JP2008251635A - GOLD ALLOY WIRE FOR BONDING WIRE HAVING HIGH JUNCTION RELIABILITY AND HIGH CIRCULARITY OF COMPRESSION BONDING BALL, PREVENTING EASY DAMAGE OF Al PAD AND ITS LOWER PORTION, AND HAVING STILL HIGHER RESIN FLOW PERFORMANCE - Google Patents

GOLD ALLOY WIRE FOR BONDING WIRE HAVING HIGH JUNCTION RELIABILITY AND HIGH CIRCULARITY OF COMPRESSION BONDING BALL, PREVENTING EASY DAMAGE OF Al PAD AND ITS LOWER PORTION, AND HAVING STILL HIGHER RESIN FLOW PERFORMANCE Download PDF

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JP2008251635A
JP2008251635A JP2007088090A JP2007088090A JP2008251635A JP 2008251635 A JP2008251635 A JP 2008251635A JP 2007088090 A JP2007088090 A JP 2007088090A JP 2007088090 A JP2007088090 A JP 2007088090A JP 2008251635 A JP2008251635 A JP 2008251635A
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ppm
bonding
wire
gold alloy
pad
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Kazumasa Maki
一誠 牧
Yuji Nakada
有治 中田
Masayoshi Nagao
昌芳 長尾
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a gold alloy wire for a bonding wire having high junction reliability and high circularity of a compression bonding ball, preventing easy damage of an Al pad and its lower portion and having still higher resin flow performance. <P>SOLUTION: The gold alloy wire has a component composition containing one or two kinds of Pt and Pd of 2,000 ppm-2 wt.% in total; 2,000 ppm-5 wt.% Ag; 1-200 ppm Ir; 2-200 ppm Ca; 1-50 ppm Be and one or more kinds of Sr, Eu, La and Y of 1-200 ppm so that the total of Ca, Be, Sr, Eu, La and Y is not more than 200 ppm; and containing Au and inevitable impurities as the remainder. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は半導体装置の実装のためのボンディングワイヤ用金合金線に関するものであり、広い温度範囲で使用することができるトランジスタ、ＬＳＩ、ＩＣなど半導体素子のチップ電極と外部リード部とを接続するための高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線に関するものである。   The present invention relates to a gold alloy wire for bonding wire for mounting a semiconductor device, for connecting a chip electrode of a semiconductor element such as a transistor, LSI, and IC that can be used in a wide temperature range and an external lead portion. The present invention relates to a gold alloy wire for bonding wires having a high bonding reliability and a high roundness of a press-bonded ball, and an Al pad and its lower part are less likely to be damaged and have higher resin flow resistance.

近年、トランジスタ、ＬＳＩ、ＩＣなど半導体素子は広い温度範囲で使用されるようになっている。例えば、車載用ＩＣの一部はエンジン近くなどの高温環境下で使用されており、また高周波用ＩＣは動作温度がますます高くなる傾向にあり、かかる高温環境下に曝されても高度の信頼性が要求されている。
かかる高温環境下で使用されるＩＣチップ上の電極と外部リード部を接続するボンディングワイヤ用金合金線として、Ｐｄ、Ｐｔ、Ｒｈ、Ｉｒ、Ｏｓ、Ｒｕの内の少なくとも１種を合計で１０００ｐｐｍ〜５質量％、Ｃａ、Ｂｅ、Ｇｅ、Ｓｉ、Ｆｅ、Ｙ、希土類の内の少なくとも１種を合計で１〜５０ｐｐｍ含有し、残部がＡｕおよび不可避不純物からなる成分組成を有するボンディングワイヤ用金合金線が知られている。これらボンディングワイヤ用金合金線はいずれも白金族金属を多めに含有させて高温での圧着ボールとＡｌパッドの接合強度を向上させ、さらにＣａ、Ｂｅなどを含有させて硬さを高くしてループの安定性を向上させており、これらボンディングワイヤ用金合金線を使用してＩＣチップ上の電極と外部リード部を接続するには、一般に金合金線を超音波併用熱圧着ボンディングする方法が主として用いられている。 In recent years, semiconductor elements such as transistors, LSIs, and ICs have been used in a wide temperature range. For example, some in-vehicle ICs are used in high-temperature environments such as near the engine, and high-frequency ICs tend to have higher operating temperatures. Even if they are exposed to such high-temperature environments, they are highly reliable. Sex is required.
As a gold alloy wire for bonding wires that connects an electrode on an IC chip used in such a high temperature environment and an external lead part, at least one of Pd, Pt, Rh, Ir, Os, and Ru is 1000 ppm in total. Gold alloy wire for bonding wire containing 5% by mass, Ca, Be, Ge, Si, Fe, Y, at least one of rare earths in a total of 1 to 50 ppm, with the balance being composed of Au and inevitable impurities It has been known. All of these gold alloy wires for bonding wires contain a large amount of platinum group metal to improve the bonding strength between the press-bonded ball and Al pad at high temperature, and further contain Ca, Be, etc. to increase the hardness and loop. In order to connect the electrodes on the IC chip and the external lead using these gold alloy wires for bonding wires, the method of thermocompression bonding with gold alloy wires is mainly used. It is used.

近年、半導体素子の集積化が進むことにより、半導体素子のＡｌパッド面積が小さくなり、高温の過酷な使用環境で高度の信頼性が要求される車載用ＩＣや、動作温度が高くなる高周波用ＩＣなどでは、ボールボンディングによる接合界面における接合強度の低下や電気抵抗の上昇による接合不良の発生が問題視されており、これらの接合不良は、上記の接合面積の縮小等のボンディング条件の悪化により、益々発生しやすくなる傾向があるところから、従来よりも高い接合信頼性（ある環境下でのボールボンディングによる接合界面における接合強度や電気抵抗の持続性）を確保することが求められている。 In recent years, with the progress of integration of semiconductor elements, the Al pad area of the semiconductor elements has been reduced, and in-vehicle ICs that require a high degree of reliability in high-temperature and severe use environments, and high-frequency ICs that have higher operating temperatures. In such cases, the occurrence of poor bonding due to a decrease in bonding strength at the bonding interface due to ball bonding or an increase in electrical resistance has been regarded as a problem, and these bonding defects are caused by deterioration of bonding conditions such as the reduction of the bonding area described above. Since there is a tendency to generate more and more, it is required to ensure higher bonding reliability (bonding strength and durability of electric resistance at a bonding interface by ball bonding in a certain environment) than before.

