TWI477551B - Semiconductor-encapsulating resin composition and semiconductor device - Google Patents

Description

Resin composition for semiconductor encapsulation and semiconductor device

The present invention relates to a resin composition for semiconductor encapsulation and a semiconductor device.

The semiconductor device is sealed based on the protection of the semiconductor element, the securing of the electrical insulation, the ease of handling, and the like, and is excellent in productivity, cost, reliability, etc., so that the transfer molding by the epoxy resin composition becomes Mainstream. In order to meet the market requirements for miniaturization, weight reduction, and high performance of electronic equipment, not only the integration of semiconductor components, but also the miniaturization and high density of semiconductor devices, the joint technology such as surface mounting has begun to develop and be practical. Chemical. This technical trend has also spread to the resin composition for semiconductor sealing, and the performance is required to be highly diverse and diversified year by year.

For example, the solder used for surface mounting is progressing towards lead-free solder in the context of environmental issues. The melting point of lead-free solder is higher than that of conventional lead/tin solder. The reflow soldering temperature is increased from 220~240°C to 240~260°C, which is prone to resin cracking or peeling in semiconductor devices. It is known that the resin composition for sealing is insufficient in solder resistance.

In addition, in the conventional resin composition for sealing, a bromine-containing epoxy resin and cerium oxide are used as a flame retardant for the purpose of imparting flame retardancy, but in recent years, from the viewpoint of environmental protection and safety improvement, The abolition of these compounds is high.

In addition, in recent years, electronic devices such as automobiles and mobile phones, which are premised on outdoor use, have become widespread, and in such applications, operational reliability in a more demanding environment than conventional personal computers or home electric appliances is required. In particular, in automotive applications, high-temperature storage characteristics are required as one of the necessary requirements, and the semiconductor device must be able to maintain its operation and function at a high temperature of 150 to 180 °C.

As a conventional technique, a method of combining an epoxy resin having a naphthalene skeleton and a phenol resin curing agent having a naphthalene skeleton to improve high-temperature storage characteristics and solder resistance is proposed (Patent Documents 1 and 2), or by blending The phosphoric acid compound is a method for improving the high-temperature storage property and the flame resistance (Patent Documents 3 and 4). However, it is difficult to balance the flame resistance, the continuous moldability, and the solder resistance. As described above, in the case of miniaturization and popularization of an in-vehicle electronic device, it is required to provide a sealing resin composition which satisfies the flame resistance, the solder resistance, the high-temperature storage property, and the continuous moldability in a well-balanced manner.

Patent Document 1: Japanese Patent Laid-Open Publication No. 2007-31691

Patent Document 2: Japanese Patent Laid-Open No. Hei 06-216280

Patent Document 3: Japanese Patent Laid-Open Publication No. 2003-292731

Patent Document 4: Japanese Patent Laid-Open Publication No. 2004-43613

The present invention provides a semiconductor sealing resin composition excellent in flame resistance, solder resistance, high-temperature storage property, and continuous moldability, and a semiconductor device using the semiconductor sealing resin composition.

Such an object is achieved by the present invention described in the following [1] to [6].

[1] A resin composition for semiconductor encapsulation, which comprises a phenol resin (A) containing a component represented by the following general formula (1); an epoxy resin (B); and an inorganic filler (C).

[Chemical 1]

(In general formula (1), two hydroxy groups bonded to the same naphthalene group are bonded to different carbon atoms on the naphthalene ring, and R1 is independently a hydrocarbon group having 1 to 60 carbon atoms, and a is independently 0 to 5 The integer, b is independent of each other from 0 to 4. The integer is an integer from 1 to 10.

[2] The resin composition for semiconductor encapsulation according to [1], wherein the phenol resin (A) contains a component in which R1 in the above general formula (1) is a group represented by the following general formula (2).

[Chemical 2]

(In the general formula (2), R2 and R3 are each independently a hydrogen atom and a hydrocarbon group having 1 to 3 carbon atoms, and R4 is independently a hydrocarbon group having 1 to 3 carbon atoms, and c is independently an integer of 0 to 4, and m is 1 An integer of ~5.)

[3] The resin composition for semiconductor encapsulation according to [1] or [2] wherein the phenol resin (A) is contained in the total phenol resin (A) and contains n=0 to 2 in the above general formula (1). The component is 50% by mass or more and 100% by mass or less.

[4] The resin composition for semiconductor encapsulation according to any one of [1] to [3] wherein the phenol resin (A) is contained in the total phenol resin (A) and contains the above general formula (1) The component of =0 is 25 mass% or more and 70 mass% or less.

[5] The resin composition for semiconductor encapsulation according to any one of [2] to [4] wherein the phenol resin (A) is in an area conversion algorithm of a gel permeation chromatography (GPC) measurement method, In the total phenol resin (A), R1 is a component of the group represented by the above general formula (2) of 20% by area or more and 80% by area or less.

[6] A semiconductor device comprising the semiconductor encapsulating resin composition according to any one of [1] to [5], wherein the semiconductor element is sealed.

According to the present invention, it is possible to provide a semiconductor sealing resin composition excellent in flame resistance, solder resistance, high-temperature storage property, and continuous moldability, and a semiconductor device using the semiconductor sealing resin composition.

The above and other objects, features and advantages of the present invention will become apparent from

Preferred embodiments of the resin composition for semiconductor encapsulation and the semiconductor device of the present invention will be described in detail with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and the repeated description is omitted.

The resin composition for semiconductor encapsulation of the present invention is characterized by comprising a phenol resin (A) represented by the following general formula (1); an epoxy resin (B); and an inorganic filler (C).

[Chemical 3]

In the above general formula (1), the two hydroxyl groups bonded to the same naphthalene group are bonded to different carbon atoms on the naphthalene ring, and R1 is independently a hydrocarbon group having 1 to 60 carbon atoms, and a is independently 0 to 5 The integer, b is independent of each other as an integer from 0 to 4. n is an integer from 1 to 10. The phenol resin (A) of the present invention contains the first component in which n is an integer of 1 to 10 in the above general formula (1) and the second component in which the n in the general formula (1) is an integer of 0.

In the present invention, the phenol resin (A) represented by the general formula (1) (hereinafter sometimes referred to as "phenol resin (A)") is used. The phenol resin contains a naphthalene skeleton and a stretched phenyl skeleton in the molecule. Thereby, the flame resistance is improved, the elastic modulus of the cured product is kept low, and the hydrophobicity is enhanced, thereby also improving the solder resistance. This is considered to be due to the high content rate per repeat unit of the aromatic structure.

Further, since the phenol resin (A) has two phenolic hydroxyl groups on the naphthalene ring in the structure, the hydroxyl group reacts with the epoxy group of the epoxy resin, and the distance between the crosslinking points is locally shortened, so that the semiconductor sealing is used. The cured product of the resin composition has a high glass transition temperature and exhibits excellent hardenability characteristics.

The method of improving the high-temperature storage property and the flame resistance is, for example, a combination of an epoxy resin having a naphthalene skeleton and a phenol resin curing agent having a naphthalene skeleton, or a compound containing phosphoric acid (Patent Documents 3 and 4). The curability of these resin compositions is lowered, and the continuous formability is lowered.

On the other hand, the resin composition for semiconductor encapsulation using the phenol resin (A) is composed of a phenyl aralkyl skeleton and a naphthalene diol skeleton in the structure of the phenol resin (A). The cured product formed of the resin composition for semiconductor encapsulation of the phenol resin (A) is characterized in that it has high solder resistance and flame resistance, and has both high-temperature storage property and continuous moldability.

The phenol resin (A) of the present invention is a resin composition for semiconductor encapsulation, and the number of repetition units n of the phenol resin (A) is not particularly limited as long as it is 0 to 10. Better n is 0~5. In this case, when the resin composition for semiconductor encapsulation is heated, melted, mixed or kneaded, kneading can be satisfactorily performed. The special system is n=0~2. If it is this range, the resin composition for semiconductor sealing which is excellent in fluidity can also be obtained.

The content of the component of n = 0 to 2 in the phenol resin (A) is not particularly limited, but is preferably 50 to 100% by mass of the component having n = 0 to 2 in the total phenol resin (A) (hereinafter, not particularly Expressly, "~" means including the upper and lower limits). In addition, the content of the component of n=0 to 2 in the phenol resin (A) is preferably 60% by mass or more, and more preferably 70% or more, based on the total phenol resin (A). When the content of the component of n=0 to 2 in the phenol resin (A) is within the above range, a resin composition for semiconductor encapsulation excellent in fluidity can be obtained.

The upper limit of the content ratio of the component of the phenol resin (A) of n = 0 is not particularly limited, and is preferably 70% by mass or less, and more preferably 60% by mass or less based on the total amount of the phenol resin (A). When the content ratio of the component of the n=0 is within the above upper limit, a resin composition for semiconductor encapsulation excellent in flame resistance and solder resistance can be obtained. The lower limit of the content ratio of the n=0 component of the phenol resin (A) is not particularly limited, but is preferably 25% by mass or more, and more preferably 35% by mass or more. When the content ratio of the component of the n=0 is within the above lower limit value, the adhesion of the phenol resin alone is less likely to occur, and the resin composition for semiconductor sealing using the phenol resin (A) can exhibit superior flow characteristics and resistance to sticking. Sexual and low water absorption. In order to set the content ratio of the component of n=0 to the above preferred range, it can be adjusted by the method described later.

