CN1224767A - Gold alloy wire and its production method and application - Google Patents

Gold alloy wire and its production method and application Download PDF

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Publication number
CN1224767A
CN1224767A CN98122942A CN98122942A CN1224767A CN 1224767 A CN1224767 A CN 1224767A CN 98122942 A CN98122942 A CN 98122942A CN 98122942 A CN98122942 A CN 98122942A CN 1224767 A CN1224767 A CN 1224767A
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China
Prior art keywords
weight
alloy
earth metal
gold
filament
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CN98122942A
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Chinese (zh)
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CN1085739C (en
Inventor
C·西蒙斯
G·赫尔克罗茨
J·罗伊尔
L·施雷普勒
Y·C·仇
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WC Heraus GmbH and Co KG
Heraeus Deutschland GmbH and Co KG
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WC Heraus GmbH and Co KG
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Publication of CN1224767A publication Critical patent/CN1224767A/en
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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Abstract

The invention relates to a gold-alloy flament, the gold-alloy comprising 0.5-0.9%(by weight)of copper and a little platinum or at least one kind of elements selectively from alkaline-earth metals and rare-earth metals, the flament exhibiting similar specific resistance to the gold and having good ratio of strength and stretch. Thereof it is suitable as connecting filament and for manufacturing connecting bump in upside-down wafer.

