CN102263038A - Surface treatment technology of bonding copper wire in production process - Google Patents
Surface treatment technology of bonding copper wire in production process Download PDFInfo
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- CN102263038A CN102263038A CN2011102389025A CN201110238902A CN102263038A CN 102263038 A CN102263038 A CN 102263038A CN 2011102389025 A CN2011102389025 A CN 2011102389025A CN 201110238902 A CN201110238902 A CN 201110238902A CN 102263038 A CN102263038 A CN 102263038A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
Abstract
The invention provides a surface treatment technology of a bonding copper wire in a production process, relating to the field of microelectronic material production. The technical scheme is as follows: electronic pulses are used to dip-plate a thin and dense porpezite composite coating on the surface of a copper wire in the surface treatment process of the bonding copper wire, thus improving anti-oxidation performance and weldability of the copper wire; and the porpezite composite coating is ensured to be opened easily when the welding is carried out, electrons are dispersed symmetrically after the welding is ended, and the offset does not occur. The surface treatment technology has the beneficial effects of overcoming the defects of many broken ends, low quality and low production rate in the traditional copper wire drawing processing. The bonding copper wire is a bonding wire which has good tensile property, shear strength, extensibility, electrical conductivity and thermal conductivity. The bonding copper wire can replace a bonding gold wire to the greatest extent, thus saving the consumption of monetary metal gold and having the significant meanings in gold strategic storage in China.
Description
Technical field
The present invention relates to the microelectronic material production field, relate in particular to a kind of bonding brass wire process for treating surface in process of production.
Background technology
Flourish along with microelectronics industry, integrated circuit Electronic Packaging industry is little to volume just fast, high-performance, highly dense, multicore sheet direction advances, thereby to the requirement of integrated circuit package lead material special thin (Φ 0.016mm), and ultra-fine bonding gold wire not competent thin space, long requirement apart from the bonding techniques index in bonding technology.In ultra fine-pitch ball bond technology, because the increasing of packaging pin number, the reducing of pin-pitch, ultra-fine bonding gold wire usually causes swing, the bonding fracture of bonding wire and steps on a phenomenon in bonding process; To the intensity of device envelope density also worse and worse; Become the stability of arc ability also to descend thereupon, thereby strengthened operation easier.In addition, in recent years, gold market value one road soars, ten years, the price of gold increased more than 200%, and the producer to using bonding gold wire has increased the heavy cost of raw material, production and carrying cost have also been strengthened simultaneously, the gross profit of production firm has dropped to 6% by 20%, thereby has caused capital turnover slow, has restricted the skill upgrading and the scale development of whole industry.Show that thus traditional bonding gold wire has reached its capacity limit according to the characteristics of self, the requirement that can not satisfy fine line diameter, high strength, low radian, long arc shape again and keep satisfactory electrical conductivity.Therefore, along with the development of semiconductor integrated circuit and discrete device industry, bonding gold wire in quality, quantitatively with on the cost all can not satisfy the demand for development of domestic market.The particularly low ultra-fine spun gold of radian, major part mainly depends on import, accounts for more than 45% of general import amount.So country is during new five-year plan, propose to include the special emphasis planned project of implementing of country in and grab, develop high-tech, high most advanced and sophisticated, energy-saving and cost-reducing, environmental type semiconductor integrated circuit package new material energetically improving novel electron device innovative technology and technique research and development level.The develop rapidly in electronic information epoch, passed by the distance of 0.18 μ m, 0.13 μ m, 0.10 μ m of the feature pitch size of the large scale integrated circuit of its application foundation and core, super large integrated circuit and very large scale integration is until the 0.07 current μ m level of production.Its integrated level also reaches tens million of transistors to several hundred million transistors, and which floor the wiring number of plies be developed to 10 layers by, and the wiring total length can be up to 1.4Km.So, the wiring of reason aluminium realizes multilayer interconnection on the silicon, because the restriction of the high resistivity of aluminium obviously is difficult to obtain performance.So reach 0.18 μ m or more hour at the chip features spacing dimension, we have adopted that resistivity is low according to research, electric property and mechanical performance be all good, and cheap monocrystalline copper wire carried out bonding test repeatedly, and the result solved the difficult problem that multilayer wiring will solve for many years.Kindred circumstances, because the chip input is rolling up up to thousands of input pins, the quantity and the length of original gold, aluminium bonding wire are also increased greatly, cause lead-in inductance, resistance very high, thereby also be difficult to adapt to the high-frequency high-speed performance demands, in this case, the single crystal Cu bonding wire (Φ 0.018mm) that we have taked cost performance to be better than spun gold has equally carried out the lead-in wire bonding, and what can congratulate is that the result has obtained unexpected success behind the bonding.From then on changed the corner on the market of traditional bonding gold wire, realized that the application future development prospect of monocrystalline copper wire bonding wire in China's integrated circuit microelectronics Packaging industrial system is very wide.Simultaneously also filled up the blank of China, saved the coinage metals drain of gold, had certain significant meaning increasing China's gold strategic reserves in this field.