In addition, as described in Patent Document 1, an epoxy resin having a naphthalene skeleton and a phenol resin curing agent having a naphthalene skeleton are used, and in order to improve high-temperature storage characteristics and solder resistance, the viscosity is high and the fluidity is lowered. In the case where the viscosity is lowered, there is a problem in that the resin composition adheres to each other during standby in the molding apparatus (25 ° C to 30 ° C), and conveyance failure occurs.

On the other hand, the resin composition for semiconductor encapsulation using the phenol resin (A) of the present invention is superior in balance between fluidity and sticking resistance.

R1 in the phenol resin (A) represented by the general formula (1) is a hydrocarbon group having 1 to 60 carbon atoms, and may be the same or different from each other. When the carbon number is 60 or less, the melt viscosity of the resin composition for semiconductor encapsulation can be lowered to improve fluidity. a represents the number of substituents R1 bonded to the same naphthalene ring, and a is independently an integer of 0 to 5. More preferably, the system a is 0~3. b represents the number of substituents R1 bonded to the benzene ring, and b is independently an integer of 0 to 4. More preferably, the system b is 0~2.

R1 in the general formula (1) is not particularly limited as long as it has a carbon number of 1 to 60. For example, methyl, ethyl, propyl, n-butyl, isobutyl, tert-butyl, n-pentyl, 2-methylbutyl, 3-methylbutyl, third amyl, n-hexyl , 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2,2-dimethylbutyl, 2,3-dimethylbutyl, 2 , 4-dimethylbutyl, 3,3-dimethylbutyl, 3,4-dimethylbutyl, 4,4-dimethylbutyl, 2-ethylbutyl, 1-ethyl a butyl group, a cyclohexyl group, a phenyl group, a benzyl group, a methylbenzyl group, an ethylbenzyl group, a naphthyl group, a biphenyl group, or the like, which may be a repeating bond of such a hydroxyl group, or a combination of two or more hydroxyl groups. . Preferably, it has an aromatic ring structure such as a phenyl group, a benzyl group, a methylbenzyl group, an ethylbenzyl group, a naphthyl group or a biphenyl group, and more preferably corresponds to a group represented by the following general formula (2). Benzyl, methylbenzyl, ethylbenzyl. In the case where the substituent R1 has an aromatic ring structure, it is preferable from the viewpoint of improving the moisture resistance of the resin composition for sealing a semiconductor, and further, the substituent R1 is a structure of the general formula (2). In the case, it is preferred from the viewpoint that a substituent can be introduced at a low cost. The bonding position of the substituent R1 is not particularly limited, but in the case of a carbon atom bonded to a naphthalene ring, it is preferable from the viewpoint of suppressing the auto-oxidation phenomenon of the hydroxyl group and improving the storage stability.

[Chemical 4]

In the general formula (2), R2 and R3 are each independently a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and R4 is independently a hydrocarbon group having 1 to 3 carbon atoms bonded to any position on the benzene ring, and c is 0 to 4 The integer, the number of repeating units m is an integer from 1 to 5. More preferably, c is an integer from 0 to 3. Further, it is more preferable that the m is an integer of 1 to 3. Here, the total number of m of the general formula (2) in the above general formula (1) is preferably an integer of 1 to 5, more preferably an integer of 1 to 3.

The content ratio of the component of the phenol resin (A) which is a group represented by the general formula (2) is not particularly limited, and it is relative to the phenol resin in the area conversion algorithm measured by gel permeation chromatography (GPC) described later. The total amount, the upper limit of the content ratio is preferably 80 area% or less, more preferably 65 area% or less. When it is in the above upper limit, a resin composition for a semiconductor excellent in reactivity and fluidity with an epoxy resin can be obtained. The lower limit is preferably 20% by area or more, and more preferably 40% by area or more. If it is within the above lower limit range, moisture resistance and preservability are superior.

The ratio of the component belonging to the group represented by the general formula (2) with respect to the total amount of the phenol resin (A) can be calculated, for example, as follows.

The phenol resin (A) was subjected to gel permeation chromatography (GPC) measurement, and the molecular weight of each component corresponding to the detected peak was obtained by polystyrene conversion, and the ratio of the detected peak area was calculated to correspond to the The components of the detected peaks contained a ratio.

Further, each peak structure of the graph obtained by GPC measurement can be separated into fractions and confirmed by NMR analysis or FD-MS analysis.

The gel permeation chromatography (GPC) measurement of the present invention was carried out as follows. The GPC device consists of a pump, a syringe, a protective column, a column, and a detector. For the measurement, tetrahydrofuran (THF) was used as a solvent. The flow rate of the pump was 0.5 ml/min. The protective column is a commercially available protective column (for example, TSK GUARDCOLUMN HHR-L manufactured by Tosoh Co., Ltd.: diameter 6.0 mm, tube length 40 mm), and the column is a commercially available polystyrene gel column (Tosoh ( The stock system TSK-GELGMHHR-L: diameter 7.8mm, tube length 30mm) multiple in-line connection. The detector uses a differential refractometer (RI detector, for example, a differential refractive index (RI) detector W2414 manufactured by WATERS Corporation). The inside of the protective column, column and detector was stabilized at 40 °C before the measurement. The sample was prepared by adjusting to a THF solution of a phenol resin having a concentration of 3 to 4 mg/ml, and measuring it by injecting about 50 to 150 μl into a syringe. In the analysis of the sample, a standard curve prepared by borrowing a polystyrene (hereinafter referred to as PS) standard sample was used. The standard curve plots the logarithm of the PS molecular weight and the PS peak measurement time (holding time), using the regression three-times. As a standard PS sample for standard curve preparation, model S-1.0 (peak molecular weight 1060), S-1.3 (peak molecular weight 1310), and S-2.0 (peak molecular weight) of Shodex Stander SL-105 series manufactured by Showa Denko Co., Ltd. 1990), S-3.0 (peak molecular weight 2970), S-4.5 (peak molecular weight 4490), S-5.0 (peak molecular weight 5030), S-6.9 (peak molecular weight 6930), S-11 (peak molecular weight 10700), S- 20 (peak molecular weight 19,900).

The phenol resin (A) used in the resin composition for semiconductor encapsulation of the present invention can be, for example, a biphenyl compound represented by the following general formula (3) and naphthalene represented by the following general formula (4). The alcohol compound is obtained by carrying out a reaction under an acidic catalyst. In the case where R1 is a structure represented by the general formula (2), the benzyl group represented by the following general formula (5) or the following general formula (6) is used in the reaction of the phenol resin or after the reaction of the phenol resin. The base compound introduces a substituent using an acidic catalyst.

[Chemical 5]

In the formula, X represents a hydroxyl group, a halogen atom, and an alkoxy group having 1 to 4 carbon atoms. R1 is independently a hydrocarbon group having 1 to 60 carbon atoms, and b is independently an integer of 0 to 4. Here, the R1 and b systems of the general formula (3) are the same as the above general formula (1).

[Chemical 6]

In the formula, two hydroxyl groups bonded to the same naphthyl group are bonded to different carbon atoms on the naphthalene ring, and R1 is independently a hydrocarbon group having 1 to 60 carbon atoms, and a is independently an integer of 0 to 5. Here, the R1 and a systems of the general formula (4) are the same as the above general formula (1).

[Chemistry 7]

Y in the formula is not particularly limited as long as it is a substituent reactive with a naphthalene ring. For example, it represents a hydroxyl group, a halogen atom, and an alkoxy group of carbon number 1-4. R2 and R3 are each independently a hydrogen atom and a hydroxyl group having 1 to 3 carbon atoms, and R4 is independently a hydroxyl group having 1 to 3 carbon atoms, and c is independently an integer of 0 to 4. Here, R2, R3, R4, and c of the general formula (5) are the same as the above general formula (2).

[化8]

In the formula, R2 and R3 are each independently a hydrogen atom and a hydrocarbon group having 1 to 3 carbon atoms, and R4 is independently a hydrocarbon group having 1 to 3 carbon atoms, and c is independently an integer of 0 to 4. Here, R2, R3, R4, and c of the general formula (6) are the same as the above general formula (2).

The exophenyl compound used in the raw material of the phenol resin (A) is not particularly limited as long as it is a chemical structure represented by the general formula (3). For example, 4,4'-bischloromethylbiphenyl, 4,4'-bisbromomethylbiphenyl, 4,4'-diiodomethylbiphenyl, 4,4'-bishydroxymethylbiphenyl , 4,4'-bismethoxymethylbiphenyl, 3,3',5,5'-tetramethyl-4,4'-dichloromethylbiphenyl, 3,3',5,5' -tetramethyl-4,4'-bisbromomethylbiphenyl, 3,3',5,5'-tetramethyl-4,4'-diiodomethylbiphenyl, 3,3',5, 5'-tetramethyl-4,4'-bishydroxymethylbiphenyl, 3,3',5,5'-tetramethyl-4,4'-bismethoxymethylbiphenyl, and the like. These may be used alone or in combination of two or more.

Among these, from the viewpoint of easiness of availability, 4,4'-bismethoxymethylbiphenyl is preferred, and from the viewpoint of reducing the polymerization catalyst and reducing impurities, it is preferably 4 , 4'-dichloromethylbiphenyl.

Further, when X is a halogen atom, since hydrogen halide generated by the reaction acts as an acidic catalyst, it is not necessary to add an acidic catalyst to the reaction system, and the reaction can be quickly started by adding a small amount of water.

