CN103311209A - Silver-alloy welding wire - Google Patents
Silver-alloy welding wire Download PDFInfo
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- CN103311209A CN103311209A CN2013101843293A CN201310184329A CN103311209A CN 103311209 A CN103311209 A CN 103311209A CN 2013101843293 A CN2013101843293 A CN 2013101843293A CN 201310184329 A CN201310184329 A CN 201310184329A CN 103311209 A CN103311209 A CN 103311209A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a silver-alloy welding wire. The diameter of the silver-alloy welding wire is 0.6mil-2.5mil, and the silver-alloy welding wire comprises the components in percent by mass: 88%-98% of silver, 2%-4% of palladium or 0%-8% of gold. By use of the silver-alloy welding wire, the cost is much lower than that of the traditional gold welding wire. The silver-alloy welding wire is not easily oxidized, the storage period of the silver-alloy welding wire is much longer than that of the existing copper welding wire, and simultaneously the silver-alloy welding wire disclosed by the invention has the advantages of good ductility, easy storage and high welding yield and the like. Due to the characteristics of strong heat reflection and heat elimination of the metallic silver in silver alloy, in the use process of a semiconductor packaging piece, the temperature of a chip can be easily reduced, and the service life of the chip can be prolonged. The silver-alloy welding wire disclosed by the invention has the advantages that by a welding method, the silver-alloy welding wire can be well bonded; and due to less hardness, silver-alloy metal balls formed by hot balls are not easy to cause damage to the chip or a welding pad in the bonding process. The silver-alloy welding wire disclosed by the invention can be applied in high-end package with high number of feet, and also can be completely applicable to the wire bonding process from the welding pad to the welding wire which is difficult for the copper wires to operate.
Description
Technical field
The present invention relates to a kind of silver alloy bonding wire and use its welding method, belong to the semiconductor packaging field.
Background technology
Along with electronic product to multi-functional, high-performance and microminiaturized development, the manufacturing of IC chip is required to improve constantly, finish the needed chip area of said function more and more less, cost is also more and more lower.When acquiring a certain degree, being semiconductor packages material requested and technique when substantially not having larger variation, the reduction of semiconductor packages cost becomes study hotspot.
Traditional encapsulation technology is taked the ultrasonic thermocompression bonding techniques, and the material of use mainly is gold thread.Gold thread is ductile, easily preserve, welding yields advantages of higher, but along with the continuous rise of global price of gold in recent years, the cost of semiconductor packages brought seriously influence, and unavoidably continues to increase packaging cost.Account for 30 percent of multilead encapsulation total cost with the one-tenth of gold thread and calculate, suppose that the profit that encapsulates manufacturing enterprise at present maintains about ten Percent, 0.33 times of the every raising of price of gold, the total cost of semiconductor packages will increase ten Percent.Therefore, carry out semiconductor packages with gold thread, because its expensive characteristics cause semiconductor package part more and more narrower in the range of application of electronic applications.
In the prior art, although occurred coming gold thread bonding in the alternative package process with copper wire bonding, even copper cash is compared with gold thread, have higher strength and stiffness and good machinery and electrology characteristic and in copper wire bonding metalwork growth also than the poor growth in the gold thread bonding many, can increase bonding stability and device performance, but the three large shortcomings of copper cash in real use procedure make its application development in semiconductor packages greatly limited: the one, and the hardness of copper cash is excessive, compare with gold thread and to be not easy distortion, so the easier defective chip of copper surface; The 2nd, copper is perishable and react to each other, and the copper oxidation reaction of burning the ball time limit at bonding wire can cause the size and shape of bond ball to change, and further reduces the success rate of bonding wire; The 3rd, the easy oxidation of copper cash, when using weld pad between weld pad during routing technique, the copper bump oxidation of planting ball is difficult to be combined with the second solder joint copper cash (Fig. 1).Therefore, a kind of cost is lower, and good welding performance, yields is high and be difficult for the long bonding wire material of oxidation, storage life becomes one of problem demanding prompt solution in the present semiconductor packaging.
Summary of the invention
The purpose of this invention is to provide a kind of silver alloy bonding wire purpose of the present invention that solves the problems of the technologies described above realizes by following technical proposals:
A kind of silver alloy bonding wire of the present invention, its diameter 0.6mil～2.5mil, its component is calculated in mass percent, and comprises the silver of 88 ﹪～98 ﹪, the palladium of 2 ﹪～4 ﹪ or the gold of 0 ﹪～8 ﹪.Silver is low-cost soft and high conductivity material, and is difficult for oxidizedly under the normal temperature, is main component; Palladium is inert metal, can control to weld rear altogether golden growth rate and completely cut off extraneous corrosive goods confrontation to be total to the infringement of gold, thereby significantly improve product reliability; Gold can form multiple altogether gold compound when welding, increase altogether golden intensity; Consider that gold is noble metal, therefore visual situation determines whether add.
