CN102130067B - Surface palladium-plated bonding brass wire - Google Patents

Surface palladium-plated bonding brass wire Download PDF

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CN102130067B
CN102130067B CN2010106207163A CN201010620716A CN102130067B CN 102130067 B CN102130067 B CN 102130067B CN 2010106207163 A CN2010106207163 A CN 2010106207163A CN 201010620716 A CN201010620716 A CN 201010620716A CN 102130067 B CN102130067 B CN 102130067B
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palladium
wire
copper
plated
brass
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CN102130067A (en
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房跃波
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SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO Ltd
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SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

The invention discloses a surface palladium-plated bonding brass wire comprising a brass core taking brass as a main component and a palladium layer formed by plating on the brass core. The surface palladium-plated bonding brass wire is characterized in that trace metal for improving the extension performance is added in the brass core taking the brass as the main component; a single crystal is smelt and drawn to form a brass alloy core wire; the palladium is plated on the surface of the brass alloy core wire; and the surface palladium-plated bonding brass wire is formed in a superfine drawing manner. Compared with the prior art, the invention has the benefits that the surface palladium-plated bonding brass wire has better final plasticity deformation capability in the subsequent superfine drawing process without intermediate annealing; the percentage elongation of the surface palladium-plated bonding brass wire is at least 11 percent; the deformation of a palladium-plated layer in the pressure processing flow is consistent; the surface of the surface palladium-plated bonding brass wire is uniform, compact and complete, which is especially beneficial to full deformation during welding bonding, and thus the pulling strength and the reliability are improved. In addition, the cost of products can be controlled to be about 6 yuan/100 meters and the products have high cost performance.