Description

Gold alloy wire and manufacture method thereof and application
The present invention relates to a kind of manufacture method and application that connects gold alloy wire and this filament of semiconductor element.
Be suitable for connecting the silk of semiconductor element, also claim connecting wire, should have good electrical properties and mechanical strength.The diameter of silk is about the 10-200 micron, is generally the 20-60 micron, can do corresponding the selection according to application purpose.
The composition of connecting wire is generally High Purity Gold or au-alloy, and the latter's advantage is that intensity is higher, and under the less situation of alloy compositions share, its specific conductivity and metallographic are near.
For example, DE 16 08 161 C announce a kind of alloy of a kind of or several rare earth metals by gold and 0.001-0.1%, and particularly and the alloy of cerium-hybrid metal or yttrium, this alloy is used to make the lead of switchgroup.The alloy of this gold and a small amount of rare earth metal or yttrium has strength characteristics and expansion characteristics preferably when Heating temperature reaches 500 ℃, and other character of gold, such as hardness, chemical stability or resistance, unaffected basically.
Gold-rare earth metal-alloy is made connecting wire in DE 32 37 385 A (US 4 885 135), DE39 36 281 A (US 4 938 923), JP 5-179375 A, JP 5-179376 A, JP 6-112258 A also has description among EP 0 743 679 A and EP 0 761 831 A.
DE 32 37 385 A relate to a kind of gold alloy wire with high tensile, and its au-alloy contains 0.0003-0.01% (weight) rare earth metal, particularly cerium, also contains germanium, beryllium and/or calcium simultaneously.
DE 39 36 281 A described a kind of connect semiconductor device than the High Purity Gold silk, this silk is the alloy of gold and a small amount of lanthanum, beryllium, calcium and platinum family element, particularly platinum and/or palladium.
JP 5-179375 A and JP 5-179376 A relate to a kind of gold alloy wire that connects usefulness, this is by gold and 0.0003-0.005% (weight) aluminium or the gallium of higher degree, and 0.0003-0.003% (weight) calcium and 0.0003-0.003% (weight) yttrium, lanthanum, cerium, neodymium, dysprosium and/or beryllium are formed.
Chemical abstracts 121 volumes, 89287m mentions, JP 6-112258 A has announced a kind of connecting wire, it consists of a kind of au-alloy, this alloy contains 1-30% oneself and 0.0001-0.05% scandium, yttrium and/or rare earth metal, also may contain 0.0001-0.05% beryllium, calcium, germanium, nickel, iron, cobalt and/or silver.
EP 0 743 679 A have also recommended a kind of platiniferous gold-rare earth alloys connecting wire, and this alloy is made up of gold and small amounts of platinum (0.0001-0.005% (weight)), silver, magnesium and europium, also may contain 0.0001-0.02% (weight) cerium sometimes.
EP 0 761 831 A have described the gold-rare-earth metal alloy threadlet of a kind of platiniferous and/or palladium, this alloy consist of 0.1-2.2% (weight) platinum and/or palladium, 0.0001-0.005% (weight) beryllium, germanium, calcium, lanthanum, yttrium and/or europium, all the other are gold.This manufacturing processed is, the component of alloy is melted in crucible, and the alloy that melts in the crucible is cooled to ingot casting from bottom to up, again through rolling, draw and annealing.This extensibility is 3-8%, and Young's modulus is 6800-9000kgf/mm 2
EP 0 288 776 A2 relate to the connection by aluminum metallization, and it is doped with copper, and improving hardness and intensity, so it not too is suitable for having the standard gold connecting wire than the doping beryllium of soft.So recommend to connect the contact pad that the aluminium by copper doped forms with a kind of alloy connecting wire, it consists of golden and 0.01-1% (weight) copper, the hardness of this hardness and doped aluminium is complementary.
DE 39 90 432 C2 (=US 5 491 034 A) have announced a kind of cupric connecting wire.This connecting wire is used to connect the electrode and the external lug of semiconductor element, and this silk is made by containing at least the au-alloy of the copper of 1-＜5% (weight).This connecting wire also can add calcium, germanium, beryllium, lanthanum and/or the indium and at least 1% (weight) of 0.0003-0.01% (weight) and the platinum of maximum 5% (weight).The manufacturing of connecting wire be with au-alloy in a vacuum melting stove, melt, wire drawing, then in 200-600 ℃ of following thermal treatment (annealing).Thermal treatment is carried out routinely, and its purpose is to improve owing to draw bad deformability and the unit elongation that produces.Owing to intensity can occur reducing with improving deformability, therefore to select to influence kind and the quantity and the heat-treat condition of the alloy compositions of intensity, make deformability and intensity all satisfy separately requirement.The intensity of connecting wire will increase with the raising of copper component.
JP 01-87734 A (Japanese Patent digest) has announced a kind of filament, and it is by gold and contain at least a following elementary composition of 0.05-0.3% (weight): copper, aluminium, yttrium, nickel, cobalt, titanium, tungsten, silicon, zirconium, calcium, palladium, ruthenium, iridium, platinum, silver and osmium.This filament has good stretchiness and good mechanical property.
JP 08-199261 A (Japanese Patent office-Japanese Patent digest) has described a kind of connecting wire, and it is by High Purity Gold and contain 0.1-2% (weight) copper, 0.01-0.1% (weight) palladium, at least a following metal that also may contain 0.0001-0.01% (weight) tin and/or 0.0001-0.01% (weight) forms: calcium, beryllium, germanium, rare earth metal, strontium, barium, indium and titanium.The intensity of connecting wire enough avoids embedding the contact deficiency in adjacent connection loop in the semiconductor element of plastics.
When selecting connecting wire, except special chemistry and physical properties, desired strength is high as far as possible under given extensibility.
Therefore, the present invention's purpose is to find out a kind of described characteristic gold alloy wire of preface that has, and this filament has intensity/stretch ratio as well as possible, and the difference of its electric conductivity and proof gold filament is as far as possible little.In addition, also to propose a kind of method, make it make filament continuously with advantageous method economically.This filament should not only be suitable for doing connecting wire but also be suitable for making so-called spherical flange (Ball-Bumps) in the flip chip technique, for example described in DE 44 42 960 C.
