CN105308731B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
CN105308731B
CN105308731B CN201480034970.1A CN201480034970A CN105308731B CN 105308731 B CN105308731 B CN 105308731B CN 201480034970 A CN201480034970 A CN 201480034970A CN 105308731 B CN105308731 B CN 105308731B
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Prior art keywords
epoxy resin
electric wire
electrode pad
semiconductor device
semiconductor chip
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CN201480034970.1A
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Chinese (zh)
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CN105308731A (en
Inventor
伊藤慎吾
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Publication of CN105308731A publication Critical patent/CN105308731A/en
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/181—Encapsulation

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Abstract

Semiconductor device (100) has: having the semiconductor chip (10) of electrode pad (12)；With the electric wire (30) being electrically connected with electrode pad (12).Electric wire (30) using first metal material of the Ag as main component and containing Pd by being constituted.Electrode pad (12) with Al the second metal material as main component by being constituted.At the joint portion (40) of electric wire (30) and electrode pad (12), it is formed with the alloy-layer containing Ag, Al and Pd.

Description

Semiconductor device
Technical field
The present invention relates to semiconductor devices.
Background technique
Semiconductor chip is for example electrically connected using closing line with lead frame or substrate.Technology related with closing line is carried out Various researchs, can enumerate the technology recorded in such as Patent Documents 1 to 5.
In patent document 1, the pure metal in gold, silver or copper, gold-silver alloy, gold-copper alloy or gold-palladium is recorded to close The Dispersion on surface of gold has the electric wire material of the nitride of addition element group.Recorded in patent document 2 and 3 with have silver wire and Coat the related technology of closing line of the metal film of silver wire.The Ag closing line containing Au and Bi is recorded in patent document 4.? Recording in patent document 5 has with the element of one or more of Cu, Au and Ag core material as main component and on core material The bonding wire for semiconductor with Pd outer layer as main component.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2008-174779 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2001-196411 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2001-176912 bulletin
Patent document 4: Japanese Unexamined Patent Publication 2012-49198 bulletin
Patent document 5: No. 2010/106851 pamphlet of International Publication No.
Summary of the invention
Technical problems to be solved by the inivention
The electrode pad of semiconductor chip and the connection terminal of substrate are for example electrically connected to each other by electric wire.Such half In conductor device, exist by the electric wire that is constituted with Ag metal material as main component and setting in a semiconductor chip and by The case where being engaged with the electrode pad that Al metal material as main component is constituted.In this case, have and welded in electric wire and electrode The case where excellent joint reliability cannot be obtained between disk.
For solving the means of technical problem
According to the present invention, a kind of semiconductor device is provided, is had:
The semiconductor chip for having electrode pad；With
The electric wire being electrically connected with above-mentioned electrode pad,
Said wires by being constituted using first metal material of the Ag as main component and containing Pd,
Above-mentioned electrode pad by being constituted with Al the second metal material as main component,
At the joint portion of said wires and above-mentioned electrode pad, it is formed with the alloy-layer containing Ag, Al and Pd.
Invention effect
In accordance with the invention it is possible to improve the joint reliability between electric wire and electrode pad.
Detailed description of the invention
Above-mentioned purpose and other objects, features and advantages by preferred embodiment described below and accompany it Attached drawing below will become more apparent upon.
Fig. 1 is the plan view for indicating the semiconductor device of first embodiment.
Fig. 2 is the sectional view for indicating semiconductor device shown in FIG. 1.
Fig. 3 is the enlarged drawing at joint portion shown in Fig. 2.
Fig. 4 is the plan view for indicating the first variation of semiconductor device shown in FIG. 1.
Fig. 5 is the sectional view for indicating the second variation of semiconductor device shown in FIG. 1.
Specific embodiment
Hereinafter, being illustrated using attached drawing to embodiment.In addition, in whole attached drawings, to same constituent element Same symbol is marked, is suitably omitted the description.
Fig. 1 is the plan view for indicating the semiconductor device 100 of present embodiment.Fig. 2 is to indicate semiconductor dress shown in FIG. 1 Set 100 sectional view.
The semiconductor device 100 of present embodiment has semiconductor chip 10 and electric wire 30.Semiconductor chip 10 has electricity Pole pad 12.Electric wire 30 is electrically connected with electrode pad 12.Electric wire 30 is by using first metal material of the Ag as main component and containing Pd Material is constituted.Electrode pad 12 with Al the second metal material as main component by being constituted.In connecing for electric wire 30 and electrode pad 12 Conjunction portion 40 is formed with the alloy-layer containing Ag, Al and Pd or the alloy-layer containing Ag, Al, Pd and Au.
According to the present embodiment, by the electric wire 30 that is constituted using first metal material of the Ag as main component and containing Pd with Joint portion 40 by the electrode pad 12 constituted with Al the second metal material as main component, is formed with containing Ag, Al and Pd Alloy-layer or alloy-layer containing Ag, Al, Pd and Au.It was found by the inventors of the present invention that in this case, Neng Goushi Existing moisture-proof reliability and high temperature take care of the joint portion 40 of the balancing good of characteristic etc..Thereby, it is possible to improve electric wire 30 and electrode to weld Joint reliability between disk 12.
Hereinafter, the manufacturing method of composition and semiconductor device 100 to the semiconductor device 100 of present embodiment is in detail It is illustrated.
The semiconductor device 100 of present embodiment has: substrate 20；With the semiconductor chip 10 being mounted on substrate 20. Substrate 20 and semiconductor chip 10 are electrically connected to each other by electric wire 30 (closing line).In Fig. 1, such as structure of semiconductor device 100 At the semiconductor package part equipped with semiconductor chip 10 on substrate 20.
