JP2010171378A - Alloy wire, and method of manufacturing the same - Google Patents
Alloy wire, and method of manufacturing the same Download PDFInfo
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- JP2010171378A JP2010171378A JP2009233478A JP2009233478A JP2010171378A JP 2010171378 A JP2010171378 A JP 2010171378A JP 2009233478 A JP2009233478 A JP 2009233478A JP 2009233478 A JP2009233478 A JP 2009233478A JP 2010171378 A JP2010171378 A JP 2010171378A
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- gold
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- alloy wire
- palladium alloy
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 18
- 239000000956 alloy Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910001252 Pd alloy Inorganic materials 0.000 claims abstract description 73
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 39
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000010931 gold Substances 0.000 claims abstract description 29
- 229910052737 gold Inorganic materials 0.000 claims abstract description 24
- 239000004332 silver Substances 0.000 claims abstract description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 19
- 239000007769 metal material Substances 0.000 claims abstract description 18
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 17
- 238000005491 wire drawing Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910001316 Ag alloy Inorganic materials 0.000 abstract 5
- 239000007788 liquid Substances 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
本発明は、金線に関し、特に、半導体パッケージ工程における合金線およびその製造方法に関する。 The present invention relates to a gold wire, and more particularly to an alloy wire in a semiconductor package process and a method for manufacturing the same.
半導体デバイスのパッケージ工程において、金線がチップおよび基板に連接される。金線によりチップと基板とが電気的に接続され、チップと基板との間での信号および電流伝達を行う。 In the semiconductor device packaging process, the gold wire is connected to the chip and the substrate. The chip and the substrate are electrically connected by the gold wire, and signals and current are transmitted between the chip and the substrate.
金線の負荷強度、延伸性、湾曲性、融点、電気性、硬度、ICチップとの接続能力など主要な特性は、用いた材料と関係がある。上記の特性は、半導体デバイスの寿命および安定性に悪影響を及ぼす。チップおよび基板の形態により、用いられる金線の規格も異なる。 Main characteristics such as load strength, stretchability, bendability, melting point, electrical property, hardness, and ability to connect to an IC chip are related to the materials used. The above characteristics adversely affect the lifetime and stability of the semiconductor device. The standard of the gold wire used varies depending on the form of the chip and the substrate.
従来の金線は、主に純金から製造されている。純金から製造された金線は、比較的良好な延伸性および導電性という物理的性質を有する。しかし、純金材料から造られる金線は、コストが高いため、半導体デバイスのコストを増加させた。そのため、純金金線と同等の効果を有し、大幅にコストを下げる金線を提供するのが本発明の課題である。
一方、先行技術として、例えば特許文献1は、金と、銀と、ゲルマニウム,シリコン,アルミニウム,又は銅のいずれか1つと、からなる金合金ボンディングワイヤの組成を開示している。
Conventional gold wires are mainly manufactured from pure gold. Gold wires made from pure gold have the physical properties of relatively good stretchability and conductivity. However, a gold wire made from a pure gold material has a high cost, thus increasing the cost of a semiconductor device. Therefore, it is an object of the present invention to provide a gold wire that has an effect equivalent to that of a pure gold wire and greatly reduces the cost.
On the other hand, as a prior art, for example, Patent Document 1 discloses a composition of a gold alloy bonding wire made of gold, silver, and any one of germanium, silicon, aluminum, or copper.
本発明の目的は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同様の効果を有し、コストを下げる合金線およびその製造方法を提供することにある。 An object of the present invention is to provide an alloy wire that is manufactured from three kinds of metals, gold, silver, and palladium, has the same effect as a pure gold wire, and reduces the cost, and a method for manufacturing the same.
上述の目的を達成するため、本発明は、合金線およびその製造方法を提供する。本発明の合金線およびその製造方法は、a工程において、金および銀の成分を含んだ主要金属材料が提供される。b工程において、主要金属材料が真空溶炉内に入れられ、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、金銀パラジウム合金溶解液が作り出される。c工程において、金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて金銀パラジウム合金線材が形成される。d工程において、金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工される。 In order to achieve the above object, the present invention provides an alloy wire and a method for producing the same. In the alloy wire of the present invention and the method for producing the same, a main metal material containing gold and silver components is provided in step a. In step b, when the main metal material is placed in a vacuum furnace and a secondary raw metal material containing palladium is mixed in the vacuum furnace, a gold-silver-palladium alloy solution is produced. In step c, the gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire. In step d, the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.
