CN103155130A - Ag-au-pd ternary alloy-based bonding wire - Google Patents

Ag-au-pd ternary alloy-based bonding wire Download PDF

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CN103155130A
CN103155130A CN2011800490005A CN201180049000A CN103155130A CN 103155130 A CN103155130 A CN 103155130A CN 2011800490005 A CN2011800490005 A CN 2011800490005A CN 201180049000 A CN201180049000 A CN 201180049000A CN 103155130 A CN103155130 A CN 103155130A
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quality
partalloy
ternary alloy
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CN103155130B (en
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千叶淳
手岛聪
小林佑
安德优希
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01063—Europium [Eu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds

Abstract

The purpose of the invention is to improve the reliability at which a bonding wire for semiconductors that is used in high-temperature and high-humidity environments is bonded to an aluminum pad. The solution is that a ternary-alloy-based wire comprising 4-10 mass% of gold having a purity equal to or greater than 99.999 mass%, and 2-5 mass% of palladium having a purity equal to or greater than 99.99 mass%, the remainder being constituted by silver having a purity equal to or greater than 99.999 mass%. The bonding wire for semiconductors contains 15-70 wt ppm of an oxidizing non-noble metal j element, and is subjected to an annealing heat treatment before being continuously drawn using a die, to a refining heat treatment after being continuously drawn using a die, and to ball-bonding in a nitrogen atmosphere. Corrosion between an Ag2Al intermetallic compound layer and the Ag-Au-Pd ternary alloy wire at the bonding interface between an aluminum pad and the wire is inhibited by Au2Al and a Pd-rich layer.

