CN103779309A - Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof - Google Patents
Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof Download PDFInfo
- Publication number
- CN103779309A CN103779309A CN201410024437.9A CN201410024437A CN103779309A CN 103779309 A CN103779309 A CN 103779309A CN 201410024437 A CN201410024437 A CN 201410024437A CN 103779309 A CN103779309 A CN 103779309A
- Authority
- CN
- China
- Prior art keywords
- gold
- silver
- purity
- alloy
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
- H01L2224/43125—Plating, e.g. electroplating, electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention provides a gold-plating gold and silver palladium alloy single-crystal bonding filament and a manufacturing method thereof. The bonding filament is mainly made of high-purity silver and comprises metal, palladium, europium, lanthanum and other trace metal materials. The bonding filament comprises, by weight, 97.713%-98.157% of silver, 1.8%-2.2% of gold, 0.04%-0.08% of palladium, 0.002%-0.004% of europium and 0.001%-0.003% of lanthanum. The manufacturing method of the gold-plating gold and silver palladium alloy single-crystal bonding filament comprises the steps that high-purity silver with the purity larger than 99.9999% is extracted, a silver alloy ingot is manufactured, a cast-condition gold and silver palladium alloy single-crystal bus is manufactured, the single-crystal bus is pulled to be a single-crystal filament which is about 1mm long, after thermal processing, a pure-gold protection layer is electroplated on the surface of the single-crystal filament, and gold-plating gold and silver palladium alloy single-crystal bonding filament of different specifications are manufactured after precise pulling, thermal processing and washing.
Description
Technical field
The invention belongs to microelectronics technology, relate to the metallic bond plying of road packaging process and manufacture method thereof after microelectronics, relate in particular to gold-plated gold and silver palladium alloy monocrystal bonding wire and manufacture method thereof that the alloy materials such as a kind of gold-plated gold and silver palladium are made.
Background technology
What the most extensively adopt for the lead packages bonding wire in the field such as integrated circuit, semi-conductor discrete device at present is gold class bonding wire.Because gold belongs to precious metal, expensive and rise day by day, brings heavy cost pressure to low and middle-end LED, the IC encapsulation user of consumption maximum.Thereby industry is badly in need of cost novel key plying material relatively cheap, stable and reliable for performance in order to replace gold bonding wire.The advantage of the existing money base class of the gold-plated gold and silver palladium alloy monocrystal bonding wire bonding wire take high purity silver as material of main part is taken into account again the advantage of gold class bonding wire, is the reliable and stable a kind of novel key plying again of a kind of relative low price and performance.
Summary of the invention
The object of this invention is to provide a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire and manufacture method thereof take high purity silver as material of main part, it overcomes that existing alloy type bonding brass wire, aluminium wire surface are oxidizable, poor high temperature stability and drawing broken string problem, and the high deficiency of gold class bonding wire production cost.
For achieving the above object, the technical solution adopted in the present invention is: a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire, the each composition percentage by weight of material of composition bonding wire is: gold (Au) accounts for 1.8%-2.2%, palladium (Pd) and accounts for that 0.04%-0.08%, europium (Eu) account for 0.002%-0.004%, lanthanum (La) accounts for 0.001%-0.003%, and silver (Ag) accounts for 97.713%-98.157%.
Require that golden purity is greater than 99.99%, the purity of silver is greater than 99.9999%, the purity of palladium is greater than 99.999%, the purity of europium is greater than 99.9%, the purity of lanthanum is greater than 99.5%.
The manufacture method step of described gold-plated gold and silver palladium alloy monocrystal bonding wire is as follows:
1. extract high purity silver: immerse No. 1 silver (IC-Ag99.99) as anode in electrolyte, immerse using high-purity silver foil as negative electrode in electrolyte; The direct current of input (7-9) V, (2.5-3.5) A between anode, negative electrode, maintain electrolyte temperature and be no more than 60 ℃ to supplement fresh electrolyte mode, when the purity of gathering constant weight until negative electrode is greater than 99.9999% high purity silver, change in time high-purity silver foil, then through cleaning, dry for standby.
