TWI802555B - bonding wire - Google Patents

bonding wire Download PDF

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TWI802555B
TWI802555B TW106144543A TW106144543A TWI802555B TW I802555 B TWI802555 B TW I802555B TW 106144543 A TW106144543 A TW 106144543A TW 106144543 A TW106144543 A TW 106144543A TW I802555 B TWI802555 B TW I802555B
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mass
content
bonding wire
fab
mass ppm
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TW106144543A
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TW201842201A (en
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滝川圭美
藤川良太
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日商拓自達電線股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
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    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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  • Metallurgy (AREA)
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  • Powder Metallurgy (AREA)
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Abstract

本發明之目的在於提供一種以Ag作為主成分之接合線，其可使FAB之真球性或耐熱衝擊性良好並且可將接線時形成之迴路之高度設計為較小，能夠實現半導體封裝之薄型化。 本發明之接合線其Pd之含量為0.1質量%以上且10質量%以下、Cu之含量為0.05質量%以上且2質量%以下、選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量為20質量ppm以上且500質量ppm以下、選自由Ge、Bi、及Mg所組成之群中之1種或2種以上元素之合計含量為0質量ppm以上且500質量ppm以下，且剩餘部分包含Ag。The purpose of the present invention is to provide a bonding wire with Ag as the main component, which can make the true sphericalness of FAB or thermal shock resistance good, and can design the height of the loop formed during wiring to be small, and can realize thin semiconductor packaging change. The bonding wire of the present invention has a Pd content of 0.1% by mass to 10% by mass, a Cu content of 0.05% by mass to 2% by mass, selected from Ca, Y, Sm, La, Ce, Nd, Eu, The total content of one or two or more elements in the group consisting of Gd and Sc is 20 mass ppm or more and 500 mass ppm or less, and one or two elements selected from the group consisting of Ge, Bi, and Mg The total content of the above elements is not less than 0 mass ppm and not more than 500 mass ppm, and the remainder contains Ag.

Description

接合線bonding wire

本發明係關於一種以Ag(銀)作為主成分之接合線。The present invention relates to a bonding wire mainly composed of Ag (silver).

半導體元件上之電極與基板之電極之接線所使用之接合線由於通常非常細，故而由導電性良好且加工性優異之金屬材料製造。尤其是就化學穩定性或大氣中之易操作性之方面而言，自先前以來廣泛使用以Au(金)作為主成分之接合線。然而，先前之以Au作為主成分之接合線其質量之99%以上為Au，價格非常高。因此，業界提出有一種以價格低於Au之Ag作為主成分之接合線(例如下述專利文獻1)。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2016-25114號公報The bonding wire used for connecting the electrodes on the semiconductor element and the electrodes on the substrate is usually very thin, so it is made of a metal material with good conductivity and excellent processability. In particular, in terms of chemical stability and ease of handling in the atmosphere, bonding wires containing Au (gold) as a main component have been widely used until now. However, more than 99% of the mass of the conventional bonding wire mainly composed of Au is Au, and the price is very high. Therefore, the industry proposes a bonding wire mainly composed of Ag, which is less expensive than Au (for example, Patent Document 1 below). [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2016-25114

[發明所欲解決之問題] 關於上述專利文獻1之接合線，為了使藉由放電加熱等形成於接合線之前端之無空氣焊球(以下亦有時記作「FAB」)之真球性或耐熱性良好，而於主成分之Ag中添加有Pd(鈀)、Au、Ca(鈣)、Ge(鍺)、Bi(鉍)、Mg(鎂)、Cu(銅)等元素。 近年來，於半導體元件中，對更嚴酷之熱環境中之使用或半導體封裝之薄型化之要求較高。伴隨於此，對以Ag作為主成分之接合線要求對周圍溫度變化之耐性(耐熱衝擊性)、或縮小將電極間接線時所形成之迴路之高度。然而，上述專利文獻1之接合線存在無法充分滿足該等要求之情況。 本發明係鑒於上述情況而完成者，其目的在於：於以Ag作為主成分之接合線中，使FAB之真球性或耐熱衝擊性良好並且將接線時形成之迴路之高度設計為較小，能夠實現半導體封裝之薄型化。 [解決問題之技術手段] 為了解決上述課題，本發明之接合線為如下者：Pd之含量為0.1質量%以上且10質量%以下、Cu之含量為0.05質量%以上且2質量%以下、選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量為20質量ppm以上且500質量ppm以下、選自由Ge、Bi、及Mg所組成之群中之1種或2種以上元素之合計含量為0質量ppm以上且500質量ppm以下，且剩餘部分包含Ag。 本發明之接合線中，Pd之含量CPd 相對於Cu之含量CCu 之比率(CPd /CCu )可設為2以上。 本發明之接合線中，Cu之含量CCu 與Pd之含量CPd 之合計可設為10.05質量%以下。 