CN105470228A - Insulating coating anti-corrosion alloy bonding wire and preparation method therefor - Google Patents

Insulating coating anti-corrosion alloy bonding wire and preparation method therefor Download PDF

Info

Publication number
CN105470228A
CN105470228A CN201510879257.3A CN201510879257A CN105470228A CN 105470228 A CN105470228 A CN 105470228A CN 201510879257 A CN201510879257 A CN 201510879257A CN 105470228 A CN105470228 A CN 105470228A
Authority
CN
China
Prior art keywords
alloy
wire
bonding wire
metal
insulating coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510879257.3A
Other languages
Chinese (zh)
Other versions
CN105470228B (en
Inventor
林良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yantai Yinuo Semiconductor Materials Co Ltd
Original Assignee
Yantai Yinuo Semiconductor Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yantai Yinuo Semiconductor Materials Co Ltd filed Critical Yantai Yinuo Semiconductor Materials Co Ltd
Priority to CN201510879257.3A priority Critical patent/CN105470228B/en
Publication of CN105470228A publication Critical patent/CN105470228A/en
Application granted granted Critical
Publication of CN105470228B publication Critical patent/CN105470228B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/745—Apparatus for manufacturing wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
    • H01B7/2806—Protection against damage caused by corrosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/45691—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Wire Bonding (AREA)

Abstract

The invention discloses an insulating coating anti-corrosion alloy bonding wire and a preparation method therefor. The bonding wire consists of an internal alloy bonding wire and an external insulating anti-corrosion high-molecular coating layer. A metal substrate of the alloy bonding wire contains gold, silver, copper and aluminium, and other metal used for the alloy comprises gold, silver, copper, aluminium, platinum, palladium, ruthenium, rhodium, osmium, iridium and all rare earth elements. An insulating coating anti-corrosion material is thermoplastic polyimide resin. A coating material is used for isolating the metal with an external environment, thereby improving the bonding reliability. Meanwhile, a bonding doping mode is used, thereby reducing the diffusion speed of atoms between the bonding wire and the substrate after welding, improving the brittleness ineffectiveness caused by an IMC (intermetallic compound), and further improving the reliability of the bonding wire.