But bonding brass wire surface treatment in process of production is a kind of difficult technology to grasp always; adopt in the traditional handicraft and in annealing operation, adopt Buchholz protection; for example: N2 95%, H2 5%; product welding performance and anti-oxidation performance in bonding process have been improved like this; but production cost is too high, and working condition too harshness is difficult to reach.
Summary of the invention
According to above deficiency, the invention provides a kind of bonding brass wire process for treating surface in process of production, production cost significantly reduces, the bonding brass wire of handling through present technique can replace bonding gold wire fully, be a kind of have good stretching, shear strength and ductility, its conductivity, the strong lead-in wire that closes that thermal conductivity is good.
The technical solution used in the present invention is: in the bonding brass wire surface treatment process, emphasis is to adopt the electronic impulse porpezite composite deposite that immersion plating one deck is thin and close on the surface of copper wire, improve its oxygen-proof property and weldability, coating is easily opened when guaranteeing welding, welding back electrons spread symmetry does not produce skew.
The concrete technological process of production of bonding brass wire is, the first step: adopting vacuum degree is that the 10-104MPa high vacuum furnace is higher than the fusing of 99.995% high purity copper with purity, be warmed up to 1100～1180 ℃, refining 60～120 minutes adopts the directional solidification mode to draw Φ 4～Φ 8mm single crystal Cu bar; Second step: the high-purity single crystal Cu bar that is drawn into is cold working to Φ 0.95～Φ 1.102mm, and every time drawing working modulus is 15～25%, and drawing speed is controlled at 40～60m/min; Be divided into 47～70 passages then, adopting every time working modulus is 7.59～17.82% the single crystal Cu bar to be pulled to Φ 0.018～Φ 0.02mm; Draw rate is 400～600m/min; 0.5mm with top mold surface roughness Ra is 0.025,0.5mm is higher than 0.025 with bottom mold surface roughness Ra; Keep component height such as wiredrawing step pulley, directive wheel, take-up reel bright and clean, surface roughness Ra is higher than 0.025; Wire drawing lubricant adopts soluble oil, and concentration is 0.4～0.8%, and temperature is 35～45 ℃ during wire drawing; The 3rd step: will go up the single crystal Cu bonding wire surface clean employing ultrasonic waves for cleaning that step is drawn into, cleansing medium adopts absolute alcohol, ultrasonic power 40～80W, frequency 20～40KHz; The 4th step: the single crystal Cu bonding wire after will cleaning is heat-treated on annealing after-combustion equipment, its heat treatment temperature is 410～425 ℃, heat treatment time is 0.7～2.0s, tension force during the annealing after-combustion is 0.6～2.8g: the 5th step: adopt the electronic impulse porpezite composite deposite that immersion plating one deck is thin and close on the surface of copper wire, improve its oxygen-proof property and weldability, coating is easily opened when guaranteeing welding, and welding back electrons spread symmetry does not produce skew; The 6th step: after-combustion finished product, packing, the single crystal Cu bonding wire after the heat treatment is adopted the vacuum forming packing, vacuum degree is 10-3～10-4Mpa.
