JP3527356B2 - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP3527356B2
JP3527356B2 JP08289096A JP8289096A JP3527356B2 JP 3527356 B2 JP3527356 B2 JP 3527356B2 JP 08289096 A JP08289096 A JP 08289096A JP 8289096 A JP8289096 A JP 8289096A JP 3527356 B2 JP3527356 B2 JP 3527356B2
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Prior art keywords
silver
copper
wire
semiconductor
electrode
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JP08289096A
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JPH09275120A (en
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智裕 宇野
宏平 巽
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新日本製鐵株式会社
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Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which an electrode on a semiconductor element and a terminal for establishing electrical connection to the outside are electrically connected by a fine metal wire or a bump (a metal projection). .

[0002]

2. Description of the Related Art At present, a thin metal wire called a bonding wire is mainly used as a connection for obtaining electrical conduction between an electrode on a semiconductor element and an external lead. This is a method in which the tip of the thin metal wire is formed into a ball shape by arc discharge, the ball is pressure-bonded to the electrode of the semiconductor element, and then the thin wire is ultrasonically connected to the external terminal side. Usually, the semiconductor element is mounted on a lead frame or a circuit board. Currently, gold or gold alloys are the mainstream as the material for the thin wires.

Due to the demand for semiconductor mounting due to the miniaturization and thinning of IC chips, the adoption of the wireless bonding system is advancing. In the TAB (Tape Automated Bonding) method, a polyimide resin tape and a copper foil circuit adhered on the polyimide resin tape are formed, and the lead portion of the TAB and the electrode portion of the IC chip are joined via metal protrusions called bumps. To be done. As the bump, a gold bump formed on the electrode portion of the LSI chip by a plating method is mainly used. Further, in the flip-chip method, an LSI chip is connected face down to a circuit board. Also in this method, connection via bumps is the mainstream in the electrode portion.

A stud bump method has been proposed in which bumps are formed by a gold alloy fine wire whose reliability has been confirmed in the wire method. This is to form bumps by forcibly pulling the wire upward and breaking at the neck part after the ball part formed at the tip of the thin gold wire is bonded to the electrode pad, similar to normal wire bonding. Is.

Due to the recent high integration of semiconductor elements, the practical use of circuit wiring in the region of half micron or less has been pointed out that aluminum and aluminum alloy, which are conventional wiring materials, have limitations. Since the current density increases due to the ultra-fine structure, defects such as disconnection due to electromigration or stress migration are regarded as a problem. As a substitute material, circuit wiring made of copper or copper alloy is considered to be promising, but it has not been put to practical use, and confirmation of productivity and reliability at mass production level is progressing.

[0006] In joining with an aluminum electrode using a fine gold wire, deterioration of long-term reliability of the joining portion under a high temperature environment is regarded as a problem. As the gold / aluminum intermetallic compound grows at the bonding interface, the bonding strength decreases due to the occurrence of voids, or the compound causes a corrosion reaction due to the flame-retardant component in the encapsulating resin, which increases electrical resistance. Can be a problem.

Regarding the mounting by wire bonding to the electrode portion of the copper wiring, there are almost no reports of evaluation including reliability evaluation at the mass production level. When connecting a copper wiring to an electrode portion, there is a concern that an oxide film on the surface of the copper electrode and contamination or residues due to etching in the circuit wiring process may adversely affect the bonding.

Ultrasonic vibration is applied to the joining of the gold thin wire to the conventional aluminum electrode to promote the destruction of the aluminum oxide film or the like. In high-purity gold, which is the current mainstream material for fine wires, the ball portion is soft, so the ball deformation easily progresses during bonding, and it is difficult to destroy the oxide film when the oxide film is thick. Therefore, in order to increase the hardness of the ball portion, there is a method of alloying by adding an element to gold, but there is a concern that the sphericity of the ball may be reduced and the electrical resistance of the thin wire may be increased.

As fine wires and bump materials used for mounting on copper or copper alloy electrodes, materials having lower cost and higher performance and reliability than gold are desired.

[0010]

With regard to wire bonding to the electrode portion of copper or copper alloy circuit wiring, the development of materials for improving bondability and ensuring long-term bond reliability is a major issue.

Therefore, according to the present invention, in the connection fine wire or bump for obtaining electrical continuity with the electrode portion of the circuit wiring of copper or copper alloy formed on the semiconductor element, good bondability with the copper wiring is ensured. An object of the present invention is to provide a semiconductor device which is inexpensive and uses a connection material having excellent electrical conductivity.

