CN101707194B - production method of palladium-plated bonded copper wire - Google Patents
production method of palladium-plated bonded copper wire Download PDFInfo
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- CN101707194B CN101707194B CN200910221819XA CN200910221819A CN101707194B CN 101707194 B CN101707194 B CN 101707194B CN 200910221819X A CN200910221819X A CN 200910221819XA CN 200910221819 A CN200910221819 A CN 200910221819A CN 101707194 B CN101707194 B CN 101707194B
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Abstract
The present invention discloses a production method of a bonded copper wire using high-purity copper wires as a matrix and being coated with a pure-palladium protective layer on the surface thereof. The production method of the palladium-plated bonded copper wire comprises the following steps: extraction of high-purity copper, preparation of a single-crystal copper bar, coarse drawing, heat treatment, palladium plating on the surface, fine drawing, heat treatment, surface cleaning and shunt winding. The invention abandons the traditional backward technique of application directly after drawing firstly and then electroplating, and adopts the technique that firstly, copper wires with diameter of less than 1mm are produced, then the pure-palladium layer is electroplated, and finally, the palladium-plated bonded copper wire finished product is produced by fine drawing. The bonded copper wire product can effectively improve the oxidation resistance of the bonded copper wires, ensure that the appearance of the finished product keeps silver metallic luster, and greatly prolong the quality guarantee period of the bonded copper wire product after being sealed off; in addition, the mechanical strength of the finished product is strengthened and the oxidation resistance thereof is improved, thus being beneficial to reducing the wire diameter of the bonded copper wire, shortening welding spacing and being more applicable to packaging of high-density and multi-pin integrated circuits.
Description
Technical field
The present invention relates to behind the microelectronics road packaging process with metallic bond plying product technical field, especially digital closes the surface plating palladium structure and the manufacture method thereof of copper wire.
Background technology
The bond sequence of microelectronic device chip is meant and adopts ultrasonic pressing mode that the bonding wire two ends are welded on respectively on chip bonding pad and the lead frame pin at a certain temperature, and realization chip internal circuit is connected with external circuit.Early stage bonding wire is many to be made by proof gold, but along with rare day by day, the price of gold resource continues soaring, the microelectronics Packaging cost significantly rises, the insider has researched and developed success and has substituted expensive spun gold product with the copper wire product for this reason, this type of relatively more typical product such as State Intellectual Property Office on September 24th, 2008 Granted publication the ZL200610154487.4 name be called " bonding brass wire and preparation method thereof " and on October 22nd, 2008 Granted publication the ZL200610154485.5 name be called the patent of invention product of " a kind of bonding brass wire and preparation method thereof ".These bonding brass wires are cheap, and are better than spun gold in the performance of aspects such as stretching, shear strength and extension, have been successfully applied to the encapsulation production as products such as DIP, SOP and power devices.But, along with the microelectronic device chip industry day by day, develop to miniaturization, many pins high density direction fast, performance requirement for bonding brass wire is also more and more harsher, particularly in bonding technology, require bonding brass wire to possess good high temperature oxidation resisting and heat-resistant stability, and with surface plating palladium class lead frame product (for example May in 2007 Granted publication on the 23rd the patent No. be called " lead frame and manufacture method thereof " patent of invention product for the ZL02813731.0 name) have zygosity and a weldability preferably; Because packaging density strengthens, routing quantity increases, except the line footpath of further reduction bonding brass wire, also be necessary in addition, take place to reduce short circuit phenomenon at copper wire surface coverage insulating barrier.Now, there has been the people exploring the bonding brass wire manufacturing process that substitutes the electrogilding layer with the palladium plating layer in the industry, because the cost of palladium is than golden considerably cheaper, palladium stable performance in the high air of high temperature, high humidity or sulfide content, erosion that can be acidproof; Palladium has good ductility and plasticity, but harder than gold, can bear bending and friction, can keep good surface appearance and gloss for a long time.But owing to can't solve plating palladium layer and fine copper silk matrix surface bond strength problem always, until do not see yet patent application of the present invention day have this type of can be on a large scale, the palladium-plated bonded copper wire patent documentation of commercial application discloses in the State Intellectual Property Office website.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the easily oxidation of existing alloy type bonding brass wire surface, poor high temperature stability and gold-plated class bonding brass wire production cost height, electrodeposited coating the hardness low not defective and the deficiency of rub resistance, provide a kind of to society and be matrix, substitute low cost, the high-performance bonding brass wire Manufacturing Method of Products of Gold plated Layer, satisfy the demand that microelectronic device chip develops to miniaturization, many pins high density direction with plating palladium layer with the fine copper silk.
The technical solution adopted for the present invention to solve the technical problems is: palladium-plated bonded copper wire is a matrix with high-purity copper wire, and described matrix surface is covered with pure palladium protective layer; According to percentage by weight, palladium is 1.35%-8.19%, and all the other are copper, and both equal 100% at sum.
Described palladium-plated bonded copper wire diameter is 18 μ m-50 μ m; The purity of copper is greater than 99.9995%, and the purity of palladium is greater than 99.999%.
The manufacture method of patent palladium-plated bonded copper wire of the present invention may further comprise the steps:
1. extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper, cleans, dry for standby;
2. prepare the monocrystalline copper rod: high purity copper is placed metal single crystal continuous casting chamber, and continuous casting obtains
The vertical and horizontal number of die is high-purity copper rod of 1;
3. slightly pull out: will
The monocrystalline copper rod is drawn into the copper wire of diameter less than 1mm;
4. heat treatment: with the copper wire annealing of diameter less than 1mm;
5. palladium is plated on the surface: the copper wire after the annealing is electroplated pure palladium protective layer, and plating uses the purity requirement of palladium greater than 99.999%, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3, the percentage by weight of plating palladium layer is controlled at 1.35%-8.19%, and all the other are copper;
6. essence is pulled out: aforementioned electric is coated with the copper wire of pure palladium protective layer, and precision is drawn into
Palladium-plated bonded copper wire;
7. heat treatment: with palladium-plated bonded copper wire continuous annealing;
8. surface clean: use earlier the acid solution pickling, clean, dry by high purity water again;
9. bundling: monovolume scale.
Described 3. slightly take a step rapid, be with
The monocrystalline copper rod is drawn into
Copper wire.
In described 5. surface gold-plating step, thickness of coating is controlled at 0.5 μ m-3 μ m, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, can learn that plating palladium layer percentage by weight is 1.35%-8.19%.
Take a step suddenly in described 6. essence, the copper wire precision that is electroplate with pure palladium protective layer is drawn into
Bonding brass wire.
The manufacture method of palladium-plated bonded copper wire of the present invention, abandoned that traditional handicraft adopts usually---electroplate first drawing, back is direct applied backward technology; But after making the copper wire of diameter earlier, electroplate certain thickness pure palladium protective layer less than 1mm, and plating palladium layer thickness determines directly according to the bonding brass wire product line that mainly the product line footpath is more little, and the drawing rate is big more, and then required coating is thick more; Otherwise required coating is thin more; Generally speaking, thickness of coating is controlled at 0.5 μ m-3 μ m, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, the percentage by weight that can learn plating is 1.35%-8.19%, and all the other are copper; Semi-finished product after the plating are drawn into through multi-pass operation precision again
Palladium-plated bonded copper wire finished product Deng different size.To be electroplate with pure palladium protective layer
Fine copper silk precision is drawn in the palladium-plated bonded copper wire finished product process, the material of plating palladium protective layer is fine and close more, even, smooth surface, line style unanimity, palladium, copper molecule blend mutually, permeate between matrix surface and the plating palladium layer, plating palladium layer bond strength significantly improves, can effectively promote the antioxygenic property of bonding brass wire, guarantee that the finished product outward appearance keeps silvery white metallic luster, prolong the shelf-life after the bonding brass wire product is sealed off greatly; Raising, antioxygenic property owing to the finished product mechanical strength promotes again, helps further dwindling the line footpath of bonding brass wire, shortens weld spacing, is applicable to high density, the encapsulation of many pins more.That patent system making method of the present invention has is novel, operation simple, the significant advantage of being benefited, and can be widely used in all kinds of composite structured metallic bond plying products and make the field.
Description of drawings
Fig. 1 is a Manufacturing Method of Products schematic flow sheet of the present invention.
Embodiment
By description, be described in detail the manufacture method technical scheme of palladium-plated bonded copper wire of the present invention below in conjunction with accompanying drawing to two embodiment.
Embodiment one
1. extract high purity copper: copper nitrate solution is added high purity water in 1: 4 ratio dilute, be mixed with electrolyte; Immerse electrolyte with No. 1 fine copper of national standard as anode, and guarantee to have the fine copper of 95% volume ratio to immerse in the electrolyte; Immerse in the electrolyte as negative electrode with high-purity Copper Foil, guarantee to have high-purity Copper Foil of 95% volume ratio to immerse in the electrolyte equally; Between anode, negative electrode, import the direct current of 7-9V, 2.5-3.5A, keep electrolyte temperature in additional fresh electrolyte mode and be no more than 60 ℃; Treat that negative electrode gathers purity greater than 99.9995% high purity copper, in time change high-purity Copper Foil, again with clean, dry for standby.
2. prepare the monocrystalline copper rod: a continuous casting chamber that the horizontal casting metal single crystal of nitrogen protection is arranged, the purity that adds the purification gained is greater than 99.9995% high purity copper; Use Frequency Induction Heating to 1090-1110 ℃, treat to melt fully, after refining and the degasification, liquation is injected liquid storage tank insulation in the middle of the continuous casting chamber, in the continuous casting chamber of keeping 2-5L/min nitrogen purge gas flow, finish horizontal continuous casting of single crystal, obtain the fine copper liquation
The vertical and horizontal number of die is high-purity copper rod of 1; The monocrystalline copper rod can effectively reduce resistivity, the raising conductance of copper wire, strengthens it and does oxidation susceptibility.The method that this operation is more detailed and institute's application apparatus thereof, can consult State Intellectual Property Office on April 30th, 2008 Granted publication the ZL200510023514.X name be called " control method of metal single crystal continuous casting process and equipment " patent of invention technology, should belong to the known technology category.
3. slightly pull out: use conventional drawing equipment and technology, will
The monocrystalline copper rod is drawn into through the multi-pass operation
Copper wire.
4. heat treatment: will
Copper wire place annealing furnace, under 300 ℃ of temperature, be incubated 25min; Pass to nitrogen protection between soak, cool off with stove then.
5. surface plating palladium: use conventional electroplating device and technology, to after the annealing
Copper wire is electroplated pure palladium protection against oxidation layer, and plating uses the purity requirement of palladium greater than 99.999%; Current density 1-1.2A/dm
2, copper wire speed is 4-5m/min, thickness of coating is controlled at 0.5 μ m; Copper wire product behind the plating palladium is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, the percentage by weight that can learn palladium is 1.35%, and all the other are copper.
6. essence is pulled out: use conventional accurate drawing equipment and technology, aforementioned electric is coated with pure palladium protection against oxidation layer
Copper wire is through the multi-pass operation, and precision is drawn into
Palladium-plated bonded copper wire; For this
Palladium-plated bonded copper wire; according to constancy of volume law in the rolling metal processing; promptly on arbitrary cross section; the palladium area is identical with the ratio that copper face amasss all the time; so can converse the thickness of pure palladium protection against oxidation layer is 0.057 μ m, and this thickness plating palladium layer can effectively be isolated contacting of copper wire surface and air, strengthens the finished product antioxygenic property greatly; guarantee that outward appearance keeps silvery white metallic luster, effectively prolong the shelf-life after the bonding brass wire product is sealed off.
7. heat treatment: will
Palladium-plated bonded copper wire is by annealing furnace continuous annealing under 350 ℃ of temperature, and the bonding brass wire linear velocity is 65m/min.
8. surface clean: be that the acid solution of 1-2% is carried out pickling with concentration earlier, clean twice back by high purity water again and dry.
9. bundling: with 500m is the monovolume scale, and control wrapping wire tension force is 8g, and wire winding speed is 60-65m/min, distance between centers of tracks 4mm.