Description

Ag-Au-Pd ternary alloy three-partalloy closing line
Technical field
The present invention relates to a kind of closing line of being made by the Ag-Au-Pd ternary alloy three-partalloy, described closing line is suitable for the substrate that will use in semiconductor device such as IC chip electrode and draws lead-in wire with the outside and be connected, and especially relate to a kind of Ag-Au-Pd ternary alloy three-partalloy closing line, described closing line is under hot conditions as use in motor vehicles or in speeder.
Background technology
Traditionally, as in semiconductor device, the IC chip electrode being connected to the gold thread that lead-in wire is drawn in the outside, because the reason of high reliability is widely used the gold thread with the purity more than 99.99 quality % of being made by the High Purity Gold of making doped with the another kind of metallic element of trace.The use of this proof gold line is to make an end of line by adopting ultrasonic wave auxiliary heat bonding method to be connected to fine aluminium (Al) solder joint or aluminium alloy solder joint on the IC chip electrode, and the other end is connected to the outside lead on circuit board etc., and thereafter with resin-sealed circuit to make semiconductor device.Such fine aluminium (Al) solder joint and aluminium alloy solder joint form by vacuum moulding machine usually.
Another kind of Ag-Au-Pd ternary alloy three-partalloy closing line " a kind of gold alloy wire for bonding for semiconductor device; it is characterized in that being comprised of the following: the Ag of 10-60 % by weight and the Mn of 0.005-0.8%; add and being selected from least a element in Cu, Pd and Pt and amounting at least a element in Ca, Be, La, Ce and Y of being selected from of 0.0002-0.03 % by weight of the total 0.005-5 % by weight of above element combinations, and surplus is gold and inevitable impurity is disclosed in Japan patent applicant announce H09-272931.”
Equally, Japan patent applicant announce 2000-150562 discloses " a kind of gold alloy wire for bonding for the bonding semiconductor device; described gold alloy wire for bonding is made by the billon that contains the following: the Pb of the Ag of 1 to 50 % by weight, 0.8 to 5 % by weight, the Ti of 0.1-2 ppm by weight; add one or more in Ca, Be and La of being selected from of 1-50 ppm by weight, and by gold and the inevitable remainder that forms of impurity.Exploitation is alternative as gold thread as these closing line, and expection can reduce the consumption of expensive gold (Au) and can form in atmospheric environment and melts ball.”
Yet, in the situation that by the closing line that has the Ag-Au-Pd alloy that surpasses 60% silver (Ag) content and make, existing experience be when with it in natural atmosphere during ball bonding, some oxides are separated out in the surface of molten ball, cause the bonding of molten ball and target such as aluminium alloy solder joint bad.These oxides derive from the oxidizability base metal element that contains in natural A g or inevitable impurity, and the element that adds when this trace and when inevitably impurity is separated out on the surface of melting ball, and their oxygen in atmosphere is combined and is generated oxide.
When the content of silver surpassed 60%, the hardness of closing line self became and increases a lot, became common convention to such an extent as to the closing line after being shaped is carried out final annealing.for example, disclose " by the Ag-Pd alloy in Japan patent applicant announce H03-74851 (hereinafter referred to " IP announces 1 "), the line that Au-Ag-Pd alloy etc. is made, described line has carried out heat treatment at the temperature higher than separately recrystallization temperature ", and Japan patent applicant announce 2010-171378 discloses a kind of method of the line for the manufacture of being made by gold-silver-palladium alloy, surface and ensuing annealing by cleaning and drying line form, described line and drawing are the linear diameter of 0.050mm-0.010mm, and the gold and the silver of 66.00-90.00 % by weight and the palladium of 0.01-6.00 % by weight that contain the 8.00-30.00 % by weight, described method comprises cleaning and drying line surface and annealing afterwards.
Yet, in the situation that the closing line of being made by the Ag-Au-Pd ternary alloy three-partalloy, the fact that exists is that the content of silver (Ag) is larger, the oxygen of introducing from air is more, so that the surface tension change is very weak, so that the shape of molten ball becomes unstable, and also brings separating out of above-mentioned oxide, only may obtain to connect by the mode that ultrasonic wave is wedged bonding.
Because although resin-sealed semiconductor device begins for the car-mounted device IC that still needs high reliability under the harsh conditions of wherein rising temperature, and being the very high IC and the high-brightness LED that are used for high frequency waves for the working temperature rising, the closing line of being made by the Ag-Au-Pd ternary alloy three-partalloy of having completed final annealing can not keep their performance under such hot conditions.Closing line does not also come into operation because these reasons, the fact are the Ag-Au-Pd ternary alloy three-partalloy.
Prior art is announced
[IP announces 1] Japan patent applicant announce H03-74851
[IP announces 2] Japan patent applicant announce H09-272931
[IP announces 3] Japan patent applicant announce 2000-150562
Summary of the invention
The problem to be solved in the present invention
Consider the closing line that a kind of Ag-Au-Pd ternary alloy three-partalloy will be provided and the present invention is provided, described closing line can be set up lasting ball bonding with the aluminium solder joint and be connected, and even still can keep connection reliability when harsh condition of work that the resin-sealed semiconductor device that uses therein described line will bear high temperature, high humidity and high pressure.
The mode of dealing with problems
The present inventor focuses on not the same with the closing line that contains copper (Cu) the easy fact that is subject to oxidation of the closing line of being made by the Ag-Au-Pd ternary alloy three-partalloy with their attentiveness, studied with the former under hot conditions in the nitrogen atmosphere connection persistence of ball bonding on the aluminium alloy solder joint.They find that they can obtain the free air balls (FAB) of high sphericity under air atmosphere, described free air balls is but not sealing fully under the nitrogen atmosphere, and even do not need to use the gaseous mixture of nitrogen and hydrogen, and it is just enough even to purge nitrogen in the process that forms molten ball.
The present inventor also is added to the oxidizability base metal element of trace in high-purity Ag-Au-Pd ternary alloy three-partalloy, and by dispersing additive equably in alloy, they stop coarse grains in the Ag-Au-Pd ternary alloy three-partalloy by annealing in process, be designed to still can to keep after closing line is continuously elongated by mould the stretching structure in closing line, described annealing in process is applied to line to eliminate moulding stress in stretching
