CN106992164B - A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof - Google Patents
A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof Download PDFInfo
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- CN106992164B CN106992164B CN201710228970.0A CN201710228970A CN106992164B CN 106992164 B CN106992164 B CN 106992164B CN 201710228970 A CN201710228970 A CN 201710228970A CN 106992164 B CN106992164 B CN 106992164B
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Abstract
A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof, the bonding wire are the material based on high purity copper, including silver, scandium, iron, titanium trace meter material.Its each composition by weight percent of material for forming bonding wire are as follows: copper content are as follows: 99.9%-99.95%, silver content 0.01%-0.02%, scandium content be 0.01%-0.02%, iron content are as follows: 0.001%-0.015%, Ti content 0.001%-0.01%；Its manufacturing method includes: the high purity copper that DNA purity is greater than 99.99%, it is prepared into copper alloy casting ingot, as cast condition copper alloy monocrystalline bus is made again, monocrystalline bus is drawn into the monocrystalling wire of 1mm after heat treatment, then the copper alloy monocrystal bonding wire of different size is made after accurate drawing, heat treatment, cleaning.
Description
Technical field
The present invention relates to the metallic bond plying and preparation method thereof of road packaging process after microelectronics more particularly to a kind of micro- electricity
Son encapsulation copper alloy monocrystal bonding wire and preparation method thereof.
Background technique
Lead packages bonding wire currently used for fields such as integrated circuit, semi-conductor discrete devices it is most widely employed be
Gold and silver class bonding wire.It is expensive and increasingly go up due to gold and silver category precious metal, to dosage it is maximum in
Low side LED, IC package user bring heavy cost pressure.Meanwhile with integrated circuit and semiconductor device packaging technique to
Multilead, high integration and miniaturization, encapsulating material require using line footpath thinner, the better bonding wire of electric property into
The bonding of row thin space, long range.Traditional spun gold and filamentary silver gradually levels off to the limit on conductive and heating conduction.Cause
And industry is badly in need of relative inexpensiveness, novel bonding wire material stable and reliable for performance to replace gold and silver-colored bonding wire.
Copper wire has the conduction and heating conduction higher than spun gold as lead, can be used for manufacturing and want to current loading
Higher power device is sought, and heat dissipation when high-density packages can be made more easy.The stronger tensile strength of copper wire can be with
Wire diameter is set to become thinner, pad size and pad spacing also can accordingly reduce, and price is cheaply very than noble metal bonding wire
It is more.But the oxidizable of copper, high rigidity, at spherical aberration and carry out resin-encapsulated when easily cause wire surface corrosion be that people are closed the most
The shortcomings that note.Especially under the heating environment of bonded copper balling technique, copper surface is easily aoxidized, and the oxidation film of formation reduces copper
The bonding performance of line.To solve the above-mentioned problems, there are two types of the main methods for researching and developing copper bonding wire: high purity copper silk table finishing coat and
Alloying.
Surface covering mainly uses copper line surface to plate palladium, and copper wire core material is 99.9999% bronze medal, and Pd-electroplating process is Vacuum Deposition
Film has more a procedure, and cost is excessively high, and the purpose for plating palladium is the contact for completely cutting off copper wire with air, reduces its oxidation
Rate, but in burning ball bonding process, since plating palladium layers are different from the recrystallization temperature of substrate copper wire, it is easy to happen duck hook etc. no
Skilled worker's skill.Alloying is then to form uniform copper alloy by adding alloying element to improve the inoxidizability of copper wire, corrosion-resistant
Property and balling-up, reduce hardness etc., but do not lose the electrical and thermal conductivity of copper, this is current research and development high-quality copper alloy bonding silk
Main way.However, the copper alloy bonding wire reported at present, can improve all disadvantages of copper bonding wire without one kind, have
Only improve its antioxygen gas, but its electric conductivity reduces；Its inoxidizability of some improvement and corrosion resistance, but its hardness compared with
Height, plasticity is poor, cannot continuously pull into filament.To find out its cause, mainly these copper alloy bonding wires only consider to add alloy member
Usually improve inoxidizability, refine crystal grain, but these increased crystal boundaries can reduce electric conductivity and and corrosion resistance, increase hard
Degree, does not comprehensively consider from microstructure and alloying component.