Embodiment two
Step 1. to step 4. with embodiment one.
5. surface plating palladium: use conventional electroplating device and technology, to after the annealing
Copper wire is electroplated pure palladium protection against oxidation layer, and plating uses the purity requirement of palladium greater than 99.999%; Current density 4-4.5A/dm
2, copper wire speed is 4-5m/min, thickness of coating is controlled at 3 μ m; Copper wire product behind the plating palladium is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, the percentage by weight that can learn palladium is 8.19%, and all the other are copper.
6. essence is pulled out: use conventional accurate drawing equipment and technology, aforementioned electric is coated with pure palladium protection against oxidation layer
Copper wire is through the multi-pass operation, and precision is drawn into
Palladium-plated bonded copper wire; For this
Palladium-plated bonded copper wire; according to constancy of volume law in the rolling metal processing; promptly on arbitrary cross section; the palladium area is identical with the ratio that copper face amasss all the time; so can converse the thickness of pure palladium protection against oxidation layer is 0.34 μ m, and this thickness plating palladium layer is enough to effectively to isolate contacting of copper wire surface and air fully, strengthens the finished product antioxygenic property greatly; guarantee that outward appearance keeps silvery white metallic luster, effectively prolong the shelf-life after the bonding brass wire product is sealed off.
All the other steps 7. to step 9. with embodiment one.
The manufacture method of palladium-plated bonded copper wire of the present invention, as described in embodiment one and embodiment two, abandoned that traditional handicraft adopts---electroplate first drawing, back is direct applied backward technology; But make earlier
Copper wire after, electroplate certain thickness pure palladium protective layer, the thickness of plating palladium layer determines directly according to the bonding brass wire product line that mainly promptly the product line footpath is more little, the drawing rate is big more, then required coating is thick more; Otherwise the product line footpath is big more, and the drawing rate is more little, and required coating is thin more; Thickness of coating is controlled at 0.5 μ m-3 μ m generally speaking, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, the percentage by weight that can learn plating is 1.35%-8.19%, and all the other are copper; Semi-finished product after plating precision again are drawn into
Palladium-plated bonded copper wire finished product Deng different size.In accurate drawing process, plating palladium layer material is fine and close more, even, smooth surface, line style unanimity, palladium, copper molecule blend mutually, permeate between matrix surface and the plating palladium layer, plating palladium layer bond strength significantly improves, can effectively promote the antioxygenic property of bonding brass wire, guarantee that outward appearance keeps good metal gloss, prolong the shelf-life after the bonding brass wire product is sealed off greatly.
Will be according to embodiment one and the manufacturing of embodiment two methods two kinds
When the palladium-plated bonded copper wire finished product was applied to packaging process, the comparing result of its test result and fine copper bonding wire was as follows:
Can learn from above-mentioned comparing result form, the palladium-plated bonded copper wire product that patented method of the present invention is made, the pull-off force after its encapsulation and the shearing force (rooting out solder joint power) of pushing the ball are all apparently higher than the fine copper bonding wire product of same size, with the firm welding Du Genggao of chip bonding pad, lead frame pin, possesses more stable shear fracture load.
Will be according to embodiment one and the manufacturing of embodiment two methods two kinds
Palladium-plated bonded copper wire finished product physical and chemical index and isometrical fine copper bonding wire comparing result such as following table:
| Technical parameter | Embodiment one finished product | Embodiment two finished products | φ 23 μ m fine copper bonding wires |
| Tensile strength | 230N/mm 2(MPa) | 250N/mm 2(MPa) | ＞220N/mm 2(MPa) |
| Yield strength | 135N/mm 2(MPa) | 150N/mm 2(MPa) | ＞110N/mm 2(MPa) |
| Wire rod hardness | 95HV 0.01 | 100HV 0.01 | 90±10HV 0.01 |
| Copper ball hardness | 60-70HV 0.01 | 70-80HV 0.01 | 70-90HV 0.01 |
| Resistivity | 1.5×10 -8-1.63×10 -8Ωm | 1.5×10 -8-1.67×10 -8Ωm | 1.6666-1.689×10 -8Ωm |
| Blowout current | Minimum 0.4A, maximum 8.5A | Minimum 0.4A, maximum 8.9A | Minimum 0.37A, maximum 8.73A |
| The camber scope | 110-225μm | 110-230μm | 115-225μm |
| The arc length scope | Maximum 290mil | Maximum 300mil | Maximum 280mil |
Can learn from above-mentioned comparing result form, the palladium-plated bonded copper wire product that patented method of the present invention is made, its mechanical strength will be higher than fine copper bonding wire product; Finished product bonding wire hardness is moderate, the welding balling-up is good; Owing to the raising of mechanical strength, can further dwindle the line footpath of bonding wire, shorten weld spacing, be applicable to high density, the encapsulation of many pins more; This product can effectively promote the antioxygenic property of bonding brass wire, guarantees that outward appearance keeps good metal gloss, prolongs the shelf-life after the bonding brass wire product is sealed off greatly.
Claims (6)
1. the manufacture method of a palladium-plated bonded copper wire is a matrix with high-purity copper wire, and described matrix surface is covered with pure palladium protective layer; According to percentage by weight, palladium is 1.35%-8.19%, and all the other are copper, and both equal 100% at sum; Described palladium-plated bonded copper wire diameter is 18 μ m-50 μ m, and the purity of copper is greater than 99.9995%, and the purity of palladium is greater than 99.999%; It may further comprise the steps:
1. extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper, cleans, dry for standby;
2. prepare the monocrystalline copper rod: high purity copper is placed metal single crystal continuous casting chamber, and continuous casting obtains
The vertical and horizontal number of die is high-purity copper rod of 1;
3. slightly pull out: will
The monocrystalline copper rod is drawn into the copper wire of diameter less than 1mm;
4. heat treatment: with the copper wire annealing of diameter less than 1mm;
5. palladium is plated on the surface: the copper wire after the annealing is electroplated pure palladium protective layer, and plating uses the purity requirement of palladium greater than 99.999%, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3, the percentage by weight of plating palladium layer is controlled at 1.35%-8.19%, and all the other are copper;
6. essence is pulled out: aforementioned electric is coated with the copper wire of pure palladium protective layer, and precision is drawn into
Palladium-plated bonded copper wire;
7. heat treatment: with palladium-plated bonded copper wire continuous annealing;
8. surface clean: use earlier the acid solution pickling, clean, dry by high purity water again;
9. bundling: monovolume scale.
2. the manufacture method of palladium-plated bonded copper wire according to claim 1 is characterized in that: described 3. slightly take a step rapid, be with
The monocrystalline copper rod is drawn into
Copper wire.
3. as the manufacture method of palladium-plated bonded copper wire as described in the claim 2, it is characterized in that: in described 5. surface plating palladium step, plating palladium layer thickness is controlled at 0.5 μ m, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, can learn that plating palladium layer percentage by weight is 1.35%.
4. as the manufacture method of palladium-plated bonded copper wire as described in the claim 2, it is characterized in that: in described 5. surface plating palladium step, plating palladium layer thickness is controlled at 3 μ m, is 8.92g/cm according to fine copper density
3, pure palladium density is 12.0g/cm
3Convert, can learn that plating palladium layer percentage by weight is 8.19%.
5. as the manufacture method of palladium-plated bonded copper wire as described in the claim 3, it is characterized in that: take a step suddenly in described 6. essence, will be electroplate with the copper wire of pure palladium protective layer, precision is drawn into
Bonding brass wire.
6. as the manufacture method of palladium-plated bonded copper wire as described in the claim 4, it is characterized in that: take a step suddenly in described 6. essence, will be electroplate with the copper wire of pure palladium protective layer, precision is drawn into
Bonding brass wire.
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| CN200910221819XA CN101707194B (en) | 2009-11-11 | 2009-11-11 | production method of palladium-plated bonded copper wire |
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| CN106252319A (en) * | 2016-08-05 | 2016-12-21 | 徐高磊 | A kind of cuprio bonding wire and production technology thereof |
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