The hydroxynaphthalene compound used in the phenol resin (A) raw material is not particularly limited as long as it is a chemical structure represented by the general formula (4). Preferably, the dihydroxynaphthalene compound in which the two hydroxyl groups are bonded to each other at a position adjacent to the naphthalene skeleton. When the hydroxyl group bonding sites are not adjacent, the semiconductor resin composition can exhibit good hardenability and strength. Specific examples of the dihydroxynaphthalene compound in which the hydroxy bonding sites are not adjacent may, for example, be 2,7-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,4-dihydroxynaphthalene or 2,6-dihydroxynaphthalene. 1,6-dihydroxynaphthalene, and the like. These may be used alone or in combination of two or more.

Among these, from the viewpoint that the softening point of the obtained phenol resin is low and it is easy to melt-knead with an epoxy resin, 1,6-dihydroxynaphthalene is preferable.

The compound represented by the general formula (5) used in the production of the phenol resin (A) is not particularly limited, and examples thereof include benzyl alcohol, benzyl chloride, benzyl bromide, benzyl methyl ether, and benzyl ethyl group. Ether, methylbenzyl chloride, ethylbenzyl chloride, isopropylbenzyl chloride, 2-phenyl-2-chloropropane, 1-phenylethyl chloride. These may be used alone or in combination of two or more.

Among these, from the viewpoint of not using an acidic catalyst, a benzyl chloride or a benzyl bromide is preferred.

The compound represented by the general formula (6) used in the production of the phenol resin (A) is not particularly limited, and examples thereof include dibenzyl ether, di(methylbenzyl)ether, and di(ethylbenzyl)ether. Di(isopropylbenzyl)ether and the like. These may be used alone or in combination of two or more kinds thereof, and the compound represented by the above general formula (5) may be used in combination.

The acidic catalyst used in the reaction of the biphenyl compound represented by the general formula (3) and the naphthalenediol compound represented by the general formula (4) is not particularly limited, and examples thereof include formic acid, oxalic acid, and Toluenesulfonic acid, hydrochloric acid, sulfuric acid, phosphoric acid, acetic acid, Lewis acid, and the like.

The method for synthesizing the phenol resin (A) used in the present invention is not particularly limited, and for example, 0.1 to 0.8 mol of the exophenyl compound and benzyl compound 0 to 0 to the dihydroxynaphthalene compound 1 mol can be used. 2 Moule, acid catalyst 0.01~0.05 m, at a temperature of 80~170 °C, the gas and water generated by the nitrogen flow are discharged to the outside of the system, and the reaction is carried out for 1 to 20 hours, and the residue remains after the reaction is completed. The unreacted monomer (for example, a benzyl compound or a dihydroxynaphthalene compound), a reaction by-product (for example, hydrogen halide, water, methanol), a catalyst, and the like are distilled off by a method such as distillation under reduced pressure or steam distillation.

In addition, by adding a benzyl compound and the above-mentioned acidic catalyst to the previously synthesized phenol resin, the generated gas and water are discharged to the outside of the system by a nitrogen stream, and the reaction is carried out at a temperature of 80 to 170 ° C. After ~20 hours, the residual unreacted monomer (such as benzyl compound or dihydroxynaphthalene compound), reaction by-products (such as hydrogen halide, water, methanol), catalyst by vacuum distillation, steam distillation, etc. Obtained by distillation.

Further, when the X of the phenyl compound or the Y of the benzyl compound is a halogen atom, by using a certain amount of water in the reaction system, the acid gas generated can be used as the acid gas without using an acid catalyst. The catalyst is used to obtain the phenol resin (A).

The method for synthesizing the content of the n=0 component in the phenol resin (A) is not particularly limited. For example, in the above synthesis method, the dihydroxynaphthalene compound/extended biphenyl group can be changed by adjusting the amount of the acid catalyst. The filling ratio of the compound, the adjustment of the reaction temperature, and the sequential addition of the dihydroxynaphthalene compound to the reaction are controlled.

Specifically, when the ratio of the component of the n=0 component in the phenol resin (A) is increased, for example, the amount of the acid catalyst is reduced, the filling ratio of the dihydroxynaphthalene compound/extended biphenyl compound is increased, and the ratio is lowered. A reaction temperature or a method of sequentially adding a dihydroxynaphthalene compound to the reaction. Alternatively, a dihydroxynaphthalene compound may be added to the phenol resin after the reaction, or a dihydroxynaphthalene compound may be blended at the time of mixing the resin composition. At this time, the dihydroxynaphthalene compound can be the n=0 body component of the phenol resin (A).

The method of controlling the ratio of the phenol resin (A) having the structure of the general formula (2) contained in the phenol resin (A) is not particularly limited, and for example, the above-mentioned acid catalyst can be reacted by changing the phenol resin and the benzyl compound. The ratio of the amount of the phenol resin (A) having the structural unit represented by the formula (2) is adjusted by adjusting the amount of the phenol resin/phenyl compound, or changing the reaction temperature.

Specifically, as a method of increasing the proportion of the phenol resin (A) having the structure of the general formula (2) contained in the phenol resin (A), the amount of the acid catalyst can be increased, and the phenol compound/benzyl compound can be lowered. The ratio of the filling ratio, the reaction temperature is increased, and the like, and the ratio of the phenol resin (A) having the structural unit represented by the formula (2) is increased.

Further, by adopting this method, the average value of n of the phenol resin (A) is sometimes lowered at the same time. The method of maintaining the average value of n at a constant value is not particularly limited, and for example, a method of sequentially adding a benzyl compound to the system before the end of the middle stage of the synthesis reaction of the phenol resin (A) is mentioned.

The resin composition for semiconductor encapsulation of the present invention can be used in combination with other curing agents in a range that does not impair the effects obtained by using the phenol resin (A).

The curing agent to be used in combination is not particularly limited, and examples thereof include a polyaddition hardening agent, a catalyst type curing agent, and a condensation type curing agent.

Examples of the hardening agent for polyaddition molding include aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and methylguanidinoamine; diaminodiphenylmethane, m-phenylenediamine, and diamine. An aromatic polyamine such as diphenyl hydrazine, a polyamine compound such as dicyanodiamide or an organic acid bismuth; an alicyclic acid anhydride such as hexahydrophthalic anhydride or methyltetrahydrophthalic anhydride, or trimellitic anhydride. An acid anhydride such as an aromatic acid anhydride such as pyromellitic acid or diphenyl ketone tetracarboxylic acid; a polyphenol compound such as a novolak type phenol resin or a phenol polymer; or a polysulfide, a thioester or a thioether; A compound; an isocyanate compound such as an isocyanate prepolymer or a blocked isocyanate; an organic acid such as a carboxylic acid-containing polyester resin or the like.

The catalyst type hardener may, for example, be a tertiary amine compound such as benzyldimethylamine (BDMA) or 2,4,6-dimethylaminomethylphenol; 2-methylimidazole, 2 An imidazole compound such as ethyl-4-methylimidazole; a Lewis acid such as BF ₃ complex or the like.

Examples of the condensing type hardening agent include a phenol resin-based curing agent such as a novolac type phenol resin and a resol type phenol resin; a urea resin such as a hydroxymethyl group-containing urea resin; and a melamine resin containing a methylol group; Melamine resin and the like.

Among these, a phenol resin-based curing agent is preferred from the viewpoint of balance between flame resistance, moisture resistance, electrical properties, curability, storage stability and the like. The phenol resin-based curing agent refers to a monomer, an oligomer, and a polymer having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited, and examples thereof include a phenol novolak resin and a cresol novolac. A phenolic varnish type resin such as a varnish resin or a naphthol novolac resin; a polyfunctional phenol resin such as a trisphenol methane phenol resin; a modified phenol resin such as a terpene modified phenol resin or a dicyclopentadiene modified phenol resin; a phenolic aralkyl resin having a phenyl group skeleton and/or a phenyl group extending; a aralkyl type resin having a phenyl group and/or a phenyl group aralkyl resin; and A bisphenol compound such as phenol A or bisphenol F; these may be used alone or in combination of two or more. Among these, from the viewpoint of curability, the hydroxyl equivalent is preferably 90 g/eq or more and 250 g/eq or less.

When the other curing agent is used in combination, the lower limit of the blending ratio of the phenol resin (A) is preferably 15% by mass or more, more preferably 25% by mass or more, and particularly preferably 35% by mass based on the total curing agent. %the above. On the other hand, the upper limit of the blending ratio of the phenol resin (A) is preferably 100% by mass or less, more preferably 100% by mass or less, and particularly preferably 100% by mass or less based on the total curing agent. When the blending ratio is within the above range, good fluidity and hardenability can be maintained, and effects of improving flame resistance and solder resistance can be obtained.

The lower limit of the blending ratio of the entire curing agent is not particularly limited, and is preferably 0.8% by mass or more, and more preferably 1.5% by mass or more, based on the total semiconductor sealing resin composition. If the lower limit of the blending ratio is within the above range, sufficient fluidity can be obtained. In addition, the upper limit of the blending ratio of the entire curing agent is not particularly limited, and is preferably 10% by mass or less, and more preferably 8% by mass or less, based on the total semiconductor sealing resin composition. If the upper limit of the blending ratio is within the above range, good solder resistance can be obtained.