Description

A kind of surperficial palladium-plated bonded copper wire
Technical field
The present invention relates to bonding wire, particularly relate to a kind of surperficial palladium-plated bonded copper wire.
Background technology
Chinese patent CN100359657C has announced a kind of " bonding line and the IC apparatus that uses this bonding line "; This bonding line comprises the core of copper as main material; The dissimilar metal layer that comprises metal outside the copper removal and the coating that on said core, form, said coating comprise have fusing point be higher than copper fusing point anti-oxidation metal and on said dissimilar metal layer, form.Said bonding line can be formed on the ball that has real circle on the wide region of bulb diameter, and can use the manufacturing of plating technology and can not make the plating bath deterioration, and said coating is good to the adhesiveness of said core.But, in follow-up pressure processing process, can not guarantee the integrality of coating, when diameter reaches 0.05mm when stretching; Coating is destroyed, and, when between copper core and palladium layer, not doing preparatory Gold plated Layer; Electroplate liquid can go bad because of copper dissolves in electroplate liquid very soon, and then influences electroplating quality.
Summary of the invention
Technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, and a kind of surperficial palladium-plated bonded copper wire is provided.
Technical problem of the present invention solves through following technical scheme.
The palladium-plated copper bonding wire, copper components include copper-based material, and material of the copper plating is formed on the palladium layer.
The characteristics of this surperficial palladium-plated bonded copper wire are:
By copper is that the copper core of major constituent adds the trace meter improve extension property, and melting is drawn into the copper alloy heart yearn and ultra-finely again behind surface plating palladium is stretched as surperficial palladium-plated bonded copper wire through monocrystalline.
Technical problem of the present invention solves through following further technical scheme.
The main component material is a copper purity of at least 99.9980% of the high-copper alloys.
The said trace meter that improves extension property and with the weight part per million (parts per million, initialism are ppm) of the copper core of major constituent respectively as follows:
Calcium: 3～5ppm;
Magnesium: 1～3ppm;
Aluminium: 2～4ppm;
Tin: 1～3ppm.The copper alloy heart yearn that said monocrystalline melting is drawn into has pure monoclinic crystal structure, adds the trace meter that improves extension property, can obviously improve the extension property of single crystal Cu alloy core wire.Ask in follow-up ultra-fine drawing process, needn't carrying out that annealing just has final preferably plastic deformation ability; Dynamic online annealing back elongation through the band inert gas shielding can reach more than 12%; Wherein diameter is that the elongation of the ultra-fine bonding brass wire below the Ф 23 μ m is at least 11%; Fully be out of shape when helping solder bonds, improve bank rigidity and height, improve pull-off force and reliability.
The palladium layer that said plating forms is in vacuum coating equipment, to carry out the palladium layer that dynamic continuous magnetron sputtering vacuum coating forms.
The vacuum degree of said vacuum coating equipment is 10 -1～10Pa.
The cathode targets of said vacuum coating equipment be the gold and palladium in a kind of.Can make sputtering yield reach 0.1～1.0 μ m/min, its plated with palladium layer adhesive force is much larger than the coating of chemical strike plating, and the distortion unanimity is evenly surperficial when follow-up stretcher strain, compact and complete.
Technical problem of the present invention solves through following further again technical scheme.
Preferably, the material of the main component material is 6N copper Cu (Six? Nines? Coppe = 99.9999%), i.e. a high purity of 99.9999% pure copper.
The diameter of the copper alloy heart yearn of said monocrystalline melting after-drawing is Ф 0.05～0.25mm, belongs to ultra-fine core.
The palladium layer thickness that said plating forms is 0.1～3.0 μ m.
The said ultra-fine final finished diameter that is stretched as surperficial palladium-plated bonded copper wire is Ф 18～50 μ m.
The beneficial effect of the present invention and prior art contrast is:
Surperficial palladium-plated bonded copper wire of the present invention needn't carry out intermediate annealing and just have final preferably plastic deformation ability in follow-up ultra-fine drawing process, its elongation is at least 11%, and plating palladium layer is out of shape consistent in the pressure processing process; The surface is even, and compact and complete fully is out of shape when especially helping solder bonds; Improve pull-off force and reliability; And product cost can be controlled at about 6 yuan/hundred meters, and cost performance is high.
Embodiment
The present invention will be described below in conjunction with embodiment.
A surface palladium-copper bonding wire, copper components include copper-based material, and material on the copper plating layer is formed of palladium.By copper is that the copper core of major constituent adds the trace meter improve extension property, and the copper core that melting is drawn into through monocrystalline also ultra-finely again behind surface plating palladium is stretched as surperficial palladium-plated bonded copper wire.
A main component material is a copper of high purity of 99.9988% pure copper alloy material, select high 6N copper raw material, adding calcium 5ppm, 2.3ppm magnesium, 3ppm 2.8ppm aluminum and tin for crystal melting, after Chemical analysis of the composition by weight per million is as follows:
Copper 99998.00 * 10 -6
Iron 0.05 * 10 -6
Silicon 0.08 * 10 -6:
Sulphur 0.01 * 10 -6
Silver 0.10 * 10 -6
Arsenic 0.01 * 10 -6
Beryllium 0.03 * 10 -6
Other is 0.12 * 10 years old -6
Improve extension property trace meter and with the weight part per million of the copper core of major constituent respectively as follows:
Calcium 4.20 * 10 -6
Magnesium 2.00 * 10 -6
Aluminium 2.80 * 10 -6
Tin 2.60 * 10 -6
The diameter that monocrystalline melting stretching forms is that the single crystal Cu alloy core wire of Ф 0.10mm is wound on the stainless steel spool, is sent to carry out dynamically magnetic control vacuum sputtering continuously in the vacuum coating equipment, and forming thickness at monocrystalline copper wire coating surface is the palladium layer of 0.36 μ m.
The vacuum degree of vacuum coating equipment is 10 -1～10Pa, cathode targets are high-purity palladium piece of 5N, are of a size of 600mm * 150mm * 5mm (length * wide * height).
The copper alloy heart yearn that the surface is plated palladium carries out ultra-fine stretching, and obtaining final diameter is the surperficial palladium-plated bonded copper wire finished product of Ф 20 μ m.
80～100 times metallomicroscope is adopted in the coating surface inspection, and the result is following:
The palladium coating on surface is light evenly, and compact and complete, comes off at flawless, peeling.
Surperficial palladium-plated bonded copper wire is carried out dynamic continuous annealing, and annealing temperature is 468 ± 0.5 ℃, four-temperature region control, warm area total length 1200mm, annealing speed 1m/sec.
Tension tester is adopted in annealing back Mechanics Performance Testing, and the result is following:
Pull-off force: 7.62g (standard value is 5g);
Elongation: 13.46% (standard value is 10～14%);
Tensile strength: 240MPa (standard value for 210MPa) at least;
Ball hardness (Hv0.002) behind the burning ball: 48;
Line hardness (Hv0.01): 98;
Resistivity: 1.72 μ Ω * cm;
Blowout current: 0.98A (arc length 3mm);
Balling-up characteristic: spherical perfect (5N nitrogen burns the ball protection down, sphere diameter 40 μ m).
It is the bonding equipment of ASM EAGLE60 that model is adopted in the bonding wire test, and bonding wire product code name is SOP16, and the result is following:
First solder joint is normal fully, does not have obvious metal aluminium lamination and extrudes, and no crater occurs;
The second solder joint fish tail shape is opened fully, seems to be gold thread, and pulling force is normal;
Bonding wire pulling force and the test of ball thrust, the result is following:
Bonding wire pulling force: 8～9g (standard value for 5g) at least;
Ball thrust: 31～36g (standard value for 20g) at least;
Push the ball after the test, chip surface has enough residual.
More than multinomial test result show: the surperficial palladium-plated bonded copper wire of this embodiment can satisfy the high-end bonding requirement of modern encapsulation.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.Those of ordinary skill for technical field under the present invention; Under the prerequisite that does not break away from the present invention's design, make some alternative or obvious modification that are equal to; And performance or purposes are identical, all should be regarded as belonging to the scope of patent protection that the present invention is confirmed by claims of being submitted to.

