JP5541440B2 - Alloy wire and manufacturing method thereof - Google Patents
Alloy wire and manufacturing method thereof Download PDFInfo
- Publication number
- JP5541440B2 JP5541440B2 JP2009233478A JP2009233478A JP5541440B2 JP 5541440 B2 JP5541440 B2 JP 5541440B2 JP 2009233478 A JP2009233478 A JP 2009233478A JP 2009233478 A JP2009233478 A JP 2009233478A JP 5541440 B2 JP5541440 B2 JP 5541440B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- silver
- wire
- alloy wire
- palladium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Description
本発明は、金線に関し、特に、半導体パッケージ工程における合金線およびその製造方法に関する。 The present invention relates to a gold wire, and more particularly to an alloy wire in a semiconductor package process and a method for manufacturing the same.
半導体デバイスのパッケージ工程において、金線がチップおよび基板に連接される。金線によりチップと基板とが電気的に接続され、チップと基板との間での信号および電流伝達を行う。 In the semiconductor device packaging process, the gold wire is connected to the chip and the substrate. The chip and the substrate are electrically connected by the gold wire, and signals and current are transmitted between the chip and the substrate.
金線の負荷強度、延伸性、湾曲性、融点、電気性、硬度、ＩＣチップとの接続能力など主要な特性は、用いた材料と関係がある。上記の特性は、半導体デバイスの寿命および安定性に悪影響を及ぼす。チップおよび基板の形態により、用いられる金線の規格も異なる。 Main characteristics such as load strength, stretchability, bendability, melting point, electrical property, hardness, and ability to connect to an IC chip are related to the materials used. The above characteristics adversely affect the lifetime and stability of the semiconductor device. The standard of the gold wire used varies depending on the form of the chip and the substrate.
従来の金線は、主に純金から製造されている。純金から製造された金線は、比較的良好な延伸性および導電性という物理的性質を有する。しかし、純金材料から造られる金線は、コストが高いため、半導体デバイスのコストを増加させた。そのため、純金金線と同等の効果を有し、大幅にコストを下げる金線を提供するのが本発明の課題である。
一方、先行技術として、例えば特許文献１は、金と、銀と、ゲルマニウム，シリコン，アルミニウム，又は銅のいずれか１つと、からなる金合金ボンディングワイヤの組成を開示している。
Conventional gold wires are mainly manufactured from pure gold. Gold wires made from pure gold have the physical properties of relatively good stretchability and conductivity. However, a gold wire made from a pure gold material has a high cost, thus increasing the cost of a semiconductor device. Therefore, it is an object of the present invention to provide a gold wire that has an effect equivalent to that of a pure gold wire and greatly reduces the cost.
On the other hand, as a prior art, for example, Patent Document 1 discloses a composition of a gold alloy bonding wire made of gold, silver, and any one of germanium, silicon, aluminum, or copper.
本発明の目的は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同様の効果を有し、コストを下げる合金線およびその製造方法を提供することにある。 An object of the present invention is to provide an alloy wire that is manufactured from three kinds of metals, gold, silver, and palladium, has the same effect as a pure gold wire, and reduces the cost, and a manufacturing method thereof.
上述の目的を達成するため、本発明は、実質上銀、金、パラジウムからなる合金線およびその製造方法を提供する。本発明の合金線およびその製造方法は、ａ工程において、8.00〜30.00重量%の金および66.00〜90.00重量%の銀の成分を含んだ主要金属材料が提供される。ｂ工程において、主要金属材料が真空溶炉内に入れられ、真空溶炉内に0.01〜6.00重量%のパラジウムを含んだ副次的原料金属材料が混入されると、金銀パラジウム合金溶解液が作り出される。ｃ工程において、金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて金銀パラジウム合金線材が形成される。ｄ工程において、金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工される。 In order to achieve the above object, the present invention provides an alloy wire substantially composed of silver, gold, and palladium and a method for producing the same. Alloy wire and a manufacturing method of the present invention, in a process, the main metallic material is provided that includes a component of 8.00 to 30.00 wt% of gold and from 66.00 to 90.00 wt% silver. In step b, when the main metal material is placed in a vacuum furnace and a secondary raw metal material containing 0.01 to 6.00 wt% palladium is mixed in the vacuum furnace, a gold-silver-palladium alloy solution is produced. It is. In step c, the gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire. In step d, the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.
本発明の合金線は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同等の効果を有し、大幅にコストを削減することができる。 The alloy wire of the present invention is manufactured from three kinds of metals, gold, silver and palladium, and has the same effect as a pure gold wire, and can greatly reduce the cost.
