CN104810450A - Light emitting diode (LED) packaging technology based on silver alloy wires - Google Patents

Light emitting diode (LED) packaging technology based on silver alloy wires Download PDF

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Publication number
CN104810450A
CN104810450A CN201510147636.3A CN201510147636A CN104810450A CN 104810450 A CN104810450 A CN 104810450A CN 201510147636 A CN201510147636 A CN 201510147636A CN 104810450 A CN104810450 A CN 104810450A
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led
bonding
silver alloy
alloy wires
alloy wire
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CN201510147636.3A
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Chinese (zh)
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徐龙飞
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长治虹源光电科技有限公司
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Priority to CN201510147636.3A priority Critical patent/CN104810450A/en
Publication of CN104810450A publication Critical patent/CN104810450A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The invention belongs to the field of light emitting diode (LED) packaging, particularly discloses an LED packaging technology based on silver alloy wires and provides an LED packaging process based on the silver alloy wires. An LED wafer that is manufactured by the packaging process is good in light reflecting performance, light absorption is absent, and the price is lower than that of traditional gold wires. The packaging technology includes steps of (1) raw material preparation, (2) solid crystal production, (3) solid crystal glue baking, (4) wire welding, (5) glue dispensing and (6) baking, wherein the step (4) includes that positive and negative poles of the LED wafer are electrically connected with positive and negative poles of an LED support on a wire welding machine through the silver alloy wires, the gold content in the alloy wires is 7%-9%, the silver content in the alloy wires is 88%-90%, the diameter of the silver alloy wires is 0.9mil, bonding parameters of the LED wafer and the alloy wires include that the welding power is 20-50mw, the welding pressure is 20-50gms, welding time is 10-20ms and the bonding area temperature is 150-170 DEGC, and tensile test is performed after wire welding.

Description

A kind of LED technique based on silver alloy wire

Technical field

The invention belongs to LED field, particularly relate to a kind of LED technique based on silver alloy wire.

Background technology

It is utilize ultrasonic wave (60-120KHz) generator to make the elastic vibration of chopper occurred level that current LED encapsulates bonding wire, applies downward pressure simultaneously.Make chopper under these two kinds of power effects, drive lead-in wire to rub rapidly in welding zone metal surface, and then surface oxide layer is fallen in abrasion, lead-in wire, by energy generation plastic deformation, becomes to weld with bonding region close contact in 25ms.In addition, also want external heat source, object is the energy level of active material, promotes effective connection of two kinds of metals and the diffusion of intermetallic compound (IMC) and growth.

In existing LED technique, usually adopt silver-colored line or gold thread as bonding wire, because the thermal conductivity of silver is higher, easily form long heat affected area, heat affected area is due to coarse grains, and mechanical performance declines, and easily causes B point to rupture when tensile test.In all metals, the conductivity of silver is best, and the conductance of gold is 76.7% of silver, but the chemical stability of silver is not as gold, oxidizable, sulfuration, therefore will notice in manufacturing process that environment and operating time control.

Summary of the invention

The present invention overcomes the deficiency that prior art exists, solve prior art Problems existing, there is provided a kind of LED process flow based on silver alloy wire, the LED wafer reflective function that this packaging technology makes is good, not extinction and relative to traditional gold thread low price.

In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of LED technique based on silver alloy wire, carries out according to following steps:

1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;

2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;

3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;

4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected by silver alloy wire, in described alloy wire, gold content is 7-9%, silver content is 88-90%, the diameter of silver alloy wire is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 20-50mw, welding pressure 20-50gms, weld time 10-20ms, bonding region temperature 150-170 DEG C, carries out tensile test after bonding wire;

5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;

6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.

Preferably, described some glue step is carried out in 24 hours after bonding wire completes.

The present invention compared with prior art has following beneficial effect.The LED technology utilization silver alloy wire that the present invention adopts replaces original gold thread, silver alloy wire low price is about 20% of equal wire diameter gold thread, cost have dropped 80%, and the LED wafer after being completed by the suitable welding parameter of employing, reflective is good, not extinction, brightness can improve about 10% compared with use gold thread.

Accompanying drawing explanation

Below in conjunction with accompanying drawing, the present invention will be further described in detail.

Fig. 1 is the schematic diagram of tensile test.

Embodiment

Embodiment one

As shown in Figure 1, a kind of LED technique based on silver alloy wire, carry out according to following steps:

1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;

2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;

3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;

4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected by silver alloy wire, in described alloy wire, gold content is 8%, silver content is 89%, the diameter of silver alloy wire is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 20-30mw, welding pressure 20-30gms, weld time 15ms, bonding region temperature 150-160 DEG C, carries out tensile test after bonding wire;

The silver alloy wire selected is carried out tensile test and is required disconnected B or C point >=8g;

5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;

6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.

Preferably, described some glue step is carried out in 24 hours after bonding wire completes.Because the chemical stability of silver is not as gold, oxidizable, easy sulfuration, therefore bonding wire must carry out a glue step in 24 hours after completing, and this makes it possible to effectively to prevent that the silver in silver alloy wire is oxidized, sulfuration, affects the conductor wire of silver alloy wire and the brightness of LED wafer.