The epoxy resin used for the resin composition for semiconductor encapsulation of the present invention may, for example, be a crystalline epoxy resin such as a biphenyl type epoxy resin, a bisphenol type epoxy resin or a fluorene type epoxy resin; or a phenol novolac; a novolac type epoxy resin such as an epoxy resin or a cresol novolac type epoxy resin; a polyfunctional epoxy resin such as a trisphenol methane epoxy resin or an alkyl modified trisphenol methane epoxy resin; a phenyl aralkyl type epoxy resin having a phenyl skeleton, an aralkyl type epoxy resin having a phenyl aralkyl type epoxy resin having a phenyl group extending; a dihydroxy naphthalene type epoxy resin; A naphthol type epoxy resin such as an epoxy resin obtained by subjecting a 2-mer of naphthalene to epoxy group ether; triepoxypropyl tripolyisocyanate or monoallyl digoxypropyl trimer isocyanate Three Nuclear epoxy resin; bridged cyclic hydrocarbon compound modified phenol type epoxy resin such as dicyclopentadiene modified phenol type epoxy resin; however, it is not limited thereto. From the viewpoint of excellent balance between solder resistance, flame resistance and continuous formability, a phenol aralkyl type epoxy resin having a pendant phenyl skeleton and a phenol aralkyl type ring having a pendant biphenyl skeleton are preferred. An epoxy resin such as an aralkyl type epoxy resin such as an oxygen resin; and a crystalline epoxy resin is preferred from the viewpoint of excellent fluidity. Further, from the viewpoint of moisture resistance reliability of the obtained resin composition for sealing a semiconductor, it is preferred that the epoxy resin is preferably free of Na ions or Cl ions which are ionic impurities, and is composed of a semiconductor resin composition. From the viewpoint of the curability, the epoxy equivalent of the epoxy resin is preferably 100 g/eq or more and 500 g/eq or less.

The blending amount of the epoxy resin in the resin composition for semiconductor encapsulation is preferably 2% by mass or more, and more preferably 4% by mass or more based on the total mass of the resin composition for sealing a semiconductor. When the lower limit is within the above range, the obtained resin composition has good fluidity. In addition, the amount of the epoxy resin in the resin composition for semiconductor encapsulation is preferably 15% by mass or less, and more preferably 13% by mass or less based on the total mass of the resin composition for semiconductor encapsulation. When the upper limit is within the above range, the obtained resin composition has good solder resistance.

Further, the phenol resin and the epoxy resin preferably have an epoxy group number (EP) of the total epoxy resin and an equivalent ratio (EP)/(OH) of the phenolic hydroxyl group (OH) of the total phenol resin of 0.8 or more. 1.3 The following methods are used for deployment. When the equivalent ratio is within the above range, sufficient curing properties can be obtained when the obtained resin composition is molded.

The inorganic filler used in the resin composition for semiconductor encapsulation of the present invention is not particularly limited, and an inorganic filler generally used in the field can be used. For example, molten dioxide, spherical cerium oxide, crystalline cerium oxide, aluminum oxide, cerium nitride, aluminum nitride, or the like can be given.

The inorganic filler preferably has a particle diameter of from 0.01 μm to 150 μm from the viewpoint of the filling property of the mold cavity.

The content of the inorganic filler is not particularly limited, and is preferably 80% by mass or more, more preferably 83% by mass or more, and still more preferably 86% by mass or more based on the total mass of the semiconductor sealing resin composition. When the lower limit is within the above range, the moisture absorption of the cured product of the obtained semiconductor sealing resin composition or the decrease in strength can be suppressed, and thus a cured product having good weld crack resistance can be obtained. In addition, the upper limit of the inorganic filler amount in the resin composition for semiconductor encapsulation is preferably 93% by mass or less, more preferably 91% by mass or less, and still more preferably 90% by mass based on the total mass of the resin composition for semiconductor encapsulation. Below mass%. When the upper limit is within the above range, the obtained resin composition has good fluidity and good formability.

Further, in the case of using a metal hydroxide such as aluminum hydroxide or magnesium hydroxide described later, or an inorganic flame retardant such as zinc borate, zinc molybdate or antimony trioxide, it is preferable to use these inorganic flame retardants. The total amount of the agent and the above inorganic filler is set within the above range.

The resin composition for semiconductor encapsulation of the present invention may further be selected from the group consisting of a tetrasubstituted anthracene compound and a phosphorus beet. A compound (D) of at least one of a compound, an adduct of a phosphine compound and a hydrazine compound, and an adduct of a hydrazine compound and a decane compound. In addition to the action of promoting the crosslinking reaction between the epoxy resin and the curing agent, the compound (D) can also suppress the balance between the fluidity and the hardenability at the time of curing the resin composition for sealing a semiconductor resin, and further the hardening property of the cured product. . Specific examples of the compound (D) include an organophosphine, a tetrasubstituted anthracene compound, and a phosphorus beet. a phosphorus atom-containing hardening accelerator such as a compound, an addition product of a phosphine compound and a ruthenium compound, an adduct of a ruthenium compound and a decane compound, or a 1,8-diazabicyclo(5,4,0)dodecene- 7. A compound such as benzyldimethylamine or 2-methylimidazole; among these, a phosphorus atom-containing hardening accelerator can obtain better curability. From the standpoint of the balance between fluidity and hardenability, it is more preferably a tetrasubstituted anthracene compound or a phosphorus beet. A phosphorus atom-containing hardening accelerator having a latent property such as a compound, an addition product of a phosphine compound and a ruthenium compound, or an adduct of a ruthenium compound and a decane compound. In the case of paying attention to the liquidity viewpoint, it is particularly preferable to be a tetra-substituted ruthenium compound; when it is important to pay attention to the low modulus of elasticity of the heat of the cured resin composition for semiconductor sealing, it is particularly preferable to be a phosphorus beet. An addition product of a compound, a phosphine compound and a ruthenium compound; and an additive of a ruthenium compound and a decane compound is particularly preferable from the viewpoint of attaching importance to latent hardenability.

The organophosphine which can be used in the resin composition for sealing a semiconductor of the present invention may, for example, be a phosphine such as ethylphosphine or phenylphosphine; a phosphine such as dimethylphosphine or diphenylphosphine; A tertiary phosphine such as methyl phosphine, triethylphosphine, tributylphosphine or triphenylphosphine.

The tetrasubstituted fluorene compound which can be used in the resin composition for semiconductor encapsulation of the present invention may, for example, be a compound represented by the following general formula (7).

[Chemistry 9]

(In the above general formula (7), P represents a phosphorus atom. R5, R6, R7 and R8 represent an aromatic group or an alkyl group. A represents at least one member selected from the group consisting of a hydroxyl group, a carboxyl group and a thiol group on the aromatic ring. An anion of an aromatic organic acid of any of the functional groups. AH represents an aromatic organic acid having at least one functional group selected from a hydroxyl group, a carboxyl group, or a thiol group on the aromatic ring. x, y are 1 to 3 The integer, z is an integer from 0 to 3, and x = y.)

The compound represented by the general formula (7) can be obtained, for example, as follows, but is not limited thereto. First, tetra-substituted ruthenium chloride and an aromatic organic acid and a base are mixed in an organic solvent and uniformly mixed to cause an aromatic organic acid anion to occur in the solution system. Next, when water is added, the compound represented by the general formula (7) can be precipitated. In the compound of the general formula (7), R6, R6, R7 and R8 bonded to the phosphorus atom are a phenyl group, and AH is a compound having a hydroxyl group on the aromatic ring, that is, a phenol, and A is It is preferably an anion of the phenol.

Phosphate beet which can be used as the resin composition for semiconductor encapsulation of the present invention The compound may, for example, be a compound represented by the following general formula (8).

[化10]

(In the above general formula (8), X1 represents an alkyl group having 1 to 3 carbon atoms; Y1 represents a hydroxyl group; f is an integer of 0 to 5, and g is an integer of 0 to 4.)

The compound represented by the general formula (8) can be obtained, for example, as follows. First, a tris-phosphorus triaromatic-substituted phosphine is brought into contact with a diazonium salt, and is obtained by a step of substituting a triaromatic-substituted phosphine with a diazonium group possessed by a diazonium salt. However, it is not limited to this.

The addition product of the phosphine compound and the hydrazine compound which can be used in the resin composition for semiconductor encapsulation of the present invention may, for example, be a compound represented by the following general formula (9).

[11]

(In the above general formula (9), P represents a phosphorus atom. R9, R10 and R11 are an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, which may be the same or different from each other. R12, R13 and R14 are a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, and may be the same or different from each other; and R12 and R13 may be bonded to each other to form a cyclic structure.

The phosphine compound used in the adduct of the phosphine compound and the ruthenium compound is preferably triphenylphosphine, phenyl(alkylphenyl)phosphine, arsenylphenylphosphine, trinaphthylphosphine or When the aromatic ring is unsubstituted or has a substituent such as an alkyl group or an alkoxy group, the substituent such as an alkyl group or an alkoxy group may, for example, be a carbon number of 1 to 6 carbon atoms. From the viewpoint of easiness of availability, triphenylphosphine is preferred.

In addition, examples of the ruthenium compound used in the adduct of the phosphine compound and the ruthenium compound include o-benzoquinone, p-benzoquinone, and anthracene. Among them, from the viewpoint of storage stability, it is preferably Benzoquinone.

The method for producing an adduct of a phosphine compound and a ruthenium compound, for example, a method of obtaining an adduct by contacting and mixing the organic tri-phosphine and a benzoquinone in a solvent . The solvent may be one which has a lower solubility in an adduct than a ketone such as acetone or methyl ethyl ketone. However, it is not limited to this.

The compound of the formula (9) is a compound in which R9, R10 and R11 which are bonded to a phosphorus atom are a phenyl group, and R12, R13 and R14 are a hydrogen atom, that is, 1,4-benzoquinone is The triphenylphosphine addition compound is preferred because the elastic modulus of the cured product of the semiconductor sealing resin composition can be kept low.