Above-mentioned purpose reaches by a kind of gold alloy wire, by being characterised in that of the present invention, au-alloy by 0.5-0.9% (weight) copper, 0.5-0.95% (weight) platinum, all the other are formed by gold.
Above-mentioned purpose also can reach by a kind of gold alloy wire, it is characterized in that by the present invention, this au-alloy by 0.5-0.9% (weight) copper, 0.0001-0.1% (weight) at least a be selected from alkaline-earth metal and rare earth metal family element, 0-1% (weight) platinum, all the other are formed by gold.
Implication by the present invention, " alkaline-earth metal " means beryllium, magnesium, calcium, barium and strontium, " rare earth metal " mean after lanthanum (ordination number 57) and the lanthanum 14 elements promptly from cerium (ordination number 58) to lutetium (ordination number 71), in technical literature, also claim " lanthanon ".
The content of alkaline earth metal content and/or rare earth metal should be in 0.001-0.01% (weight), as contain platinum, and then platinum content should be in 0.1-0.9% (weight).
The preferred beryllium of alkaline-earth metal, magnesium, calcium or form by the mixture of two kinds of above-mentioned alkaline-earth metal at least.As by beryllium and calcium composition mixture, then respectively to account for 50% (weight) particularly suitable for beryllium and calcium.
Rare earth metal preferred cerium or be 57 and the mixture formed of the rare earth metal of 59-71 by cerium and a kind of or several ordination number, cerium-hybrid metal is particularly suitable.Cerium-hybrid metal means 50-60% cerium, 25-30% lanthanum, 10-15% neodymium, 4-6% praseodymium and 1% iron and other rare earth metal (" Lv Mupu chemistry encyclopedia " (R  mpp Chemie Lexikon) on a small quantity usually, Georg Thieme VerlagStuttgart-New York, Band 1,10.Auflage (1996), 647).
The of the present invention filament identical with common connecting wire diameter, its character can satisfy the requirement of making connecting wire fully, and its outstanding feature is its electric conductivity height, and electricity is led to use than resistance and is measured (seeing Table VIII), and another characteristics are very high with the relevant intensity that stretches.(seeing figure).Amazing is that the kind and the quantity of the selected alloy compositions copper of the present invention and alkaline-earth metal and/or rare earth metal can also make the loss of strength that is brought by annealing reduce.(seeing Table IX).Filament very proper intensity/stretch ratio helps to obtain high-quality connection.
Accompanying drawing is represented intensity (the tensile strength) [N/mm of several filaments of the present invention (routine 1-6) and non-the present invention's as a comparison filament (example 7) 2] with the relation of stretch (fracture stretches) [%].The present invention's filament has higher intensity under given stretching.The table VIII has provided the filament of the present invention described in the example and with the chemical constitution of the non-filament of the present invention of making comparisons and compare resistance.The table IX is listed in tension stiffening state (ziehharten Zustand) and stretching is about the intensity level of the described filament of 4% routine 1-7, and shows the interpolation beryllium, and calcium and cerium are to the influence of intensity.Beryllium, calcium and cerium have reduced the loss of strength that annealing brings.
The present invention's filament because its character is suitable, is specially adapted to do connecting wire, also can be used for the contact salient point that developing high frequency connects and flip chip is produced.
The realization of above-mentioned purpose also is, the present invention proposes a kind of method of making the gold alloy wire that connects semiconductor element, it is characterized in that, to consist of a) 0.5-0.9% (weight) copper, 0.05-0.95% (weight) platinum, all the other are gold or b) at least a alkaline-earth metal of 0.5-0.9% (weight) copper, 0.0001-0.1% (weight) and rare earth metal family element, 0-1% (weight) platinum, all the other are gold, the alloy of this fusing is cast bar, and bar pulled into the silk that diameter equates with general connecting fiber, and silk is annealed.
If the alloy of fusing is cast pole and silk is descended annealing at 300-700 ℃, method then of the present invention is effective especially.Can make initial tension stiffening silk (ziehharte Draht) obtain the stretching that needs by annealing.The fusing of alloy, casting can be in air, protection gas is for example in the argon or carry out in the vacuum.
The content that method of the present invention preferably melts alkaline-earth metal wherein and/or rare earth metal be 0.001-0.01% (weight) and if have platinum to exist, then the content of platinum is the au-alloy of 0.1-0.9% (weight).
As alkaline-earth metal, can adopt the mixture of beryllium, magnesium, calcium, strontium, barium or at least two kinds of these elements, suitable especially is the mixture of beryllium, magnesium, calcium or at least two kinds of these alkaline-earth metal.If use the mixture of being made up of beryllium and calcium, then preferably beryllium and calcium respectively account for 50% (weight).
As rare earth metal, should adopt cerium or cerium and ordination number be 57 and 59-71 in a kind of or mixture that several rare earth metals are formed, preferred commercially available cerium-hybrid metal in these mixtures.
The characteristics of the present invention's method are that it can carry out continuous production, and handicraft product is a cast bar and a very even and steady quality that pulls into.
With example the present invention is described in detail below, wherein routine 1-6 is for by filament of the present invention and manufacturing thereof, example 7 as a comparative example, it is to be the known filament of prior art according to what DE 16 08 161 C announced.The characteristic of these several filaments will be by its extensibility (fracture stretches) [%], intensity (tensile strength) [N/mm 2] and than resistance [Ohm mm 2/ m] characterize.
