KR20160030777A - Silver alloy bonding wire and manufacturing method thereof - Google Patents

Silver alloy bonding wire and manufacturing method thereof Download PDF

Info

Publication number
KR20160030777A
KR20160030777A KR1020140120384A KR20140120384A KR20160030777A KR 20160030777 A KR20160030777 A KR 20160030777A KR 1020140120384 A KR1020140120384 A KR 1020140120384A KR 20140120384 A KR20140120384 A KR 20140120384A KR 20160030777 A KR20160030777 A KR 20160030777A
Authority
KR
South Korea
Prior art keywords
wire
bonding wire
ratio
silver
heat treatment
Prior art date
Application number
KR1020140120384A
Other languages
Korean (ko)
Inventor
이종철
김상엽
정도현
홍성재
김승현
허영일
문정탁
Original Assignee
엠케이전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엠케이전자 주식회사 filed Critical 엠케이전자 주식회사
Priority to KR1020140120384A priority Critical patent/KR20160030777A/en
Publication of KR20160030777A publication Critical patent/KR20160030777A/en

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/4952Additional leads the additional leads being a bump or a wire
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Abstract

The silver alloy bonding wire according to the technical idea of the present invention is a silver alloy bonding wire comprising silver (Ag) as a main component and containing palladium (Pd) and gold (Au), wherein the ratio of crystal grains having an aspect ratio of 3 or more The method of manufacturing a silver alloy bonding wire according to the technical idea of the present invention is characterized in that an alloy piece containing silver (Ag) as a main component and containing palladium (Pd) and gold (Au) Wherein the step of drawing and heat-treating the alloy piece includes a step of performing a heat treatment before the reduction ratio of the cross section of the fine wire obtained by drawing the alloy piece reaches 90% or more , And the heat treatment is characterized in that the elongation of the wire is performed at 5 to 20%.

Description

Silver alloy bonding wire and manufacturing method < RTI ID = 0.0 >

The present invention relates to a silver alloy bonding wire and a method of manufacturing the same, and more particularly, to a silver alloy bonding wire having improved ball shape uniformity and shape and excellent in reliability and loop straightness.

BACKGROUND ART [0002] There are various structures in a package for mounting a semiconductor device, and bonding wires are still widely used for connecting a substrate to a semiconductor device or for connecting between semiconductor devices. Although gold bonding wires are widely used as bonding wires, there is a demand for bonding wires that can replace them because they are expensive and recent prices have increased rapidly. As a substitute for gold (Au), copper wire has been frequently exposed to pad cracks due to high hardness of copper due to chip bonding during ball bonding, and SOB (stitch-on -bump bonding has not been solved due to the high hardness and strong oxidizability of the copper. As an alternative to this, research on a bonding wire mainly composed of silver (Ag) at an inexpensive price has been actively conducted. Efforts are being made to develop a bonding wire of superior quality by alloying silver and other metal elements, but there is still room for improvement.

A problem to be solved by the technical idea of the present invention is to provide a silver alloy bonding wire which is improved in ball shape uniformity and shape formed at the tip of a wire, and is excellent in reliability and loop straightness.

Another problem to be solved by the technical idea of the present invention is to provide a method of manufacturing a silver alloy bonding wire which is improved in uniformity of a ball shape and a shape formed at a wire tip and is excellent in reliability and loop straightness.

The silver alloy bonding wire according to one aspect of the technical idea of the present invention is a silver alloy bonding wire comprising silver (Ag) as a main component and containing palladium (Pd) and gold (Au) And the ratio of the crystal grains is 10 to 40%.

The silver alloy bonding wire according to one aspect of the technical idea of the present invention is a silver alloy bonding wire comprising silver (Ag) as a main component and containing palladium (Pd) and gold (Au) and a misorientation of 15 degrees or less.

In exemplary embodiments, the content of palladium (Pd) and gold (Au) is 2 to 10 wt%.

In the illustrative embodiments, at least one of beryllium (Be), calcium (Ca), lanthanum (La), iridium (Ir), rhodium (Rh), iron (Fe), aluminum (Al) ), And the content of the component is 3 to 60 ppm by weight.

