JPH01162343A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPH01162343A JPH01162343A JP62322076A JP32207687A JPH01162343A JP H01162343 A JPH01162343 A JP H01162343A JP 62322076 A JP62322076 A JP 62322076A JP 32207687 A JP32207687 A JP 32207687A JP H01162343 A JPH01162343 A JP H01162343A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- added
- wire
- amount
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011162 core material Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 11
- 238000001953 recrystallisation Methods 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000032683 aging Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000005491 wire drawing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、Ag製の半導体装置用ボンディングワイヤ、
あるいはAgからなる芯材にAuからなる被覆材を被覆
してなる半導体装置用ボンディングワイヤに関し、特に
ポンディング後の実装状態においてAgの時効軟化を抑
制して機械的特性を向上でき、かつボール硬さを安定で
きるようにしたボンディングワイヤに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides bonding wires for semiconductor devices made of Ag;
Alternatively, regarding a bonding wire for a semiconductor device in which a core material made of Ag is coated with a covering material made of Au, the aging softening of Ag can be suppressed and the mechanical properties can be improved, especially in the mounted state after bonding, and the ball hardness can be improved. This invention relates to a bonding wire that can stabilize the temperature.
半導体素子のチップ電極であるA1蒸着パッドを外部リ
ードに連なるリードフレーム、あるいはケースに接続す
るにあたっては、従来からボンディングワイヤが使用さ
れている。そしてこのボンディングワイヤを上記蒸着バ
ンドに接続する方法としては、該ワイヤの先端をアーク
放電等で加熱して溶融させてポールを形成し、このボー
ルを上記蒸着パッドに圧着する熱圧着ポンディング法と
、該熱圧着ボンディング法に超音波振動を併用するサー
モソニックポンディング方法(以下、両方法をポールボ
ンディング法と称す)が採用されている。Bonding wires have conventionally been used to connect A1 vapor deposition pads, which are chip electrodes of semiconductor elements, to lead frames connected to external leads or to cases. The method of connecting this bonding wire to the vapor deposition band includes a thermocompression bonding method in which the tip of the wire is heated by arc discharge or the like to melt it to form a pole, and this ball is pressed to the vapor deposition pad. , a thermosonic bonding method (hereinafter both methods will be referred to as pole bonding method) that uses ultrasonic vibration in combination with the thermocompression bonding method has been adopted.
このようなポールボンディング法に採用されるボンディ
ングワイヤとして、高純度Ag線を採用した技術は多数
の文献、特許公報等に発表されている。その−例として
、特開昭56−169341号公報に記載されたものが
あり、この公報では、Ag線の純度を99.97wt%
以トにすることが提案されている。Techniques using high-purity Ag wires as bonding wires used in such pole bonding methods have been published in numerous documents, patent publications, and the like. An example of this is the one described in Japanese Patent Application Laid-open No. 169341/1983, which states that the purity of the Ag line is 99.97wt%.
It is proposed to do as follows.
一方、Agは、溶融状態で容易に酸化し、またAg自身
マイグレーションを起こし易いことがら、使用条件によ
っては単独ではボンディングワイヤとしての信頼性に劣
る場合がある。そこで、ト記Agの酸化、マイグレーシ
ョンの問題を解消できるボンディングワイヤとして、例
えば、特開昭56−21354号公報に開示されたもの
がある。これは、純度99.99w10以上の高純度A
gからなる芯材の外周を、純度99.99w10以りの
高純度A uからなる被覆材で被覆した複合ボンディン
グワイヤである。On the other hand, Ag is easily oxidized in a molten state, and Ag itself tends to undergo migration, so depending on the usage conditions, the reliability as a bonding wire may be poor when used alone. Therefore, as a bonding wire capable of solving the problems of oxidation and migration of Ag, for example, there is a bonding wire disclosed in Japanese Patent Laid-Open No. 56-21354. This is a high purity A with a purity of 99.99w10 or higher.
This is a composite bonding wire in which the outer periphery of a core material made of g is coated with a coating material made of high purity Au with a purity of 99.99W10 or higher.
このワイヤによれば、接合性を■害する酸化を防止でき
、かつマイグレーションの発生を回避できる。According to this wire, it is possible to prevent oxidation that impairs bonding properties, and also to avoid the occurrence of migration.
