WO1989011161A1 - Bonding wire for semiconductor elements - Google Patents

Bonding wire for semiconductor elements Download PDF

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Publication number
WO1989011161A1
WO1989011161A1 PCT/JP1989/000463 JP8900463W WO8911161A1 WO 1989011161 A1 WO1989011161 A1 WO 1989011161A1 JP 8900463 W JP8900463 W JP 8900463W WO 8911161 A1 WO8911161 A1 WO 8911161A1
Authority
WO
WIPO (PCT)
Prior art keywords
wire
bonding
strength
bonding wire
balance
Prior art date
Application number
PCT/JP1989/000463
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuhide Ono
Yoshio Ozeki
Original Assignee
Nippon Steel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corporation filed Critical Nippon Steel Corporation
Priority to KR1019890702503A priority Critical patent/KR930001265B1/en
Priority to DE3990432A priority patent/DE3990432C1/en
Publication of WO1989011161A1 publication Critical patent/WO1989011161A1/en
Priority to GB8928848A priority patent/GB2229859B/en
Priority to SG122193A priority patent/SG122193G/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
    • B23B5/08—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor for turning axles, bars, rods, tubes, rolls, i.e. shaft-turning lathes, roll lathes; Centreless turning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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Definitions

  • the present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
  • Au alloy wires containing trace amounts of Ca, Be, Ge, etc. have been used with a wire diameter of 25 to 50 mm.
  • ⁇ m wire i.e., a bonding wire, is used.
  • both are pressure-welded by ultrasonic waves, or the electrodes of the semiconductor element are connected by arc welding.
  • a method is adopted in which the tip is poled up and then thermally crimped.
  • An object of the present invention is to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. target. Further, as another object of the present invention, it is possible to form a very fine wire with high strength even during manufacturing, and to achieve excellent breaking strength at the time of bonding and to achieve extremely low breakage. The object is to provide a bonding wire for semiconductor devices. Brief description of the drawing
  • Fig. M'1 is a graph showing the relationship between the Cu content and the heat treatment conditions with respect to the breaking strength of the bonding wire of the present invention containing Cu. the law of nature ,
  • FIG. 2 is an explanatory diagram of the bonding strength measuring method. BEST MODE FOR CARRYING OUT THE INVENTION
  • the reason why Cu is contained in Au in an amount of ⁇ to less than 5 wt % is that Cu is completely contained in Au.
  • the strength of the bus bar is improved by dissolving in the This is because it not only increases the bonding strength, but also makes it possible to make a fine wire with a wire diameter of 20 m or less, which was quite difficult with conventional wires, and the content of ⁇ u is 1% or more.
  • a breaking strength of 4 gr or more can be added if As for this feature, the strength increases as the Cu content increases.
  • the Gu content reaches 5%, the hardness of the ball formed during bonding increases, and the load required for thermocompression bonding increases, causing damage to the silicon chip. to give.
  • As-drawn black wire has no ductility (elongation) and curls strongly due to distortion during processing, making it unusable.
  • Annealing heat treatment is performed.
  • the higher the heat treatment temperature and the longer the heat treatment time the lower the strength and the higher the ductility, but the extent varies depending on the content of the alloy components. Therefore, it is necessary to select the heat treatment conditions according to the wire diameter and composition.
  • this heat treatment promotes recrystallization of the structure and grain growth, but when the grain size approaches the wire diameter, both strength and ductility decrease significantly.
  • the selection of heat treatment conditions is particularly important in the case of small-diameter wires.
  • Fig. 1 is a graph showing the heat treatment conditions under which a wire containing Cu and having a wire diameter of 10 m secures a fracture strength of 4 gr or more.
  • the solid line indicates the case of treatment at 400°C, and the dashed line indicates the case of treatment at 200°C.
  • the addition of Ca , Be , Ge , La , and In which are also used in addition to conventional gold bonding wires , is useful for the bonder of the present invention . improve the bonding strength of the connecting wire.
  • one or more of these elements can be added in a total amount in the range of 0.0003 to ⁇ .01%. monkey
  • the bonding wire of the present invention is produced by melting and forging an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by wire drawing, aging treatment, and the like. A wire of the desired wire diameter is thus produced.
  • Table 1 A material added with elements such as It was melted in a vacuum melting furnace, drawn, and heat-treated.
  • the wire diameter is 10m, some are 12m, 15m, 9m25m, 30m.
  • test pieces with a gauge length of 100 order were used.
  • the bonding strength was measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 as shown in Fig. 1 in the direction of the arrow.
  • the breaking strength of the sharpener was measured. Table 1 compares the wire breaking load, elongation and breaking strength after bonding with those of the comparative materials.
  • the wire of the present invention has excellent breaking strength and bonding strength in spite of its small diameter. If you use the same wire diameter as the ear, you will get a wire with higher strength.
  • the wire of the present invention is excellent in breaking strength and bonding strength, and in particular, is 10% stronger than the conventional wire.
  • the wire is more reliable than the conventional wire and is useful for miniaturization of highly integrated LSIs.
  • a bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2) which comprises 1 to less than 5 wt% of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 ⁇ in diameter.
  • This invention relates to a bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2). Consisting of less than wt % of Cu, the balance being Au and unavoidable impurities, having good breaking strength and bonding strength, and obtaining a highly reliable connection even when the diameter is as small as about 10 m. make it possible.
  • PCT used to identify the PCT 3 ⁇ 4 member states on page 1 of the International Sword Brochure published under the
  • the present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
  • the two When this wire is used to join the semiconductor element and the lead frame together, the two may be pressure-welded by ultrasonic waves, or, as for the electrodes of the semiconductor element, contact may be made.
  • a method is adopted in which the tip is balled up with a seal and then thermocompression is performed.
  • An object of the present invention is to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. do .
  • Another object of the present invention is to develop a fine wire that has a high strength even during production, can be made into an extra-fine wire, and has excellent breaking strength at the time of bonding. It is intended to provide a bonding wire for semiconductor devices with less cost.
  • Fig. ⁇ is a graph showing the relationship between the CU content and the heat treatment conditions with regard to the breaking strength of the bonding wire of the present invention containing Cu;
  • FIG. 2 is an explanatory diagram of the bonding strength measuring method. BEST MODE FOR CARRYING OUT THE INVENTION
  • the reason why Cu is contained in Au in an amount of less than 1 to 5 wt % is that Cu is completely solidified in Au.
  • the melting improves the strength of the bus bar. Not only does this increase the bonding strength, but it is also difficult to make wire with a wire diameter of 20 m or less, which was difficult with conventional wires. If it is, it is possible to satisfy the breaking strength of 4 gr or more. This feature shows that the strength increases as the Cu content increases. cormorant .
  • the Cu content reaches 5%, the hardness of the pole formed at the time of mounting increases, and the load required for thermocompression bonding increases. This is to inflict damage.
  • the raw materials Au and Cu contain a large amount of impurities, the characteristics of the product will become unstable, and it will cause breakage during thinning and joining. It is preferable to have a high purity of ?/ 0 or higher.
  • Heat treatment at a temperature of 200 to 600°G for an appropriate time is recommended in order to remove the working strain introduced during wire drawing and to maintain adequate ductility and sufficient strength. desirable.
  • As-drawn fine wire has no ductility (elongation) and curls strongly due to working distortion, which may make it unusable.
  • Annealing heat treatment is performed. Generally, the higher the heat treatment temperature and the longer the heat treatment time, the lower the strength and the higher the ductility. Therefore, it is necessary to select the heat treatment conditions according to the wire diameter and composition. This heat treatment promotes recrystallization of the structure and grain growth, but when the grain size approaches the wire diameter, both strength and ductility drop significantly. The selection of heat treatment conditions is especially important in the case of small-diameter wires.
  • Fig. ⁇ is a graph showing heat treatment conditions for securing a breaking strength of 4 gr or more in a wire containing Cu and having a wire diameter of 10 m.
  • the solid line shows the case of treatment at 400°C and the dashed line shows the case of treatment at 200°C.
  • the addition of Ca , Be , Ge , La , and In which are also used for adding conventional gold bonding wires , is useful in the present invention .
  • the ⁇ type or two or more types of these elements can be added in a total amount in the range of 0.0003 to 0.01 wt%. Wear .
  • the bonding wire of the present invention is produced by melting and casting an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by drawing, heat treatment, and the like. A wire with a desired wire diameter is produced by this process.
  • test pieces with a gauge length of 100 order were used.
  • the bonding strength was measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 as shown in Fig. 1 in the direction of the arrow.
  • the breaking strength was measured when The breaking load, elongation and breaking strength after bonding of the wire are shown in Table ⁇ in comparison with the comparative materials.
  • the wire of the present invention is excellent in breaking strength and bonding strength regardless of its small diameter.
  • a wire with higher strength can be obtained.
  • the wire of the present invention is excellent in breaking strength and bonding strength, and in particular, compared with the conventional wire, even if it is as small as 10 Um, As a wire with higher reliability than conventional wires, it is useful for miniaturization of highly integrated LSIs.
  • This invention relates to a bonding wire (3) for connecting an electrode of a semiconductor device to an external lead (2), the bonding wire (3) being 1-5 wt. It consists of 100% uncured Cu and the balance Au and unavoidable impurities, and has excellent breaking strength and bonding strength, and obtains a highly reliable connection even with a screen diameter of about 10 m. make it possible.
  • a bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2) which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 ⁇ in diameter.
  • the invention of Aliran Liquid Co., Ltd. is to combine the electrodes of the semiconductor element with the external leads (2).
  • said bonding wire (3) for connecting countries, said bonding wire (3) consists of less than 1-5 wt% Cu, balance Au and unavoidable impurities. Moreover, it is excellent in breaking strength and bonding strength, and makes it possible to obtain a highly reliable connection even with a small diameter of about 10 m.
  • the present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
  • the present invention aims to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. 'Purpose'.
  • Another object of the present invention is to provide a wire which has high strength even during production, can be made into an extra-fine wire, and has excellent breaking strength during bonding and is extremely resistant to breakage. That is why we are trying to provide bonding wires for semiconductor devices that are less in demand.
  • FIG. ⁇ is a graph showing the relationship between the Cu content and the heat treatment conditions with respect to the breaking strength of the bonding wire of the present invention containing Cu. ,
  • Fig. 2 is an explanatory diagram of the bonding strength measuring method.
  • a bonding wire for a semiconductor device consisting of u.
  • the reason why Cu is contained in Au in an amount of less than 1 to 5 wt% is that Cu
  • the strength of the bus bar is improved. Not only is the bonding strength increased, but even fine wires with a wire diameter of 20 m or less, which has been difficult with conventional wires, contain 1% or more of Cu. If it is, it is possible to satisfy the breaking strength of 49r or more. As for this feature, an increase in strength can be observed as the content of ⁇ u increases, but if the content exceeds 5%, corrosion resistance becomes a problem and reliability is impaired after a long period of time. cormorant . In addition, when the Gu content reaches 5%, the hardness of the pole formed at the time of bonding increases, and the load required for thermocompression bonding increases. This is to inflict damage.
  • Heat treatment at a temperature of 200 to 600°C for an appropriate time is recommended in order to remove the ⁇ strain introduced during wire drawing and to maintain moderate ductility and sufficient strength. and are desirable.
  • As-drawn black wire has no ductility (elongation) and curls strongly due to distortion during processing, which may make it unusable.
  • Annealing heat treatment is performed. Generally, the higher the temperature and the longer the heat treatment, the lower the strength and the higher the ductility. Since they differ, it is necessary to select the heat treatment conditions according to the wire diameter and composition. In addition, this heat treatment promotes recrystallization and grain growth, but when the crystal grain size approaches the wire diameter, both strength and ductility drop significantly. Therefore, the selection of ripening conditions is especially important for small diameter wires.
  • FIG. 1 is a graph showing heat treatment conditions for securing a breaking strength of 4 gr or more in a wire containing Cu and having a wire diameter of 10 m.
  • the solid line shows the case of 400 eC
  • the dashed line shows the case of 200 eC.
  • the addition of Ca , Be , Ge , La , and In which are also used for adding conventional gold bonding wires , is useful in the present invention .
  • Improves bonding strength of bonding wire is useful in the present invention .
  • one or more of these elements may be added in a total amount of 0.0003 to .01 wt%. Degiru.
  • the bonding wire of the present invention is produced by melting and forging an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by drawing and aging.
  • a wire of the desired wire diameter is manufactured by carrying out such processes.
  • the first A material with added elements as shown in the ⁇ table It was melted in a vacuum melting furnace, and subjected to wire drawing and aging. Wire diameter is 10 m, some are 12
  • a test piece with a gauge length of 100 mm was used for the tensile test.
  • the bonding strength is measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 in the direction of the arrow as shown in Fig. ⁇ , and then was measured.
  • Table 1 compares the wire fracture load, elongation, and fracture strength after bonding with those of the comparative materials.
  • the wire of the present invention has excellent breaking strength and bonding strength in spite of its small diameter.
  • a wire with higher strength can be obtained.
  • the wire of the present invention is excellent in breaking strength and bonding strength , and in particular , compared to conventional wires , it has a diameter as small as 10 Um .

