KR930001265B1 - Bonding wir for semiconductor elements - Google Patents

Bonding wir for semiconductor elements Download PDF

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Publication number
KR930001265B1
KR930001265B1 KR1019890702503A KR890702503A KR930001265B1 KR 930001265 B1 KR930001265 B1 KR 930001265B1 KR 1019890702503 A KR1019890702503 A KR 1019890702503A KR 890702503 A KR890702503 A KR 890702503A KR 930001265 B1 KR930001265 B1 KR 930001265B1
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South Korea
Prior art keywords
wire
bonding
weight
diameter
strength
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KR1019890702503A
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Korean (ko)
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KR900700217A (en
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야스히데 오노
요시오 오제끼
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신닛뽕세이데쓰 가부시끼가이샤
사이또오 히로시
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Publication of KR900700217A publication Critical patent/KR900700217A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
    • B23B5/08—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor for turning axles, bars, rods, tubes, rolls, i.e. shaft-turning lathes, roll lathes; Centreless turning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

내용 없음.No content.

Description

[발명의 명칭][Name of invention]

반도체 소자용 접합 와이어Junction Wire for Semiconductor Devices

[도면의 간단한 설명][Brief Description of Drawings]

제1도는 본 발명에 따른 Cu 함유 접합 와이어의 파단 강도의 경우 Cu 함유량과 열처리 조건과의 관계를 보이는 그래프.1 is a graph showing the relationship between Cu content and heat treatment conditions in case of breaking strength of Cu-containing bonded wire according to the present invention.

제2도는 접합 강도 측정 방법에 대한 예시도.2 is an illustration of a method of measuring the bond strength.

[발명의 상세한 설명]Detailed description of the invention

[발명의 분야][Field of Invention]

발명은 반도체소자와 외부 리이드를 서로 결속하기 위한 접합 와이어(bonding wire)에 관한 것이다.The present invention relates to a bonding wire for binding a semiconductor element and an external lead to each other.

[발명의 배경 ][Background of invention]

반도체소자의 전극을 외부 리이드에 접속하기 위하여, Au에 소량의 Ca, Be, Ge 등을 함유시킨 Au 합금으로 만들어지고 직경이 25∼50mm인 와이어, 즉 접합 와이어가 통상적으로 사용되고 있다.In order to connect the electrode of a semiconductor element with an external lead, the wire which is made from Au alloy which contains a small amount of Ca, Be, Ge, etc. in Au, and is 25-50 mm in diameter, ie, a joining wire, is used normally.

이 와이어를 사용하여 반도체소자와 리이드 프레임을 서로 접속할때에, 양자 모두 초음파에 의해 가압 접합되거나, 반도체소자에 대해서는 아아크로 선단을 둥글게한 후 고온 가압 접합이 실시되는 방법이 채택되고 있다.When the semiconductor element and the lead frame are connected to each other using this wire, both of them are press-bonded by ultrasonic waves, or a method in which high-temperature pressurization is performed after rounding the tip to arc for the semiconductor element.

그러나, 근년에 IC가 크기의 소형화, 집적화가 더 한층 이루어져서, 전극수의 증가 때문에 통상의 와이어 직경의 경우에 전극이 너무 큰 면적을 차지하게된 문제점이 발생된다. 이런 문제점을 해결하기 위하여, 와이어 직경을 작게하는 것이 필요하다. 그러나 현재 시판용의 와이어의 크기를 작게하는 경우에는 배선시 및 사용중에 단선율이 높아 와이어가 끊어지는 경우가 있다. 이런 와이어는 실용적이지 못하다.However, in recent years, ICs have been further downsized and integrated in size, resulting in a problem that the electrodes occupy too large an area in the case of a normal wire diameter due to an increase in the number of electrodes. In order to solve this problem, it is necessary to reduce the wire diameter. However, in the case of reducing the size of commercially available wires, the disconnection rate is high at the time of wiring and during use, and the wires may be broken. Such wires are not practical.