Example 1
The gold alloy wire that contains 0.8% (weight) copper and 0.8% (weight) platinum.
To contain 0.8% (weight) copper, 0.8% (weight) platinum, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device.Again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Different stretch rate [%] is measured intensity level [N/mm down 2] list in the table I.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.041 Ohm mm 2/ m.
The table I
Extensibility [%] intensity [N/mm 2]
Tension stiffening 600
2,6?????????????????????????301
2,7?????????????????????????281
3,6?????????????????????????263
5,3?????????????????????????245
6,8?????????????????????????232
8,5?????????????????????????219
9,1?????????????????????????209
9,7?????????????????????????197
11,4?????????????????????????194
Example 2
The gold alloy wire that contains 0.8% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium and 0.8% (weight) platinum.
To contain 0.8% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium, 0.8% (weight) platinum, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device.Again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table II.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.041 Ohm mm 2/ m.
The table II
Extensibility [%] intensity [N/mm 2]
Tension stiffening 585
3,6??????????????????????????375
3,8??????????????????????????354
4,2??????????????????????????337
4,4??????????????????????????318
4,6??????????????????????????308
5,9??????????????????????????293
7,3??????????????????????????281
8,7??????????????????????????267
10,1??????????????????????????255
Example 3
The gold alloy wire that contains 0.8% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium and 0.3% (weight) platinum.
To contain 0.8% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium, 0.3% (weight) platinum, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device, again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table III.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.036 Ohm mm 2/ m.
The table III
Extensibility [%] intensity [N/mm 2]
Tension stiffening 614
3,6??????????????????????????367
3,8??????????????????????????343
4,2??????????????????????????319
5,2??????????????????????????308
6,1??????????????????????????294
7,1??????????????????????????281
8,7??????????????????????????270
10,1??????????????????????????257
10,7??????????????????????????246
Example 4
The gold alloy wire that contains 0.9% (weight) copper, 0.001% (weight) beryllium and 0.001% (weight) calcium.
To contain 0.9% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device, again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table IV.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.034 Ohm mm 2/ m.
The table IV
Extensibility [%] intensity [N/mm 2]
Tension stiffening 673
4,4?????????????????????????????352
4,6?????????????????????????????330
5,3?????????????????????????????316
6,2?????????????????????????????298
7,9?????????????????????????????273
10,8?????????????????????????????255
Example 5
The gold alloy wire that contains 0.9% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium and 0.9% (weight) platinum.
To contain 0.9% (weight) copper, 0.001% (weight) beryllium, 0.001% (weight) calcium, 0.9% (weight) platinum, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device, again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table V.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.043 Ohm mm 2/ m.
The table V
Extensibility [%] intensity [N/mm 2]
Tension stiffening 648
4,0?????????????????????????373
4,2?????????????????????????358
4,6?????????????????????????339
5,2?????????????????????????323
6,2?????????????????????????308
Example 6
The gold alloy wire that contains 0.8% (weight) copper, 0.01% (weight) cerium.
To contain 0.8% (weight) copper, 0.01% (weight) cerium, all the other cast the cast bar of rounded section for the alloy melting body of gold in pouring device, again cast bar is pulled into diameter and be 30 microns silk, each is reached give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table VI.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.034 Ohm mm 2/ m.
The table VI
Extensibility [%] intensity [N/mm 2]
Tension stiffening 585
2,7??????????????????????????????328
3,5??????????????????????????????288
4,9??????????????????????????????268
8,7??????????????????????????????249
Example 7 (Comparative Examples)
Contain cerium-hybrid metal gold alloy wire according to DE 16 08 161 C.
The alloy melting body that will contain gold and cerium-hybrid metal is cast the cast bar of rounded section in pouring device.Again cast bar is pulled into diameter and is 30 microns silk, to whenever-reach and give phase tensile silk and in 300-700 ℃ air, anneal.Intensity level [the N/mm that records under the different stretch rate [%] 2] list in the table VII.
Diameter is that the ratio resistance that 275 microns silk at room temperature records is 0.023 Ohm mm 2/ m.
The table VII
Extensibility [%] intensity [N/mm 2]
Tension stiffening 375
2,9?????????????????????????????263
3,1?????????????????????????????253
3,6?????????????????????????????243
4,0?????????????????????????????230
5,7?????????????????????????????220
8,1?????????????????????????????209
10,1?????????????????????????????198
The table VIII
Example Form % (weight) Compare resistance
?Au ??Be ??Ca??? ??Ce ??Cu ???Pt
????1 All the other ?0,8 ??0,8 ????0,041
????2 All the other 0,001 ?0,001 ?0,8 ??0,8 ????0,041
????3 All the other 0,001 ?0,001 ?0,8 ??0,3 ????0,036
????4 All the other 0,001 ?0,001 ?0,9 ????0,034
????5 All the other 0,001 ?0,001 ?0,9 ??0,9 ????0,043
????6 All the other ?0,01 ?0,8 ????0,034
7 contrasts * ????0,023
8 contrasts 100 ????0,023
9 contrasts All the other ?2,0 ????0,048
10 contrasts All the other ??2,0 ????0,043
11 contrasts All the other ??5,0 ????0,073
12 contrasts All the other ?2,0 ??2,0 ????0,068
*Gold-cerium-mixed metal alloy according to DE 16 08 161 C
The table IX
Example Form % (weight) Intensity
?Au ??Be ??Ca ??Ce ?Cu ?Pt Tension stiffening 4% stretches
????1 All the other ?0,8 ?0,8 ???600 ????260
????2 All the other 0,001 ?0,001 ?0,8 ?0,8 ???585 ????335
????3 All the other 0,001 ?0,001 ?0,8 ?0,3 ???614 ????330
????4 All the other 0,001 ?0,001 ?0,9 ???673 ????365
????5 All the other 0,001 ?0,001 ?0,9 ?0,9 ???648 ????373
????6 All the other ?0,01 ?0,8 ???585 ????280
7 contrasts * ???375 ????230
*Gold-cerium-mixed metal alloy according to DE 16 08 161 C