In the example depicted in figure 1, it illustrates on substrate 20 equipped with semiconductor chip 10 the case where.Another party Face, the semiconductor device 100 of present embodiment can also have the multiple semiconductor chips being for example layered on top of each other on substrate 20 10.In this case, each semiconductor chip 10 is for example electrically connected by electric wire 30 with substrate 20 respectively.
As long as 20 those skilled in the art of substrate are identified as that the component of semiconductor chip can be carried, just do not limit especially Determine, for example, wiring substrates, lead frame, other semiconductor cores such as built-in inserted plate (interposer) or motherboard (mother board) Piece etc..
In fig. 1 and 2, the case where substrate 20 is built-in inserted plate is instantiated.In this case, in substrate 20 with carrying The opposite another side of the one side of semiconductor chip 10 is provided with multiple solder balls 62.Have substrate 20 and semiconductor chip 10 Semiconductor device 100 is for example mounted on other wiring substrates by solder ball 62.
Substrate 20 has connection terminal 22.One end of electric wire 30 is engaged with the surface portion of connection terminal 22.
Connection terminal 22 is for example arranged in the one side of the carrying semiconductor chip 10 in substrate 20.In the one side of substrate 20 On, such as it is provided with multiple connection terminals 22.In this case, multiple connection terminals 22 are for example along the outer of semiconductor chip 10 Edge setting.In the example depicted in figure 1, connection terminal 22 is the electrode pad being arranged on the substrate 20 for constituting built-in inserted plate.
At least surface portion in connection terminal 22 with Au material as main component for example by being constituted.
In addition, the surface portion of connection terminal 22 is for example by being sequentially laminated with Ag in the case where substrate 20 is lead frame Or Ni layers, Pd layers and Au layers of stacked film is constituted.
Equipped with semiconductor chip 10 on substrate 20.As semiconductor chip 10, such as integrated circuit, big can be enumerated Scale integrated circuit and solid-state imager.Semiconductor chip 10 is for example bonded in via die bonding material membranaceous or paste In the one side of substrate 20.
Semiconductor chip 10 has electrode pad 12.The opposite side of one end engaged with connection terminal 22 in electric wire 30 The other end is engaged with the surface portion of electrode pad 12.
The another of the opposite side of the one side opposite with substrate 20 in semiconductor chip 10 is for example arranged in electrode pad 12 On face.On the another side of semiconductor chip 10, such as it is provided with multiple electrodes pad 12.In this case, multiple electrodes are welded Disk 12 is for example arranged along the outer rim of semiconductor chip 10.
Electrode pad 12 with Al the second metal material as main component by being constituted.In this case, in electrode pad 12 The surface portion engaged with electric wire 30 be made of the second metal material.In the present embodiment, the of electrode pad 12 is constituted Two metal materials can also contain other metal materials such as Ni, Au, Pd, Ag, Cu, Si or Pt other than Al.
In the present embodiment, the content for constituting the Al in the second metal material of electrode pad 12 is, for example, 90 weight % The above 100 weight % or less.
Electric wire 30 is electrically connected with connection terminal 22 and electrode pad 12.In the present embodiment, for example, electric wire 30 one End is engaged with connection terminal 22, and the other end opposite with the one end of electric wire 30 is engaged with electrode pad 12.Before electric wire 30 Between end 30a and electrode pad 12, joint portion 40 made of they are engaged is formed.In the example depicted in figure 1, in semiconductor Chip 10 is provided with multiple electrodes pad 12, and substrate 20 is provided with multiple connection terminals 22.In this case, setting makes each electricity Multiple electric wires 30 that pole pad 12 and each connection terminal 22 are electrically connected to each other.
In the present embodiment, the diameter of electric wire 30 is, for example, 15 μm or more 25 μm hereinafter, particularly preferably 18 μm or more 20 μm or less.
Electric wire 30 using first metal material of the Ag as main component and containing Pd by being constituted.In this case, in electric wire 30 The front end 30a engaged with electrode pad 12 be made of the first metal material.In the present embodiment, the of electric wire 30 is constituted One metal material can also contain such as Au other than Ag and Pd.Thereby, it is possible to more effectively improve the resistance to of joint portion 40 Wet reliability.
The content for constituting the Ag in the first metal material of electric wire 30 be preferably 85 weight % or more, 99.5 weight % hereinafter, More preferably 85 mass % or more, 96 mass % or less.Thereby, it is possible to reduce manufacturing cost, and more effectively improve joint portion 40 moisture-proof reliability and high temperature takes care of characteristic, realizes the raising of the joint reliability between electric wire 30 and electrode pad 12.
In addition, the content for constituting the Pd in the first metal material of electric wire 30 is preferably 0.5 weight % or more, 15 weight % Hereinafter, more preferably 2 weight % or more, 10 weight % is hereinafter, further preferably 3 weight % or more, 6 weight % or less.As a result, It is able to suppress the increase of manufacturing cost and more effectively improves moisture-proof reliability and high temperature keeping characteristic.In addition, in the first gold medal Belong in material containing in the case where Au, the content of the Au in the first metal material it is for example bigger than 0 weight % and for 10 weight % with Under, more preferably 2 weight % or more, 10 weight % or less.Thereby, it is possible to improve the zygosity of electric wire 30.But in Ag content In the case where for 94 weight % or more, even if can also be with without using Au.
Fig. 3 is the enlarged drawing at joint portion 40 shown in Fig. 2.As shown in figure 3, on the another side of semiconductor chip 10, shape At having such as the protective film 50 constituted by polyimides.Protective film 50 is provided with opening so that the surface of electrode pad 12 is revealed Out.
At the joint portion 40 of electric wire 30 and electrode pad 12, it is formed with the alloy-layer 32 containing Ag, Al and Pd.As a result, can Enough realize the joint portion 40 of the balancing good of moisture-proof reliability and high temperature keeping characteristic etc..Alloy-layer 32 containing Ag, Al and Pd Such as it can be by appropriately respectively controlling the second of the composition for constituting the first metal material of electric wire 30, composition electrode pad 12 The composition and electric wire 30 of metal material are formed with the joint method of electrode pad 12.