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Abstract

A bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2), which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 mum in diameter.

Description

明 細 書 発明 の 名称 Description Title of Invention
半導体素子用 ポ ンデイ ン グ ワ イ ヤ 技術分 野 Bonding wire for semiconductor devices Technological field
本発 明 は半導体素子の電極 と外部 リ 一 ド を接続す る た め に 使用 す る ボ ンディ ン グ ワ イ ヤ に 関 す る 。 背景技術 The present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
従来 、 半導体素子の電極 を外部 リ ー ド に接続 す る た め に 、 A u に 微量の C a， B e , G eな ど を 含有さ せ た A u合金の線径 2 5〜 5 0 ^ m の ワ イ ヤ 、 す なわ ち ポ ン デ イ ン グ ワ イ ヤ が用 い ら れて い る 。 Conventionally, in order to connect the electrodes of a semiconductor element to external leads, Au alloy wires containing trace amounts of Ca, Be, Ge, etc. have been used with a wire diameter of 25 to 50 mm. ^ m wire, i.e., a bonding wire, is used.
こ の ワ イ ヤを用 い て半導体素子 と リ ー ド フ レ ー ム を接 続 す る際 に 、 両者 と も超音波 に よ る圧接か 、 半導体素子 の電極 につ いて は 、 ア ー ク で先端 を ポ ー ル ア ッ プ し た 後 熱圧着 す る方法 が と ら れて い る 。 When this wire is used to connect the semiconductor element and the lead frame, both are pressure-welded by ultrasonic waves, or the electrodes of the semiconductor element are connected by arc welding. A method is adopted in which the tip is poled up and then thermally crimped.
し か し な が ら 、 近年 I Cよ り 一層 の小型化 、 集積化 が お こ なわ れ、 電極数の 増加 の た め 、 現状 ワ イ ヤ径で は 、 電極 の 占 める面積が大き く な り すぎる こ と が 問題視さ れ る よ う に なっ て き た 。 こ の 問題 を解決す る た め に は 、 ヮ ィ ャ 径を細 く する こ と が必要で あ る が 、 現状の ワ イ ヤ を 細 く し た ので は 、 配線時及び使用 中 に 断線の割合 が高 く 実用 に供 し えな い 。 その た め現状ワ イ ヤで は 、 ボ ンディ ン グヮ ィ ャ の特性 と し て は線径 2 0 m 程度.が限界であ る と さ れて い た 。 However, in recent years, ICs have become smaller and more integrated, and the number of electrodes has increased. Overuse has become a problem. In order to solve this problem, it is necessary to make the diameter of the wire thinner. The ratio is too high for practical use. For this reason, with current wire, the maximum wire diameter of about 20 m was thought to be the limit of the characteristics of the bonding wire.
特開 昭 5 6— 4 9 5 3 4 号公報及び特開 昭 Ρ 5 6 - 4 9 5 3 5 号公報では P t を 、 3 0 wt % ま で 、 あ る い は Ρ d を 4 〇 ％ まで A u に加 える こ と に よ り ワ イ ャ の髙強度 化を はか り 、 細線化を可能 に する と い う 提案ちある が 、 合金元素の含有量がある限界を越え る と ポ ー ルの硬さ が 増 し 、 熱圧着 に 必要な荷重が大き く な り 、 I C の シ リ コ ンチップに損傷を与える等の 問題が起きる 。 特開 昭 6 0 一 1 5 9 5 8 号公報では A ·2 に異種元素を混入 し た電極 配線に対 し て良好な熟圧着性を有する ポ ンデ イ ング ワ イ ャ と し て A u 基の合金ワ イ ヤ が提案さ れて い る が 、 これ も同様の 問題が あ り 、 従来か ら採用 さ れて いる I C 、 及 ぴ接合方法を特別 に変更する こ とな く 、 I C の小型化 、 高密度化が はかれる新 し いボンディ ング ワ イ ャ が求め ら れて い る 。 発明 の 開示 In JP-A-56-49534 and JP-A-56-49535, Pt is up to 30 wt %, or Pd is up to 40%. There is a proposal to increase the strength of the wire by adding up to Au to Au, and to make it possible to make the wire thinner. As the hardness of the coil increases, the load required for thermocompression bonding increases, causing problems such as damage to the silicon chip of the IC. In Japanese Patent Application Laid-Open No. 60115958, Au is used as a bonding wire having good crimping property for electrode wiring in which different elements are mixed in A 2. A base alloy wire has been proposed, but it also has the same problem, and the conventionally adopted IC and the joining method are not specially changed, and the IC is improved. There is a demand for a new bonding wire that can be made smaller and more dense. Invention disclosure
本発明で は 、 ボ ンディ ング ワ イ ヤ の線径を こ れま で よ り も細 く し て も従来の ワ イ ヤ と同 じ信頼性を持っ た ワ イ ャ を提供する こ と を 目 的 とする 。 ま た 、 本発明 の他の 目 的と し て は、 製造時に おい て も強度がつ よ く て極細線に する こ と が可能で 、 接合時の破断強度に優れた 断線の極 めて少ない半導体素子用 ボンディ ング ワ イ ヤ を提供 し よ う と するも のであ る 。 図面 の簡単 な説明An object of the present invention is to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. target. Further, as another object of the present invention, it is possible to form a very fine wire with high strength even during manufacturing, and to achieve excellent breaking strength at the time of bonding and to achieve extremely low breakage. The object is to provide a bonding wire for semiconductor devices. Brief description of the drawing
M ' 1 図 は C u を 含有 し た.本発明 の ボ ン デ ィ ン グ ワ イ ヤ の破断強度 に 関 し 、 C U 含有量 と熱処理 し 条件 と の 関連 を示 し た グ ラ フ で あ り 、 Fig. M'1 is a graph showing the relationship between the Cu content and the heat treatment conditions with respect to the breaking strength of the bonding wire of the present invention containing Cu. the law of nature ,
第 2 図 は 、 接合強度測定 法 の 説明 図で ある 。 発明 の実施 す る た めの最良の形態 FIG. 2 is an explanatory diagram of the bonding strength measuring method. BEST MODE FOR CARRYING OUT THE INVENTION
本発明 の ボ ンデ ィ ング ワ イ ヤ の特徴 は " F記の と お り で あ る The features of the bonding wire of the present invention are as described in section F.
(1) C u を Ί 〜 5 wt %未満 含有 し 、 残部 は A u か ら な る半導休素子用 ボ ン ディ ング ワ イ ヤ 。 (1) A bonding wire for a semiconductor element containing Ί to less than 5 wt % of Cu, the balance being Au.
(2) C u を 1 〜 5 wt%未満 と 、 C a , G e , B e , し a ， I n の Ί 種 ま た は 2 種以上を合計で 0 . 0 0 0 3 〜 0 . 0 1 wt%含有 し 、 残部 は A u か ら な る半導体素子 用 ボ ンデ ィ ン グ ワ イ ヤ 。 (2) Less than 1 to 5 wt% of Cu and 0.0003 to 0.0 in total of Ί species or two or more of Ca, Ge, Be, and In A bonding wire for a semiconductor device containing 1 wt% and the balance being Au.
(3) C u を Ί 〜 5 wt %未満 と 、 P t を Ί 〜 5 wt %未満 含有 し 、 残部 は A u か ら な る半導体素子用 ボ ン デ ィ ング フ ィ ャ 。 (3) A bonding finger for a semiconductor device containing Ί to less than 5 wt % of Cu, Ί to less than 5 wt % of Pt, and the balance being Au.
(4) C u を 1 〜 5 wt %未満 と 、 P t を 1 〜 5 wt %未満 と 、 C a , G e , B e , L a , I n の 1 種 ま た は 2 種以 上を合計で 0 . 0 0 0 3 〜 0 . 0 1 ^%含有 し 、 残部 は A u か ら な る半導体素子用 ポ ン デ イ ン グ ワ イ ヤ 。 (4) Less than 1 to 5 wt % of Cu, less than 1 to 5 wt % of Pt, and one or more of Ca, Ge, Be, La, and In A bonding wire for a semiconductor device containing 0.0003 to 0.01% in total and the balance being Au.
本発 明 の半導休素子用 ポ ンデ イ ン グ ワ イ ヤ に お い て 、 A u に C u を Ί 〜 5 wt %未満含有さ せ た 理 由 は 、 C u が A u に 完全 に 固溶 する こ と に よ り 、 母線の 強度が 向上す る ばか り か接合強度も髙く なる から で 、 こ れまでの ワ イ ャで はなか なか難 し かっ た線径 2 0 ^ m 以下の細線に し ても 、 〇 u が 1 %以上含有さ れて いれば、 破断強度 4 g r 以上を篛足する こ と が出来る 。 こ の特徴 は 、 C u の含有 量の増加 と と も に強度の上昇が認め ら れる が 、 5 % を越 える と耐食性に問題を生 じ 、 長時間 を経た後での信潁性 を擤な う 。 ま た 、 G u の含有量が 5 %に達す る と接合時 に形成する ボールの硬さ が増加 し 、 熱圧着 に必要な荷重 が大き く な る こ と から シ リ コ ン チップ に 損傷を与え る た めで あ る 。 In the bonding wire for a semiconductor element of the present invention, the reason why Cu is contained in Au in an amount of Ί to less than 5 wt % is that Cu is completely contained in Au. The strength of the bus bar is improved by dissolving in the This is because it not only increases the bonding strength, but also makes it possible to make a fine wire with a wire diameter of 20 m or less, which was quite difficult with conventional wires, and the content of 〇u is 1% or more. A breaking strength of 4 gr or more can be added if As for this feature, the strength increases as the Cu content increases. Now In addition, when the Gu content reaches 5%, the hardness of the ball formed during bonding increases, and the load required for thermocompression bonding increases, causing damage to the silicon chip. to give.
なお 、 原料 とな る A u 、 C u は不純物 の含有量が多い と製品 の特性が不安定 と な る こ と と 、 細線化や接合時に 破断の原因 となるので 、 9 9 . 9 %以上の髙純度 と す る こ と が好ま し い 。 In addition, if the content of impurities in the raw material Au and Cu is high, the characteristics of the product will become unstable, and it will cause breakage during thinning and joining. It is preferable to use a high purity of
G u の 含有に よっ て こ の よ う な効果が得 ら れる の は 、 固溶体強化 と規則格子の生成に よ っ て い る と 推察さ れる < なお 、 P t は 、 この効果を肋長す る働きをする 。 その含 有量は 、 1 〜 5 wt%未篛の範囲で 、 そ れ未満で は効果が な く 、 上限を越える と延性の減少や ボ ー ルの硬さ の増加 とい う 不都合が生ず る 。 It is inferred that the reason why such an effect is obtained by the inclusion of Gu is due to solid solution strengthening and the formation of an ordered lattice. It works. Its content is in the range of 1 to 5 wt% unfilled. If it is less than that, there is no effect. .
伸線時 に導入された加工歪を 除き 、 適度な延性と十分 な強度を保持する た め に 、 2 0 0〜 6 0 0 °Cの温度 と適 切 な時間 の熱処理を行う こ とが望ま し い 。 It is desirable to heat treat at a temperature of 200 to 600°C for an appropriate time in order to remove the working strain introduced during wire drawing and maintain adequate ductility and sufficient strength. Shii
伸線ま ま の翊線は延性 （ 伸び ） がな く 、 ま た加工歪の た め カ ールが強 く 、 使用 に供せ な い こ と が あ るので通常 は焼な ま し 熱処理を行 う 。 熱処理の 温度が高い ほ ど 、 長 時間で あ る ほ ど強度が低下 し 、 延性が大き く な る の が一 般旳で あ る が 、 そ の程度 は合金成分 の含有量 に よ っ て 異 な る の で 、 線径 と成分 に 応 じ た 熱処理条件を選ぶ必要が あ る 。 ま た 、 こ の熱処理に よ っ て 組織の再結晶 、 粒成長 が進行 す る が結晶粒径が線径 に 近づ く と強度 、 延性 と も に い ち じ る し く 低下 す る た め 、 熱処理条件の選定 は細径 ワ イ ヤ の場合 は特 に重要で あ る 。 As-drawn black wire has no ductility (elongation) and curls strongly due to distortion during processing, making it unusable. Annealing heat treatment is performed. Generally speaking, the higher the heat treatment temperature and the longer the heat treatment time, the lower the strength and the higher the ductility, but the extent varies depending on the content of the alloy components. Therefore, it is necessary to select the heat treatment conditions according to the wire diameter and composition. In addition, this heat treatment promotes recrystallization of the structure and grain growth, but when the grain size approaches the wire diameter, both strength and ductility decrease significantly. The selection of heat treatment conditions is particularly important in the case of small-diameter wires.
