DD201156A1 - Precious metal alloys for micro-wire materials - Google Patents

Precious metal alloys for micro-wire materials Download PDF

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Publication number
DD201156A1
DD201156A1 DD81233812A DD23381281A DD201156A1 DD 201156 A1 DD201156 A1 DD 201156A1 DD 81233812 A DD81233812 A DD 81233812A DD 23381281 A DD23381281 A DD 23381281A DD 201156 A1 DD201156 A1 DD 201156A1
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micro
wire
wires
precious metal
alloys
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DD81233812A
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German (de)
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Hans-Heiner Daut
Martina Koellner
Friedrich Schade
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Daut Hans Heiner
Martina Koellner
Friedrich Schade
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Priority to DD81233812A priority Critical patent/DD201156A1/en
Publication of DD201156A1 publication Critical patent/DD201156A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

Mikrodraehte zur Halbleiterkontaktierung bestehen ueblicherweise aus dotiertem Au der Reinheit 99,99, die zwar eine ausgezeichnete Korrosionsbestaendigkeit besitzen, sich aber nur schwierig an die Endabmessung (d*0,003 mm) verformen lassen. Ueberraschenderweise wurde gefunden, dass AuAg- bzw. AgPd-Mikrodraehte reduzierter Korrosionsbestaendigkeit sich unter Verwendung einer Schutzgasathmosphaere gut auf automatischen Drahtbondern verarbeiten lassen und die so hergestellten Bauelemente die geforderte Zuverlaessigkeit besitzen. Diese Draehte lassen sich in der ueblichen Weise schmelzmetallurgisch herstellen und leichter zu Mikrodraht verformen als Au4N. Durch Einschaltung einer entsprechenden Waermebehandlung und Verwendung einer Schutzatmosphaere im Bondprozess laesst sich die erhoehte Festigkeit reduzieren und die notwendige Zuverlaessigkeit des mikroelektronischen Baueelementes erreichen.Micro-wafers for semiconductor contact usually consist of doped Au of purity 99.99, which, although excellent in corrosion resistance, are difficult to deform to the final dimension (d * 0.003 mm). Surprisingly, it has been found that AuAg or AgPd micro-wires of reduced corrosion resistance can be processed well on automatic wire bonders using a protective gas atmosphere and the components produced in this way have the required reliability. These wires can be produced by melt metallurgy in the usual way and are easier to form into micro-wire than Au4N. By using an appropriate heat treatment and using a protective atmosphere in the bonding process, the increased strength can be reduced and the necessary reliability of the microelectronic structural element can be achieved.

Description

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Edelmetallegierungen für Mikrodrahtwerkstoffe AnwendungsgebietPrecious metal alloys for micro-wire materials Field of application

Anstelle des bisher verwendeten dotierten Au-Mikrodrahtes können Edelmetallegierungen auf Au- und Ag-Basis als Mikrodrahtwerkstoff in der HL-Industrie eingesetzt werden. Die in der Erfindung beschriebenen Mikrodrahtmaterialien sind TC- bzw. TS-bondbar und damit als Bonddraht in Festkörperschaltkreisen geeignet.Instead of the previously used doped Au microwire, precious metal alloys based on Au and Ag can be used as micro-wire material in the HL industry. The microwire materials described in the invention are TC- or TS-bondable and thus suitable as a bonding wire in solid-state circuits.

Charakteristik der bekannten technischen LösungenCharacteristic of the known technical solutions

Zur Halbleiterkontaktierung werden in großem Umfang Mikrodrähte aus dotiertem Au der Reinheit 4N eingesetzt. Nach WP 126 559 und WP 206 574 wird dazu Au der Reinheit 5W mit Y und Fe dotiert.For semiconductor contacting, micro-wires of doped Au of purity 4N are widely used. According to WP 126 559 and WP 206 574, Au of purity 5 W is doped with Y and Fe.

Die guten elektrischen und thermischen Eigenschaften sowie die gute Verarbeitbarkeit von dotierten Au-Mikrodrähten sind bekannt ("Halbzeug für die Elektronik", Firmenprospekt der DEGUSSA, Hanau). Der Einfluß der Dotierungselemente und der Herstellungatechnologien auf die Eigenschaften der Mikrodrähte ist beschrieben ("WerkstoffProbleme bei der Kontaktierung von Goldmikrodraht", Technische Mitteilungen der KDT des Mansfeld Kombinats, 3/79). Dotierter Au-Mikrodraht besitzt eine erhöhte Festigkeit bei Raum- undThe good electrical and thermal properties as well as the good processability of doped Au micro-wires are known ("semifinished products for electronics", company brochure of DEGUSSA, Hanau). The influence of the doping elements and the manufacturing technologies on the properties of the microwires is described ("Material Problems in the Contacting of Gold Micro-Wire", Technical Bulletins of the KDT of the Mansfeld Kombinats, 3/79). Doped Au micro-wire has an increased strength in space and

DEL 1931*079220DEL 1931 * 079220

233812 2233812 2

mittleren Temperaturen sowie eine ausgezeichnete Korrosions- und Oxydationsbeständigkeit. Die Drähte lassen sich im Feinstdrahtbereich nur schwer verformen, so daß besondere Verfahren angewendet werden müssen, um den Draht an die Endabmessung ziehen zu können.medium temperatures and excellent corrosion and oxidation resistance. The wires are difficult to deform in the Feinstwrahtbereich so that special procedures must be used to pull the wire to the final dimension can.