本發明之接合線之選自由Ge、Bi、及Mg所組成之群中之1種或2種以上元素之合計含量可設為0質量ppm。 又，本發明之接合線之選自由Ge、Bi、及Mg所組成之群中之1種或2種以上元素之合計含量可設為20質量ppm以上且500質量ppm以下。 [發明之效果] 本發明之以Ag作為主成分之接合線可使FAB之真球性或耐熱衝擊性良好並且可將接線時形成之迴路之高度設計為較小，能夠實現半導體封裝之薄型化。[Problems to be Solved by the Invention] With regard to the bonding wire of the above-mentioned Patent Document 1, in order to make the true sphericalness of the air-free solder ball (hereinafter sometimes referred to as "FAB") formed on the leading end of the bonding wire by discharge heating etc. Or heat resistance is good, and elements such as Pd (palladium), Au, Ca (calcium), Ge (germanium), Bi (bismuth), Mg (magnesium), and Cu (copper) are added to the main component of Ag. In recent years, in semiconductor elements, there has been a higher demand for use in a harsher thermal environment or for thinner semiconductor packages. Along with this, resistance to changes in ambient temperature (thermal shock resistance) and a reduction in the height of a circuit formed when connecting electrodes are required for a bonding wire mainly composed of Ag. However, the bonding wire of Patent Document 1 mentioned above may not fully satisfy these requirements. The present invention has been made in view of the above circumstances, and its object is to improve the spherical properties and thermal shock resistance of FAB and to design the height of the loop formed at the time of wiring to be small in a bonding wire mainly composed of Ag. Thinning of semiconductor packages can be realized. [Technical means to solve the problem] In order to solve the above-mentioned problems, the bonding wire of the present invention is as follows: the content of Pd is 0.1% by mass to 10% by mass, the content of Cu is 0.05% by mass to 2% by mass, or The total content of one or more elements in the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, Gd, and Sc is 20 mass ppm or more and 500 mass ppm or less, selected from Ge, The total content of one or more elements in the group consisting of Bi and Mg is 0 mass ppm or more and 500 mass ppm or less, and the remainder contains Ag. In the bonding wire of the present invention, the ratio of the Pd content C Pd to the Cu content C Cu (C Pd /C Cu ) can be set to 2 or more. In the bonding wire of the present invention, the total of the Cu content C Cu and the Pd content C Pd can be set to 10.05% by mass or less. In the bonding wire of the present invention, the total content of one or more elements selected from the group consisting of Ge, Bi, and Mg may be 0 mass ppm. In addition, the bonding wire of the present invention may have a total content of one or more elements selected from the group consisting of Ge, Bi, and Mg of 20 mass ppm or more and 500 mass ppm or less. [Effects of the Invention] The bonding wire of the present invention whose main component is Ag can improve the true sphericalness and thermal shock resistance of the FAB, and can design the height of the loop formed during wiring to be small, enabling thinning of the semiconductor package. .

以下，對本發明之一實施形態之接合線進行說明。 本實施形態之接合線含有0.1質量%以上且10質量%以下之Pd、0.05質量%以上且2質量%以下之Cu、20質量ppm以上且500質量ppm以下之選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上之元素，且剩餘部分包含Ag。 接合線之線徑宜根據用途而設為各種大小。例如接合線之線徑可設為5 μm以上且150 μm以下。 具體而言，構成接合線之Ag亦可含有精製上不可避免地存在之雜質、例如Pd、Bi(鉍)、Cu(銅)、Fe(鐵)等，較佳為使用純度99.9質量%以上之Ag而製作構成接合線之Ag合金。 藉由含有Pd及Cu，可提高線於常溫下之拉伸強度(以下亦有時將該拉伸強度稱為「常溫拉伸強度」)。藉由提高常溫拉伸強度，變得難以發生因線接合後之樹脂密封時所不斷流入之樹脂導致線迴路之變形(即所謂線偏移)。 又，藉由含有Pd及Cu，可使藉由將熔融之FAB壓接至如圖1所示之電極10而形成於電極上之接合部(以下亦有時將該接合部稱為「第1接合部」)12與線W之邊界部分(以下亦有時將該邊界部分稱為「第1頸部」)14處之強度提高。於接合線因周圍溫度之變化而斷線之情形時，大多係於第1頸部14處斷裂，但藉由含有Pd及Cu，可使第1頸部14處之強度提高，因此，可使耐熱衝擊性良好。 Pd及Cu元素均可使常溫拉伸強度及第1頸部14之強度提高。因此，於不含Pd及Cu之任一元素之情形、或一元素之含量低於特定量之情形時，亦可藉由添加另一元素而提高常溫拉伸強度及第1頸部14之強度。 然而，於Pd及Cu元素均不含之情形、或者一元素之含量低於特定量之情形時，與含有特定量以上之一元素之情形相比，因添加Ag以外之元素而容易使FAB之真球性變差。換言之，藉由含有Pd至少0.1質量%以上、Cu至少0.05質量%以上，即便增加Ag以外之添加元素之含量，亦難以使FAB之真球性變差，容易獲得真球度較高之FAB。 另一方面，若Pd之含量超過10質量%，則固有電阻值變大，於IC用途之情形時出現如半導體封裝過熱之不良情況，或於LED用途之情形時接合線之光線反射率降低。