[0012]

As a material having a low material cost as an alternative to the fine gold wire, copper, which is the same material as the circuit wiring, and aluminum, which is still used in some semiconductor devices such as ceramic packages, are used. Although considered, both of them have been found to be difficult to obtain a good ball with high sphericity because they are easily oxidized when arc discharge at the tip of a thin wire is performed in the atmosphere. When the ball is formed with an inert gas flowing, the oxidation can be suppressed to some extent, but the running cost becomes high, and there are many practical problems in consideration of safety management. Further, the copper balls are hardened even if the oxidation is suppressed, so that there is a problem of damage to the semiconductor element at the time of bonding, and in aluminum, there is concern that the reliability may be deteriorated due to the growth of the compound layer at the bonding interface.

The inventors of the present invention have found that silver is effective as a material for fine wires as a result of a study focusing on the bondability and reliability with the electrode portion of the circuit wiring of copper or copper alloy.
Even if a ball is formed in the air, silver can easily form a good spherical ball and has a higher electric conductivity than gold. Further, the inventors of the present invention have compared the case where the wiring on the semiconductor element is the current aluminum, and as a result, when the joint between the silver fine wire and the aluminum electrode is exposed to a high temperature environment, the phenomenon that the joint strength is significantly reduced is found. I'm confirming. That is, it was found that the silver fine wire and the copper electrode must be joined in order to secure high reliability.

Also, good reliability was recognized in the joining of silver stud bumps formed on copper electrodes using a silver fine wire. Furthermore, in order to improve the bondability with the copper electrode and to suppress the wire deformation during resin sealing, 0.005 to 0.005 of at least one of Pt, Pd and Cu is contained in the thin silver wire.
It has been found to be effective to contain it in the range of 7% by weight.

That is, the present invention is based on the above findings, and is a semiconductor device that realizes high junction reliability.
The following is the summary. (1) The electrode portion of the circuit wiring of copper or copper alloy formed on the semiconductor element and the terminal of the wiring portion or the lead frame of the circuit board on which the element is mounted have a purity of 99.9.
A semiconductor device characterized in that it is electrically connected by a fine wire or a stud bump made of silver of not less than wt%. (2) Pt, Pd, and a terminal of a wiring part of a circuit board on which the element is mounted and a lead frame or a wiring part of a circuit wiring of copper or a copper alloy formed on the semiconductor element,
At least one Cu contained in the range of 0.005 to 7 wt%, and wherein a use of silver alloy thin wire or a silver alloy stud bump formed of the remainder of silver and silver unavoidable impurities.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION The structure of the present invention relating to a semiconductor device will be further described below. When joining gold wires / copper electrodes, the gold balls are more easily deformed, and the oxide film on the copper surface
Can be difficult to destroy. This is a physical property value that is a standard for estimating elastic deformation and plastic deformation. When the elastic modulus E and the rigidity modulus G are compared, it is 1 for copper.
2.98 × 10 10 Pa (Pascal), 4.83 × 10 10
Pa is 7.80 × 10 10 Pa for gold,
The low value of 2.70 × 10 10 Pa also suggests that gold may be deformed first. On the other hand, E and G of silver are 8.27 × 10 10 Pa and 3.03 × 10 10 Pa, which are about 10% higher than those of gold. Furthermore, the inventors of the present invention conducted a compression test of the silver ball portion, and silver was compared with gold in an amount of 3
It has been confirmed that the deformation resistance is high, even if it is relatively high. this is,
In silver, it is considered that the ball portion becomes hard and the bondability is improved due to the fact that oxidation proceeds a little during melting of the ball in the atmosphere. However, the sphericity is maintained rather than the oxidation that adversely affects the ball shape. Further, irregularities associated with the solidified structure may be observed on the surface depending on the discharge conditions, and it is considered that the surface may have an effective function for obtaining good bonding due to the destruction of the oxide film and the exposure of the new copper surface.

Conventionally, it has been pointed out that the gold / aluminum joint has a decrease in reliability due to the formation of voids associated with the formation of intermetallic compounds. In addition, according to the study by the present inventors, the silver / aluminum joint has a metal. It is also observed that the bond strength is remarkably reduced due to the formation of the intermetallic compound, and that peeling occurs at the interface with the silicon substrate only by heating. It was found that when a silver ball part was selected as the joining partner of the copper electrode, no decrease in strength was observed in the heating test, and long-term reliability was secured. As can be inferred from the binary phase diagram, the compound does not exist in terms of thermal equilibrium in the silver / copper system, so that the interdiffusion of silver and copper proceeds when it is held at high temperature, but at the interface Only the silver / copper diffusion layer is formed, and no reduction in strength is observed.

In a normal semiconductor device, a semiconductor element is mounted on a lead frame, a TAB tape, a circuit board (generally referred to as an external board) and used for external connection, and these external terminals and A thin silver wire is used to obtain an electrical connection with copper or copper alloy circuit wiring on a semiconductor device. Here, the reason why the purity of the silver fine wire is 99.9% by weight or more is that it is industrially available and has electrical conductivity, and that the impurities contained in silver are bonded. It is based on the reason that there are things that adversely affect sexuality.