A method of manufacturing a silver alloy bonding wire according to an aspect of the present invention includes the steps of producing an alloy piece containing silver (Ag) as a main component and containing palladium (Pd) and gold (Au) Wherein the step of drawing and heat-treating the alloy piece includes a step of performing a heat treatment before the cross-sectional reduction ratio of the fine wire obtained by drawing the alloy piece is not less than 90% The heat treatment is characterized in that the elongation of the wire is performed at 5 to 20%.

In the exemplary embodiments, the drawing and heat treatment are characterized in that the ratio of the grains having an aspect ratio of 3 or more is 10 to 40% at the central portion of the silver alloy bonding wire.

In the exemplary embodiments, the drawing and heat treatment is characterized in that the center portion of the silver alloy bonding wire is configured to be a crystal having a misorientation of 15 degrees or less.

In exemplary embodiments, the heat treatment is performed four to six times.

In exemplary embodiments, the alloy piece is characterized in that the content of palladium (Pd) and gold (Au) is 2 to 10 wt%.

In the exemplary embodiments, the alloy piece may be made of at least one of beryllium (Be), calcium (Ca), lanthanum (La), iridium (Ir), rhodium (Rh), iron (Fe), aluminum (Al) And platinum (Pt), and the content of the component is 3 to 60 ppm by weight.

When the silver alloy bonding wire of the present invention is used, the ball shape uniformity and shape formed at the wire tip are improved, and the reliability and the loop straightness are excellent.

FIG. 1 and FIG. 2 show results of a mis-orientation image analysis according to an embodiment of the present invention.
FIGS. 3 and 4 are cross-sectional views illustrating a fresh structure of a silver alloy bonding wire according to an embodiment of the present invention.
5 is a block diagram illustrating a method of manufacturing a silver alloy bonding wire according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the inventive concept may be modified into various other forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the inventive concept are desirably interpreted to provide a more complete understanding of the inventive concept to those skilled in the art. The same reference numerals denote the same elements at all times. Further, various elements and regions in the drawings are schematically drawn. Accordingly, the inventive concept is not limited by the relative size or spacing depicted in the accompanying drawings. In the embodiments of the present invention, wt% (% by weight) is a percentage of the weight of the total alloy in weight of the total alloy.

The terms first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and conversely, the second component may be referred to as a first component.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the expressions "comprising" or "having ", etc. are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, It is to be understood that the invention does not preclude the presence or addition of one or more other features, integers, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs, including technical terms and scientific terms. In addition, commonly used, predefined terms are to be interpreted as having a meaning consistent with what they mean in the context of the relevant art, and unless otherwise expressly defined, have an overly formal meaning It will be understood that it will not be interpreted.

The concept of the present invention discloses a silver alloy bonding wire comprising silver (Ag) as a main component, palladium (Pd) and gold (Au), and further containing trace components. Here, the main component means that the concentration of the element in the total component exceeds 50%. That is, when silver (Ag) is the main component, it means that the concentration of silver to the total of silver and other elements exceeds 50%.

FIG. 1 and FIG. 2 show results of a mis-orientation image analysis according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, in a silver alloy bonding wire according to the present invention, a fresh structure can be defined using an aspect ratio of crystal grains. The aspect ratio can be expressed by the ratio of the largest length to the smallest length in the grain size. From the EBSD results, it was confirmed that the aspect ratio of the grain measured at the center of the wire was mostly 3 or more, and that the misorientation of the grain was 15 deg. Or less. This is in contradiction to that of a high hardness grain having an aspect ratio of 1 and a grain orientation misorientation of more than 15 degrees in general heat treated grain. That is, in the present invention, a fresh structure can be defined as a structure in which crystal grains having an orientation of 15 degrees or less and an aspect ratio of 3 or more exist in the center of the wire.

FIGS. 3 and 4 are cross-sectional views illustrating a fresh structure of a silver alloy bonding wire according to an embodiment of the present invention.

3 and 4, a fresh tissue is formed at a central portion of the bonding wire. FIG. 6 is a photograph of a section of a silver alloy bonding wire of the present invention taken by a scanning electron microscope (SEM). FIG.

