TWI373382B - - Google Patents

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Publication number
TWI373382B
TWI373382B TW98102770A TW98102770A TWI373382B TW I373382 B TWI373382 B TW I373382B TW 98102770 A TW98102770 A TW 98102770A TW 98102770 A TW98102770 A TW 98102770A TW I373382 B TWI373382 B TW I373382B
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TW
Taiwan
Prior art keywords
wire
gold
silver
palladium
component
Prior art date
Application number
TW98102770A
Other languages
Chinese (zh)
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TW201028227A (en
Original Assignee
Lee Jun Der
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Lee Jun Der filed Critical Lee Jun Der
Priority to TW98102770A priority Critical patent/TWI373382B/zh
Publication of TW201028227A publication Critical patent/TW201028227A/en
Application granted granted Critical
Publication of TWI373382B publication Critical patent/TWI373382B/zh

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

This invention provides a method for manufacturing a composite metal wire, comprising the steps of: providing a main metallic material containing gold ingredient and silver ingredient; placing the main metallic material in a vacuum furnace and adding different proportions of palladium into the vacuum furnace as secondary metallic material to be mixed, and then performing mix smelting to produce a silver-palladium alloy melted liquid; then, continuously casting the silver-palladium alloy melting liquid and drawing into a silver-palladium alloy wire; and finally, drawing the gold-silver-palladium alloy wire into a gold-silver-palladium alloy solder wire having a predetermined diameter. The gold-silver-palladium alloy solder wire manufactured by mixing three metallic materials of gold, silver, and palladium not only can reach the efficacy of metallic bonding wire made of pure gold, but also can greatly reduce the cost.

Description

1373382 VI. Description of the Invention: [Technical Field] The present invention relates to a metal wire, and more particularly to a method for producing a composite gold wire used in a semiconductor packaging process and a finished product thereof. [Prior Art] In the packaging process of a semiconductor 7G device, a metal fresh wire is often connected to a wafer and a circuit substrate by wire bonding, and is electrically connected to the wafer and the earth plate by a metal bonding wire to serve as a between the aB chip and the circuit substrate. Signal and current transfer path. In general, the main characteristics of load strength, ductility, bending, melting point, electrical properties, hardness, and soldering ability of IC wafers are related to the material being measured. The above characteristics will affect the lifetime of the semiconductor device and the lifetime. The specifications of the metal bonding wires differ depending on the type of the chip and the circuit substrate. I belongs to the rod line and is mainly made of pure gold material. The gold seal of the pure gold seal has better physical properties such as ductility and electrical conductivity. However, the high cost of the metal fresh wire from the material also increases the cost of the overall semiconductor component. (4) The subject of the present invention is to provide a metal wire bond which can achieve a material cost of material and can greatly reduce the material cost. The invention is mainly to solve the problem of the present invention. Made of gold, silver and Ji San 'Feisu, it can reach the metal wire of pure gold. 3

Claims (1)

1373382 c . c --------: VII. Patent application scope: 1. A method for manufacturing a composite gold wire for wire bonding of semiconductor, LED and SAW semiconductor packages, comprising the following steps: a) The main metal raw material and the palladium component of the gold component and the silver component are provided as the metal element, the weight percentage of the gold component is 8.00~30.00%, the weight percentage of the silver component is 66.00~90.00%, and the weight of the 16 component is The ratio is 0.01 to 6.00%, and the main metal material is placed in a vacuum furnace, and a secondary metal element of a palladium component is added to the vacuum furnace for C-mixing smelting to form a gold-silver-palladium mixture. (6) the gold-silver-palladium financial melt liquid is continuously drawn and drawn to form a gold-silver alloy wire; and (C) the gold-silver-palladium alloy wire is drawn into a predetermined wire diameter of gold, silver and palladium alloy welding. After the wire is finished, the gold-silver-palladium alloy wire is surface-cleaned, dried and thermally annealed. 2. The method for preparing a composite gold wire according to claim 1, wherein the gold-silver-palladium financial melt liquid in the step a is continuously drawn and drawn to form a gold and silver having a predetermined wire diameter of 4 to 8 mm. The alloy wire is coiled and the gold, silver and palladium alloy wires are taken up by a retractor, and the composition of the gold, silver and palladium alloy wires is analyzed. 3. The method for preparing a composite gold wire according to the second aspect of the patent application, wherein, in the step c, the gold-silver Is alloy wire having the original wire diameter of 4 to 8 mm is pulled by a first thick wire drawing machine. Retracting the wire diameter to 3mm or less, and then stretching the wire diameter to 1·〇〇_ or 1.00mm 10 * ' > Λ *«:. · · ·· tl 0131291471 -0 1373382 /0丨年月? p repair (more) the original, and then stretch the wire diameter to 0.18 mm or less by a first thin wire drawing machine, and then pass the gold, silver and palladium wire below 0.18mm or 0.18mm in sequence. The second thin wire drawing machine, a very fine wire drawing machine, and a super-fine wire drawing machine stretch the gold-silver-palladium alloy wire into a gold-silver Ιε alloy wire having a predetermined wire diameter of 0.050 mm to 0.010 mm. 4. A composite gold wire produced by the method of the method of the composite gold wire for wire bonding of the semiconductor package of 1C, LED and SAW of claim 1, which is composed of the following components: Weight percentage is 8.00~30.00 % gold component; silver component of 66.00 to 90.00% by weight; and Ig component of 0.01-6.00% by weight.
098102770 10133Q3212-0
TW98102770A 2009-01-23 2009-01-23 TWI373382B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98102770A TWI373382B (en) 2009-01-23 2009-01-23

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW98102770A TWI373382B (en) 2009-01-23 2009-01-23
JP2009233478A JP5541440B2 (en) 2009-01-23 2009-10-07 Alloy wire and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201028227A TW201028227A (en) 2010-08-01
TWI373382B true TWI373382B (en) 2012-10-01

Family

ID=42703175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98102770A TWI373382B (en) 2009-01-23 2009-01-23

Country Status (2)

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JP (1) JP5541440B2 (en)
TW (1) TWI373382B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4771562B1 (en) 2011-02-10 2011-09-14 田中電子工業株式会社 Ag-Au-Pd ternary alloy bonding wire
TWI365458B (en) * 2011-07-11 2012-06-01
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
JP5165810B1 (en) * 2012-09-12 2013-03-21 田中電子工業株式会社 Silver gold palladium alloy bump wire
JP5399581B1 (en) * 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
KR20160030777A (en) * 2014-09-11 2016-03-21 엠케이전자 주식회사 Silver alloy bonding wire and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10130882A (en) * 1996-10-24 1998-05-19 Tokusai:Kk Composite metallic wire for electronic wire and its production
JP3612180B2 (en) * 1997-08-20 2005-01-19 新日本製鐵株式会社 Gold-silver alloy fine wire for semiconductor devices
JPH11126788A (en) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ic-chip connecting gold alloy wire
JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
JP3329286B2 (en) * 1998-11-09 2002-09-30 三菱マテリアル株式会社 Gold alloy wires for bonding semiconductor devices
JP5010495B2 (en) * 2007-02-06 2012-08-29 新日鉄マテリアルズ株式会社 Gold wire for semiconductor element connection

Also Published As

Publication number Publication date
TW201028227A (en) 2010-08-01
JP5541440B2 (en) 2014-07-09
JP2010171378A (en) 2010-08-05

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