in order to address the above problem, Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device of the present invention is by the silver (Ag) with the purity more than 99.99 quality %, the palladium (Pd) that has the gold (Au) of the above purity of 99.999 quality % and have the purity more than 99.99 quality % is made, and this ternary alloy three-partalloy closing line is by the gold (Au) of 4-10 quality %, the oxidizability base metal element of the palladium of 2-5 quality % and 20-100 quality ppm adds that the silver (Ag) of surplus forms, and this closing line had carried out thermal annealing before continuously elongated by mould, and carried out hot tempering after continuously elongated by mould, and be suitable for ball bonding in the nitrogen atmosphere.
(Ag-Au-Pd ternary alloy three-partalloy)
Ag-Au-Pd ternary alloy three-partalloy of the present invention is that the palladium (Pd) by the gold (Au) of 4-10 quality %, 2-5 quality % is added the alloy that solid solution that the silver (Ag) of surplus forms is made after fully homogenizing.
In situation of the present invention, the content of silver (Ag) is for being no less than 84 quality %, this is because find when containing silver alloy wire and be bonded on fine aluminium (Al) solder joint or aluminium alloy solder joint in the nitrogen atmosphere, the intermetallic compound that forms when seldom bonding in clean atmosphere of formation between silver (Ag) and aluminium (Al).
About the present invention, gold (Au) does not participate in having the formation of intermetallic compound in the nitrogen atmosphere of aluminium (Al), and have when bonding for the first time make will molten ball height circular compression effect.Why the present invention stipulates that the content of gold (Au) is that the reason of 4-10 quality % is: if gold surpasses 10 quality %, Tai Gao oxidizability base metal element oxide becomes and is easy to form to such an extent as to the temperature of molten ball when forming becomes, the acquisition of the FAB of high sphericity becomes difficult thus, and on the other hand, if less than 4 quality %, the sphericity of too unstable very difficult assurance FAB to such an extent as to molten ball becomes.Gold (Au) content is preferably 6-9 quality %.
In the present invention, the palladium deteriorated effect that has the formation that stops intermetallic compound between silver (Ag) and aluminium (Al) and suppress the intermetallic compound between silver-colored (Ag) and aluminium (Al) when use semiconductor device under the condition of high temperature and high humility.
In the situation that traditional Ag line forms intermetallic compound Ag across the bonded interface between these elements 2Al.
Ag 2Thereby the bonded interface between Al and ball is corroded in moisture environment and generates Ag and Ag 2O 3
In the situation that add by Ag-Au-Pd of the present invention the line that the interpolation element of trace is made, at Ag 2Form Ag between Al and ball 2The rich Pd layer of Al and one deck, thus Ag suppressed 2The corrosion of Al.
As shown in the conceptual scheme of Fig. 1, in the situation that the Ag line forms intermetallic compound Ag across the bonded interface between ball and aluminium solder joint 2Al, and easily be corroded [referring to (A) of Fig. 1] in aqueous environment.
In contrast, as shown in Fig. 1 (A), in the situation that Ag-Au-Pd line of the present invention, although form similarly intermetallic compound Ag across the bonded interface between ball and aluminium solder joint 2Al is to such an extent as to but Au and Pd are too compatible each other forms Au on the sphere side 2Al and rich Pb layer, thereby deceleration Corrosion of Al, the result of bringing are greatly to have improved shear strength (share strength) and HST reliability.
Why stipulate that palladium (Pd) is that the reason of 2-5 quality % is: if it surpasses 5 quality %, form molten ball and become too hard under the nitrogen atmosphere, and if less than 2 quality %, can not guarantee to suppress the deteriorated effect of the intermetallic compound between silver (Ag) and aluminium (Al).Preferably palladium (Pd) content is 3-5 quality %.
(the oxidizability base metal adds element)
In the present invention, the dosage of oxidizability base metal interpolation element is 15-70 quality ppm.According to the present invention, requiring the purity of silver (Ag) is more than 99.99 quality %, and inevitable impurity basically content be about 20ppm.These inevitable impurity and oxidizability base metal add that element is the same to be evenly dispersed in the Ag-Au-Pd ternary alloy three-partalloy, and by their the magnetic flux nail effect of holes, they fulfil the task of their prevention Ag-Au-Pd ternary alloy three-partalloy coarse grains.The Main Function that the oxidizability base metal adds element is to improve the mechanical performance of line and the circularity of compressed ball when bonding for the first time.
If the oxidizability base metal adds the total amount of element in mass below 70ppm, even when the Ag-Au-Pd ternary alloy three-partalloy is annealed, also only can will change a small amount of appearance of the formation of thick oxide films of alloy surface color in the alloy surface appearance so in atmosphere.Preferably the total amount of oxidizability base metal element is 20-60 quality ppm, and more preferably 20-50 quality ppm.
It can be calcium (Ca), rare earth element (Y, La, Ce, Eu, Gd, Nd and Sm), beryllium (Be), magnesium (Mg), tin (Sn), indium (In) and bismuth (Bi) that the oxidizability base metal adds element.Preferred candidate is calcium (Ca) and rare earth element, particularly lanthanum (La) and beryllium (Be).
(annealing in process)
Annealing in process according to the present invention is designed to eliminate the moulding stress that the bracing wire of Au-Ag-Pd ternary alloy three-partalloy brings, thereby and prevents the crackle that caused by stress.What need is that oxidizability base metal additive height is evenly dispersed in the Ag-Au-Pd ternary alloy three-partalloy, in order to the heat treated temperature of system can be elevated to (approximately 1000 degrees centigrade) near the fusing point of Ag-Au-Pd ternary alloy three-partalloy.Usually, heat treatment is roughly to keep 2 hours at 500 degrees centigrade, keeps 30 minutes or keeps 10 minutes at 700 degrees centigrade at 600 degrees centigrade.When after annealing, alloy being pulled into line, can form stretching structure in closing line.Therefore, expectation is to carry out annealing in process final before continuously elongated.Simultaneously, if repeat annealing in process, it is finer and close that the stretching structure of closing line will become, thus preferably carry out twice or repeatedly annealing, but this reduces productivity ratio, so be best twice or three times.
(heat refining heat treatment)
Heat refining heat treatment according to the present invention be designed to in the situation that gold thread is similar, change line in a certain way so that when line is elongated 4%, it is snapped by the tensile break strength testing machine, and this control by the temperature in tube furnace and pull wire speed realizes.Usually adopt about 500 degrees centigrade and 2 seconds.
The invention effect