The ratio of components of Ag, Al and Pd in alloy-layer 32, such as each region for including in alloy-layer 32 can mutually not Together.Alloy-layer 32 in present embodiment is for example arranged to, be located at 30 side of electric wire one end, be located at 12 side of electrode pad The other end compare, the ratio of components of Ag and Pd are got higher, and the ratio of components of Al is lower.In addition, the alloy in present embodiment Layer 32 can have the region without containing Pd in the other end for being located at 12 side of electrode pad, it is preferred that not having the region.
In addition, alloy-layer in the case where containing Au in the first metal material for constituting electric wire 30, in present embodiment 32 are for example arranged to, in the one end for being located at 30 side of said wires, compared with the other end for being located at 12 side of electrode pad, Ag, The ratio of components of Pd and Au is got higher, and the ratio of components of Al is lower.
In the present embodiment, electric wire 30 and electrode pad 12 via joint portion 40 formed containing Ag, Al and Pd or Alloy-layer 32 containing Ag, Al, Pd and Au is interconnected.
In the example shown in Fig. 3, the end face setting stratification that with electrode pad 12 engages of the alloy-layer 32 in electric wire 30 Shape or island.At this point, the end face engaged with electrode pad 12 in electric wire 30, consistent with the bottom surface of front end 30a.In addition, closing It's not limited to that for the shape of layer gold 32, is capable of forming as various shape.
Semiconductor chip 10 and electric wire 30 for example utilize the sealing resin 60 being made of the solidfied material of composition epoxy resin Sealing.In this case, the joint portion 40 of electric wire 30 and electrode pad 12 also utilizes the solidfied material of above-mentioned composition epoxy resin Sealing.
The solidfied material for the composition epoxy resin that semiconductor chip 10 and electric wire 30 seal can for example be contained into organic sulfur Compound.In this case, the solidfied material of composition epoxy resin can be made relative to semiconductor chip 10 and by based on Ag The adaptation for the electric wire 30 for wanting the first metal material of ingredient to constitute is good.Therefore, it is able to suppress by composition epoxy resin The removing etc. between sealing resin 60 and semiconductor chip 10 and electric wire 30 that solidfied material is constituted.
The content of the sulphur from organosulfur compound in the solidfied material of composition epoxy resin for example be preferably 1ppm with Upper 400ppm or less.Here, the sulfur content in the solidfied material of composition epoxy resin is set as the sulphur from organosulfur compound Content.Sulfur content is for example quantified as described below.Firstly, weighing the solidfied material about 5mg of composition epoxy resin, make it It burns in the internal flask full of oxygen, absorbs the burning gases generated by 5% potassium hydroxide solution.Then, it will utilize Sulfate ion amount in 5% potassium hydroxide solution of ion-chromatographic determination is scaled the sulfur content in composition epoxy resin.
By making sulfur content 1ppm or more, can effectively improve the solidfied material of above-mentioned composition epoxy resin relative to The adaptation of electric wire 30 and semiconductor chip 10.In addition, utilizing asphalt mixtures modified by epoxy resin hereinafter, can be improved by making sulfur content 400ppm The high temperature at the joint portion 40 of the solidfied material sealing of oil/fat composition takes care of characteristic.In addition, in the solidfied material of composition epoxy resin Sulfur content can be adjusted by appropriately respectively controlling ingredient and the preparation method of composition composition epoxy resin.
The pH of the solidfied material for the composition epoxy resin that semiconductor chip 10 and electric wire 30 are sealed for example is preferably 4 or more 7 hereinafter, more preferably 4.5 or more 6.5 or less.In this case, joint portion 40 is able to suppress by the composition epoxy resin Solidfied material corrosion.Therefore, it can be improved the joint reliability between electric wire 30 and electrode pad 12.
In addition, the pH of the solidfied material of composition epoxy resin can be by appropriately respectively controlling composition epoxy composite The ingredient of object and preparation method are adjusted.
Hereinafter, being described in detail to the composition epoxy resin for constituting sealing resin 60.Composition epoxy resin contains There are (A) epoxy resin and (B) curing agent.
((A) epoxy resin)
As (A) epoxy resin for including in composition epoxy resin, can be used it is all 1 intramolecular have 2 with On epoxy group monomer, oligomer, polymer, its molecular weight and molecular structure are not particularly limited.
In the present embodiment, it as (A) epoxy resin, can enumerate for example: biphenyl type epoxy resin；Bisphenol-A type ring The bisphenol-type epoxy resins such as oxygen resin, bisphenol f type epoxy resin, tetramethyl bisphenol f type epoxy resin；Stilbene type epoxy resin；Benzene The phenol aldehyde type epoxy resins such as phenol-type epoxy phenolic resin, cresol novolak type epoxy resin；Tris-phenol type epoxy resin, alkyl The polyfunctional epoxy resins such as modified tris-phenol type epoxy resin；Phenol aralkyl type asphalt mixtures modified by epoxy resin with phenylene skeleton The aralkyl-type epoxy resins such as rouge, phenol aralkyl type epoxy resin with biphenylene skeleton；Dihydroxy naphthlene type asphalt mixtures modified by epoxy resin The dimer of dihydroxy naphthlene is carried out the naphthol type epoxy resins such as epoxy resin obtained from glycidyl ether by rouge；Three shrink The epoxy resin containing triazine core such as glyceryl isocyanuric acid ester, monoallyl diglycidyl isocyanuric acid ester；Two rings penta 2 Alkene modified phenol type epoxy resin etc. is crosslinked the compound modified phenol type epoxy resin of cyclic hydrocarbon, these substances can be used alone 1 kind, also two or more kinds may be used.Wherein, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin and four The bisphenol-type epoxy resins such as methyl bisphenol F type epoxy resin and Stilbene type epoxy resin preferably have crystalline resin.