2. be prepared into silver alloy ingot casting: the high purity silver that DNA purity is greater than 99.9999%, then add gold, palladium, europium, lanthanum, component content is respectively according to percentage by weight: gold accounts for 0.9%-1.1%, palladium and accounts for that 0.04%-0.08%, europium account for 0.002%-0.004%, lanthanum accounts for 0.001%-0.003%, silver accounts for 97.713%-98.157%, because leave the surplus of electrogilding in subsequent technique, so every quality of materials percentage sum is not equal to 100% here.These metals are put into high purity graphite crucible after mechanical mixture, and under inert gas shielding condition, use sense answers heating by electric cooker to make its fusing, and then is prepared into silver alloy ingot casting.
3. continuous casting becomes as cast condition gold silver palladium alloy single crystal bus: the silver alloy ingot casting preparing is added and has the horizontal casting of nitrogen protection metal single crystal continuous casting chamber; application Frequency Induction Heating is to (1100-1150) ℃; until melting completely, after refining and degasification; liquation is injected to the liquid storage tank insulation in the middle of continuous casting chamber; maintaining in the continuous casting chamber of (2-5) L/min nitrogen purge gas flow; complete the horizontal continuous casting of single crystal to gold and silver palldium alloy liquation, obtain about Φ 3mm, vertical and horizontal number of die is the as cast condition gold silver palladium alloy single crystal bus of 1.
4. slightly pull out: the golden silver palladium alloy single crystal bus of Φ 3mm left and right is drawn into the gold and silver palldium alloy monocrystalling wire that diameter is 1mm left and right.
5. heat treatment: the gold and silver palldium alloy monocrystalling wire that is 1mm left and right by diameter carries out annealing in process.
6. surface gold-plating: adopt conventional electroplating device and technique, the gold and silver palldium alloy monocrystalling wire of the 1mm left and right after annealing is electroplated to proof gold protection against oxidation layer, plating is greater than 99.99% by golden purity; Current density (4-4.5) A/dm
2, thickness of coating is controlled at 1 μ m-1.5 μ m, and take-up speed is (4-5) m/min; In gold-plated gold and silver palldium alloy monocrystalling wire after gold-plated, the golden percentage that accounts for total weight is controlled at 1.8%-2.2%.
7. essence is pulled out: the gold-plated gold and silver palldium alloy monocrystalling wire precision that is 1mm left and right by diameter is drawn into (0.013mm-0.050mm) gold-plated gold and silver palladium alloy monocrystal bonding wire of different size.
8. heat treatment: the gold-plated gold and silver palladium alloy monocrystal bonding wire after essence is pulled out carries out annealing in process.
9. surface clean: the gold-plated gold and silver palladium alloy monocrystal bonding wire after annealing in process is first cleaned in the acid solution after dilution, then through Ultrasonic Cleaning, then clean, dry through high purity water.
10. bundling: gold-plated finished product gold and silver palladium alloy monocrystal bonding wire is carried out to after-combustion, bundling, packing.
Technique effect of the present invention is: the advantage of the existing money base class of the gold-plated gold and silver palladium alloy monocrystal bonding wire bonding wire take high purity silver as material of main part is taken into account again the advantage of gold class bonding wire, is the reliable and stable a kind of novel key plying again of a kind of relative low price and performance.It it overcome that existing alloy type bonding brass wire, aluminium wire surface are oxidizable, poor high temperature stability and drawing broken string problem, and the high deficiency of gold class bonding wire production cost.
Embodiment
For the ease of understanding, below in conjunction with specific embodiment, the present invention is further described.
embodiment 1
A kind of gold-plated gold and silver palladium alloy monocrystal bonding wire take high purity silver as material of main part, the material that forms this bonding wire is made up of the raw material of following percentage by weight: gold (Au) accounts for 1.8%, palladium (Pd) accounts for 0.04%, europium (Eu) accounts for 0.002%, lanthanum (La) accounts for 0.001%, and silver (Ag) accounts for 98.157%; Require that golden purity is greater than 99.99%, the purity of silver is greater than 99.9999%, the purity of palladium is greater than 99.999%, the purity of europium is greater than 99.9%, the purity of lanthanum is greater than 99.5%.