If the oxide film on the copper surface is formed thick,
When copper is alloyed and the hardness of the thin film is high, it may be difficult to secure sufficient bondability with a high-purity silver ball, and at least one of Pt, Pd, and Cu contained in silver is difficult to secure.
It was confirmed that the bondability was improved by containing the seed in the range of 0.005 to 7% by weight. This is because the high-purity silver is still smaller than copper even if the elastic properties and the rigidity, which are the physical properties described above, are observed. Therefore, the inclusion of Pt, Pd, and Cu enhances the mechanical properties and improves the copper electrode. To improve the bondability of. Here, the content is defined as the above range because if it is less than 0.005% by weight, the effect of improving the bondability is small, and if it exceeds 7% by weight, the sphericity at the time of ball formation is reduced and the shape is improved. Is based on the reason that a flat one occurs. More preferably, Pt,
By setting the contents of Pd and Cu in the range of 0.010 to 7% by weight, higher joining reliability can be obtained. This is because if the content is 0.010% by weight or more, a higher effect can be obtained in promoting the growth of the Ag / Cu diffusion layer in the joint portion.

Further, in bump connection used for mounting TAB tape, flip chip, etc., since the semiconductor element and the wiring part of the substrate are connected only via bump parts of several tens of μm, resin and silicon are used. External stress is easily applied due to differences in thermal expansion due to differences in materials such as metal. It can be said that the allowable range for the external force at the bump joint is narrower than that at the joint for wire connection. That is, in the bump connection, higher reliability of the joint portion is required, and the joint of the silver bump and the copper electrode is desirable as a joint combination.

As described above, a compound that adversely affects the reliability is not formed in the silver / copper bonding, and the silver / copper diffusion layer formed at the bonding interface at the high temperature holding causes
The joint strength tends to increase rather. There is no growth of intermetallic compounds and the diffusion layer of silver / copper formed at the interface allows
The joint strength tends to increase rather.

Here, for the reasons described above, the purity is 99.9.
By forming a stud bump on a copper electrode by using a silver fine wire of not less than wt% or a silver alloy fine wire containing at least one kind of Pt, Pd, and Cu in the range of 0.005 to 7 wt%, It is possible to provide a reliable semiconductor device.

[0023]

EXAMPLES Examples will be described below. Electrolytic silver having a silver purity of about 99.9% by weight or more and a predetermined amount of a mother alloy of each additive element are added for alloying, and the silver alloy having the chemical composition shown in Table 1 is put in a high frequency vacuum melting furnace. Melted and cast. After rolling the ingot, wire drawing is performed at room temperature, and the final wire diameter is 2
After forming a silver alloy thin wire having a thickness of 5 μm, it was continuously annealed in the atmosphere and adjusted so that the elongation value became about 4%. With respect to the obtained silver fine wire, the ball shape, the wire flow after sealing, and the changes in the bonding strength at the initial bonding and after the heating were examined, and the results are also shown in Table 1.

Using a commercially available high-speed automatic bonder, the silver alloy ball produced at the tip of the wire by arc discharge was observed with a scanning electron microscope. It was confirmed that the ball had an abnormal shape and that a contraction hole was generated at the ball tip. Marked with a mark that does not allow good bonding to the electrodes on the semiconductor element,
Good ball formation is indicated by a circle. For the evaluation of the bonding strength, a silver ball portion was ultrasonically bonded to a copper electrode formed on a semiconductor element, the shear breaking strength was measured by translating a jig 3 μm above the copper electrode and reading the shear rupture strength. The average value of the breaking load of the book was measured. Further, a semiconductor device in which a silver ball was bonded to a copper electrode was heat-treated in nitrogen gas at 200 ° C. for 200 hours in a state where the semiconductor device was not resin-sealed, and a change in bonding strength was measured by an average value of 50 shear tests.

Regarding the measurement of the wire flow after resin encapsulation, after the lead frame on which the semiconductor element bonded so as to obtain a wire span of 4.0 mm is mounted is encapsulated with an epoxy resin using a molding device, X-ray projection of the inside of a semiconductor element sealed with a resin using a soft X-ray non-destructive inspection device, and the flow amount of the maximum wire flow portion is set to 80 by the same procedure as the wire bending described above.
A value (percentage) obtained by performing the actual measurement and dividing the average value by the span length of the wire was defined as the wire flow after sealing. Also,
For the bump formation, the high-speed automatic bonder is used to bond the silver balls on the silicon chip on the high-purity aluminum electrode film with a thickness of 1 μm by the thermocompression bonding method using ultrasonic waves in the same manner as the wire bonding. After that, the wire was forcibly pulled upward to break the wire at the neck.