The invention has the beneficial effects as follows: the monocrystalline copper material has fine and close solidified structure, after the present technique processing, eliminated horizontal crystal boundary, avoided shrinkage cavity, casting flaws such as pore, make its plastic deformation ability, mechanical performance, electric properties etc. are all apparently higher than common oxygen-free copper, the broken end that has overcome the traditional copper wire Wire Drawing is many, low and the low shortcoming of productivity ratio of quality, it is a kind of good stretching that has, shear strength and ductility, its conductivity, the strong lead-in wire that closes that thermal conductivity is good, bonding brass wire can replace bonding gold wire to a great extent, saved the coinage metals drain of gold, had certain significant meaning increasing China's gold strategic reserves.
Embodiment
Further the present invention is illustrated according to embodiment below:
Embodiment: the bonding brass wire technological process of production provided by the invention is: the first step: adopting vacuum degree is that the 10-104MPa high vacuum furnace is higher than the fusing of 99.995% high purity copper with purity, be warmed up to 1100～1180 ℃, refining 60～120 minutes adopts the directional solidification mode to draw Φ 4～Φ 8mm single crystal Cu bar; Second step: the high-purity single crystal Cu bar that is drawn into is cold working to Φ 0.95～Φ 1.102mm, and every time drawing working modulus is 15～25%, and drawing speed is controlled at 40～60m/min; Be divided into 47～70 passages then, adopting every time working modulus is 7.59～17.82% the single crystal Cu bar to be pulled to Φ 0.018～Φ 0.02mm; Draw rate is 400～600m/min; 0.5mm with top mold surface roughness Ra is 0.025,0.5mm is higher than 0.025 with bottom mold surface roughness Ra; Keep component height such as wiredrawing step pulley, directive wheel, take-up reel bright and clean, surface roughness Ra is higher than 0.025; Wire drawing lubricant adopts soluble oil, and concentration is 0.4～0.8%, and temperature is 35～45 ℃ during wire drawing; The 3rd step: will go up the single crystal Cu bonding wire surface clean employing ultrasonic waves for cleaning that step is drawn into, cleansing medium adopts absolute alcohol, ultrasonic power 40～80W, frequency 20～40KHz; The 4th step: the single crystal Cu bonding wire after will cleaning is heat-treated on annealing after-combustion equipment, its heat treatment temperature is 410～425 ℃, heat treatment time is 0.7～2.0s, tension force during the annealing after-combustion is 0.6～2.8g: the 5th step: adopt the electronic impulse porpezite composite deposite that immersion plating one deck is thin and close on the surface of copper wire, improve its oxygen-proof property and weldability.Coating is easily opened when guaranteeing welding, and welding back electrons spread symmetry does not produce skew.The 6th step: after-combustion finished product, packing, the single crystal Cu bonding wire after the heat treatment is adopted the vacuum forming packing, vacuum degree is 10-3～10-4Mpa.
Claims (2)
1. bonding brass wire process for treating surface in process of production, feature is in the bonding brass wire surface treatment process, adopts the electronic impulse porpezite composite deposite that immersion plating one deck is thin and close on the surface of copper wire, improves its oxygen-proof property and weldability.
