CN108598058A - One Albatra metal bonding wire and its manufacturing method - Google Patents
One Albatra metal bonding wire and its manufacturing method Download PDFInfo
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
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- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
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Abstract
One Albatra metal bonding wire, it is characterised in that contain Pd 0.1 4% by weight, 1 300 ppm of trace additives, surplus is copper；The trace additives are one kind or in which two or more combinations in Ca, In, Co, Be, Ga, Mg, Ni, Pt and Al.The present invention also provides a kind of manufacturing methods of above-mentioned copper alloy bonding wire.The copper alloy bonding wire of the present invention has the advantages that：（1）With excellent workability（CUP electrodes lower circuit will not be broken or puncture）And reliability；（2）Anti-aging property is good, improves reliability of the encapsulating products in thermal shock test；（3）There are lower wire rod hardness, HAZ length that can significantly reduce the camber of routing down to 50 um；（4）Preferable is inhibited to copper aluminium Jie's metallic compound；（5）Good zygosity can be provided, effectively aqueous vapor is prevented to immerse interface, ball lift problem under IC hot and humid environments can be improved；（6）Cost is relatively low, and does not have electroplating process, does not pollute discharge.
Description
Technical field
The present invention relates to the bonding wires of IC, LED encapsulation, and in particular to an Albatra metal bonding wire and its manufacturing method.
Background technology
Bonding wire（Bonding wire, also known as bonding line）It is connection chip and outer enclosure substrate（substrate）With/
Or multilayer circuit board（PCB）Main connection type.The development trend of bonding wire, from the line of production, mainly line footpath is subtle
Change, the high workshop service life（floor life）And high spool length；Chemically on ingredient, mainly there is copper wire（Including bare copper wire, plating
Palladium copper wire dodges gold plating palladium copper wire）Significantly replace gold thread in semiconductor applications, and silver wire and silver alloy wire are in LED and part
IC package applies upper substitution gold thread.Due to the demand for development of miniaturization of electronic products and thin thinning, semicon industry passes through chip
Thickness be thinned (Wafer thinning), encapsulation using chip stack (Die stacking), flip-chip (flip chip),
Wafer-level packaging（wafer level packaging）, the methods of 2.5D and 3D encapsulation cope with, however traditional bonding packaging
（wire bonding）It is still mainstream packing forms.
It is existing bonding wire as main component made mainly with copper to have pure copper wire and plating palladium gold-plated copper wires.Pure copper wire has good
Good workability and lower cost, but anti-aging property and the ability of high-temp resisting high-humidity resisting are poor, and reliability is relatively low.It is gold-plated to plate palladium
Copper wire includes core wire, the palladium pre-plating layer being coated on outside core wire and the golden clad being coated on outside palladium pre-plating layer, core wire are adopted
It is made of fine copper；Plating palladium gold-plated copper wires need to coat the thicker palladium preplating of thickness to ensure good workability and reliability
Layer and golden clad, cost of material is high, and manufacturing process is also complex, so that manufacturing cost is excessively high, lacks the market competitiveness.
Invention content
Technical problem to be solved by the invention is to provide an Albatra metal bonding wire and this Albatra metal bonding wires
Manufacturing method, this Albatra metal bonding wire has excellent workability and reliability, and cost is relatively low.The technical solution of use is such as
Under：
One Albatra metal bonding wire, it is characterised in that contain Pd 0.1-4%, trace additives 1-300 ppm by weight, it is remaining
Amount is copper；The trace additives are one kind in Ca, In, Co, Be, Ga, Mg, Ni, Pt and Al or in which two or more
Combination.
It is preferred that the weight percent content of Pd is 0.5-2% in above-mentioned copper alloy bonding wire.
It is preferred that a diameter of 15-40um of above-mentioned copper alloy bonding wire.
In the copper alloy bonding wire of the present invention, the palladium of content 0.1-4% is added in core wire（Pd）, wire rod can be effectively improved
Anti-aging property, improve reliability of the encapsulating products in thermal shock test.Suitable trace additives are improving line
The mechanical performance of material, wherein Ca, In, Ga, Mg, Ni can effectively promote the bonding wire workability of billon, can enhance wire rod and chip
And the adhesion property of substrate, it is promoted and trusts performance；Co, Be, Pt, Al etc. can improve the recrystallization temperature of billon wire rod, be promoted
Wire rod fatigue durability in a high temperauture environment effectively reduces the probability of neck broken string.