さらに、また、ボールボンディングでの圧着ボールの真円性が低いと、圧着ボールの一部がＡｌパッドからはみ出し、隣の圧着ボールと接触することによるショート不良が発生し、このショート不良は、ボンディングパッドピッチの縮小（すなわちＡｌパッドの隙間間隔並びにＡｌパッド面積の縮小）により益々発生しやすくなることから、従来よりも圧着ボールの高い真円性が求められる。   Furthermore, if the roundness of the press-bonded ball in ball bonding is low, a part of the press-bonded ball protrudes from the Al pad and a short-circuit failure occurs due to contact with the adjacent press-bonded ball. Since it is more likely to occur due to the reduction in the pad pitch (that is, the reduction in the gap between the Al pads and the area of the Al pad), a higher roundness of the press-bonded ball than before is required.

また、一方で、半導体素子のチップ電極と外部リード部とを接合したワイヤのループ部の長さ（以下、ループ長さという）が長くなるとともに平行してボンディングされた隣のループとの間隔が狭くなっており、かかる現状に対応すべく、ボンディングワイヤとして使用する金合金線の線径を益々細くする傾向にある。   On the other hand, the length of the loop portion of the wire joining the chip electrode of the semiconductor element and the external lead portion (hereinafter referred to as the loop length) is increased and the distance from the adjacent loop bonded in parallel is increased. In order to respond to such a present situation, the diameter of the gold alloy wire used as a bonding wire tends to be further reduced.

さらに、ワイヤをボンディングしてループを形成した後、樹脂でモールディングするが、その際にボンディングワイヤが樹脂により流されると、隣のループと接触し、ショートするために半導体装置の不良品が発生し歩留が低下する。この樹脂流れについても従来のボンディングワイヤ用金合金線の線径が２５μｍや３０μｍの場合は問題となることが少なかったが、半導体素子の高集積化が進むにつれて、半導体素子のボンディングパッドピッチが縮小し、それらに対応するためにワイヤの線径を細くしてボンディングを行うが、線径が２０μｍ未満になると樹脂のモールディング時にループが流されやすくなる。したがって、線径の細いワイヤであっても樹脂流れが発生し難い特性（以下、この特性を耐樹脂流れ性という）を有することが必要である。   Furthermore, after forming a loop by bonding wires, molding is performed with resin, but if the bonding wire is flowed with resin at that time, a contact with the adjacent loop occurs, causing a short circuit of the semiconductor device. Yield decreases. This resin flow is less likely to be a problem when the wire diameter of the conventional gold alloy wire for bonding wires is 25 μm or 30 μm. However, as the integration of semiconductor devices increases, the bonding pad pitch of the semiconductor devices decreases. In order to cope with this, bonding is performed by reducing the wire diameter of the wire. However, if the wire diameter is less than 20 μm, a loop tends to flow when molding the resin. Therefore, it is necessary to have a characteristic that resin flow hardly occurs even with a thin wire diameter (hereinafter, this characteristic is referred to as resin flow resistance).

かかる近年の厳しい要求を満たすことのできる高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有する優れたボンディングワイヤ用金合金線として、例えば、
（イ）ＰｔおよびＰｄの内の１種または２種を合計で５０００ｐｐｍ〜２質量％、Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２０〜２００ｐｐｍ、
Ｅｕ：１０〜２００ｐｐｍ、
を含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（ロ）ＰｔおよびＰｄの内の１種または２種を合計で５０００ｐｐｍ〜２質量％、Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２０〜２００ｐｐｍ、
Ｅｕ：１０〜２００ｐｐｍを含有し、さらに、
Ｂｅ：０．１〜３０ｐｐｍを含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（ハ）ＰｔおよびＰｄの内の１種または２種を合計で５０００ｐｐｍ〜２質量％、Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２０〜２００ｐｐｍ、
Ｅｕ：１０〜２００ｐｐｍを含有し、さらに、
Ｌａ：１０〜２００ｐｐｍを含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（ニ）ＰｔおよびＰｄの内の１種または２種を合計で５０００ｐｐｍ〜２質量％、Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２０〜２００ｐｐｍ、
Ｅｕ：１０〜２００ｐｐｍを含有し、さらに、
Ｂｅ：０．１〜３０ｐｐｍを含有し、さらに、
Ｌａ：１０〜２００ｐｐｍを含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（ホ）前記Ｃａ，Ｅｕ，ＢｅおよびＬａの内の１種または２種以上を合計で５０〜２５０ｐｐｍの範囲内で含有することを特徴とする前記（イ）〜（ニ）記載の高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（へ）さらにＡｇ：１〜２０ｐｐｍを含有することを特徴とする前記（イ）〜（ホ）記載の高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（ト）ボンディングワイヤ用金合金線の０．２％耐力（Ｐａ）をσ０．２、ヤング率（Ｐａ）をＥ、破断伸び率をＥＬとすると、
Ｅ≧７５ＧＰａ、
（σ０．２／Ｅ）≧２．２×１０−３、
２％≦ＥＬ≦１０％、
の条件を満たすことを特徴とする前記（イ）〜（ヘ）記載の高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線が提供されている（特許文献１参照）。
特開２００６−３５１６９９号公報 As an excellent gold alloy wire for bonding wire having high bonding reliability that can meet such severe demands in recent years, high roundness of the press-bonded ball, high straightness and high resin flow resistance, for example,
(I) One or two of Pt and Pd in a total of 5000 ppm to 2% by mass, Ir: 1 to 200 ppm,
Ca: 20 to 200 ppm,
Eu: 10 to 200 ppm,
A gold alloy for bonding wires having high bonding reliability, high roundness of a press-bonded ball, high straightness, and high resin flow resistance, characterized in that it has a component composition consisting of Au and the remainder consisting of Au and inevitable impurities line,
(B) One or two of Pt and Pd in total 5000 ppm to 2% by mass, Ir: 1 to 200 ppm,
Ca: 20 to 200 ppm,
Eu: contains 10 to 200 ppm,
Be: containing 0.1 to 30 ppm, the remainder having a component composition consisting of Au and inevitable impurities, high bonding reliability, high roundness of the press-bonded ball, high straightness, and high resin flow resistance Gold alloy wire for bonding wire,
(C) One or two of Pt and Pd in total 5000 ppm to 2% by mass, Ir: 1 to 200 ppm,
Ca: 20 to 200 ppm,
Eu: contains 10 to 200 ppm,
La: Contains 10 to 200 ppm, and the remainder has a component composition composed of Au and inevitable impurities, and has high bonding reliability, high roundness of the press-bonded ball, high straightness, and high resin flow resistance Gold alloy wire for bonding wire,
(D) One or two of Pt and Pd in total 5000 ppm to 2% by mass, Ir: 1 to 200 ppm,
Ca: 20 to 200 ppm,
Eu: contains 10 to 200 ppm,
Be: contains 0.1 to 30 ppm,
La: Contains 10 to 200 ppm, and the remainder has a component composition composed of Au and inevitable impurities, and has high bonding reliability, high roundness of the press-bonded ball, high straightness, and high resin flow resistance Gold alloy wire for bonding wire,
(E) One or two or more of Ca, Eu, Be and La are contained within a total range of 50 to 250 ppm, and the high joint reliability according to (a) to (d) above , Gold alloy wire for bonding wire with high roundness of crimped ball, high straightness and high resin flow resistance,
(F) Furthermore, Ag: 1 to 20 ppm, high bonding reliability as described in the above (a) to (e), high roundness of the press-bonded ball, high straightness and high resin flow resistance Gold alloy wire for bonding wire,
(G) When the 0.2% proof stress (Pa) of the gold alloy wire for bonding wire is σ 0.2 , the Young's modulus (Pa) is E, and the elongation at break is E L ,
E ≧ 75 GPa,
(Σ 0.2 /E)≧2.2×10 −3 ,
2% ≦ E L ≦ 10%,
The gold alloy wire for bonding wires having the high bonding reliability described in the above (a) to (f), high roundness of the press-bonded ball, high straightness, and high resin flow resistance, (See Patent Document 1).
JP 2006-351699 A