The adduct of the oxime compound and the decane compound which can be used as the resin composition for semiconductor encapsulation of the present invention may, for example, be a compound represented by the following general formula (10).

[化12]

(In the above general formula (10), P represents a phosphorus atom; Si represents a halogen atom. R15, R16, R17 and R18 are each an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring, and may be the same or each other. In the formula, X2 is an organic group bonded to the groups Y2 and Y3, wherein X3 is an organic group bonded to the groups Y4 and Y5, and Y2 and Y3 represent a group in which a proton-donating substituent is released from a proton. The groups Y2 and Y3 in the same molecule form a chimeric structure with a ruthenium atom. Y4 and Y5 represent a group in which a proton-donating substituent releases a proton, and a group Y4 and Y5 in the same molecule are bonded to a ruthenium atom. The chimeric structure. X2 and X3 may be the same or different from each other, and Y2, Y3, Y4 and Y5 may be the same or different from each other. Z1 is an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring.

In the general formula (10), examples of R15, R16, R17 and R18 include a phenyl group, a methylphenyl group, a methoxyphenyl group, a hydroxyphenyl group, a naphthyl group, a hydroxynaphthyl group, a benzyl group, a methyl group and a group B. Base, n-butyl, n-octyl and cyclohexyl. Among these, an aromatic group having a substituent such as a phenyl group, a methylphenyl group, a methoxyphenyl group, a hydroxyphenyl group or a hydroxynaphthyl group, or an unsubstituted aromatic group is preferable.

Further, in the general formula (10), X2 is an organic group bonded to the groups Y2 and Y3. Similarly, X3 is an organic group bonded to the groups Y4 and Y5. Y2 and Y3 are groups in which a proton-donating substituent releases a proton, and a group Y2 and Y3 in the same molecule are bonded to a ruthenium atom to form a fitting structure. Similarly, Y4 and Y5 are groups in which a proton-donating substituent releases a proton, and a group Y4 and Y5 in the same molecule are bonded to a ruthenium atom to form a fitting structure. The radicals X2 and X3 may be the same or different from each other, and the radicals Y2, Y3, Y4 and Y5 may be the same or different from each other. The group represented by -Y2-X2-Y3- and -Y4-X3-Y5 in the general formula (10) is composed of a base in which two protons are released from the proton donor, and is used as a proton donor. For example, catechol, gallic phenol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2'-biphenyl, 1,1'-bi-2-naphthol, willow Acid, 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chlorodecanoic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol and Glycerin, etc. Among these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.

Further, Z1 in the general formula (10) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring. Specific examples of such an aliphatic hydrocarbon group such as a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, and an octyl group; and an aromatic hydrocarbon group such as a phenyl group, a benzyl group, a naphthyl group, and a biphenyl group; a reactive substituent such as a glycidoxypropyl group, a mercaptopropyl group, an aminopropyl group or a vinyl group; etc.; among these, from the viewpoint of improving the thermal stability of the general formula (10), More preferred are methyl, ethyl, phenyl, naphthyl and biphenyl.

The method for producing an adduct of a ruthenium compound and a decane compound can be obtained by adding a decane compound such as phenyltrimethoxydecane or 2,3-dihydroxynaphthalene or the like to a flask in which methanol is placed. The proton donor was dissolved and dissolved, and then the sodium methoxide-methanol solution was dropped under stirring at room temperature. Further, a solution prepared by dissolving tetrakis-substituted hafnium halide such as tetraphenylphosphonium bromide in methanol in advance and dropping it at room temperature to precipitate crystals is prepared. The precipitated crystals were filtered, washed with water, and dried under vacuum to obtain an adduct of a hydrazine compound and a decane compound. However, it is not limited to this.

The compounding ratio of the compound (D) which can be used in the resin composition for semiconductor encapsulation of the present invention is preferably 0.1% by mass or more and 1% by mass or less based on the total resin composition. When the compounding amount of the compound (D) is within the above range, sufficient curability and fluidity can be obtained.

In the resin composition for semiconductor encapsulation of the present invention, a compound (E) in which a hydroxyl group is bonded to two or more adjacent carbon atoms constituting an aromatic ring (hereinafter sometimes referred to simply as "compound (E)") may be further used. ). By using the compound (E), the resin formulation can be suppressed even when the phosphorus atom-containing hardening accelerator having no latent property is used as the compound (D) which promotes the crosslinking reaction between the phenol resin (A) and the epoxy resin. The resin composition for semiconductor sealing can be stably obtained by the reaction in melt-kneading.

Further, the compound (E) also has an effect of lowering the melt viscosity of the semiconductor sealing resin composition and improving fluidity. As the compound (E), a monocyclic compound represented by the following general formula (11) or a polycyclic compound represented by the following general formula (12) can be used, and these compounds may have a substitution other than a hydroxyl group. base.

[Chemistry 13]

(In the above general formula (11), any one of R19 and R23 is a hydroxyl group, and when one is a hydroxyl group, the other is a substituent other than a hydrogen atom, a hydroxyl group or a hydroxyl group. R20, R21 and R22 are hydrogen. a substituent other than an atom, a hydroxyl group or a hydroxyl group.)

[Chemistry 14]

(In the above general formula (12), any one of R24 and R30 is a hydroxyl group, and when one is a hydroxyl group, the other is a substituent other than a hydrogen atom, a hydroxyl group or a hydroxyl group. R25, R26, R27, R28 And R29 is a substituent other than a hydrogen atom, a hydroxyl group or a hydroxyl group.)

Specific examples of the monocyclic compound represented by the general formula (11) include catechol, gallic phenol, gallic acid, gallic acid ester or derivatives thereof. Further, specific examples of the polycyclic compound represented by the general formula (12) include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and the like. Among these, it is preferable that the fluidity and the controllability of the curability are a compound in which a hydroxyl group is bonded to two adjacent carbon atoms constituting the aromatic ring. Further, in consideration of the volatilization at the time of the kneading step, it is more preferable that the mother nucleus is a compound having a naphthalene ring which is low in volatility and high in stability. In this case, the compound (E) can be specifically a compound having a naphthalene ring such as 1,2-dihydroxynaphthalene or 2,3-dihydroxynaphthalene or a derivative thereof. These compounds (E) may be used alone or in combination of two or more.

The amount of the compound (E) is preferably 0.01% by mass or more and 1% by mass or less, more preferably 0.03% by mass or more and 0.8% by mass or less, particularly preferably 0.05% by mass or more and 0.5% by mass or less based on the total resin composition. . When the lower limit of the compounding amount of the compound (E) is within the above range, a sufficiently low viscosity and a fluidity improving effect of the resin composition for semiconductor encapsulation can be obtained. In addition, when the upper limit of the compounding amount of the compound (E) is within the above range, there is little concern that the curability of the semiconductor encapsulating resin composition or the continuous moldability may be lowered or the solder reflow temperature may be cracked.

Further, a part of the compound (E) may correspond to the phenol resin (A) represented by the above general formula (1).

In this case, the compound (E) corresponding to the phenol resin (A) in the compound (E) is included in the phenol resin (A), and is regarded as the blending amount of the phenol resin (A).

In the resin composition for semiconductor encapsulation of the present invention, in order to improve the adhesion between the epoxy resin (B) and the inorganic filler (C), a tackifier such as a decane coupling agent may be added.

The example is not particularly limited, and examples thereof include an epoxy decane, an amino decane, a urea decane, and a mercapto decane. When the epoxy resin and the inorganic filler are reacted, the epoxy resin and the inorganic filler are lifted. The interface strength can be. Further, by using the decane coupling agent in combination with the above compound (E), the effect of lowering the melt viscosity of the resin composition of the compound (E) and improving the fluidity can be enhanced.

As the epoxy decane, for example, γ-glycidoxypropyltriethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldi Methoxydecane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like.

Further, examples of the aminodecane include γ-aminopropyltriethoxydecane, γ-aminopropyltrimethoxydecane, and N-β(aminoethyl)γ-aminopropyltrimethyl. Oxydecane, N-β(aminoethyl)γ-aminopropylmethyldimethoxydecane, N-phenylγ-aminopropyltriethoxydecane, N-phenylγ-amine Propyltrimethoxydecane, N-β(aminoethyl)γ-aminopropyltriethoxydecane, N-6-(aminohexyl)3-aminopropyltrimethoxydecane, N -(3-(trimethoxydecylpropyl)-1,3-benzenedimethane, etc. Further, as the urea decane, for example, γ-ureidopropyl triethoxy decane, hexamethyldifluorene, etc. .

Further, examples of the decyl decane include γ-mercaptopropyltrimethoxydecane. These decane coupling agents may be used alone or in combination of two or more.

The lower limit of the blending ratio of the coupling agent which can be used in the resin composition for semiconductor encapsulation of the present invention is preferably 0.01% by mass or more, and more preferably 0.05% by mass or more based on the total semiconductor sealing resin composition. It is particularly preferably 0.1% by mass or more. When the lower limit of the blending ratio of the coupling agent is within the above range, the interface strength between the epoxy resin and the inorganic filler is not lowered, and good weld crack resistance of the semiconductor device can be obtained. In addition, the upper limit of the blending ratio of the coupling agent is preferably 1% by mass or less, more preferably 0.8% by mass or less, and particularly preferably 0.6% by mass or less in the total semiconductor sealing resin composition. When the upper limit of the blending ratio of the coupling agent is within the above range, the interface strength between the epoxy resin and the inorganic filler is not lowered, and good weld crack resistance of the semiconductor device can be obtained. Further, when the blending ratio of the coupling agent is within the above range, the water absorbability of the cured product of the resin composition is not increased, and good weld crack resistance of the semiconductor device can be obtained.