The present invention also provides a kind of manufacturing methods of above-mentioned copper alloy bonding wire, it is characterised in that includes the following steps：
（1）Founding：Pd and trace additives are added in copper raw material in proportion, continuously draw casting by vacuum melting and orientation
Technique obtains a diameter of 6-8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 50-280um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Or
Person's nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, is moved back
Rate is 60-120m/min at top speed；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, and the copper for obtaining a diameter of 15-40um closes
Gold thread；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and N is used in annealing process2Or nitrogen
Hydrogen gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, annealing speed
Rate is 60-120m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 20-30 DEG C, obtains required copper alloy bonding wire.
It is preferred that above-mentioned steps（3）And step（5）The nitrogen and hydrogen mixture of use by 5% (volume) H2With 95% (volume)
N2Composition.
The copper alloy bonding wire of the present invention compared with prior art, has the advantages that：
（1）Palladium and trace additives are uniformly distributed in Copper base material in copper alloy bonding wire, and palladium atom is in routing and reliability
Processing procedure can uniformly be spread, and copper alloy bonding wire is made to have excellent workability（CUP (Circuit Under Pad) electrode lower layer
Circuit will not be broken or puncture）And reliability；
（2）Anti-aging property is good, improves reliability of the encapsulating products in thermal shock test；
（3）There are lower wire rod hardness, HAZ（Heat affected area）Length can significantly reduce the camber of routing down to 50 um；
（4）Preferable is inhibited to copper-aluminium Jie's metallic compound；
（5）Good zygosity can be provided, effectively aqueous vapor is prevented to immerse interface, gold goal under IC hot and humid environments can be improved
It falls off（ball lift）Problem；
（6）Cost is relatively low, can reduce cost 20-30% relative to plating palladium gold-plated copper wires, and because not having electroplating process, remove
It reduces outside cost, does not pollute discharge, it is extremely friendly to environment.
Specific implementation mode
Embodiment 1
The copper alloy bonding wire of the present embodiment contains Pd 2%, Ca 50ppm, Be 25 ppm, In 40ppm, surplus by weight
For copper.
The manufacturing method of above-mentioned copper alloy bonding wire includes the following steps：
（1）Founding：Pd, Ca, Be and In are added in copper raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 200um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 900mm, and annealing temperature is 450 DEG C, annealing rate 80m/min；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, obtains a diameter of 15-40um（Such as
20um）Copper alloy wire；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and N is used in annealing process2Come as
Annealing atmosphere, annealing furnace effective length are 900mm, and annealing temperature is 450 DEG C, annealing rate 80m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 25 DEG C, obtains required copper alloy bonding wire.
Embodiment 2
The copper alloy bonding wire of the present embodiment contains Pd 4% by weight, and 2 ppm of Mg, surplus is copper.
The manufacturing method of above-mentioned copper alloy bonding wire includes the following steps：
（1）Founding：Pd and Mg are added in copper raw material in proportion, continuously draws casting process by vacuum melting and orientation, obtains
A diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 100um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, nitrogen hydrogen is used in annealing process
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 600mm, and annealing temperature is 600 DEG C, annealing rate 60m/min；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, obtains a diameter of 15-40um（Such as
20um）Copper alloy wire；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and is mixed using nitrogen hydrogen in annealing process
Gas comes as annealing atmosphere, and annealing furnace effective length is 1000mm, and annealing temperature is 350 DEG C, annealing rate 80m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 20 DEG C, obtains required copper alloy bonding wire.
Above-mentioned steps（3）And step（5）The nitrogen and hydrogen mixture of use by 5% (volume) H2With the N of 95% (volume)2Group
At.
Embodiment 3
The copper alloy bonding wire of the present embodiment contains Pd 0.6%, Ni 20 ppm, Co 10 ppm of 20 ppm, Al by weight,
Surplus is copper.
The manufacturing method of above-mentioned copper alloy bonding wire includes the following steps：
（1）Founding：Pd, Ni, Co and Al are added in copper raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 280um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 800mm, and annealing temperature is 400 DEG C, annealing rate 100m/min；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, obtains a diameter of 15-40um（Such as
20um）Copper alloy wire；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and N is used in annealing process2Come as
Annealing atmosphere, annealing furnace effective length are 600mm, and annealing temperature is 500 DEG C, annealing rate 60m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 30 DEG C, obtains required copper alloy bonding wire.