ところが、−船釣に高純度のAgは、軟化点が低く、常
温でも時効軟化を起こし易いことが知られており、その
結果ボンディングワイヤとして要求される諸条件のうち
、特に引張強度の機械的性質が時間の経過とともに満た
されなくなるという問題がある。この点は、上記Ag−
Auの複合ボンディングワイヤにおいても同様であり、
Agの時効軟化により該ワイヤ全体の強度が低下するこ
とになる。However, it is known that high-purity Ag for boat fishing has a low softening point and is susceptible to aging softening even at room temperature. The problem is that the properties become unfulfilled over time. This point is important for the above Ag-
The same applies to Au composite bonding wires,
The strength of the entire wire decreases due to aging softening of Ag.
そこで、本件発明者らは、−上記高純度Agの時効軟化
を抑制して機械的性質を向上できるようにしたボンディ
ングワイヤを開発した(特願昭62−173509号)
。これは、Ag芯材に、C11等の特定元素を所定量添
加してなるものである。このボンディングワイヤによれ
ば、再結晶温度を向−ヒさせるCu等の特定元素を添加
したので、芯材の時効軟化を抑制でき、それだけ機械的
性質を向上できる。ところが、上記Cu等の元素を含有
するボンディングワイヤについて、さらに検討を行った
ところ、−ト記Cu等の元素添加量が多ずぎた場合に、
若干ボール硬さにおいて信頼性に劣ることが判明した。Therefore, the inventors of the present invention have developed a bonding wire that suppresses aging softening of the above-mentioned high-purity Ag and improves mechanical properties (Japanese Patent Application No. 173509/1982).
. This is made by adding a predetermined amount of a specific element such as C11 to an Ag core material. According to this bonding wire, since a specific element such as Cu that increases the recrystallization temperature is added, aging softening of the core material can be suppressed, and the mechanical properties can be improved accordingly. However, when we further investigated the bonding wire containing elements such as Cu mentioned above, we found that if the amount of added elements such as Cu is too large,
It was found that reliability was slightly inferior in terms of ball hardness.
そこで本発明の目的は、半導体装置用ボンディングワイ
ヤにおいて、高純度Agの時効軟化を抑制でき、かつポ
ール硬さを維持できる添加元素の種類及びその添加量を
規定することにある。Therefore, an object of the present invention is to specify the types and amounts of additive elements that can suppress aging softening of high-purity Ag and maintain pole hardness in bonding wires for semiconductor devices.
本願第1発明は、高純度Agに、0.0005〜0.0
2重量%のCaを添加することを特徴としたボンディン
グワイヤであり、また第2発明は、高純度Ag芯材の外
周を高純度Au被覆材で被覆したボンディングワイヤに
おいて、上記芯材に、o、ooos〜0.02重量%の
Caを添加したことを特徴としている。The first invention of the present application provides high purity Ag with 0.0005 to 0.0
A bonding wire characterized by adding 2% by weight of Ca, and a second invention is a bonding wire in which the outer periphery of a high-purity Ag core material is coated with a high-purity Au coating material, in which the core material contains o , ooos~0.02% by weight of Ca is added.
ここで、上記Caの添加量を規制した理由について説明
する。上記Caの添加量が0.0005重量%以下では
、微量すぎて当初の目的である時効軟化抑制効果が達成
できない。また、0.02重量%を超えると、該添加量
に見合った再結晶温度の高揚。Here, the reason why the amount of Ca added is regulated will be explained. If the amount of Ca added is 0.0005% by weight or less, the amount is too small to achieve the original objective of suppressing aging softening. Moreover, if it exceeds 0.02% by weight, the recrystallization temperature increases commensurate with the amount added.
引張強度の向上を得ることができなくなるばかりか、芯
材が脆くなり、加工性が低下する。さらに、ポール成形
時に該ポールの形状が真球から外れていびつになったり
、ボール硬化が著しくなり蒸着パッドの破損等が生じ、
本発明の目的とするボール硬さを確保できなくなること
から、上記Caの添加量の上限は0.02重量%とじた
。Not only is it impossible to obtain an improvement in tensile strength, but the core material becomes brittle and workability is reduced. Furthermore, during pole molding, the shape of the pole may deviate from a true sphere and become distorted, or the ball may harden significantly, causing damage to the vapor deposition pad.
Since the ball hardness targeted by the present invention could not be ensured, the upper limit of the amount of Ca added was set at 0.02% by weight.