이때문에, 통상의 와이어의 경우 와이어 직경은 약 20μm 정도가 한계치이다.For this reason, about 20 micrometers in a wire diameter is a limit value in the case of a normal wire.

일본국 특허 미심사 공보 제56-49534호 및 제56-49535호에 개시된 바와 같이 Au에 30중량%의 Pt 또는 40중량%의 Pd를 첨가하여 와이어의 강도를 향상시키고 와이어 직경을 작게하는 등과 같이 와이어 직경을 작게하려는 여러가지 시도를 해오고 있다. 그러나, 합금원소들의 함유량이 일정 한계치를 넘으면 보올부의 경도가 증가하고 고온 가압 접합에 필요한 부하가 커져서 IC의 실리콘칩이 손상되기 쉽다는 문제점이 일어난다. 일본국 특허 미심사 공보 제60-15958호는 전극 배선에 대해 양호한 고온 가압 접합 특성을 갖는 접합 와이어로서 다른 원소를 Al에 혼합하는 Au 주체 합금을 제안하고 있다. 이것도 역시 전술한 문제점과 동일한 문제점을 갖는다. 따라서, 사용되어온 통상의 IC와 통상의 접합 방법에 어떤 특별한 변경없이 IC의 크기를 작게하여도 신뢰성이 강화되는데 효과적인 신규한 접합 와이어를 제공하는 것이 요청되고 있다.As disclosed in Japanese Unexamined Patent Publications Nos. 56-49534 and 56-49535, the addition of 30 wt% Pt or 40 wt% Pd to Au improves the strength of the wire and decreases the wire diameter. Various attempts have been made to reduce the wire diameter. However, when the content of the alloying elements exceeds a certain limit, there is a problem that the hardness of the retained portion increases and the load required for high temperature pressurization increases, causing damage to the silicon chip of the IC. Japanese Unexamined Patent Publication No. 60-15958 proposes an Au main alloy in which another element is mixed with Al as a bonding wire having good high temperature pressure bonding characteristics for electrode wiring. This also has the same problem as the above problem. Therefore, there is a need to provide a new bonding wire that is effective to enhance reliability even if the size of the IC is reduced without any special modification to the conventional IC and the conventional bonding method that have been used.

따라서, 본 발명의 목적은 접합 와이어의 직경이 통상의 와이어 직경보다 작을지라도 통상의 와이어의 신뢰성과 거의 같은 신뢰성을 갖는 접합 와이어를 제공하는데 있다. 또한 본 발명의 다른 목적은 극히 작은 직경을 가질뿐 아니라 제조시에도 충분히 높은 강도를 가지며 접합중의 파단 강도도 개선되도록 형성될 수 있는 반도체소자용 접합 와이어를 제공하는데 있다.Accordingly, it is an object of the present invention to provide a bonding wire having a reliability almost equal to that of a conventional wire even if the diameter of the bonding wire is smaller than the diameter of the conventional wire. In addition, another object of the present invention is to provide a bonding wire for a semiconductor device that can be formed to have not only an extremely small diameter but also have a sufficiently high strength in manufacturing and also improve the breaking strength during the bonding.

[발명의 상세한 설명 ]Detailed description of the invention

본 발명의 접합 와이어의 특징들은 다음과 같다.Features of the bonding wire of the present invention are as follows.

(1) Cu를 1∼5중량%, 잔여분은 Au를 함유하는 반도체소자용 접합 와이어.(1) A joining wire for semiconductor devices containing 1 to 5% by weight of Cu and the remainder containing Au.

(2) Cu를 1∼5중량%, Ge, Be, La와 In으로 구성되는 군에서 선택되는 적어도 1종 이상을 전체 0.0003∼0.01중량%, 잔여분은 Au를 함유하는 반도체소자용 접합 와이어.(2) A joining wire for semiconductor devices, in which at least one or more selected from the group consisting of 1 to 5% by weight of Cu, Ge, Be, La, and In is 0.0003 to 0.01% by weight of the total, and the remainder contains Au.