この従来のボンディングワイヤ用金合金線は、確かに高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有しているが、近年、デバイスの多外部端子化に伴い、ループ長を長くする必要性に迫られており、この長いループを有するデバイスを正常に樹脂モールドするにはなお一層の高い耐樹脂流れ性が必要になってきた。すなわち、デバイスは一般に図１の平面図に示されるようにＳｉチップ４上のＡｌパッド１と外部端子２とをボンディングワイヤ用金合金線３で接合し、これを樹脂モールドすることによりデバイスを作製しているが（樹脂モールドは図１において点線５で示されている）、デバイスに設けられる外部端子２の数が少ないときは外部端子２の間隔が広いために樹脂モールドしてもボンディングワイヤ用金合金線３が相互に接触することはない。
外部端子２と外部端子２の間隔は、外部端子数の増加とともに狭くなるが、製造上の制約により下限がある。そのためデバイスの多外部端子化に伴い、図２に示されるようにＡｌパッドから離して外部端子を設置しなければならず、特に両端部の外部端子２１および外部端子２２に接続するボンディングワイヤ用金合金線３１および３２の長さを長くしなければならない。このようにボンディングワイヤ用金合金線３の長さが一層長くなると従来のボンディングワイヤ用金合金線では耐樹脂流れ性という要求に対して十分に対応できるものではなく、なお一層の高い耐樹脂流れ性を有するボンディングワイヤ用金合金線が求められていた。 This conventional gold alloy wire for bonding wires has high bonding reliability, high roundness of crimped balls, high straightness and high resin flow resistance. Along with this, there is an urgent need to increase the loop length, and even higher resin flow resistance has become necessary in order to normally resin mold a device having this long loop. That is, as shown in the plan view of FIG. 1, the device is generally manufactured by bonding the Al pad 1 on the Si chip 4 and the external terminal 2 with a gold alloy wire 3 for bonding wire, and resin molding this. However, the resin mold is indicated by the dotted line 5 in FIG. 1. When the number of external terminals 2 provided in the device is small, the distance between the external terminals 2 is wide, so even if resin molding is used, the bonding wire is used. The gold alloy wires 3 do not contact each other.
The interval between the external terminal 2 and the external terminal 2 becomes narrow as the number of external terminals increases, but there is a lower limit due to manufacturing restrictions. Therefore, as the number of external terminals of the device is increased, external terminals must be set apart from the Al pad as shown in FIG. 2, and in particular, bonding wire gold connected to the external terminals 21 and 22 at both ends. The length of the alloy wires 31 and 32 must be increased. As described above, when the length of the gold alloy wire 3 for bonding wire is further increased, the conventional gold alloy wire for bonding wire cannot sufficiently meet the requirement of resin flow resistance, and still higher resin flow resistance. There has been a demand for a gold alloy wire for bonding wire that has the property.