As epoxy resin (A), particularly preferably uses and contain selected from the epoxy resin indicated by following formula (1), by following Formula (2) indicate epoxy resin and by following formula (3) indicate epoxy resin at least one kind of epoxy resin.
In formula (1), Ar1Phenylene or naphthylene are indicated, in Ar1In the case where naphthylene, glycidyl ether can be tied Together in α or β.Ar2Indicate wantonly 1 group in phenylene, biphenylene and naphthylene.R5And R6Separately indicate The alkyl of carbon atom number 1~10.The integer that g is 0~5, the integer that h is 0~8.n3Indicate the degree of polymerization, average value is 1~3.
In formula (2), there are multiple R9Separately indicate the alkyl of hydrogen atom or carbon atom number 1~4.n5Indicate poly- Right, average value is 0~4.
In formula (3), there are multiple R10And R11Separately indicate the alkyl of hydrogen atom or carbon atom number 1~4.n6Table Show the degree of polymerization, average value is 0~4.
(A) content of epoxy resin relative to composition epoxy resin integrally be preferably 3 mass % or more, more preferably 5 Quality % or more, further preferably 8 mass % or more.Thereby, it is possible to inhibit the viscosity rising by composition epoxy resin to draw The electric wire cutting risen.In addition, the content of epoxy resin (A) relative to composition epoxy resin integrally be preferably 18 mass % with Under, more preferably 13 mass % are hereinafter, further preferably 11 mass % or less.Thereby, it is possible to inhibit to be led by water absorption rate increase The reduction etc. of the moisture-proof reliability of cause.
((B) curing agent)
As (B) curing agent for including in composition epoxy resin, such as the curing agent of polyaddition type can be roughly divided into, urged The curing agent of agent type and the curing agent of condensed type this 3 seed type.
It as the curing agent of polyaddition type used in (B) curing agent, such as can enumerate: polyamine compounds, including two Asias The aliphatic polyamines such as ethyl triamine (DETA), trien (TETA), m-xylene diamine (MXDA), diaminodiphenylmethane (DDM), the aromatic polyamines such as m-phenylene diamine (MPD) (MPDA), diamino diphenyl sulfone (DDS) and dicyandiamide (DICY), organic acid Two hydrazides etc.；Acid anhydrides, including hexahydrophthalic anhydride (HHPA), methyl tetrahydrophthalic anhydride (MTHPA) etc. are alicyclic The aromatic acids such as acid anhydrides and trimellitic anhydride (TMA), pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic dianhydride (BTDA) Acid anhydride etc.；The phenolic resin class curing agent such as linear phenol-aldehyde resin, polyvinylphenol；The alcoholization of the polysulfides such as polysulfide, thioesters, thioether Close object；The isocyanate compounds such as isocyanate prepolymer, blocked isocyanate；The organic acids such as polyester resin carboxylic-containing acid Deng.
As the curing agent of catalyst type used in (B) curing agent, can enumerate for example: benzyl dimethylamine (BDMA), The tertiary amine compounds such as 2,4,6- tri- (dimethylamino methyl) phenol (DMP-30)；2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24) imidazolium compounds such as；Lewis acids such as BF3 complex etc..
As the curing agent of condensed type used in (B) curing agent, can enumerate for example: resol；First containing hydroxyl Urea resin as the urea resin of base；Melamine resin as melamine resin containing methylol etc..
Wherein, go out from the viewpoint for improving the balance of flame resistance, moisture-proof, electrical characteristics, curability and storage stability etc. Hair, preferably phenolic resin class curing agent.As phenolic resin class curing agent, can be used it is all an intramolecular have 2 with On phenolic hydroxyl group monomer, oligomer, polymer, its molecular weight and molecular structure are not particularly limited.
As phenolic resin class curing agent used in (B) curing agent, can enumerate for example: phenol resol resins, The phenolic varnish type resins such as cresol novolac resin, bis-phenol novolaks；Polyvinylphenol；Tris-phenol type phenolic aldehyde tree The multifunctional type phenolic resin such as rouge；The phenol-formaldehyde resin modifieds such as terpene modified phenolic resin, dicyclopentadiene-modified phenolic resin；Tool There are the phenol aralkyl resin of phenylene skeleton and/or biphenylene skeleton, the naphthalene with phenylene and/or biphenylene skeleton The aralkyl-types resin such as phenol aralkyl resin；Bisphenol compounds such as bisphenol-A, Bisphenol F etc., these substances can be used alone, Also two or more kinds may be used.
As (B) curing agent, particularly preferably using at least one kind of solidification in the compound indicated by following formula (4) Agent.
In formula (4), Ar3Phenylene or naphthylene are indicated, in Ar3In the case where naphthylene, hydroxyl can be incorporated into α Or β.Ar4Indicate wantonly 1 group in phenylene, biphenylene and naphthylene.R7And R8Separately indicate carbon atom number 1~10 alkyl.The integer that i is 0~5, the integer that j is 0~8.n4Indicate the degree of polymerization, average value is 1~3.
(B) content of curing agent is integrally preferably 2 mass % or more, more preferably 3 matter relative to composition epoxy resin Measure % or more, further preferably 6 mass % or more.The epoxy composite that thereby, it is possible to obtain having sufficient mobility Object.In addition, the content of (B) curing agent is integrally preferably 15 mass % hereinafter, more preferably 11 relative to composition epoxy resin Quality % is hereinafter, further preferably 8 mass % or less.Thereby, it is possible to keep moisture-proof caused by causing to be increased by water absorption rate reliable A possibility that reduction etc. of property, are reduced.