本発明の合金線は、金、銀およびパラジウムの三種の金属から製造され、純金金線と同等の効果を有し、大幅にコストを削減することができる。 The alloy wire of the present invention is manufactured from three kinds of metals, gold, silver and palladium, and has the same effect as a pure gold wire, and can greatly reduce the cost.
以下、本発明の実施形態を図面に基づいて説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図1および図2を参照する。図1は、本発明の一実施形態による合金線の製造方法を示す流れ図である。図2は、図1の細部を示す流れ図である。図1および図2に示すように、本発明の合金線の製造方法は、まず、工程100において、金および銀の成分を含んだ主要金属材料が提供される。
Please refer to FIG. 1 and FIG. FIG. 1 is a flowchart showing a method of manufacturing an alloy wire according to an embodiment of the present invention. FIG. 2 is a flowchart showing details of FIG. As shown in FIG. 1 and FIG. 2, in the method of manufacturing an alloy wire of the present invention, first, in
工程102において、溶解精錬が行われる。金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ(工程102a)、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入され、溶解される(工程102b)。これにより、真空溶炉が金銀パラジウム合金溶解液を作り出す(工程102c)。金銀パラジウム合金溶解液は、金が8.00〜30.00重量%、銀が66.00〜90.00重量%、パラジウムが0.01〜6.00重量%含まれる。
In
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4〜8 mmの金銀パラジウム合金線材が形成される(工程102d)。リールにより金銀パラジウム合金線材が巻き取られる(工程102e)。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる(工程102f)。
A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 to 8 mm (
工程104において、鋳造された金銀パラジウム合金線材が引き伸ばされる。線径が4〜8 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる(工程104a)。引き続き、第2の太線伸線機により1mm以下に引き伸ばされる(工程104b)。第1の細線伸線機により0.18 mm以下に引き伸ばされる(工程104c)。0.18 mm以下の金銀パラジウム合金線材が第2の細線伸線機(工程104d)、極細線伸線機(工程104e)および超極細線伸線機(工程104f)に順番に引き伸ばされて0.050 mm (2.00mil)〜0.010 mm (0.40mil)の金銀パラジウム合金線となる。
In
工程106において、金銀パラジウム合金線の表面が洗浄される。
In
工程108において、金銀パラジウム合金線に対して、乾燥およびアニール処理が行われることにより、金銀パラジウム合金線の破断強度(Breaking Load)、伸度(Elongation) など物理的特性が所定範囲内に限定されるようにする。
In
本発金銀パラジウム合金線は、IC、LEDおよびSAWのパッケージにおいて、導線として用いられる This gold-silver-palladium alloy wire is used as a conductor in IC, LED and SAW packages.
以下、本発明の三つの実施形態を詳細に説明する。 Hereinafter, three embodiments of the present invention will be described in detail.
第1の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が30.00重量%、銀が66.00重量%、パラジウムが4.00重量%含まれる。
First Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 30.00% by weight of gold, 66.00% by weight of silver, and 4.00% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 4 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が4 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 4 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is drawn in turn by a second fine wire drawing machine, a super fine wire drawing machine, and a super fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
第2の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が8.00重量%、銀が86.00重量%、パラジウムが6.00重量%含まれる。
Second Embodiment When a main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace, a vacuum is formed. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 8.00% by weight of gold, 86.00% by weight of silver, and 6.00% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が6mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 6 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が6 mmの金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 6 mm is drawn to 3 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is successively drawn by a second fine wire drawing machine, an extra fine wire drawing machine, and an extra fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
第3の実施形態
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が9.99重量%、銀が90.00重量%、パラジウムが0.01重量%含まれる。
Third Embodiment A main metal material containing gold and silver components is put in a vacuum furnace, and then a secondary raw metal material containing palladium is mixed in the vacuum furnace. The furnace stirs and melts to produce a gold-silver-palladium alloy solution. The gold-silver-palladium alloy solution contains 9.99% by weight of gold, 90.00% by weight of silver, and 0.01% by weight of palladium.
金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が8mmの金銀パラジウム合金線材が形成される。リールにより金銀パラジウム合金線材が巻き取られる。成分比率が正しいか、金銀パラジウム合金線材の成分分析が行われる。 A gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire having a wire diameter of 8 mm. A gold-silver-palladium alloy wire is wound up by the reel. The component analysis of the gold-silver-palladium alloy wire is performed to check whether the component ratio is correct.
鋳造された金銀パラジウム合金線材が形成されると、引き伸ばしが行われる。線径が8 mmの金銀パラジウム合金線材が第1の太線伸線機により2mm以下に引き伸ばされる。引き続き、第2の太線伸線機により1mmに引き伸ばされる。第1の細線伸線機により0.18 mmに引き伸ばされる。0.18 mmの金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050 mm〜0.010 mmの金銀パラジウム合金線となる。 When the cast gold-silver-palladium alloy wire is formed, stretching is performed. A gold-silver-palladium alloy wire having a wire diameter of 8 mm is drawn to 2 mm or less by the first thick wire drawing machine. Subsequently, it is drawn to 1 mm by the second thick wire drawing machine. It is drawn to 0.18 mm by the first fine wire drawing machine. A 0.18 mm gold-silver-palladium alloy wire is successively drawn by a second fine wire drawing machine, an extra fine wire drawing machine, and an extra fine wire drawing machine to form a 0.0550 mm-0.010 mm gold-silver-palladium alloy wire.
金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われる。 When the surface of the gold-silver-palladium alloy wire is cleaned, drying and annealing are performed.
金、銀およびパラジウムの三種の金属を用いて調合した合金線は、純金金線の効果を有し、大幅にコストを削減することができる。 An alloy wire prepared by using three kinds of metals, gold, silver and palladium, has the effect of a pure gold wire, and can greatly reduce the cost.
本発明では好適な実施形態を前述の通りに開示したが、これらは決して本発明を限定するものではなく、当該技術を熟知する者は誰でも、本発明の精神と領域を脱しない範囲内で各種の変更や修正を加えることができる。従って、本発明の保護の範囲は、特許請求の範囲で指定した内容を基準とする。 Although preferred embodiments of the present invention have been disclosed as described above, they are not intended to limit the present invention in any way, and anyone skilled in the art is within the spirit and scope of the present invention. Various changes and modifications can be made. Therefore, the scope of protection of the present invention is based on the contents specified in the claims.
工程100 主要金属材料が提供される
工程102 溶解精錬が行われる
工程104 引き伸しが行われる
工程106 表面が洗浄される
工程108 アニール処理が行われる
工程102a 真空溶炉内に入れられる
工程102b 攪拌および溶解が行われる
工程102c 金銀パラジウム合金溶解液が作り出される
工程102d 金銀パラジウム合金線材が形成される
工程102e 金銀パラジウム合金線材が巻き取られる
工程102f 成分分析が行われる
工程104a 第1の太線伸線機により引き伸ばしが行われる
工程104b 第2の太線伸線機により引き伸ばしが行われる
工程104c 第1の細線伸線機により引き伸ばしが行われる
工程104d 第2の細線伸線機により引き伸ばしが行われる
工程104e 極細線伸線機により引き伸ばしが行われる
工程104f 超極細線伸線機により引き伸ばしが行われる
Step 100 Main metal material provided
Claims (8)
前記主要金属材料が真空溶炉内に入れられ、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、金銀パラジウム合金溶解液が作り出されるb工程と、
前記金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて金銀パラジウム合金線材が形成されるc工程と、
前記金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工されるd工程と、を含むことを特徴とする合金線の製造方法。 A step in which a main metallic material containing gold and silver components is provided
B step in which a gold-silver-palladium alloy solution is created when the main metal material is placed in a vacuum furnace and a secondary raw metal material containing palladium is mixed into the vacuum furnace.
C step in which the gold-silver-palladium alloy solution is continuously cast and stretched to form a gold-silver-palladium alloy wire;
A d-process in which the gold-silver-palladium alloy wire is stretched and processed into a gold-silver-palladium alloy wire having a predetermined wire diameter.
66.00〜90.00重量%の銀と、
0.01〜6.00重量%のパラジウムと、を含むことを特徴とする合金線。 8.00-30.00% by weight gold,
66.00-90.00% by weight silver,
An alloy wire comprising 0.01 to 6.00% by weight of palladium.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012108082A1 (en) | 2011-02-10 | 2012-08-16 | 田中電子工業株式会社 | Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE |
JP2013021280A (en) * | 2011-07-11 | 2013-01-31 | Profound Material Technology Co Ltd | Composite silver wire |
JP5165810B1 (en) * | 2012-09-12 | 2013-03-21 | 田中電子工業株式会社 | Silver gold palladium alloy bump wire |
JP5399581B1 (en) * | 2013-05-14 | 2014-01-29 | 田中電子工業株式会社 | High speed signal bonding wire |
JP2016092419A (en) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | Light-emitting device |
Families Citing this family (3)
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---|---|---|---|---|
US8940403B2 (en) * | 2012-01-02 | 2015-01-27 | Wire Technology Co., Ltd. | Alloy wire and methods for manufacturing the same |
KR20160030777A (en) * | 2014-09-11 | 2016-03-21 | 엠케이전자 주식회사 | Silver alloy bonding wire and manufacturing method thereof |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10130882A (en) * | 1996-10-24 | 1998-05-19 | Tokyo Tungsten Co Ltd | Composite metallic wire for electronic wire and its production |
JPH1167812A (en) * | 1997-08-20 | 1999-03-09 | Nippon Steel Corp | Gold and silver alloy thin wire for semiconductor device |
JPH11126788A (en) * | 1997-10-23 | 1999-05-11 | Tanaka Electron Ind Co Ltd | Ic-chip connecting gold alloy wire |
JPH11288962A (en) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JP2000150562A (en) * | 1998-11-09 | 2000-05-30 | Mitsubishi Materials Corp | Bonding gold alloy fine wire for semiconductor device |
JP2008218994A (en) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | Gold wire for connecting semiconductor element |
-
2009
- 2009-01-23 TW TW98102770A patent/TW201028227A/en unknown
- 2009-10-07 JP JP2009233478A patent/JP5541440B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10130882A (en) * | 1996-10-24 | 1998-05-19 | Tokyo Tungsten Co Ltd | Composite metallic wire for electronic wire and its production |
JPH1167812A (en) * | 1997-08-20 | 1999-03-09 | Nippon Steel Corp | Gold and silver alloy thin wire for semiconductor device |
JPH11126788A (en) * | 1997-10-23 | 1999-05-11 | Tanaka Electron Ind Co Ltd | Ic-chip connecting gold alloy wire |
JPH11288962A (en) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JP2000150562A (en) * | 1998-11-09 | 2000-05-30 | Mitsubishi Materials Corp | Bonding gold alloy fine wire for semiconductor device |
JP2008218994A (en) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | Gold wire for connecting semiconductor element |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012108082A1 (en) | 2011-02-10 | 2012-08-16 | 田中電子工業株式会社 | Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE |
US9103001B2 (en) | 2011-02-10 | 2015-08-11 | Tanaka Denshi Kogyo K.K. | Ag—Au—Pd ternary alloy bonding wire |
JP2013021280A (en) * | 2011-07-11 | 2013-01-31 | Profound Material Technology Co Ltd | Composite silver wire |
JP5165810B1 (en) * | 2012-09-12 | 2013-03-21 | 田中電子工業株式会社 | Silver gold palladium alloy bump wire |
JP5399581B1 (en) * | 2013-05-14 | 2014-01-29 | 田中電子工業株式会社 | High speed signal bonding wire |
JP2016092419A (en) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | Light-emitting device |
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