Example two

Based on a LED technique for silver alloy wire, carry out according to following steps:

1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;

2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;

3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;

4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected by silver alloy wire, in described alloy wire, gold content is 7-9%, silver content is 88-90%, the diameter of silver alloy wire is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 20-40mw, welding pressure 20-40gms, weld time 10ms, bonding region temperature 150-170 DEG C, carries out tensile test after bonding wire;

The silver alloy wire selected is carried out tensile test and is required disconnected B or C point >=8g;

5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;

6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.

Embodiment three

Based on a LED technique for silver alloy wire, carry out according to following steps:

1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;

2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;

3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support, carry out thrust test after crystal-bonding adhesive has toasted;

4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected by silver alloy wire, in described alloy wire, gold content is 7-9%, silver content is 88-90%, the diameter of silver alloy wire is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 25-45mw, welding pressure 24-45gms, weld time 20ms, bonding region temperature 160-170 DEG C, carries out tensile test after bonding wire;

The silver alloy wire selected is carried out tensile test and is required disconnected B or C point >=8g;

5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;

6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.

The present invention can summarize with other the concrete form without prejudice to spirit of the present invention or principal character.Therefore, no matter from which point, above-mentioned embodiment of the present invention all can only be thought explanation of the present invention and can not limit invention, claims indicate scope of the present invention, and scope of the present invention is not pointed out in above-mentioned explanation, therefore, any change in the implication suitable with claims of the present invention and scope, all should think to be included in the scope of claims.

Claims (2)

1. based on a LED technique for silver alloy wire, it is characterized in that, carry out according to following steps:
1) raw material prepares: adopt Ultrasonic Cleaning LED support, and dry, then by crystal-bonding adhesive water thawing;
2) die bond is produced: LED wafer be positioned over and scribble on the LED support of crystal-bonding adhesive;
3) crystal-bonding adhesive baking: LED support is sent in roasting stations and carry out crystal-bonding adhesive baking, make LED wafer be fixed on LED support;
4) bonding wire: on bonding equipment, the both positive and negative polarity of the both positive and negative polarity of LED wafer and LED support is electrically connected by silver alloy wire, in described silver alloy wire, gold content is 7-9%, silver content is 88-90%, the diameter of silver alloy wire is 0.9mil, the bonding parameter of LED wafer and alloy wire: bonding power 20-50mw, welding pressure 20-50gms, weld time 10-20ms, bonding region temperature 150-170 DEG C;
5) glue is put: utilize glue to be encapsulated by the semi-finished product that die bond, bonding wire complete;
6) toast: allow glue charge solidification, heat ageing is carried out to LED wafer simultaneously.
2. a kind of LED technique based on silver alloy wire according to claim 1, is characterized in that: described some glue step is carried out in 24 hours after bonding wire completes.
CN201510147636.3A 2015-03-31 2015-03-31 Light emitting diode (LED) packaging technology based on silver alloy wires CN104810450A (en)

Priority Applications (1)

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CN201510147636.3A CN104810450A (en) 2015-03-31 2015-03-31 Light emitting diode (LED) packaging technology based on silver alloy wires

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CN201510147636.3A CN104810450A (en) 2015-03-31 2015-03-31 Light emitting diode (LED) packaging technology based on silver alloy wires

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109326706A (en) * 2018-09-19 2019-02-12 北京大学东莞光电研究院 A kind of LED encapsulation method based on graphene alloy wire

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916810A (en) * 2010-08-06 2010-12-15 湖北匡通电子有限公司 SMD type LED encapsulation method
CN102148298A (en) * 2010-12-28 2011-08-10 广州市鸿利光电股份有限公司 Multipoint dispensing process and LED (light emitting diode) device
CN103000772A (en) * 2011-09-13 2013-03-27 复盛精密工业股份有限公司 Light emitting diode support structure manufacturing method
CN103311209A (en) * 2013-05-17 2013-09-18 矽品科技(苏州)有限公司 Silver-alloy welding wire
CN103789568A (en) * 2014-02-18 2014-05-14 浙江佳博科技股份有限公司 Alloy bonding wire, and preparation method and application thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916810A (en) * 2010-08-06 2010-12-15 湖北匡通电子有限公司 SMD type LED encapsulation method
CN102148298A (en) * 2010-12-28 2011-08-10 广州市鸿利光电股份有限公司 Multipoint dispensing process and LED (light emitting diode) device
CN103000772A (en) * 2011-09-13 2013-03-27 复盛精密工业股份有限公司 Light emitting diode support structure manufacturing method
CN103311209A (en) * 2013-05-17 2013-09-18 矽品科技(苏州)有限公司 Silver-alloy welding wire
CN103789568A (en) * 2014-02-18 2014-05-14 浙江佳博科技股份有限公司 Alloy bonding wire, and preparation method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109326706A (en) * 2018-09-19 2019-02-12 北京大学东莞光电研究院 A kind of LED encapsulation method based on graphene alloy wire

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