以下、本発明の実施形態を図面に基づいて説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図１および図２を参照する。図１は、本発明の一実施形態による合金線の製造方法を示す流れ図である。図２は、図１の細部を示す流れ図である。図１および図２に示すように、本発明の合金線の製造方法は、まず、工程１００において、金および銀の成分を含んだ主要金属材料が提供される。
Please refer to FIG. 1 and FIG. FIG. 1 is a flowchart showing a method of manufacturing an alloy wire according to an embodiment of the present invention. FIG. 2 is a flowchart showing details of FIG. As shown in FIG. 1 and FIG. 2, in the method of manufacturing an alloy wire of the present invention, first, in
工程１０２において、溶解精錬が行われる。金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ（工程１０２ａ）、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入され、溶解される（工程１０２ｂ）。これにより、真空溶炉が金銀パラジウム合金溶解液を作り出す（工程１０２ｃ）。金銀パラジウム合金溶解液は、金が8.00〜30.00重量%、銀が66.00〜90.00重量%、パラジウムが0.01〜6.00重量%含まれる。
In
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が４〜８ mmの金銀パラジウム合金線材が形成される（工程１０２ｄ）。リールにより金銀パラジウム合金線材が巻き取られる（工程１０２ｅ）。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる（工程１０２ｆ）。
A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm (
工程１０４において、鋳造された金銀パラジウム合金線材が引き伸ばされる。線径が４〜８ mmの金銀パラジウム合金線材が第１の太線伸線機により３mm以下に引き伸ばされる（工程１０４ａ）。引き続き、第２の太線伸線機により１mm以下に引き伸ばされる（工程１０４ｂ）。第１の細線伸線機により0.18 mm以下に引き伸ばされる（工程１０４ｃ）。0.18 mm以下の金銀パラジウム合金線材が第２の細線伸線機（工程１０４ｄ）、極細線伸線機（工程１０４ｅ）および超極細線伸線機（工程１０４ｆ）に順番に引き伸ばされて0.050 mm (2.00mil)〜0.010 mm (0.40mil)の金銀パラジウム合金線となる。
In
工程１０６において、金銀パラジウム合金線の表面が洗浄される。
In
工程１０８において、金銀パラジウム合金線に対して、乾燥およびアニール処理が行われることにより、金銀パラジウム合金線の破断強度(Breaking Load)、伸度(Elongation) など物理的特性が所定範囲内に限定されるようにする。
In
本発金銀パラジウム合金線は、ＩＣ、ＬＥＤおよびＳＡＷのパッケージにおいて、導線として用いられる This gold-silver-palladium alloy wire is used as a conductor in IC, LED and SAW packages.
以下、本発明の三つの実施形態を詳細に説明する。 Hereinafter, three embodiments of the present invention will be described in detail.
第１の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が30.00重量%、銀が66.00重量%、パラジウムが4.00重量%含まれる。
First Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 30.00% by weight of gold, 66.00% by weight of silver, and 4.00% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が４mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が４ mmの金銀パラジウム合金線材が第１の太線伸線機により３mm以下に引き伸ばされる。引き続き、第２の太線伸線機により１mmに引き伸ばされる。第１の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第２の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 4 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is drawn in turn by a second fine wire drawing machine, a super fine wire drawing machine, and a super fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
第２の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が8.00重量%、銀が86.00重量%、パラジウムが6.00重量%含まれる。
Second Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 8.00% by weight of gold, 86.00% by weight of silver, and 6.00% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が６mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 6 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が６ mmの金銀パラジウム合金線材が第１の太線伸線機により３mm以下に引き伸ばされる。引き続き、第２の太線伸線機により１mmに引き伸ばされる。第１の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第２の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 6 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is drawn in turn by a second fine wire drawing machine, a super fine wire drawing machine, and a super fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
第３の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が9.99重量%、銀が90.00重量%、パラジウムが0.01重量%含まれる。
Third Embodiment A main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 9.99% by weight of gold, 90.00% by weight of silver, and 0.01% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が８mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 8 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が８ mmの金銀パラジウム合金線材が第１の太線伸線機により２mm以下に引き伸ばされる。引き続き、第２の太線伸線機により１mmに引き伸ばされる。第１の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第２の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 8 mm is drawn to 2 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is drawn in turn by a second fine wire drawing machine, a super fine wire drawing machine, and a super fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
金、銀およびパラジウムの三種の金属を用いて調合した合金線は、純金金線の効果を有し、大幅にコストを削減することができる。 An alloy wire prepared by using three kinds of metals, gold, silver and palladium, has the effect of a pure gold wire, and can greatly reduce the cost.
本発明では好適な実施形態を前述の通りに開示したが、これらは決して本発明を限定するものではなく、当該技術を熟知する者は誰でも、本発明の精神と領域を脱しない範囲内で各種の変更や修正を加えることができる。従って、本発明の保護の範囲は、特許請求の範囲で指定した内容を基準とする。 Although preferred embodiments of the present invention have been disclosed as described above, they are not intended to limit the present invention in any way, and anyone skilled in the art is within the spirit and scope of the present invention. Various changes and modifications can be made. Therefore, the scope of protection of the present invention is based on the contents specified in the claims.