Application of the present invention is implemented its remarkable technique effect is mainly reflected in:
1, silver alloy bonding wire cost of the present invention is far below traditional gold solder line, is difficult for the oxidized storage life to be longer than existing copper-weld wire, and has simultaneously good, the easy preservation of ductility, the welding yields advantages of higher of gold solder line;
2, heat reflection and the hot type owing to argent in the silver alloy removes and will see in the use procedure in semiconductor packages by force, can be conducive to reduce the temperature of chip, prolongs the useful life of chip;
3, can be with silver alloy bonding wire of the present invention bonding preferably by welding method of the present invention, burn the silver alloy Metal Ball hardness that ball forms less, in bonding process, be difficult for causing the damage of chip or weld pad, can be applicable to the high-end encapsulation of high pin number;
4, because silver alloy wire is difficult for oxidation, when using weld pad between weld pad during routing technique, the silver-colored projection of planting ball is easy to close with the silver-colored toe-in of the second solder joint, and complete applicable weld pad is to routing technique (as shown in Figures 2 and 3) between weld pad.
Following constipation closes accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is the result of use photo of copper wire welding in the prior art of the present invention;
Fig. 2, Fig. 3 are the result of use photo figure of silver alloy bonding wire in the preferred embodiment of the present invention.
Embodiment
The present invention will be described below in conjunction with accompanying drawing and specific embodiment, for embodiment product of the present invention or method are made the generality illustration, help to understand better the present invention, but can't limit the scope of the invention.Experimental technique described in the following embodiment if no special instructions, is conventional method; Described material if no special instructions, all can obtain from commercial channels.
Silver alloy bonding wire of the present invention, its diameter 0.6mil～2.5mil, 1mil equals mil; Its component is calculated in mass percent, and comprises the silver of 88 ﹪～98 ﹪, the palladium of 2 ﹪～4 ﹪ or the gold of 0 ﹪～8 ﹪.Silver is low-cost soft and high conductivity material, and is difficult for oxidizedly under the normal temperature, is main component; Palladium is inert metal, can control to weld rear altogether golden growth rate and completely cut off extraneous corrosive goods confrontation to be total to the infringement of gold, thereby significantly improve product reliability; Gold can form multiple altogether gold compound when welding, increase altogether golden intensity; Consider that gold is noble metal, therefore visual situation determines whether add.Use silver alloy bonding wire cost of the present invention far below traditional gold solder line.The inventor confirms through great many of experiments, the silver alloy that adopts component of the present invention to consist of, and its welding performance is excellent, tests as example take the thrust strength of 40 microns soldered balls of diameter, and the intensity of gold thread soldered ball is about 8 grams, and silver-colored wire bonding ball intensity can be brought up to more than 12 grams.Have the solder bonds profile good, be difficult for characteristics oxidized, that the storage life is longer than existing copper-weld wire, have simultaneously good, the easy preservation of ductility, the welding yields advantages of higher of gold solder line; And, owing to heat reflection and the hot type of argent in the silver alloy removes and will see in the use procedure in semiconductor packages by force, can be conducive to reduce the temperature of chip, prolong the useful life of chip.Can be with silver alloy bonding wire of the present invention bonding preferably by welding method of the present invention, burn the silver alloy Metal Ball hardness that ball forms less, in key and process, be difficult for causing the damage of chip or weld pad, can be applicable to the high-end encapsulation of high pin number.As shown in Figures 2 and 3, because silver alloy wire is difficult for oxidation, when using weld pad between weld pad during routing technique, the silver-colored projection of planting ball is easy to close with the silver-colored toe-in of the second solder joint, and complete applicable weld pad is to routing technique between weld pad.
Although the present invention discloses as above with aforesaid preferred embodiment; yet it is not to limit protection range of the present invention; any familiar alike technical staff; within not breaking away from the technology of the present invention principle, spirit and scope; when doing a little change and retouching, these changes and retouching also should be considered as protection scope of the present invention.
Claims (1)
1. silver alloy bonding wire, it is characterized in that: its diameter 0.6mil～2.5mil, its component is calculated in mass percent, and comprises the silver of 88 ﹪～98 ﹪, the palladium of 2 ﹪～4 ﹪ or the gold of 0 ﹪～8 ﹪.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101843293A CN103311209A (en) | 2013-05-17 | 2013-05-17 | Silver-alloy welding wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101843293A CN103311209A (en) | 2013-05-17 | 2013-05-17 | Silver-alloy welding wire |
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| CN103311209A true CN103311209A (en) | 2013-09-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013101843293A Pending CN103311209A (en) | 2013-05-17 | 2013-05-17 | Silver-alloy welding wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810450A (en) * | 2015-03-31 | 2015-07-29 | 长治虹源光电科技有限公司 | Light emitting diode (LED) packaging technology based on silver alloy wires |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
| US20090297391A1 (en) * | 2008-05-28 | 2009-12-03 | Lee Jun-Der | Manufacturing method for a silver alloy bonding wire and products thereof |
| CN101786154A (en) * | 2009-01-24 | 2010-07-28 | 李俊德 | Composite gold wire and manufacture method thereof |
-
2013
- 2013-05-17 CN CN2013101843293A patent/CN103311209A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080240975A1 (en) * | 2007-03-30 | 2008-10-02 | Mk Electron Co. Ltd. | Ag-based alloy wire for semiconductor package |
| US20090297391A1 (en) * | 2008-05-28 | 2009-12-03 | Lee Jun-Der | Manufacturing method for a silver alloy bonding wire and products thereof |
| CN101786154A (en) * | 2009-01-24 | 2010-07-28 | 李俊德 | Composite gold wire and manufacture method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810450A (en) * | 2015-03-31 | 2015-07-29 | 长治虹源光电科技有限公司 | Light emitting diode (LED) packaging technology based on silver alloy wires |
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Application publication date: 20130918 |