CN205960024U - Flip LED chip - Google Patents
Flip LED chip Download PDFInfo
- Publication number
- CN205960024U CN205960024U CN201620935245.8U CN201620935245U CN205960024U CN 205960024 U CN205960024 U CN 205960024U CN 201620935245 U CN201620935245 U CN 201620935245U CN 205960024 U CN205960024 U CN 205960024U
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- Prior art keywords
- pad
- collets
- flip led
- led chips
- substrate
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Abstract
The utility model discloses a flip LED chip, including the substrate that top -down set gradually, N type layer, luminescent layer, P type layer and reflection stratum, be equipped with P lead wire electrode and N lead wire electrode on the bottom surface in reflection stratum, be equipped with the N pad on the N lead wire electrode, be equipped with the P pad on the P lead wire electrode, be equipped with collets between N pad and the P pad. The utility model has the advantages of avoided short circuit or overheated appearing between N pad and the P pad after the welding through collets, and aroused that flip LED chip became invalid, still improved the LED performance after encapsulating simultaneously.
Description
Technical field
This utility model is related to LED core chip technology, more particularly, to flip LED chips.
Background technology
In flip LED chips, at pad, gather very big heat, when LED chip power increases, the heat of generation cannot
Timely and effective shed, so that luminous efficiency is declined, temperature rise leads to the spectral red shift that chip reflects, colour temperature Quality Down, LED life
Reduce.
In flip LED chips, PN junction produce heat mainly pass through pad and weld material be transferred to thermal conductive substrate support or
The external world, is close to due to only several microns of the thickness of the epitaxial structure of flip-chip and with the welding material used by welding, will fall
During dress LED chip and heat-conducting substrate are fixing and when LED component works under larger electric current, the heat of welding or
The heat that LED chip work produces can make welding material melt, and after welding material fusing, P pad area welding stream is to N pad area or N weldering
Panel welding stream is to P pad area, thus causing LED chip short circuit, causes LED chip to lose efficacy.In addition, welding in life-time service
The migration of layer silver ion also results in LED chip short-circuit failure.
After existing flip LED chips are welded to substrate, because of thermal coefficient of expansion and the substrate thermal coefficient of expansion of flip LED chips
The different and thermal stress that produces, thus lead to flip LED chips Cracking Failure.After existing flip LED chips are welded to substrate,
There is air layer between dress LED chip and substrate, and air layer is placed exactly at the maximum temperature of flip LED chips center, impact dissipates
Heat, leads to LED core piece performance to reduce, failure risk increases.
Utility model content
In order to overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of flip LED chips, and it can carry
LED core piece performance after high encapsulation, solves the problems, such as the short-circuit and excessively thermally-induced inefficacy of LED chip simultaneously.
The purpose of this utility model employs the following technical solutions realization：
A kind of flip LED chips, including the substrate setting gradually from top to bottom, N-type layer, luminescent layer, P-type layer and reflection
Layer；The bottom surface in reflecting layer is provided with P lead electrode and N lead electrode, and N lead electrode is provided with N pad, and P lead electrode sets
There is P pad；It is provided with collets between N pad and P pad.
Preferably, collets are transparent insulation block or are the collets that the reflectance to visible ray is more than 85%.
Preferably, the heat conductivity of collets is more than 0.1w/mk.
Preferably, when the hardness of collets is more than shore hardness D90, the coefficient of expansion of collets is 1*10-6/℃-20*
10-6/℃.
Preferably, collets are cuboid, and it is located at the bottom center position in reflecting layer.
Preferably, the height of collets is 1-60um.
Preferably, the width of collets is not less than 50um.
Preferably, also including substrate, N pad and P pad are both secured on substrate.
Preferably, described N pad and P pad are all fixed on substrate by welding material.
Compared to existing technology, the beneficial effects of the utility model are：N pad after collets avoid welding and
Occur short-circuit or overheated between P pad, and cause flip LED chips to lose efficacy, also improve the LED performance after encapsulation simultaneously.
Brief description
Fig. 1 is the schematic cross-section one of flip LED chips of the present utility model；
Fig. 2 is the schematic cross-section two of flip LED chips of the present utility model.
In figure：01st, substrate；02nd, N-type layer；03rd, luminescent layer；04th, P-type layer；05th, reflecting layer；06th, P pad；07th, N pad；
08th, collets；09th, welding material；10th, substrate.
Specific embodiment
Below, in conjunction with accompanying drawing and specific embodiment, this utility model is described further：
As shown in figure 1, a kind of flip LED chips, including the substrate 01 setting gradually from top to bottom, N-type layer 02, luminescent layer
03rd, P-type layer 04 and reflecting layer 05；Substrate 01 is Sapphire Substrate.
The bottom surface in reflecting layer 05 is provided with P lead electrode and N lead electrode, and N lead electrode and N-type layer 02 are electrically connected with, P
Lead electrode and P-type layer 04 are electrically connected with, and are provided with N pad 07, in reflecting layer on the N lead electrode on the bottom surface in reflecting layer 05
P lead electrode on 05 bottom surface is provided with P pad 06；It is provided with collets 08 between N pad 07 and P pad 06.