In addition to the above components, the resin composition for semiconductor encapsulation of the present invention may be suitably formulated with a coloring agent such as carbon black, iron oxide or titanium oxide; a natural wax such as palm wax or a synthetic wax such as polyethylene wax, and a hard fat. a higher fatty acid such as an acid or zinc stearate or a metal salt thereof, or a release agent such as paraffin; a low stress additive such as a polyoxygenated oil or a polyoxyxylene rubber; an inorganic ion exchanger such as cerium oxide hydrate; An additive such as a metal hydroxide such as alumina or magnesium hydroxide, or a flame retardant such as zinc borate, zinc molybdate, phosphazene or antimony trioxide.

The resin composition for semiconductor encapsulation of the present invention is obtained by uniformly mixing a phenol resin (A), an epoxy resin (B), an inorganic filler (C), and other components described above, for example, using a mixer at room temperature. .

Thereafter, if necessary, it is melt-kneaded by using a kneading machine such as a heating roll, a kneader or an extruder, and then cooled and pulverized as necessary, whereby the desired degree of dispersion, fluidity, and the like can be adjusted.

Next, a description will be given of a semiconductor device of the present invention.

In the method of manufacturing a semiconductor device using the resin composition for semiconductor encapsulation of the present invention, for example, a lead frame or a circuit board on which a semiconductor element is mounted is placed in a mold cavity, and a resin composition for semiconductor encapsulation is transferred to a mold. A method of forming a semiconductor device by molding, curing, or the like by molding, compression molding, or injection molding.

Examples of the semiconductor element to be sealed include an integrated circuit, a large-scale integrated circuit, an electrode body, a thyristor, a diode, a solid-state imaging device, and the like, but are not limited thereto.

The form of the obtained semiconductor device is not particularly limited, and examples thereof include a double row package (DIP), a plastic lead die load package (PLCC), a four-sided flat package (QFP), and a micro quad plane package (LQFP). Small outline package (SOP), small outline J lead package (SOJ), thin small outline package (TSOP), thin quad flat package (TQFP), tape and reel package (TCP), gate ball array (BGA), Wafer size package (CSP) or the like, but is not limited thereto.

The semiconductor device in which the semiconductor element is sealed by a molding method such as transfer molding of a resin composition for sealing a semiconductor, or the resin is directly or at a temperature of about 80 ° C to 200 ° C for about 10 minutes to 10 hours. After the composition is completely cured, it is mounted on an electronic device or the like.

FIG. 1 is a view showing an example of a cross-sectional structure of a semiconductor device using the resin composition for semiconductor encapsulation of the present invention. On the die pad 3, the semiconductor element 1 is fixed through the die hardened body 2. The electrode pad of the semiconductor element 1 and the lead frame 5 are connected by a metal wire 4. The semiconductor element 1 is sealed by the hardened body 6 of the resin composition for sealing.

FIG. 2 is a view showing an example of a cross-sectional structure of a single-sided sealed semiconductor device using the resin composition for semiconductor encapsulation of the present invention. On the surface of the substrate 8, the semiconductor element 1 is fixed via the die-hardened body 2 via the solder resist 7 on which the laminate of the solder resist 7 layer is formed.

Further, in order to obtain conduction between the semiconductor element 1 and the substrate 8, the solder resist 7 on the electrode is removed by a development method to expose the electrode pad. Therefore, the semiconductor device of FIG. 2 is designed such that the electrode pads of the semiconductor device 1 and the electrode pads on the substrate 8 are connected by the metal wires 4.

The semiconductor device is sealed by the sealing resin composition to form the hardened body 6, and a semiconductor device in which only the one surface side of the substrate 8 on which the semiconductor element 1 is mounted is sealed can be obtained. The electrode pads on the substrate 8 are bonded to the solder balls 9 on the non-sealing side of the substrate 8.

(Example)

Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the description of the examples. The blending amount of each component described below is a part by mass unless otherwise specified.

The phenol resin (A) used the following phenol resins 1 to 3.

Phenol Resin 1: Weighed 1,6-naphthenediol (manufactured by Tokyo Chemical Industry Co., Ltd., melting point 136 ° C, molecular weight 160.2, purity 99.5%) in a separation flask, 100 parts by mass, 4,4'-dichloromethyl Biphenyl (manufactured by Wako Pure Chemical Industries, Ltd., purity: 97.5%, molecular weight: 251), 31.5 parts by mass, and 0.6 parts by mass of pure water were heated under nitrogen substitution, and stirring was started at the start of melting. The temperature in the system was maintained in the range of 150 ° C to 160 ° C and reacted for 2 hours. During the above reaction, hydrochloric acid generated in the system due to the reaction is discharged to the outside of the system by a nitrogen stream. After completion of the reaction, the residual hydrochloric acid and water were distilled off under reduced pressure of 150 ° C and 2 mmHg to obtain a phenol resin 1 represented by the following formula (13) (hydroxyl group 102, softening point 75 ° C, ICI viscosity at 150 ° C). 1.15dPa‧s, the ratio of n=0 calculated by the GPC area method is 51%, n=0~2 contains 95%, n average is 0.72). The GPC chart is shown in Fig. 3 and the FD-MS chart is shown in Fig. 4.

Phenol Resin 2: In the synthesis of the phenol resin 1, the 1,6-naphthalenediol is set to 115 parts by mass and the same operation as in the phenol resin 1 is carried out to obtain a phenol resin 2 (hydroxyl equivalent) represented by the following formula (13). 98, the softening point is 84 ° C, the ICI viscosity at 150 ° C is 0.9 dPa ‧ s, the n = 0 content ratio calculated by the GPC area method is 55%, the ratio of n = 0 to 2 is 95%, and the average value of n is 0.65). The GPC chart is shown in Fig. 5.

Phenolic Resin 3: 100 parts by mass of 1,6-naphthyl diol (manufactured by Tokyo Chemical Industry Co., Ltd., melting point 136 ° C, molecular weight 160.2, purity 99.5%), 4,4'-dichloromethyl Biphenyl (manufactured by Wako Pure Chemical Industries, Ltd., bischloromethylbiphenyl, purity 96%, molecular weight 251) 35.4 parts by mass, pure water 0.6 parts by mass, heated under nitrogen substitution, and started at the beginning of melting Stir. After the temperature in the system was maintained in the range of 150 ° C to 160 ° C and reacted for 15 minutes, benzyl chloride was added to the reaction system (Kuandong Chemical Co., Ltd. special grade reagent, boiling point 179 ° C, molecular weight 126.6, purity 99.5%) 40 parts by mass and 0.6 parts by mass of pure water were further reacted for 2 hours. During the above reaction, hydrochloric acid generated in the system due to the reaction is discharged to the outside of the system by a nitrogen stream. After completion of the reaction, the residual hydrochloric acid and water are distilled off under reduced pressure of 150 ° C and 2 mmHg to obtain a phenol resin 3 having a structure represented by the following formula (14) and a sum of h1 to h4 of at most 3 (hydroxy equivalent of 129, The softening point is 67 ° C, the ICI viscosity at 150 ° C is 1.8 dPa ‧ , the ratio of n = 0 calculated by the GPC area method is 52%, the ratio of n = 0 to 2 is 93%, and the average value of n is 0.70. The content ratio of the component having a benzyl group is 50 area% in the GPC area method. The GPC chart is shown in Fig. 6, and the FD-MS chart is shown in Fig. 7.

[化15]

[Chemistry 16]

As the phenol resin other than the phenol resin (A), phenol resins 4 to 7 were used.

Phenolic Resin 4: a naphthalenediol aralkyl resin having a naphthalene skeleton represented by the following formula (15) (manufactured by Nippon Steel Chemical Co., Ltd., SN-375. Hydroxyl equivalent of 99, softening point of 70 ° C, 150 ° C ICI viscosity is 0.7dPa‧s.)

Phenol Resin 5: a phenol aralkyl resin having a biphenyl skeleton (Menghe Chemical Co., Ltd., MEH-7851SS. Hydroxyl equivalent 203, softening point 67 ° C, ICI viscosity at 150 ° C 0.7 dPa ‧ s.)

Phenolic Resin 6: Triphenylmethane type phenol resin (manufactured by Minghe Chemical Co., Ltd., MEH-7500. Hydroxyl equivalent of 97, softening point of 110 ° C, ICI viscosity at 150 ° C 5.8 dPa ‧ s.)

Phenol Resin 7: Phenolic novolac resin (manufactured by Sumitomo BAKELITE Co., Ltd., PR-HF-3. Hydroxyl equivalent 104, softening point 80 ° C, ICI viscosity at 150 ° C 5.8 dPa ‧ s.)

[化17]

The GPC measurement of the phenol resin 1 was carried out under the following conditions. To 20 mg of the sample of the phenol resin 1, 6 ml of a solvent tetrahydrofuran (THF) was added thereto to be sufficiently dissolved and subjected to GPC measurement. For the GPC system, TSK GUARDCOLUMN HHR-L (diameter 6.0 mm, tube length 40 mm, protective column) and Tosoh (stock) TSK-GEL GMHHR-L (diameter 7.8 mm, tube length 30 mm) were used. Two styrene gel columns), a differential index (RI) detector W2414 manufactured by WATERS, inline. The flow rate of the pump was 0.5 ml/min, and the temperature in the column and the differential refractometer was set to 40 ° C, and the measurement solution was injected into a syringe by a syringe to measure 100 μl.

