CN104882427A - Plastic packaging type IPM module electrical connection structure - Google Patents
Plastic packaging type IPM module electrical connection structure Download PDFInfo
- Publication number
- CN104882427A CN104882427A CN201410069246.4A CN201410069246A CN104882427A CN 104882427 A CN104882427 A CN 104882427A CN 201410069246 A CN201410069246 A CN 201410069246A CN 104882427 A CN104882427 A CN 104882427A
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- conductive film
- chip
- lead frame
- module
- electrical connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
The invention discloses a plastic packaging type IPM module electrical connection structure. By adopting a conductive film as the chip carrier, the structure makes the conventional structure characterized by using a lead frame as the carrier part saved and further optimizes the lead frame design. Meanwhile, a power chip and a driving chip are arranged on the same height parts of the conductive film. The distance between the chips is effectively shortened. Electrical connection among the conductive film and the chips is facilitated. The chips are pasted on the conductive film through silver paste. The technical steps of chip welding and lead bonding are no longer required. The module production efficiency can be effectively improved. Surface contacts among the chips and the conductive film make the contacting areas increased and guarantee the product flow passage capabilities, reliability, stability and safety. The module qualities are improved. The module service lifetime is further prolonged. The conductive film is made of soft materials. Therefore, the lead frame is not required to be designed to have a bending structure. The production cost of the whole module is lowered. Furthermore, the conductive film is relatively thin and achieves relatively good heat radiation performance.
Description
Technical field
The invention belongs to plastic sealed IPM and manufacture field, be specifically related to a kind of plastic sealed IPM modular electrical syndeton.
Background technology
Plastic sealed IPM(Intelligent Power Module; Intelligent Power Module), be by IGBT(insulated gate bipolar transistor) Novel control module that is integrated in one of chip and drive circuit, control circuit and overcurrent, under-voltage, short circuit, the protective circuit such as overheated.It is a kind of complexity, advanced power model, automatically can realize overcurrent, under-voltage, short circuit and the complicated protection function such as overheated, thus have intelligent characteristic.Simultaneously it has the advantages such as low cost, miniaturization, highly reliable, easy use, and be widely used in the fields such as frequency-conversion domestic electric appliances, inverter, Industry Control, Social benefit and economic benefit is very considerable.
For common plastic sealed IPM, its inside is made up of lead frame, chip, bonding line.In the application, the welding of chip, the bonding of lead-in wire are all the factors of serious limit product rate of finished products and production efficiency.At present in plastic sealed IPM module institute's extensive use be that IGBT, diode and driving chip are pasted on the lead frames by the mode of welding, then complete the electrical connection between them by bonding line, finally carry out injection moulding again.There is following problem in use in which:
(1) IGBT, diode and driving chip are fixedly welded on lead frame, welding procedure more complicated, and leadframe thickness is comparatively large, and be unfavorable for the heat radiation of chip, long-time overheated use easily causes the damage of chip, increase use cost.
(2) because the electrical connection between chip upper surface is generally coupled together by bonding line, but power chip (comprising IGBT, diode chip for backlight unit) is different with the height residing for driving chip in plastic sealed IPM, and driving chip and power chip is distant, this not only increases the difficulty of bonding, and adding the risk of bonding line inefficacy, reliability, through-current capability are poor.
(3) bonding of driving chip and IGBT, diode chip for backlight unit is distant, when injection moulding because the flowing of injection molding material likely can destroy bonding line.
(4) lead frame need carry out bending operation to it as the carrier of chip, and because lead frame material is comparatively hard, bending technique can increase the material cost of lead frame.
Therefore, in view of above problem, be necessary to propose a kind of novel plastic sealed IPM modular electrical syndeton, effectively can optimize the design of lead frame, reduce the distance of chip chamber, omit the processing step of chips welding and wire bonding simultaneously, enhance productivity, effectively ensure the through-current capability of product, reliability, stability and fail safe.
Summary of the invention
In view of this, the invention provides a kind of plastic sealed IPM modular electrical syndeton, to realize the design optimizing lead frame, reduce the distance of chip chamber, omit the processing step of chips welding and wire bonding simultaneously, enhance productivity, effectively ensure the object of the through-current capability of product, reliability, stability and fail safe.
The one plastic sealed IPM modular electrical syndeton that object according to the present invention proposes, comprise lead frame, igbt chip, diode chip for backlight unit and driving chip, this structure also comprises conductive film, described conductive film is setting up and down two-layer, described igbt chip, diode chip for backlight unit and driving chip are all arranged between described two-layer conductive film, and the two ends of Upper conductive film are fixedly connected on described lead frame;
Lower conductive film is for carrying fixing described igbt chip, diode chip for backlight unit and driving chip, and described Upper conductive film is used for the electrical connection between described igbt chip, diode chip for backlight unit, driving chip and lead frame.