Description

A kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof
Technical field
The present invention relates to a kind of alloy bonding silk be mainly used in microelectronics Packaging operation, be specifically related to a kind of insulating coating corrosion-resisant alloy bonding wire.The invention still further relates to the preparation method of described insulating coating corrosion-resisant alloy bonding wire.
Background technology
Along with the develop rapidly of modern industrial technology, electronic product is more and more to portable, miniaturized, networking and multimedization future development.Packaging process is also more and more higher for the requirement of bonding wire product, and just towards the future development of many pins, Small Distance and multiple row multi-laminate, wire bonding faces increasing challenge.In order to realize higher packaging density in less encapsulation volume, realizing multi-functional gatheringization, needing to reduce lead spacing, increase number of leads, reducing loop height.Simultaneously, in some accurate devices or under the condition of work under bad environment, in order to ensure the reliability of device, bonding wire is avoided in use to corrode, due to the spun gold material of the alternative costlinesses such as low-cost filamentary silver, copper wire cannot be used, device cost is caused to remain high.
At present, the method being used for increasing pin bonding density mainly contains and reduces bonding wire diameter and lead spacing, but while wire diameter, spacing reduce, easily cause bonding wire crooked, overlap or the silk that collapses, thus cause shorted devices.For solving the erosion-resisting method in the active metals such as copper mainly at copper wire plated surface palladium, make copper wire material used and air exclusion, but this also causing copper wire cost significantly to rise, it cannot be made to be used widely.Therefore, it is very necessary for inventing a kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof.
In addition, the bonding wire overlay film still not having a kind of applicable industrialization to use at present and solidification special purpose device, adopt conventional impregnation and curing apparatus to there is production efficiency at bonding wire surface-coated polymeric membrane low, and biofilm is uneven etc. is difficult to the technical problem that overcomes.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof, utilizes covering material to completely cut off the contact of metal and external environment, improves the reliability of bonding; Utilize the mode that alloy adulterates simultaneously, reduce bonding wire welds the latter two atoms diffusion velocity with substrate, the brittle failure problem that both improvement intermetallic compound (IMC) causes, improve bonding wire reliability further; Another technical problem to be solved by this invention provides a kind of small investment, production efficiency is high, the uniform bonding wire overlay film of biofilm and solidification special purpose device.
The technical scheme that the existing technical problem of the present invention of solution adopts is as follows:
A kind of insulating coating corrosion-resisant alloy bonding wire, is characterized in that: it is made up of the alloy bonding silk of internal layer coated by high-molecular film layer anticorrosive with outer field insulation; Wherein the metal base of alloy bonding silk comprises gold, silver, copper and aluminium, and other metal for alloy comprises gold, silver, copper, aluminium, platinum, palladium, ruthenium, rhodium, osmium, iridium and rare earth element; Wherein insulating coating corrosion-resistant material is thermoplastic polyimide resin.
The content of described metal base accounts for 85 ~ 99.9wt% of alloy bonding silk; Surplus is described other metal for alloy, surplus Rare Earth Element Contents≤15ppm; The anticorrosive coated by high-molecular film layer thickness that insulate is 0.2 ~ 0.8 μm.
Surplus Rare Earth Element Contents is preferably 3 ~ 15ppm.
Gold content as other metal for alloy is 9%, and the palladium content as other metal for alloy is 3%, and the cerium content as other metal for alloy is 5ppm, and surplus is the silver as alloy base material.
Silver content as other metal for alloy is 0.5%, and surplus is the copper as alloy base material.
The preparation method of described insulation coating corrosion-resisant alloy bonding wire, is characterized in that comprising the following steps:
1), the selection of alloy base material or purification: select high-purity substrate metal of more than 99.999%; Or utilize purifying technique, make the purity of substrate metal reach more than 99.999%;
2), founding: mixed with required alloy by high-purity substrate metal, through prealloy, foundry alloy and continuous drawing casting technique, founding becomes alloying metal rod;
3), wire drawing: alloying metal rod is pulled into by wire drawing machine the silk thread requiring wire diameter;
4), anneal;
5), overlay film and solidification: flood plated film on the surface of alloy bonding silk by level, covering is insulated clad material, and carries out UV solidification process.
Wherein step 2) in founding: according to Alloy constituent percentages, at 1000 DEG C ~ 1600 DEG C, utilize N 2blow and stir protection and carry out prealloy, foundry alloy, at 1000 ~ 1300 DEG C, carry out continuous drawing casting technique, founding becomes to meet diametric requirements alloying metal rod.
Wherein in step 3) wire drawing, arrange the semi-finished product annealing of B alloy wire at 0.26mm place, annealing temperature is 350-450 DEG C, to reduce the lattice defect in semi-finished product B alloy wire, and improves the wire-drawing performance of fine line diameter B alloy wire.
Wherein step the 4) annealing in, the annealing temperature of finished product wire diameter B alloy wire is 350-650 DEG C, and the mechanical performance of adjustment B alloy wire meets the product requirement of corresponding wire diameter.
Wherein in step 5) overlay film and solidification: alloy wire is the level dipping plated film groove of 300 DEG C ~ 350 DEG C by temperature with the speed of 300mm/min ~ 1000mm/min; In level dipping plated film groove, thermoplastic polyimide resin viscosity is 600mPas ~ 1000mPas, and the surface coverage of alloy bonding silk insulate clad material; Then process is cured by UV curing oven at the same rate.