It is a feature of the present invention that fresh tissue is present at 10 to 40% of the wire center in the longitudinal section of the wire. The central part of the wire means the inside of the surface in the cross section of the wire, and the part between the upper part and the lower part in the longitudinal direction can be called the center part. The definition of the ratio to fresh tissue can be expressed as a ratio of the length of the wire (a) to the length of the fresh tissue (b) in the straight line, when an arbitrary straight line is drawn perpendicular to the wire in the wire longitudinal section. That is,

Figure pat00001
to be.

As shown in the following Tables 1 and 2, in the present invention, the ball shape and loop characteristics are most effective when the fresh tissue ratio is 20 to 30% at the center of the wire, and when the fresh tissue ratio exceeds 40% The strength may increase, and disconnection may occur during the drawing process.

The present invention improves ball shape and loop straightness compared to conventional processes by controlling the microstructure of the silver alloy bonding wire through the heat treatment process and the alloy process, that is, by forming the fresh structure at a ratio of 10 to 40% .

Since either the heat treatment process or the alloy process may not be able to obtain a desired fresh tissue ratio, a detailed examination of the microstructure control through the heat treatment process and the alloy process will be given below.

[Microstructure Control through Heat Treatment Process]

Silver alloy bonding wire is produced by first collecting silver (Ag), gold (Au), and palladium (Pd) in a desired composition and melting it in a melting furnace. Wherein the continuously cast silver alloy is made of a wire having a diameter in the range of 7 to 10 mm.

The cross-sectional area of the wire can then be reduced while passing several dies for thinning, and the reduction rate for reducing the cross-sectional area can be adjusted to about 7 to 15%. This thinning process can be largely divided into several stages, and a heat treatment process may be included between each step. This is because the work hardening energy generated during processing may be saturated in the material, resulting in a sudden break of the material. Therefore, it is desirable to perform the heat treatment before the work hardening energy is saturated in the material.

The point at which energy saturation occurs by the drawing process can be represented by the reduction rate of the cross section of the wire. The section reduction rate can be expressed as a measure of how much the section reduction due to machining occurs over the initial section.

Figure pat00002

In the drawing process, when the cross-sectional reduction rate reaches 95% through each dice, the process saturation may occur and sudden breakage may occur. Therefore, it is necessary to carry out the heat treatment to remove the saturated work hardening energy. In the conventional process, when the reduction rate of the cross section was 95%, the heat treatment proceeded. The heat treatment may be carried out from 5% to 50% based on the elongation of the wire, for example, at a temperature of 500 to 600 ° C in a nitrogen atmosphere for 3 to 5 seconds, followed by one to two heat treatment steps . Here, the heat treatment is performed to the grain growth step in order to remove the work hardening energy in the material as much as possible. Finally, as the final heat treatment step proceeds, the grain inside the wire can be uniformly controlled.

In the conventional silver bonding wire manufacturing method, the heat treatment process is performed once or twice because the processing is saturated and the wire breakage occurs when the reduction rate of the section is 95% at the drawing stage. However, in the process according to the embodiment of the present invention, when the reduction rate of the cross section is less than 90% in the drawing stage, the first heat treatment process proceeds and the heat treatment process requires four times or more, preferably four to six times. Here, the heat treatment process is performed under a condition of 5 to 20% based on the elongation of the wire, and is performed at a temperature of 300 to 450 DEG C in a nitrogen atmosphere for 0.01 to 2 seconds, and is performed in the recovery and nucleation step do. That is, the temperature and time of the heat treatment process are lower than those of the conventional process, and the number of heat treatment processes is increased compared to the conventional process, thereby making the structure uneven. The low heat treatment temperature does not remove the saturated energy in the wire center, but only the machining energy of the wire surface is removed. Then the center of the wire will develop fresh tissue. However, if the heat treatment temperature is too low, it may lead to frequent wire breakage. If the number of heat treatment processes is too high, the manufacturing cost is increased due to the increase of the process. Therefore, appropriate heat treatment temperature and frequency are required. However, the microstructure control through the alloying process will be discussed since the heat treatment process alone can not obtain a desired fresh tissue ratio.

[Microstructure Control through Alloying Process]

Generally, silver alloy wires can be added with gold (Au) to improve the bonding workability and ensure the true configuration of the free air ball (FAB), and reliability, oxidation resistance, Palladium (Pd) can be added to ensure straightness.