The FD-MS measurement of the phenol resin 1 was carried out under the following conditions. To 10 mg of the sample of the phenol resin 1, 1 g of the solvent dimethyl hydrazine was added and sufficiently dissolved, and after being applied onto the FD emitter, it was subjected to measurement. The FD-MS system uses the MS-FD15A from Japan Electron Co., Ltd. and the MS-700 (Model Name: Double Convergence Type Mass Analysis Device) manufactured by Nippon Electronics Co., Ltd. of the ionization unit. The mass range (m/z) was measured from 50 to 2000.

The following epoxy resins 1 to 9 were used for the epoxy resin.

Epoxy resin 1: phenol aralkyl type epoxy resin having a phenyl group extending (manufactured by Nippon Kayaku Co., Ltd., NC3000. Epoxy equivalent 276, softening point 58 ° C, ICI viscosity at 150 ° C 1.11 dPa‧ s)

Epoxy Resin 2: Phenol aralkyl type epoxy resin with phenyl structure (Nippon Chemical Co., Ltd., NC2000. Epoxy equivalent 238, softening point 52 ° C, ICI viscosity at 150 ° C 1.2 dPa‧s )

Epoxy Resin 3: Modified o-cresol novolac type epoxy resin (made by DIC), HP-5000. Epoxy equivalent 251, softening point 58 ° C, ICI viscosity at 150 ° C 0.85 dPa‧s)

Epoxy Resin 4: Dicyclopentadiene type epoxy resin (manufactured by DIC, HP-7200L, epoxy equivalent 244, softening point 56 ° C, ICI viscosity at 150 ° C 0.24 dPa‧s)

Epoxy resin 5: o-cresol novolac type epoxy resin (made by DIC), N660. Epoxy equivalent 210, softening point 62 ° C, ICI viscosity at 150 ° C 2.34 dPa‧s)

Epoxy resin 6: bisphenol F type epoxy resin (made by Dongdu Chemical Co., Ltd., YSLV-80XY. Epoxy equivalent 190, melting point 80 ° C, ICI viscosity at 150 ° C 0.03 dPa‧s)

Epoxy resin 7: bisphenol A epoxy resin (made by Japan Epoxy Resin Co., Ltd., YL6810. Epoxy equivalent 172, melting point 45 ° C, ICI viscosity at 150 ° C 0.03 dPa‧s)

Epoxy resin 8: biphenyl type epoxy resin (made by Japan Epoxy Resin Co., Ltd., YX4000K. Epoxy equivalent 185, melting point 107 ° C, ICI viscosity at 150 ° C 0.1 dPa ‧ s)

Epoxy resin 9: triphenylmethane type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., 1032H-60. Epoxy equivalent 171, softening point 60 ° C, ICI viscosity at 150 ° C 1.3 dPa ‧ s)

As the inorganic filler, 100 parts by mass of molten spherical cerium oxide FB560 (average particle diameter: 30 μm) manufactured by Electrochemical Industry Co., Ltd., and spherical cerium oxide SO-C2 (average particle diameter: 0.5 μm) manufactured by Admatech Co., Ltd. were used. 6.5 parts by mass of a blend of spherical cerium oxide SO-C5 (average particle diameter: 30 μm) prepared by Admatech Co., Ltd., 7.5 parts by mass.

The following four kinds of the compound (D) were used.

Compound (D1): Compound (D) represented by the following formula (16)

[化18]

Compound (D2): Compound (D) represented by the following formula (17)

[Chemistry 19]

Compound (D3): Compound (D) represented by the following formula (18)

[Chemistry 20]

Compound (D4): Compound (D) represented by the following formula (19)

[Chem. 21]

Triphenylphosphine was used as the other phosphorus compound.

For the compound E, a compound represented by the following formula (20) (manufactured by Tokyo Chemical Industry Co., Ltd., 2,3-naphthalenediol, purity: 98%) was used.

[化22]

The decane coupling agent used the following decane coupling agents 1 to 3.

Decane coupling agent 1: γ-mercaptopropyltrimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-803)

Decane coupling agent 2: γ-glycidoxypropyltrimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403)

Decane coupling agent 3: N-phenyl-3-aminopropyltrimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)

The metal hydroxides used the following metal hydroxides 1 and 2.

Metal hydroxide-1: magnesium hydroxide ‧ zinc hydroxide solid solution composite metal hydroxide (TATEHO Chemical Industry Co., Ltd., ECOMAG Z-10)

Metal hydroxide-2: aluminum hydroxide (Sumitomo Chemical Co., Ltd., CL310)

Phosphazene compound: cyclophosphazene (manufactured by Otsuka Chemical Co., Ltd., SPE-100).

The coloring agent used was carbon black (MA600) manufactured by Mitsubishi Chemical Corporation.

The release agent was made by Nikko Carnauba (melting point 83 ° C) manufactured by Nisshin FINE Co., Ltd.

(Example 1)

The following components were mixed at a normal temperature in a mixer, melt-kneaded by a heating roll at 80 ° C to 100 ° C, and pulverized after cooling to obtain a resin composition for semiconductor sealing.

Phenolic resin 1. 3.25 parts by mass

Epoxy resin 1 9.25 parts by mass

Inorganic filler 86.50 parts by mass

Hardening accelerator 1 (D1) 0.40 parts by mass

Decane coupling agent 1 0.10 parts by mass

Decane coupling agent 2 0.05 parts by mass

Decane coupling agent 3 0.05 parts by mass

Colorant 0.30 parts by mass

Release agent 0.10 parts by mass

The obtained semiconductor sealing resin composition was evaluated for the following items. The evaluation results are shown in Table 1.

Spiral flow: using a low-pressure transfer molding machine (KTS-15 manufactured by KOHTAKI Seiki Co., Ltd.), in a metal mold for spiral flow measurement according to EMMI-1-66, at 175 ° C, injection pressure 6.9 MPa, dwell time The resin composition for semiconductor encapsulation was injected under the conditions of 120 seconds, and the flow length was measured. The parameters of the fluidity of the spiral flow system, the larger the value is the good fluidity. The unit is cm.

Flame resistance: a resin composition was injected using a low pressure transfer molding machine (KTS-30 manufactured by KOHTAKI Seiki Co., Ltd.) under the conditions of a metal mold temperature of 175 ° C, an injection time of 15 seconds, a curing time of 120 seconds, and an injection pressure of 9.8 MPa. A 3.2 mm thick flame resistant test piece was produced and heat treated at 175 ° C for 4 hours. For the obtained test piece, the flame resistance test was carried out in accordance with the specifications of the UL94 vertical method. In the table, Fmax, ΣF, and the flame resistance rating after the judgment are indicated. The resin composition for semiconductor encapsulation obtained above showed good flame resistance of Fmax: 7 seconds, ΣF: 24 seconds, and flame resistance rating: V-0.

Continuous moldability: The above obtained resin composition for encapsulating a semiconductor to a rotary tabletting machine to fill weight 7.5g, size of Φ 16mm tabletting mold to a pressure 600Pa a tablet was tableted to obtain an ingot. The ingot is filled into the ingot supply crucible and mounted inside the forming apparatus. Using a low-pressure transfer automatic forming machine (SCINEX, SY-COMP), the ingot of the resin composition for semiconductor sealing is used for the ingot, etc., under the conditions of a metal mold temperature of 175 ° C, an injection pressure of 9.8 MPa, and a curing time of 60 seconds. Sealed to obtain a 208-pin QFP (Cu lead frame, package outer dimensions: 28 mm × 28 mm × 3.2 mm thick, pad size: 15.5 mm × 15.5 mm, wafer size 15.0 mm × 15.0 mm × 0.35 mm thick) semiconductor device Forming, this forming was continued until 300 shots. At this time, the molding state (with or without filling) of the semiconductor device was confirmed every 25 shots, and the number of shots that were initially confirmed to be unfilled was described in the table. The resin composition for semiconductor encapsulation obtained above showed good continuous moldability of 300 or more shots.

Resistance to sticking: The above-mentioned ingots were placed in a crucible in a state of being vertically overlapped, and were allowed to stand in a thermostatic chamber at 25 ° C and 30 ° C, and the solid state of the ingot was confirmed after 8 hours. In the ingot contact surface of the above 14 points, the number of points is: a contact surface which is solid-adhesive and cannot be separated by hand, a contact surface which is self-adhesive but easily separable, 0.5, and an unadhesive contact surface 0; The total points are listed in the item of the adhesion resistance in Table 4. In the general continuous forming step, the ingot is vertically overlapped to a maximum height of 20 to 40 cm in the crucible in the automatic conveying unit of the forming apparatus, and is at a surface temperature of about 20 to 30 ° C before being formed. The maximum standby time is about 8~12 hours. The supply and delivery of the ingot in the molding apparatus is performed by raising the protruding pin from the lowermost portion of the crucible, and the uppermost ingot is extruded from the upper portion of the crucible, lifted by the mechanical arm, and conveyed to the transfer molding can. At this time, if the ingot in standby in the crucible is fixed up and down, the conveyance failure occurs and the productivity is deteriorated.