Die in der Erfindung beschriebenen Edelmetallegierungen werden in der Schwachstrom- und Meßtechnik als Kontaktwerkstoffe für Schaltstücke eingesetzt· Sie haben die Aufgabe, den elektrischen Strom möglichst verlustlos von einem Schaltstück auf das andere zu übertragen sowie für eine einwandfreie Unterbrechung des Stromflusses im gewünschten Augenblick zu sorgen. Die Materialien besitzen einen niedrigen elektrischen und Kontaktwiderstand, sind bedingt korrosionsbeständig und gut verformbar; ihre mechanische Festigkeit ist bei mittlerer Dehnung höher als bei reinem Gold.The noble metal alloys described in the invention are used in weak-current and measuring technology as contact materials for switching pieces · They have the task of loss of electrical power from one contact piece to the other and to ensure a proper interruption of the flow of current at the desired moment. The materials have a low electrical and contact resistance, are conditionally corrosion resistant and well deformable; its mechanical strength is higher at medium elongation than pure gold.

2338 12 22338 12 2

Ziel· der ErfindungObject of the invention

Das Ziel der Erfindung besteht in der Herstellung eines bondfähigen Mikrodrahtes mit verbesserten mechanischen, elektrischen, thermischen und Korrosionseigenschaften, der über eine ausreichende Plastizität verfügt, der den thermischen und elektrisch-mechanischen Belastungen im Betrieb standhält und zur Verarbeitung auf automatischen Drahtbondern geeignet ist.The object of the invention is to produce a bondable micro-wire with improved mechanical, electrical, thermal and corrosion properties, which has sufficient plasticity, which withstands the thermal and electrical-mechanical stresses in operation and is suitable for processing on automatic Drahtbondern.

Die erfindungsgemäß eingesetzten Mikrodrahtwerkstoffe besitzen einen relativ hohen Anteil an Legierungselementen, so daß man bei der Anwendung dieser Materialien gleichzeitig einen erheblichen Anteil an Au einsparen kann.The micro-wire materials used in the invention have a relatively high proportion of alloying elements, so that you can save a considerable amount of Au at the same time in the application of these materials.

Wesen der ErfindungEssence of the invention

Mikrodrähte werden in großem Umfang aus dotiertem Au der Reinheit Au99,99 hergestellt. Au-Ag- bzw. Ag-Legierungen werden durch ihre erhöhte Festigkeit und die geringere Korrosionsbeständigkeit nicht verwendet. Überraschenderweise wurde gefunden, daß Mikrodrähte aus diesen Werkstoffen ebenfalls zur automatischen Drahtkontaktierung in Halbleiterbauelementen verwendet werden können, wenn geeignete Verarbeitungsbedingungen während der Drahtherstellung und während des Kontaktierens eingehalten werden. Damit sind die als Kontaktwerkstoffe bekannten Au-Ag- bzw. Ag-Pd-Legierungen ebenfalls zur Halbleiterkontaktierung geeignet; sie lassen sich außerdem leicht zu Mikrodraht ι ,verformen.Microwires are produced to a large extent from doped Au of Au99.99 purity. Au-Ag or Ag alloys are not used due to their increased strength and lower corrosion resistance. Surprisingly, it has been found that micro-wires made of these materials can also be used for automatic wire bonding in semiconductor devices, if suitable processing conditions are observed during wire production and during contacting. Thus, the known as contact materials Au-Ag or Ag-Pd alloys are also suitable for Halbleiterkontaktierung; they can also be easily micro-wire, deform.

Die in der Erfindung beschriebenen Legierungen werden im Vakuuminduktionsofen (p = IO Torr) erschmol-The alloys described in the invention are melted in the vacuum induction furnace (p = 10 torr).

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zen, wobei die Materialien Ag, Ni1 Go und Pd mit einem Gehalt von 99,9 % und Au der Reinheit 99,99 % eingesetzt werden. Die Gußbolzen werden zunächst stranggepreßt. Danach schließt sich eine Kaltverformung im Direktzug bis auf Enddurchmesser an mit entsprechenden Wärmebehandlungen.zen, wherein the materials Ag, Ni 1 Go and Pd are used with a content of 99.9 % and Au 99.99 % purity. The cast bolts are initially extruded. This is followed by a cold deformation in direct train up to the final diameter with corresponding heat treatments.