Its manufacturing process steps and method are as follows:
1. extract high purity silver: take No. 1 silver (IC-Ag99.99) in standard GB/T/T4135 as base material, the high purity silver that DNA purity is greater than 99.9999%, through cleaning, dry for standby.
2. be prepared into silver alloy ingot casting: prepare raw material (the percentage by weight here refers to that each raw material account for the percentage of bonding wire gross mass rather than each raw material and account for the percentage of the raw material gross mass of preparing silver alloy ingot casting) by aforesaid bonding wire constituent percentage by weight, wherein gold (Au) shared percentage by weight be 0.9% rather than 1.8%(gold account for 1.8% refer to comprised the percentage by weight of surface gold-plating in subsequent handling), in high purity silver, add High Purity Gold, palladium, europium, lanthanum, these metals are put into high purity graphite crucible after mechanical mixture, under inert gas shielding condition, use sense answers heating by electric cooker to make its fusing, and then be prepared into silver alloy ingot casting.
3. continuous casting becomes as cast condition gold silver palladium alloy single crystal bus: the silver alloy ingot casting preparing is added and has the horizontal casting of nitrogen protection metal single crystal continuous casting chamber; after application Frequency Induction Heating, fusing, refining and degasification; liquation is injected to liquid storage tank insulation; complete the horizontal continuous casting of single crystal to gold and silver palldium alloy liquation, obtain about Φ 3mm, vertical and horizontal number of die is the as cast condition gold silver palladium alloy single crystal bus of 1.
4. slightly pull out: the golden silver palladium alloy single crystal bus of Φ 3mm left and right is drawn into the gold and silver palldium alloy monocrystalling wire that diameter is 1mm left and right.
5. heat treatment: the gold and silver palldium alloy monocrystalling wire that is 1mm left and right by diameter carries out annealing in process.
6. surface gold-plating: adopt conventional electroplating device and technique, to electroplating proof gold protection against oxidation layer through the gold and silver palldium alloy monocrystalling wire of heat treated 1mm left and right, require golden purity to be greater than 99.99%, current density 4A/dm when plating
2, take-up speed is 4m/min, and the THICKNESS CONTROL of surface gold-plating layer is at 1 μ m, and in the gold-plated gold and silver palldium alloy monocrystalling wire after gold-plated, the golden percentage that accounts for total weight is 1.8%.
7. essence is pulled out: will be drawn into (0.013mm-0.050mm) gold-plated gold and silver palladium alloy monocrystal bonding wire of different size through the gold-plated gold and silver palldium alloy monocrystalling wire precision of annealing in process.
8. heat treatment: the gold-plated gold and silver palladium alloy monocrystal bonding wire after essence is pulled out carries out annealing in process.
9. surface clean: the gold-plated gold and silver palladium alloy monocrystal bonding wire after annealing in process is first cleaned in the acid solution after dilution, then through Ultrasonic Cleaning, then clean, dry through high purity water.
embodiment 2
The present invention realizes like this, a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire take high purity silver as material of main part, the material that forms this bonding wire is made up of the raw material of following percentage by weight: gold (Au) accounts for 2.2%, palladium (Pd) accounts for 0.08%, europium (Eu) accounts for 0.004%, lanthanum (La) accounts for 0.003%, and silver (Ag) accounts for 97.713%; Require that golden purity is greater than 99.99%, the purity of silver is greater than 99.9999%, the purity of palladium is greater than 99.999%, the purity of europium is greater than 99.9%, the purity of lanthanum is greater than 99.5%.
Its manufacturing process steps and method are as follows:
1. extract high purity silver: take No. 1 silver (IC-Ag99.99) in standard GB/T/T4135 as base material, the high purity silver that DNA purity is greater than 99.9999%, through cleaning, dry for standby.