第 1 図 は 、 C u を含有 し た線径 1 0 m の ワ イ ヤ で 4 gr以上 の破新強度を確保す る 熱処理条件を示 し た グ ラ フ で あ る 。 実線 は 4 0 0 °C、 破線 は 2 0 0 °Cで処理 し た 場 合 を 示 し て いる 。 Fig. 1 is a graph showing the heat treatment conditions under which a wire containing Cu and having a wire diameter of 10 m secures a fracture strength of 4 gr or more. The solid line indicates the case of treatment at 400°C, and the dashed line indicates the case of treatment at 200°C.
ま た 、 特 に 、 従来の金ボ ン デ ィ ン グワ イ ヤ の 添加 に も 用 い ら れて い る C a , B e , G e , L a , I n の 添加 は 本発明 の ボ ンディ ング ワ イ ヤ の接合強度を 向上さ せ る 。 こ の 目 的のた め に 、 こ れ ら の元 素の 1 種 ま た は 2種以上 を合計で 0 . 0 0 0 3 〜◦ . 0 1 ^%の範囲で 添加 す る こ と がでさ る 。 In particular , the addition of Ca , Be , Ge , La , and In , which are also used in addition to conventional gold bonding wires , is useful for the bonder of the present invention . improve the bonding strength of the connecting wire. For this purpose, one or more of these elements can be added in a total amount in the range of 0.0003 to ◦.01%. monkey
本発 明 の ポ ンデイ ング ワ イ ヤ は 、 真空溶解炉等を 用 い て 本発明 に し た がっ た 化学成分の A u 合金を 溶解 し 铸造 し た 後 、 線引 、 熟処理等 を お こ なっ て 所望の線径の ワ イ ャ に 製造さ れる 。 The bonding wire of the present invention is produced by melting and forging an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by wire drawing, aging treatment, and the like. A wire of the desired wire diameter is thus produced.
つ ぎ に 、 本発明 の効果を 明瞭 に す る実施例 を説明 す る 純度 9 9 . 9 9 % の高純度 A n と純度 9 9 . 9 %の高 純度 C u を用 い 、 第 1 表 の よ う な元 素を 添加 し た材料を 真空溶解炉で溶製 し 、 線引 、 熱処理を お こ なっ た 。 線径 は 1 0 m 、 一部 は 、 1 2 m 、 1 5 m 、 9 m 2 5 m 、 3 0 m であ る。 Next, using a high-purity An of 99.99% purity and a high-purity Cu of 99.9% purity, Table 1 A material added with elements such as It was melted in a vacuum melting furnace, drawn, and heat-treated. The wire diameter is 10m, some are 12m, 15m, 9m25m, 30m.
引っ張り 試験 はゲー ジ長 1 0 0 顺の試験片を用 いた 。 接合強度は第 1 図 に示す よ う に S i チップ 1 と リ ー ド フ レ ーム 2 に接合 し たポ ンディ ングワ イ ヤ 3 を 図 に示す よ う に矢印方向 に 引 っ 張 り 、 その とぎの破断強度を測定 し た 。 ワ イ ヤ の破断荷重、 伸び と接合後の破断強度を比較 材 と対比 し た第 1 表 に示す 。 For the tensile test, test pieces with a gauge length of 100 order were used. The bonding strength was measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 as shown in Fig. 1 in the direction of the arrow. The breaking strength of the sharpener was measured. Table 1 compares the wire breaking load, elongation and breaking strength after bonding with those of the comparative materials.
第 "！ 表か ら 明 ら かな よ う に 、 本発明 ワ イ ャ は 、 細径に も かかわ ら ず破断強度及び接合強度が優れて い る こ とが わかる 。 ま た 、 従来の ポ ンデイ ングワ イ ヤ と 同様の線径 で使甩すれば 、 よ り 強度の高い ワ イ ヤ が得 ら れる 。 As is clear from Table 1, the wire of the present invention has excellent breaking strength and bonding strength in spite of its small diameter. If you use the same wire diameter as the ear, you will get a wire with higher strength.
第 1 表 化学成分 (wt%) 線 ί? 引 張 試 験 ί ·Α裕の Table 1 Chemical composition (wt%) Line ί?
Γ細 ί¾ίδ庇 Γ thin ί¾ίδ eaves
Au Cu Ρΐ Ca Ge Be し 8 I n 破断強度 (g) 仲びは） (q) Au Cu Ρΐ Ca Ge Be 8 In breaking strength (g) (q)
\y \y
漏 I 1 残 1 10 4.1 1 1 3 Leak I 1 Remainder 1 10 4.1 1 1 3
" Cm 残 1.2 1 10 V 4.4 4 9 ft CMM \j / 残 2 0.0004 10 4.3 6 ¾ 2 // 残 2 0.0008 0.0014 0.0024 10 4.2 5
Figure imgf000009_0001
残 3 10 4.7 12 ¾ ft " Cm rest 1.2 1 10 V 4.4 4 9 ft CMM \j / rest 2 0.0004 10 4.3 6 ¾ 2 // rest 2 0.0008 0.0014 0.0024 10 4.2 5
Figure imgf000009_0001
remaining 3 10 4.7 12 ¾ ft
C\i\l KJ J J 残 4 0.0042 in 6.4 9 // η 7 残 4 2 0.0011 0.0042 0.0018 0.0014 0.0012 10 7.2 7 4 4 // 8 残 2 4 0.0028 15 12.2 3 4.7 // 9 残 2 0.0004 0.0012 15 10.5 3 4.9 // w 10 残 2 3 19 17.4 11 5.4 220で X15 C\i\l KJ J J Balance 4 0.0042 in 6.4 9 // η 7 Balance 4 2 0.0011 0.0042 0.0018 0.0014 0.0012 10 7.2 7 4 4 // 8 Balance 2 4 0.0028 15 12.2 3 4.7 // 9 Balance 2 0.0004 0.0012 15 10.5 3 4.9 // w 10 remaining 2 3 19 17.4 11 5.4 at 220 X15
" 11 残 2 3 0.0062 19 17.4 11 5.4 220°GX15" 11 Remaining 2 3 0.0062 19 17.4 11 5.4 220°GX15
" 12 残 2 0.0028 15 10.2 3 4.7 // 13 残 2 0.0022 25 19.3 8 6.7 //" 12 remaining 2 0.0028 15 10.2 3 4.7 // 13 remaining 2 0.0022 25 19.3 8 6.7 //
" 14 残 2 0.0043 30 24.4 5 10.2 //" 14 remaining 2 0.0043 30 24.4 5 10.2 //
" 15 残 3 15 13.2 4 6.8 450°GX 5秒" 15 remaining 3 15 13.2 4 6.8 450°GX 5 seconds
" 16 残 3 0.0008 0.OO21 0.0013 19 17.3 5 8.7 " 16 Balance 3 0.0008 0.OO21 0.0013 19 17.3 5 8.7
表 つづき- Table continued-
Figure imgf000010_0001
Figure imgf000010_0001
接合後の 1 Cチップに掼 が認めら Cracks were observed in the 1C chip after bonding.
産業 上の利用 可 能性 Industrial applicability
以上説明 し た よ う に 、 本発明 ワ イ ヤ は 、 破断強度及び 接合強度 に 優れ 、 特 に 、 従来の ワ イ ヤ に対 し て 、 1 0 As explained above, the wire of the present invention is excellent in breaking strength and bonding strength, and in particular, is 10% stronger than the conventional wire.
U m の よ う な細径 に し て も従来の ワ イ ヤ以上 に 信頼性の 高 い ワ イ ヤ と し て 高集積化 し た L S I の小型化 に役立つ お ので あ る 。 Even if the diameter is as small as Um, the wire is more reliable than the conventional wire and is useful for miniaturization of highly integrated LSIs.
PCT 世界知的所有権機関 PCT World Intellectual Property Organization
国 際 搴 務 局 International Affairs Bureau
特許協力条約に基づいて公開された国際出願 International applications published under the Patent Cooperation Treaty
(51)国際特許分類 4 (51) International Patent Classification 4
体^ Ϊ〇 n (ID国際公開番号 WO 89/11161 Body^Ϊ〇n (ID International Publication No. WO 89/11161
H01L 21/60, C22C5/02 H01L 21/60, C22C5/02
A1 A1
(43)国際公開日 1989年 11月 16日（16.11.89) (43) International publication date November 16, 1989 (16.11.89)
(21) 国際出願番号 PCT/JP89 O0463 (21) International Application No. PCT/JP89 O0463
(22) 国際出願曰 1989年 5月 2曰 （ 02. 05. 89) (22) International filing date May 2, 1989 (02.05.89)
(30) 優先権データ (30) Priority data
-109587 1988年 5月 2曰 （02. 05. 88) JP -109587 May 2, 1988 (02. 05. 88) JP
(71 ) 出願人（*aを除くすべての指定国 つ て） (71) Applicant (for all designated countries except *a)
新日: 会社 New day: company
(NIPPON STEEL OOBPOBATI O ) JP/JP D (NIPPON STEEL OOBPOBATI O) JP/JP D
flOO 棘都千 ¾B区大 W二丁目 6番 3号 Tokyo, (JP) flOO Tosento ¾B Ward Dai W 2-chome 6-3 Tokyo, (JP)
(72) 発明者；および (72) inventor; and
(75) 発明者/出願人（米国につ てのみ） (75) Inventor/Applicant (for US only)
恭秀 CONO, Yasuhide)CJP/JPD Yasuhide (CONO, Yasuhide) CJP/JPD
大関芳雄 COZBKI, Yoshi o)CJP/JPD Yoshio Ozeki COZBKI, Yoshi o)CJP/JPD
〒100 東京都千代田区大手町二丁目 6番 3号 新日本製戴 fe*会社内 〒100 2-6-3 Otemachi, Chiyoda-ku, Tokyo
Tokyo, CJP) Tokyo, CJP)
(74) 代理人 (74) Agent
弁理士 浅村 皓， 外（ASA UBA, Ki yo shi et al. ) Patent Attorney Hiroshi Asamura (ASA UBA, Ki yo shi et al.)
〒100 ¾S都千代田区大 2丁目 2番 1号 新大手町 33 i I
Tokyo, (JP) Tokyo, (US)
(81) 指定国 (81) Designated country
DE, GB, KR, US. DE, GB, KR, US.
添付公開蒈類 国際驟査報告害 Attached publications International investigation reports
(54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS (54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS
(54)発明の名称 半導体素子用ポンディ ングワイヤ ホ デイン ィャの破断強度に及 i (54) Title of Invention Breaking strength of bonding wire housing for semiconductor devices
RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME
Cu含有量と熱処理時間の閉係 AFFECTING BREAK STRENGTH OF BONDING WIRE AFFECTING BREAK STRENGTH OF BONDING WIRE
Figure imgf000017_0001
Figure imgf000017_0001
(57) Abstract 熱処理時間 （分） HEATINCMREATINGllME nin) (57) Abstract Heat treatment time (min) HEATINCMREATINGllME nin)
A bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2)， which comprises 1 to less than 5 wt% of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μτη in diameter. A bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2), which comprises 1 to less than 5 wt% of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μτη in diameter.
PCTガゼッ ト番号 No.04/1990,セクシ ョン Π参照 (57)要約 この発明 は、 半導体素子の電極を外部 リ ー ド （ 2 ) に 接続する ため のポ ンデイ ングワ イ ヤ （ 3 ) に 関 し 、 該ポ ンデイ ングワ イ ヤ （ 3 ) は 1 〜 5 w t %未満の C u と 、 残 部 A u 及び不可避不純物か ら成 り 、 且つ破断強度及び接 合強度に侵れ、 1 0 m 程度の細径に し て も信頼性の高 い接続を得る こ とを可能 に する 。 See PCT Gazette No. 04/1990, section Π (57) Abstract This invention relates to a bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2). Consisting of less than wt % of Cu, the balance being Au and unavoidable impurities, having good breaking strength and bonding strength, and obtaining a highly reliable connection even when the diameter is as small as about 10 m. make it possible.
NNRSSSSTTU NNRSSSSTTU
憒報 しての用途のみ Only for use as an apology
PCT —ド に基づいて公閉される国際出頃刀パンフレ ツ ト第 1頁に PCT¾盟国を同定するために使用される PCT — used to identify the PCT ¾ member states on page 1 of the International Sword Brochure published under the
ML マリ ML Mali
A ォ一ス ト リア FI フ ィ ンラン ド MR モー一リ タニア A Fostoria FI Finland MR Moritania
AU オース ト ラ リァ FR フランス AU Australia FR France
BB バルバー ドス GA カ ボン MWマラ ィ BB Valver dos GA Cabon MW Mara
BE ベルギー GB イ ギ ス オラ ンダ BE Belgium GB England Netherlands
ノ ルゥ No Ru
BG - 'レガリア HU ハンガリ— BG - 'Regalia HU Hungary—
ル一マニ一ア Rumania
BJ へナン I ィタ リ一 BJ Henan I Italy
ス一ダン sudan
BR ル JP 日本 BR Le JP Japan
CF 中央ァフリ力共和国 KP軺鲜民主主義人民共和国 スゥ 一デン CF Central African Republic KP Sudan Democratic People's Republic
GG コ ンゴー KR大幃民国 セ冬ガル GG Congo KR Greater Republic of Korea SEWONGAL
CH ズイ ス LI リ ヒテンシュタ イ ン ソ ビエ ト速邦 CH ZUIS LI Liechtenstein in Soviet Union
CM 々 ズ ーン LK スリ ランカ チヤ一ド CM Zun LK Sri Lanka Chaid
DE S I· <ツ LU ルクセンブルグ トーゴ DE S I LU Luxembourg Togo
DK デ マ—ク MCモナュ 米国 DK Demark MC Monu USA
ES スヘイ ン MGマダガスカル ES Shain MG Madagascar
明 TO 発 明 の 名称 Ming TO Name of invention
半導体 素子用 ボ ンデ ィ ン グ ワ イ ヤ 技術分野 Bonding wire for semiconductor devices Technological field