It is characterized in that wherein step 5) adopts following special purpose device to carry out overlay film and solidification: described special purpose device comprises circulating slot and is installed on the level dipping plated film groove for contain liquids insulating coating material within circulating slot, and the upper edge of plated film groove is flooded in the upper edge of circulating slot lower than level; Described special purpose device also comprises the circulation dropper be positioned at above level dipping plated film groove, and circulating slot is connected with described circulation dropper with circulation pipe by circulating pump; Described special purpose device also comprises the UV curing oven be arranged on the right side of circulating slot; Described special purpose device also comprises the actinobacillus device be arranged on the left of circulating slot and the take-up be arranged on the right side of UV curing oven; Bonding wire between actinobacillus device and take-up is successively above the upper port of level dipping plated film groove and the solidification chamber of UV curing oven.
The present invention has the following advantages:
The first, bonding wire adopts alloy mode, improves mechanics and the electric properties such as the hardness of metal, resistivity, blowout current, IMC, the reliability of bonding wire is improved;
The second, skin has insulating coating material, achieves the many wire laying modes utilizing existing bonding wire to realize, and as wire contacts and intersection, line skew, long lead and overlap joint bonding etc., thus breaches the restriction of many existing common key plying design rules; Increase bond densities, be conducive to multi-functional, densification and the miniaturization of electronic product.
Three, compared with preventing the modes such as oxide etch with plating palladium, insulating coating corrosion-resisant alloy bonding wire cost of the present invention is lower, and achieves bonding wire surface insulation erosion-resisting simultaneously, and the scope of application is more extensive.
Four, the present invention's mode of utilizing alloy to adulterate, reduces bonding wire welds the latter two atoms diffusion velocity with substrate,
Thus the brittle failure problem that both solving, intermetallic compound (IMC) causes, further increase bonding wire reliability.
Five, have employed special purpose device when overlay film and solidification, the metallic bond plying of drawing from actinobacillus device is through the coating liquid varnished insulation covering material at upper port edge being raised in level dipping plated film groove, then the solidification chamber entering UV curing oven is cured process, finally be wound on take-up, complete bonding wire overlay film and solidification.Achieve the bonding wire overlay film in easy device and solidification, equipment investment is little, and production efficiency is high, and biofilm is even.
Accompanying drawing explanation
IMC picture after Fig. 1 embodiment of the present invention 1 bonding.
IMC picture after Fig. 2 embodiment of the present invention 2 bonding.
The structure of the special overlay film of Fig. 3 the present invention and solidification equipment and operation principle schematic diagram.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1: a kind of diameter is 25 μm of anticorrosive silver alloy bonding wires of (1.0mil does not comprise insulating coating thickness) insulating coating, each composition by weight percent of material of composition bonding wire is:
Au(gold) consumption is 9%, Pd(palladium) consumption is 3%, Ce(cerium) consumption is 5ppm, surplus is the Ag as alloy base material; Outer layer insulation covering material is thermoplasticity biphenyl polyimide resin.
Its preparation method comprises the following steps:
The first step, selects alloy base material: select to reach more than 99.999% highly purified silver metal raw material;
Second step, founding: according to Alloy constituent percentages, utilizes N at 1600 DEG C 2blow and stir protection and carry out prealloy, foundry alloy, at 1250 DEG C, carry out continuous drawing casting technique, founding becomes diameter to be the silver alloy rod of 8 ± 0.3mm;
3rd step, wire drawing: silver alloy rod is first drawn into by rough equipment the B alloy wire that diameter is 1.55mm, draw equipment to be drawn in passing through again B alloy wire (this wire diameter does 450 DEG C of intermediate annealing process) that diameter is 0.26mm, final utilization is carefully drawn, ultra-fine draw equipment to be drawn into silver alloy wire that diameter is 25 μm;
4th step, annealing: be that the annealing device of 550 DEG C carries out annealing in process to silver alloy wire in temperature, to eliminate the internal stress of alloy wire, makes it not produce distortion, bending, adjustment mechanical performance BL > 10gf, elongation E/L13 ~ 17%;
5th step, overlay film and solidification: silver alloy wire is the level dipping plated film groove of 350 DEG C by temperature with the speed of 800mm/min; In level dipping plated film groove, thermoplasticity biphenyl polyimide resin viscosity is 800-1000mPas, and the surface coverage of alloy bonding silk insulate clad material; Then be cured process by UV curing oven at the same rate, obtain the anticorrosive silver alloy bonding wire of insulating coating that insulating coating thicknesses of layers is 0.5 μm;
6th step, evenly whether the examination and test of products: the light microscope inspection overlay film surface condition by multiplication factor being 250 times, observe, have flawless and impurity; By unwrapping wire and the stress situation of pay-off equipment inspection bonding wire; Whether meet the requirements by the mechanical performance of universal testing machine inspection bonding wire, its requirement is: disruptive force B/L > 10gf, elongation E/L13 ~ 17%;
7th step, prepared by finished product: packed as requested by anticorrosive for the insulating coating be up to the standards silver alloy bonding wire product, scraps warehouse-in after the product of disqualified upon inspection pastes defective label.