(3) Cu를 1∼5중량%, Pt를 1∼5중량%, 잔여분은 Au를 함유하는 반도체소자용 접합 와이어.(3) A joining wire for semiconductor devices containing 1 to 5% by weight of Cu, 1 to 5% by weight of Pt and the remainder containing Au.

(4) Cu를 1∼5중량%, Pt를 1∼5중량%, Ca, Ge, Be, La 및 In로 구성되는 군에서 선택되는 적어도 1종 이상을 전체 0.0003∼0.01중량%, 잔여분은 Au를 함유하는 반도체소자용 접합 와이어.(4) 0.0003 to 0.01% by weight of at least one selected from the group consisting of 1 to 5% by weight of Cu, 1 to 5% by weight of Pt, Ca, Ge, Be, La and In, and the remainder being Au Bonding wire for semiconductor elements containing.

본 발명에 따른 반도체소자용 접합 와이어에서, Au에 Cu를 1∼5중량% 함유시키는 이유는, Cu가 Au에 완전히 고용되므로써 모와이어(base wire)의 강도가 향상될 뿐아니라 접합 강도도 높아지기 때문에 종래의 와이어에서는 실현이 어려웠던 20μm 이하의 직경을 가지며 4g 이상의 파단 강도를 갖는 가는 와이어를 제조할 수 있기 때문이다. 이런 특징에서, Cu의 함유량 증가에 따라 강도도 상승된다. 그러나, Cu의 함유량이 5%를 넘으면, 내식성에 문제를 일으켜 장시간 경과후 신뢰성의 저하를 가져오게 된다. 또한, Cu의 함유량이 5%에 달하면, 접합 작업중에 형성되는 보올부의 경도가 높아져 고온 가압 접합에 요구되는 부하가 커지므로, 실리콘칩이 손상되기 쉽다.In the bonding wire for semiconductor devices according to the present invention, 1 to 5% by weight of Cu is contained in Au because the strength of the base wire is not only improved but also the bonding strength is increased because Cu is completely dissolved in Au. This is because a thin wire having a diameter of 20 μm or less and breaking strength of 4 g or more, which has been difficult to realize in a conventional wire, can be produced. In this aspect, the strength is also increased with increasing content of Cu. However, when the content of Cu exceeds 5%, there is a problem in corrosion resistance, resulting in a decrease in reliability after a long time. In addition, when the content of Cu reaches 5%, the hardness of the bowl portion formed during the joining operation increases, and the load required for high temperature pressurization increases, so that the silicon chip is likely to be damaged.

원료로 사용되는 Au와 Cu에 다량의 불순물이 함유되면, 제품의 특성이 불안정해지고 이로인해 가는 와이어의 제조시와 접합 작업시에 단선의 원인이 되기 때문에, 99.9%의 고순도로 하는 것이 바람직하다.When a large amount of impurities are contained in Au and Cu used as raw materials, the characteristics of the product become unstable and cause disconnection in the production and joining work of the resulting wire, and therefore it is desirable to have a high purity of 99.9%.

배선 작업중에 발생하는 작업 변형을 줄이므로써 적당한 연성과 충분한 강도를 보장하기 위해 적당한 시간 동안 200∼600℃에서 열처리하는 것이 바람직하다.In order to ensure proper ductility and sufficient strength by reducing the work deformation occurring during wiring work, it is desirable to heat-treat at 200 to 600 ° C. for a suitable time.