本発明者らは、高い接合信頼性および圧着ボールの高い真円性を有し、さらに一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線を開発すべく研究を行った。その結果、
（ａ）純度：９９．９９９質量％の高純度金に、ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、Ｉｒ：１〜２００ｐｐｍ、Ｃａ：２〜２００ｐｐｍを含有させた金合金に、さらにＡｇ：２０００ｐｐｍ〜５質量％を含有させた金合金線は、高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するようになる、
（ｂ）前記（ａ）記載の組成を有する金合金線に、さらにＢｅ：１〜５０ｐｐｍを含有させた金合金線は、ＢｅがＡｕの結晶格子に歪みを与えて、ボンディングワイヤ用金合金線のフリーエアボールの加工硬化性を適度に高め、ボンディング時にＡｌパッドが十分に塑性変形し、Ａｌパッドの酸化皮膜であるＡｌ２Ｏ３が破壊されて広くＡｌ新生面が生成し、ＡｌパッドとＡｕ圧着ボールが広い領域で接合できるようになり、また、再結晶温度を下げる効果を有することから、ループ高さを上げることができ、そのため適切なループ高さを実現できるので必要に応じて添加することができるが、その際にＢｅはＣａとの合計は２００ｐｐｍ以下となることが好ましい、
（ｃ）前記（ａ）記載の組成を有する金合金線に、さらにＳｒ、Ｅｕ、ＬａおよびＹのうちの１種または２種以上の合計：１〜２００ｐｐｍを含有させた金合金線は、ボンディングワイヤ用金合金線の機械的強度を高めてなお一層の高い耐樹脂流れ性を有する金合金線を得ることができると共にさらに再結晶温度を上げることができるので必要に応じて添加することができるが、その際にＳｒ、Ｅｕ、ＬａおよびＹのうちの１種または２種以上とＣａとの合計は２００ｐｐｍ以下となることが好ましい、
（ｄ）前記（ｂ）記載の合金にさらにＳｒ、Ｅｕ、ＬａおよびＹのうちの１種または２種以上を添加してもよく、その際にＣａ，Ｂｅ、Ｓｒ、Ｅｕ、ＬａおよびＹの合計が２００ｐｐｍ以下の範囲内にあることが一層好ましい、などの研究結果が得られたのである。 The present inventors have studied to develop a gold alloy wire for bonding wires having high bonding reliability, high roundness of a press-bonded ball, and further higher resin flow resistance. as a result,
(A) Purity: High purity gold of 99.999 mass% contains one or two of Pt and Pd in a total of 2000 ppm to 2 mass%, Ir: 1 to 200 ppm, Ca: 2 to 200 ppm A gold alloy wire containing Ag: 2000 ppm to 5 mass% in addition to the gold alloy has high bonding reliability and high roundness of the press-bonded ball, and the Al pad and its lower part are not easily damaged and further Has high resin flow resistance,
(B) A gold alloy wire in which Be: 1 to 50 ppm is further added to the gold alloy wire having the composition described in the above (a), the Be is distorted in the crystal lattice of Au, and the gold alloy wire for bonding wire The workability of the free air ball is moderately increased, the Al pad is sufficiently plastically deformed during bonding, Al 2 O 3 which is the oxide film of the Al pad is destroyed, and a wide new Al surface is formed. Since the pressure-bonded ball can be joined in a wide area and has the effect of lowering the recrystallization temperature, the loop height can be increased, so that an appropriate loop height can be realized and added as necessary. In this case, it is preferable that the total amount of Be and Ca is 200 ppm or less.
(C) A gold alloy wire having the composition described in (a) above and further containing one or more of Sr, Eu, La and Y: 1 to 200 ppm in total is bonded. A gold alloy wire having higher resin flow resistance can be obtained by increasing the mechanical strength of the gold alloy wire for wire, and the recrystallization temperature can be further increased, so that it can be added as necessary. However, in that case, the total of one or more of Sr, Eu, La and Y and Ca and Ca is preferably 200 ppm or less.
(D) One or more of Sr, Eu, La, and Y may be further added to the alloy described in (b), and at that time, Ca, Be, Sr, Eu, La, and Y Research results such as that the total is more preferably within the range of 200 ppm or less were obtained.

この発明は、かかる研究結果に基づいて成されたものであって、
（１）ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
を含有し、残りがＡｕおよび不可避不純物からなる成分組成を有する高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（２）ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｂｅ：１〜５０ｐｐｍ、
をＣａとＢｅの合計が２００ｐｐｍ以下になるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有する高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（３）ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｓｒ、Ｅｕ、ＬａおよびＹの内の１種または２種以上：１〜２００ｐｐｍ、
をＣａ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計が２００ｐｐｍ以下となるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有する高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、
（４）ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｂｅ：１〜５０ｐｐｍ、
Ｓｒ、Ｅｕ、ＬａおよびＹの内の１種または２種以上：１〜２００ｐｐｍ、
をＣａ、Ｂｅ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計が２００ｐｐｍ以下となるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有する高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線、に特徴を有するものである。 The present invention has been made based on such research results,
(1) One or two of Pt and Pd in total 2000 ppm to 2% by mass, Ag: 2000 ppm to 5% by mass,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
In addition, it has a high bonding reliability with a component composition consisting of Au and inevitable impurities, and a high roundness of the press-bonded ball. Further, the Al pad and its lower part are less likely to be damaged and have higher resin flow resistance. Gold alloy wire for bonding wire,
(2) One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
Be: 1 to 50 ppm,
In which the total of Ca and Be is 200 ppm or less, and the remainder has a component composition consisting of Au and inevitable impurities, and has high joint reliability and high roundness of the press-bonded ball. Is a gold alloy wire for bonding wires that is not easily damaged and has higher resin flow resistance,
(3) A total of 2000 ppm to 2% by mass of one or two of Pt and Pd,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
One or more of Sr, Eu, La and Y: 1 to 200 ppm,
The total of Ca, Sr, Eu, La, and Y is 200 ppm or less, and the remainder has a high composition reliability having a component composition consisting of Au and inevitable impurities and a high roundness of the press-bonded ball, Furthermore, a gold alloy wire for bonding wire that has an Al pad and its lower part that are less likely to be damaged and that has higher resin flow resistance,
(4) One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
Be: 1 to 50 ppm,
One or more of Sr, Eu, La and Y: 1 to 200 ppm,
Has a high composition reliability and a high roundness of the press-bonded ball having a component composition consisting of Au and inevitable impurities, with the total of Ca, Be, Sr, Eu, La and Y being 200 ppm or less. In addition, it is characterized by a gold alloy wire for bonding wires, which is hard to damage the Al pad and its lower part and has higher resin flow resistance.

次に、この発明の高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線において、成分組成を前述のように限定した理由を説明する。   Next, in the gold alloy wire for bonding wire having the high bonding reliability and the high roundness of the press-bonded ball of the present invention, and the Al pad and its lower part are less likely to be damaged and have higher resin flow resistance. The reason why the composition is limited as described above will be described.

Ｐｔ、Ｐｄ：
ＰｔおよびＰｄは、共にＡｕと全率固溶する元素であり、圧着ボールとＡｌパッドとの接合強度の劣化を抑えて接合信頼性を向上させると共にボンディングワイヤ用金合金線の機械的強度を高める効果を有する。それは接合界面近傍でＰｔやＰｄを含む相が層状に生成し、その相がＡｕの拡散速度を低下させる層(いわゆるＡｕ拡散に対するバリア層)として作用するために、Ａｕの拡散に伴い接合部に発生するボイドの生成速度を抑制し、その結果として、圧着ボールとＡｌパッドとの接合強度の劣化を抑えて接合信頼性を向上しているものと考えられ、この接合強度の劣化の抑制（接合信頼性を向上する）効果はＰｔやＰｄの量が多いほど高くなる。
しかし、ＰｔおよびＰｄの内の１種または２種の合計が２０００ｐｐｍ未満では接合強度劣化の抑制効果が限定されると共に機械的強度を高める効果が十分でないので好ましくなく、一方、ＰｔおよびＰｄの内の１種または２種の合計が２質量％を越えて含まれると、機械的強度は向上するもののボールの硬度が高くなりすぎてボンディング時にＩＣチップのＡｌパッドとその下部の割れや損傷を与えるようになるので好ましくない。したがって、ＰｔおよびＰｄの内の１種または２種の合計を２０００ｐｐｍ〜２質量％に定めた。 Pt, Pd:
Both Pt and Pd are elements which are solid-dissolved in total with Au, and suppress the deterioration of the bonding strength between the press-bonded ball and the Al pad to improve the bonding reliability and increase the mechanical strength of the gold alloy wire for bonding wire. Has an effect. This is because a phase containing Pt or Pd is formed in the vicinity of the bonding interface, and the phase acts as a layer that reduces the diffusion rate of Au (so-called barrier layer against Au diffusion). It is considered that the generation rate of the generated voids is suppressed, and as a result, the deterioration of the bonding strength between the press-bonded ball and the Al pad is suppressed to improve the bonding reliability. The effect of improving the reliability increases as the amount of Pt or Pd increases.
However, if the total of one or two of Pt and Pd is less than 2000 ppm, the effect of suppressing the deterioration of bonding strength is limited and the effect of increasing the mechanical strength is not sufficient. If the total of 1 type or 2 types exceeds 2% by mass, the mechanical strength is improved, but the hardness of the ball becomes too high and the IC chip Al pad and its lower part are cracked or damaged during bonding. This is not preferable. Therefore, the total of one or two of Pt and Pd was set to 2000 ppm to 2% by mass.