As use phenolic resin class curing agent as in the case where (B) curing agent (A) epoxy resin with as phenolic aldehyde The compounding ratio of (B) curing agent of resinae curing agent, the epoxy radix (EP) of total epoxy and total phenolic resin class solidify Equivalent proportion (EP)/(OH) of the phenolic hydroxyl group number (OH) of agent is preferably 0.8 or more 1.3 or less.By making the above-mentioned model of equivalent proportion It encloses, is able to suppress the reduction of the curability of composition epoxy resin or the reduction of the physical property of epoxy resin cured product etc..
In composition epoxy resin, it can according to need respectively containing (C) packing material, (D) neutralizer, (E) solidification Promotor or (F) organosulfur compound.
((C) packing material)
As (C) packing material, it can be used and filled out used in general epoxy resin composition for encapsulating semiconductor Fill material, can enumerate for example: melting spherical silicon dioxide melts broken silica, crystalline silica, talcum, oxidation The inorganic filling materials such as aluminium, titanium white, silicon nitride, the organic filler materials such as organosilicon powder, polyethylene powders.Wherein, especially excellent Choosing uses melting spherical silicon dioxide.These packing materials can be used alone or two or more kinds may be used.
As the shape of (C) packing material, filled out from the rising and raising of the melt viscosity for inhibiting composition epoxy resin It fills from the perspective of the content of material, is preferably as far as possible proper sphere shape and size distribution broadness.In addition, (C) packing material can To be surface-treated using coupling agent.Furthermore it is possible to which (C) packing material is used epoxy resin or phenolic aldehyde tree as needed Rouge etc. is handled and is used in advance.As processing method at this time, have: removing solvent after being mixed using solvent Method；Directly addition into the filler material, the method etc. of mixed processing is carried out using mixing machine.
(C) content of packing material goes out from fillibility, the viewpoint of the reliability of semiconductor device of composition epoxy resin Hair, relative to composition epoxy resin entirety, preferably 65 mass % or more, more preferably 75 mass % or more are further excellent It is selected as 80 mass % or more.Thereby, it is possible to improve agent of low hygroscopicity and low heat expansion, keep moisture-proof reliability good.In addition, (C) content of packing material, from the viewpoint of improving formability, relative to composition epoxy resin entirety, preferably 93 matter % is measured hereinafter, more preferably 91 mass % are hereinafter, further preferred 86 mass % or less.Thereby, it is possible to reduce mobility reduction And the bad feelings such as the bad electric wire flowing for waiting or generating in the semiconductor device as caused by high viscosity of filling are generated in forming A possibility that condition.
((D) neutralizer)
As (D) neutralizer, can be used will be in heating composition epoxy resin or as the sealing resin of its solidfied material The substance that the acid corrosive gas generated when 60 neutralizes.Thereby, it is possible to inhibit the electrode of electric wire 30 Yu semiconductor chip 10 The corrosion (oxidative degradation) at the joint portion 40 of pad 12.As (D) neutralizer, can be used such as alkaline metal salt, particularly It is at least one kind of in the compound containing calcium constituent, the compound containing aluminium element and the compound containing magnesium elements.
As the compound containing calcium constituent used in (D) neutralizer, calcium carbonate, line borate, metasilicic acid can be enumerated Calcium etc..Wherein, from the viewpoint of the content of impurity, water resistance and low water absorption, preferred calcium carbonate more preferably utilizes titanium dioxide The precipitability calcium carbonate of carbon reaction method synthesis.
As the compound containing aluminium element used in (D) neutralizer, aluminium hydroxide, boehmite etc. can be enumerated.Its In, preferred aluminium hydroxide.In addition, more preferably being synthesized using 2 stage Bayer process as aluminium hydroxide used in (D) neutralizer Low-sodium aluminum hydroxide.
As the compound containing magnesium elements used in (D) neutralizer, hydrotalcite, magnesia, magnesium carbonate can be enumerated Deng.Wherein, from the viewpoint of the content of impurity and low water absorption, particularly preferably using the hydrotalcite indicated by following formula (5).
MaAlb(OH)2a+3b-2c(CO3)c·mH2O (5)
(in formula (5), M indicates to include at least the metallic element of Mg.A, b, c are respectively to meet 2≤a≤8,1≤b≤3,0.5 The number of≤c≤2, the integer that m is 0 or more.)
As hydrotalcite used in (D) neutralizer, such as Mg can be enumerated6Al2(OH)16(CO3)·mH2O、Mg3ZnAl2 (OH)12(CO3)·mH2O、Mg4.3Al2(OH)12.6(CO3)·mH2O etc..
It is integrally preferably 0.01 mass % or more, 10 matter relative to composition epoxy resin as the content of (D) neutralizer Measure % or less.By making the 0.01 mass % of content or more of (D) neutralizer, the addition of (D) neutralizer can be fully played Effect can be more reliably prevented from the corrosion (oxidative degradation) at the joint portion 40 of electric wire 30 and electrode pad 12, improve semiconductor The high temperature of device 100 takes care of characteristic.In addition, by making the 10 mass % of content of (D) neutralizer hereinafter, can reduce moisture absorption Rate, therefore, resistance to scolding tin cracking behavior are in the trend improved.Especially use calcium carbonate or hydrotalcite as the feelings of anticorrosive Under condition, from viewpoint similar to the above, content is integrally more preferably 0.05 mass % relative to composition epoxy resin The above 2 mass % or less.
((E) curing accelerator)
(E) as long as curing accelerator promotes the epoxy group and (B) curing agent (such as phenolic resin class of (A) epoxy resin The phenolic hydroxyl group of curing agent) cross-linking reaction substance, be able to use in general semiconductor encapsulating epoxy resin group Close curing accelerator used in object.As (E) curing accelerator, can enumerate for example: organic phosphine, four Qu Dai phosphonium compounds, Addition product, phosphonium compounds and the addition product of silane compound of phosphate glycine betaine compound, phosphine compound and naphtoquinone compounds etc. Compound containing phosphorus atoms；Institutes' examples such as 1,8- diazabicyclo (5,4,0) endecatylene -7, benzyl dimethylamine, 2-methylimidazole Compounds of nitrogen atoms such as the quaternary salt of the amidine or tertiary amine and above-mentioned amidine, amine shown etc., these substances can be used alone, Also two or more kinds may be used.