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Anwendungsbeispieleapplications Beispiel 1 Herstellung von Au-LeqierunqsmikrodrahtExample 1 Preparation of Au-Leqierunqsmikrodraht

Das Erschmelzen des Materials läuft in der oben beschriebenen Weise ab. Die Gußbolzen werden bis an 6 mm Durchmesser stranggepreßt und anschließend bei T =800 °C/0,5 h + Ar/H20 homogenisiert. Danach schließt sich eine Kaltverformung bis # ^ 99,9 % an. Die Drähte werden dann angelassen bei T = 400 - 600 0C und t = 5 h und bis an Enddurchmesser (d = 25 - 30 /Um) verformt. Entsprechend den geforderten Verarbeitungseigenschaften wird eine Schlußglühung bei T = 500 ./.. 650 °G/O,1 s vorgenommen.The melting of the material proceeds in the manner described above. The cast bolts are extruded to 6 mm in diameter and then homogenized at T = 800 ° C / 0.5 h + Ar / H 2 0. This is followed by cold deformation to # ^ 99.9 % . The wires are then tempered at T = 400 - 600 0 C and t = 5 h and deformed to final diameter (d = 25 - 30 / Um). According to the required processing characteristics, a final annealing is carried out at T = 500 ./ .. 650 ° G / O, 1 s.

Beispiel 2 Herstellung von AgPd-MikrodrahtExample 2 Preparation of AgPd microwire

Das Erschmelzen des Materials sowie das Strangpressen der Gußbolzen wird in der oben beschriebenen Weise durchgeführt. Nach dem Strangpressen wird das Material kaltverformt (i£ ^ 99,9 %). Im Anschluß daranThe melting of the material and the extrusion of the cast bolts is carried out in the manner described above. After extrusion, the material is cold worked (99.9 %) . After that

wird bei T = 580 0C zwischengeglüht und bis an Enddurchmesser (d =25 ... 30 ,um) verformt. Entsprechend den geforderten Verarbeitungseigenschaften wird eine Schlußglühung bei T = 200 ... 700 °C/O,1 s vorgenommen .is annealed at T = 580 0 C and deformed to final diameter (d = 25 ... 30, um). According to the required processing properties, a final annealing is carried out at T = 200 ... 700 ° C / O, 1 s.

Claims (1)

233812 2233812 2 Erfindungsanspruchinvention claim Edelmetallegierungen für Mikrodrahtwerkstoffe, dadurch gekennzeichnet, daß sie aus AuAg-Legierungen bei Ag-Gehalten s 30 Masse-% und Zusätzen von Cu u./o. Ni u./o. Co in Konzentrationen von £ 5 Masse-% bestehen, wobei die üblichen Verunreinigungen Fe, Al, Pd, Pt, Sb, Bi, Ge, As einen Gesamtgehalt von 100 ppm nicht überschreiten dürfen bzw. aus Ag-Legierungen bestehen, die β 35 Masse-% Pd bei Pe, Al, Pt, Sb, Bi, Ge, As ^ 100 ppm enthalten und in bekannter Weise auf schmelzmetallurgischem Weg und unter Einsatz direkter Ziehverfahren an die Endabmessung verformt werden, wobei zur Einstellung der geforderten Eigenschaften eine Schlußglühung im Bereich von 150...850 0C vorgenommen und bei der Verarbeitung im Drahtbonder sowie der Verkappung des Bauelementes eine Schutzgasatmosphäre verwandt wird, um die Korrosion/Oxydation des Drahtes zu vermeiden und die Zuverlässigkeit des Bauelementes zu erhöhen.Precious metal alloys for microwire materials, characterized in that they consist of AuAg alloys with Ag contents of 30% by weight and additions of Cu and / or. Ni and / or. Co in concentrations of 5% by weight, the usual impurities Fe, Al, Pd, Pt, Sb, Bi, Ge, As may not exceed a total content of 100 ppm or consist of Ag alloys, the β 35 mass - Pd at Pe, Al, Pt, Sb, Bi, Ge, As ^ contained 100 ppm and are deformed in a known manner by melt metallurgy and using direct drawing process to the final dimension, wherein the setting of the required properties a final annealing in the range of 150 ... 850 0 C and in the processing in the wire bonder and the capping of the component, a protective gas atmosphere is used to prevent the corrosion / oxidation of the wire and to increase the reliability of the device.
DD81233812A 1981-10-02 1981-10-02 Precious metal alloys for micro-wire materials DD201156A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3990432C1 (en) * 1988-05-02 1994-06-23 Nippon Steel Corp Bonding wire for connecting electrode of semiconductor element
DE19821395A1 (en) * 1998-05-13 1999-11-25 Heraeus Gmbh W C Ultra-fine gold alloy wire for wire bonding or flip-chip bonding of semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3990432C1 (en) * 1988-05-02 1994-06-23 Nippon Steel Corp Bonding wire for connecting electrode of semiconductor element
DE19821395A1 (en) * 1998-05-13 1999-11-25 Heraeus Gmbh W C Ultra-fine gold alloy wire for wire bonding or flip-chip bonding of semiconductor devices
DE19821395C2 (en) * 1998-05-13 2000-06-29 Heraeus Gmbh W C Use of a fine wire made of a nickel-containing gold alloy

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