Claims (16)

1. one kind is used for the gold alloy wire that semiconductor element connects, it is characterized in that, this au-alloy by 0.5-0.9% (weight) copper, 0.05-0.95% (weight) platinum, all the other are formed for golden.
2. one kind is used for the gold alloy wire that semiconductor element connects, it is characterized in that, this au-alloy by the element of at least a alkaline-earth metal of 0.5-0.9% (weight) copper, 0.0001-0.1% (weight) and rare earth metal family, 0-1% (weight) platinum, all the other are formed by gold.
3. the filament of claim 2 is characterized in that, the alkaline-earth metal of this au-alloy and/or the content of rare earth metal are 0.001-0.01% (weight).
4. the filament one of among the claim 1-3 is characterized in that the platinum content of this au-alloy is 0.1-0.9% (weight).
5. the filament one of among the claim 2-4 is characterized in that this alkaline-earth metal is beryllium, magnesium and/or calcium.
6. the filament one of among the claim 2-5 is characterized in that this rare earth metal is a cerium.
7. one kind prepares by the method that is used for the gold alloy wire that semiconductor element connects one of among the claim 1-6, it is characterized in that, to consist of a) 0.5-0.9% (weight) copper, 0.05-0.95% (weight) platinum, all the other are gold or b) 0.5-0.9% (weight) copper, at least a alkaline-earth metal of 0.0001-0.1% (weight) and element, all the other au-alloys fusings of 0-1% (weight) platinum of rare earth metal family for gold, alloy cast bar with this fusing, and bar pulled into the silk that diameter equates with general connecting fiber, and silk is annealed.
8. the method for claim 7 is characterized in that, the alloy of this fusing is cast the bar of rounded section.
9. claim 7 or 8 method is characterized in that, are the au-alloy fusing of 0.001-0.01% (weight) with alkaline-earth metal and/or rare earth metal content.
10. the method one of among the claim 7-9 is characterized in that, platinum content is the au-alloy fusing of 0.1-0.9% (weight).
11. the method one of among the claim 7-10 is characterized in that, will contain the au-alloy fusing of alkaline-earth metal beryllium, magnesium and/or calcium.
12. the method one of among the claim 7-11 is characterized in that, will contain the au-alloy fusing of cerium as rare earth metal.
13. the method one of among the claim 7-12 is characterized in that, with this filament 300-700 ℃ of annealing down.
14. the filament of claim 1-6 is as the application of connecting fiber.
15. claim 14 as the application of connecting fiber in high frequency technique.
16. the filament one of among the claim 1-6 is used as the application of the connection of semiconductor element in flip chip technique.
CN98122942A 1997-11-29 1998-11-27 Gold alloy wire and its production method and application Expired - Fee Related CN1085739C (en)

