CN104810457A - Light emitting diode (LED) packaging technology based on palladium plated copper wire - Google Patents
Light emitting diode (LED) packaging technology based on palladium plated copper wire Download PDFInfo
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- CN104810457A CN104810457A CN201510147637.8A CN201510147637A CN104810457A CN 104810457 A CN104810457 A CN 104810457A CN 201510147637 A CN201510147637 A CN 201510147637A CN 104810457 A CN104810457 A CN 104810457A
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- led
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- copper cash
- crystal
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 98
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 49
- 238000012536 packaging technology Methods 0.000 title abstract description 5
- 239000003292 glue Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 239000011265 semifinished product Substances 0.000 claims abstract description 6
- 238000007711 solidification Methods 0.000 claims abstract description 6
- 230000008023 solidification Effects 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 44
- 238000007747 plating Methods 0.000 claims description 35
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000032683 aging Effects 0.000 claims description 5
- 238000010257 thawing Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 4
- 239000007787 solid Substances 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000009864 tensile test Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45647—Copper (Cu) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention belongs to the field of light emitting diode (LED) packaging and particularly discloses an LED packaging technology based on a palladium plated copper wire. An LED wafer that is manufactured by the packaging technology is good in light reflecting property, light absorption is absent, and the price is lower than that of a traditional gold wire. The packaging technology includes (1) preparing of raw materials, (2) solid crystal production, (3) solid crystal glue baking, (4) wire welding, (5) glue dispensing and (6) baking, wherein the sep (4) includes that positive and negative poles of the LED wafer are electrically connected with positive and negative poles of an LED support on a wire welding machine by the palladium plated copper wire, single crystal copper wire purity in the palladium plated copper wire is larger than or equal to 99.99%, an anti-oxidation palladium metal layer which is 0.1-0.2 mum in thickness covers the surface of the palladium plated copper wire, the diameter of the palladium plated copper wire is 0.9mil, bonding parameters of the LED wafer and an alloy wire include 40-70mw welding power, 70-120gms welding pressure, 10-20ms welding time and 160-180 DEG C bonding area temperature, and the step (5) includes that a semi-finished product of which crystal solidification and wire welding are already finished is packaged by means of glue.
Description
Technical field
The invention belongs to LED field, particularly relate to a kind of LED technique based on plating palladium copper cash.
Background technology
It is utilize ultrasonic wave (60-120KHz) generator to make the elastic vibration of chopper occurred level that current LED encapsulates bonding wire, applies downward pressure simultaneously.Make chopper under these two kinds of power effects, drive lead-in wire to rub rapidly in welding zone metal surface, and then surface oxide layer is fallen in abrasion, lead-in wire, by energy generation plastic deformation, becomes to weld with bonding region close contact in 25ms.In addition, also want external heat source, object is the energy level of active material, promotes effective connection of two kinds of metals and the diffusion of intermetallic compound (IMC) and growth.
In existing LED technique, usually adopt silver-colored line or gold thread as bonding wire, because the thermal conductivity of silver is higher, easily form long heat affected area, heat affected area is due to coarse grains, and mechanical performance declines, and easily causes B point to rupture when tensile test.In all metals, the conductivity of silver is best, and the conductance of gold is 76.7% of silver, but the chemical stability of silver is not as gold, oxidizable, sulfuration, therefore will notice in manufacturing process that environment and operating time control.
Summary of the invention
The present invention overcomes the deficiency that prior art exists, solve prior art Problems existing, there is provided a kind of LED process flow based on plating palladium copper cash, the LED wafer reflective function that this packaging technology makes is good, not extinction and relative to traditional gold thread low price.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of LED technique based on plating palladium copper cash, carries out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;
4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected with plating palladium copper cash, monocrystalline copper cash purity >=99.99% in described plating palladium copper cash, it is the anti-oxidation palladium metal layer of μm thickness that plating palladium copper line surface covers 0.1-0.2, the diameter of plating palladium copper cash is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 40-70mw, welding pressure 70-120gms, weld time 10-20ms, bonding region temperature 160-180 DEG C, carries out tensile test after bonding wire;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
Preferably, nitrogen protection is carried out during bonding wire.
The present invention compared with prior art has following beneficial effect: the LED technology utilization plating palladium copper cash that the present invention adopts replaces original gold thread, plating palladium copper cash low price, about 10% of the spun gold of equal wire diameter, cost declines about 90%, and the LED wafer after being completed by the suitable welding parameter of employing, reflective is good, not extinction, and brightness can improve about 10% compared with use gold thread.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention will be further described in detail.
Fig. 1 is the schematic diagram of tensile test.