Preferably, described conductive film and between described igbt chip, diode chip for backlight unit, driving chip and lead frame all by silver starch fit fix.
Preferably, described conductive film comprises internal circuit and outside film, and described outside film is insulating material.
Preferably, the bottom of described lower conductive film is also provided with thermally conductive insulating layer and fin.
Compared with prior art, the advantage of plastic sealed IPM modular electrical syndeton disclosed by the invention is: this structure, by adopting conductive film as the carrier of chip, saves the structure of lead frame as carrier part, optimizes the design of lead frame.Power chip and driving chip are arranged at the sustained height on conductive film simultaneously, effectively reduce the distance of chip chamber, be convenient to the electrical connection of conductive film and chip chamber.By adopting silver to starch chip attach on conductive film, eliminating the welding of chip and the processing step of wire bonding, effectively can improve the production efficiency of module; And due between chip with conductive film for face contacts, increase contact area, ensure the through-current capability of product, reliability, stability and fail safe, improve module quality and useful life.
In addition, because conductive film is soft material, therefore lead frame need not be designed to bending structure, can reduce the production cost of whole module like this.And conductive film thinner thickness, good heat dispersion performance.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of plastic sealed IPM modular electrical syndeton in prior art.
Fig. 2 is the schematic diagram of plastic sealed IPM modular electrical syndeton disclosed by the invention.
The title of the numeral in figure or the corresponding component representated by letter:
1, lead frame 2, Upper conductive film 3, lower conductive film 4, igbt chip 5, diode chip for backlight unit 6, driving chip 7, thermally conductive insulating layer 8, fin 9, bonding line
Embodiment
At present, in plastic sealed IPM module, institute's extensive use is IGBT, diode and the driving chip mode by welding pasted on the lead frames, then completes the electrical connection between them by bonding line, finally carries out injection moulding again.Welding procedure more complicated, and leadframe thickness is comparatively large, is unfavorable for the heat radiation of chip.Driving chip is different from the height residing for power chip, and bonding difficulty is larger.In addition, wire bonding less stable, fragile during injection moulding, add the risk that bonding line lost efficacy.Reliability, through-current capability are poor.In addition, lead frame needs bending process, and operating efficiency is lower, adds production cost simultaneously.
The present invention is directed to deficiency of the prior art, the invention provides a kind of plastic sealed IPM modular electrical syndeton, to realize the design optimizing lead frame, reduce the distance between driving chip and power chip, omit the processing step of chips welding and wire bonding simultaneously, enhance productivity, effectively ensure the object of the through-current capability of product, reliability, stability and fail safe.
To be clearly and completely described technical scheme of the present invention by embodiment below.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 2, a kind of plastic sealed IPM modular electrical syndeton, comprise lead frame 1, igbt chip 4, diode chip for backlight unit 5 and driving chip 6, this structure also comprises conductive film, conductive film is setting up and down two-layer, igbt chip 4, diode chip for backlight unit 5 and driving chip 6 are all arranged between two-layer conductive film, and the two ends of Upper conductive film 2 are fixedly connected on lead frame 1.
Lower conductive film 3 is for carrying fixing igbt chip 4, diode chip for backlight unit 5 and driving chip 6, and conductive film and igbt chip, diode chip for backlight unit, driving chip and lead frame are all starched to fit by silver and fixed.By selecting conductive film alternative lead frame or DBC plate etc. as the carrier of chip, again conductive film is fitted on the lead frames in the same way, such electrical connection is the mode of face contact, and conductive film compare lead frame and DBC plate thickness want much thin, therefore radiating effect is relatively better.
Meanwhile, power chip and driving chip can be arranged at the sustained height in lower conductive film, effectively reduce the distance of chip chamber.The bottom of chip is attached on conductive film by adopting silver slurry, eliminates the welding procedure of chip, can greatly improve the production efficiency of plastic sealed IPM module.
Upper conductive film 2 is for the electrical connection between igbt chip 4, diode chip for backlight unit 5, driving chip 6 and lead frame.Conductive film and chip chamber are that face contacts, and its stability of electrical connection that bonding line more of the prior art realizes, reliability are better, and through-current capability is stronger.
Conductive film comprises internal circuit and outside film, and outside film is insulating material.
The bottom of lower conductive film 3 is also provided with thermally conductive insulating layer 7 and fin 8, improves the radiating efficiency of module.
In addition, the thickness of conductive film can be and is less than 0.5mm etc., and concrete gauge needs according to use and determines, and does not limit at this.
The invention discloses a kind of plastic sealed IPM modular electrical syndeton, this structure, by adopting conductive film as the carrier of chip, saves the structure of lead frame as carrier part, optimizes the design of lead frame.Power chip and driving chip are arranged at the sustained height on conductive film simultaneously, effectively reduce the distance of chip chamber, be convenient to the electrical connection of conductive film and chip chamber.By adopting silver to starch chip attach on conductive film, eliminating the welding of chip and the processing step of wire bonding, effectively can improve the production efficiency of module; And due between chip with conductive film for face contacts, increase contact area, ensure the through-current capability of product, reliability, stability and fail safe, improve module quality and useful life.