Summary of the invention
The purpose of the present invention is overcoming the above prior art insufficient, a kind of microelectronics Packaging copper alloy monocrystalline bonding is provided
Silk and preparation method thereof, it overcomes oxidizable existing copper alloys bonding wire surface, poor corrosion resistance, electric conductivity reduction, hardness
The problems such as high and drawing broken string.
The present invention is that technical solution used by solving its technical problem is: a kind of microelectronics Packaging copper alloy monocrystalline key
Plying forms each composition by weight percent of material of bonding wire are as follows: silver-colored (Ag) content is 0.01%-0.02%, scandium (Sc) content
For 0.01%-0.02%, iron (Fe) content are as follows: 0.001%-0.015%, titanium (Ti) content are 0.001%-0.01%, remaining
For copper and inevitable impurity, the sum of be equal to 100%.It is required that the purity that the purity of copper is greater than 99.99%, silver is greater than
99.999%, the purity of scandium is greater than 99.999%, iron, the purity of titanium is greater than 99.999%.
Technical solution of the present invention is resolved by following preparation method or technique:
1. extracting high purity copper: TU00 copper (99.99% bronze medal) being immersed in electrolyte as anode, using high-purity copper foil as yin
Pole is immersed in electrolyte；The direct current of (7-9) V, (2.5-3.5) A are inputted, between anode, cathode to supplement fresh electrolyte
Mode maintains electrolyte temperature to be no more than 60 DEG C, when the purity of cathode accumulation constant weight is greater than 99.9999% high purity copper
Replace high-purity copper foil in time, then it is cleaned, be dried for standby.
2. being prepared into copper alloy casting ingot: DNA purity is greater than 99.9999% high purity copper, and silver, scandium, iron, titanium is then added；
Its component content is respectively as follows: that silver accounts for 0.01%-0.02%, scandium accounts for 0.01%-0.02%, iron is accounted for according to weight percent
0.001%-0.015%, titanium account for 0.001%-0.01%, remaining be copper and inevitable impurity, the sum of be equal to 100%.This
A little metals are put into high purity graphite crucible after mechanical mixture, keep it molten using electric induction furnace heating under the protection of argon gas
Change, and then is prepared into copper alloy casting ingot.
3. being casting continuously to form as cast condition copper alloy monocrystalline bus: the copper alloy casting ingot prepared, which is added, has the horizontal of nitrogen protection to connect
Ingot metal continuous casting of single crystal room, using mid-frequency induction heating to (1100-1200) DEG C, wait be completely melt, refine and degasification after, will melt
The liquid storage tank heat preservation that liquid injects among continuous casting room is completed in the continuous casting room of maintenance (2-5) L/min nitrogen purge gas flow to copper
The horizontal monocrystalline continuous casting of alloy molten solution obtains Φ 3mm, vertical and horizontal number of die is 1 as cast condition copper alloy monocrystalline bus.
4. slightly pulling out: the as cast condition copper alloy monocrystalline bus of Φ 3mm is drawn into the copper alloy monocrystalling wire that diameter is 1mm.
5. heat treatment: the copper alloy monocrystalling wire that diameter is 1mm is made annealing treatment；Annealing temperature is 400-600 DEG C, is moved back
The fiery time is 2-6 hours, protective atmosphere 95%N2+ 5%H2。
6. essence is pulled out: the copper alloy monocrystalling wire precision of annealed processing is drawn into (the 0.010mm- of different size
0.050mm) copper alloy monocrystal bonding wire.
7. heat treatment: the gold and silver palladium alloy monocrystal bonding wire after essence is pulled out makes annealing treatment；Annealing temperature is 400-600
DEG C, annealing time is 0.2-0.6 seconds, protective atmosphere 95%N2+ 5%H2.After the completion of annealing, obtains microelectronics Packaging and closed with copper
Golden monocrystal bonding wire.
8. surface clean: by the first acid solution after diluting of the microelectronics Packaging copper alloy monocrystal bonding wire after annealing
In cleaned, then through ultrasonic cleaning, then through high purity water cleaning, drying.
9. bundling: finished product microelectronics Packaging being carried out after-combustion with copper alloy monocrystal bonding wire, bundling, is packed.