工程１００ 主要金属材料が提供される
工程１０２ 溶解精錬が行われる
工程１０４ 引き伸しが行われる
工程１０６ 表面が洗浄される
工程１０８ アニール処理が行われる
工程１０２ａ 真空溶炉内に入れられる
工程１０２ｂ 攪拌および溶解が行われる
工程１０２ｃ 金銀パラジウム合金溶解液が作り出される
工程１０２ｄ 金銀パラジウム合金線材が形成される
工程１０２ｅ 金銀パラジウム合金線材が巻き取られる
工程１０２ｆ 成分分析が行われる
工程１０４ａ 第１の太線伸線機により引き伸ばしが行われる
工程１０４ｂ 第２の太線伸線機により引き伸ばしが行われる
工程１０４ｃ 第１の細線伸線機により引き伸ばしが行われる
工程１０４ｄ 第２の細線伸線機により引き伸ばしが行われる
工程１０４ｅ 極細線伸線機により引き伸ばしが行われる
工程１０４ｆ 超極細線伸線機により引き伸ばしが行われる
Step 100 Main metal material provided
Claims (5)
８．００〜３０．００重量％の金および６６．００〜９０．００重量％の銀の成分を含んだ主要金属材料が提供されるａ工程と、
前記主要金属材料が真空溶炉内に入れられ、真空溶炉内に０．０１〜６．００重量％のパラジウムである添加金属材料が混入されると、金銀パラジウム合金溶解液が作り出されるｂ工程と、
前記金銀パラジウム合金溶解液が連続して鋳造され、鋳塊が形成されることなく直接引き伸ばされて金銀パラジウム合金線材が形成されるｃ工程と、
前記金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工されるｄ工程と、を含むことを特徴とする合金線の製造方法。 A manufacturing method for manufacturing an alloy wire made of silver, gold, and palladium, which is used as a conductive wire in an IC, LED, and SAW package ,
Providing a primary metallic material comprising a component of 8.00 to 30.00% by weight of gold and 66.00 to 90.00% by weight of silver;
The primary metal material is placed in a vacuum flash furnace, the added metal material is 0.01 to 6.00 wt% palladium into the vacuum flash furnace is incorporated, b step gold-silver-palladium alloy solution is created When,
C step in which the gold-silver-palladium alloy solution is continuously cast and stretched directly without forming an ingot to form a gold-silver-palladium alloy wire;
A d-process in which the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.
第１の細線伸線機により０．１８ｍｍ以下に引き伸ばされ、０．１８ｍｍ以下の前記金銀パラジウム合金線材が第２の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて０．０５０〜０．０１０ｍｍの前記金銀パラジウム合金線となることを特徴とする請求項２に記載の合金線の製造方法。 In the step d, the gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm is drawn to 3 mm or less by the first thick wire drawing machine, and drawn to 1 mm or less by the second thick wire drawing machine,
It is drawn to 0.18 mm or less by the first fine wire drawing machine, and the gold-silver-palladium alloy wire rod of 0.18 mm or less is sequentially applied to the second fine wire drawing machine, the extra fine wire drawing machine and the super extra fine wire drawing machine. 3. The method of manufacturing an alloy wire according to claim 2, wherein the alloy wire is drawn to become the gold-silver-palladium alloy wire having a thickness of 0.050 to 0.010 mm.
８．００〜３０．００重量％の金と、
６６．００〜９０．００重量％の銀と、
０．０１〜６．００重量％のパラジウムと、を含み、
上記合金溶解液から連続鋳造され、鋳塊が形成されることなく直接引き伸ばされて製造されることを特徴とする合金線。 An alloy wire composed of silver, gold, and palladium, whose composition component is used as a conductor in IC, LED, and SAW packages ,
8.00 to 30.00 wt% gold;
66.00 to 90.00% by weight silver,
0.01 to 6.00% by weight of palladium,
An alloy wire characterized by being continuously cast from the above alloy solution and drawn and drawn directly without forming an ingot .