In addition, because conductive film is soft material, therefore lead frame need not be designed to bending structure, can reduce the production cost of whole module like this.And conductive film thinner thickness, good heat dispersion performance.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (4)
1. a plastic sealed IPM modular electrical syndeton, comprise lead frame, igbt chip, diode chip for backlight unit and driving chip, it is characterized in that, this structure also comprises conductive film, described conductive film is setting up and down two-layer, described igbt chip, diode chip for backlight unit and driving chip are all arranged between described two-layer conductive film, and the two ends of Upper conductive film are fixedly connected on described lead frame;
Lower conductive film is for carrying fixing described igbt chip, diode chip for backlight unit and driving chip, and described Upper conductive film is used for the electrical connection between described igbt chip, diode chip for backlight unit, driving chip and lead frame.
2. plastic sealed IPM modular electrical syndeton as claimed in claim 1, is characterized in that, described conductive film and between described igbt chip, diode chip for backlight unit, driving chip and lead frame all by silver starch fit fix.
3. plastic sealed IPM modular electrical syndeton as claimed in claim 1, it is characterized in that, described conductive film comprises internal circuit and outside film, and described outside film is insulating material.
4. plastic sealed IPM modular electrical syndeton as claimed in claim 1, it is characterized in that, the bottom of described lower conductive film is also provided with thermally conductive insulating layer and fin.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410069246.4A CN104882427B (en) | 2014-02-27 | 2014-02-27 | A kind of plastic sealed IPM modular electricals attachment structure |
| PCT/CN2014/082895 WO2015127753A1 (en) | 2014-02-27 | 2014-07-24 | Electrical connection structure for plastic package type ipm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410069246.4A CN104882427B (en) | 2014-02-27 | 2014-02-27 | A kind of plastic sealed IPM modular electricals attachment structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104882427A true CN104882427A (en) | 2015-09-02 |
| CN104882427B CN104882427B (en) | 2017-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410069246.4A Active CN104882427B (en) | 2014-02-27 | 2014-02-27 | A kind of plastic sealed IPM modular electricals attachment structure |
Country Status (2)
| Country | Link |
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| CN (1) | CN104882427B (en) |
| WO (1) | WO2015127753A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321134A (en) * | 2018-04-09 | 2018-07-24 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density |
| CN109951982A (en) * | 2019-04-23 | 2019-06-28 | 台州思碳科技有限公司 | A kind of the power supply connecting structure and air cleaning unit of thin film circuit |
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| CN101807531A (en) * | 2010-03-30 | 2010-08-18 | 上海凯虹电子有限公司 | Ultra-thin chip packaging method and packaged body |
| CN102315135A (en) * | 2010-07-09 | 2012-01-11 | 联咏科技股份有限公司 | Chip package and manufacturing process thereof |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| CN103367305A (en) * | 2013-07-31 | 2013-10-23 | 西安永电电气有限责任公司 | Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device |
| US8604610B1 (en) * | 2012-06-13 | 2013-12-10 | Fairchild Semiconductor Corporation | Flexible power module semiconductor packages |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5765530B2 (en) * | 2011-04-22 | 2015-08-19 | 双信電機株式会社 | Power fuse |
-
2014
- 2014-02-27 CN CN201410069246.4A patent/CN104882427B/en active Active
- 2014-07-24 WO PCT/CN2014/082895 patent/WO2015127753A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807531A (en) * | 2010-03-30 | 2010-08-18 | 上海凯虹电子有限公司 | Ultra-thin chip packaging method and packaged body |
| CN102315135A (en) * | 2010-07-09 | 2012-01-11 | 联咏科技股份有限公司 | Chip package and manufacturing process thereof |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| US8604610B1 (en) * | 2012-06-13 | 2013-12-10 | Fairchild Semiconductor Corporation | Flexible power module semiconductor packages |
| CN103367305A (en) * | 2013-07-31 | 2013-10-23 | 西安永电电气有限责任公司 | Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321134A (en) * | 2018-04-09 | 2018-07-24 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density |
| CN109951982A (en) * | 2019-04-23 | 2019-06-28 | 台州思碳科技有限公司 | A kind of the power supply connecting structure and air cleaning unit of thin film circuit |
| CN109951982B (en) * | 2019-04-23 | 2023-12-22 | 浙江思碳亿芯环保技术有限公司 | Power connection structure of thin film circuit and air purification device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015127753A1 (en) | 2015-09-03 |
| CN104882427B (en) | 2017-10-27 |
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Address after: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd. Address before: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee before: Xi'an Yongdian Electric Co., Ltd. |
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