又，若Cu之含量超過2質量%，則FAB之真球性變差。 因此，Pd之含量可設為0.1質量%以上且10質量%以下。Cu之含量可設為0.05質量%以上且2質量%以下。藉由於此種範圍內設定Pd及Cu之含量，可良好地保持FAB之形成性並且使常溫拉伸強度及第1頸部14之強度提高，實現線偏移之抑制及耐熱衝擊性之提高。尤其是就可穩定地獲得真球度較高之FAB之方面而言，較佳為以Pd之含量CPd 相對於Cu之含量CCu 之比率(CPd /CCu )成為2以上之方式含有Pd及Cu。又，可抑制接合線之光線反射率之降低，故而較佳為Pd之含量CPd 與Cu之含量CCu 之合計(CPd ＋CCu )為10.05質量%以下 Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc可使線之耐熱性提高。接合線因FAB形成時之熱而於離FAB最近之線部分產生被稱作HAZ(Heat Affected Zone，熱影響區)之大晶粒區域R(參照圖2)。包含高純度之Ag之接合線由於耐熱性較低而容易受到熱之影響，故而HAZ增長。因此，包含高純度之Ag之接合線於將電極間接線時形成之迴路高度H變大(參照圖1)。若迴路高度H變大，則無法使半導體封裝薄型化並且迴路形狀容易發生異常。 然而，藉由含有選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上之元素(以下亦有時稱為「第1添加元素群」)，耐熱性提高並且FAB形成時產生之HAZ之長度縮短，故而可使接線時之迴路高度H減小。 以Ag作為主成分之接合線中，於Pd之含量為0.1質量%以上且10質量%以下並且Cu之含量為0.05質量%以上且2質量%以下之情形時，第1添加元素群之合計含量可設為20質量ppm以上且500質量ppm以下。 若第1添加元素群之合計含量為20質量ppm以上，則耐熱性提高並且FAB形成時產生之HAZ之長度縮短，故而可使接線時之迴路高度H減小。若第1添加元素群之合計含量為500質量ppm以下，則容易獲得真球度較高之FAB。 再者，於本發明中，除上述Pd、Cu、及第1添加元素群以外，亦可進而追加添加選自由Ge、Bi、及Mg所組成之群中之1種或2種以上之元素(以下亦有時稱為「第2添加元素群」)。即，第2添加元素群為任意成分。若該第2添加元素群之合計含量為500質量ppm以下，則不會損害添加Pd、Cu、及第1添加元素群所獲得之上述作用效果。又，若第2添加元素群之合計含量為20質量ppm以上，則線之耐熱性提高並且FAB形成時變得難以產生HAZ，可使接線時之迴路高度減小。因此，於添加第2添加元素群之情形時，第2添加元素群之合計含量較佳為20質量ppm以上且500質量ppm以下。 其次，對此種構成之接合線之製造方法之一例進行說明。 首先，製作如下Ag合金：於純度99.9質量%以上之Ag中以Pd之含量成為0.1質量%以上且10質量%以下、Cu之含量成為0.05質量%以上且2質量%以下、第1添加元素群之合計含量成為20質量ppm以上且500質量ppm以下之方式添加有Pd、Cu及第1添加元素群。再者，於製造含有第2添加元素群之接合線之情形時，除Pd、Cu及第1添加元素群以外，以第2添加元素群之合計含量成為20質量ppm以上且500質量ppm以下之方式亦添加第2添加元素群而製作Ag合金。所獲得之Ag合金利用連續鑄造法鑄造成特定直徑之棒狀錠。 繼而，對棒狀錠進行伸線加工而縮小直徑直至成為特定之直徑，製成接合線。再者，亦可視需要於伸線加工之中途進行軟化熱處理。 並且，進行伸線加工直至成為特定之直徑後，視需要在熱處理爐中移動而進行調質熱處理，獲得接合線。 本實施形態之接合線由於Pd之含量為0.1質量%以上且10質量%以下、Cu之含量為0.05質量%以上且2質量%以下、選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量為20質量ppm以上且500質量ppm以下，且剩餘部分包含Ag，故而可使FAB之真球性或耐熱衝擊性良好並且可將接線時形成之迴路之高度設計為較小，能夠實現半導體封裝之薄型化。 於本實施形態之接合線中，藉由以Pd之含量CPd 相對於Cu之含量CCu 之比率(CPd /CCu )成為2以上之方式設定Pd及Cu之含量，可穩定地獲得真球度較高之FAB。 又，於本實施形態之接合線中，若Pd之含量CPd 與Cu之含量CCu 之合計(CPd ＋CCu )為10.05質量%以下，則可抑制接合線之光線反射率之降低。因此，若將該接合線用於LED等發光元件之接合，則可獲得高發光效率之發光元件。 又，於本實施形態之接合線中，亦可含有選自由Ge、Bi、及Mg所組成之群中之1種或2種以上之元素，該等元素之合計含量較佳為20質量ppm以上且500質量ppm以下。除Pd、Cu、及第1添加元素群以外，亦可進而追加含有選自由Ge、Bi、及Mg所組成之群中之1種或2種以上之元素，藉此，可將接線時形成之迴路之高度設計為較小，能夠實現半導體封裝之薄型化。 以上，對本發明之實施形態進行了說明，但該等實施形態係作為例而提示者，並不意圖限定發明之範圍。該等實施形態亦可以其他各種形態進行實施，於不脫離發明之主旨之範圍內可進行各種省略、置換、變更。該等實施形態或其變形與包含於發明之範圍或主旨同樣地，包含於申請專利範圍中記載之發明及其均等之範圍內。 [實施例] 以下，藉由實施例更具體地說明本發明，但本發明並不限定於該等實施例。 使用純度99.9質量%以上之Ag原料，使如下述表1所示之組成之Ag合金熔解，利用連續鑄造法製作棒狀錠。對所製作之棒狀錠實施伸線加工，縮小直徑直至直徑成為25 μm，其後，實施調質熱處理，獲得實施例1～10及比較例1～7之接合線。再者，實施例1～10及比較例1～7之接合線之線徑(直徑)均為25 μm。 [表1]

Figure 106144543-A0304-0001
針對所獲得之實施例1～10及比較例1～7之接合線，對(1)常溫拉伸強度、(2)第1頸部之強度、(3)FAB真球性、(4)因FAB形成時之熱而於離FAB最近之線部分所產生的HAZ之長度、(5)熱循環試驗、及(6)光線反射率進行評價。具體評價方法如下所述。 (1)常溫拉伸強度 於15～25℃之室溫(常溫)中將長度100 mm之線進行拉伸直至其斷裂，測定斷裂時之負荷。 (2)第1頸部之強度 如圖1所示般將電極間利用接合線接合後，藉由剝離試驗機，自第1頸部14沿拉離第1接合12之方向拉伸線W直至線W斷裂，測定線W自第1頸部14斷裂時之負荷。 (3)FAB真球性 對於實施例1～10及比較例1～7之接合線，利用焊線機(K＆S公司製造，IConn)於氮氣環境下製作2.0倍線徑之大小之FAB。作為FAB形成性之評價，對實施例1～10及比較例1～7之接合線逐一製作500個FAB後，利用通用型電子顯微鏡(日本電子股份有限公司製造，JSM-6510LA)進行外觀觀察，分別測定所製作之FAB之線平行方向與垂直方向之長度。將FAB之線平行方向之長度X與垂直方向之長度Y的比(X/Y)設為真球性之指標，若為95%～100%，則判斷為「有真球性」，計數判斷為有真球性之FAB之個數。結果表示對所製作之500個FAB判斷為有真球性之FAB之個數的比率。 (4)HAZ長度 上述(3)中，利用上述通用型電子顯微鏡對製作FAB之線進行外觀觀察，對於離FAB最近之線部分所產生之HAZ長度進行測定，算出其平均值。 (5)熱循環試驗 將電極間利用接合線接合後，利用矽酮樹脂進行密封而獲得半導體試樣，使用市售之熱循環試驗裝置對該半導體試樣進行評價。溫度歷程係於-40℃下保持60分鐘後，進行升溫直至125℃，於該溫度下保持60分鐘。將其設為1次循環，進行1000次循環之試驗。試驗後進行電性測定，實施導通評價。評價之線數為500根，於不良率為1%以下之情形時設為「A」，於超過1%之情形時耐性較低，故而設為「D」。 (6)光線反射率 於同種之LED間接合實施例1～10、比較例1～7及純銀之接合線，進行樹脂密封，藉由各實施例、比較例及純銀之接合線進行接合，而製作LED元件。將所製作之元件利用JIS C8152中規定之方法進行總光束測定。測定結果係將利用純銀之線進行接合而得之LED之光量設為100%時之各實施例、比較例之光量換算為百分率表示。 [表2]
Figure 106144543-A0304-0002
 結果如表2所示，實施例1～10中獲得如下結果：常溫拉伸強度為10.0 gf以上，第1頸部之強度為10.5 gf以上，HAZ長度為150 μm以下，FAB真球性為100%，熱循環試驗為「A」，光線反射率成為90%以上，評價項目均為良好。 比較例1中，由於Pd之含量未達0.1質量%，故而常溫拉伸強度及第1頸部之強度較低，熱循環試驗之評價為「D」。 比較例2中，由於選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量未達20質量ppm，故而耐熱性較低，熱循環試驗之評價為「D」。 比較例3中，由於Cu之含量未達0.05質量%，故而第1頸部之強度較低，熱循環試驗之評價為「D」。 比較例4中，由於Cu之含量未達0.05質量%，但Pd之含量多於比較例3，故而常溫拉伸強度及第1頸部之強度較高，獲得良好之結果。然而，比較例4中，FAB真球性變差。又，比較例4中，隨著FAB真球性變差，導致第1接合與電極之接著性變差，因此熱循環試驗之評價為「D」。即，比較例4中，由於Cu之含量未達0.05質量%，故而無法同時實現常溫拉伸強度及第1頸部之強度與FAB真球性。 比較例5中，由於Cu之含量超過2質量%，故而FAB真球性變差，熱循環試驗之評價為「D」。 比較例6中，由於Pd之含量超過10質量%，故而光線反射率降低。又，比較例6中，由於選自由Ge、Bi、及Mg所組成之群中之1種或2種以上元素之合計含量超過500質量ppm，故而FAB真球性變差，熱循環試驗之評價為「D」。 比較例7中，由於Pd之含量超過10質量%，故而光線反射率降低。又，比較例7中，由於選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量超過500質量ppm，故而FAB真球性變差。Hereinafter, a bonding wire according to an embodiment of the present invention will be described. The bonding wire of this embodiment contains Pd at 0.1 mass % to 10 mass %, Cu at 0.05 mass % to 2 mass %, and Ca, Y, Sm, La at 20 mass ppm to 500 mass ppm. , Ce, Nd, Eu, Gd, and one or more elements of the group consisting of Sc, and the remainder contains Ag. The wire diameter of the bonding wire should be set to various sizes according to the application. For example, the wire diameter of the bonding wire can be set to not less than 5 μm and not more than 150 μm. Specifically, the Ag constituting the bonding wire may also contain impurities that inevitably exist in purification, such as Pd, Bi (bismuth), Cu (copper), Fe (iron), etc. Ag to make the Ag alloy constituting the bonding wire. By containing Pd and Cu, the tensile strength of the wire at room temperature can be increased (hereinafter this tensile strength may also be referred to as "room temperature tensile strength"). By improving the tensile strength at room temperature, it becomes difficult to cause deformation of the wire loop (so-called wire offset) due to continuous inflow of resin during resin sealing after wire bonding. In addition, by containing Pd and Cu, the joint portion formed on the electrode by crimping the molten FAB to the electrode 10 shown in FIG. The strength of the boundary portion 14 between the joint portion ”) 12 and the wire W (hereinafter, the boundary portion may also be referred to as “the first neck portion”) 14 is improved. When the bonding wire breaks due to a change in ambient temperature, it is often broken at the first neck 14, but by containing Pd and Cu, the strength of the first neck 14 can be improved, so that it can be used Good thermal shock resistance. Both Pd and Cu elements can increase the tensile strength at room temperature and the strength of the first neck portion 14 . Therefore, in the case where neither Pd nor Cu is contained, or when the content of one element is lower than a specific amount, the tensile strength at room temperature and the strength of the first neck portion 14 can also be improved by adding another element. . However, when neither Pd nor Cu elements are contained, or when the content of one element is lower than a specific amount, compared with the case where one element is contained in a specific amount or more, the addition of elements other than Ag tends to make the FAB True sphericity deteriorates. In other words, by containing at least 0.1% by mass of Pd and at least 0.05% by mass of Cu, even if the content of additional elements other than Ag is increased, it is difficult to deteriorate the sphericity of FAB, and it is easy to obtain FAB with higher sphericity. On the other hand, if the content of Pd exceeds 10% by mass, the intrinsic resistance value will increase, causing problems such as overheating of the semiconductor package in the case of IC applications, or the light reflectance of bonding wires in the case of LED applications will decrease. Moreover, when the content of Cu exceeds 2% by mass, the sphericity of FAB will deteriorate. Therefore, the content of Pd may be 0.1 mass % or more and 10 mass % or less. The content of Cu can be set to not less than 0.05% by mass and not more than 2% by mass. By setting the content of Pd and Cu within such a range, the formability of the FAB can be maintained well, the tensile strength at room temperature and the strength of the first neck portion 14 can be improved, and line deviation can be suppressed and thermal shock resistance can be improved. In particular, it is preferable to contain it so that the ratio of the Pd content CPd to the Cu content C Cu (C Pd /C Cu ) becomes 2 or more in terms of stably obtaining FAB with a high sphericity. Pd and Cu. In addition, since the reduction of the light reflectance of the bonding wire can be suppressed, it is preferable that the total of the Pd content C Pd and the Cu content C Cu (C Pd + C Cu ) be 10.05% by mass or less Ca, Y, Sm, La, Ce , Nd, Eu, Gd, and Sc can improve the heat resistance of the wire. In the bonding wire, a large grain region R called HAZ (Heat Affected Zone) is generated at the wire portion closest to the FAB due to heat during FAB formation (see FIG. 2 ). A bonding wire containing high-purity Ag is easily affected by heat due to its low heat resistance, and thus the HAZ increases. Therefore, the loop height H formed when the bonding wire containing high-purity Ag is formed when connecting electrodes is increased (see FIG. 1 ). If the loop height H is increased, the thickness of the semiconductor package cannot be reduced, and abnormalities in the loop shape are likely to occur. However, by containing one or more elements selected from the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, Gd, and Sc (hereinafter sometimes referred to as "the first addition Element group"), the heat resistance is improved and the length of the HAZ generated when FAB is formed is shortened, so the loop height H during wiring can be reduced. In a bonding wire mainly composed of Ag, when the content of Pd is 0.1% by mass to 10% by mass and the content of Cu is 0.05% by mass to 2% by mass, the total content of the first additive element group It can be 20 mass ppm or more and 500 mass ppm or less. When the total content of the first additive element group is 20 mass ppm or more, the heat resistance is improved and the length of the HAZ generated during FAB formation is shortened, so that the loop height H during wiring can be reduced. When the total content of the first added element group is 500 mass ppm or less, it is easy to obtain FAB with high sphericity. Furthermore, in the present invention, in addition to the above-mentioned Pd, Cu, and the first added element group, one or more elements selected from the group consisting of Ge, Bi, and Mg may be further added ( Hereinafter, it may also be referred to as "the second additive element group"). That is, the second additive element group is an arbitrary component. If the total content of the second additional element group is 500 mass ppm or less, the above-mentioned effect obtained by adding Pd, Cu, and the first additional element group will not be impaired. Also, when the total content of the second additive element group is 20 mass ppm or more, the heat resistance of the wire is improved, HAZ becomes less likely to occur during FAB formation, and the loop height during wiring can be reduced. Therefore, when adding the second additive element group, the total content of the second additive element group is preferably 20 mass ppm or more and 500 mass ppm or less. Next, an example of a method of manufacturing a bonding wire having such a configuration will be described. First, the following Ag alloy is produced: in Ag with a purity of 99.9% by mass or more, the content of Pd is 0.1% by mass to 10% by mass, the content of Cu is 0.05% by mass to 2% by mass, and the first additive element group Pd, Cu, and the first additional element group are added so that the total content is 20 mass ppm or more and 500 mass ppm or less. In addition, when manufacturing a bonding wire containing the second additive element group, the total content of the second additive element group other than Pd, Cu, and the first additive element group is 20 mass ppm or more and 500 mass ppm or less. In this method, the second additive element group is also added to produce an Ag alloy. The obtained Ag alloy was cast into a rod-shaped ingot of a specific diameter by a continuous casting method. Next, the rod-shaped ingot is subjected to wire drawing processing to reduce the diameter until it becomes a specific diameter, and a bonding wire is produced. In addition, softening heat treatment may be performed in the middle of wire drawing process as needed. Then, after the wire drawing process is performed until it becomes a specific diameter, it is moved in a heat treatment furnace to perform tempering heat treatment as needed, and a bonding wire is obtained. The bonding wire of this embodiment is selected from Ca, Y, Sm, La, Ce, Nd, and Eu since the content of Pd is 0.1% by mass to 10% by mass, and the content of Cu is 0.05% by mass to 2% by mass. The total content of one or more elements in the group consisting of , Gd, and Sc is not less than 20 mass ppm and not more than 500 mass ppm, and the rest contains Ag, so that the true sphericity or thermal shock resistance of FAB can be improved. It is good, and the height of the loop formed during wiring can be designed to be small, enabling thinning of the semiconductor package. In the bonding wire of the present embodiment, by setting the contents of Pd and Cu so that the ratio of the Pd content C Pd to the Cu content C Cu (C Pd /C Cu ) becomes 2 or more, it is possible to stably obtain true FAB with higher sphericity. In addition, in the bonding wire of this embodiment, if the total ( CPd + C Cu ) of the Pd content C Pd and the Cu content C Cu is 10.05% by mass or less, the decrease in the light reflectance of the bonding wire can be suppressed. Therefore, if this bonding wire is used for bonding light-emitting elements such as LEDs, a light-emitting element with high luminous efficiency can be obtained. In addition, the bonding wire of this embodiment may contain one or more elements selected from the group consisting of Ge, Bi, and Mg, and the total content of these elements is preferably 20 mass ppm or more. And 500 mass ppm or less. In addition to Pd, Cu, and the first additional element group, one or two or more elements selected from the group consisting of Ge, Bi, and Mg may be added, so that The height of the circuit is designed to be small, which can realize the thinning of the semiconductor package. As mentioned above, although embodiment of this invention was described, these embodiment is presented as an example, and it does not intend to limit the range of invention. These embodiments can also be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments or modifications thereof are included in the inventions described in the claims and their equivalent scopes as well as the scope or gist of the invention. EXAMPLES Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to these Examples. Using an Ag raw material with a purity of 99.9% by mass or more, an Ag alloy having a composition shown in Table 1 below was melted, and a rod-shaped ingot was produced by a continuous casting method. The produced rod-shaped ingot was subjected to wire drawing processing to reduce the diameter to 25 μm, and then subjected to tempering heat treatment to obtain the bonding wires of Examples 1-10 and Comparative Examples 1-7. In addition, the wire diameters (diameters) of the bonding wires of Examples 1 to 10 and Comparative Examples 1 to 7 were all 25 μm. [Table 1]
Figure 106144543-A0304-0001
 For the obtained bonding wires of Examples 1-10 and Comparative Examples 1-7, (1) normal temperature tensile strength, (2) strength of the first neck, (3) FAB true sphericity, (4) due to The heat at the time of FAB formation was evaluated based on the length of the HAZ generated at the line portion closest to the FAB, (5) thermal cycle test, and (6) light reflectance. The specific evaluation method is as follows. (1) Tensile strength at normal temperature A wire with a length of 100 mm is stretched at room temperature (normal temperature) at 15 to 25°C until it breaks, and the load at break is measured. (2) The Strength of the First Neck After the electrodes are bonded with the bonding wire as shown in FIG. The wire W was broken, and the load when the wire W was broken from the first neck portion 14 was measured. (3) FAB sphericity For the bonding wires of Examples 1-10 and Comparative Examples 1-7, FABs with a size of 2.0 times the wire diameter were produced in a nitrogen atmosphere using a wire bonding machine (manufactured by K&S Corporation, IConn). As an evaluation of the FAB formability, after producing 500 FABs one by one for the bonding wires of Examples 1 to 10 and Comparative Examples 1 to 7, the appearance was observed with a general-purpose electron microscope (manufactured by JEOL Ltd., JSM-6510LA). Measure the lengths in the parallel direction and the vertical direction of the produced FAB lines respectively. The ratio (X/Y) of the length X in the parallel direction of the FAB line to the length Y in the vertical direction (X/Y) is used as an indicator of true sphericity. If it is 95% to 100%, it is judged as "true sphericity", and counting judgment is the number of FABs with true sphericity. The result shows the ratio of the number of FABs judged to have true sphericalness for 500 produced FABs. (4) HAZ length In (3) above, the appearance of the wires used to produce the FAB was observed using the above-mentioned general-purpose electron microscope, and the HAZ lengths formed on the wires closest to the FAB were measured, and the average value was calculated. (5) Thermal cycle test After the electrodes were bonded with a bonding wire, a semiconductor sample was obtained by sealing with silicone resin, and the semiconductor sample was evaluated using a commercially available thermal cycle test device. The temperature history is maintained at -40°C for 60 minutes, then heated up to 125°C, and kept at this temperature for 60 minutes. This was set as one cycle, and a test of 1000 cycles was performed. After the test, conduct electrical measurement and conduct conduction evaluation. The number of threads for evaluation is 500, and when the defect rate is less than 1%, it is set as "A", and when it exceeds 1%, the resistance is low, so it is set as "D". (6) Light reflectivity Bonding examples 1 to 10, comparative examples 1 to 7, and pure silver bonding wires between LEDs of the same type, resin sealing, and bonding with bonding wires of each embodiment, comparative example, and pure silver, and Make LED components. The manufactured device was subjected to total beam measurement by the method stipulated in JIS C8152. The measurement results were expressed as percentages by converting the light intensity of each Example and Comparative Example when the light intensity of LEDs bonded with pure silver wires was taken as 100%. [Table 2]
Figure 106144543-A0304-0002
 The results are shown in Table 2. The following results were obtained in Examples 1 to 10: the tensile strength at room temperature is above 10.0 gf, the strength of the first neck is above 10.5 gf, the HAZ length is below 150 μm, and the true sphericalness of FAB is 100 %, the thermal cycle test was "A", the light reflectance was 90% or more, and the evaluation items were all good. In Comparative Example 1, since the content of Pd was less than 0.1% by mass, the tensile strength at room temperature and the strength of the first neck portion were low, and the evaluation of the thermal cycle test was "D". In Comparative Example 2, since the total content of one or more elements selected from the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, Gd, and Sc does not reach 20 mass ppm, it is heat resistant The performance is low, and the evaluation of the thermal cycle test is "D". In Comparative Example 3, since the Cu content was less than 0.05% by mass, the strength of the first neck portion was low, and the evaluation of the thermal cycle test was “D”. In Comparative Example 4, since the content of Cu is less than 0.05% by mass, but the content of Pd is more than that of Comparative Example 3, the tensile strength at room temperature and the strength of the first neck are higher, and good results are obtained. However, in Comparative Example 4, the true sphericity of FAB deteriorated. In addition, in Comparative Example 4, as the sphericalness of the FAB deteriorated, the adhesion between the first junction and the electrode deteriorated, so the evaluation of the thermal cycle test was "D". That is, in Comparative Example 4, since the content of Cu was less than 0.05% by mass, the room temperature tensile strength, the strength of the first neck, and the true sphericalness of the FAB could not be simultaneously achieved. In Comparative Example 5, since the content of Cu exceeded 2% by mass, the true sphericity of the FAB deteriorated, and the evaluation of the thermal cycle test was "D". In Comparative Example 6, since the content of Pd exceeded 10% by mass, the light reflectance decreased. Also, in Comparative Example 6, since the total content of one or more elements selected from the group consisting of Ge, Bi, and Mg exceeds 500 mass ppm, the true sphericity of the FAB deteriorates, and the evaluation of the thermal cycle test to "D". In Comparative Example 7, since the content of Pd exceeded 10% by mass, the light reflectance decreased. Also, in Comparative Example 7, since the total content of one or more elements selected from the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, Gd, and Sc exceeds 500 mass ppm, The true sphericity of FAB becomes worse.

10‧‧‧電極12‧‧‧第1接合部14‧‧‧第1頸部H‧‧‧迴路高度R‧‧‧大晶粒區域W‧‧‧線10‧‧‧Electrode 12‧‧‧First junction 14‧‧‧First neck H‧‧‧Loop height R‧‧‧Large grain area W‧‧‧Line

圖1係放大表示將電極間接線之線W的圖。 圖2係產生HAZ(Heat Affected Zone)之接合線之表面結晶組織之顯微鏡照片。FIG. 1 is an enlarged view showing a line W connecting electrodes. Fig. 2 is a photomicrograph of the surface crystalline structure of the bonding wire that produces HAZ (Heat Affected Zone).

Claims (6)

一種接合線，其Pd之含量為0.1質量%以上且10質量%以下、Cu之含量為0.05質量%以上且2質量%以下、選自由Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及Sc所組成之群中之1種或2種以上元素之合計含量為20質量ppm以上且500質量ppm以下、選自由Bi、及Mg所組成之群中之1種或2種以上元素之合計含量為0質量ppm以上且500質量ppm以下，含有Nd、Gd及Sc中至少1種元素，且剩餘部分包含Ag。 A bonding wire having a Pd content of 0.1 mass % to 10 mass %, a Cu content of 0.05 mass % to 2 mass %, selected from the group consisting of Ca, Y, Sm, La, Ce, Nd, Eu, and Gd , and the total content of one or more elements in the group consisting of Sc is 20 mass ppm to 500 mass ppm, and one or more elements selected from the group consisting of Bi, and Mg The total content is not less than 0 mass ppm and not more than 500 mass ppm, at least one element of Nd, Gd, and Sc is contained, and the remainder contains Ag. 如請求項1之接合線，其中Pd之含量CPd相對於Cu之含量CCu之比率(CPd/CCu)為2以上。 The bonding wire according to claim 1, wherein the ratio of the Pd content C Pd to the Cu content C Cu (C Pd /C Cu ) is 2 or more. 如請求項1之接合線，其中Cu之含量CCu與Pd之含量CPd之合計為10.05質量%以下。 The bonding wire according to claim 1, wherein the total of Cu content C Cu and Pd content C Pd is 10.05% by mass or less. 如請求項2之接合線，其中Cu之含量CCu與Pd之含量CPd之合計為10.05質量%以下。 The bonding wire according to claim 2, wherein the total of Cu content C Cu and Pd content C Pd is 10.05% by mass or less. 如請求項1至4中任一項之接合線，其中選自由Bi、及Mg所組成之群中之1種或2種以上元素之合計含量為0質量ppm。 The bonding wire according to any one of claims 1 to 4, wherein the total content of one or more elements selected from the group consisting of Bi and Mg is 0 ppm by mass. 如請求項1至4中任一項之接合線，其中選自由Bi、及Mg所組成之群中之1種或2種以上元素之合計含量為20質量ppm以上且500質量ppm以下。 The bonding wire according to any one of claims 1 to 4, wherein the total content of one or more elements selected from the group consisting of Bi and Mg is 20 mass ppm or more and 500 mass ppm or less.
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JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
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