2. be prepared into silver alloy ingot casting: prepare raw material by aforesaid bonding wire constituent percentage by weight; wherein gold (Au) shared percentage by weight is 1.1%; in high purity silver, add High Purity Gold, palladium, europium, lanthanum; these metals are put into high purity graphite crucible after mechanical mixture; under inert gas shielding condition, use sense answers heating by electric cooker to make its fusing, and then is prepared into silver alloy ingot casting.
3. continuous casting becomes as cast condition gold silver palladium alloy single crystal bus: the silver alloy ingot casting preparing is added and has the horizontal casting of nitrogen protection metal single crystal continuous casting chamber; after application Frequency Induction Heating, fusing, refining and degasification; liquation is injected to liquid storage tank insulation; complete the horizontal continuous casting of single crystal to gold and silver palldium alloy liquation, obtain about Φ 3mm, vertical and horizontal number of die is the as cast condition gold silver palladium alloy single crystal bus of 1.
4. slightly pull out: the golden silver palladium alloy single crystal bus of Φ 3mm left and right is drawn into the gold and silver palldium alloy monocrystalling wire that diameter is 1mm left and right.
5. heat treatment: the gold and silver palldium alloy monocrystalling wire that is 1mm left and right by diameter carries out annealing in process.
6. surface gold-plating: adopt conventional electroplating device and technique, to electroplating proof gold protection against oxidation layer through the gold and silver palldium alloy monocrystalling wire of heat treated 1mm left and right, require golden purity to be greater than 99.99%, current density 4.5A/dm when plating
2, take-up speed is 5m/min, and the THICKNESS CONTROL of surface gold-plating layer is at 1.5 μ m, and in the gold-plated gold and silver palldium alloy monocrystalling wire after gold-plated, the golden percentage that accounts for total weight is 2.2%.
7. essence is pulled out: will be drawn into (0.013mm-0.050mm) gold and silver palladium alloy monocrystal bonding wire of different size through the gold-plated gold and silver palldium alloy monocrystalling wire precision of annealing in process.
8. heat treatment: the gold-plated gold and silver palladium alloy monocrystal bonding wire after essence is pulled out carries out annealing in process.
9. surface clean: the gold-plated gold and silver palladium alloy monocrystal bonding wire after annealing in process is first cleaned in the acid solution after dilution, then through Ultrasonic Cleaning, then clean, dry through high purity water.
embodiment 3
The present invention realizes like this, a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire take high purity silver as material of main part, the material that forms this bonding wire is made up of the raw material of following percentage by weight: gold (Au) accounts for 2.0%, palladium (Pd) accounts for 0.06%, europium (Eu) accounts for 0.003%, lanthanum (La) accounts for 0.002%, and silver (Ag) accounts for 97.935%.Require that golden purity is greater than 99.99%, the purity of silver is greater than 99.9999%, the purity of palladium is greater than 99.999%, the purity of europium is greater than 99.9%, the purity of lanthanum is greater than 99.5%.
Its manufacturing process steps and method are as follows:
1. extract high purity silver: take No. 1 silver (IC-Ag99.99) in standard GB/T/T4135 as base material, the high purity silver that DNA purity is greater than 99.9999%, through cleaning, dry for standby.
2. be prepared into silver alloy ingot casting: prepare raw material by aforesaid bonding wire constituent percentage by weight; wherein gold (Au) shared percentage by weight is 1.0%; in high purity silver, add High Purity Gold, palladium, europium, lanthanum; these metals are put into high purity graphite crucible after mechanical mixture; under inert gas shielding condition, use sense answers heating by electric cooker to make its fusing, and then is prepared into silver alloy ingot casting.
3. continuous casting becomes as cast condition gold silver palladium alloy single crystal bus: the silver alloy ingot casting preparing is added and has the horizontal casting of nitrogen protection metal single crystal continuous casting chamber; after application Frequency Induction Heating, fusing, refining and degasification; liquation is injected to liquid storage tank insulation; complete the horizontal continuous casting of single crystal to gold and silver palldium alloy liquation, obtain about Φ 3mm, vertical and horizontal number of die is the as cast condition gold silver palladium alloy single crystal bus of 1.
4. slightly pull out: the golden silver palladium alloy single crystal bus of Φ 3mm left and right is drawn into the gold and silver palldium alloy monocrystalling wire that diameter is 1mm left and right.
5. heat treatment: the gold and silver palldium alloy monocrystalling wire that is 1mm left and right by diameter carries out annealing in process.
6. surface gold-plating: adopt conventional electroplating device and technique, to electroplating proof gold protection against oxidation layer through the gold and silver palldium alloy monocrystalling wire of heat treated 1mm left and right, require golden purity to be greater than 99.99%, current density 4A/dm when plating
2, take-up speed is 5m/min, and the THICKNESS CONTROL of surface gold-plating layer is at 1.3 μ m, and in the gold-plated gold and silver palldium alloy monocrystalling wire after gold-plated, the golden percentage that accounts for total weight is 2.0%.
7. essence is pulled out: will be drawn into (0.013mm-0.050mm) gold-plated gold and silver palladium alloy monocrystal bonding wire of different size through the gold-plated gold and silver palldium alloy monocrystalling wire precision of annealing in process.
8. heat treatment: the gold-plated gold and silver palladium alloy monocrystal bonding wire after essence is pulled out carries out annealing in process.
9. surface clean: the gold-plated gold and silver palladium alloy monocrystal bonding wire after annealing in process is first cleaned in the acid solution after dilution, then through Ultrasonic Cleaning, then clean, dry through high purity water.
Claims (5)
1. a gold-plated gold and silver palladium alloy monocrystal bonding wire, it is characterized in that the each composition percentage by weight of material that forms bonding wire is: gold (Au) accounts for 1.8%-2.2%, palladium (Pd) and accounts for that 0.04%-0.08%, europium (Eu) account for 0.002%-0.004%, lanthanum (La) accounts for 0.001%-0.003%, and silver (Ag) accounts for 97.713%-98.157%.
2. gold-plated gold and silver palladium alloy monocrystal bonding wire as claimed in claim 1, it is characterized in that in used material, the purity of gold is greater than 99.99%, the purity of silver is greater than 99.9999%, the purity of palladium is greater than 99.999%, the purity of europium is greater than 99.9%, the purity of lanthanum is greater than 99.5%.
3. a manufacture method for the gold-plated gold and silver palladium alloy monocrystal bonding wire described in claim 1 or 2, is characterized in that the processing step of its making and method are as follows:
1. extract high purity silver: the high purity silver that DNA purity is greater than 99.9999%, then through cleaning, dry for standby;
2. be prepared into silver alloy ingot casting: prepare material by following component content according to percentage by weight: gold accounts for 0.9%-1.1%, palladium and accounts for that 0.04%-0.08%, europium account for 0.002%-0.004%, lanthanum accounts for 0.001%-0.003%, silver accounts for 97.713-98.157%, these metals are put into high purity graphite crucible after mechanical mixture, under inert gas shielding condition, use sense answers heating by electric cooker to make its fusing, and then is prepared into silver alloy ingot casting;
3. continuous casting becomes as cast condition gold silver palladium alloy single crystal bus: the silver alloy ingot casting preparing is added and has the horizontal casting of nitrogen protection metal single crystal continuous casting chamber, after the fusing of application Frequency Induction Heating, refining and degasification, liquation is injected to liquid storage tank insulation, complete the horizontal continuous casting of single crystal to gold and silver palldium alloy liquation, obtain Φ 3mm left and right, vertical and horizontal number of die is the as cast condition gold silver palladium alloy single crystal bus of 1;
4. slightly pull out: the golden silver palladium alloy single crystal bus of Φ 3mm left and right is drawn into the gold and silver palldium alloy monocrystalling wire that diameter is 1mm left and right;
5. heat treatment: the gold and silver palldium alloy monocrystalling wire that is 1mm left and right by diameter is annealed;
6. surface gold-plating: gold and silver palldium alloy monocrystalling wire is after heat treatment electroplated to proof gold protective layer, plating is not less than 99.99% with golden purity requirement, the THICKNESS CONTROL of surface gold-plating layer is at 1 μ m-1.5 μ m, and in the gold-plated gold and silver palldium alloy monocrystalling wire after gold-plated, the golden percentage that accounts for total weight is 1.8%-2.2%;
7. essence is pulled out: the gold-plated gold and silver palldium alloy monocrystalling wire precision after gold-plated that is 1 about mm by diameter is drawn into diameter and is respectively the gold-plated gold and silver palladium alloy monocrystal bonding wire of 13 μ m-50 μ m;
8. heat treatment: the gold-plated gold and silver palladium alloy monocrystal bonding wire after essence is pulled out is annealed;
9. surface clean: first clean with the acid solution para-linkage silk after dilution, then through Ultrasonic Cleaning, then clean, dry through high purity water;
10. bundling: gold-plated finished product gold and silver palladium alloy monocrystal bonding wire is carried out to after-combustion, bundling, packing.