本発 明 は半導体素子の電極 と 外部 リ 一 ド を接続 す る た め に 使用 す る ボ ンデ ィ ン グ ワ イ ヤ に 関 す る 。 背景技術 The present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
従来 、 半導体 素子の電極 を 外部 リ ー ド に 接続 す る た め に 、 A U に 微量の〇 a , B e ， G e な ど を 含有 さ せ た A u 合金の線径 2 5〜 5 0 m の ワ イ ヤ 、 す な わ ち ボ ン デ ィ ン グ ワ イ ヤ が 用 い ら れ て い る Conventionally, in order to connect the electrodes of a semiconductor element to external leads, Au alloy wire diameters of 25 to 50 m, in which trace amounts of OA, Be, Ge, etc. are added to Au, have been used. wire, i.e. bonding wire, is used
こ の ワ イ ヤ を用 い て 半導体素子 と リ ー ド フ レ ー ム を 接 杭 "5 る際 に 、 両者 と ち超 音波 に よ る 圧接 か 、 半導体 素子 の 電極 につ ヽて は 、 ア ー ク で 先端 を ボ ー ル ア ッ プ し た 後 熱圧着 す る方法 が と ら れて い る 。 When this wire is used to join the semiconductor element and the lead frame together, the two may be pressure-welded by ultrasonic waves, or, as for the electrodes of the semiconductor element, contact may be made. A method is adopted in which the tip is balled up with a seal and then thermocompression is performed.
し か し な が ら 、 近年 I C よ り一層 の小型化 、 集積化が お こ なわ れ 、 電極数の 増加 の た め 、 現状 ワ イ ヤ 径で は 、 電極 の 占 め る面積が大き く な り すぎる こ と が 問題視 さ れ る よ う に な っ て ぎ た 。 こ の 問題を解決 す る た め に は 、 ヮ ィ ャ 径 を細 く する こ と が必要で あ る が 、 現状の ワ イ ヤ を 細 く し た ので は 、 配線時及び使用 中 に 断線の割合 が高 く 実用 に 供 し えな い 。 その た め現状 ワ イ ヤで は 、 ボ ンディ ング ワ イ ヤ の特性 と し て は線径 2 0 m 程度が限界で あ る と さ れて い た 。 In recent years, however, ICs have become smaller and more integrated, and the number of electrodes has increased. Too much has become a problem. In order to solve this problem, it is necessary to make the diameter of the wire thinner. The ratio is too high for practical use. For this reason, in the current state of the wire, it was said that the wire diameter of about 20 m was the limit in terms of the characteristics of the bonding wire.
特開 昭 5 6 — 4 9 5 3 4号公報及び特開 昭 P 5 6— 4 9 5 3 5号公報で は P tを 、 3 0 wt % ま で 、 あ る い は P dを 4 0 %まで A u に加え る こ と に よ り ワ イ ヤ の髙強度 化を はか り 、 細線化を可能 に す る と い う 提案も あ る が 、 合金元素の含有量が あ る 限界を越える と ポ ー ルの硬さ が 増 し 、 熱圧着 に 必要な荷重が大き く な り 、 I Cの シ リ コ ンチップに損傷を与える 等の 問題が起き る 。 特閗 昭 6 0 一 Ί 5 9 5 8号公報で は に異種元素を混入 し た電極 配線 に 対 し て 良好な熱圧着性 を有する ボ ンデ ィ ン グ ワ イ ャ と し て A u基の合金ワ イ ヤ が提案さ れて い る が 、 こ れ も周様の 問題が あ り 、 従来か ら 採用 さ れて い る I C、 及 ぴ接合方法を特別 に 変更す る こ と な く 、 I Cの小型化 、 高密度化が はかれる新 し い ボ ンディ ング ワ イ ヤ が求め ら れて いる 。 発明 の開示 In JP-A-56-49534 and JP-A-56-49535, Pt is up to 30 wt %, or Pd is up to 40 wt %. There is a proposal to increase the strength of the wire by adding up to % of Au to Au, and to make it possible to make the wire thinner, but the content of the alloying element is a certain limit. If it exceeds, the hardness of the pole increases, the load required for thermocompression bonding increases, and problems such as damage to the silicon chip of the IC occur. In Japanese Patent Publication No. 601-5958, an Au-based bonding wire is used as a bonding wire having good thermocompression bonding properties for electrode wiring mixed with different elements. alloy wire has been proposed, but it also has a problem with the circumference, and without any special change in the conventionally adopted IC and joining method, There is a demand for a new bonding wire that can make ICs smaller and more dense. Invention disclosure
本発明では 、 ボ ンディ ングワ イ ヤ の線径を こ れ ま で よ り も細 く し て も従来の ワ イ ヤ と同 じ信頼性を持っ た ワ イ ャを提供する こ とを 目 的 と す る 。 ま た 、 本発明 の他の 目 的 と し て は 、 製造時におい て も強度がつ よ く て極細線 に する こ とが可能で 、 接合時の破断強度 に 優れた 靳線-の極 め て少ない半導体素子用 ボンディ ングワ イ ヤ を提供 し よ う と す るものであ る 。 図面 の 簡 単な説明 An object of the present invention is to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. do . Another object of the present invention is to develop a fine wire that has a high strength even during production, can be made into an extra-fine wire, and has excellent breaking strength at the time of bonding. It is intended to provide a bonding wire for semiconductor devices with less cost. Brief description of the drawing
第 Ί 図 は C u を 含有 し た 本発明 の ボ ン デ ィ ン グ ワ イ ヤ の破断強度 に 関 し 、 C U 含有量 と 熱処理 し 条件 と の 関連 を示 し た グ ラ フ で あ り 、 Fig. Ί is a graph showing the relationship between the CU content and the heat treatment conditions with regard to the breaking strength of the bonding wire of the present invention containing Cu;
第 2 図 は 、 接合強度測定 法 の 説明 図で あ る 。 発明 の実施 す る た め の最良 の形態 FIG. 2 is an explanatory diagram of the bonding strength measuring method. BEST MODE FOR CARRYING OUT THE INVENTION
本発明 の ボ ン デ ィ ン グ ワ イ ヤ の特徴 は ^記 の と お り で あ る 。 The features of the bonding wire of the present invention are as described below.
(1) C u を Ί 〜 5 wt %未満' 含 有 し 、 残部 は A u か ら な る 半導体素子用 ボ ン ディ ン グ ワ イ ヤ 。 (1) A bonding wire for a semiconductor device containing Ί to less than 5 wt % of Cu and the balance being Au.
(2) C u を Ί 〜 5 wt %未満 と 、 C a , G e , B e ， L a , レ n の 1 種ま た は 2 種 以上 を合計で 〇 . 0 0 0 3 〜 0 , 0 1 wt % 含有 し 、 残部 は A u か ら な る 半導体素子 用 ボ ン デ ィ ン グ ワ イ ヤ 。 (2) Ί to less than 5 wt % of Cu and one or more of Ca, Ge, Be, La, and Ren, totaling 0.0003 to 0.0 A bonding wire for a semiconductor device containing 1 wt % and the balance being Au.
(3) G u を Ί 〜 5 wt %未満 と 、 P t を Ί 〜 5 wt %未満 含有 し 、 残部 は A u か ら な る半導体素子用 ボ ン デ ィ ン グ ワ イ ヤ 。 (3) A bonding wire for a semiconductor device containing Ί to less than 5 wt % of Gu, Ί to less than 5 wt % of Pt, and the balance being Au.
(4) C u を "！ 〜 5 wt %未満 と 、 P t を Ί 〜 5 wt %未 ¾ と 、 C a , G e , B e , L a , I n の 1 種 ま た は 2 種以 上を合計で 0 . 0 0 0 3 〜 0 . 0 1 wt%含有 し 、 残部 は A u か ら な る 半導体素子用 ボ ンデ ィ ン グ ワ イ ヤ 。 (4) Cu less than ! ~ 5 wt%, Pt less than Ί ~ 5 wt%, and one or more of Ca, Ge, Be, La, and In A bonding wire for a semiconductor device containing the above in a total amount of 0.0003 to 0.01 wt% and the balance being Au.
本発 明 の半導体 素子用 ボ ンデ ィ ン グ ワ イ ヤ に お い て 、 A u に C u を 1 〜 5 wt % 未満含有さ せ た 理 由 は 、 C u が A u に 完全 に 固 溶 す る こ と に よ り 、 母線. の強度が 向上す る ばか り か接合強度も髙 く なるか ら で 、 こ れ ま での ワ イ ャで は なかなか難 しかっ た線径 2 0 m 以下の翻線 に し て も 、 C u が 1 %以上含有さ れて い れば、 破断強度 4 g r 以上を満足する こ と が出来る 。 こ の特徴 は 、 C u の含有 量の増加 と と も に強度の上昇が認め ら れる が 、 5 % を越 える と耐食性 に問題を生 じ 、 長時間 を経た後での信頼性 を損な う 。 ま た 、 C u の含有量が 5 % に達す る と接台時 に形成す る ポールの硬さ が増加 し 、 熱圧着 に 必要な荷重 が大き く な る こ と か ら シ リ コ ンチップ に 損傷 を与える た めで あ る 。 In the bonding wire for a semiconductor device of the present invention, the reason why Cu is contained in Au in an amount of less than 1 to 5 wt % is that Cu is completely solidified in Au. The melting improves the strength of the bus bar. Not only does this increase the bonding strength, but it is also difficult to make wire with a wire diameter of 20 m or less, which was difficult with conventional wires. If it is, it is possible to satisfy the breaking strength of 4 gr or more. This feature shows that the strength increases as the Cu content increases. cormorant . In addition, when the Cu content reaches 5%, the hardness of the pole formed at the time of mounting increases, and the load required for thermocompression bonding increases. This is to inflict damage.
な お 、 原料 とな る A u 、 C u は不純物 の含有畺が多い と 製品の特性が不安定 と な る こ と と 、 細線化や接合時 に 破断の原因 となるので 、 9 9 . 9 ?/0以上の高純度 と す る こ と が好 ま し い 。 If the raw materials Au and Cu contain a large amount of impurities, the characteristics of the product will become unstable, and it will cause breakage during thinning and joining. It is preferable to have a high purity of ?/ 0 or higher.
C u の 含有 に よっ て こ の よ う な効果が得 ら れる の は 、 固溶体強化 と規則格子の生成 に よ っ て い る と 推察さ れる c な お 、 P t は 、 この効果を助長す る働き を す る 。 そ の含 有量は 、 1 〜 5 w t %未篛の範囲で 、 そ れ未満で は効果が な く 、 上陧を越える と延性の減少や ポ ー ルの硬さ の増加 と い う 不都合が生ず る 。 It is inferred that the reason why such an effect is obtained by the inclusion of Cu is due to the solid solution strengthening and the formation of an ordered lattice. work to Its content is in the range of 1 to 5 wt % unfilled. occur.
伸線時 に導入された加工歪を 除き 、 適度な延性 と十分 な強度を保持す る ため に 、 2 0 0 〜 6 0 0 °G の温度 と適 切 な 時間の熱処理を行 う こ と が望 ま し い 。 Heat treatment at a temperature of 200 to 600°G for an appropriate time is recommended in order to remove the working strain introduced during wire drawing and to maintain adequate ductility and sufficient strength. desirable.
伸線 ま ま の細線は延性 （ 伸び ） がな く 、 ま た加 工歪の た め カ ールが強 く 、 使用 に供せ な い こ と が あ るので通常 は焼な ま し 熱処理を行 う 。 熱処理の 溫度が高 い ほ ど 、 長 時 間 で あ る ほ ど強度 が低下 し 、 延性 が 大き く な る の がー 設的で あ る が 、 そ の程度 は合金成分 の 含有量 に よ っ て 異 な る ので 、 線径 と 成分 に 応 じ た 熱処理条件を選ぶ必要 が あ る 。 ま た 、 こ の熱処理 に よ っ て 組織の再結晶 、 粒成長 が進行 す る が結晶粒径が線径 に 近づ く と 強度 、 延性 と も に い ち じ る し く 低下 す る た め 、 熱処理条件の選定 は細径 ワ イ ヤ の場合 は特 に 重要で あ る 。 As-drawn fine wire has no ductility (elongation) and curls strongly due to working distortion, which may make it unusable. Annealing heat treatment is performed. Generally, the higher the heat treatment temperature and the longer the heat treatment time, the lower the strength and the higher the ductility. Therefore, it is necessary to select the heat treatment conditions according to the wire diameter and composition. This heat treatment promotes recrystallization of the structure and grain growth, but when the grain size approaches the wire diameter, both strength and ductility drop significantly. The selection of heat treatment conditions is especially important in the case of small-diameter wires.