本発明に係るボンディングワイヤによれば、高純度Ag
に0.0005〜0.02重量%のCaを添加するよう
にしたので、芯材の再結晶温度が高揚し、時効軟化を抑
制して高い引張強度を保持でき、機械的性質を向上でき
る。また、Caの添加量の上限を規制したので、ボンデ
ィング時に形成されるボールが十分に軟らかく、かつ真
球に近いものとなり、その結果Siチップの破損を防止
でき、ボンディング作業の信頼性を向上できる。According to the bonding wire according to the present invention, high purity Ag
Since 0.0005 to 0.02% by weight of Ca is added to the core material, the recrystallization temperature of the core material increases, aging softening can be suppressed, high tensile strength can be maintained, and mechanical properties can be improved. In addition, since the upper limit of the amount of Ca added is regulated, the ball formed during bonding is sufficiently soft and close to a true sphere, which prevents damage to the Si chip and improves the reliability of bonding work. .
以下、本発明のボンディングワイヤの効果を明確にする
ための具体的実施例について説明する。Hereinafter, specific examples will be described to clarify the effects of the bonding wire of the present invention.
まず本願第1発明の実施例について説明する。First, an embodiment of the first invention of the present application will be described.
本実施例では、Ag線に対するCaの添加量の変化によ
る特性を得るために、高純度Ag(99゜999w10
)にそれぞれ第1表のM1〜7に示す量のCaを添加し
、これから20φのビレットを作成した。次に各ビレッ
トを伸線加工機により25μmφに伸線加工し、この時
の伸線性(製品10km当たりの断線数)を調べた。さ
らに、上記加工直後のワイヤ、該加工後108.30日
間常温状態に保持したワイヤ、及び30日経過後250
℃のシリコンオイル中にfat消したワイヤのそれぞれ
について引張強度を測定した。In this example, high purity Ag (99°999w10
) was added with Ca in the amount shown in M1 to M7 in Table 1, respectively, and a billet of 20φ was made from it. Next, each billet was wire-drawn to a diameter of 25 μm using a wire-drawing machine, and the wire drawability (number of wire breaks per 10 km of product) was examined. Furthermore, the wire immediately after the above processing, the wire maintained at room temperature for 108.30 days after the processing, and the wire maintained at room temperature for 108.30 days after the processing, and
Tensile strength was measured for each of the wires fat-extinguished in silicone oil at 10°C.
第1表はその試験結果を示し、同表からも明らかなよう
に、伸線性の評価では、Caの添加量が300PPM
(No、 7 )を超えると断線数が増大するが、これ
以下(No、1〜5)では全く生じていない。また、上
記添加量が3PPM (No、1)では、伸線直後か
ら10日、30日経過するにつれ引張強度は著しく低下
しており、時効軟化抑制効果が得られていない。一方、
Ca含有量が5 PPFI以、ヒ(lIk12〜7)に
なると添加量が増大する程、伸線直後、10日、30日
経過後、250°C処理後においても引張強度が向上し
ており、時効軟化抑制効果が得られていることがわかる
。従って、伸線性1時効軟化抑制の両者を満足するため
には、Caの添加量を5〜200 PPMの範囲内にす
るのが妥当である。Table 1 shows the test results, and as is clear from the table, in the wire drawability evaluation, the amount of Ca added was 300 PPM.
When the number exceeds (No. 7), the number of disconnections increases, but below this (No. 1 to 5), no breakage occurs at all. Moreover, when the above-mentioned addition amount was 3 PPM (No. 1), the tensile strength decreased significantly as 10 and 30 days passed from immediately after wire drawing, and the effect of suppressing aging softening was not obtained. on the other hand,
When the Ca content is 5 PPFI or higher, the tensile strength increases as the addition amount increases, even after wire drawing, after 10 days, after 30 days, and after treatment at 250 °C, and the aging It can be seen that the softening suppressing effect was obtained. Therefore, in order to satisfy both the requirements of wire drawability and suppression of aging softening, it is appropriate that the amount of Ca added be within the range of 5 to 200 PPM.
次に、上記伸線加工したAg線をポールボンディング法
によって、ポンディングを行いボール形状、ボールの圧
着時の硬さを測定した。ここで、上記ポンディング条件
としては、アーク放電(ワイヤ陽極)を一定とし、ボー
ル成形時及びポンディング時は、酸素濃度が50PPM
以下になるように雰囲気制御した。そして、上記各測定
におけるサンプル数は50個とし、ボール形状は50個
中いびつになった個数、ボール硬さはSiウェハーに1
μmのAβ−3iを蒸着したものに50回ボンディング
を行い、該S1ウエハーに生じたクラックの発生数を求
めた。Next, the drawn Ag wire was bonded using a pole bonding method, and the shape of the ball and the hardness of the ball when it was crimped were measured. Here, as the above bonding conditions, the arc discharge (wire anode) is constant, and the oxygen concentration is 50 PPM during ball forming and bonding.