In Table 1, Example 1 is a thin silver wire according to the invention described in claim 1, Example 15 is related to the silver bump described in claim 1, and Examples 2 to 14 are described in claim 2. The thin silver wire according to the present invention, and Examples 16 and 17 are results of bump bonding according to claim 2. Here, regarding the bump bonding, the wire flow was not measured.

The shear strength of Examples 1 and 15 as a result of high-purity silver is 40 gf or more, which is 5 gf or more higher than that of Comparative Example 1 which is the result when a thin gold wire is bonded to a copper electrode, After that, the share strength was rising. In order to compare the bonding of silver / aluminum, Comparative Example 9 shows the result when aluminum was used as the electrode material on the semiconductor element and a high-purity silver wire was bonded on the aluminum electrode. Although sufficient strength was obtained, it was confirmed that the shear strength remarkably decreases when heated.

At least one of Pt, Pd, and Cu is added to 0.
In Examples 2 to 14 containing 005 to 7% by weight, a shear strength of 50 gf or more was secured, and good bondability was confirmed. Among them, the content is 0.010
In Examples 2, 5 and 10 in which the range is less than wt%, the shear strength is 60 gf or less although it increases after heating.
In the other Examples, heating increased about 10 gf, and it was confirmed that the reliability was further improved.
Further, in Comparative Examples 4 to 8 in which the content was 7% by weight or more, shrinkage cavities were observed at the tip of the ball.

The lower limit of the content of claim 3 is 0.00
In Comparative Examples 2 and 3 in which the content was less than 5% by weight, the bondability comparable to that of Example 1 of pure silver was secured, but it was 50 gf or less, and the effect of adding Pt, Pd, Cu was utilized. Must be contained in an amount of 0.005% by weight or more.

[0030]

[Table 1]

[0031]

As described above, a semiconductor having a high bonding reliability is obtained by bonding a fine wire or bump of pure silver or a silver alloy according to the present invention onto a copper or copper alloy electrode portion. A device can be provided.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 identification code FI // H01L 21/60 H01L 21/92 603A 604J (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/60

Claims (2)

(57) [Claims]
1. A purity of 99.9% by weight of an electrode portion of a circuit wiring of copper or copper alloy formed on a semiconductor element and a terminal of a wiring portion of a circuit board on which the element is mounted or a lead frame. A semiconductor device characterized by being electrically connected by the fine wire or stud bump made of silver.
2. Pt, Pd in an electrical connection between a terminal of a circuit wiring of copper or copper alloy formed on a semiconductor element and a wiring portion of a circuit board on which the element is mounted or a lead frame and a terminal. , Cu of at least one.
A semiconductor device comprising a silver alloy fine wire or a silver alloy stud bump, which is contained in the range of 005 to 7% by weight and the balance is silver and unavoidable impurities of silver.
JP08289096A 1996-04-04 1996-04-04 Semiconductor device Expired - Fee Related JP3527356B2 (en)

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JP2007142271A (en) * 2005-11-21 2007-06-07 Tanaka Electronics Ind Co Ltd Bump material and bonding structure
DE102006006728A1 (en) * 2006-02-13 2007-08-23 W.C. Heraeus Gmbh Bonding wire
JP2008166314A (en) * 2006-12-26 2008-07-17 Sumitomo Bakelite Co Ltd Semiconductor device and epoxy resin composition for sealing
TW201028240A (en) * 2009-01-23 2010-08-01 jun-de Li Composite bonding wire manufacturing method and product thereof
US8101123B2 (en) * 2009-03-23 2012-01-24 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
US20120093681A1 (en) * 2009-03-23 2012-04-19 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
JP4771562B1 (en) 2011-02-10 2011-09-14 田中電子工業株式会社 Ag-Au-Pd ternary alloy bonding wire
WO2013129253A1 (en) * 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 Power semiconductor device, method for manufacturing same, and bonding wire
TWI395313B (en) * 2012-11-07 2013-05-01 Wire technology co ltd Stud bump structure and method for forming the same
KR101334282B1 (en) * 2013-02-12 2013-11-28 엠케이전자 주식회사 Ag-based wire for semiconductor package and semiconductor package having the same
TWI538762B (en) * 2014-01-03 2016-06-21 樂金股份有限公司 Stud bump and package structure thereof and method of forming the same
JP5590260B1 (en) * 2014-02-04 2014-09-17 千住金属工業株式会社 Ag ball, Ag core ball, flux coated Ag ball, flux coated Ag core ball, solder joint, foam solder, solder paste, Ag paste and Ag core paste

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