(E) content of curing accelerator is integrally preferably 0.05 mass % or more relative to composition epoxy resin, more excellent It is selected as 0.1 mass % or more.Thereby, it is possible to inhibit curability to reduce.In addition, the content of (E) curing accelerator is relative to epoxy Resin combination is integrally preferably 1 mass % hereinafter, more preferably 0.5 mass % or less.Thereby, it is possible to inhibit mobility to drop It is low.
((F) organosulfur compound)
(F) organosulfur compound is the compound in 1 molecule containing 1 or more sulphur atom.By making epoxy resin Composition contains (F) organosulfur compound, can be improved composition epoxy resin relative to semiconductor chip 10 and electric wire 30 Adaptation.It as (F) organosulfur compound, can enumerate for example: the hydrosulphonyl silanes chemical combination such as 3-mercaptopropyi trimethoxy silane Object or 3- amino -5- sulfydryl -1,2,4- triazole etc. have sulfhydryl compound, the trans- 4,5- dihydroxy -1,2- two of triazole skeleton The benzothiazoles such as the dithiane class such as thiophene alkane compound, 2- (methyl mercapto) -2- Thiazoling type compound, 2-mercaptobenzothiazole Close object, 2 mercapto ethanol, the alcohol containing sulfydryl, these substances such as 3- sulfydryl -1,2-PD can be used alone, can also be with It is used in combination of two or more.
Wherein, particularly preferably use the mercaptosilane compounds such as 3-mercaptopropyi trimethoxy silane as (F) organic sulfur Compound.Thereby, it is possible to realize that the balance relative to the adaptation and high temperature of semiconductor chip 10 and electric wire 30 keeping characteristic is excellent Different composition epoxy resin.In addition, the mercaptosilane compounds such as 3-mercaptopropyi trimethoxy silane also rise as coupling agent Effect.
(F) content of organosulfur compound is integrally preferably 0.05 mass % or more, 1 matter relative to composition epoxy resin % is measured hereinafter, particularly preferably 0.1 mass % or more, 0.5 mass % or less.Thereby, it is possible to make the solidification of composition epoxy resin The content of sulphur in object is the preferred of the composition epoxy resin for realizing the balancing good of adaptation and high temperature keeping characteristic Content.
In the composition epoxy resin for constituting sealing resin 60, further appropriate cooperation: hydroxide can according to need The aluminium corrosion inhibitor such as zirconium；The inorganic ion exchangers such as bismuth oxide hydrate；γ-glycidoxypropyltrime,hoxysilane, The coupling agents such as 3- TSL 8330, epoxy radicals silicone hydride；The colorants such as carbon black, colcother；The low stresses such as silicon rubber at Point；The release agents such as the higher fatty acids such as the native paraffins such as Brazil wax, synthetic wax, zinc stearate and its metallic salt or paraffin； The various additives such as the fire retardants such as aluminium hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphonitrile, antioxidant.
As the composition epoxy resin for constituting sealing resin 60, it can be used for example and above-mentioned each ingredient is used into mixing Machine etc. is melted in 15 DEG C~28 DEG C substances being obtained by mixing or further using kneading machines such as roller, kneader or extruders Melt the substance of substance obtained from mixing, cooling crushing later etc., appropriate adjustment as needed dispersion degree or mobility etc..
Fig. 4 is the plan view for indicating the first variation of semiconductor device 100 shown in FIG. 1.
In this variation, substrate 20 be include carry semiconductor chip 10 chip bonding pad 24 and inner lead lead Frame.In this case, it is for example made of inner lead in the connection terminal 22 that substrate 20 is arranged.Therefore, closing line 30 will be half The electrode 12 of the setting of conductor chip 10 and the connection terminal 22 being made of inner lead are connected with each other.
In the present embodiment, substrate 20 is for example made of Cu alloy or 42 alloys.In addition, about connection terminal 22, Surface portion for example by be sequentially laminated with Ag or Ni layers, Pd layers, Au layers of stacked film constitutes.In this case, it can engage High joint reliability is realized between line 30 and connection terminal 22.
Fig. 5 is the sectional view for indicating the second variation of semiconductor device 100 shown in FIG. 1.
In this variation, on substrate 20, multiple semiconductor chips 10 are layered on top of each other.In multiple semiconductor chips 10 Between the semiconductor chip 10 of any two, such as it is electrically connected to each other using electric wire 34.That is, electric wire 34 and a semiconductor chip 10 electrode pad 12 and the electrode pad 12 of another semiconductor chip 10 connect.Electric wire 34 for example can have and electric wire 30 same compositions.
At the joint portion of electric wire 34 and electrode pad 12, the alloy-layer containing Ag, Al and Pd is formed.In electric wire 34 and electrode The alloy-layer that the joint portion of pad 12 is set to, with the above-mentioned alloy-layer being arranged at the joint portion of electric wire 30 and electrode pad 12 32 have same constitute.In this case, the electric wire 34 and and electric wire for two semiconductor chips 10 being layered on top of each other in connection Between the electrode pad 12 of 34 connections, the engagement of the balancing good of moisture-proof reliability and high temperature keeping characteristic etc. also can be realized Portion.
In Fig. 5, instantiate the case where being laminated with two semiconductor chip 10 on substrate 20.In addition, this variation The composition of semiconductor device 100 is not limited to composition shown in fig. 5.It in this variation, such as can be on 20 upper layer of substrate Fold any number of semiconductor chip 10.
In the following, being illustrated to an example of the manufacturing method of the semiconductor device 100 of present embodiment.