The principle of the present invention: the purpose that a certain amount of silver-colored (Ag) element is added into copper is exactly increase copper alloy anti-oxidant
Property, guarantee the conduction and thermal conductivity of copper alloy；Scandium (Sc) is added into copper can greatly influence the tissue and performance of copper alloy, can
The intensity of copper alloy is significantly increased, moreover it is possible to keep the plasticity of alloy, and its corrosion resistance and balling-up (welding performance) are excellent.
Because scandium is both rare earth metal and magnesium-yttrium-transition metal, the purification and improvement ingot structure of its existing rare earth element in copper alloy
Effect, and have transition element recrystallization inhibitor act on.The main function that micro titanium (Ti) is added into copper is drop
Low-alloyed cost drops in the additive amount of low Sc, while generating very strong metamorphism and inhibiting recrystallization ability.It is added into copper
Micro iron (Fe) may further ensure that the electric conductivity of copper alloy, reduce hardness.Microelement silver, the scandium, titanium of all additions
Solid solution being formed with copper with iron, without will form intermetallic compound, guaranteeing the good plasticity of copper alloy.Moreover, will
Copper alloy lifting exists without crystal boundary at single crystal organization, can further decrease hardness in this way, guarantee good electric conductivity and modeling
Property.
The invention has the following advantages that microelectronics Packaging of the invention is with copper alloy monocrystal bonding wire with good anti-oxidant
Property and balling-up, highly conductive and thermal conductivity, soft, good plasticity and corrosion resistance.It can adapt to Electronic Packaging high-performance, more
Function, micromation, low cost demand.
Specific embodiment
Embodiment 1
The invention is realized in this way a kind of copper alloy monocrystal bonding wire of the material based on high purity copper, forms the key
The material of plying is made of the raw material of following weight percents: silver-colored (Ag) content is that 0.016%, scandium (Sc) content is
0.013%, iron (Fe) content are as follows: 0.012%, titanium (Ti) content be 0.006%, remaining be copper and inevitable impurity, it
Be equal to 100%；It is required that the purity that the purity that the purity of copper is greater than 99.99%, silver is greater than 99.999%, scandium is greater than
99.999%, the purity of iron, titanium is greater than 99.999%.
The step of preparation process and method of microelectronics Packaging copper alloy monocrystal bonding wire are as follows:
1. extracting high purity copper: TU00 copper (99.99% bronze medal) being immersed in electrolyte as anode, using high-purity copper foil as yin
Pole is immersed in electrolyte；The direct current that 9V, 2.5A are inputted between anode, cathode maintains electricity in a manner of fresh electrolyte to supplement
It solves liquid temperature and is no more than 60 DEG C, replace height in time when the purity of cathode accumulation constant weight is greater than 99.9999% high purity copper
Pure copper foil, then it is cleaned, be dried for standby.
2. being prepared into copper alloy casting ingot: DNA purity is greater than 99.9999% high purity copper, and silver, scandium, iron, titanium is then added；
Its component content, which according to weight percent is respectively as follows: silver and accounts for 0.016%, scandium and account for 0.013%, iron, accounts for 0.012%, and titanium accounts for
0.006%, remaining be copper and inevitable impurity, the sum of be equal to 100%.These metals are put into high-purity stone after mechanical mixture
In black crucible, make its fusing using electric induction furnace heating under the protection of argon gas, and then be prepared into copper alloy casting ingot.
3. being casting continuously to form as cast condition copper alloy monocrystalline bus: the copper alloy casting ingot prepared, which is added, has the horizontal of nitrogen protection to connect
Ingot metal continuous casting of single crystal room, using mid-frequency induction heating to 1200 DEG C, wait be completely melt, refine and degasification after, melt is injected
Liquid storage tank heat preservation among continuous casting room is completed in the continuous casting room for maintaining 5L/min nitrogen purge gas flow to molten alloyed copper
Horizontal monocrystalline continuous casting obtains Φ 3mm, vertical and horizontal number of die is 1 as cast condition copper alloy monocrystalline bus.
4. slightly pulling out: the as cast condition copper alloy monocrystalline bus of Φ 3mm is drawn into the copper alloy monocrystalling wire that diameter is 1mm.
5. heat treatment: the copper alloy monocrystalling wire that diameter is 1mm is made annealing treatment；Annealing temperature is 600 DEG C, when annealing
Between be 3 hours, protective atmosphere 95%N2+ 5%H2。
6. essence is pulled out: the copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.018mm copper alloy monocrystalline
Silk.
7. heat treatment: the copper alloy monocrystal bonding wire after essence is pulled out makes annealing treatment；Annealing temperature is 450 DEG C, annealing
Time is 0.2 second, protective atmosphere 95%N2+ 5%H2.After the completion of annealing, the bonding of microelectronics Packaging copper alloy monocrystalline is obtained
Silk.
8. surface clean: by the first acid solution after diluting of the microelectronics Packaging copper alloy monocrystal bonding wire after annealing
In cleaned, then through ultrasonic cleaning, then through high purity water cleaning, drying.
9. bundling: finished product microelectronics Packaging being carried out after-combustion with copper alloy monocrystal bonding wire, bundling, is packed.
The copper alloy monocrystal bonding wire pull-off force is greater than 0.055N, and elongation percentage is greater than 13%, and minimum blowing current is
0.29A shows its good conductivity, and hardness is moderate, and welding balling-up is good, is highly suitable for high density, more pin integrated circuits
Encapsulation.
Embodiment 2
The invention is realized in this way a kind of copper alloy monocrystal bonding wire of the material based on high purity copper, forms the key
The material of plying is made of the raw material of following weight percents: silver-colored (Ag) content is that 0.02%, scandium (Sc) content is
0.018%, iron (Fe) content are as follows: 0.008%, titanium (Ti) content be 0.003%, remaining be copper and inevitable impurity, it
Be equal to 100%；It is required that the purity that the purity that the purity of copper is greater than 99.99%, silver is greater than 99.999%, scandium is greater than
99.999%, the purity of iron, titanium is greater than 99.999%.
The step of preparation process and method of microelectronics Packaging copper alloy monocrystal bonding wire are as follows:
1. extracting high purity copper: TU00 copper (99.99% bronze medal) being immersed in electrolyte as anode, using high-purity copper foil as yin
Pole is immersed in electrolyte；The direct current that 8V, 3A are inputted between anode, cathode maintains to be electrolysed in a manner of fresh electrolyte to supplement
Liquid temperature is no more than 60 DEG C, replaces in time when the purity of cathode accumulation constant weight is greater than 99.9999% high purity copper high-purity
Copper foil, then it is cleaned, be dried for standby.
2. being prepared into copper alloy casting ingot: DNA purity is greater than 99.9999% high purity copper, and silver, scandium, iron, titanium is then added；
Its component content, which according to weight percent is respectively as follows: silver and accounts for 0.02%, scandium and account for 0.018%, iron, accounts for 0.008%, and titanium accounts for
0.003%, remaining be copper and inevitable impurity, the sum of be equal to 100%.These metals are put into high-purity stone after mechanical mixture
In black crucible, make its fusing using electric induction furnace heating under the protection of argon gas, and then be prepared into copper alloy casting ingot.
3. being casting continuously to form as cast condition copper alloy monocrystalline bus: the copper alloy casting ingot prepared, which is added, has the horizontal of nitrogen protection to connect
Ingot metal continuous casting of single crystal room, using mid-frequency induction heating to 1150 DEG C, wait be completely melt, refine and degasification after, melt is injected
Liquid storage tank heat preservation among continuous casting room is completed in the continuous casting room for maintaining 4L/min nitrogen purge gas flow to molten alloyed copper
Horizontal monocrystalline continuous casting obtains Φ 3mm, vertical and horizontal number of die is 1 as cast condition copper alloy monocrystalline bus.
4. slightly pulling out: the as cast condition copper alloy monocrystalline bus of Φ 3mm is drawn into the copper alloy monocrystalling wire that diameter is 1mm.
5. heat treatment: the copper alloy monocrystalling wire that diameter is 1mm is made annealing treatment；Annealing temperature is 500 DEG C, when annealing
Between be 5 hours, protective atmosphere 95%N2+ 5%H2。
6. essence is pulled out: the copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.023mm copper alloy monocrystalline
Silk.
7. heat treatment: the copper alloy monocrystal bonding wire after essence is pulled out makes annealing treatment；Annealing temperature is 500 DEG C, annealing
Time is 0.3 second, protective atmosphere 95%N2+ 5%H2.After the completion of annealing, the bonding of microelectronics Packaging copper alloy monocrystalline is obtained
Silk.
8. surface clean: by the first acid solution after diluting of the microelectronics Packaging copper alloy monocrystal bonding wire after annealing
In cleaned, then through ultrasonic cleaning, then through high purity water cleaning, drying.
9. bundling: finished product microelectronics Packaging being carried out after-combustion with copper alloy monocrystal bonding wire, bundling, is packed.
The copper alloy monocrystal bonding wire pull-off force is greater than 0.088N, and elongation percentage is greater than 16%, and minimum blowing current is
0.31A, and hardness is moderate, welding balling-up is good, is highly suitable for high density, more pin integrated circuit encapsulation.
Embodiment 3
The invention is realized in this way a kind of copper alloy monocrystal bonding wire of the material based on high purity copper, forms the key
The material of plying is made of the raw material of following weight percents: silver-colored (Ag) content is 0.01%, scandium (Sc) content is 0.01%,
Iron (Fe) content are as follows: 0.01%, titanium (Ti) content be 0.01%, remaining be copper and inevitable impurity, the sum of be equal to
100%；It is required that the purity that the purity that the purity of copper is greater than 99.99%, silver is greater than 99.999%, scandium is greater than 99.999%, iron, titanium
Purity be greater than 99.999%.
The step of preparation process and method of microelectronics Packaging copper alloy monocrystal bonding wire are as follows:
1. extracting high purity copper: TU00 copper (99.99% bronze medal) being immersed in electrolyte as anode, using high-purity copper foil as yin
Pole is immersed in electrolyte；The direct current that 7V, 3.5A are inputted between anode, cathode maintains electricity in a manner of fresh electrolyte to supplement
It solves liquid temperature and is no more than 60 DEG C, replace height in time when the purity of cathode accumulation constant weight is greater than 99.9999% high purity copper
Pure copper foil, then it is cleaned, be dried for standby.
2. being prepared into copper alloy casting ingot: DNA purity is greater than 99.9999% high purity copper, and silver, scandium, iron, titanium is then added；
Its component content, which according to weight percent is respectively as follows: silver and accounts for 0.01%, scandium and account for 0.01%, iron, accounts for 0.01%, and titanium accounts for 0.01%,
Yu Weitong and inevitable impurity, the sum of be equal to 100%.These metals are put into high purity graphite crucible after mechanical mixture,
Make its fusing using electric induction furnace heating under the protection of argon gas, and then is prepared into copper alloy casting ingot.
3. being casting continuously to form as cast condition copper alloy monocrystalline bus: the copper alloy casting ingot prepared, which is added, has the horizontal of nitrogen protection to connect
Ingot metal continuous casting of single crystal room, using mid-frequency induction heating to 1100 DEG C, wait be completely melt, refine and degasification after, melt is injected
Liquid storage tank heat preservation among continuous casting room is completed in the continuous casting room for maintaining 3L/min nitrogen purge gas flow to molten alloyed copper
Horizontal monocrystalline continuous casting obtains Φ 3mm, vertical and horizontal number of die is 1 as cast condition copper alloy monocrystalline bus.
4. slightly pulling out: the copper alloy monocrystalline bus of Φ 3mm is drawn into the copper alloy monocrystalling wire that diameter is 1mm.
5. heat treatment: the copper alloy monocrystalling wire that diameter is 1mm is made annealing treatment；Annealing temperature is 400 DEG C, when annealing
Between be 6 hours, protective atmosphere 95%N2+ 5%H2。
6. essence is pulled out: the copper alloy monocrystalling wire precision of annealed processing is drawn into the bonding of diameter 0.010mm copper alloy monocrystalline
Silk.
7. heat treatment: the copper alloy monocrystal bonding wire after essence is pulled out makes annealing treatment；Annealing temperature is 600 DEG C, annealing
Time is 0.6 second, protective atmosphere 95%N2+ 5%H2.After the completion of annealing, the bonding of microelectronics Packaging copper alloy monocrystalline is obtained
Silk.
8. surface clean: by the first acid solution after diluting of the microelectronics Packaging copper alloy monocrystal bonding wire after annealing
In cleaned, then through ultrasonic cleaning, then through high purity water cleaning, drying.
9. bundling: finished product microelectronics Packaging being carried out after-combustion with copper alloy monocrystal bonding wire, bundling, is packed.
The copper alloy monocrystal bonding wire pull-off force is greater than 0.043N, and elongation percentage is greater than 11%, and minimum blowing current is
0.25A, and hardness is moderate, welding balling-up is good, is highly suitable for high density, more pin integrated circuit encapsulation.
Claims (2)
1. a kind of microelectronics Packaging copper alloy monocrystal bonding wire, a kind of micro- electricity formed including silver, scandium, iron, titanium metal material
Son encapsulation copper alloy monocrystal bonding wire and preparation method thereof, forms each composition by weight percent of material of bonding wire are as follows: silver
(Ag) content is 0.01%-0.02%, scandium (Sc) content is 0.01%-0.02%, iron (Fe) content are as follows: 0.001%-0.015%, titanium
(Ti) content be 0.001%-0.01%, remaining be copper and inevitable impurity, the sum of be equal to 100%；It is required that the purity of copper is greater than
99.99%, the purity that silver-colored purity is greater than 99.999%, scandium is greater than 99.999%, iron, the purity of titanium is greater than 99.999%.
2. a kind of preparation method of microelectronics Packaging copper alloy monocrystal bonding wire as described in claim 1, the work of production
Skill step and method are as follows:
1. extracting high purity copper: with TU00 copper (99.99% bronze medal) in standard GB/T/T 5231-2012 for substrate, being mentioned after electroplated
Take purity be greater than 99.9999% high purity copper, then it is cleaned, be dried for standby；
2. being prepared into copper alloy casting ingot: DNA purity is greater than 99.9999% high purity copper, and silver, scandium, iron, titanium is then added；Its at
Point content is respectively as follows: that silver accounts for 0.01%-0.02%, scandium accounts for 0.01%-0.02%, iron accounts for 0.001%-0.015% according to weight percent,
Titanium accounts for 0.001%-0.01%, remaining be copper and inevitable impurity, the sum of be equal to 100%；These metals are put after mechanical mixture
Enter in high purity graphite crucible, make its fusing using electric induction furnace heating under the protection of argon gas, and then is prepared into copper alloy casting
Ingot；
3. being casting continuously to form as cast condition copper alloy monocrystalline bus: the copper alloy casting ingot prepared is added to the horizontal casting for having nitrogen protection
Metal single crystal continuous casting room, after mid-frequency induction heating fusing, refining and degasification, by melt injection liquid storage tank heat preservation, completion pair
The horizontal monocrystalline continuous casting of molten alloyed copper, obtain Φ 3mm, vertical and horizontal number of die be 1 as cast condition copper alloy monocrystalline it is female
Line；
4. slightly pulling out: the as cast condition copper alloy monocrystalline bus of Φ 3mm is drawn into the copper alloy monocrystalling wire that diameter is 1mm；
5. heat treatment: the copper alloy monocrystalling wire that diameter is 1mm is annealed；Annealing temperature is 400-600oC, annealing time are
2-6 hours, protective atmosphere 95%N2+5%H2；
6. essence is pulled out: being drawn into the finished product copper that diameter is respectively 10 μm -50 μm to copper alloy monocrystalling wire precision after heat treatment and close
Golden monocrystal bonding wire；
7. heat treatment: the copper alloy monocrystal bonding wire after essence is pulled out is annealed；Annealing temperature is 400-600oC, annealing time
It is 0.2-0.6 seconds, protective atmosphere 95%N2+5%H2；
8. surface clean: first being cleaned with the acid solution para-linkage silk after dilution, then through ultrasonic cleaning, then through high purity water
Cleaning, drying；
9. bundling: finished product copper alloy monocrystal bonding wire is carried out after-combustion, bundling, packaging.
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| CN106992164B (en) * | 2017-04-10 | 2019-03-01 | 江西蓝微电子科技有限公司 | A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof |
| CN107799496B (en) * | 2017-09-01 | 2020-05-22 | 华南理工大学 | High-reliability copper alloy bonding wire for electronic packaging and preparation method thereof |
| CN109473413A (en) * | 2018-11-09 | 2019-03-15 | 上海理工大学 | Oxidation resistant copper-based bonding wire of one kind and preparation method thereof |
| CN110592420B (en) * | 2019-10-23 | 2021-08-13 | 常州恒丰特导股份有限公司 | Tin-plated silver-copper alloy fuse wire for high-breaking glass fuse and preparation method thereof |
| CN114369735A (en) * | 2021-12-16 | 2022-04-19 | 虹华科技股份有限公司 | Processing technology of high-purity copper wire for electronic chip |
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