：Copper alloy monocrystal bonding wire after essence is pulled out is made annealing treatment；Annealing temperature is 500oC, annealing Time is 0.3 second, and protective atmosphere is 95%N2+5%H2.After the completion of annealing, microelectronics Packaging copper alloy monocrystal bonding wire is obtained.
8. surface clean：Acid by the microelectronics Packaging after annealing with copper alloy monocrystal bonding wire first after dilution Cleaned, then cleaned through ultrasonic wave in liquid, then cleaned, dry through high purity water.
9. bundling：Finished product microelectronics Packaging is subjected to after-combustion, bundling with copper alloy monocrystal bonding wire, packed.
The copper alloy monocrystal bonding wire pull-off force is more than 0.088 N, and elongation percentage is more than 16%, and minimum blowing current is 0.31A, and hardness is moderate, welding balling-up is good, is highly suitable for high density, many pin encapsulation.
Embodiment 3
The present invention is achieved in that a kind of copper alloy monocrystal bonding wire using high purity copper as material of main part, constitutes the bonding wire Material be made up of the raw material of following weight percents：Silver（Ag）Content is 0.01%, scandium（Sc）Content is 0.01%, iron（Fe） Content is：0.01%th, titanium（Ti）Content is 0.01%, and remaining is copper and inevitable impurity, and sum is equal to 100%；It is required that copper The purity that purity is more than 99.99%, silver is more than more than the purity of 99.999%, scandium more than 99.999%, iron, the purity of titanium 99.999%。
Microelectronics Packaging is as follows with the step of preparation process and method of copper alloy monocrystal bonding wire：
1. high purity copper is extracted：By TU00 copper（99.99% bronze medal）As in anode immersion electrolyte, soaked using high-purity copper foil as negative electrode Enter in electrolyte；7V, 3.5A direct current are inputted between anode, negative electrode, electrolyte is maintained to supplement fresh electrolyte mode Temperature is no more than 60 DEG C, and high purity copper is changed in time when the purity that negative electrode gathers constant weight is more than 99.9999% high purity copper Paper tinsel, then cleaned, dry for standby.
2. it is prepared into copper alloy casting ingot：DNA purity is more than 99.9999% high purity copper, then adds silver, scandium, iron, titanium； Its component content is respectively according to percentage by weight：Silver, which accounts for 0.01%, scandium and accounts for 0.01%, iron, accounts for 0.01%, and titanium accounts for 0.01%, and remaining is Copper and inevitable impurity, sum are equal to 100%.These metals are put into after mechanical mixture in high purity graphite crucible, in argon gas It is melted using electric induction furnace heating under protective condition, and then is prepared into copper alloy casting ingot.
3. it is casting continuously to form as cast condition copper alloy monocrystalline bus：The copper alloy casting ingot prepared is added to the level for having nitrogen to protect Continuous casting of metals continuous casting of single crystal room, using Frequency Induction Heating to 1100 DEG C, wait being completely melt, refine and degasification after, liquation is noted Enter the liquid storage tank insulation in the middle of continuous casting room, in the continuous casting room for maintaining 3L/min nitrogen purge gas flows, complete to molten alloyed copper Horizontal monocrystalline continuous casting, obtain the as cast condition copper alloy monocrystalline bus that Φ 3mm or so, vertical and horizontal number of die are 1.
4. slightly pull out：Φ 3mm or so copper alloy monocrystalline bus is drawn into a diameter of 1mm or so copper alloy monocrystalling wire.
5. it is heat-treated：A diameter of 1mm or so copper alloy monocrystalling wire is made annealing treatment；Annealing temperature is 400oC, Annealing time is 6 hours, and protective atmosphere is 95%N2+5%H2。
6. essence is pulled out：The copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.010mm copper alloys monocrystalline Silk.
7. it is heat-treated：Copper alloy monocrystal bonding wire after essence is pulled out is made annealing treatment；Annealing temperature is 600oC, annealing Time is 0.6 second, and protective atmosphere is 95%N2+5%H2.After the completion of annealing, microelectronics Packaging copper alloy monocrystal bonding wire is obtained.
8. surface clean：Acid by the microelectronics Packaging after annealing with copper alloy monocrystal bonding wire first after dilution Cleaned, then cleaned through ultrasonic wave in liquid, then cleaned, dry through high purity water.
9. bundling：Finished product microelectronics Packaging is subjected to after-combustion, bundling with copper alloy monocrystal bonding wire, packed.
The copper alloy monocrystal bonding wire pull-off force is more than 0.043 N, and elongation percentage is more than 11%, and minimum blowing current is 0.25A, and hardness is moderate, welding balling-up is good, is highly suitable for high density, many pin encapsulation.