Silver alloy bonding wire is not spherical due to oxidation when producing FAB with EFO (Electro Flame Off) spark. Therefore, gold (Au) and palladium (Pd) may be added to prevent such oxidation. Here, gold (Au) improves the true configuration of the FAB, suppresses the bias of the ball, and improves the oxidation resistance of the wire. If the content of gold (Au) is less than 0.1 wt%, it may not be effective, and therefore, 0.1 wt% or more may be included. And the content ratio of palladium (Pd) / gold (Au) may be 2.5 or more. If the content ratio is less than 2.5, corrosion of the intermetallic compound may be accelerated under high-humidity reliability conditions, resulting in a short circuit of electrical signals. Palladium (Pd) can improve corrosion resistance of the wire and corrosion of intermetallic compounds, thereby improving high-humidity reliability. If the amount of palladium (Pd) is less than 2.5% by weight, corrosion of intermetallic compounds may not be suppressed. Therefore, the amount of palladium (Pd) may be 2.5% by weight or more.

It is also possible to control the crystal grain by adding about 3 to 50 ppm of Be, Ca, La, Ir, Rh, Fe, Al, Cu, Pt or the like so that fresh tissue can be developed at the center of the wire. This is because the dopant distributed in the grain boundary at the heat treatment has a fixing effect for suppressing the growth of grain and an effect that the processing energy is not easily removed.

[Ball shape and loop characteristics test]

Hereinafter, the constitution and effects of the present invention will be described in more detail with reference to specific experimental examples and comparative examples. However, these experimental examples are only intended to clarify the present invention and are not intended to limit the scope of the present invention. In the Experimental Examples and Comparative Examples, physical properties were evaluated by the following methods.

1. Sample Preparation

5 is a block diagram illustrating a method of manufacturing a silver alloy bonding wire according to an embodiment of the present invention.

Referring to FIG. 5, a metal raw material containing silver (Ag), gold (Au), and palladium (Pd) may be melted and cast in a melting furnace to have a desired composition. At this time, trace components other than silver (Ag), gold (Au), and palladium (Pd) may be added (S1).

Then, a total amount of the metal raw material is cooled and solidified, and an alloy bar can be obtained by forging, rolling or the like (S2).

Then, the alloy bar may be thinned to have an appropriate diameter (S3).

Then, the thinned thin wire is drawn and heat treated (S4). In the drawing and heat-treating step, progressive thinning of the fine wire and heat treatment may be included. The experimental example of the present invention can perform the heat treatment process (process B) 5 times for 0.5 seconds at a temperature of 350 캜 in a nitrogen atmosphere. In the case of the comparative example, two heat treatment steps (step A) can be performed in a nitrogen atmosphere at a temperature of 550 DEG C for 4 seconds.

Finally, additional annealing may be performed after the drawing is completed to adjust the elongation (S5). The annealing conditions for controlling the elongation can be varied depending on the composition of the fine wire, the reduction ratio, the heat treatment conditions, and the like. The annealing process can be performed, for example, by passing the bonding wire through a furnace at a proper speed. Further, the rate at which the bonding wire is passed through the furnace can be determined from the annealing time and the size of the furnace.

2. Test method

(1) Ball shape measurement

The front end of the bonding wire with a diameter of 20 μm was used as a pre-air ball with a diameter of 42 μm by using a mixed gas of nitrogen gas (95%) and hydrogen gas (5%) to capture an image, FAB surface) and the degree of closeness (true composition) were evaluated.

Classification of the ball is classified into Class A, Class A if the shape of the ball is made spherical and slightly spherical, Class B if the ball is shifted to the outer periphery, Class C if the ball is shifted to the outer periphery, The ball was observed.

(2) Loop linearity measurement

Bumps were formed on one of the two rows of bonding pads arranged at intervals of 120 mu m to form bumps. Then, ball bonding was performed on the opposite side of the bumps, and stitch bonding was performed on the bumps while forming a loop. Then, the interval is measured for the narrowest interval between the loops, and this is determined as a value representative of the interval between the loops.

To determine the linearity of the bonded loop, we classified it as follows. If the distance between the loops is in the range of 111 to 125 μm, it is classified into Class A, 110 to 105 μm if Class B, 104 μm or less, or 126 μm or more, and total 208 loops are observed.

(3) Measurement of number of disconnection

In case of disconnection, it is rated less than 0.2 times according to the number of disconnection per product production km, ◎, less than 0.2 times and less than 0.3 times good, 0.3 times or more than 0.4 times average △, and 0.4 times or more poor X rating.

3. Test results

The results of ball shape and loop characteristics are shown in the table below. In the classification of ball shape and loop straightness classified in the present invention, the final grade is divided according to the number of A class.

In the case of the ball shape, 464 to 460 are very good, 459 to 450 are good, 449 to 440 are usually rated poor, and 439 or less is poor.

In the case of the loop straightness, 208 to 205 are very good, 204 to 200 are good, 199 to 195 are average, and 194 or less are poor.

In case of disconnection, it is rated less than 0.2 times according to the number of disconnection per product production km, ◎, less than 0.2 times and less than 0.3 times good, 0.3 times or more than 0.4 times average △, and 0.4 times or more poor X rating.

(1) Comparative analysis with conventional processes

Figure pat00003

The conventional process and the process of the present invention are carried out under different heat treatment conditions as described above.

Comparative Examples 1 and 2 are bonding wires containing only the main component and manufactured according to the conventional heat treatment process (process A). In the case of the bonding wire according to the conventional heat treatment process, since the fresh tissue is not developed, the ball shape and the loop straightness are both bad. That is, when the heat treatment is proceeded by the conventional process, the fresh texture ratio is low due to the process characteristic that the fresh texture can not be developed, so that the shape of the ball and the loop straightness are not good.

Comparative Examples 3 and 4 are bonding wires produced according to the heat treatment process (process B) of the present invention, in which the content of the main component is the same as that of Comparative Examples 1 and 2. Comparative Example 3 had the same results as Comparative Example 1, whereas Comparative Example 4 showed a fresh texture of about 2%. However, it can be seen that the result of ball shape and loop straightness is not changed with this degree of fresh structure.

In Comparative Example 5 and Experimental Example 1, a material to which a minor component (Be: 3 ppm, Ca: 3 ppm, La: 3 ppm) was added to the composition of Comparative Example 3 which developed about 2% In Experimental Example 1, the ratio of fresh tissue was about 11%, which indicates that the ball shape and loop straightness are normal. In the case of Comparative Example 5 made of the same material, the ratio of the fresh structure is about 3% by using the conventional heat treatment process (process A), and the shape characteristic and the loop straightness are bad.

In Comparative Example 6 and Experimental Example 2, a material in which trace components (Be: 3 ppm, Ca: 10 ppm, La: 10 ppm) was added to the composition of Comparative Example 3 developed to about 2% In Experimental Example 2, the ratio of fresh tissue was about 28%, which indicates that the ball shape is very good, the loop linearity is good, and the number of disconnection is very good. In the case of Comparative Example 6 made of the same material, by using the conventional heat treatment process (process A), the ratio of the fresh structure is about 8%, and the shape characteristic and loop straightness are bad.

As shown in Table 1, all of the characteristics of the ball shape, the loop straightness, and the number of disconnection are improved as the ratio of the fresh tissue increases in the case of the bonding wire manufactured by the process of the present invention as compared with the conventional process.

(2) Analysis according to composition

Figure pat00004

In Experimental Examples 3 to 14, it is the same that silver (Ag) is the main component and gold (Au) and palladium (Pd) are the main components. However, by adding 3 to 50 ppm of trace elements such as Be, Ca, La, Ir, Rh, Fe, Al, Cu, and Pt, the fresh texture ratio was increased.

In Experimental Examples 3, 6, and 7, fresh tissue ratio is about 10%. The lower the freshness ratio is, the more the ball shape and loop straightness characteristics are. In the case of Experimental Example 3, the fresh tissue ratio was 19%, and in Experimental Example 7, the fresh tissue ratio was 11%. The ball characteristics of Experimental Example 3 are very good and the loop straightness is good, but in the case of Experimental Example 7, the ball shape and the loop straightness are normal.

In Experiment 8, the fresh tissue ratio is about 20%. The results of this experiment show that the characteristics of Experimental Example 8 are the best. Ball characteristics, loop straightness, and number of disconnection are evaluated to be very good. Therefore, it is considered that the best bonding wire characteristics are shown when the ratio of fresh tissue is 20%.

In Experimental Examples 4, 5, 12, 13 and 14, fresh tissue ratio is about 30%. As the fresh tissue ratio increases, it can be seen that the characteristic of the number of disconnection is normal. In the case of Experimental Example 5, the fresh tissue ratio was 32% and in Experimental Example 14, the fresh tissue ratio was 36%. The ball characteristics and loop straightness of Experimental Example 5 are very good and the number of disconnection is good, but in Experimental Example 14, the ball characteristics and loop straightness are excellent, but the number of disconnection is normal.

In Experimental Examples 9 to 11, the fresh tissue ratio is about 40%. If the fresh tissue ratio exceeds 40%, the ball characteristics and loop straightness are very good, but the number of times of disconnection is poor.

In Experimental Example 14 and Comparative Example 7, the case where the sum of the minor constituents is 60 ppm and the case where the sum of the minor constituents is 80 ppm can be compared. In the case of containing 80 ppm of the minor constituents, that is, Is more than 40%, the ball shape and the loop linearity do not change any more, and only the number of times of disconnection becomes poor. Therefore, it is judged that it is not necessary to include the trace component in excess of 60 ppm.

4. Improvement effect by fresh tissue ratio

Unlike the conventional silver alloy bonding wire having uniform crystal grains, the present invention is characterized in that it contains 10 to 40% of fresh tissue at the center of the wire. Here, it is confirmed by experiments that the crystal grains of the fresh tissue have an anisotropic property, which suppresses the unevenness of the bonded ball and improves the straightness of the loop. When the fresh tissue ratio was less than 10%, the effect of ball shape and loop straightness was not improved. When the fresh tissue ratio was more than 40%, the effect of ball shape and loop straightness was improved. However, It is difficult to function as a

5. Conclusion

The bonding wire produced by the conventional process and the bonding wire manufactured by the process of the present invention were different in the ratio of the fresh tissue and the bonding wire produced by the process of the present invention having a high fresh tissue ratio in ball shape and loop straightness And showed better characteristics.

In the case of the bonding wire manufactured by the process of the present invention, the ball shape and the loop straightness tend to be improved when the fresh tissue ratio is 10 to 40%. When the fresh tissue ratio is 20 to 30% It was expected that the performance as the bonding wire could be improved because the characteristics of the number of disconnection as well as the linearity were also good.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The present invention may be modified in various ways. Therefore, modifications of the embodiments of the present invention will not depart from the scope of the present invention.

The present invention can be usefully used in the semiconductor industry.

Claims (10)

  1. A silver alloy bonding wire comprising silver (Ag) as a main component and containing palladium (Pd) and gold (Au)
    And a ratio of crystal grains having an aspect ratio of 3 or more in the central portion is 10 to 40%.
  2. A silver alloy bonding wire comprising silver (Ag) as a main component and containing palladium (Pd) and gold (Au)
    And the crystal grains in the center portion have a misorientation of 15 degrees or less.
  3. 3. The method according to claim 1 or 2,
    A silver alloy bonding wire characterized in that the content of palladium (Pd) and gold (Au) is 2 to 10 wt%.
  4. 3. The method according to claim 1 or 2,
    Selected from the group consisting of beryllium (Be), calcium (Ca), lanthanum (La), iridium (Ir), rhodium (Rh), iron (Fe), aluminum (Al), copper (Cu) ≪ / RTI > further comprising at least one < RTI ID =
    Wherein the content of the component is 3 to 60 wt ppm.
  5. (Pd) and gold (Au) with silver (Ag) as a main component, and
    And drawing and annealing the alloy piece,
    The step of drawing and heat-treating the alloy piece comprises:
    And performing heat treatment before the cross-sectional reduction ratio of the fine wire obtained by drawing the alloy piece becomes 90% or more,
    Wherein the heat treatment is performed at an elongation of 5 to 20% of the wire.
  6. 6. The method of claim 5,
    Wherein the silver wire bonding wire is configured such that the ratio of the grains having an aspect ratio of 3 or more is 10 to 40% at the central portion of the silver alloy bonding wire.
  7. 6. The method of claim 5,
    Wherein the center of the silver alloy bonding wire is a crystal grains having a misorientation of 15 degrees or less in the drawing and heat treatment.
  8. 6. The method of claim 5,
    Wherein the heat treatment is performed four to six times.
  9. 6. The method of claim 5,
    Wherein the alloy piece has a content of palladium (Pd) and gold (Au) of 2 to 10% by weight.
  10. 6. The method of claim 5,
    The alloy piece is composed of beryllium (Be), calcium (Ca), lanthanum (La), iridium (Ir), rhodium (Rh), iron (Fe), aluminum (Al), copper (Cu) Further comprising at least one component selected from the group consisting of
    Wherein the content of the component is 3 to 60 weight ppm.
KR1020140120384A 2014-09-11 2014-09-11 Silver alloy bonding wire and manufacturing method thereof KR20160030777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140120384A KR20160030777A (en) 2014-09-11 2014-09-11 Silver alloy bonding wire and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020140120384A KR20160030777A (en) 2014-09-11 2014-09-11 Silver alloy bonding wire and manufacturing method thereof
TW104128883A TW201610190A (en) 2014-09-11 2015-09-02 Silver alloy-bonding wire and manufacturing method thereof
CN201510578852.3A CN105429469A (en) 2014-09-11 2015-09-11 Silver alloy bonding wire and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR20160030777A true KR20160030777A (en) 2016-03-21

Family

ID=55507462

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140120384A KR20160030777A (en) 2014-09-11 2014-09-11 Silver alloy bonding wire and manufacturing method thereof

Country Status (3)

Country Link
KR (1) KR20160030777A (en)
CN (1) CN105429469A (en)
TW (1) TW201610190A (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040710A (en) * 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd Gold alloy fine wire for bonding
CN101630669A (en) * 2008-07-14 2010-01-20 Mk电子株式会社 Semiconductor encapsulation of Ag or Ag alloy lead wire
CN101630670A (en) * 2008-07-14 2010-01-20 Mk电子株式会社 Ag-based alloy lead wire for semiconductor encapsulation
TWI373382B (en) * 2009-01-23 2012-10-01 Lee Jun Der
JP4771562B1 (en) * 2011-02-10 2011-09-14 田中電子工業株式会社 Ag-Au-Pd ternary alloy bonding wire

Also Published As

Publication number Publication date
CN105429469A (en) 2016-03-23
TW201610190A (en) 2016-03-16

Similar Documents

Publication Publication Date Title
JP5506959B2 (en) Bonding wire for semiconductor
KR101873952B1 (en) Silver alloy wire for bonding applications
JP5550369B2 (en) Copper bonding wire for semiconductor and its bonding structure
KR101419147B1 (en) Copper alloy sheet and process for producing same
US9644250B2 (en) Copper alloy sheet for electric and electronic part
JP4118832B2 (en) Copper alloy and manufacturing method thereof
US9427830B2 (en) Copper alloy bonding wire for semiconductor
US7820913B2 (en) Bonding wire for semiconductor device
EP2653575B1 (en) Copper alloy wire and copper alloy spring
JP4886899B2 (en) Bonding wire for semiconductor
US8742258B2 (en) Bonding wire for semiconductor
KR101383401B1 (en) Bonding wire for semiconductor devices
JP5399581B1 (en) High speed signal bonding wire
JP6664368B2 (en) Bonding wire for semiconductor device
US8389860B2 (en) Bonding wire for semiconductor devices
TWI237334B (en) A gold bonding wire for a semiconductor device and a method for producing the same
DE112015004682B4 (en) Bond wire for semiconductor device
CN103155130B (en) Ag-Au-Pd ternary alloy three-partalloy closing line
KR101114656B1 (en) Copper alloy sheet for qfn package superior in dicing processability and qfn package
JP5165810B1 (en) Silver gold palladium alloy bump wire
JP4637256B1 (en) Bonding wire for semiconductor
JP4904252B2 (en) Bonding wires for semiconductor devices
JP5539055B2 (en) Copper alloy material for electric / electronic parts and method for producing the same
JP4554724B2 (en) Bonding wires for semiconductor devices
CN102890976B (en) Soft dilute copper alloy line, soft dilute copper alloy plate and soft dilute copper alloy are twisted thread

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
X701 Decision to grant (after re-examination)