Embodiment 4
The copper alloy bonding wire of the present embodiment contains Pd 1%, Ga 50ppm, Al 20ppm, Ca 20ppm, surplus by weight
For copper.
The manufacturing method of above-mentioned copper alloy bonding wire includes the following steps：
（1）Founding：Pd, Ga, Al and Ca are added in copper raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 180um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Come
As annealing atmosphere, annealing furnace effective length is 700mm, and annealing temperature is 400 DEG C, annealing rate 70m/min；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, obtains a diameter of 15-40um（Such as
20um）Copper alloy wire；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and N is used in annealing process2Come as
Annealing atmosphere, annealing furnace effective length are 800mm, and annealing temperature is 500 DEG C, annealing rate 80m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 20 DEG C, obtains required copper alloy bonding wire.
Embodiment 5
The copper alloy bonding wire of the present embodiment contains Pd 0.2%, Pt 160ppm, Co 70ppm, Ga 50ppm by weight, remaining
Amount is copper.
The manufacturing method of above-mentioned copper alloy bonding wire includes the following steps：
（1）Founding：Pd, Pt, Co and Ga are added in copper raw material in proportion, continuously draw foundry work by vacuum melting and orientation
Skill obtains a diameter of 6 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 150um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, nitrogen hydrogen is used in annealing process
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 800mm, and annealing temperature is 600 DEG C, annealing rate 120m/
min；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, obtains a diameter of 15-40um（Such as
20um）Copper alloy wire；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and is mixed using nitrogen hydrogen in annealing process
Gas comes as annealing atmosphere, and annealing furnace effective length is 700mm, and annealing temperature is 600 DEG C, annealing rate 100m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 30 DEG C, obtains required copper alloy bonding wire.
Above-mentioned steps（3）And step（5）The nitrogen and hydrogen mixture of use by 5% (volume) H2With the N of 95% (volume)2Group
At.
The copper alloy bonding wire of 1-5 of the embodiment of the present invention is tested for the property, test method and test result is as follows：
1, high temperature and humidity test method and condition
A. temperature： 85℃；Humidity：85% R.H；
B. the period：500 hours (taking out one group of sample within every 24 hours to be tested)；
C. not encapsulating after routing.
Total number of samples amount after pure copper wire, plating palladium gold-plated copper wires and embodiment 1-5 copper alloy bonding wire routings is respectively 170
It is a, it is divided into 17 groups, every group of each 10 sample is placed in hot and humid environment, is taken out one group of sample within every 24 hours and is tested（Into
Row current vs voltage curve is tested and disconnected short-circuit test, to judge whether to fail）, test result is as follows shown in table 1.It is tested
After find：Plating palladium gold-plated copper wires, embodiment 1-5 copper alloy bonding wire routing after sample after 500 hours still without going out
Now fail；And pure copper wire fails after 288 hours.Test result shows that the high temperature resistant of copper alloy bonding wire is high
Wet ability is suitable with plating palladium gold-plated copper wires, and far superior to pure copper wire.
Table 1
In table 1, denominator indicates that every group of sample number, molecule indicate every group of sample fails number.
2, anti-aging property
Embodiment 1-5 and traditional copper alloy bonding silk reliability difference mainly in thermal shock part.Specific degradation item
Part such as table 2.Experiment packing forms be LED encapsulation in SMD2835, BSOB routings, packaging silicon rubber use DOW CORNING OE6650,
For packaged sample after each thermal shock for completing 50 cycles, seeing whether can also be electric bright, records the number for the dead lamp that fails.
Table 2
| Test condition | Duration (Hour)/bout (Cycle) |
| 8 warm area standard circumfluences weld (265 DEG C) | 1 |
| - 40 DEG C of * 30min-100 DEG C * 30min (conversion time is less than 20 seconds) | 50/100/…/500 |
Experimental result（As shown in table 3）：Embodiment 1-5 copper alloy bonding wires be all subjected in senile experiment 200-300 bouts with
On thermal shock, and pure copper wire can only be subjected to the thermal shock of 150 bouts in senile experiment.