4. the manufacture method of wanting a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire as described in 3 as right, is characterized in that: extract when high purity silver take No. 1 silver in standard GB/T/T4135 as base material the high purity silver that DNA purity is greater than 99.9999% after electroplating.
5. the manufacture method of wanting a kind of gold-plated gold and silver palladium alloy monocrystal bonding wire as described in 3 as right, is characterized in that: current density when surface gold-plating (4-4.5) A/dm
2, take-up speed is (4-5) m/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024437.9A CN103779309A (en) | 2014-01-20 | 2014-01-20 | Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410024437.9A CN103779309A (en) | 2014-01-20 | 2014-01-20 | Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779309A true CN103779309A (en) | 2014-05-07 |
Family
ID=50571404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410024437.9A Pending CN103779309A (en) | 2014-01-20 | 2014-01-20 | Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779309A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996668A (en) * | 2014-05-30 | 2014-08-20 | 江西蓝微电子科技有限公司 | Silver-lanthanum-calcium alloy bonding wire and manufacturing method thereof |
| CN104022094A (en) * | 2014-05-30 | 2014-09-03 | 江西蓝微电子科技有限公司 | Silver europium alloy bonding wire and manufacturing method thereof |
| CN104593634A (en) * | 2014-12-31 | 2015-05-06 | 北京达博有色金属焊料有限责任公司 | Chemical gold/palladium-plated bonding silver alloy wire and preparation method thereof |
| CN105428335A (en) * | 2015-12-09 | 2016-03-23 | 北京达博有色金属焊料有限责任公司 | Bonding wire |
| CN107946271A (en) * | 2017-11-14 | 2018-04-20 | 汕头市骏码凯撒有限公司 | A kind of semiconductor-sealing-purpose silver alloy wire and its manufacture method |
| CN110648989A (en) * | 2019-10-11 | 2020-01-03 | 重庆新启派电子科技有限公司 | Bonding wire for chip ball planting |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154574A (en) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | Alloy wire for connecting semiconductor components |
| CN102437136A (en) * | 2011-11-16 | 2012-05-02 | 浙江佳博科技股份有限公司 | Bonding alloy wire and production technology thereof |
| JP2012169374A (en) * | 2011-02-10 | 2012-09-06 | Tanaka Electronics Ind Co Ltd | Ag-Au-Pd TERNARY ALLOY BASED BONDING WIRE |
| CN103199073A (en) * | 2013-03-14 | 2013-07-10 | 江西蓝微电子科技有限公司 | Silver palladium alloy monocrystal bonding wire and manufacturing method thereof |
-
2014
- 2014-01-20 CN CN201410024437.9A patent/CN103779309A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154574A (en) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | Alloy wire for connecting semiconductor components |
| JP2012169374A (en) * | 2011-02-10 | 2012-09-06 | Tanaka Electronics Ind Co Ltd | Ag-Au-Pd TERNARY ALLOY BASED BONDING WIRE |
| CN103155130A (en) * | 2011-02-10 | 2013-06-12 | 田中电子工业株式会社 | Ag-au-pd ternary alloy-based bonding wire |
| CN102437136A (en) * | 2011-11-16 | 2012-05-02 | 浙江佳博科技股份有限公司 | Bonding alloy wire and production technology thereof |
| CN103199073A (en) * | 2013-03-14 | 2013-07-10 | 江西蓝微电子科技有限公司 | Silver palladium alloy monocrystal bonding wire and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996668A (en) * | 2014-05-30 | 2014-08-20 | 江西蓝微电子科技有限公司 | Silver-lanthanum-calcium alloy bonding wire and manufacturing method thereof |
| CN104022094A (en) * | 2014-05-30 | 2014-09-03 | 江西蓝微电子科技有限公司 | Silver europium alloy bonding wire and manufacturing method thereof |