Embodiment 2: a kind of diameter is 30 μm of (1.2mil does not comprise insulating coating thickness) insulating coating corrosion protected copper alloy bonding silks, each composition by weight percent of material of composition bonding wire is:
Ag(silver) consumption is 0.5%, surplus is the Cu(copper as alloy base material); Outer layer insulation covering material is the equal benzene polyimide resin of thermoplasticity.
Its preparation method comprises the following steps:
The first step, selects alloy base material: select to reach more than 99.999% highly purified copper raw metal;
Second step, founding: according to Alloy constituent percentages, utilizes N at 1300 DEG C 2blow and stir protection and carry out prealloy, foundry alloy, at 1250 DEG C, carry out continuous drawing casting technique, founding becomes diameter to be the copper alloy metal rod of 8 ± 0.3mm;
3rd step, wire drawing: copper alloy metal rod is first drawn into by rough equipment the B alloy wire that diameter is 1.55mm, then draw equipment to be drawn in passing through B alloy wire that diameter is 0.26mm (this wire diameter makes N 2, H 2ratio is the lower 350 DEG C of intermediate annealing process of the atmosphere protection of 95:5), final utilization is carefully drawn, ultra-fine draw equipment to be drawn into copper alloy wire that diameter is 30 μm;
4th step, annealing: be that the annealing device of 500 DEG C carries out annealing in process to copper alloy wire in temperature, to eliminate the internal stress of alloy wire, make it not produce distortion, bend, adjustment mechanical performance disruptive force B/L > 13gf, elongation E/L14-18%;
5th step, overlay film and solidification: copper alloy wire floods in plated film groove with the speed of 500mm/min by the level that temperature is 320 DEG C, in level dipping plated film groove, thermoplasticity equal benzene polyimide resin viscosity is 600-800mPas, and the surface coverage of alloy bonding silk insulate clad material; Then be cured process by UV curing oven at the same rate, obtain the insulating coating corrosion protected copper alloy bonding silk that insulating coating thicknesses of layers is 0.3 μm;
6th step, evenly whether the examination and test of products: the light microscope inspection overlay film surface condition by multiplication factor being 250 times, observe, have flawless and impurity; By unwrapping wire and the stress situation of pay-off equipment inspection bonding wire; Whether meet the requirements by the mechanical performance of universal testing machine inspection bonding wire, its requirement is: disruptive force B/L > 13gf, elongation E/L14-18%;
7th step, prepared by finished product: packed as requested by the insulating coating corrosion protected copper alloy bonding silk product be up to the standards, and scraps warehouse-in after the product of disqualified upon inspection pastes defective label.
Wherein overlay film and curing process adopt following special purpose device:
As shown in Figure 3, described special purpose device comprises circulating slot 4 and to be installed within circulating slot 4 and for the level dipping plated film groove 3 of contain liquids insulating coating material, and the upper edge of circulating slot 4 is lower than the upper edge of level dipping plated film groove 3.Also comprise the circulation dropper 7 be positioned at above level dipping plated film groove 3, circulating slot 4 is connected with described circulation dropper 7 with circulation pipe 8 by circulating pump 6.Also comprise the UV curing oven 9 be arranged on the right side of circulating slot 4.Also comprise the actinobacillus device 1 be arranged on the left of circulating slot 4 and the take-up 10 be arranged on the right side of UV curing oven 9.Bonding wire 2 between actinobacillus device 1 and take-up 10 is successively above the upper port of level dipping plated film groove 3 and the solidification chamber of UV curing oven 9.Bonding wire 2 is as far as possible near the upper port of level dipping plated film groove 3.
During use, viscous liquid insulating coating material is injected in circulation dropper 7, fluid insulation covering material is added drop-wise in level dipping plated film groove 3 continuously, and relies on its own face tension force to form the coating liquid 5 at the upper port edge being raised in level dipping plated film groove 3 in the upper port of level dipping plated film groove 3.Pass from the metallic bond plying of actinobacillus device 1 extraction the solidification chamber entering UV curing oven 9 after this is raised in the coating liquid 5 varnished insulation covering material at the upper port edge of level dipping plated film groove 3 and be cured process, finally be wound on take-up 10, complete bonding wire overlay film and solidification.
The coating liquid overflowed from the upper port of level dipping plated film groove 3 flows into circulating slot 4, gets back in circulation dropper 7 recycle through circulating pump 6 and circulation pipe 8.Coating liquid quantity not sufficient, with when the upper port of level dipping plated film groove 3 forms the coating liquid 5 at the upper port edge being raised in level dipping plated film groove 3, adds viscous liquid insulating coating material in circulation dropper 7.
Insulating coating corrosion-resisant alloy bonding wire prepared by the present invention, can reach following technical indicator:
In embodiment 1, the anticorrosive Silver alloy wire BL mean value of insulating coating can reach 12.4gf, and EL mean value can reach 16.2%; In embodiment 2, insulating coating anticorrosive copper wire BL mean value can reach 15.8gf, and EL mean value can reach 17.7%.The two soaks 100 hours under room temperature condition in the aqueous hydrochloric acid solution of 0.1mol/L, and rete is all without obscission, and corrosion resistance is good.Find out from Fig. 1 and accompanying drawing 2, IMC layer thickness is evenly moderate, and rete is continuous, and interface is good, does not observe hole defect and cracking phenomena.
The equipment such as described casting furnace, wire drawing machine, annealing furnace, bonding wire pay-off equipment, universal testing machine, be all conventional bonding wire and produce and inspection machine, its using method is also by those of ordinary skill in the art are known.