인발된 상태 그대로의 가는 와이어는 열등한 연성(신장)과 작업 변형에 의한 불량한 비틀림을 갖기 때문에 종종 실용적으로 사용하기가 불가능하다. 따라서, 통상적으로 와이어에 아닐링 작업을 실시한다. 일반적으로, 열처리 온도가 높을수록 그리고 그 기간이 길수록 강도는 더 저하하며 연성은 더 높아진다. 그러나, 그 열처리 정도는 합금 성분들의 함유량에 따라 변화한다. 그러므로. 와이어의 직경과 성분에 따라 열처리 조건을 선택 필요가 있다. 또한, 구조의 재결정과 그레인(grain) 증가는 열처리에 의해 진행된다. 결정 그레인의 크기가 와이어 직경에 달하면, 강도와 연성이 상당히 저하된다. 그러므로 얇은 직경의 와이어의 경우에는 열처리 조건의 선택이 매우 중요하다.Thin wires as they are drawn often have inferior ductility (elongation) and poor torsion due to work deformation and are often not practical in use. Therefore, the annealing operation is usually performed on the wire. In general, the higher the heat treatment temperature and the longer the period, the lower the strength and the higher the ductility. However, the degree of heat treatment varies with the content of the alloying components. therefore. It is necessary to select heat treatment conditions according to the diameter and the composition of the wire. In addition, the recrystallization and grain increase of the structure proceed by heat treatment. When the size of the crystal grain reaches the wire diameter, the strength and the ductility deteriorate considerably. Therefore, for thin diameter wires, the choice of heat treatment conditions is very important.

제1도는 10μm의 직경을 가지고 Cu를 함유하는 와이어의 경우 4g 이상의 파단 강도를 보창하기 위한 열처리 조건을 보이는 그래프이다. 실선은 400℃ 열처리의 경우이고, 점선은 200℃ 열처리의 경우이다.FIG. 1 is a graph showing heat treatment conditions for compensating the breaking strength of 4 g or more in the case of a wire containing Cu having a diameter of 10 μm. The solid line is a case of 400 degreeC heat processing, and the dotted line is a case of 200 degreeC heat processing.

또한, 특히 통상의 금 접합 와이어에 첨가되어온 Ca, Be, Ge, La 및 In의 첨가는 본 발명에 따른 접합 와이어의 접합 강도를 향상시키는데 효과적이다. 이를 달성하기 위해서는 이들 원소에서 선택되는 1종 이상의 원소를 전체 0.0003∼0.01중량%만큼 첨가할 수 있다.In addition, the addition of Ca, Be, Ge, La, and In, which have been added especially to conventional gold bonding wires, is effective in improving the bonding strength of the bonding wires according to the present invention. In order to achieve this, one or more elements selected from these elements may be added in an amount of 0.0003 to 0.01 wt%.

본 발명에 따른 접합 와이어의 경우, 본 발명에 따른 화학 성분을 갖는 Au 합금은 진공 용융로 등에서 용융되어 주조된다. 그후, 와이어 인발 작업, 열처리 등을 하여 소정의 직경을 갖는 와이어를 얻는다.In the case of the joining wire according to the present invention, the Au alloy having the chemical component according to the present invention is melted and cast in a vacuum melting furnace or the like. Thereafter, a wire drawing operation, heat treatment, or the like is performed to obtain a wire having a predetermined diameter.

본 발명의 잇점들을 명확히하는 실시예들을 설명할 것이다.Embodiments will be described to clarify the advantages of the present invention.

99.99%의 순도를 갖는 고순도 Au와 99.9%의 순도를 갖는 고순도 Cu를 사용하여, 표 1에 보인 원소들을 첨가한 재료를 진공 용융로에서 녹였다. 그뒤 재료를 와이어 인발과 열처리를 하여 10, 12, 15, 19, 25 및 30μm의 직경을 갖는 와이어들을 얻었다.Using high purity Au having a purity of 99.99% and high purity Cu having a purity of 99.9%, the material to which the elements shown in Table 1 were added was melted in a vacuum melting furnace. The material was then wire drawn and heat treated to obtain wires with diameters of 10, 12, 15, 19, 25 and 30 μm.

인장 시험에서는 100mm의 게이지 길이를 갖는 시험편을 사용하였다. 접합 강도 측정은 제2도와 같이 접합 와이어(3)를 Si 칩(1)과 리이드 프레임(2)에 접속한 상태에서 화살 방향으로 잡아당겨 파단 강도를 측정하였다. 접합 후의 와이어 파단 하중, 신장 및 파단 강도에 대한 본 발명의 와이어의 결과들을 비교 재료들의 결과와 함께 표 1에 나타내었다.In the tensile test, a test piece having a gauge length of 100 mm was used. Bond strength measurement measured the breaking strength by pulling in the arrow direction in the state which connected the bonding wire 3 to the Si chip 1 and the lead frame 2 like FIG. The results of the wires of the present invention for wire breaking load, elongation and breaking strength after bonding are shown in Table 1 along with the results of the comparative materials.