As mentioned above, in the nitrogen atmosphere, Ag-Au-Pd alloy bond line of the present invention is used for bonding for the first time, so that the bonding of the molten ball on fine aluminium (Al) and aluminium alloy solder joint is good, and also can guarantee the circularity of compressed ball, even and when semiconductor device is used in high temperature and high humidity environment, the intermetallic compound of aluminium (Al) the bonded interface of the first bonding will be not can thickization, thereby guaranteed high bonding reliability.In addition, the closing line made from Ag-Au-Pd of the present invention is that machinery is fragile, so that inclination and irregularities in the bank height do not occur, and has reduced by the irregularities on bond strength in the second bonding process of controlling supersonic bonding.
Invention embodiment
Cast by melting and prepare the Ag-Au-Pd alloy that the element shown in the left one side of something with table 1 forms, and the line of 10mm diameter is elongated to the 3mm diameter and in 600 degrees centigrade of insulations annealing in 30 minutes, and next line elongated the 0.1mm diameter and annealed 30 minutes at 600 degrees centigrade.After this, continuously elongated by carrying out final wet type, the inventor has prepared the closing line 1-27 (hereinafter referred to the invention line) of 20 micron thickness of being made by Ag-Au-Pd alloy according to the present invention and the closing line 28-36 (hereinafter referred to alternative line) that makes with the Ag-Au-Pd alloy that exceeds compositing range of the present invention.these invention line 1-27 and alternative line 28-36 are placed in by Kulicke﹠amp, lead bonding apparatus (the trade name: Max μ m Ultra) that Soffa makes, and be bonded in purging the atmosphere of nitrogen on the Al alloy solder joint that the Cu that is added 0.5 quality % by Al of 50 square millimeters in being arranged on the semiconducter IC chip makes, wherein make the FAB of the large target size of 38mm, operating condition during bonding is: heating-up temperature is 200 degrees centigrade, bank length is 5mm, the bank height is 220mm, the diameter of compressed ball is that the height of 48mm and compressed ball is 14mm, and about the FAB sphericity, the compressed ball circularity, the first ball shearing force and HAST reliability are estimated.
[evaluation method of FAB sphericity]
By the line bonder in the situation that 100 FAB of the alloy of each composition preparation, and measure each FAB directions X (perpendicular to metal wire vertically) and Y-direction (metal wire vertically) on length, and the difference between these length is the basis of evaluation.The result of estimating provides at right one side of something of table 1.
[evaluation method of compressed ball circularity]
Carry out the bonding of 100 times about the alloy of each composition on the IC chip that is used for the evaluation preparation, and measured the length of each compressed ball on directions X (direction of pointing to perpendicular to ultrasonic wave) and Y-direction (direction that ultrasonic wave points to), the erratic behavior of the ratio between these length is the basis of estimating, and result provides in right one side of something of table 1.
[evaluation method of the first ball shearing force]
For each alloying component, mode by the line bonder is being carried out bonding 100 times on the IC chip of the special preparation of this purpose, and the name of product by Dage Corporation " omnipotent bonding test instrument (BT) (model: 4000) " is estimated the shear strength of each the first compressed ball.The result of estimating provides in right one side of something of table 1.
[evaluation method of HAST reliability]
For each alloying component, mode by the line bonder is closed at the enterprising line unit of IC chip (200 pin) for the special preparation of this purpose, and seal this chip with the plastic resin for the special preparation of this purpose, thereby complete the sample for resistance test.Each sample is placed in height accelerated life test (HAST) 192 hours under the condition of the temperature of 130 degrees centigrade, 85% humidity and 2.2 atmospheric pressure, has then measured resistance.The measurement of resistance is being the carrying out in the automatic measuring system of the special structure of this purpose by the name of product " source table (model 2004) " of KEITHLEYCORPORATION by means of the IC jack that is the special preparation of this purpose.The mode of measuring is according to so-called direct current four-terminal method.Make constant current flow to adjacent outside lead probe (selecting a butt welding point short circuit on chip) from the probe that is used for measuring, and the voltage between measuring probe.
About 100 outside leads to (200 pin), before keeping and carry out afterwards the measurement of resistance, and estimate the voltage rate of rise in HAST.The result of this evaluation provides in right one side of something of table 1.
[table 1]
Figure BDA00003031112500081
Figure BDA00003031112500091
In right one side of something of table 1, about the FAB sphericity, the difference that symbol ◎ means to observe is below 1 micron, and zero difference that means to observe is below 2 microns, and the difference that △ means to observe is greater than 2 microns.
In right one side of something of table 1, about annular degree stability, symbol ◎ means the value of standard deviation less than 0.8 micron, zero to mean standard deviation value be more than 0.8 micron and less than 1.0 microns, it is more than 1.0 microns and less than 1.5 microns that △ means standard deviation value, and * to mean standard deviation value be more than 1.5 microns.
In right one side of something of table 1, about the first ball shearing force, it is more than 15gf that symbol ◎ means shear load, and zero to mean shear load be more than 12gf, it is more than 10gf that △ means shear load, and * mean shear load or cut off less than 10gf or described ball.
In right one side of something of table 1, about the HAST reliability, symbol ◎ means the growth rate of resistance value, and namely increment divided by the resistance value that is placed in before HAST, is below 20%, and zero to mean it be below 50%, and * mean it greater than 50%.
Can be clear that from the result shown in one side of something of table 1, line of the present invention is outstanding on the bonding of the annular degree of molten ball sphericity, compressed ball, the first ball and HAST reliability, and each line in comparative example 25-31 all has a kind of performance inconsistency lattice of testing at least.
Industrial applicibility
Closing line of the present invention is used at high temperature and high humidity environment uses and hope is more cheap this IC assembly, and as, and these IC assemblies such as lamination IC and the low-k IC that are not easy to use the Cu closing line, perhaps due to vehicle-mounted high-brightness LED semiconductor equipment.
Summary of drawings
[Fig. 1] Fig. 1 is by the schematic diagram (A) that shows the bonded interface between Ag-Au-Pd ternary alloy three-partalloy line and aluminium solder joint and show that the schematic diagram (B) of the bonded interface between Ag line and aluminium solder joint forms.

Claims (7)

1. Ag-Au-Pd ternary alloy three-partalloy closing line that is used for semiconductor device, described closing line is by the silver (Ag) with the purity more than 99.99 quality %, the palladium (Pd) that has the gold (Au) of the above purity of 99.999 quality % and have the purity more than 99.99 quality % is made, described line is by the described gold (Au) of 4-10 quality %, the described palladium (Pd) of 2-5 quality %, the described silver (Ag) of the oxidizability base metal element of 15-70 quality ppm and surplus % forms, and described line by mould continuously elongated before by thermal annealing at least one times, and described line after continuously elongated by described mould by hot tempering, and described line is applicable to ball bonding in the nitrogen atmosphere.
2. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1, is characterized in that described line contains the described gold (Au) of 6-9 quality % and the described palladium (Pd) of 3-5 quality %.
3. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1, is characterized in that described oxidizability base metal element comprises calcium (Ca).
4. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1, is characterized in that described oxidizability base metal element comprises rare earth element.
5. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1, is characterized in that described oxidizability base metal element comprises lanthanum (La).
6. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1 is characterized in that described line is by thermal annealing more than twice.
7. the Ag-Au-Pd ternary alloy three-partalloy closing line for semiconductor device as claimed in claim 1, is characterized in that described thermal annealing carries out in the temperature higher than the temperature of carrying out described hot tempering.
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US20120263624A1 (en) 2012-10-18
TWI428455B (en) 2014-03-01

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