Claims (9)

1. an insulating coating corrosion-resisant alloy bonding wire, is characterized in that: it is made up of the alloy bonding silk of internal layer coated by high-molecular film layer anticorrosive with outer field insulation; Wherein the metal base of alloy bonding silk comprises gold, silver, copper and aluminium, and other metal for alloy comprises gold, silver, copper, aluminium, platinum, palladium, ruthenium, rhodium, osmium, iridium and rare earth element; Wherein insulating coating corrosion-resistant material is thermoplastic polyimide resin.
2. insulating coating corrosion-resisant alloy bonding wire as claimed in claim 1, is characterized in that: the content of described metal base accounts for 85 ~ 99.9wt% of alloy bonding silk; Surplus is described other metal for alloy, surplus Rare Earth Element Contents≤15ppm; The anticorrosive coated by high-molecular film layer thickness that insulate is 0.2 ~ 0.8 μm.
3. insulating coating corrosion-resisant alloy bonding wire as claimed in claim 2, is characterized in that: surplus Rare Earth Element Contents 3 ~ 15ppm.
4. insulating coating corrosion-resisant alloy bonding wire as claimed in claim 2, it is characterized in that: the gold content as other metal for alloy is 9%, palladium content as other metal for alloy is 3%, cerium content as other metal for alloy is 5ppm, and surplus is the silver as alloy base material.
5. insulating coating corrosion-resisant alloy bonding wire as claimed in claim 2, it is characterized in that: the silver content as other metal for alloy is 0.5%, surplus is the copper as alloy base material.
6. the preparation method of claim 1 or 2 or 3 or the insulation coating corrosion-resisant alloy bonding wire described in 4 or 5, is characterized in that comprising the following steps:
1), the selection of alloy base material or purification: select high-purity substrate metal of more than 99.999%; Or utilize purifying technique, make the purity of substrate metal reach more than 99.999%;
2), founding: mixed with required alloy by high-purity substrate metal, through prealloy, foundry alloy and continuous drawing casting technique, founding becomes alloying metal rod;
3), wire drawing: alloying metal rod is pulled into by wire drawing machine the silk thread requiring wire diameter;
4), anneal;
5), overlay film and solidification: flood plated film on the surface of alloy bonding silk by level, covering is insulated clad material, and carries out UV solidification process.
7. the preparation method of insulation coating corrosion-resisant alloy bonding wire as claimed in claim 6, is characterized in that: wherein step 2) in founding: according to Alloy constituent percentages, at 1000 DEG C ~ 1600 DEG C, utilize N 2blow and stir protection and carry out prealloy, foundry alloy, at 1000 ~ 1300 DEG C, carry out continuous drawing casting technique, founding becomes to meet diametric requirements alloying metal rod; ; Wherein in step 3) wire drawing, arrange the semi-finished product annealing of B alloy wire at 0.26mm place, annealing temperature is 350-450 DEG C, to reduce the lattice defect in semi-finished product B alloy wire, and improves the wire-drawing performance of fine line diameter B alloy wire;
Wherein step the 4) annealing in, the annealing temperature of finished product wire diameter B alloy wire is 350-650 DEG C, and the mechanical performance of adjustment B alloy wire meets the product requirement of corresponding wire diameter.
8. the preparation method of insulation coating corrosion-resisant alloy bonding wire as claimed in claim 6, is characterized in that: wherein in step 5) overlay film and solidification: alloy wire is the level dipping plated film groove of 300 DEG C ~ 350 DEG C by temperature with the speed of 300mm/min ~ 1000mm/min; In level dipping plated film groove, thermoplastic polyimide resin viscosity is 600mPas ~ 1000mPas, and the surface coverage of alloy bonding silk insulate clad material; Then process is cured by UV curing oven at the same rate.
9. the preparation method of insulation coating corrosion-resisant alloy bonding wire as claimed in claim 6, it is characterized in that wherein step 5) adopts following special purpose device to carry out overlay film and solidification: described special purpose device comprises circulating slot and is installed on the level dipping plated film groove for contain liquids insulating coating material within circulating slot, and the upper edge of plated film groove is flooded in the upper edge of circulating slot lower than level; Described special purpose device also comprises the circulation dropper be positioned at above level dipping plated film groove, and circulating slot is connected with described circulation dropper with circulation pipe by circulating pump; Described special purpose device also comprises the UV curing oven be arranged on the right side of circulating slot; Described special purpose device also comprises the actinobacillus device be arranged on the left of circulating slot and the take-up be arranged on the right side of UV curing oven; Bonding wire between actinobacillus device and take-up is successively above the upper port of level dipping plated film groove and the solidification chamber of UV curing oven.
CN201510879257.3A 2015-12-05 2015-12-05 A kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof Active CN105470228B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510879257.3A CN105470228B (en) 2015-12-05 2015-12-05 A kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510879257.3A CN105470228B (en) 2015-12-05 2015-12-05 A kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof

Publications (2)

Publication Number Publication Date
CN105470228A true CN105470228A (en) 2016-04-06
CN105470228B CN105470228B (en) 2018-10-23

Family

ID=55607782

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510879257.3A Active CN105470228B (en) 2015-12-05 2015-12-05 A kind of insulating coating corrosion-resisant alloy bonding wire and preparation method thereof

Country Status (1)

Country Link
CN (1) CN105470228B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598058A (en) * 2017-12-21 2018-09-28 汕头市骏码凯撒有限公司 One Albatra metal bonding wire and its manufacturing method
CN108922876A (en) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 A kind of billon bonding wire and its manufacturing method
CN112164685A (en) * 2020-08-31 2021-01-01 浙江大学 Organic-coated corrosion-resistant bonded silver wire and preparation method thereof
CN114883286A (en) * 2022-06-08 2022-08-09 江西蓝微电子科技有限公司 Gold-silver alloy composite bonding wire and manufacturing method thereof
CN115116857A (en) * 2022-07-01 2022-09-27 江西蓝微电子科技有限公司 Insulating alloy-coated bonding wire and preparation method thereof
CN115673007A (en) * 2022-02-22 2023-02-03 深圳中宝新材科技有限公司 Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit
CN116673194A (en) * 2023-06-07 2023-09-01 江阴市诚信合金材料有限公司 Monitoring system for high fatigue life nickel-manganese alloy wire and tectorial membrane production usefulness

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194735A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor device
JPH07268278A (en) * 1994-03-30 1995-10-17 Hitachi Ltd Heat-resistant coating material and bonding wire coated therewith
JPH08293519A (en) * 1995-04-25 1996-11-05 Nippon Steel Corp Manufacture of resin coated insulation bonding wire
CN1949493A (en) * 2006-11-03 2007-04-18 宁波康强电子股份有限公司 Bonded copper wire and preparing method thereof
CN102776408A (en) * 2012-08-16 2012-11-14 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof
CN202749117U (en) * 2012-07-17 2013-02-20 江苏大通机电有限公司 Polyimide enameled wire