Ａｇ：
Ａｇは、Ａｕと全率固溶する元素であるため、高濃度まで添加することが可能であり、ボンディングワイヤ用金合金線の機械的強度を高める効果を有し、さらにＰｔおよびＰｄと共存することにより接合信頼性を高く維持できる作用を有するが、Ａｇが２０００ｐｐｍ未満ではワイヤの強度が十分に得られないので好ましくなく、一方、Ａｇを５質量％を越えて含有するとＡｌパッドとの接合信頼性が低下し、ボールの加工硬化性が高くなりすぎてボールボンディングの際にＡｌパッドとその下部に損傷を発生させるので好ましくない。したがって、Ａｇの含有量は２０００ｐｐｍ〜５質量％に定めた。 Ag:
Ag is an element that is completely dissolved with Au, so it can be added to a high concentration, has the effect of increasing the mechanical strength of the gold alloy wire for bonding wires, and coexists with Pt and Pd. However, if Ag is less than 2000 ppm, the strength of the wire cannot be obtained sufficiently, which is not preferable. On the other hand, if the Ag content exceeds 5 mass%, the bonding reliability with the Al pad is not preferable. And the work hardening of the ball becomes too high, causing damage to the Al pad and its lower part during ball bonding. Therefore, the content of Ag is set to 2000 ppm to 5 mass%.

Ｉｒ：
Ｉｒは、金合金の高温における粒成長(結晶粒の粗大化)を抑制する作用を有し、そのため、フリーエアボールを形成する際に、ボール部からの熱の影響により、ボール直上のワイヤ部(熱影響部)の結晶粒が粗大化することを防ぐと共に、凝固したフリーエアボール部は多数の微細な結晶粒から形成され、接合時に圧着ボールが放射状に均等に広がり、圧着ボールの真円性が向上する効果を有するが、Ｉｒの含有量が１ｐｐｍ未満では所定の効果が得られず、一方、Ｉｒが２００ｐｐｍを超えても上記効果は飽和し、添加による効果の明確な向上が認められない上に、ボールの硬度が高くなり、ＩＣチップの破壊あるいは損傷が生じるようになるので好ましくない。したがって、Ｉｒの含有量を１〜２００ｐｐｍに定めた。 Ir:
Ir has an effect of suppressing grain growth (crystal grain coarsening) at a high temperature of the gold alloy. Therefore, when forming a free air ball, the wire portion directly above the ball is affected by the influence of heat from the ball portion. In addition to preventing the crystal grains in the (heat-affected zone) from becoming coarse, the solidified free air ball part is formed of a large number of fine crystal grains, and the crimped balls spread radially and evenly during bonding, resulting in a perfect circle of the crimped balls. However, when the Ir content is less than 1 ppm, the predetermined effect cannot be obtained. On the other hand, when the Ir content exceeds 200 ppm, the above effect is saturated, and a clear improvement of the effect by addition is recognized. In addition, since the hardness of the ball is increased and the IC chip is broken or damaged, it is not preferable. Therefore, the content of Ir is set to 1 to 200 ppm.

Ｃａ：
アルカリ土類金属であるＣａは、金属結合半径がＡｕの金属結合半径より大きく、Ａｕの結晶格子に歪みを与えて、ボンディングワイヤ用金合金線の機械的強度ならびにフリーエアボールの加工硬化性を高め、さらに再結晶温度を上げ、金合金線のループ高さを低くする効果があるので添加するが、Ｃａの含有量が２ｐｐｍ未満ではフリーエアボールの加工硬化性が低いことからボンディングの際にＡｌパッドが十分に塑性変形できず、したがって、Ａｌパッドの酸化皮膜が完全に破壊されずにＡｌ新生面の生成面積が減少することからＡｌパッドと圧着ボールの接合面積が減少し、接合信頼性が低下するので好ましくない。一方、Ｃａの含有量が２００ｐｐｍを越えると、フリーエアボールの表面に多量の酸化物が生成し、さらにフリーエアボールの底部中央に接合に寄与できない大きな引け巣が形成されるようになって接合信頼性が低下し、さらにボールの加工硬化性が高くなりすぎるため、ボールボンディングの際にＡｌパッドとその下部に損傷が発生するようになるので好ましくない。したがって、Ｃａの含有量を２〜２００ｐｐｍに定めた。 Ca:
Ca, an alkaline earth metal, has a metal bond radius larger than the metal bond radius of Au, strains the Au crystal lattice, and improves the mechanical strength of the gold alloy wire for bonding wires and the work hardening of free air balls. This is effective because it increases the recrystallization temperature and lowers the loop height of the gold alloy wire. However, if the Ca content is less than 2 ppm, the work hardenability of the free air ball is low. The Al pad cannot be sufficiently plastically deformed. Therefore, the Al pad oxide film is not completely destroyed and the generation area of the Al new surface is reduced. Therefore, the bonding area of the Al pad and the press-bonded ball is reduced, and the bonding reliability is improved. Since it falls, it is not preferable. On the other hand, when the Ca content exceeds 200 ppm, a large amount of oxide is generated on the surface of the free air ball, and a large shrinkage cavity that cannot contribute to the bonding is formed at the center of the bottom of the free air ball. Since the reliability is lowered and the work hardenability of the ball becomes too high, the Al pad and its lower part are damaged during ball bonding, which is not preferable. Therefore, the content of Ca is set to 2 to 200 ppm.

