JP2000150562A - Bonding gold alloy fine wire for semiconductor device - Google Patents

Bonding gold alloy fine wire for semiconductor device

Info

Publication number
JP2000150562A
JP2000150562A JP10317514A JP31751498A JP2000150562A JP 2000150562 A JP2000150562 A JP 2000150562A JP 10317514 A JP10317514 A JP 10317514A JP 31751498 A JP31751498 A JP 31751498A JP 2000150562 A JP2000150562 A JP 2000150562A
Authority
JP
Japan
Prior art keywords
ball
bonding
gold alloy
semiconductor device
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10317514A
Other languages
Japanese (ja)
Other versions
JP3329286B2 (en
Inventor
Yuichi Miyahara
勇一 宮原
Toshimasa Oomura
豪政 大村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP31751498A priority Critical patent/JP3329286B2/en
Publication of JP2000150562A publication Critical patent/JP2000150562A/en
Application granted granted Critical
Publication of JP3329286B2 publication Critical patent/JP3329286B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide the gold alloy fine wire to be used as a bonding wire for a semiconductor device. SOLUTION: This is the gold alloy fine wire for bonding of (1) a gold alloy semiconductor device containing Ag of 1 to 50 wt.%, Pd of 0.8 to 5 wt.%, Ti of 0.1 to 2 wt.% and the remaining part consisting of Au and inevitable impurities, and (2) a semiconductor device bonding gold alloy fine wire containing Ag of 1 to 50 wt.%, Pd of 0.8 to 5 wt.%, Ti of 0.1 to 2 wt.%, the material containing one or two or more kinds selected from Ca, Be and La of 1 to 50 wt.% and the remaining part consisting of a gold alloy of Au and inevitable impurities.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は、半導体装置のボ
ンディングワイヤーとして使用する金合金細線に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold alloy thin wire used as a bonding wire of a semiconductor device.

【０００２】[0002]

【従来の技術】ボンディングワイヤーを使用して半導体
装置のチップとボンディングワイヤーを接続するには、
図１に示されるように、チップ４の周辺部に真空蒸着ま
たはスパッタリングによりＡｌ電極パッド５を形成した
チップ４をボンディング装置に設置し、一方、ボンディ
ングワイヤー２を通したキャピラリー１を前記チップ４
のＡｌ電極パッド５の真上に移動させる。そこでボンデ
ィングワイヤー２の先端を放電により溶融して溶融ボー
ル（図示せず）を形成し、この溶融ボールはただちに放
冷されて凝固し、ボール３が形成される。このボール３
は超音波振動を付与したキャピラリー１によりＡｌ電極
パッド５に押しつけられ、超音波併用熱圧着されて図２
に示されるような圧着ボール３１が形成される。2. Description of the Related Art In order to connect a chip of a semiconductor device and a bonding wire using the bonding wire,
As shown in FIG. 1, a chip 4 having an Al electrode pad 5 formed on the periphery of the chip 4 by vacuum evaporation or sputtering is installed in a bonding apparatus, while the capillary 1 through which a bonding wire 2 is passed is connected to the chip 4.
Above the Al electrode pad 5. Then, the tip of the bonding wire 2 is melted by electric discharge to form a molten ball (not shown). The molten ball is immediately cooled and solidified to form the ball 3. This ball 3
2 is pressed against the Al electrode pad 5 by the capillary 1 to which ultrasonic vibration is applied, and thermocompression-bonded with ultrasonic wave.
Is formed as shown in FIG.

【０００３】超音波併用熱圧着により形成された圧着ボ
ール３１とＡｌ電極パッド５との接合部分にはＡｌ電極
パッド５のＡｌが圧着ボール３１に拡散して、圧着ボー
ルの拡大図である図３に示されるようになＡｕ4 Ａｌ、
Ａｕ5 Ａｌ3 などのＡｕとＡｌの金属間化合物層６が形
成される。このＡｕとＡｌの金属間化合物層６が成長し
てその厚さを増すと、圧着ボールの拡大側面図である図
４に示されるように、カーケンダル効果によりＡｌ電極
パッド５の近くの圧着ボール３１内部にボイド８が発生
し、このボイド８の発生はＡｌ電極パッド５に対する圧
着ボール３１の接合強度を著しく低下させる。さらに、
ＡｕとＡｌの金属間化合物層６が成長して大きくなる
と、ＡｕとＡｌの金属間化合物層部分は封止樹脂と反応
して腐食が起こりやすいために半導体装置の腐食に対す
る信頼性も低下する。The Al of the Al electrode pad 5 diffuses into the crimped ball 31 at the joint between the crimped ball 31 and the Al electrode pad 5 formed by thermocompression combined with ultrasonic waves, and is an enlarged view of the crimped ball FIG. Au 4 Al, as shown in
An intermetallic compound layer 6 of Au and Al such as Au 5 Al 3 is formed. As the intermetallic compound layer 6 of Au and Al grows and its thickness increases, as shown in FIG. 4 which is an enlarged side view of the press-bonded ball, the press-bonded ball 31 near the Al electrode pad 5 due to the Kirkendal effect. Voids 8 are generated inside, and the generation of the voids 8 significantly reduces the bonding strength of the press-bonded ball 31 to the Al electrode pad 5. further,
If the intermetallic compound layer 6 of Au and Al grows and becomes large, the portion of the intermetallic compound layer of Au and Al reacts with the sealing resin and is likely to be corroded, so that the reliability of the semiconductor device against corrosion is reduced.