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194735A (en) * 1985-02-25 1986-08-29 Hitachi Ltd Semiconductor device
JPH07268278A (en) * 1994-03-30 1995-10-17 Hitachi Ltd Heat-resistant coating material and bonding wire coated therewith
JPH08293519A (en) * 1995-04-25 1996-11-05 Nippon Steel Corp Manufacture of resin coated insulation bonding wire
CN1949493A (en) * 2006-11-03 2007-04-18 宁波康强电子股份有限公司 Bonded copper wire and preparing method thereof
CN202749117U (en) * 2012-07-17 2013-02-20 江苏大通机电有限公司 Polyimide enameled wire
CN102776408A (en) * 2012-08-16 2012-11-14 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598058A (en) * 2017-12-21 2018-09-28 汕头市骏码凯撒有限公司 One Albatra metal bonding wire and its manufacturing method
CN108598058B (en) * 2017-12-21 2020-05-19 汕头市骏码凯撒有限公司 Copper alloy bonding wire and manufacturing method thereof
CN108922876A (en) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 A kind of billon bonding wire and its manufacturing method
CN108922876B (en) * 2018-06-27 2020-05-29 汕头市骏码凯撒有限公司 Gold alloy bonding wire and manufacturing method thereof
CN112164685A (en) * 2020-08-31 2021-01-01 浙江大学 Organic-coated corrosion-resistant bonded silver wire and preparation method thereof
CN115673007A (en) * 2022-02-22 2023-02-03 深圳中宝新材科技有限公司 Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit
CN115673007B (en) * 2022-02-22 2023-04-18 深圳中宝新材科技有限公司 Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit
WO2023160730A1 (en) * 2022-02-22 2023-08-31 深圳中宝新材科技有限公司 Method for manufacturing insulated gold bonding wire for double-layer superposed packaging of integrated circuit
CN114883286A (en) * 2022-06-08 2022-08-09 江西蓝微电子科技有限公司 Gold-silver alloy composite bonding wire and manufacturing method thereof
CN115116857A (en) * 2022-07-01 2022-09-27 江西蓝微电子科技有限公司 Insulating alloy-coated bonding wire and preparation method thereof
CN116673194A (en) * 2023-06-07 2023-09-01 江阴市诚信合金材料有限公司 Monitoring system for high fatigue life nickel-manganese alloy wire and tectorial membrane production usefulness

Also Published As

Publication number Publication date
CN105470228B (en) 2018-10-23

Similar Documents

Publication Publication Date Title
CN105470228A (en) Insulating coating anti-corrosion alloy bonding wire and preparation method therefor
CN101707194B (en) production method of palladium-plated bonded copper wire
CN101667566B (en) Gold-coated-sliver base bonding silk thread and manufacture method thereof
CN107665874A (en) A kind of compound bonding wire of billon and its manufacture method for coating gold
TW200842904A (en) Flat cable
CN108122877A (en) Thin gold copper line and its manufacturing method
JP2010245390A (en) Bonding wire
CN104073676A (en) Bonding silver alloy wire for semiconductor, and manufacturing method thereof
CN102361026A (en) Copper-based bonding wire with anti-oxidation function
JP2013039603A (en) Method of manufacturing molten solder-plated twisted wire
WO2014137288A1 (en) Palladium coated copper wire for bonding applications
JP6479265B2 (en) Lead frame material, manufacturing method thereof, and semiconductor package
JP5109881B2 (en) Copper bonding wire
CN104377185A (en) Gold-plated palladium-silver alloy single crystal bonding wire and manufacturing method thereof
TW201837240A (en) Plated wire rod material, method for producing same, and cable, electric wire, coil and spring member, each of which is formed using same
CN101630664B (en) Silver based bonding wire and preparation method thereof
KR20130122325A (en) Copper-based bonding wire and semiconductor package including the same
CN108598058B (en) Copper alloy bonding wire and manufacturing method thereof
CN112342426A (en) Novel silver alloy bonding wire and manufacturing method thereof
CN105177345A (en) High-reliability copper alloy bonding wire for microelectronic packaging and manufacturing method thereof
CN114308595A (en) Surface nano palladium layer dip plating process for bonding oxygen-free copper wire
CN104752385B (en) A kind of IC package ultra-soft bonding wire and its manufacture method
KR20140031731A (en) Bonding wire for semiconductor devices and method of manufacturing the same
CN105489506B (en) The chi frame and its manufacture method of high bonding wire quality
KR101451361B1 (en) Cu alloy bonding wire for semiconductor package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20160406

Assignee: Yantai Yida Financial Leasing Co., Ltd

Assignor: YANTAI YINUO SEMICONDUCTOR MATERIAL CO.,LTD.

Contract record no.: X2021980013931

Denomination of invention: The invention relates to an insulating coated corrosion-resistant alloy bonding wire and a preparation method thereof

Granted publication date: 20181023

License type: Exclusive License

Record date: 20211206

EE01 Entry into force of recordation of patent licensing contract
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: The invention relates to an insulating coated corrosion-resistant alloy bonding wire and a preparation method thereof

Effective date of registration: 20211208

Granted publication date: 20181023

Pledgee: Yantai Yida Financial Leasing Co., Ltd

Pledgor: YANTAI YINUO SEMICONDUCTOR MATERIAL CO.,LTD.

Registration number: Y2021980014427

PE01 Entry into force of the registration of the contract for pledge of patent right