Ｂｅ：
Ｂｅは金属結合半径がＡｕの金属結合半径より小さく、やはりＡｕの結晶格子に歪みを与えて、ボンディングワイヤ用金合金線のフリーエアボールの加工硬化性を高め、再結晶温度を下げる効果を有することから、ループ高さを上げることができ、そのため適切なループ高さを実現できるので必要に応じて添加するが、その添加量が１ｐｐｍ未満では所定の効果が得られず、一方、Ｂｅを５０ｐｐｍを越えて含有させると、フリーエアボールの表面に多量の酸化物が生成し、さらにフリーエアボールの底部中央に接合に寄与できない大きな引け巣が形成されるため、接合信頼性が低下し、さらに、ボール直上部及びボール部の結晶粒径の増大が生じて圧着ボール部の真円性が低下するとともにボールの加工硬化が高くなりすぎるためボールボンディングの際にＡｌパッドとその下部に損傷が発生するようになるので好ましくない。したがって、Ｂｅの含有量を１〜５０ｐｐｍに定めた。 Be:
Be has a metal bond radius smaller than the metal bond radius of Au and also has the effect of increasing the work hardenability of the free air ball of the gold alloy wire for bonding wire and lowering the recrystallization temperature by straining the Au crystal lattice. Therefore, the loop height can be increased, and therefore an appropriate loop height can be realized, so that it is added as necessary. However, if the addition amount is less than 1 ppm, a predetermined effect cannot be obtained, while Be is 50 ppm. If it is contained in excess of, a large amount of oxide is generated on the surface of the free air ball, and a large shrinkage nest that cannot contribute to the bonding is formed at the center of the bottom of the free air ball. Since the crystal grain size of the ball upper part and the ball part increases, the roundness of the press-bonded ball part decreases and the work hardening of the ball becomes too high. Undesirable damage to the bottom and the Al pad during loading will be produced. Therefore, the content of Be is set to 1 to 50 ppm.

Ｓｒ、Ｅｕ、Ｌａ、Ｙ：
Ｓｒはアルカリ土類金属であるが、希土類元素であるＥｕ、Ｌａ、Ｙとほぼ同等の効果があり、いずれも金属結合半径がＡｕの金属結合半径より大きく、Ａｕの結晶格子に歪みを与えて、ボンディングワイヤ用金合金線の機械的強度ならびにフリーエアボールの加工硬化性を高めるとともに、再結晶温度を上げ、金合金線のループ高さを低くする効果があるので必要に応じて添加するが、これら成分が１ｐｐｍ未満では所定の効果が得られず、一方、Ｓｒ、Ｅｕ、Ｌａ、Ｙの含有量が２００ｐｐｍを越えると、フリーエアボールの表面に多量の酸化物が生成し、さらにフリーエアボールの底部中央に接合に寄与できない大きな引け巣が形成されるので接合信頼性が低下し、ボールの加工硬化が高くなり、ボールボンディングの際にＡｌパッドとその下部の損傷を生じるので好ましくない。したがって、Ｓｒ、Ｅｕ、Ｌａ、Ｙの含有量を１〜２００ｐｐｍに定めた。 Sr, Eu, La, Y:
Although Sr is an alkaline earth metal, it has almost the same effect as the rare earth elements Eu, La, and Y, and the metal bond radius is larger than the metal bond radius of Au, and the crystal lattice of Au is distorted. In addition to improving the mechanical strength of the gold alloy wire for bonding wires and the work hardening of free air balls, it has the effect of increasing the recrystallization temperature and lowering the loop height of the gold alloy wire, so it is added as necessary. If these components are less than 1 ppm, the predetermined effect cannot be obtained. On the other hand, if the content of Sr, Eu, La, Y exceeds 200 ppm, a large amount of oxide is generated on the surface of the free air ball, and free air A large shrinkage cavity that cannot contribute to bonding is formed in the center of the bottom of the ball, so that the reliability of bonding decreases, the work hardening of the ball increases, and an Al pad is used for ball bonding. Undesirably causing damage thereunder. Therefore, the contents of Sr, Eu, La, and Y are set to 1 to 200 ppm.

Ｃａ、Ｂｅ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計：
ＰｔおよびＰｄのうちの１種または２種を合計で２０００ｐｐｍ〜２質量％、Ａｇ：２０００ｐｐｍ〜５質量％、Ｉｒ：１〜２００ｐｐｍを含有するボンディングワイヤ用金合金線において、Ｃａ、Ｂｅ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計を２００ｐｐｍ以下に定めたのは、Ｃａ、Ｂｅ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計が２００ｐｐｍを越えるようになるとフリーエアボールの表面に多量の酸化物が生成し、さらにフリーエアボールの底部中央に接合に寄与できない大きな引け巣が形成されるので接合信頼性が低下し、さらにボールの加工硬化性が高くなりすぎてボールボンディングの際にＡｌパッドとその下部に損傷を生じるようになるので好ましくないからである。 Total of Ca, Be, Sr, Eu, La, Y:
In a gold alloy wire for bonding wire containing one or two of Pt and Pd in a total of 2000 ppm to 2% by mass, Ag: 2000 ppm to 5% by mass, and Ir: 1 to 200 ppm, Ca, Be, Sr, The total of Eu, La, and Y is set to 200 ppm or less because when the total of Ca, Be, Sr, Eu, La, and Y exceeds 200 ppm, a large amount of oxide is generated on the surface of the free air ball. In addition, a large shrinkage cavity that cannot contribute to bonding is formed in the center of the bottom of the free air ball, so that the reliability of bonding decreases, and the work hardenability of the ball becomes too high, causing damage to the Al pad and its lower part during ball bonding. This is because it is not preferable.

上述のように、この発明のボンディングワイヤ用金合金線は、接合信頼性、圧着ボールの真円性に優れ、さらにＡｌパッドとその下部に損傷を生じることがなく、特に耐樹脂流れ性が一層優れているので、この金合金線を使用してボンディングワイヤとして長いループを形成しても樹脂流れが少なく、半導体装置の歩留を向上させることができるなど産業上すぐれた効果をもたらすものである。   As described above, the gold alloy wire for bonding wire according to the present invention has excellent bonding reliability and roundness of the press-bonded ball. Further, the Al pad and the lower portion thereof are not damaged, and particularly the resin flow resistance is further improved. Since it is excellent, even if a long loop is formed as a bonding wire using this gold alloy wire, the resin flow is small, and the yield of semiconductor devices can be improved. .