Table 3
| Sample sets | Aging bout Number |
| Traditional pure copper wire bonding wire | 150 |
| 1 copper alloy bonding wire of embodiment | 300 |
| 2 copper alloy bonding wire of embodiment | 300 |
| 3 copper alloy bonding wire of embodiment | 200 |
| 4 copper alloy bonding wire of embodiment | 250 |
| 5 copper alloy bonding wire of embodiment | 200 |
3, two weldering routing operation window
The routing ability of copper alloy bonding wire is as follows；Embodiment 1-5 copper alloy bonding wire routing parameters meet specification and routing is made
Industry window is big（Routing carries out under the protection of nitrogen hydrogen mixeding gas, 50-90 watts of routing power, routing pressure 40-140 newton）；
And without apparent aluminium extruded, electrodeless damage when routing.
4, hardness test
The hardness test result of the copper alloy bonding wire of 1-5 of the embodiment of the present invention is shown：The copper alloy bonding wire of the present invention has
Lower wire rod hardness, between 72-92 Hv（The hardness of palladium gold-plated copper wires is plated between 95-110 Hv）, lower line can be played
Material camber.
5, FAB ball-types stability
A.EFO electric currents：60mA
B.N2+H2(gas flow：0.3~0.6 L/min)
The FAB balls of the copper alloy bonding wire of the present invention, stability is identical as plating palladium gold-plated copper wires, is normal ball-type, unbiased
Bulbus cordis and abnormal ball.
6、HAZ（Heat affected area）Length
It is as shown in table 4 below to the HAZ length testing results of the copper alloy bonding wire of 1-5 of the embodiment of the present invention.Test result shows,
The HAZ length of the copper alloy bonding wire of the present invention plates the HAZ length of palladium gold-plated copper wires in 60-70 between 51-59 um
Between um.
Table 4
| Embodiment | HAZ length（um） |
| Embodiment 1 | 51 |
| Embodiment 2 | 59 |
| Embodiment 3 | 54 |
| Embodiment 4 | 52 |
| Embodiment 5 | 55 |
Claims (4)
1. an Albatra metal bonding wire, it is characterised in that contain Pd 0.1-4%, trace additives 1-300 ppm by weight,
Surplus is copper；The trace additives are one kind in Ca, In, Co, Be, Ga, Mg, Ni, Pt and Al or in which two or more
Combination.
2. copper alloy bonding wire according to claim 1, it is characterized in that：The weight percent of Pd in the copper alloy bonding wire
It is 0.5-2% than content.
3. the manufacturing method of copper alloy bonding wire as claimed in claim 1 or 2, it is characterised in that include the following steps：
（1）Founding：Pd and trace additives are added in copper raw material in proportion, continuously draw casting by vacuum melting and orientation
Technique obtains a diameter of 6-8 millimeters of wire rod；
（2）Wire drawing：To step（1）Obtained wire rod carries out wire drawing, obtains the copper alloy wire of a diameter of 50-280um；
（3）Intermediate annealing：Step（2）After the completion of wire drawing, intermediate annealing is carried out to copper alloy wire, N is used in annealing process2Or
Person's nitrogen and hydrogen mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, is moved back
Rate is 60-120m/min at top speed；
（4）To through step（3）The copper alloy wire of intermediate annealing process continues wire drawing, and the copper for obtaining a diameter of 15-40um closes
Gold thread；
（5）Finally anneal：To step（4）Obtained copper alloy wire is finally annealed, and N is used in annealing process2Or nitrogen hydrogen
Gaseous mixture comes as annealing atmosphere, and annealing furnace effective length is 600-1000mm, and annealing temperature is 300-600 DEG C, annealing rate
For 60-120m/min；
（6）It is cooling：After finally annealing, copper alloy wire is cooled to 20-30 DEG C, obtains required copper alloy bonding wire.