2. bonding brass wire according to claim 1 process for treating surface in process of production, its key bond copper wire technological process of production is: the first step, adopting vacuum degree is that the 10-104MPa high vacuum furnace is higher than the fusing of 99.995% high purity copper with purity, be warmed up to 1100～1180 ℃, refining 60～120 minutes adopts the directional solidification mode to draw Φ 4～Φ 8mm single crystal Cu bar; Second step was cold working to Φ 0.95～Φ 1.102mm with the high-purity single crystal Cu bar that is drawn into, and every time drawing working modulus is 15～25%, and drawing speed is controlled at 40～60m/min; Be divided into 47～70 passages then, adopting every time working modulus is 7.59～17.82% the single crystal Cu bar to be pulled to Φ 0.018～Φ 0.02mm; Draw rate is 400～600m/min; 0.5mm with top mold surface roughness Ra is 0.025,0.5mm is higher than 0.025 with bottom mold surface roughness Ra; Keep component height such as wiredrawing step pulley, directive wheel, take-up reel bright and clean, surface roughness Ra is higher than 0.025; Wire drawing lubricant adopts soluble oil, and concentration is 0.4～0.8%, and temperature is 35～45 ℃ during wire drawing; In the 3rd step, the single crystal Cu bonding wire surface clean that last step is drawn into adopts ultrasonic waves for cleaning, and cleansing medium adopts absolute alcohol, ultrasonic power 40～80W, frequency 20～40KHz; The 4th step, the single crystal Cu bonding wire after cleaning to be heat-treated on annealing after-combustion equipment, its heat treatment temperature is 410～425 ℃, and heat treatment time is 0.7～2.0s, and the tension force during the annealing after-combustion is 0.6～2.8g; The 5th step, adopt the electronic impulse porpezite composite deposite that immersion plating one deck is thin and close on the surface of copper wire, improve its oxygen-proof property and weldability; Coating is easily opened when guaranteeing welding, and welding back electrons spread symmetry does not produce skew; In the 6th step, after-combustion finished product, packing adopt the vacuum forming packing with the single crystal Cu bonding wire after the heat treatment, and vacuum degree is 10
-3～10
-4Mpa.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102389025A CN102263038A (en) | 2011-08-19 | 2011-08-19 | Surface treatment technology of bonding copper wire in production process |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104716118A (en) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | Extremely fine palladium plating copper bonding wire and manufacture method thereof |
| CN105018713A (en) * | 2015-08-24 | 2015-11-04 | 浙江正导电缆有限公司 | Anti-oxidation device for wiredrawing and annealing of copper wire |
| CN106252319A (en) * | 2016-08-05 | 2016-12-21 | 徐高磊 | A kind of cuprio bonding wire and production technology thereof |
| CN109686713A (en) * | 2018-12-11 | 2019-04-26 | 上海万生合金材料有限公司 | A kind of plating gold-palladium copper wire and preparation method thereof |
| CN111519227A (en) * | 2020-03-30 | 2020-08-11 | 安徽广宇电子材料有限公司 | Anti-oxidation treatment equipment of copper wire material for bonding wire preparation |
| CN114308595A (en) * | 2021-12-30 | 2022-04-12 | 安徽广宇电子材料有限公司 | Surface nano palladium layer dip plating process for bonding oxygen-free copper wire |
| CN115141946A (en) * | 2022-08-03 | 2022-10-04 | 中南大学 | Short-process preparation and processing method for high-performance copper alloy wire |
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| CN101707194A (en) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | Palladium-plated bonded copper wire and production method thereof |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
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| CN101707194A (en) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | Palladium-plated bonded copper wire and production method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716118A (en) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | Extremely fine palladium plating copper bonding wire and manufacture method thereof |
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| CN105018713A (en) * | 2015-08-24 | 2015-11-04 | 浙江正导电缆有限公司 | Anti-oxidation device for wiredrawing and annealing of copper wire |
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| CN106252319A (en) * | 2016-08-05 | 2016-12-21 | 徐高磊 | A kind of cuprio bonding wire and production technology thereof |
| CN106252319B (en) * | 2016-08-05 | 2018-08-28 | 佛山市南海松岗新亚太铜业有限公司 | A kind of copper-based bonding wire and its production technology |
| CN109686713A (en) * | 2018-12-11 | 2019-04-26 | 上海万生合金材料有限公司 | A kind of plating gold-palladium copper wire and preparation method thereof |
| CN111519227A (en) * | 2020-03-30 | 2020-08-11 | 安徽广宇电子材料有限公司 | Anti-oxidation treatment equipment of copper wire material for bonding wire preparation |
| CN111519227B (en) * | 2020-03-30 | 2021-02-23 | 安徽广宇电子材料有限公司 | Anti-oxidation treatment equipment of copper wire material for bonding wire preparation |
| CN114308595A (en) * | 2021-12-30 | 2022-04-12 | 安徽广宇电子材料有限公司 | Surface nano palladium layer dip plating process for bonding oxygen-free copper wire |
| CN115141946A (en) * | 2022-08-03 | 2022-10-04 | 中南大学 | Short-process preparation and processing method for high-performance copper alloy wire |
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Application publication date: 20111130 |