Firstly, preparing the semiconductor chip 10 for having electrode pad 12.Semiconductor chip 10 is for example by being formed with crystalline substance It is formed after multilayer wiring layer on the chip of the elements such as body pipe, carrying out cutting to the chip makes its monolithic turn to fifty-fifty conductor chip 10 and obtain.
Then, semiconductor chip 10 is carried on the substrate 20 for have connection terminal 22.Here, not setting in substrate 20 Set configuration semiconductor chip 10 on the region of connection terminal 22.In the present embodiment, such as via being arranged on substrate 20 Die bonding material carries semiconductor chip 10 on substrate 20.
Then, the connection terminal 22 of the electrode pad 12 of semiconductor chip 10 and substrate 20 is subjected to lead using electric wire 30 Engagement.Electrode pad 12 and connection terminal 22 are electrically connected as a result,.Above-mentioned wire bonding is for example used with those skilled in the art Based on Au electric wire carries out the general condition of wire bonding, carried out under the inactive gas atmospheres such as nitrogen, argon gas or helium.Separately Outside, as engagement device, the engagement device etc. of Cu electric wire can be used for example.
Then, semiconductor chip 10 and electric wire 30 are sealed using composition epoxy resin.Composition epoxy resin is for example Solidified forming is carried out using manufacturing process such as transmitting forming, compression molding or injection mouldings.
Then, 10 minutes~24 hours or so are spent in 80 DEG C~200 DEG C or so of temperature to composition epoxy resin Time carry out after solidify.The sealing resin 60 being made of the solidfied material of composition epoxy resin is formed as a result,.Solidification after above-mentioned Particularly preferably carried out under conditions of 150 DEG C~200 DEG C, 2~16 hours.
According to the present embodiment, such as described above semiconductor device 100 is formed.
More than, according to the present embodiment, in the electricity by being constituted using first metal material of the Ag as main component and containing Pd Line 30 with by the joint portion 40 of the electrode pad 12 constituted with Al the second metal material as main component, be formed with containing Ag, The alloy-layer of Al and Pd.Thereby, it is possible to improve the joint reliability between electric wire and electrode pad.
Embodiment
In the following, being illustrated to the embodiment of the present invention.
(preparation of composition epoxy resin)
For Production Example 1~3, composition epoxy resin is prepared as described below respectively.
Firstly, each ingredient cooperated according to table 1 is mixed at 15~28 DEG C using mixing machine.Then, it will obtain Mixture is in 70~100 DEG C of progress roller mixings.Then, the cooling, crushing by the mixture after mixing, obtains epoxy composite Object.In addition, the details of each ingredient in table 1 is as described below.In addition, the unit in table 1 is quality %.
(A) epoxy resin
EP-BA (phenol aralkyl type epoxy resin with biphenylene skeleton): NC3000P, Japanese chemical drug strain formula meeting Society's manufacture, epoxide equivalent 276, Cl ion concentration 280ppm
(B) curing agent
HD-BA (phenol aralkyl resin with biphenylene skeleton): MEH-7851SS, bright and chemical conversion Co. Ltd. system It makes, hydroxyl equivalent 203
(C) packing material
Silica: FB-820, Deuki Kagaku Kogyo Co., Ltd's manufacture, 26.5 μm, 105 μm of average grain diameter or more of Grain is 1% or less
(D) neutralizer
Hydrotalcite: DHT-4A (registered trademark) (in above-mentioned formula (5), hydrotalcite that a 4.3, b 2, c are 1) consonanceization Learn Industrial Co., Ltd's manufacture
(E) curing accelerator
Triphenylphosphine (TPP), Hokko Chemical Industry Co., Ltd.'s manufacture
(F) organosulfur compound
Compound 1:3- mercaptopropyi trimethoxy silane
Compound 2:3- amino -5- sulfydryl -1,2,4- triazole
(G) other ingredients
Coupling agent: epoxy radicals silicone hydride
Colorant: carbon black
Release agent: Brazil wax
(spiral flow)
Using low pressure transmitting forming machine (Shang Longjing machine Co., Ltd. (Kohtaki Precision Machine Co., Ltd.) " KTS-15 " manufactured), in the mold according to the spiral flow measurement of EMMI-1-66, in 175 DEG C of mold temperature, note Enter pressure 6.9MPa, under conditions of 120 seconds curing times, is injected separately into the composition epoxy resin of Production Example 1~3, measurement stream Dynamic length.Unit in table 1 is cm.
(gel time)
After melting the composition epoxy resin of Production Example 1~3 respectively, with shovel While son is tempered, it is measured to the time until solidifying.Unit in table 1 is the second.
(measurement of pH)
By the solidfied material of the composition epoxy resin of Production Example 1~3,175 DEG C of mold temperature, injection pressure 7.5MPa, Under conditions of 2 minutes curing times using low pressure transmitting forming machine " KTS-15 " of manufacture (Shang Longjing machine Co., Ltd.) carry out at Shape obtains the test film of 50mm φ × 3mm.Then, solidify after obtained test film being carried out under conditions of 175 DEG C, 4 hours Crushing of Ultrafine is carried out later, obtains pulverized product.Then, the distilled water of 50ml is added in the pulverized product of 5g, is put into coated with Teflon The container of grand (registered trademark) lining carries out processing in 20 hours at 125 DEG C, obtains extracting solution.Extracting solution is measured using pH meter PH.
(measurement of sulfur content)
The solidfied material about 5mg for weighing the composition epoxy resin of Production Example 1~3 makes it in the internal flask for being full of oxygen Interior burning.Absorb resulting burning gases by 5% potassium hydroxide solution.According to the 5% of utilization ion-chromatographic determination Sulfate ion amount in potassium hydroxide solution, the sulfur content being scaled in composition epoxy resin.Unit in table 1 is ppm.
[table 1]
(production of semiconductor device)
For Examples 1 to 7, comparative example 1~2, semiconductor device is made as described below respectively.