4. the manufacturing method of copper alloy bonding wire according to claim 3, it is characterised in that：The step（3）And step
（5）The nitrogen and hydrogen mixture of use by 5% (volume) H2With the N of 95% (volume)2Composition.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110117733A (en) * | 2019-04-30 | 2019-08-13 | 汕头市骏码凯撒有限公司 | A kind of electrum bonding wire and its manufacturing method |
| CN113088837A (en) * | 2021-04-15 | 2021-07-09 | 江西富鸿金属有限公司 | Medical high-elasticity tinned alloy wire and preparation method thereof |
| CN115148419A (en) * | 2022-07-14 | 2022-10-04 | 四川威纳尔特种电子材料有限公司 | High-conductivity antioxidant microalloyed copper alloy bonding wire and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4708739A (en) * | 1985-10-04 | 1987-11-24 | London & Scandinavian Metallurgical Co. Limited | Grain refining metals |
| CN101626006A (en) * | 2009-07-09 | 2010-01-13 | 烟台一诺电子材料有限公司 | Flexible bonding copper wire and preparation method thereof |
| CN102226991A (en) * | 2011-06-12 | 2011-10-26 | 徐云管 | Copper palladium alloy monocrystal bonding wire and manufacturing method thereof |
| CN102666888A (en) * | 2010-01-26 | 2012-09-12 | 三菱综合材料株式会社 | Copper alloy with high strength and high electrical conductivity |
| CN103137235A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Secondary alloyed 1N copper wires for bonding in microelectronics devices |
| CN103228804A (en) * | 2010-12-03 | 2013-07-31 | 三菱综合材料株式会社 | Copper alloy for electronic devices, method for producing copper alloy for electronic devices, and copper alloy rolled material for electronic devices |
| CN104835797A (en) * | 2015-03-23 | 2015-08-12 | 辽宁凯立尔电子科技有限公司 | Copper-palladium-silver alloy bonding wire and method for preparing same |
| CN105177345A (en) * | 2015-08-22 | 2015-12-23 | 汕头市骏码凯撒有限公司 | High-reliability copper alloy bonding wire for microelectronic packaging and manufacturing method thereof |
| CN105470228A (en) * | 2015-12-05 | 2016-04-06 | 烟台一诺半导体材料有限公司 | Insulating coating anti-corrosion alloy bonding wire and preparation method therefor |
| CN106164306A (en) * | 2014-03-31 | 2016-11-23 | 古河电气工业株式会社 | Copper alloy wire and manufacture method thereof |
-
2017
- 2017-12-21 CN CN201711393484.0A patent/CN108598058B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4708739A (en) * | 1985-10-04 | 1987-11-24 | London & Scandinavian Metallurgical Co. Limited | Grain refining metals |
| CN101626006A (en) * | 2009-07-09 | 2010-01-13 | 烟台一诺电子材料有限公司 | Flexible bonding copper wire and preparation method thereof |
| CN102666888A (en) * | 2010-01-26 | 2012-09-12 | 三菱综合材料株式会社 | Copper alloy with high strength and high electrical conductivity |
| CN103228804A (en) * | 2010-12-03 | 2013-07-31 | 三菱综合材料株式会社 | Copper alloy for electronic devices, method for producing copper alloy for electronic devices, and copper alloy rolled material for electronic devices |
| CN102226991A (en) * | 2011-06-12 | 2011-10-26 | 徐云管 | Copper palladium alloy monocrystal bonding wire and manufacturing method thereof |
| CN103137235A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Secondary alloyed 1N copper wires for bonding in microelectronics devices |
| CN106164306A (en) * | 2014-03-31 | 2016-11-23 | 古河电气工业株式会社 | Copper alloy wire and manufacture method thereof |
| CN104835797A (en) * | 2015-03-23 | 2015-08-12 | 辽宁凯立尔电子科技有限公司 | Copper-palladium-silver alloy bonding wire and method for preparing same |
| CN105177345A (en) * | 2015-08-22 | 2015-12-23 | 汕头市骏码凯撒有限公司 | High-reliability copper alloy bonding wire for microelectronic packaging and manufacturing method thereof |
| CN105470228A (en) * | 2015-12-05 | 2016-04-06 | 烟台一诺半导体材料有限公司 | Insulating coating anti-corrosion alloy bonding wire and preparation method therefor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110117733A (en) * | 2019-04-30 | 2019-08-13 | 汕头市骏码凯撒有限公司 | A kind of electrum bonding wire and its manufacturing method |
| CN113088837A (en) * | 2021-04-15 | 2021-07-09 | 江西富鸿金属有限公司 | Medical high-elasticity tinned alloy wire and preparation method thereof |
| CN115148419A (en) * | 2022-07-14 | 2022-10-04 | 四川威纳尔特种电子材料有限公司 | High-conductivity antioxidant microalloyed copper alloy bonding wire and preparation method thereof |
| CN115148419B (en) * | 2022-07-14 | 2023-03-24 | 四川威纳尔特种电子材料有限公司 | High-conductivity antioxidant microalloyed copper alloy bonding wire and preparation method thereof |
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