【０００４】Ａｇを含有した金合金細線においてもＡｕ
とＡｌの金属間化合物層６が生成することが分かってお
り、ＡｕとＡｌの金属間化合物層６の成長を抑制するに
はＰｄの添加が有効であるといわれているところから、
Ａｇを含有した金合金にＰｄを添加したボンディングワ
イヤーが提案されており、このＡｇを含有した金合金に
Ｐｄを添加したボンディングワイヤーから得られた圧着
ボール３１の内部には、圧着ボールの拡大側面図である
図５に示されるようなＰｄリッチ層７が形成され、この
Ｐｄリッチ層７がＡｕとＡｌの金属間化合物層６の成長
抑制に寄与しているといわれている。[0004] Even in gold alloy thin wires containing Ag, Au
It is known that an intermetallic compound layer 6 of Al and Al is generated, and it is said that the addition of Pd is effective in suppressing the growth of the intermetallic compound layer 6 of Au and Al.
A bonding wire in which Pd is added to a gold alloy containing Ag has been proposed, and a crimped ball 31 obtained from a bonding wire in which Pd has been added to a gold alloy containing Ag has an enlarged side surface of the crimped ball. A Pd-rich layer 7 as shown in FIG. 5 is formed, and this Pd-rich layer 7 is said to contribute to the growth suppression of the intermetallic compound layer 6 of Au and Al.

【０００５】Ａｇを含有した金合金にＰｄを添加したボ
ンディングワイヤーの一つとして、Ａｇ：１０〜６０ｗ
ｔ％、Ｍｎ：０．００５〜０．８ｗｔ％、Ｐｄ：０．０
０５〜５ｗｔ％を含有し、残部Ａｕおよび不可避不純物
からなる組成の金合金細線が知られており（特開平７−
３３５６８４号公報参照）、ここでＭｎの添加は加熱後
の接合強度の低下を抑制するものであるとしている。As one of the bonding wires obtained by adding Pd to a gold alloy containing Ag, Ag: 10 to 60 watts is used.
t%, Mn: 0.005 to 0.8 wt%, Pd: 0.0
There is known a gold alloy fine wire containing 0.5 to 5 wt% and having a balance of Au and unavoidable impurities (Japanese Patent Application Laid-Open No. 7-1995).
Here, it is described that the addition of Mn suppresses a decrease in bonding strength after heating.

【０００６】[0006]

【発明が解決しようとする課題】しかし、前記従来のＡ
ｇ：１０〜６０ｗｔ％、Ｍｎ：０．００５〜０．８ｗｔ
％、Ｐｄ：０．００５〜５ｗｔ％を含有した金合金から
なるボンディングワイヤーは、ボンディングワイヤーの
先端を加熱してボールを形成すると、結晶粒径の大きな
ボールが得られ、この結晶粒径の大きなボールを超音波
併用熱圧着すると、圧着ボールの形状が変形し、圧着ボ
ール３１の上から見た形状（拡大側面図である図５のＡ
−Ａ方向から見た形状）が、図６に示されるように円が
偏平化して楕円形圧着ボール３２になりやすい。However, the conventional A
g: 10-60 wt%, Mn: 0.005-0.8 wt
%, Pd: a bonding wire made of a gold alloy containing 0.005 to 5 wt%, when the tip of the bonding wire is heated to form a ball, a ball having a large crystal grain size is obtained. When the ball is thermocompression-bonded with ultrasonic waves, the shape of the crimped ball is deformed, and the shape of the crimped ball 31 as viewed from above (A in FIG.
As shown in FIG. 6, the shape of the circle tends to be flattened into the elliptical crimped ball 32.