第 Ί 図 は 、 C u を含有 し た 線径 1 0 m の ワ イ ヤ で 4 gr以上 の破 節強度 を確保 す る 熱処理条 件 を 示 し た グ ラ フ で あ る 。 実線 は 4 0 0 °C 、 破線 は 2 0 0 で 処理 し た 場 合 を 示 し て い る 。 Fig. Ί is a graph showing heat treatment conditions for securing a breaking strength of 4 gr or more in a wire containing Cu and having a wire diameter of 10 m. The solid line shows the case of treatment at 400°C and the dashed line shows the case of treatment at 200°C.
ま た 、 特 に 、 従来の金ポ ン デ イ ン グ ワ イ ヤ の 添加 に も 用 い ら れ て い る C a , B e , G e , L a , I n の 添加 は 本発 明 の ポ ンデ イ ン グ ワ イ ヤ の接合強度 を 向 上さ せ る 。 こ の 目 的 の た め に 、 こ れ ら の 元 素 の Ί 種 ま た は 2種以上 を 合計で 0 . 0 〇 0 3 〜 0 . 0 1 wt%の範囲で 添加 す る こ と がで き る 。 In particular , the addition of Ca , Be , Ge , La , and In , which are also used for adding conventional gold bonding wires , is useful in the present invention . Improves bonding strength of bonding wire. For this purpose, the Ί type or two or more types of these elements can be added in a total amount in the range of 0.0003 to 0.01 wt%. Wear .
本発 明 の ポ ンデイ ン グ ワ イ ヤ は 、 真空 溶解炉等を 用 い て 本発明 に し た がっ た 化学成分 の A u 合金 を 溶解 し 錶造 し た 後 、 線引 、 熱処理等 を お こ なっ て 所望 の線径の ワ イ ャ に 製造さ れる 。 The bonding wire of the present invention is produced by melting and casting an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by drawing, heat treatment, and the like. A wire with a desired wire diameter is produced by this process.
つ ぎ に 、 本発 明 の効 果を 明瞭 に す る実施例 を説明 す る 純度 9 9 . 9 9 % の高純度 A u と純度 9 9 . 9 %の高 純度 C u を用 い 、 第 Ί 表 の よ う な 元 素を 添加 し た 材料を 真空溶薛炉で溶製 し 、 線引 、 熱処理を お こ なっ た 。 線径 は 1 0 m 、 一部 は 、 1 2 m 、 Ί 5 m 、 1 9 j" m 、 2 5 ^ m 、 3 0 であ る 。 Next, using high-purity Au with a purity of 99.99% and high-purity Cu with a purity of 99.9%, A material to which elements such as those shown in the Ί table are added It was melted in a vacuum melting furnace, drawn, and heat-treated. The wire diameter is 10m, some are 12m, Ί5m, 19j"m, 25^m, 30.
引っ張 り 試験はゲー ジ長 1 0 0 顺の試験片を 用 いた 。 接合強度 は第 1 図 に示す よ う に S i チップ 1 と リ ー ド フ レ ー ム 2 に接合 し た ポ ンデイ ングワ イ ヤ 3 を 図 に 示す よ う に矢印方向 に 引 っ 張 り 、 その と きの破断強度を測定 し た 。 ワ イ ヤの破断荷重、 伸び と接合後の破断強度を比校 材 と対比 し た第 Ί 表に示す 。 For the tensile test, test pieces with a gauge length of 100 order were used. The bonding strength was measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 as shown in Fig. 1 in the direction of the arrow. The breaking strength was measured when The breaking load, elongation and breaking strength after bonding of the wire are shown in Table Ί in comparison with the comparative materials.
第 Ί 表か ら 明 ら かな よ う に 、 本発明 ワ イ ヤ は 、 細 径に -€> かかわ ら ず破断強度及び接合強度が優れ て い る こ と が わ かる 。 ま た 、 従来の ポ ンデイ ングワ イ ヤ と 同様 の線径 で使用 す れば、 よ り 強度の高い ワ イ ヤ が得 ら れる 。 As is clear from Table Ί, the wire of the present invention is excellent in breaking strength and bonding strength regardless of its small diameter. In addition, if the same wire diameter as conventional bonding wire is used, a wire with higher strength can be obtained.
1 表 化学成分（Wl%) 線 径 引 張 試 験 接合後の 1 Table Chemical composition (Wl%) Wire diameter Tensile test After bonding
破断強 讓 breaking strength
Cu Ρΐ Ca Ge Be し 3 I n 破断強度 (g) 仲び ） (g) 錯例 1 残 1 10 4.1 1 1.3 200 Χ 1Cu Ρΐ Ca Ge Be 3 In Breaking strength (g) (g) Example 1 Remainder 1 10 4.1 1 1.3 200 Χ 1
" 2 残 1.2 1 10 4.4 4 2.8 200 Χ 5" 2 Balance 1.2 1 10 4.4 4 2.8 200 Χ 5
" 3 2 0.0004 10 4.3 6 3.2 " 3 2 0.0004 10 4.3 6 3.2
" 残 1 0.0008 0.0014 0.0024 10 4.2 5 3.6 ■ΌΧ10 " Balance 1 0.0008 0.0014 0.0024 10 4.2 5 3.6 ■ΌΧ10
" b 3 10 4.7 12 3.8 200°Gx15" b 3 10 4.7 12 3.8 200°Gx15
" 6 残 4 0.0042 10 6.4 9 4.1 //" 6 remaining 4 0.0042 10 6.4 9 4.1 //
" 7 残 4 2 0.0011 0.0042 0.0018 0.0.014 0.0012 10 7.2 7 4.4 //" 7 remaining 4 2 0.0011 0.0042 0.0018 0.0.014 0.0012 10 7.2 7 4.4 //
" 8 残 2 4 0.0028 15 12.2 3 4.7 ；；" 8 Balance 2 4 0.0028 15 12.2 3 4.7 ;;
" 9 残 2 0.Ο0ΟΊ 0.0012 15 10.5 3 4.9 //" 9 Balance 2 0.Ο0ΟΊ 0.0012 15 10.5 3 4.9 //
" 10 残 2 3 19 17.4 11 5.4 22(TGx15" 10 remaining 2 3 19 17.4 11 5.4 22(TGx15
〃 11 残 1 3 0.0062 19 17.4 11 5.4 220ΌΧ15〃 11 Balance 1 3 0.0062 19 17.4 11 5.4 220ΌΧ15
" 12 残 2 0.0028 15 10.2 3 4.7 /；" 12 Balance 2 0.0028 15 10.2 3 4.7 /；
〃 13 残 2 0.0022 25 19.3 8 6.7 //〃 13 Balance 2 0.0022 25 19.3 8 6.7 //
" 14 2 0.0043 30 24.4 5 10.2 " 14 2 0.0043 30 24.4 5 10.2
" 15 残 3 15 13.2 4 6.8 450ΌΧ 5 " 15 Balance 3 15 13.2 4 6.8 450ΌΧ 5
" 16 残 3 0.0008 0.0021 0.0013 19 17.3 5 8.7 " 16 Balance 3 0.0008 0.0021 0.0013 19 17.3 5 8.7
1 ¾ つづ 1 ¾ next
Figure imgf000026_0001
Figure imgf000026_0001
接合後の I〇チップに i£iが めら i£i appears on the I○ chip after bonding
産業 上の利用 可 能性 Industrial applicability
以上説明 し た よ う に 、 本発明 ワ イ ヤ は 、 破断強度及び 接合強度 に 優れ 、 特 に 、 従来の ワ イ ヤ に対 し て 、 1 0 U m の よ う な細径 に し て も従来の ワ イ ヤ以上 に 信頼性の 高 い ワ イ ヤ と し て 高集積化 し た L S I の小型化 に役立つ ち ので あ る 。 As explained above, the wire of the present invention is excellent in breaking strength and bonding strength, and in particular, compared with the conventional wire, even if it is as small as 10 Um, As a wire with higher reliability than conventional wires, it is useful for miniaturization of highly integrated LSIs.
国 際 事 務 局 International Secretariat
特許協力条約に基づいて公開された国際出願 International applications published under the Patent Cooperation Treaty
国際特許分類 4 International Patent Classification 4
osczax x*-· . (11)国際公闢番号 WO 89/11161 osczax x*- . (11) International Publication No. WO 89/11161
H01L 21/60, C22C5/02 H01L 21/60, C22C5/02
A1 A1
(43)国際公開曰 年 11月 16日 .(16.11.89) (43) Date of International Publication: November 16, 2016.(16.11.89)
(21) 国際出顏番■§· PCT/JP89/00463 (21) International filing number § PCT/JP89/00463
(22) 国際出願日 1989年 5月 2曰 （ 02. 05. 89) (22) International filing date May 2, 1989 (02.05.89)
(30) 優先権デ一タ (30) Priority data
特願昭 63-109587 1988年 5月 2日 （02. 05. 88) JP Patent application 63-109587 May 2, 1988 (02.05.88) JP
(71) 出願人（*Bを除くすべての指定国につ て） (71) Applicant (for all designated States except *B)
(NIPPON STEEL COBPOBA I ON ) J P/JP ] (NIPPON STEEL COBPOBA ION ) JP/JP ]
〒100 棘都千 f¾H区大 *ST二丁目 6番 3号 okyo, (JP) 〒100 Totosen f¾H Ward *ST 2-chome 6-3 okyo, (JP)
(72)発明者；および (72) inventor; and
(75) 発明者/出願人（米国についてのみ） (75) Inventor/Applicant (for US only)
： 恭秀 CONO, Yasuhi de)CJP/JP] : Yasuhide CONO, Yasuhide CJP/JP]
大関芳雄 COZE I, Yoshi o)CJP/JP] Yoshio Ozeki COZE I, Yoshi o)CJP/JP]
〒100 東京都千代田区大手町二丁目 6番 3号 新日本製載 ft*会社内 2-6-3 Otemachi, Chiyoda-ku, Tokyo, Japan 100 Shin-Nippon Seiki ft* Company
Tokyo, (JP) Tokyo, (US)
(74)代理人 (74) agent
f ± 浅村 皓， 外（ASAMUBA, Kiyoshi el al. ) f ± ASAMUBA, Kiyoshi el al.
flOO «g都千代田区大 W2丁目 2番 1号 新大手町 331 flOO «331 Shin-Otemachi 2-2-1 Dai W2-chome, Chiyoda-ku, Tokyo
Tokyo, CJP) Tokyo, CJP)
(81 ) 指定国 (81 ) Designated country
DE, GB, KR, US. DE, GB, KR, US.
添付公開 S類 国際調査報告香 Attached Disclosure S Class International Search Report
(54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS (54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS
(54)発明の名称 半導体素子用ポンディ ング ワイヤ ホ ディングウイャの破断強度に及ぼす (54) Title of Invention Effect on breaking strength of bonding wire for semiconductor device
RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME CU含有量と熱処理時間の関係 AFFECTING BREAK STRENGTH OF BONDING WIRE RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME AFFECTING BREAK STRENGTH OF BONDING WIRE
Figure imgf000033_0001
Figure imgf000033_0001
(57) Abstract 熱処理時間 （分） HEATING-TREATING ΠΜΕ(ιηίη) (57) Abstract Heat treatment time (min) HEATING-TREATING ΠΜΕ(ιηίη)
A bonding wire (3) ΙΟΓ connecting an electrode of a semiconductor element to an external lead (2 which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μπι in diameter. A bonding wire (3) ΙΟΓ connecting an electrode of a semiconductor element to an external lead (2 which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μπι in diameter.
PCTカ ゼツ ト番号 No.30/1989,セ ク シ ョ ン II参照 (57)要約 この発明 は、 半導体素子の電極を外部 リ ー ド （ 2 ) に 接続するためのポンデイ ングワ イ ヤ （ 3 ) に関 し 、 該ボ ンデイ ングワ イ ヤ （ 3 ) は 1 〜 5 wt %未篛の C u と、 残 部 A u 及び不可避不純物か ら成り 、 且つ破断強度及ぴ接 合強度に優れ、 1 0 ^ m 程度の綑径に しても信頼性の髙 い接続を得る こ とを可能にする 。 See PCT Case No. 30/1989, Section II. (57) Abstract This invention relates to a bonding wire (3) for connecting an electrode of a semiconductor device to an external lead (2), the bonding wire (3) being 1-5 wt. It consists of 100% uncured Cu and the balance Au and unavoidable impurities, and has excellent breaking strength and bonding strength, and obtains a highly reliable connection even with a screen diameter of about 10 m. make it possible.
NNRSSSTTUS NNRSSSTTUS
情報としての用途のみ Informational use only
PCTに基づいて公 Wされる国際出厫のバンフレ / ト第 1頁に PCT¾盟国を同定するために使甩される '— ド Used to identify the PCT ¾ member countries on page 1 of the International Dispatch Banquet published under the PCT.
AT オース ト リア FI フ ィ ンラン ド MLマリ― AT Austria FI Finland ML Marley
AU タニア AU Tania
オース トラ リア PR フランス MRモ一リ Australia PR France MR MOILI
BB , レ, 一 K GA ガボン M マラウィ BB , Le, I K GA Gabon M Malawi
BE GB イギリ ス オランダ BE GB United Kingdom Netherlands
ベルギ一 Belgium
/ルゥェ一 /Luwei
BG ブルガリァ HU ハンガリ— BG Bulgaria HU Hungary —
BJ ベナン IT ル一マニア BJ Benin IT Le Mania
イ タリー Italy
BR JP 曰本 ス一ダン BR JP Yumoto Suichidan
ブラジル Brazil
CF スゥヱ一デン CF Sueden
中央ァフリ力共和国 KP朝鮮民主主義人民共和国 Central African Republic KP Democratic People's Republic of Korea
CG コ ンゴ— R大韓民国 セネがル CG Congo — Republic of Korea Senegal
GH: スイ ス LI リ ヒテンシュタ イ ン ソ ビエト逋邦 GH: Switzerland LI Liechtenstein in Soviet Shebang
LK ス ラン力 チャ ド LK Slang Chad
カメル一ン camel one
DE 西ドィッ LU ルクセンブルダ トーゴ DE West Dutt LU Luxembourda Togo
D デンマーク MC モナコ 米国 D Denmark MC Monaco USA
ES スペイ ン マダガスカル ES Spain Madagascar
PCT 世界知的所有権機 M PCT World Intellectual Property Machine M
国 際 事 務 局 International Secretariat
特許協力条約に基つ"いて公開された国際出願 国 特許分類 4 International applications published under the Patent Cooperation Treaty Country Patent Classification 4
(11)国際公 M番号 WO 89/11161 (11) International public M number WO 89/11161
H01L 21/60, C22C5/02 H01L 21/60, C22C5/02
A1 A1
(43)国際公闋 S 1989年 11月 168(16.11.89)(43) International Public Service S November 1989 168 (16.11.89)
(21 ) 国際出顧番号 PCT/JP88 004S3 (21) International customer number PCT/JP88 004S3
(22) 国 lg出願曰 1988年 5月 13S (13. 05. 88) (22) Country lg Filing Date May 1988 13S (13.05.88)
(71) 出頃人（米国を除くナベての指定国につ て） (71) Natives (for all designated countries except the United States)
会社 柏原《«»！^所 Company Kashiwabara《«»! ^ place
(KASHIWABA MACHINE MPG. CO., LTD. ) CJP/TP] (KASHIWABA MACHINE MPG. CO., LTD. ) CJP/TP]
=τ582 ； fejaff拍原市; ^展耵1番 22号 Osaka, (JP) =τ582 ;
(72) 発明者：および (72) Inventor: and
(75) 発明者/出顔人（米国 つ てのみ） (75) Inventor/Person (for US only)
麵秀儻 (M0RI UNI, Hidenobu)CJP/JP3 M0RI UNI, Hidenobu CJP/JP3
=Γ582 ： teE府柏原市法善寺 1丁目 19香 7号 Osaka, (JP) = Γ582 : 1-19-7, Hozenji, Kashiwara-shi, teE Osaka, (JP)
西岡 保 （N'ISHIO A, Mamoru) CJF JI Tamotsu Nishioka (N'ISHIO A, Mamoru) CJF JI
干 619-13 京 «W相楽 IKS町字五置市場 52 Kyoto, (JP) 52 Kyoto, (JP)
松本 ¾ C ATSUMOTO, Hi rosh i ) JP/JPJ Matsumoto ¾ C ATSUMOTO, Hi rosh i ) JP/JPJ
〒636 奈良! ½駒郡 Ξ»ΒΙ立野 3丁目 15香 30号 Nara, (JP) 〒636 Nara !
B原健治 CFUJIHARA, Kenj i )CJP/JP3 Kenji Hara CFUJIHARA, Kenji )CJP/JP3
〒636 奈良県生駒郡ョ»町東信寅ヶ丘 3丁目 6番 6号 Nara, (JP) 〒636 Nara, (JP)
(74) 代理人 (74) Agent
弁理士 生形元重， 外（UBU ATん Motoshi ge et a 1. ) Patent Attorney UBU AT Motoshige et a 1.
〒541 大 K¾大阪市東区瓦町 5丁目 44番地 Osaka, (JP) Osaka, (JP)
(81) 指定国 (81) Designated country
DE, US. DE, US.
添付公開蒈類 国 報告 Attached publications country report
(54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS (54) Title: BONDING WIRE FOR SEMICONDUCTOR ELEMENTS
(54)発?^の名称 半導体素子用ポンディ ングワイヤ ホ デイン^ィャの破断強度に及 (54) Title Bonding wires for semiconductor devices
RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME CU含有量と熱処理時間の間係 AFFECTING BREAK STRENGTH OF BONDING WIRE RELATION BETWEEN Cu CONTENT AND HEAT TREATING TIME AFFECTING BREAK STRENGTH OF BONDING WIRE
Figure imgf000035_0001
Figure imgf000035_0001
(57) Abstract 熱処理時間 （分） HEATTNG-TREATING TIME(min) (57) Abstract HEATTNG-TREATING TIME(min)
A bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2), which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μπι in diameter. (57)要約 A bonding wire (3) for connecting an electrode of a semiconductor element to an external lead (2), which comprises 1 to less than 5 wt % of copper and the balance of gold and unavoidable impurities, and which has excellent break strength and bonding strength to provide reliable connection even in a thickness as small as about 10 μπι in diameter. (57) Summary
バ中べ西ブォブデォスコスカ Central West Buobdoskoska
央一 {一ルナルルンンメラィド Ōichi
アバスガルスギマンジゴスイイ abasgarsugimanjigosuii
ァリランリクドこア力スリ の発明 は 、 半導体素子の電極を外部 リ ー ド （ 2 ) に 共ァ The invention of Aliran Liquid Co., Ltd. is to combine the electrodes of the semiconductor element with the external leads (2).
接続す国る た め の ポ ンデイ ングワ イ ヤ （ 3 ) に 関 し 、 該ポ ンデイ ングワ イ ヤ （ 3 ) は 1 〜 5 wt%未満の C u と 、 残 部 A u 及び不可避不純物 か 成 り 、 且つ 破断強度及び接 合強度に 優れ、 1 0 ^ m 程度の細径に し て も信頼性の髙 い接続を得る こ とを可能に する 。 Regarding the bonding wire (3) for connecting countries, said bonding wire (3) consists of less than 1-5 wt% Cu, balance Au and unavoidable impurities. Moreover, it is excellent in breaking strength and bonding strength, and makes it possible to obtain a highly reliable connection even with a small diameter of about 10 m.
SS NNRSSTT SS NNRSSTT
化O DENU O DENU
情報 1 招 み Information 1 invitation
PCTに基づいて公閉される国際出願のバンフ レ ッ ト第 1頁に PCTftl盟国を同定するために使用されるコ ' The code used to identify the PCTftl member states on page 1 of the brochure of international applications published under the PCT.
PI フ ィ ンラン ド ML マ リ一 PI Finland ML Mali
FR フ ランス MR モ一リ タニア FR France MR Moritania
GA 力'ボン Wマラウ イ GA Force' Bon W Malawi
GB イ ギリ ス オ ラ ンダ GB United Kingdom Netherlands
HU ハンカ'リ一 ノ ルゥ 一 HU hanka'li one no ru one
IT イ タ リー ル一マニア IT Italy Rumania
JP 曰本 ス一ダン JP Yumoto Suichidan
KP 朗鲜民主主 *人民共和国 スゥ エーデン KP Long Bao Democracy * People's Republic of Sweden
R大鋒民国 セネゲル R Da Feng Republic Seneger
U リ ヒテンシュ タ イ ン ゾ ビェ ト速邦 U Liechtenstein
L ス リ ラ ンカ チヤ一ド L Sri Lanka
LU ルクセンブルダ トーゴ LU Luxembourg Togo
MC モナコ US 米国 MC Monaco US USA
Figure imgf000036_0001
MGマダガスカル
Figure imgf000036_0001
MG Madagascar
明 棚 発明 の名称 Name of invention
半導体素子用 ボ ン ディ ン グ ワ イ ヤ 技術分野 Bonding wires for semiconductor devices Technological field
本発 明 は半導体素子の電極 と外部 リ 一 ド を接続す る め に 使用 す る ポ ン デ イ ン グ ワ イ ヤ に 関 す る 。 背景技術 The present invention relates to a bonding wire used for connecting electrodes of a semiconductor element and external leads. Background technology
従来 、 半導休素子の電極 を外部 リ ー ド に 接続 す る た め に 、 A u に 微量の C a， B e , G e な ど を 含有 さ せ た A u 合金 の線径 2 5〜 5 0 ^ m の ヮ ィ ャ 、 す なわ ち ボ ン デ ィ ン グ ワ イ ャ が用 い ら れて い る 。 Conventionally, in order to connect the electrode of a semiconductor element to an external lead, a wire diameter of Au alloy containing trace amounts of Ca, Be, Ge, etc. in Au was used. A wire of 50 m, ie a bonding wire, is used.
こ の ワ イ ヤ を用 い て 半導体素子 と リ ー ド フ レ ー ム を接 続 す る際 に 、 両者 と も超 音波 に よ る圧接か 、 半導体素子 の電極 につ い て は 、 ァ ー ク で 先端を ポ 一 ル ア ッ プ し た 後 熱圧着 す る方法 が と ら れ て い る 。 When this wire is used to connect the semiconductor element and the lead frame, both are pressed by ultrasonic waves. A method is adopted in which the tip is poled up with a hook and then thermally crimped.
し か し な が ら 、 近年 I C よ り ー 窿 の小型化 、 集積化が お こ な わ れ 、 電極数の 増加 の た め 、 現状 ワ イ ヤ 径で は 、 電極 の 占 め る面積 が大き' く な り すぎる こ と が 問題視さ れ る よ o に な つ て き た 。 こ の 問題 を解決 す る た め に は 、 ヮ ィ ャ 径 を細 く する こ と が必要で あ る が 、 現状 の ワ イ ヤ を 細 く し た の で は、 配線時及び使用 中 に 断線の割合が高 く 実用 に 供 し えな い 。 その ため現状 ワ イ ヤで は 、 ボ ンディ ン グワ イ ヤ の特性 と し て は線径 2 0 Ad m 程度が限界であ る とさ れて い た 。 However, in recent years, ICs have become smaller and more integrated, and the number of electrodes has increased. It's becoming a problem that it's getting too thin. In order to solve this problem, it is necessary to make the diameter of the wire thinner. The percentage of For this reason, in the current state of the wire, it was said that the wire diameter of about 20 Adm was the limit as a characteristic of the bonding wire.
特開 昭 5 6 — 4 9 5 3 4号公報及ぴ特開昭 P 5 6 — 4 9 5 3 5号公報で は P 1： を 、 3 0 wt % ま で 、 あ る い は P d を 4 0 %まで A u に加える こ と に よ り ヮ ィ ャ の髙強度 化 を はか り 、 細線化を可能 にする と い ぅ 提案 もあ る が 、 合金元素の含有量が ある 限界を越える と ポ ー ルの硬さ が 増 し 、 熱圧着 に必要な荷重が大き く な り 、 I Cの シ リ コ ン チップ に損傷を与える 等の 問題が起き る 。 特開昭 6 0 - 5 9 5 8号公報で は A に異種元素を混入 し た電極 配線 に対 し て良好な熱圧着性を有す る ボ ンデ イ ングワ イ ャ と し て A u基の合金ワ イ ヤ が提案さ れて い る が 、 こ れ も同様の 問題があ り 、 従来か ら 採用 さ れて い る I C、 及 ぴ接合方法を特別 に 変更する こ と な く 、 I Cの小型化 、 高密度化が はかれる新 し い ポ ンディ ング ヮ ィ ャ が求め ら れて い る 。 発明 の 開示 In JP-A-56-49534 and JP-A-56-49535, P1: up to 30 wt %, or Pd There is a proposal to increase the strength of the wire by adding up to 40% of Au to make the wire thinner, but the content of the alloying element exceeds a certain limit. When this happens, the hardness of the pole increases and the load required for thermocompression bonding increases, causing problems such as damage to the silicon chip of the IC. Japanese Patent Application Laid-Open No. 60-5958 discloses an Au-based bonding wire having a good thermocompression bonding property for electrode wiring in which A is mixed with a different element. An alloy wire has been proposed, but it also has the same problem, and without any special change in the conventionally adopted IC and the joining method, the IC There is a demand for a new bonding device that can achieve miniaturization and high density. Invention disclosure
本発明で は 、 ボ ンディ ン グワ イ ヤ の線径を こ れま で よ り も細 く し て も従来の ワ イ ヤ と同 じ信頼性を持っ た ワ イ ャ を提供す る こ とを 目 的'と する 。 ま た 、 本発明 の他の 目 的 と し て は、 製造時に お い て も強度がつ よ く て極細線 に する こ と が可能で 、 接合時の破断強度 に 優れた 断線の極 め て 少な い半導体素子用 ボ ンディ ン グ ワ イ ヤ を提供 し よ う と す る あので あ る 。 The present invention aims to provide a wire having the same reliability as a conventional wire even if the wire diameter of the bonding wire is made thinner than before. 'Purpose'. Another object of the present invention is to provide a wire which has high strength even during production, can be made into an extra-fine wire, and has excellent breaking strength during bonding and is extremely resistant to breakage. That is why we are trying to provide bonding wires for semiconductor devices that are less in demand.
1 1
5 Five
図面 の簡単な説明 A brief description of the drawing
第 Ί 図 は C u を 含有 し た 本発明 の ボ ン デ ィ ン グ ワ イ ヤ の破断強度 に 関 し 、 C u 含有量 と 熱処理 し 条件 と の 関連 を示 し た グ ラ フ であ り 、 FIG. Ί is a graph showing the relationship between the Cu content and the heat treatment conditions with respect to the breaking strength of the bonding wire of the present invention containing Cu. ,
5 第 2 図 は 、 接合強度測定法の 説明 図で あ る 。 発 明 の実施 す る た め の最良の形態 5 Fig. 2 is an explanatory diagram of the bonding strength measuring method. BEST MODE FOR CARRYING OUT THE INVENTION
本発 明 の ボ ンデ ィ ン グ ワ イ ヤ の特徴 は " F記の と お り で あ る 。 The features of the bonding wire of the present invention are as described in "F".
10 (1) C u を Ί 〜 5 wt %未満 含有 し 、 残部 は A u か ら な る 半導体素子用 ボ ン ディ ン グ ワ イ ヤ 。 10 (1) A bonding wire for a semiconductor device containing Ί to less than 5 wt % of Cu and the balance being Au.
(2) C u を 1 〜 5 wt%未満 と 、 C a , G e , B e , L a , I n の Ί 種 ま た は 2種以上を合計で 0 . 0 0 0 3 〜 0 . 0 1 wt%含有 し 、 残部 は A u か ら な る 半導体素子 用 ボ ン デ ィ ン グ ワ イ ヤ 。 (2) Less than 1 to 5 wt% of Cu and 0.0003 to 0.0 in total of Ί species or two or more of Ca, Ge, Be, La, and In A bonding wire for a semiconductor device containing 1 wt% and the balance being Au.