表１〜３に示される成分組成を有する金合金の鋳塊を圧延し、伸線加工を行ない、必要に応じて中間焼鈍も行うことにより線径：１９μｍを有する金合金線を作製し、この金合金線を破断伸び率が３〜５％になるように焼鈍することにより本発明ボンディングワイヤ用金合金線（以下、本発明ワイヤという）１〜４２、比較ボンディングワイヤ用金合金線（以下、比較ワイヤという）１〜１７および従来ボンディングワイヤ用金合金線（以下、従来ワイヤという）１を製造し、半径：２５ｍｍの中間スプールに巻き取った。中間スプールに巻き取られたワイヤをさらに半径：２５ｍｍのスプールに２０００ｍ巻取り、これらワイヤの先端１５ｍを捨てた。 A gold alloy wire having a wire diameter of 19 μm is produced by rolling a gold alloy ingot having the composition shown in Tables 1 to 3, performing wire drawing, and performing intermediate annealing as necessary. By annealing the gold alloy wire so that the breaking elongation is 3 to 5%, the gold alloy wire for the bonding wire of the present invention (hereinafter referred to as the present invention wire) 1 to 42, the gold alloy wire for the comparative bonding wire (hereinafter referred to as the gold alloy wire) 1 to 17 and a gold alloy wire for conventional bonding wires (hereinafter referred to as conventional wire) 1 were manufactured and wound on an intermediate spool having a radius of 25 mm. The wire wound on the intermediate spool was further wound up to 2000 m on a spool having a radius of 25 mm, and the tip 15 m of these wires was discarded.

これら表１〜３に示される成分組成を有する本発明ワイヤ１〜４２、比較ワイヤ１〜１７および従来ワイヤ１をＫｕｌｉｃｋｅ＆Ｓｏｆｆａ製のワイヤボンダー（マクサムプラス）にセットし、半導体ＩＣチップが搭載された基板に、
加熱温度：１６０℃、
ループ長さ：４．２ｍｍ、
ループ高さ：２００μｍ、
圧着ボール径：４０μｍ、
圧着ボール高さ：９μｍ、
の条件でボンディングを行って、下記の測定を行うことによりＡｌパッドとその下部の非損傷性および圧着ボールの真円性についての評価を行った。
ループは台形ループと呼ばれる圧着ボール直上ならびに２ｎｄボンド側近傍に曲がり（キンク）を有する形状を採用した。 A substrate on which a semiconductor IC chip is mounted by setting the wire 1 to 42 of the present invention having the composition shown in Tables 1 to 3, the comparative wires 1 to 17 and the conventional wire 1 to a wire bonder (Maxam Plus) made by Kullike & Soffa In addition,
Heating temperature: 160 ° C
Loop length: 4.2 mm,
Loop height: 200 μm,
Pressure ball diameter: 40 μm,
Crimp ball height: 9μm
Bonding was performed under the conditions described above, and the following measurements were performed to evaluate the non-damage of the Al pad and its lower part and the roundness of the press-bonded ball.
The loop has a shape having a bend (kink) immediately above the press-bonded ball called a trapezoidal loop and in the vicinity of the 2nd bond side.

Ａｌパッドとその下部の非損傷性
各サンプルにつき１００個のファーストボンド部の圧着ボールをデイジ社製ボンドテスター（ＰＣ２４００）を用いてシェアすることにより取り除き、シェア後のＡｌパッド部（Ａｌパッドとその下）を観察してＡｌパッドとその下の損傷の有無を調べ、損傷のあるＡｌパッドの数を数え、その結果を表４〜５に示してＡｌパッドとその下部の非損傷性を評価した。 Non-damage of Al pad and its lower part 100 crimp balls of each first bond part for each sample are removed by sharing using a bond tester (PC2400) manufactured by Daiji, and the Al pad part after sharing (Al pad and its The bottom) was observed for the presence or absence of damage to the Al pad, the number of damaged Al pads was counted, and the results were shown in Tables 4 to 5 to evaluate the non-damage of the Al pad and its lower part. .

圧着ボールの真円性評価：
各サンプルにつき１００個の圧着ボールを観察し、比較サンプル対比で評価した。すなわち、圧着ボールの外周に凹凸が存在しない圧着ボールを真円性が高いと判定し、圧着ボールの外周に明らかに凹凸が存在する圧着ボールを真円性が低いと判定し、外周に明らかに凹凸が存在する真円性が低い圧着ボール（不良ボール）の数をカウントし、その結果を表４〜５に示すことにより圧着ボールの真円性を評価した。 Evaluation of roundness of crimped ball:
100 pressure-bonded balls were observed for each sample and evaluated by comparison with comparative samples. In other words, it is determined that a pressure-bonded ball having no unevenness on the outer periphery of the pressure-bonded ball has a high roundness, and a pressure-bonded ball having an unevenness on the outer periphery of the pressure-bonded ball is determined to have a low roundness, and clearly The number of press-bonded balls (defect balls) having unevenness and low roundness was counted, and the roundness of the press-bonded balls was evaluated by showing the results in Tables 4 to 5.

耐樹脂流れ性：
ボンディングしたＳｉチップが搭載された基板を、モールディング装置を用いてエポキシ樹脂で封止した後、軟Ｘ線非破壊検査装置を用いて樹脂封止した半導体チップ内部をＸ線投影し、ワイヤ流れが最大の部分の流れ量を２０本測定し、その平均値をループ長さで除算した値（％）を樹脂流れと定義し、この樹脂流れを測定し、その結果を表４〜５に示すことにより耐樹脂流れ性を評価した。 Resin flow resistance:
After the substrate on which the bonded Si chip is mounted is sealed with an epoxy resin using a molding device, the inside of the semiconductor chip sealed with a soft X-ray non-destructive inspection device is X-ray projected, and the wire flow is Measure the maximum 20 parts flow rate, define the average value divided by the loop length (%) as the resin flow, measure this resin flow, and show the results in Tables 4-5 The resin flow resistance was evaluated.