Embodiment
Embodiment one
As shown in Figure 1, a kind of LED technique based on plating palladium copper cash, carry out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;
4) bonding wire: the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected on bonding equipment with plating palladium copper cash in nitrogen protection scope, monocrystalline copper cash purity >=99.99% in described plating palladium copper cash, it is the anti-oxidation palladium metal layer of μm thickness that plating palladium copper line surface covers 0.1-0.2, the diameter of plating palladium copper cash is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 40-50mw, welding pressure 70-90gms, weld time 10ms, bonding region temperature 160-165 DEG C, carries out tensile test after bonding wire;
The plating palladium copper cash selected carries out tensile test and requires disconnected B or C point >=8g;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
Because the chemical stability of copper is not as silver, oxidizable, easy sulfuration, therefore select during plated surface palladium copper cash bonding wire and carry out nitrogen protection, this makes it possible to effectively to prevent to plate the copper oxidation in palladium copper cash, sulfuration, the conductor wire of impact plating palladium copper cash and the brightness of LED wafer.
Example two
Based on a LED technique for plating palladium copper cash, carry out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;
4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected with plating palladium copper cash, monocrystalline copper cash purity >=99.99% in described plating palladium copper cash, it is the anti-oxidation palladium metal layer of μm thickness that plating palladium copper line surface covers 0.1-0.2, the diameter of plating palladium copper cash is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 50-60mw, welding pressure 90-100gms, weld time 15ms, bonding region temperature 165-170 DEG C, carries out tensile test after bonding wire;
The plating palladium copper cash selected carries out tensile test and requires disconnected B or C point >=8g;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
Embodiment three
Based on a LED technique for plating palladium copper cash, carry out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;
4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected with plating palladium copper cash, monocrystalline copper cash purity >=99.99% in described plating palladium copper cash, it is the anti-oxidation palladium metal layer of μm thickness that plating palladium copper line surface covers 0.1-0.2, the diameter of plating palladium copper cash is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 60-70mw, welding pressure 100-120gms, weld time 20ms, bonding region temperature 170-180 DEG C, carries out tensile test after bonding wire;
The plating palladium copper cash selected carries out tensile test and requires disconnected B or C point >=8g;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
The present invention can summarize with other the concrete form without prejudice to spirit of the present invention or principal character.Therefore, no matter from which point, above-mentioned embodiment of the present invention all can only be thought explanation of the present invention and can not limit invention, claims indicate scope of the present invention, and scope of the present invention is not pointed out in above-mentioned explanation, therefore, any change in the implication suitable with claims of the present invention and scope, all should think to be included in the scope of claims.
Claims (2)
1., based on a LED technique for plating palladium copper cash, it is characterized in that, carry out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support;
4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected with plating palladium copper cash, monocrystalline copper cash purity >=99.99% in described plating palladium copper cash, it is the anti-oxidation palladium metal layer of μm thickness that plating palladium copper line surface covers 0.1-0.2, the diameter of plating palladium copper cash is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 40-70mw, welding pressure 70-120gms, weld time 10-20ms, bonding region temperature 160-180 DEG C;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
2. a kind of LED technique based on plating palladium copper cash according to claim 1, is characterized in that: nitrogen protection during bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510147637.8A CN104810457A (en) | 2015-03-31 | 2015-03-31 | Light emitting diode (LED) packaging technology based on palladium plated copper wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510147637.8A CN104810457A (en) | 2015-03-31 | 2015-03-31 | Light emitting diode (LED) packaging technology based on palladium plated copper wire |
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| CN104810457A true CN104810457A (en) | 2015-07-29 |
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| CN201510147637.8A Pending CN104810457A (en) | 2015-03-31 | 2015-03-31 | Light emitting diode (LED) packaging technology based on palladium plated copper wire |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326706A (en) * | 2018-09-19 | 2019-02-12 | 北京大学东莞光电研究院 | A kind of LED encapsulation method based on graphene alloy wire |
| CN114883285A (en) * | 2022-04-19 | 2022-08-09 | 江西万年芯微电子有限公司 | Production process for developing special bonding mode of gold immersion substrate |
| CN117116923A (en) * | 2023-10-25 | 2023-11-24 | 广东风华芯电科技股份有限公司 | Dual-channel switching transistor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109326706A (en) * | 2018-09-19 | 2019-02-12 | 北京大学东莞光电研究院 | A kind of LED encapsulation method based on graphene alloy wire |
| CN114883285A (en) * | 2022-04-19 | 2022-08-09 | 江西万年芯微电子有限公司 | Production process for developing special bonding mode of gold immersion substrate |
| CN114883285B (en) * | 2022-04-19 | 2024-01-30 | 江西万年芯微电子有限公司 | Production process for developing special bonding mode of gold-deposited substrate |
| CN117116923A (en) * | 2023-10-25 | 2023-11-24 | 广东风华芯电科技股份有限公司 | Dual-channel switching transistor and manufacturing method thereof |
| CN117790669A (en) * | 2023-12-27 | 2024-03-29 | 深圳市欣信盈科技有限公司 | Small-volume LED device for mobile phone screen and packaging method thereof |
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