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098102770 | 2009-01-23 | ||
| TW98102770A TW201028227A (en) | 2009-01-23 | 2009-01-23 | Method for manufacturing composite metal wire and product thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010171378A JP2010171378A (en) | 2010-08-05 |
| JP5541440B2 true JP5541440B2 (en) | 2014-07-09 |
Family
ID=42703175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009233478A Active JP5541440B2 (en) | 2009-01-23 | 2009-10-07 | Alloy wire and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5541440B2 (en) |
| TW (1) | TW201028227A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7445801B2 (en) | 2019-12-26 | 2024-03-07 | 文化シヤッター株式会社 | Storage structure for switchgear |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4771562B1 (en) | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag-Au-Pd ternary alloy bonding wire |
| TW201216300A (en) * | 2011-07-11 | 2012-04-16 | Profound Material Technology Co Ltd | Composite silver thread |
| US8940403B2 (en) * | 2012-01-02 | 2015-01-27 | Wire Technology Co., Ltd. | Alloy wire and methods for manufacturing the same |
| JP5165810B1 (en) * | 2012-09-12 | 2013-03-21 | 田中電子工業株式会社 | Silver gold palladium alloy bump wire |
| JP5399581B1 (en) * | 2013-05-14 | 2014-01-29 | 田中電子工業株式会社 | High speed signal bonding wire |
| KR20160030777A (en) * | 2014-09-11 | 2016-03-21 | 엠케이전자 주식회사 | Silver alloy bonding wire and manufacturing method thereof |
| JP6753051B2 (en) * | 2014-10-31 | 2020-09-09 | 日亜化学工業株式会社 | Light emitting device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10130882A (en) * | 1996-10-24 | 1998-05-19 | Tokyo Tungsten Co Ltd | Composite metallic wire for electronic wire and its production |
| JP3612180B2 (en) * | 1997-08-20 | 2005-01-19 | 新日本製鐵株式会社 | Gold-silver alloy fine wire for semiconductor devices |
| JPH11126788A (en) * | 1997-10-23 | 1999-05-11 | Tanaka Electron Ind Co Ltd | Ic-chip connecting gold alloy wire |
| JPH11288962A (en) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | Bonding wire |
| JP3329286B2 (en) * | 1998-11-09 | 2002-09-30 | 三菱マテリアル株式会社 | Gold alloy wires for bonding semiconductor devices |
| JP5010495B2 (en) * | 2007-02-06 | 2012-08-29 | 新日鉄マテリアルズ株式会社 | Gold wire for semiconductor element connection |
-
2009
- 2009-01-23 TW TW98102770A patent/TW201028227A/en unknown
- 2009-10-07 JP JP2009233478A patent/JP5541440B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7445801B2 (en) | 2019-12-26 | 2024-03-07 | 文化シヤッター株式会社 | Storage structure for switchgear |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010171378A (en) | 2010-08-05 |
| TWI373382B (en) | 2012-10-01 |
| TW201028227A (en) | 2010-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5541440B2 (en) | Alloy wire and manufacturing method thereof | |
| US8101123B2 (en) | Composite alloy bonding wire and manufacturing method thereof | |
| JP2010167490A (en) | Method for producing alloy wire and product of the alloy wire | |
| CN109003903B (en) | Gold bonding wire and preparation method thereof | |
| KR101536554B1 (en) | Bonding wire | |
| US20090297391A1 (en) | Manufacturing method for a silver alloy bonding wire and products thereof | |
| JP5671512B2 (en) | Bonding wire | |
| JP2010245390A (en) | Bonding wire | |
| TWI536396B (en) | Silver alloy soldered wire for semiconductor packages | |
| WO2014137288A1 (en) | Palladium coated copper wire for bonding applications | |
| CN101786154A (en) | Composite gold wire and manufacture method thereof | |
| KR20170001555A (en) | A silver alloy material and method for manufacturing the silver alloy material | |
| TW201709363A (en) | Copper alloy bonding wire may not stretch a cutoff end portion from a cross-sectional area of a bonding wire by unifying the crystalline grain size without direction | |
| TWI802555B (en) | bonding wire | |
| US20090191088A1 (en) | Manufacturing method for a composite metal bonding wire and products thereof | |
| JP2010040944A (en) | Copper insulation bonding wire, and manufacturing method thereof | |
| CN101569968B (en) | Silver alloy bonding wire for packing wires and manufacturing method thereof | |
| US20100239455A1 (en) | Composite alloy bonding wire and manufacturing method thereof | |
| CN101786155A (en) | Composite gold wire and manufacture method thereof | |
| KR101912983B1 (en) | Ag-Au ALLOY BONDING WIRE | |
| JP5775015B2 (en) | Ag bonding wire and manufacturing method thereof | |
| WO2022163606A1 (en) | Aluminum bonding wire for power semiconductor | |
| TW200944307A (en) | Method of making silver alloy solder wire for package wire and product thereof | |
| US20090191424A1 (en) | Manufacturing method for a composite metal wire used as a packaging wire and products thereof | |
| JP2016122700A (en) | Copper bonding wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120104 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120117 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120416 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120529 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120925 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120925 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20121113 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130201 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130524 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130607 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131126 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131212 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131218 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140422 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5541440 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |