JP2010171378A - Alloy wire, and method of manufacturing the same - Google Patents

Alloy wire, and method of manufacturing the same Download PDF

Info

Publication number
JP2010171378A
JP2010171378A JP2009233478A JP2009233478A JP2010171378A JP 2010171378 A JP2010171378 A JP 2010171378A JP 2009233478 A JP2009233478 A JP 2009233478A JP 2009233478 A JP2009233478 A JP 2009233478A JP 2010171378 A JP2010171378 A JP 2010171378A
Authority
JP
Japan
Prior art keywords
gold
silver
wire
alloy wire
palladium alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009233478A
Other languages
Japanese (ja)
Other versions
JP5541440B2 (en
Inventor
Junde Li
俊徳 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2010171378A publication Critical patent/JP2010171378A/en
Application granted granted Critical
Publication of JP5541440B2 publication Critical patent/JP5541440B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an alloy wire which is manufactured using three kinds of metal which are gold, silver and palladium, has the same effects with a pure-gold wire, and is lowered in cost, and to provide a method of manufacturing the same. <P>SOLUTION: In a step 100, a principal metal material containing constituents of gold and silver is provided. In a step 102c, the principal metal material is put in a vacuum furnace, and a secondary metallic raw material containing palladium is mixed in the vacuum furnace to produce a gold, silver and palladium alloy molten liquid. In a step 102d, the gold, silver and palladium alloy molten liquid is continuously cast and drawn to form a gold, silver and palladium alloy wire. In a step 104, the gold, silver and palladium alloy wire is drawn into a gold, silver and palladium alloy wire having a predetermined wire diameter. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、金線に関し、特に、半導体パッケージ工程における合金線およびその製造方法に関する。   The present invention relates to a gold wire, and more particularly to an alloy wire in a semiconductor package process and a method for manufacturing the same.

半導体デバイスのパッケージ工程において、金線がチップおよび基板に連接される。金線によりチップと基板とが電気的に接続され、チップと基板との間での信号および電流伝達を行う。   In the semiconductor device packaging process, the gold wire is connected to the chip and the substrate. The chip and the substrate are electrically connected by the gold wire, and signals and current are transmitted between the chip and the substrate.

金線の負荷強度、延伸性、湾曲性、融点、電気性、硬度、ICチップとの接続能力など主要な特性は、用いた材料と関係がある。上記の特性は、半導体デバイスの寿命および安定性に悪影響を及ぼす。チップおよび基板の形態により、用いられる金線の規格も異なる。   Main characteristics such as load strength, stretchability, bendability, melting point, electrical property, hardness, and ability to connect to an IC chip are related to the materials used. The above characteristics adversely affect the lifetime and stability of the semiconductor device. The standard of the gold wire used varies depending on the form of the chip and the substrate.

従来の金線は、主に純金から製造されている。純金から製造された金線は、比較的良好な延伸性および導電性という物理的性質を有する。しかし、純金材料から造られる金線は、コストが高いため、半導体デバイスのコストを増加させた。そのため、純金金線と同等の効果を有し、大幅にコストを下げる金線を提供するのが本発明の課題である。
一方、先行技術として、例えば特許文献1は、金と、銀と、ゲルマニウム,シリコン,アルミニウム,又は銅のいずれか1つと、からなる金合金ボンディングワイヤの組成を開示している。
Conventional gold wires are mainly manufactured from pure gold. Gold wires made from pure gold have the physical properties of relatively good stretchability and conductivity. However, a gold wire made from a pure gold material has a high cost, thus increasing the cost of a semiconductor device. Therefore, it is an object of the present invention to provide a gold wire that has an effect equivalent to that of a pure gold wire and greatly reduces the cost.
On the other hand, as a prior art, for example, Patent Document 1 discloses a composition of a gold alloy bonding wire made of gold, silver, and any one of germanium, silicon, aluminum, or copper.

特許第4130843号公報Japanese Patent No. 4130843

本発明の目的は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同様の効果を有し、コストを下げる合金線およびその製造方法を提供することにある。   An object of the present invention is to provide an alloy wire that is manufactured from three kinds of metals, gold, silver, and palladium, has the same effect as a pure gold wire, and reduces the cost, and a method for manufacturing the same.

上述の目的を達成するため、本発明は、合金線およびその製造方法を提供する。本発明の合金線およびその製造方法は、a工程において、金および銀の成分を含んだ主要金属材料が提供される。b工程において、主要金属材料が真空溶炉内に入れられ、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、金銀パラジウム合金溶解液が作り出される。c工程において、金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて金銀パラジウム合金線材が形成される。d工程において、金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工される。   In order to achieve the above object, the present invention provides an alloy wire and a method for producing the same. In the alloy wire of the present invention and the method for producing the same, a main metal material containing gold and silver components is provided in step a. In step b, when the main metal material is placed in a vacuum furnace and a secondary raw metal material containing palladium is mixed in the vacuum furnace, a gold-silver-palladium alloy solution is produced. In step c, the gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire. In step d, the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.

本発明の合金線は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同等の効果を有し、大幅にコストを削減することができる。   The alloy wire of the present invention is manufactured from three kinds of metals, gold, silver and palladium, and has the same effect as a pure gold wire, and can greatly reduce the cost.

本発明の一実施形態による合金線の製造方法を示す流れ図である。2 is a flowchart showing a method of manufacturing an alloy wire according to an embodiment of the present invention. 図1の細部を示す流れ図である。2 is a flowchart showing details of FIG. 1.

以下、本発明の実施形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図1および図2を参照する。図1は、本発明の一実施形態による合金線の製造方法を示す流れ図である。図2は、図1の細部を示す流れ図である。図1および図2に示すように、本発明の合金線の製造方法は、まず、工程100において、金および銀の成分を含んだ主要金属材料が提供される。   Please refer to FIG. 1 and FIG. FIG. 1 is a flowchart showing a method of manufacturing an alloy wire according to an embodiment of the present invention. FIG. 2 is a flowchart showing details of FIG. As shown in FIG. 1 and FIG. 2, in the method of manufacturing an alloy wire of the present invention, first, in step 100, a main metallic material containing gold and silver components is provided.

工程102において、溶解精錬が行われる。金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ(工程102a)、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入され、溶解される(工程102b)。これにより、真空溶炉が金銀パラジウム合金溶解液を作り出す(工程102c)。金銀パラジウム合金溶解液は、金が8.00〜30.00重量%、銀が66.00〜90.00重量%、パラジウムが0.01〜6.00重量%含まれる。   In step 102, melt refining is performed. The main metallic material containing the components of gold and silver is put in the vacuum furnace (step 102a), and then the secondary raw metallic material containing palladium is mixed and melted in the vacuum furnace (see FIG. Step 102b). As a result, the vacuum furnace creates a gold-silver-palladium alloy solution (step 102c). The gold-silver-palladium alloy solution contains 8.00 to 30.00% by weight of gold, 66.00 to 90.00% by weight of silver, and 0.01 to 6.00% by weight of palladium.

金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4〜8 mmの金銀パラジウム合金線材が形成される(工程102d)。リールにより金銀パラジウム合金線材が巻き取られる(工程102e)。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる(工程102f)。   A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm (step 102d). The gold-silver-palladium alloy wire is wound up by the reel (step 102e). Whether the component ratio is correct or not is analyzed for the gold-silver-palladium alloy wire (step 102f).

工程104において、鋳造された金銀パラジウム合金線材が引き伸ばされる。線径が4〜8 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる(工程104a)。引き続き、第2の太線伸線機により1mm以下に引き伸ばされる(工程104b)。第1の細線伸線機により0.18 mm以下に引き伸ばされる(工程104c)。0.18 mm以下の金銀パラジウム合金線材が第2の細線伸線機(工程104d)、極細線伸線機(工程104e)および超極細線伸線機(工程104f)に順番に引き伸ばされて0.050 mm (2.00mil)〜0.010 mm (0.40mil)の金銀パラジウム合金線となる。   In step 104, the cast gold-silver-palladium alloy wire is drawn. A gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm is drawn to 3 mm or less by the first thick wire drawing machine (step 104a). Subsequently, it is drawn to 1 mm or less by the second thick wire drawing machine (step 104b). It is drawn to 0.18 mm or less by the first fine wire drawing machine (step 104c). A gold-silver-palladium alloy wire of 0.18 mm or less is drawn in turn to a second fine wire drawing machine (process 104d), an extra fine wire drawing machine (process 104e) and a super extra fine wire drawing machine (process 104f) to 0.050 mm ( 2.00 mil) to 0.010 mm (0.40 mil) gold-silver-palladium alloy wire.

工程106において、金銀パラジウム合金線の表面が洗浄される。   In step 106, the surface of the gold-silver-palladium alloy wire is cleaned.

工程108において、金銀パラジウム合金線に対して、乾燥およびアニール処理が行われることにより、金銀パラジウム合金線の破断強度(Breaking Load)、伸度(Elongation) など物理的特性が所定範囲内に限定されるようにする。   In step 108, the gold-silver-palladium alloy wire is dried and annealed, so that physical properties such as breaking strength and elongation of the gold-silver-palladium alloy wire are limited within a predetermined range. So that

本発金銀パラジウム合金線は、IC、LEDおよびSAWのパッケージにおいて、導線として用いられる   This gold-silver-palladium alloy wire is used as a conductor in IC, LED and SAW packages.

以下、本発明の三つの実施形態を詳細に説明する。   Hereinafter, three embodiments of the present invention will be described in detail.

第1の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が30.00重量%、銀が66.00重量%、パラジウムが4.00重量%含まれる。
First Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 30.00% by weight of gold, 66.00% by weight of silver, and 4.00% by weight of palladium.

金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。   A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.

鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が4 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。   When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 4 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is drawn in turn by a second fine wire drawing machine, a super fine wire drawing machine, and a super fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.

金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。   When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.

第2の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が8.00重量%、銀が86.00重量%、パラジウムが6.00重量%含まれる。
Second Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 8.00% by weight of gold, 86.00% by weight of silver, and 6.00% by weight of palladium.

金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が6mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。   A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 6 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.

鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が6 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。   When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 6 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is successively drawn by a second fine wire drawing machine, an extra fine wire drawing machine, and an extra fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.

金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。   When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.

第3の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が9.99重量%、銀が90.00重量%、パラジウムが0.01重量%含まれる。
Third Embodiment A main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 9.99% by weight of gold, 90.00% by weight of silver, and 0.01% by weight of palladium.

金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が8mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。   A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 8 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.

鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が8 mmの金銀パラジウム合金線材が第1の太線伸線機により2mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。   When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 8 mm is drawn to 2 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is successively drawn by a second fine wire drawing machine, an extra fine wire drawing machine, and an extra fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.

金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。   When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.

金、銀およびパラジウムの三種の金属を用いて調合した合金線は、純金金線の効果を有し、大幅にコストを削減することができる。   An alloy wire prepared by using three kinds of metals, gold, silver and palladium, has the effect of a pure gold wire, and can greatly reduce the cost.

本発明では好適な実施形態を前述の通りに開示したが、これらは決して本発明を限定するものではなく、当該技術を熟知する者は誰でも、本発明の精神と領域を脱しない範囲内で各種の変更や修正を加えることができる。従って、本発明の保護の範囲は、特許請求の範囲で指定した内容を基準とする。   Although preferred embodiments of the present invention have been disclosed as described above, they are not intended to limit the present invention in any way, and anyone skilled in the art is within the spirit and scope of the present invention. Various changes and modifications can be made. Therefore, the scope of protection of the present invention is based on the contents specified in the claims.

工程100 主要金属材料が提供される
工程102 溶解精錬が行われる
工程104 引き伸しが行われる
工程106 表面が洗浄される
工程108 アニール処理が行われる
工程102a 真空溶炉内に入れられる
工程102b 攪拌および溶解が行われる
工程102c 金銀パラジウム合金溶解液が作り出される
工程102d 金銀パラジウム合金線材が形成される
工程102e 金銀パラジウム合金線材が巻き取られる
工程102f 成分分析が行われる
工程104a 第1の太線伸線機により引き伸ばしが行われる
工程104b 第2の太線伸線機により引き伸ばしが行われる
工程104c 第1の細線伸線機により引き伸ばしが行われる
工程104d 第2の細線伸線機により引き伸ばしが行われる
工程104e 極細線伸線機により引き伸ばしが行われる
工程104f 超極細線伸線機により引き伸ばしが行われる
Step 100 Main metal material provided Step 102 Melting and refining step 104 Stretching step 106 Surface cleaning step 108 Annealing step 102a Placed in vacuum furnace 102b Stirring Step 102c in which gold-silver palladium alloy solution is produced 102d Step in which gold-silver-palladium alloy wire is formed 102e Step in which gold-silver-palladium alloy wire is wound up 102f Step in which component analysis is performed 104a First thick wire drawing Step 104b in which stretching is performed by the machine Step 104c in which stretching is performed by the second thick wire drawing machine Step 104d in which stretching is performed by the first thin wire drawing machine Step 104d in which stretching is performed by the second thin wire drawing machine Stretching is performed by an extra fine wire drawing machine. Step 104f Stretching is performed by a super fine wire drawing machine

Claims (8)

金および銀の成分を含んだ主要金属材料が提供されるa工程と、
前記主要金属材料が真空溶炉内に入れられ、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、金銀パラジウム合金溶解液が作り出されるb工程と、
前記金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて金銀パラジウム合金線材が形成されるc工程と、
前記金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工されるd工程と、を含むことを特徴とする合金線の製造方法。
A step in which a main metallic material containing gold and silver components is provided
B step in which a gold-silver-palladium alloy solution is created when the main metal material is placed in a vacuum furnace and a secondary raw metal material containing palladium is mixed into the vacuum furnace.
C step in which the gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire;
A d-process in which the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.
前記a工程は、金が8.00〜30.00重量%含まれることを特徴とする請求項1に記載の合金線の製造方法。   2. The method of manufacturing an alloy wire according to claim 1, wherein the step a includes 8.00 to 30.00 wt% of gold. 前記a工程は、銀が66.00〜90.00重量%含まれることを特徴とする請求項2に記載の合金線の製造方法。   3. The method of manufacturing an alloy wire according to claim 2, wherein the step a includes 66.00 to 90.00% by weight of silver. 前記b工程は、パラジウムが0.01〜6.00重量%含まれることを特徴とする請求項3に記載の合金線の製造方法。   The said b process contains 0.01 to 6.00 weight% of palladium, The manufacturing method of the alloy wire of Claim 3 characterized by the above-mentioned. 前記b工程の前記金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4〜8 mmの前記金銀パラジウム合金線材が形成され、リールにより前記金銀パラジウム合金線材が巻き取られ、前記金銀パラジウム合金線材の成分分析が行われることを特徴とする請求項1に記載の合金線の製造方法。   The gold-silver-palladium alloy solution in step b is continuously cast and stretched to form the gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm. The gold-silver-palladium alloy wire is wound up by a reel, 2. The alloy wire manufacturing method according to claim 1, wherein component analysis of the gold-silver-palladium alloy wire is performed. 前記d工程において、線径が4〜8 mmの前記金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされ、第2の太線伸線機により1mm以下に引き伸ばされ、第1の細線伸線機により0.18 mm以下に引き伸ばされ、0.18 mm以下の前記金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの前記金銀パラジウム合金線となることを特徴とする請求項5に記載の合金線の製造方法。   In the step d, the gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm is drawn to 3 mm or less by the first thick wire drawing machine, and drawn to 1 mm or less by the second thick wire drawing machine. The wire is drawn to 0.18 mm or less by a fine wire drawing machine, and the gold-silver-palladium alloy wire material of 0.18 mm or less is drawn in turn to a second fine wire drawing machine, extra fine wire drawing machine and super extra fine wire drawing machine to 0.050 mm. 6. The method of manufacturing an alloy wire according to claim 5, wherein the gold-silver-palladium alloy wire has a thickness of ˜0.010 mm. 前記d工程の後に、前記金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われることを特徴とする請求項6に記載の合金線の製造方法。   7. The method of manufacturing an alloy wire according to claim 6, wherein after the step d, if the surface of the gold-silver-palladium alloy wire is washed, drying and annealing treatment are performed. 8.00〜30.00重量%の金と、
66.00〜90.00重量%の銀と、
0.01〜6.00重量%のパラジウムと、を含むことを特徴とする合金線。
8.00-30.00% by weight gold,
66.00-90.00% by weight silver,
An alloy wire comprising 0.01 to 6.00% by weight of palladium.
JP2009233478A 2009-01-23 2009-10-07 Alloy wire and manufacturing method thereof Active JP5541440B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW98102770A TW201028227A (en) 2009-01-23 2009-01-23 Method for manufacturing composite metal wire and product thereof
TW098102770 2009-01-23

Publications (2)

Publication Number Publication Date
JP2010171378A true JP2010171378A (en) 2010-08-05
JP5541440B2 JP5541440B2 (en) 2014-07-09

Family

ID=42703175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009233478A Active JP5541440B2 (en) 2009-01-23 2009-10-07 Alloy wire and manufacturing method thereof

Country Status (2)

Country Link
JP (1) JP5541440B2 (en)
TW (1) TW201028227A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012108082A1 (en) 2011-02-10 2012-08-16 田中電子工業株式会社 Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
JP2013021280A (en) * 2011-07-11 2013-01-31 Profound Material Technology Co Ltd Composite silver wire
JP5165810B1 (en) * 2012-09-12 2013-03-21 田中電子工業株式会社 Silver gold palladium alloy bump wire
JP5399581B1 (en) * 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
JP2016092419A (en) * 2014-10-31 2016-05-23 日亜化学工業株式会社 Light-emitting device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
KR20160030777A (en) * 2014-09-11 2016-03-21 엠케이전자 주식회사 Silver alloy bonding wire and manufacturing method thereof
JP7271414B2 (en) 2019-12-26 2023-05-11 文化シヤッター株式会社 Storage structure for switchgear

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10130882A (en) * 1996-10-24 1998-05-19 Tokyo Tungsten Co Ltd Composite metallic wire for electronic wire and its production
JPH1167812A (en) * 1997-08-20 1999-03-09 Nippon Steel Corp Gold and silver alloy thin wire for semiconductor device
JPH11126788A (en) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ic-chip connecting gold alloy wire
JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
JP2000150562A (en) * 1998-11-09 2000-05-30 Mitsubishi Materials Corp Bonding gold alloy fine wire for semiconductor device
JP2008218994A (en) * 2007-02-06 2008-09-18 Nippon Steel Materials Co Ltd Gold wire for connecting semiconductor element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10130882A (en) * 1996-10-24 1998-05-19 Tokyo Tungsten Co Ltd Composite metallic wire for electronic wire and its production
JPH1167812A (en) * 1997-08-20 1999-03-09 Nippon Steel Corp Gold and silver alloy thin wire for semiconductor device
JPH11126788A (en) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Ic-chip connecting gold alloy wire
JPH11288962A (en) * 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd Bonding wire
JP2000150562A (en) * 1998-11-09 2000-05-30 Mitsubishi Materials Corp Bonding gold alloy fine wire for semiconductor device
JP2008218994A (en) * 2007-02-06 2008-09-18 Nippon Steel Materials Co Ltd Gold wire for connecting semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012108082A1 (en) 2011-02-10 2012-08-16 田中電子工業株式会社 Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
US9103001B2 (en) 2011-02-10 2015-08-11 Tanaka Denshi Kogyo K.K. Ag—Au—Pd ternary alloy bonding wire
JP2013021280A (en) * 2011-07-11 2013-01-31 Profound Material Technology Co Ltd Composite silver wire
JP5165810B1 (en) * 2012-09-12 2013-03-21 田中電子工業株式会社 Silver gold palladium alloy bump wire
JP5399581B1 (en) * 2013-05-14 2014-01-29 田中電子工業株式会社 High speed signal bonding wire
JP2016092419A (en) * 2014-10-31 2016-05-23 日亜化学工業株式会社 Light-emitting device

Also Published As

Publication number Publication date
TW201028227A (en) 2010-08-01
TWI373382B (en) 2012-10-01
JP5541440B2 (en) 2014-07-09

Similar Documents

Publication Publication Date Title
JP5541440B2 (en) Alloy wire and manufacturing method thereof
US8101123B2 (en) Composite alloy bonding wire and manufacturing method thereof
JP2010167490A (en) Method for producing alloy wire and product of the alloy wire
US20090297391A1 (en) Manufacturing method for a silver alloy bonding wire and products thereof
JP2016524811A (en) Copper bonding wire and manufacturing method thereof
KR20150032900A (en) Bonding wire
CN103199073A (en) Silver palladium alloy monocrystal bonding wire and manufacturing method thereof
WO2014073555A1 (en) Bonding wire
WO2014137288A1 (en) Palladium coated copper wire for bonding applications
KR20170001555A (en) A silver alloy material and method for manufacturing the silver alloy material
TW201432716A (en) Silver alloy soldering wires for semiconductor packaging
JPH0379416B2 (en)
JP2008174779A (en) Wire material and its manufacturing method
CN104299954B (en) A kind of copper cash for semiconductor welding
US20090191088A1 (en) Manufacturing method for a composite metal bonding wire and products thereof
JP2010040944A (en) Copper insulation bonding wire, and manufacturing method thereof
TWI802555B (en) bonding wire
CN101569968B (en) Silver alloy bonding wire for packing wires and manufacturing method thereof
US20100239455A1 (en) Composite alloy bonding wire and manufacturing method thereof
CN101786155A (en) Composite gold wire and manufacture method thereof
JP2013048169A (en) Wire for ball bonding
JP2009117605A (en) Gold alloy wire for ball bonding
KR101912983B1 (en) Ag-Au ALLOY BONDING WIRE
WO2022163606A1 (en) Aluminum bonding wire for power semiconductor
TW200944307A (en) Method of making silver alloy solder wire for package wire and product thereof

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120416

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120925

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20120925

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20121113

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130201

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130524

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130607

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131126

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131218

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140422

R150 Certificate of patent or registration of utility model

Ref document number: 5541440

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250