接合信頼性評価：
ボンディングしたサンプルを樹脂で封止せず、１７５℃の空気中で１０００時間保管した後に、デイジ社製ボンドテスター（ＰＣ２４００）を用いて圧着ボール直上のループの曲がり(ファーストボンド側直上のキンク)にツールを引っかけてプル試験(各サンプルにつき１００個)を行った。プル試験での破断は、接合性が良好な場合はネックで破断するが、接合部が劣化し、接合強度が低下した場合は圧着ボールとＡｌパッドの接合界面で破断(ボールリフト)する。そのボールリフト数をカウントし、その結果を表４〜５に示して接合信頼性を評価した。 Bonding reliability evaluation:
After the bonded sample is not sealed with resin and stored in air at 175 ° C. for 1000 hours, a tool is used to bend the loop just above the press-bonded ball (kink just above the first bond side) using a Daisy bond tester (PC2400). The pull test (100 pieces for each sample) was conducted. The break in the pull test breaks at the neck when the bondability is good, but breaks (ball lift) at the bonding interface between the press-bonded ball and the Al pad when the bonded portion deteriorates and the bonding strength decreases. The number of ball lifts was counted, and the results were shown in Tables 4 to 5 to evaluate the joining reliability.

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表１〜５に示される結果から、本発明ワイヤ１〜４２は、従来ワイヤ１と比較すると、耐Ａｌパッド損傷性、圧着ボールの真円性および接合信頼性が共に優れているが、本発明ワイヤ１〜４２は従来ワイヤ１に比べて特に耐樹脂流れ性が良好であることなどがわかる。しかし、この発明の条件から外れた成分組成を有する比較ワイヤ１〜１７は、耐Ａｌパッド損傷性、圧着ボールの真円性、耐樹脂流れ性および接合信頼性の少なくともいずれか一つは不良となることが分かる。 From the results shown in Tables 1 to 5, the present invention wires 1 to 42 are superior in resistance to Al pad damage, roundness of the press-bonded ball and bonding reliability as compared with the conventional wire 1, but the present invention It can be seen that the wires 1 to 42 have particularly good resin flow resistance compared to the conventional wire 1. However, Comparative Wires 1 to 17 having a component composition that deviates from the conditions of the present invention have at least one of Al pad damage resistance, roundness of the press-bonded ball, resin flow resistance, and bonding reliability. I understand that

従来のボンディングワイヤ用金合金線の使用状態を説明するための平面説明図であるIt is plane explanatory drawing for demonstrating the use condition of the conventional gold alloy wire for bonding wires. 一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線を必要とする理由を説明するための平面説明図であるIt is a plane explanatory view for explaining the reason for requiring a gold alloy wire for bonding wire having higher resin flow resistance.

符号の説明Explanation of symbols

１：Ａｌパッド、２、２１、２２：外部端子、３、３１、３２：ボンディングワイヤ用金合金線、４：Ｓｉチップ、 1: Al pad, 2, 21, 22: External terminal, 3, 31, 32: Gold alloy wire for bonding wire, 4: Si chip,

Claims (4)

ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
を含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線。 One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
And the remainder has a component composition consisting of Au and inevitable impurities, and has high bonding reliability and high roundness of the press-bonded ball, and the Al pad and its lower part are less likely to be damaged and higher. Gold alloy wire for bonding wire with resin flow resistance. ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｂｅ：１〜５０ｐｐｍ、
をＣａとＢｅの合計が２００ｐｐｍ以下になるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線。 One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
Be: 1 to 50 ppm,
Having a high bonding reliability and a high roundness of the press-bonded ball, characterized in that the total content of Ca and Be is 200 ppm or less, and the remainder has a component composition consisting of Au and inevitable impurities, A gold alloy wire for bonding wire that is hard to damage the Al pad and its lower part and has higher resin flow resistance. ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｓｒ、Ｅｕ、ＬａおよびＹの内の１種または２種以上：１〜２００ｐｐｍ、
をＣａ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計が２００ｐｐｍ以下となるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線。 One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
One or more of Sr, Eu, La and Y: 1 to 200 ppm,
In which the total of Ca, Sr, Eu, La, and Y is 200 ppm or less, and the remainder has a component composition composed of Au and inevitable impurities, and high roundness of the press-bonded ball and high bonding reliability A gold alloy wire for bonding wire that has a high resistance, and that the Al pad and its lower part are less likely to be damaged and has higher resin flow resistance. ＰｔおよびＰｄの内の１種または２種を合計で２０００ｐｐｍ〜２質量％、
Ａｇ：２０００ｐｐｍ〜５質量％、
Ｉｒ：１〜２００ｐｐｍ、
Ｃａ：２〜２００ｐｐｍ、
Ｂｅ：１〜５０ｐｐｍ、
Ｓｒ、Ｅｕ、ＬａおよびＹの内の１種または２種以上：１〜２００ｐｐｍ、
をＣａ、Ｂｅ、Ｓｒ、Ｅｕ、Ｌａ、Ｙの合計が２００ｐｐｍ以下となるように含有し、残りがＡｕおよび不可避不純物からなる成分組成を有することを特徴とする高い接合信頼性および圧着ボールの高い真円性を有し、さらにＡｌパッドとその下部が損傷しにくくかつ一層高い耐樹脂流れ性を有するボンディングワイヤ用金合金線。 One or two of Pt and Pd in total 2000 ppm to 2% by mass,
Ag: 2000 ppm to 5 mass%,
Ir: 1 to 200 ppm,
Ca: 2 to 200 ppm,
Be: 1 to 50 ppm,
One or more of Sr, Eu, La and Y: 1 to 200 ppm,
In which the total of Ca, Be, Sr, Eu, La, and Y is 200 ppm or less, and the remainder has a component composition consisting of Au and inevitable impurities, and high bonding reliability and high pressure-bonded balls Gold alloy wire for bonding wire that has roundness, Al pad and its lower part are not easily damaged, and has higher resin flow resistance.
JP2007088090A 2007-03-29 2007-03-29 GOLD ALLOY WIRE FOR BONDING WIRE HAVING HIGH JUNCTION RELIABILITY AND HIGH CIRCULARITY OF COMPRESSION BONDING BALL, PREVENTING EASY DAMAGE OF Al PAD AND ITS LOWER PORTION, AND HAVING STILL HIGHER RESIN FLOW PERFORMANCE Withdrawn JP2008251635A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103155130A (en) * 2011-02-10 2013-06-12 田中电子工业株式会社 Ag-au-pd ternary alloy-based bonding wire
CN105308731A (en) * 2013-06-20 2016-02-03 住友电木株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103155130A (en) * 2011-02-10 2013-06-12 田中电子工业株式会社 Ag-au-pd ternary alloy-based bonding wire
CN105308731A (en) * 2013-06-20 2016-02-03 住友电木株式会社 Semiconductor device
CN105308731B (en) * 2013-06-20 2019-04-30 住友电木株式会社 Semiconductor device

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