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JP3367544B2 (en) * 1995-08-23 2003-01-14 田中電子工業株式会社 Gold alloy fine wire for bonding and method of manufacturing the same

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CN110446794A (en) * 2017-03-27 2019-11-12 派特·古普塔 The hard gold alloy containing zirconium, titanium and magnesium for jewelry manufacture
CN107974571A (en) * 2017-11-22 2018-05-01 有研亿金新材料有限公司 A kind of gold porcelain alloy wire and preparation method thereof
CN108922876A (en) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 A kind of billon bonding wire and its manufacturing method
CN108922876B (en) * 2018-06-27 2020-05-29 汕头市骏码凯撒有限公司 Gold alloy bonding wire and manufacturing method thereof
CN111394606A (en) * 2020-05-06 2020-07-10 贵研铂业股份有限公司 Gold-based high-resistance alloy, alloy material and preparation method thereof
CN111394606B (en) * 2020-05-06 2021-03-16 贵研铂业股份有限公司 Gold-based high-resistance alloy, alloy material and preparation method thereof
CN114214538A (en) * 2021-11-12 2022-03-22 中国科学院金属研究所 Gold-platinum alloy inspection mass material for space gravitational wave detection inertial sensor and preparation method thereof

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JP3579603B2 (en) 2004-10-20
CH693209A5 (en) 2003-04-15
KR19990045637A (en) 1999-06-25
MY122351A (en) 2006-04-29
DE19753055B4 (en) 2005-09-15
DE19753055A1 (en) 1999-06-10
KR100326478B1 (en) 2002-07-02
CN1085739C (en) 2002-05-29
JPH11222639A (en) 1999-08-17

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