It will be provided with the TEG (Test for the electrode pad being made of the metal material of Al purity 95.0% (Cu5.0%) Element Group: testing element group) chip (3.5mm × 3.5mm) is mounted in 352 pins (pin) BGA (substrate is thickness The bismaleimide-triazine resin of 0.56mm/glass cloth substrate, package size be 30mm × 30mm and with a thickness of 1.17mm) on.Then, using the electric wire by being constituted according to the metal material of table 2 and 3, the electrode pad of TEG chip is (following Referred to as electrode pad) and the connection terminal (hereinafter referred to as connection terminal) of BGA substrate with 80 μm of progress wire bondings of line spacing.
To thus obtained tectosome, using low pressure transmitting forming machine (" Y-series " of TOWA manufacture), in mold temperature 175 DEG C, injection pressure 6.9MPa, under conditions of 2 minutes curing times, use the epoxy by obtaining according to the Production Example of table 2 and 3 Resin combination is sealed forming, makes 352 pin BGA package parts.Then, by obtained BGA package part 175 DEG C, it is 4 small When under conditions of carry out after solidify, obtain semiconductor device.
(tem analysis)
To Examples 1 to 7, comparative example 1~2, respectively by obtained semiconductor device in 175 DEG C, 16 hours, atmosphere Under the conditions of heat after, the structure at the joint portion of electric wire and electrode pad is analyzed using transmission electron microscope (TEM).
In the semiconductor device of Examples 1 to 7, it observed at the joint portion of electric wire and electrode pad containing Ag, Al With the alloy-layer of Pd.On the other hand, in the semiconductor device of comparative example 1~2, do not have at the joint portion of electric wire and electrode pad Observe the alloy-layer containing Ag, Al and Pd.
(moisture-proof reliability)
To the semiconductor device of Examples 1 to 7, comparative example 1~2, carry out HAST (unsaturated anti-moisture test).HAST root According to IEC68-2-66, carried out under 130 DEG C of temperature, humidity 85%RH, application voltage 20V, 96 hours experimental conditions.To test Semiconductor device afterwards measures the resistance value between electric wire and electrode pad, will show and be less than relative to initial resistivity value The case where the case where 110% resistance value is evaluated as ◎, would indicate that 110% or more 120% resistance value below is evaluated as zero, Would indicate that greater than 120% resistance value the case where be evaluated as ×.
(high temperature keeping characteristic)
To the semiconductor device of Examples 1 to 7, comparative example 1~2, carry out HTSL (high temperature keeping is tested).HTSL is in temperature 185 DEG C, carry out under 1000 hours experimental conditions.To the semiconductor device after test, measure between electric wire and electrode pad Resistance value will be evaluated as ◎ the case where showing the resistance value less than 110% relative to initial resistivity value, would indicate that 110% The case where the case where above 120% resistance value below is evaluated as zero, would indicate that the resistance value greater than 120% be evaluated as ×.
(adaptation)
For Examples 1 to 7, comparative example 1~2, respectively to 4 obtained semiconductor devices, in 85 DEG C of relative humidity After being handled 168 hours in the environment of 85%, carry out IR reflow treatment (260 DEG C).Then, at ultrasonic flaw detecting device observation Inside semiconductor device after reason, the stripping area that sealing resin is removed from semiconductor chip or electric wire is calculated.It will be for whole Semiconductor device, the case where stripping area is less than 5% is evaluated as ◎, the situation for being 5% or more 10% or less by stripping area The case where being evaluated as zero, by stripping area being more than 10% be evaluated as ×.
[table 2]
[table 3]
As described above, observed at the joint portion of electric wire and electrode pad containing Ag, Al and Pd in Examples 1 to 7 Alloy-layer.In such Examples 1 to 7, obtained in terms of high temperature takes care of characteristic, moisture-proof reliability test and adaptation Good result.Wherein, in embodiment 1,2,3,7, obtained compared with other embodiments, adaptation it is especially excellent half Conductor device.In addition, having obtained compared with Example 7 in Examples 1 to 6, high temperature takes care of the especially excellent semiconductor of characteristic Device.In addition, having obtained compared with other embodiments in embodiment 1,2,4,5,7, moisture-proof reliability is especially excellent partly to be led Body device.
This application is advocated based on being willing to 2013-129375 by the Japanese patent application laid filed an application on June 20th, 2013 Priority, the entire disclosure is incorporated herein.

Claims (5)

1. a kind of semiconductor device, which is characterized in that have:
The semiconductor chip for having electrode pad；With
The electric wire being electrically connected with the electrode pad,
The electric wire by being constituted using first metal material of the Ag as main component and containing Pd,
The electrode pad by being constituted with Al the second metal material as main component,
At the joint portion of the electric wire and the electrode pad, it is formed with the alloy-layer containing Ag, Al and Pd,
The alloy-layer, in the one end for being located at the electric wire side, compared with the other end for being located at the electrode pad side, Ag It is low with the ratio of components of Pd height and the ratio of components of Al.
2. semiconductor device according to claim 1, it is characterised in that:
The content for constituting the Ag in first metal material of the electric wire is 85 weight % or more, 99.5 weight % or less.
3. semiconductor device according to claim 1 or 2, it is characterised in that:
The semiconductor chip and the electric wire are sealed using the solidfied material of composition epoxy resin,
The content of sulphur in the solidfied material of the composition epoxy resin is 1ppm or more 400ppm or less.
4. semiconductor device according to claim 3, it is characterised in that:
The solidfied material of the composition epoxy resin contains organosulfur compound.
5. semiconductor device according to claim 3, it is characterised in that:
The pH of the solidfied material of the composition epoxy resin is 4 or more 7 or less.
CN201480034970.1A 2013-06-20 2014-06-11 Semiconductor device Active CN105308731B (en)

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