(3) C u を 1 〜 5 wt %未満 と 、 P t を Ί 〜 5 v/t %未満 含有 し 、 残部 は A u か ら な る半導体素子用 ボ ン デ ィ ン グ ワ イ ヤ 。 (3) A bonding wire for a semiconductor device containing less than 1 to 5 wt % of Cu, less than Ί to less than 5 v/t % of Pt, and the balance being Au.
(4) C u を Ί 〜 5 wt %未満 と 、 P t を 1 〜 5 wt %未満 (4) Cu less than Ί ~ 5 wt% and Pt less than 1 ~ 5 wt%
20 と 、 C a , G e , B e , L a , I n の 1 種 ま た は 2種以 上 を 合計で 0 . 0 0 0 3 〜 0 . 0 1 wt%含 有 し 、 残部 は A u か ら な る半導体素子用 ポ ンデ イ ング ワ イ ヤ 。 20 and one or more of Ca, Ge, Be, La, and In in a total amount of 0.0003 to 0.01 wt%, the balance being A A bonding wire for a semiconductor device, consisting of u.
本発 明 の半導体 素子用 ボ ン デ ィ ン グ ワ イ ヤ に お い て 、 A u に C u を 1 〜 5 wt%未満含有 さ せ た 理 由 は 、 C u が In the bonding wire for a semiconductor device of the present invention, the reason why Cu is contained in Au in an amount of less than 1 to 5 wt% is that Cu
25 A u に 完全 に 固 溶 す る こ と に よ り 、 母線 の 強度が 向 上す る ばか り か接合強度も髙 く な る か らで 、 こ れ までの ワ イ ャ で はなかなか難 し かっ た線径 2 0 m 以下の細線 に し て も 、 C u が 1 %以上含有さ れていれば 、 破断強度 49 r 以上を満足する こ と が 出来る 。 こ の特徴 は 、 〇 u の含有 量の増加 と と も に強度の上昇が認め ら れる が 、 5 %を越 える と耐食性 に問題を生 じ 、 長時間 を経た後で の信頼性 を損な う 。 ま た 、 G uの含有量が 5 %に達す る と接合時 に 形成 す る ポールの硬さ が増加 し 、 熱圧着 に 必要な荷重 が 大き く な る こ と か ら シ リ コ ン チップに 損傷を与 え る た めで あ る 。 By completely dissolving in 25 Au, the strength of the bus bar is improved. Not only is the bonding strength increased, but even fine wires with a wire diameter of 20 m or less, which has been difficult with conventional wires, contain 1% or more of Cu. If it is, it is possible to satisfy the breaking strength of 49r or more. As for this feature, an increase in strength can be observed as the content of 〇u increases, but if the content exceeds 5%, corrosion resistance becomes a problem and reliability is impaired after a long period of time. cormorant . In addition, when the Gu content reaches 5%, the hardness of the pole formed at the time of bonding increases, and the load required for thermocompression bonding increases. This is to inflict damage.
なお 、 原料 と なる A u 、 .C u は不純物 の含有量が多 い と 製品 の特性が不安定 と なる こ と と 、 細線化や接合時に 破断の原因 となるので 、 9 9 . 9 %以上の高純度 と す る こ と が好 ま し い 。 If the content of impurities in Au and Cu, which are raw materials, is high, the characteristics of the product will become unstable, and it will cause breakage during thinning and joining. It is preferable to use high purity of
C u の 含有に よっ て この よ う な効果が得 ら れる の は 、 固溶体強化 と規則格子の生成に よっ て い る と 推察さ れる な お 、 P t は、 この効果を助長する働き を す る 。 そ の含 有量は 、 Ί 〜 5 wt%未満の範囲で 、 それ未満で は効果が な く 、 上限を越える と延性の減少や ポ ー ルの硬さ の増加 と い う 不都合が生ず る 。 It is inferred that the reason why such an effect is obtained by the inclusion of Cu is due to solid solution strengthening and the formation of an ordered lattice. . Its content is in the range of Ί to less than 5 wt%. .
伸線時 に導入さ れた加 ·Ι歪を除き 、 適度な延性 と 十分 な強度を保持す る ため に 、 2 0 0〜 6 0 0 °Cの温度 と適 切 な 時間 の熱処理を行う こ と が望ま し い 。 Heat treatment at a temperature of 200 to 600°C for an appropriate time is recommended in order to remove the Ι strain introduced during wire drawing and to maintain moderate ductility and sufficient strength. and are desirable.
伸線 ま ま の翊線は延性 （ 伸び ） が な く 、 ま た加 工歪の た め カ ールが強 く 、 使用 に供せない こ とが あ る ので通常 は 焼な ま し 熱処理を行 う 。 熱処理の 温度が高い ほ ど 、 長 時 間 で あ る ほ ど強度が低下 し 、 延性が大き く な る の が一 般 的で あ る が 、 そ の程度 は合金成分 の含有量 に よ っ て 異 な る ので 、 線径 と 成分 に 応 じ た 熱処理条件を選ぶ必要が あ る 。 ま た 、 こ の熱処理 に よ っ て 耝锾の再結晶 、 粒成長 が 進行 す る が結晶粒径が線径 に 近づ く と 強度 、 延性 と も に い ち じ る し く 低下す る た め 、 熟処理条件の選定 は細径 ワ イ ヤ の場合 は特 に重要で あ る 。 As-drawn black wire has no ductility (elongation) and curls strongly due to distortion during processing, which may make it unusable. Annealing heat treatment is performed. Generally, the higher the temperature and the longer the heat treatment, the lower the strength and the higher the ductility. Since they differ, it is necessary to select the heat treatment conditions according to the wire diameter and composition. In addition, this heat treatment promotes recrystallization and grain growth, but when the crystal grain size approaches the wire diameter, both strength and ductility drop significantly. Therefore, the selection of ripening conditions is especially important for small diameter wires.
第 1 図 は 、 C u を 含有 し た 線径 1 0 m の ワ イ ヤ で 4 gr以上 の破斷強度 を確保 す る 熱処理条件を示 し た グ ラ フ で あ る 。 実線 は 4 0 0 eC 、 破線 は 2 0 0 で処理 し た 場 合を示 し て い る 。 FIG. 1 is a graph showing heat treatment conditions for securing a breaking strength of 4 gr or more in a wire containing Cu and having a wire diameter of 10 m. The solid line shows the case of 400 eC , and the dashed line shows the case of 200 eC.
ま た 、 特 に 、 従来の金ボ ン デ ィ ン グ ワ イ ヤ の 添加 に も 用 い ら れて い る C a , B e , G e , L a , I n の 添加 は 本発 明 の ポ ンデ イ ン グ ワ イ ヤ の接合強度を 向 上さ せ る 。 こ の 目 的の た め に 、 こ れ ら の元 素の 1 種 ま た は 2 種以上 を合計で 0 . 0 0 0 3 〜◦ . 0 1 wt%の 範 囲で 添加 す る こ と が で ぎ る 。 In particular , the addition of Ca , Be , Ge , La , and In , which are also used for adding conventional gold bonding wires , is useful in the present invention . Improves bonding strength of bonding wire. For this purpose, one or more of these elements may be added in a total amount of 0.0003 to .01 wt%. Degiru.
本発 明 の ポ ンデ イ ン グ ワ イ ヤ は 、 真空 溶解炉等を 用 い て 本発明 に し た がっ た 化学成分の A u合金を 溶解 し 铸造 し た 後 、 線引 、 熟処理等-を お こ なっ て 所望 の線径の ワ イ ャ に 製造さ れる 。 The bonding wire of the present invention is produced by melting and forging an Au alloy having the chemical composition according to the present invention using a vacuum melting furnace or the like, followed by drawing and aging. A wire of the desired wire diameter is manufactured by carrying out such processes.
つ ぎ に 、 本発 明 の効 果 を 明瞭 に す る 実施例 を 説明 す る 純度 9 9 . 9 9 % の 高純度 A u と 純度 9 9 . 9 %の高 純度 C u を用 い 、 第 Ί 表 の よ う な元 素 を 添加 し た 材 料を 真空溶解炉で溶製 し 、 線引、 熟処理をお こ なっ た 。 線径 は 1 0 m 、 一部 は 、 1 2 Next, using high-purity Au with a purity of 99.99% and high-purity Cu with a purity of 99.9%, the first A material with added elements as shown in the Ί table It was melted in a vacuum melting furnace, and subjected to wire drawing and aging. Wire diameter is 10 m, some are 12
2 5 m 、 3 0 m であ る 25m and 30m
引っ張り 試験 はゲ ー ジ長 1 0 0 雕の試験片を用 いた 。 接合強度は第 Ί 図 に示す よ う に S i チップ 1 と リ ー ド フ レー ム 2 に接合 し た ポ ンデイ ングワ イ ヤ 3 を図 に示す よ う に矢印方向 に 引 っ張り 、 そ の ときの破断強度を測定 し た 。 ワ イ ヤ の破 ϋ荷重 、 伸び と接合後の破新強度を比較 材 と対比 し た第 1 表 に示す A test piece with a gauge length of 100 mm was used for the tensile test. The bonding strength is measured by pulling the bonding wire 3 bonded to the Si chip 1 and the lead frame 2 in the direction of the arrow as shown in Fig. Ί, and then was measured. Table 1 compares the wire fracture load, elongation, and fracture strength after bonding with those of the comparative materials.
第 1 表か ら 明 ら かなよ う に 、 本発明 ワ イ ヤ は 、 細径に も かかわ らず破断強度及び接合強度が優れて い る こ と が わかる 。 ま た 、 従来の ポ ンデ イ ングワ イ ヤ と同様の線径 で使用 す れば 、 よ り 強度の高い ワ イ ヤ が得 ら れる 。 As is clear from Table 1, the wire of the present invention has excellent breaking strength and bonding strength in spite of its small diameter. In addition, if used with the same wire diameter as the conventional bonding wire, a wire with higher strength can be obtained.
1 表 化学成分 (wt%) 繃 引 張 試 験 】5 CJ I の "ノ Table 1 Chemical composition (wt%) Tensile test] 5 CJ I
翻 translation
AU CU Ρΐ Ca Ge Be し 3 I n ( \ f/m "リ) 破断強度 (g) 仲びは） V y / AU CU Ρΐ Ca Ge Be 3 In ( \ f/m ") Breaking strength (g) V y /
jiHiyy I 残 1 in 4.1 1 1 ¾ 200°Π 1jiHiyy I remaining 1 in 4.1 1 1 ¾ 200°Π 1
" L 残 1.2 1 10 4.4 4 ？ , ftリ t-Vu j il J" L remaining 1.2 1 10 4.4 4 ?, ft re t-Vu j il J
/; 2 0.0004 i 1nJ 4.3 6 3？ n/; 2 0.0004 i 1nJ 4.3 6 3? n
；； A 2 0.0008 0眉 0.0024 1 10 4.2 5 ¾ ;; A 2 0.0008 0 eyebrows 0.0024 1 10 4.2 5 ¾
残 3 i 1n w 4.7 12 3 ft £·、,、, j 1 \t remaining 3 i 1n w 4.7 12 3 ft £ ,,,, j 1 \t
„ " a o 残 4 0.0042 10 6.4 9 , Λ 1 ft„ „ a o remaining 4 0.0042 10 6.4 9 , Λ 1 ft
；； 7 残 4 2 0.0011 0.0042 0.0018 0.0014 0.0012 1 10 V 1.1 7 4 /1 // n 8 2 4 0.0028 15 12.2 3 4.7 //;; 7 remaining 4 2 0.0011 0.0042 0.0018 0.0014 0.0012 1 10 V 1.1 7 4 /1 // n 8 2 4 0.0028 15 12.2 3 4.7 //
" 9 残 2 0.000J 0.0012 15 10.5 3 4.9 /" 9 Balance 2 0.000J 0.0012 15 10.5 3 4.9 /
" 10 残 2 3 19 17.4 11 5.4 220ΌΧ15" 10 Balance 2 3 19 17.4 11 5.4 220ΌΧ15
" 11 2 3 0.0062 19 17.4 11 5.4 220ΌΧ15" 11 2 3 0.0062 19 17.4 11 5.4 220ΌΧ15
" 12 2 0.0028 15 10.2 3 4.7 ；；" 12 2 0.0028 15 10.2 3 4.7 ;;
" 13 残 2 0.0022 25 19.3 8 6.7 n" 13 Balance 2 0.0022 25 19.3 8 6.7 n
" 14 残 2 0.0043 30 24.4 5 10.2 //" 14 remaining 2 0.0043 30 24.4 5 10.2 //
" 15 3 15 13.2 4 6.8 450ΌΧ 5" 15 3 15 13.2 4 6.8 450ΌΧ 5
" 16 残 3 0.0008 0.0021 0.0013 19 17.3 5 8.7 " 16 Balance 3 0.0008 0.0021 0.0013 19 17.3 5 8.7
1 つづき 1 continued
Figure imgf000044_0001
Figure imgf000044_0001
接合後の I Cチップに ϋί0が認めら ϋί0 was observed in the IC chip after bonding.
産業上 の利用 可 能性 Industrial applicability
以上 説明 し た よ う に 、 本発明 ワ イ ヤ は 、 破断強度及び 接合強度 に 優れ 、 特 に 、 従来の ワ イ ヤ に対 し て 、 1 0 U m の よ う な細径 に し て.も従来の ワ イ ヤ以上 に 信頼性の 高 い ワ イ ヤ と し て 高集積化 し た L S I の小型化 に 役立つ あ ので あ る 。 As explained above , the wire of the present invention is excellent in breaking strength and bonding strength , and in particular , compared to conventional wires , it has a diameter as small as 10 Um . As a wire with higher reliability than the conventional wire, it is useful for miniaturization of highly integrated LSIs.