Claims (2)

1. a kind of microelectronics Packaging copper alloy monocrystal bonding wire, including the metal material composition such as silver, scandium, iron, titanium is a kind of micro- Copper alloy monocrystal bonding wire used for electronic packaging and preparation method thereof, its constitute bonding wire each composition by weight percent of material be： Silver（Ag）Content is 0.01%-0.02%, scandium（Sc）Content is 0.01%-0.02%, iron（Fe）Content is：0.001%-0.015%, titanium （Ti）Content is 0.001%-0.01%, and remaining is copper and inevitable impurity, and sum is equal to 100%；It is required that the purity of copper is more than 99.99%th, silver-colored purity is more than 99.999%, iron more than the purity of 99.999%, scandium, the purity of titanium is more than 99.999%.
2. a kind of preparation method of microelectronics Packaging copper alloy monocrystal bonding wire as claimed in claim 1, its work made Skill step and method are as follows：
1. high purity copper is extracted：With TU00 copper in standard GB/T/T 5231-2012（99.99% bronze medal）For base material, it is electroplated after carry The high purity copper for taking purity to be more than 99.9999%, then cleaned, dry for standby；
2. it is prepared into copper alloy casting ingot：DNA purity is more than 99.9999% high purity copper, then adds silver, scandium, iron, titanium；Its into Point content is respectively according to percentage by weight：Silver, which accounts for 0.01%-0.02%, scandium and accounts for 0.01%-0.02%, iron, accounts for 0.001%-0.015%, Titanium accounts for 0.001%-0.01%, and remaining is copper and inevitable impurity, and sum is equal to 100%；These metals are put after mechanical mixture Enter in high purity graphite crucible, it is melted using electric induction furnace heating under argon gas protective condition, and then be prepared into copper alloy casting Ingot；
3. it is casting continuously to form as cast condition copper alloy monocrystalline bus：The copper alloy casting ingot prepared is added to the horizontal casting for having nitrogen to protect Metal single crystal continuous casting room, melted using Frequency Induction Heating, refine and degasification after, by liquation injection liquid storage tank insulation, complete pair The horizontal monocrystalline continuous casting of molten alloyed copper, obtains the as cast condition copper alloy list that Φ 3mm or so, vertical and horizontal number of die are 1 Brilliant bus；
4. slightly pull out：Φ 3mm or so as cast condition copper alloy monocrystalline bus is drawn into a diameter of 1mm or so copper alloy monocrystalling wire；
5. it is heat-treated：A diameter of 1mm or so copper alloy monocrystalling wire is annealed；Annealing temperature is 400-600oC, during annealing Between be 2-6 hours, protective atmosphere is 95%N2+5%H2；
6. essence is pulled out：The finished product copper that diameter is respectively 10 μm -50 μm is drawn into copper alloy monocrystalling wire precision after heat treatment to close Golden monocrystal bonding wire；
7. it is heat-treated：Copper alloy monocrystal bonding wire after essence is pulled out is annealed；Annealing temperature is 400-600oC, annealing time For 0.2-0.6 seconds, protective atmosphere was 95%N2+5%H2；
8. surface clean：First cleaned, then cleaned through ultrasonic wave with the acid solution para-linkage silk after dilution, then through high purity water Cleaning, drying；
9. bundling：Finished product copper alloy monocrystal bonding wire is subjected to after-combustion, bundling, packaging.
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CN110592420A (en) * 2019-10-23 2019-12-20 常州恒丰特导股份有限公司 Tin-plated silver-copper alloy fuse wire for high-section glass fuse and preparation method thereof
CN110592420B (en) * 2019-10-23 2021-08-13 常州恒丰特导股份有限公司 Tin-plated silver-copper alloy fuse wire for high-breaking glass fuse and preparation method thereof
CN114369735A (en) * 2021-12-16 2022-04-19 虹华科技股份有限公司 Processing technology of high-purity copper wire for electronic chip

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