Claims (7)

1. surperficial palladium-plated bonded copper wire; Comprise that copper is the copper core of major constituent; And the palladium layer that plating forms on said copper core; By copper is the trace meter of copper core interpolation improvement extension property of major constituent, and melting is drawn into the copper alloy heart yearn and the ultra-fine again bonding brass wire that is stretched as behind surface plating palladium through monocrystalline; The copper core raw material of said major constituent is that purity is 99.9999% high purity copper, it is characterized in that:
The said trace meter that improves extension property and with the weight part per million (parts per million, initialism are ppm) of the copper core of major constituent respectively as follows:
Calcium: 3～5ppm;
Magnesium: 1～3ppm;
Aluminium: 2～4ppm;
Tin: 1～3ppm.
2. surperficial palladium-plated bonded copper wire as claimed in claim 1 is characterized in that:
The palladium layer that said plating forms is in vacuum coating equipment, to carry out the palladium layer that dynamic continuous magnetron sputtering vacuum coating forms.
3. surperficial palladium-plated bonded copper wire as claimed in claim 2 is characterized in that:
The vacuum degree of said vacuum coating equipment is 10 -1～10Pa.
4. surperficial palladium-plated bonded copper wire as claimed in claim 3 is characterized in that:
The cathode targets of said vacuum coating equipment be the gold and palladium in a kind of.
5. surperficial palladium-plated bonded copper wire as claimed in claim 4 is characterized in that:
The diameter of the copper alloy heart yearn of said monocrystalline melting after-drawing is Φ 0.05～0.25mm.
6. surperficial palladium-plated bonded copper wire as claimed in claim 5 is characterized in that:
The palladium layer thickness that said plating forms is 0.1～3.0 μ m.
7. surperficial palladium-plated bonded copper wire as claimed in claim 6 is characterized in that:
The said ultra-fine final finished diameter that is stretched as surperficial palladium-plated bonded copper wire is Φ 18～50 μ m.
CN2010106207163A 2010-12-31 2010-12-31 Surface palladium-plated bonding brass wire Active CN102130067B (en)

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CN102263038A (en) * 2011-08-19 2011-11-30 张若京 Surface treatment technology of bonding copper wire in production process
CN103943584A (en) * 2013-01-18 2014-07-23 日月光半导体制造股份有限公司 Bonding wire for semiconductor device
CN103219312B (en) * 2013-03-01 2015-12-23 溧阳市虹翔机械制造有限公司 A kind ofly plate the gold-plated two coating bonding brass wires of palladium
CN103219249B (en) * 2013-03-01 2016-01-06 溧阳市虹翔机械制造有限公司 A kind of manufacture method of plating the gold-plated two coating bonding brass wires of palladium
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CN104835797B (en) * 2015-03-23 2017-09-26 辽宁凯立尔电子科技有限公司 A kind of copper palladium-silver bonding wire and preparation method thereof
CN104810457A (en) * 2015-03-31 2015-07-29 长治虹源光电科技有限公司 Light emitting diode (LED) packaging technology based on palladium plated copper wire
CN106282619B (en) * 2015-05-18 2018-04-27 吕传盛 The aluminium base wire rod of abrasion performance high intensity without coating and preparation method thereof
DE112015004422B4 (en) 2015-06-15 2020-02-13 Nippon Micrometal Corporation Bond wire for semiconductor device
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SG10201600329SA (en) * 2016-01-15 2017-08-30 Heraeus Materials Singapore Pte Ltd Coated wire
CN106086962A (en) * 2016-06-06 2016-11-09 上海铭沣半导体科技有限公司 A kind of production technology encapsulated with gold-plated palladium linking copper wire
CN109457143A (en) * 2018-10-30 2019-03-12 深圳粤通应用材料有限公司 A kind of pure nickel plating palladium high-temperature electric conduction silk and preparation method thereof
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CN111180406A (en) * 2020-01-04 2020-05-19 深圳金斯达应用材料有限公司 Alloy palladium coating bonding material

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