The atmosphere was controlled to be as follows. The number of samples in each of the above measurements was 50, and the number of balls out of 50 was distorted, and the ball hardness was 1.
Bonding was performed 50 times to the wafer on which μm of Aβ-3i was deposited, and the number of cracks that occurred in the S1 wafer was determined.
その結果を第2表に示す。同表からも明らかなように、
Caの添加量が300 PPM (ltk+、 7
)を超えるとボールのいびつさ、クラックの発生数が急
激に増大しており、この結果からもCaの添加量は20
0 PPl’l以下にすることが望ましい。The results are shown in Table 2. As is clear from the table,
The amount of Ca added is 300 PPM (ltk+, 7
), the distortion of the ball and the number of cracks increase rapidly, and from this result, the amount of Ca added is 20
It is desirable to set it to 0 PPl'l or less.
上記実施例からも判明したように、時効軟化抑制効果、
及びボール硬さの点からCaの添加量は0゜0005〜
0.02重量%の範囲内に限定する必要がある。As was found from the above examples, the effect of suppressing aging softening,
And from the viewpoint of ball hardness, the amount of Ca added is 0°0005 ~
It is necessary to limit the amount within the range of 0.02% by weight.
次に本願第2発明の実施例について説明する。Next, an embodiment of the second invention of the present application will be described.
第1表
第2表
本実施例では、高純度のA g (99,99W10)
芯材を、高純度Au (99,999W10 )からな
る被覆材で被覆してなる複合ボンディングワイヤ素材を
作成した。このとき、上記被覆材は25PPMのCaを
一定量添加し、上記芯材はそれぞれ第3表の患8〜14
に示す値の量を添加したものとした。そして、このボン
ディングワイヤ素材を第1図に示すように、芯材2が1
3.6μmφ、被覆材3の外径が25μmφとなるよう
に伸線加工してボンディングワイヤ1を得た。Table 1 Table 2 In this example, high purity A g (99,99W10)
A composite bonding wire material was prepared by covering a core material with a covering material made of high purity Au (99,999W10). At this time, the above-mentioned coating material added a certain amount of Ca of 25 PPM, and the above-mentioned core material was
It was assumed that the amount of the value shown in was added. Then, as shown in FIG. 1, this bonding wire material is
The bonding wire 1 was obtained by wire drawing so that the outer diameter of the coating material 3 was 3.6 μmφ and the outer diameter of the covering material 3 was 25 μmφ.
この各ボンディングワイヤについて上記実施例と同様の
試験により伸線性(製品lQkm当たりの断線数)、ボ
ール形状、ボール硬さを測定した。なお、上記ボンディ
ング時の雰囲気は大気中で行った。For each bonding wire, the wire drawability (number of wire breaks per 1Q km of product), ball shape, and ball hardness were measured in the same tests as in the above examples. Note that the bonding was performed in the atmosphere.
第3表からも明らかなように、Caの添加量が300
PPM(No、 14 )を超えるとAg線単体に比べ
断線数が激増しており、これは芯材2と被覆材3との変
形抵抗の差によるむしれ、接合部の剥離によるためと考
えられる。ざらにまた、上記添加量が第3表
300 PPM以上では、ボールの変形数、クランクの
発生数とも増加していることがわかる。As is clear from Table 3, the amount of Ca added is 300
When PPM (No. 14) is exceeded, the number of disconnections increases dramatically compared to the Ag wire alone, and this is thought to be due to peeling due to the difference in deformation resistance between the core material 2 and the sheathing material 3, and peeling at the joint. . Furthermore, it can be seen that when the amount added is 300 PPM or more in Table 3, both the number of ball deformations and the number of cranks increase.
なお、本実施例でも、上記Ag線の場合と同様の方法に
て、時効軟化抑制効果を調べたが、Caの添加量が5
PPM以下では、30日保持強度、250°C高温強度
ともに満足する結果が得られなかった。これらのことか
ら、上記実施例においてもCaの添加量を5〜200
PPMの範囲内にするのが妥当である。In this example, the effect of suppressing aging softening was investigated using the same method as in the case of the Ag wire, but when the amount of Ca added was 5.
At PPM or less, satisfactory results were not obtained for both 30-day retention strength and 250°C high temperature strength. For these reasons, in the above examples as well, the amount of Ca added was set at 5 to 200.
It is appropriate to keep it within the PPM range.