Boiling water absorption rate: Using a low-pressure transfer molding machine (KTS-30 manufactured by KOHTAKI Seiki Co., Ltd.), a disk-shaped test piece having a diameter of 50 mm and a thickness of 3 mm was formed at 175 ° C, an injection pressure of 9.8 MPa, and a hardening time of 120 seconds. Heat treatment was carried out at 175 ° C for 4 hours. The weight change of the test piece before the moisture absorption treatment and the boiling treatment in the pure water for 24 hours was measured, and the water absorption rate of the test piece was expressed by percentage. Unit is%. The resin composition for semiconductor encapsulation obtained above showed a low water absorption of 0.27% or less (Reference Example 1).

Solderability test 1: Injecting a semiconductor sealing resin using a low-pressure transfer molding machine (manufactured by Seiko Co., Ltd., GP-ELF) at a mold temperature of 180 ° C, an injection pressure of 7.4 MPa, and a hardening time of 120 seconds. The composition was subjected to sealing molding using a lead frame or the like on which a semiconductor element (tantalum wafer) was mounted, and an 80 pQFP (Quad Flat Package, Cu lead frame having a size of 14 × 20 mm × thickness 2.0 mm and a semiconductor element of 7 × 7 mm × thickness 0.35) was produced. A semiconductor device in which the semiconductor element and the inner lead portion of the lead frame are soldered with a metal wire having a diameter of 25 μm. Six semiconductor devices which were heat-treated at 175 ° C for 4 hours were treated at 60 ° C and a relative humidity of 60% for 120 hours, and then subjected to IR reflow treatment (260 ° C according to JEDEC‧Level 2 conditions). The presence or absence of peeling and cracking in these semiconductor devices was observed by a ultrasonic flaw detector (manufactured by Hitachi, Ltd., Mi-scope 10), and any of peeling or cracking was regarded as defective. When the number of defective semiconductor devices is n, it is represented by n/6. The resin composition for semiconductor encapsulation obtained above showed good reliability of 0/6.

Solderability test 2: Except for the six semiconductor devices which were heat-treated at 175 ° C for 4 hours in the above-mentioned solder resistance test 1 and were treated at 85 ° C and 60% relative humidity for 168 hours, the remaining solder resistance test was carried out. 1 same test. The semiconductor device produced by the resin composition for semiconductor encapsulation obtained above showed good reliability of 0/6.

High-temperature storage characteristic test: A resin composition for semiconductor sealing is injected using a low-pressure transfer molding machine (manufactured by Seiko Co., Ltd., GP-ELF) at a mold temperature of 180 ° C and an injection pressure of 6.9 ± 0.17 MPa for 90 seconds. A lead frame or the like in which a semiconductor element (a germanium wafer) is mounted is subjected to sealing molding to produce a 16-pin type DIP (Dual Inline Package) having a size of 7 mm × 11.5 mm × a thickness of 1.8 mm and a semiconductor device of 5 ×. 9mm × thickness 0.35mm, the semiconductor device is formed on the surface of an oxide layer having a thickness of 5 μm, and then an aluminum wiring pattern having a line/space of 10 μm is formed thereon, and the aluminum wiring pad and the lead frame pad portion on the device are 25 μm in diameter. A semiconductor device in which a metal wire is soldered. The initial resistance value was measured for 10 semiconductor devices which were post-cured at 175 ° C for 4 hours, and subjected to a high temperature storage treatment at 185 ° C for 1,000 hours. After the high-temperature treatment, the resistance value of the semiconductor device was measured, and the semiconductor device which became 130% of the initial resistance value was regarded as defective. When the number of defective semiconductor devices was n, it was represented by n/10. The resin composition for semiconductor encapsulation obtained above showed good reliability of 0/10.

(Examples 2 to 11 and Comparative Examples 1 to 4)

The resin composition for semiconductor encapsulation was produced in the same manner as in Example 1 according to the formulation of Tables 1 to 3, and evaluated as in Example 1. The evaluation results are shown in Tables 1 to 3.

Examples 1 to 11 are resin compositions containing a phenol resin (A), an epoxy resin (B) and an inorganic filler (C) having a structural unit represented by the general formula (1) and the general formula (2); If the ratio of the structural unit of the phenol resin (A) is changed, the type of the epoxy resin (B) is changed, the type of the compound (D) is changed, the compound (E) is contained, or the flame retardant is changed, Each of them was excellent in balance between fluidity (spiral flow), flame resistance, continuous formability, solder resistance, and high-temperature storage characteristics.

On the other hand, Comparative Example 1 in which a naphthalenediol aralkyl resin having a pendant phenyl skeleton was used for the hardener was considered to be easily absorbed due to a high hydroxyl group density, and as a result, the solder resistance was insufficient, and further, The compatibility with the phenol aralkyl type epoxy resin having a biphenyl skeleton is insufficient, so continuous moldability is insufficient. In Comparative Example 2 in which a phenol aralkyl resin having a biphenyl skeleton was used as a curing agent, since the resin composition was easily formed on the surface of the metal mold during continuous molding due to low curability and high lipophilicity, continuous moldability was obtained. Insufficient, in addition, because the temperature of the glass transition point is low, the high temperature storage characteristics are also insufficient. In Comparative Example 3 in which a triphenylmethane type phenol resin was used for the hardener, the surface of the resin was cracked during combustion due to a high crosslinking density, and the flame resistance was insufficient, and the water absorption was high due to the high density of the hydroxyl group and the crosslinking density. Moreover, the thermal stress at the solder reflow temperature is also high, so the solder resistance is insufficient.

As a result of the above, only when the resin composition using the phenol resin (A) of the present invention is used, the balance of fluidity (spiral flow), flame resistance, continuous formability, weld resistance, and high-temperature storage characteristics can be obtained. Superior results have a significant effect over the expected range.

In addition, the evaluation results of the adhesiveness and water absorption of the resin compositions of Examples 1 to 3 as a reference example are shown below.

As described in Reference Examples 1 and 2, the resin compositions of Examples 1 and 2 were excellent in adhesion resistance in addition to the above-described characteristics.

On the other hand, the resin composition used in Example 3 of Reference Example 3 is excellent in low water absorbability, and therefore it is expected that solder resistance under more severe conditions is also superior.

Therefore, the push judgment can be suitably applied to a semiconductor sealing material requiring higher reliability.

According to the present invention, a semiconductor sealing resin composition having fluidity (spiral flow), flame resistance, and solder resistance and having excellent continuous moldability and high-temperature storage characteristics can be obtained, which is suitable for sealing a semiconductor device.

It is needless to say that the above-described embodiments and the plural modifications can be combined without departing from the scope of the contents. In the above-described embodiments and modifications, although the structure of each part is specifically described, the structure and the like can be variously modified within the scope of the present invention.

The application is based on and claims the priority of Japanese Patent Application No. 2009-148048, filed on Jun. 22, 2011.

1. . . Semiconductor component

2. . . Bonded hardened body

3. . . Die block

4. . . Gold Line

5. . . Lead frame

6. . . Hardened body

7. . . Solder resist

8. . . Substrate

9. . . Solder ball

FIG. 1 is a view showing a cross-sectional structure of an example of a semiconductor device using the resin composition for semiconductor encapsulation of the present invention.

FIG. 2 is a view showing an example of a cross-sectional structure of an example of a single-sided sealed semiconductor device using the resin composition for semiconductor encapsulation of the present invention.

Fig. 3 is a GPC chart of the phenol resin 1 used in the examples and comparative examples.

Fig. 4 is a FD-MS chart of the phenol resin 1 used in the examples and the comparative examples.

Fig. 5 is a GPC chart of the phenol resin 2 used in the examples and the comparative examples.

Fig. 6 is a GPC chart of the phenol resin 3 used in the examples and the comparative examples.

Fig. 7 is a FD-MS chart of the phenol resin 3 used in the examples and the comparative examples.

1. . . Semiconductor component

2. . . Bonded hardened body

3. . . Die block

4. . . Gold Line

5. . . Lead frame

6. . . Hardened body

Claims (6)

A resin composition for semiconductor encapsulation, comprising: a phenol resin (A) containing a component represented by the following general formula (1); an epoxy resin (B); and an inorganic filler (C); (In general formula (1), two hydroxy groups bonded to the same naphthalene group are bonded to different carbon atoms on the naphthalene ring, and R1 is independently a hydrocarbon group having 1 to 60 carbon atoms, and a is independently 0 to 5 The integer, b is independent of each other as an integer from 0 to 4; n is an integer from 0 to 10. The resin composition for semiconductor encapsulation according to the first aspect of the invention, wherein the phenol resin (A) contains a component of the general formula (1) wherein R1 is a group represented by the following general formula (2); (In the general formula (2), R2 and R3 are each independently a hydrogen atom and a hydrocarbon group having 1 to 3 carbon atoms, and R4 is independently a hydrocarbon group having 1 to 3 carbon atoms, and c is independently an integer of 0 to 4, and m is 1 An integer of ~5). The resin composition for semiconductor encapsulation according to the first aspect of the invention, wherein the phenol resin (A) is contained in the total phenol resin (A) and contains 50% by mass or more and 100% by mass or less of n = 0 to 2 ingredient. The resin composition for semiconductor encapsulation according to the first aspect of the invention, wherein the phenol resin (A) is contained in the total phenol resin (A) and contains 25 mass% or more and 70 mass% or less of n=0. The resin composition for semiconductor encapsulation according to any one of claims 2 to 4, wherein the phenol resin (A) is in the area conversion algorithm of the gel permeation chromatography (GPC) measurement method, in total phenol In the resin (A), R1 containing 20% by area or more and 80% by area or less is a component represented by the above formula (2). A semiconductor device which is obtained by sealing a semiconductor element using the resin composition for semiconductor encapsulation according to any one of claims 1 to 5.