표 1에서 명백하듯이, 본 발명에 따른 와이어들은 그 얇은 직경들에 관계없이 파단 강도와 접합 강도가 우수하다. 또한, 종래의 접합 와이어의 직경과 같은 직경을 갖는 접합 와이어를 사용하면, 본 발명의 경우에서 더 높은 강도를 갖는 와이어를 얻을 수 있다.As is apparent from Table 1, the wires according to the present invention are excellent in breaking strength and joint strength regardless of their thin diameters. In addition, by using a joining wire having a diameter equal to that of a conventional joining wire, a wire having a higher strength can be obtained in the case of the present invention.

[표 1a]TABLE 1a

Figure kpo00001
Figure kpo00001

[표 1b]TABLE 1b

Figure kpo00002
Figure kpo00002

* : 접합 후 IC 칩에 손상이 관찰되었음.*: Damage to the IC chip was observed after bonding.

Claims (7)

Cu를 1∼5중량%, 잔여분은 Au와 부수적 불순물들을 함유하는 반도체소자용 접합 와이어.A joining wire for semiconductor devices containing 1 to 5% by weight of Cu and the remainder containing Au and incidental impurities. Cu를 1∼5중량%, Ca, Ge, Be, La 및 In으로 구성되는 군에서 선택되는 1종 이상을 전체 0.0003∼0.01중량%, 잔여분은 Au와 부수적 불순물들을 함유하는 반도체소자용 접합 와이어.A joining wire for a semiconductor device comprising 1% by weight to 5% by weight of Cu, 0.0003% by weight to 0.01% by weight of at least one selected from the group consisting of Ca, Ge, Be, La, and In, and the remainder containing Au and incidental impurities. Cu를 1∼5중량%, Pt를 1∼5중량%, 잔여분은 Au와 부수적 불순물들을 함유하는 반도체소자용 접합 와이어.A joining wire for a semiconductor device, which contains 1 to 5% by weight of Cu, 1 to 5% by weight of Pt, and the remainder containing Au and incidental impurities. Cu를 1∼5중량%, Pt를 1~5중량%, 그리고 Ca,Ge,Be,La 및 In으로 구성되는 군에서 선택되는 1종 이상을 전체 0.0003∼0.01중량%, 잔여분을 Au를 함유하는 반도체소자용 접합 와이어.1-5 wt% of Cu, 1-5 wt% of Pt, 0.0003-0.01 wt% of one or more selected from the group consisting of Ca, Ge, Be, La, and In, and the remainder containing Au Bonding wire for semiconductor device. 제1 내지 4항중 어느 한 항에 있어서, 와이어 직경이 20μm 이하인 반도체소자용 접합 와이어.The joining wire for semiconductor elements according to any one of claims 1 to 4, wherein the wire diameter is 20 µm or less. 제1 내지 4항중 어느 한 항에 있어서, 파단 강도가 4g 이상인 반도체소자용 접합 와이어.The bonding wire for semiconductor elements according to any one of claims 1 to 4, wherein the breaking strength is 4 g or more. 제1 내지 4항중 어느 한 항에 있어서, 와이어 직경이 15μm 이하이고, 파단 강도가 4g 이상인 반도체 소자용 와이어.The wire for semiconductor elements according to any one of claims 1 to 4, wherein the wire diameter is 15 µm or less and the breaking strength is 4 g or more.
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DE3990432C1 (en) 1994-06-23
GB8928848D0 (en) 1990-06-13
GB2229859B (en) 1993-01-06
KR900700217A (en) 1990-08-11
JPH02119148A (en) 1990-05-07
GB2229859A (en) 1990-10-03
WO1989011161A1 (en) 1989-11-16
JP2745065B2 (en) 1998-04-28

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