以上のように本願第1発明に係るボンディングワイヤに
よれば、高純度Agに0.0005〜0.02重量%の
Caを添加し、また第2発明によれば、Ag芯材をAu
被覆材で被覆し、該芯材に0.0005〜0゜02重量
%のCaを添加したので、Ag芯材の時効軟化を抑制し
て機械的強度を長期にわたって保持できるとともに、ボ
ール硬さを所定硬度に維持してボンディング作業の信頼
性を向上できる効果がある。As described above, according to the bonding wire according to the first invention of the present application, 0.0005 to 0.02% by weight of Ca is added to high-purity Ag, and according to the second invention, the Ag core material is made of Au.
Since the core material is coated with a coating material and 0.0005 to 0.02% by weight of Ca is added to the core material, aging softening of the Ag core material can be suppressed and mechanical strength can be maintained over a long period of time. This has the effect of maintaining a predetermined hardness and improving the reliability of bonding work.
第1図は本願第2発明の詳細な説明するためのボンディ
ングワイヤの断面正面図である。
図において、1はボンディングワイヤ、2は芯材、3は
被覆材である。
特許出願人 株式会社神戸製鋼所代理人 弁理
士 下布 努
第1図FIG. 1 is a cross-sectional front view of a bonding wire for explaining in detail the second invention of the present application. In the figure, 1 is a bonding wire, 2 is a core material, and 3 is a covering material. Patent Applicant Kobe Steel Co., Ltd. Representative Patent Attorney Tsutomu Shimofu Figure 1
Claims (2)
Caを添加したことを特徴とするボンディングワイヤ。(1) A bonding wire characterized by adding 0.0005 to 0.02% by weight of Ca to high-purity Ag.
uを主成分とする被覆材で被覆したボンディングワイヤ
において、上記芯材に、0.0005〜0.02重量%
のCaを添加したことを特徴とするボンディングワイヤ
。(2) The outer periphery of the core material whose main component is high purity Ag is high purity A.
In a bonding wire coated with a coating material containing u as a main component, 0.0005 to 0.02% by weight is added to the core material.
A bonding wire characterized by adding Ca.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62322076A JPH01162343A (en) | 1987-12-18 | 1987-12-18 | Bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62322076A JPH01162343A (en) | 1987-12-18 | 1987-12-18 | Bonding wire |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01162343A true JPH01162343A (en) | 1989-06-26 |
Family
ID=18139649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62322076A Pending JPH01162343A (en) | 1987-12-18 | 1987-12-18 | Bonding wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01162343A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123597A (en) * | 2005-10-28 | 2007-05-17 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor devices |
JP4771562B1 (en) * | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag-Au-Pd ternary alloy bonding wire |
JP5095014B1 (en) * | 2012-02-09 | 2012-12-12 | オーディオ・ラボ有限会社 | Silver bonding wire manufacturing method and silver bonding wire |
EP3029167A4 (en) * | 2014-07-10 | 2017-08-09 | Nippon Steel & Sumikin Materials Co., Ltd. | Bonding wire for semiconductor device |
JP2019504472A (en) * | 2015-11-23 | 2019-02-14 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Coated wire |
JP2019529694A (en) * | 2016-09-09 | 2019-10-17 | ヘレウス マテリアルズ シンガポール ピーティーイー. リミテッド | Coated wire |
-
1987
- 1987-12-18 JP JP62322076A patent/JPH01162343A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123597A (en) * | 2005-10-28 | 2007-05-17 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor devices |
JP4722671B2 (en) * | 2005-10-28 | 2011-07-13 | 新日鉄マテリアルズ株式会社 | Bonding wires for semiconductor devices |
JP4771562B1 (en) * | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag-Au-Pd ternary alloy bonding wire |
JP5095014B1 (en) * | 2012-02-09 | 2012-12-12 | オーディオ・ラボ有限会社 | Silver bonding wire manufacturing method and silver bonding wire |
EP3029167A4 (en) * | 2014-07-10 | 2017-08-09 | Nippon Steel & Sumikin Materials Co., Ltd. | Bonding wire for semiconductor device |
US10381320B2 (en) | 2014-07-10 | 2019-08-13 | Nippon Steel Chemical & Material Co., Ltd. | Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium |
JP2019504472A (en) * | 2015-11-23 | 2019-02-14 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Coated wire |
US10960498B2 (en) | 2015-11-23 | 2021-03-30 | Heraeus Materials Singapore Pte., Ltd. | Coated wire |
JP2019529694A (en) * | 2016-09-09 | 2019-10-17 | ヘレウス マテリアルズ シンガポール ピーティーイー. リミテッド | Coated wire |
US11236430B2 (en) | 2016-09-09 | 2022-02-01 | Heraeus Materials Singapore Pte. Ltd. | Coated wire |
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