Collets 08 are used for avoiding short circuit phenomenon between N pad 07 and P pad 06, it is to avoid flip LED chips due to
Short-circuit or excessively thermally-induced chip failure, improves the light extraction efficiency of flip LED chips simultaneously.
Collets 08 are cuboid, and with the above-below direction in Fig. 1 as standard, its top-down height is 1-60um, its
Left and right width is less than the distance between N pad 07 and P pad 06 and to be not less than 50um, its length from inside to outside and reflecting layer
05 length from inside to outside is identical, and collets are located at the center of reflecting layer 05 bottom surface.
Collets 08 are transparent insulation block or the collets that the reflectance of visible ray is more than with 85%, can be SiO2,
One or more of Si3N4, Al2O3 or TiO2 make or silica gel, epoxy resin (Epoxy), spin-coating glass film
One or more of (spin-on glass) or high molecular polymer make；Wherein high molecular polymer can be selected for polyamides Asia
One or more of amine (PI), polymethyl methacrylate PMMA or benzocyclobutene (BCB), the heat conductivity of collets 08 is more than 0.1w/
mk；When the hardness of collets is more than shore hardness D90, the coefficient of expansion of collets is 1*10-6/℃-20*10-6/℃.
As shown in Fig. 2 further, flip LED chips also include substrate 10 in application, and substrate 10 is located at N pad 07
With the lower section of P pad 06, N pad 07 and P pad 06 be all fixed on substrate 10 by welding material 09, and welding material 09 is with Reflow Soldering
Or the mode of eutectic weldering is fixed on substrate 10, welding material 09 can be but not limited to tin cream.
The process is simple of collets 08, material are various, and geomery is easy to make；During application, big according to collets 08
Little, accurately control welding material 09 to measure, so that the thickness of welding material 09 and collets 08 match, thus improving flip LED core
The welding quality of piece；Collets 08 can improve LED chip light extraction efficiency, increase radiating effect and reduce failure risk.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection of this utility model claim
Within the scope of.
Claims (9)
1. a kind of flip LED chips are it is characterised in that include the substrate setting gradually from top to bottom, N-type layer, luminescent layer, p-type
Layer and reflecting layer；The bottom surface in reflecting layer is provided with P lead electrode and N lead electrode, and N lead electrode is provided with N pad, P lead
Electrode is provided with P pad；It is provided with collets between N pad and P pad.
2. flip LED chips as claimed in claim 1 are it is characterised in that collets are transparent insulation block or are to visible ray
Reflectance be more than 85% collets.
3. flip LED chips as claimed in claim 1 are it is characterised in that the heat conductivity of collets is more than 0.1w/mk.
4. flip LED chips as claimed in claim 1 it is characterised in that collets hardness be more than shore hardness D90 when,
The coefficient of expansion of collets is 1*10-6/℃-20*10-6/℃.
5. flip LED chips as claimed in claim 1 it is characterised in that collets be cuboid, and be located at reflecting layer bottom
Face center.
6. flip LED chips as claimed in claim 4 are it is characterised in that the height of collets is 1-60um.
7. the flip LED chips as described in claim 4 or 5 are it is characterised in that the width of collets is not less than 50um.
8. it is characterised in that also including substrate, N pad and P pad are both secured to flip LED chips as claimed in claim 1
On substrate.
9. flip LED chips as claimed in claim 8 are it is characterised in that described N pad and P pad are all solid by welding material
On substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620935245.8U CN205960024U (en) | 2016-08-24 | 2016-08-24 | Flip LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620935245.8U CN205960024U (en) | 2016-08-24 | 2016-08-24 | Flip LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205960024U true CN205960024U (en) | 2017-02-15 |
Family
ID=57977386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620935245.8U Active CN205960024U (en) | 2016-08-24 | 2016-08-24 | Flip LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205960024U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108647172A (en) * | 2018-06-04 | 2018-10-12 | 北京航天时代光电科技有限公司 | A kind of burning program method of eeprom chip |
-
2016
- 2016-08-24 CN CN201620935245.8U patent/CN205960024U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108647172A (en) * | 2018-06-04 | 2018-10-12 | 北京航天时代光电科技有限公司 | A kind of burning program method of eeprom chip |
| CN108647172B (en) * | 2018-06-04 | 2020-04-10 | 北京航天时代光电科技有限公司 | Program burning method of EEPROM chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 510000 Room 201, building A4, No. 11, Kaiyuan Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Silicon energy photoelectric semiconductor (Guangzhou) Co.,Ltd. Address before: 510000 second floor, building A4, No. 11, Kaiyuan Avenue, Science City, Guangzhou Development Zone, Guangzhou, Guangdong Patentee before: GUANGZHOU LEDTEEN OPTOELECTRONICS Co.,Ltd. |
|
| CP03 | Change of name, title or address |