Claims

5 請 求 の 範 囲 5 Claims
1. C u を 1 〜 5 wt%未篛含有 し 、 残部は A u と不 可避不純物か ら な る半導体素子用 ボ ン デ ィ ングワ イ ヤ 。 1. A bonding wire for semiconductor devices containing 1 to 5 wt% of pure Cu, the balance being Au and unavoidable impurities.
5 2. G u を 1 〜 5 wt%未満 と 、 C a， G e . B e , 5 2. Gu less than 1 to 5 wt%, Ca, Ge, Be,
L a , I nの 1 種ま た は 2種以上を合計で 0. 0 0 0 3 〜 0. 0 1 wt%含有 し 、 残部 は A u と不 可避不純物か ら な る半導体素子用 ボ ンディ ング ワ イ ヤ 。 A semiconductor element containing one or more of La and In in a total amount of 0.0003 to 0.01 wt%, the balance being Au and unavoidable impurities. binding wire.
3. C u を Ί 〜 5 wt%未満 と 、 P t を "] 〜 5 wt%未 3. Cu less than Ί ~ 5 wt% and P t less than ~ 5 wt%
10 満含有 し 、 残部 は A u と不可避不純物 か ら な る半導体素 子用 ポ ンデイ ング ワ イ ヤ 。 A bonding wire for a semiconductor device containing 10% and the balance being Au and unavoidable impurities.
4. C u を 1 〜 5 wt%未満 と 、 P t を 1 〜 5 wt%未 満 と 、 C a , G e , B e , L a , I nの Ί 種ま た は 2種 以上を合計で 0. 0 0 0 3〜 0. Ο Ί v/t%含有 し 、 残部 は A L1 と不可避不純物 か ら な る半 ¾体素子用 ボ ンディ ン グワ イ ヤ 。 4. Cu less than 1 to 5 wt%, Pt less than 1 to 5 wt%, and Ί species of Ca, Ge, Be, La, and In, or two or more A bonding wire for a semiconductor element containing 0.0003 to 0.ΟΊv/t% in , the balance being AL1 and unavoidable impurities.
5. 線径が 2 0 m 以下で あ る諮-求項 "！ 〜 4 の いず 5. Any of items 1 to 4 for which the wire diameter is 20 m or less
PCT/JP1989/000463 1988-05-02 1989-05-02 Bonding wire for semiconductor elements WO1989011161A1 (en)

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KR1019890702503A KR930001265B1 (en) 1988-05-02 1989-05-02 Bonding wir for semiconductor elements
DE3990432A DE3990432C1 (en) 1988-05-02 1989-05-02 Bonding wire for connecting electrode of semiconductor element
GB8928848A GB2229859B (en) 1988-05-02 1989-12-21 Bonding wire for semiconductor elememt
SG122193A SG122193G (en) 1988-05-02 1993-11-10 Bonding wire for semiconductor element

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JP63/109587 1988-05-02

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JPH10233408A (en) * 1997-02-21 1998-09-02 Nec Corp Metal junction structure and semiconductor device
JP3426473B2 (en) * 1997-07-01 2003-07-14 新日本製鐵株式会社 Gold alloy wires for semiconductor devices
DE19740004A1 (en) * 1997-09-11 1998-11-19 Siemens Ag Bond wire for semiconductor device contact terminal
DE19753055B4 (en) * 1997-11-29 2005-09-15 W.C. Heraeus Gmbh Fine wire of a gold alloy, process for its preparation and its use

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JPS5676556A (en) * 1979-11-28 1981-06-24 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

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JPS5649534A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
JPS5676556A (en) * 1979-11-28 1981-06-24 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

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JP2745065B2 (en) 1998-04-28
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KR930001265B1 (en) 1993-02-22
GB8928848D0 (en) 1990-06-13

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