| CN104593634A (en) * | 2014-12-31 | 2015-05-06 | 北京达博有色金属焊料有限责任公司 | Chemical gold/palladium-plated bonding silver alloy wire and preparation method thereof |
| CN105428335A (en) * | 2015-12-09 | 2016-03-23 | 北京达博有色金属焊料有限责任公司 | Bonding wire |
| CN105428335B (en) * | 2015-12-09 | 2017-12-26 | 北京达博有色金属焊料有限责任公司 | A kind of bonding wire |
| CN107946271A (en) * | 2017-11-14 | 2018-04-20 | 汕头市骏码凯撒有限公司 | A kind of semiconductor-sealing-purpose silver alloy wire and its manufacture method |
| CN107946271B (en) * | 2017-11-14 | 2020-01-21 | 汕头市骏码凯撒有限公司 | Silver alloy wire for semiconductor packaging and manufacturing method thereof |
| CN110648989A (en) * | 2019-10-11 | 2020-01-03 | 重庆新启派电子科技有限公司 | Bonding wire for chip ball planting |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103779308A (en) | Gold-silver-palladium alloy single-crystal bonding wire and manufacturing method thereof | |
| CN103779309A (en) | Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof | |
| CN103199073B (en) | Silver palladium alloy single crystal bonding wire and manufacture method thereof | |
| CN103194637B (en) | Bonding alloy filamentary silver and preparation method thereof | |
| CN106992164B (en) | A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof | |
| CN104388861B (en) | A kind of polycrystalline series LED manufacture method of fine silver billon bonding line | |
| CN100421246C (en) | Bonded copper wire and preparing method thereof | |
| CN103474408B (en) | A kind of surface electrum bonding wire having Gold plated Layer and preparation method thereof | |
| CN104377185A (en) | Gold-plated palladium-silver alloy single crystal bonding wire and manufacturing method thereof | |
| CN101707194A (en) | Palladium-plated bonded copper wire and production method thereof | |
| CN102776408A (en) | Silver alloy wire and preparation method thereof | |
| CN102121077B (en) | Gold bonding wire and preparation method thereof | |
| CN106011516B (en) | One kind doping billon bonding wire and its subzero treatment preparation method | |
| CN101667566A (en) | Gold-coated-sliver base bonding silk thread and manufacture method thereof | |
| CN104835797B (en) | A kind of copper palladium-silver bonding wire and preparation method thereof | |
| CN107799496A (en) | A kind of high reliability copper alloy bonding wire used for electronic packaging and preparation method thereof | |
| CN102226991A (en) | Copper palladium alloy monocrystal bonding wire and manufacturing method thereof | |
| CN109767991B (en) | Preparation method of high-gold-alloy bonding wire | |
| CN104372197A (en) | Silver alloy wire for semiconductor packaging, and its making method | |
| CN109449133A (en) | A kind of copper plating pure nickel bonding wire and preparation method thereof | |
| CN102361026A (en) | Copper-based bonding wire with anti-oxidation function | |
| CN103219246A (en) | Manufacturing method of palladium-plated silver-plated double-plating bonding copper wire | |
| CN103996668A (en) | Silver-lanthanum-calcium alloy bonding wire and manufacturing method thereof | |
| CN104022095A (en) | Gold-plated silver lanthanum calcium alloy bonding wire and manufacture method thereof | |
| CN103199072A (en) | Gold-plated palladium-copper single-crystal bonding wire and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140507 |
|
| RJ01 | Rejection of invention patent application after publication |