【０００７】また、Ｐｄを多く添加したボンディングワ
イヤーを使用して圧着ボール３１を形成するには、通常
よりも高出力で超音波併用熱圧着を行う必要があり、超
音波併用熱圧着を高出力で行うほど圧着ボールの形状が
変形して偏平化した楕円形圧着ボールになりやすい。圧
着ボール３１は上から見た（すなわち、図５のＡ−Ａ方
向から見た）形状が図６の点線で示されるように真円に
ならないと、ワイヤ相互間の距離が益々狭くなるような
ボンディングが求められいる現状では、隣接する圧着ボ
ール３１がショートする恐れがあり、十分に信頼性のあ
るボンディングが得られない。Further, in order to form the press-bonded ball 31 using a bonding wire containing a large amount of Pd, it is necessary to carry out thermocompression combined with ultrasonic waves at a higher output than usual. The more the step is performed, the more easily the crimped ball is deformed and becomes a flattened elliptical crimped ball. If the shape of the press-bonded ball 31 is not a perfect circle as viewed from above (that is, as viewed from the AA direction in FIG. 5) as shown by the dotted line in FIG. 6, the distance between the wires becomes smaller. Under the current situation where bonding is required, there is a possibility that the adjacent pressure-bonded balls 31 may be short-circuited, and thus sufficiently reliable bonding cannot be obtained.

【０００８】[0008]

【課題を解決するための手段】そこで、本発明者らは、
ボンディング時に形成されるボールの結晶粒が微細であ
り、ＡｕとＡｌの金属間化合物層の形成を抑制して封止
樹脂との反応による腐食を抑制し、さらに圧着ボールの
偏平化を抑制した従来よりも信頼性のあるボンディング
用金合金細線を得るべく研究を行った結果、（ａ）Ａ
ｇ：１〜５０ｗｔ．％、Ｐｄ：０．８〜５ｗｔ．％を含
有する組成を有する金合金に、Ｔｉを０．１〜２ｗｔ．
ｐｐｍ添加すると、キャピラリーに挿入された金合金細
線の先端に形成されるボールの結晶粒径が一層微細化
し、この結晶粒径が微細なボールを超音波併用熱圧着し
て得られた圧着ボールの上から見た形状は真円に近くな
り、さらに、圧着ボールに形成されるＡｕとＡｌの金属
間化合物層の成長を抑えることができる、（ｂ）前記
（ａ）のボンディング用金合金細線に、さらにＣａ、Ｂ
ｅ、Ｌａの内の一種または二種以上：１〜５０ｗｔ．ｐ
ｐｍを含有せしめると、高温強度が一層向上する、とい
う知見を得たのである。Means for Solving the Problems Accordingly, the present inventors have:
Conventionally, the crystal grains of the ball formed during bonding are fine, the formation of an intermetallic compound layer of Au and Al is suppressed, the corrosion due to the reaction with the sealing resin is suppressed, and the flattening of the press-bonded ball is further suppressed. As a result of conducting research to obtain a gold alloy thin wire for bonding that is more reliable, (a) A
g: 1 to 50 wt. %, Pd: 0.8 to 5 wt. % To a gold alloy having a composition containing 0.1 to 2 wt.
When ppm is added, the crystal grain size of the ball formed at the tip of the gold alloy fine wire inserted into the capillary is further refined, and the crimped ball obtained by thermocompression-bonding a ball having a fine crystal grain size together with ultrasonic waves is obtained. The shape seen from above is close to a perfect circle, and furthermore, the growth of the intermetallic compound layer of Au and Al formed on the pressure-bonded ball can be suppressed. , And Ca, B
e, one or more of La: 1 to 50 wt. p
It was found that when pm was included, the high-temperature strength was further improved.

【０００９】この発明は、かかる知見にもとづいてなさ
れたものであって、 （１）Ａｇ：１〜５０ｗｔ．％、Ｐｄ：０．８〜５ｗ
ｔ．％、Ｔｉ：０．１〜２ｗｔ．ｐｐｍを含有し、残り
がＡｕおよび不可避不純物からなる組成を有する金合金
からなる半導体装置のボンディング用金合金細線。 （２）Ａｇ：１〜５０ｗｔ．％、Ｐｄ：０．８〜５ｗ
ｔ．％、Ｔｉ：０．１〜２ｗｔ．ｐｐｍを含有し、さら
に、Ｃａ、Ｂｅ、Ｌａの内の一種または二種以上：１〜
５０ｗｔ．ｐｐｍを含有し、残りがＡｕおよび不可避不
純物からなる組成を有する金合金からなる半導体装置の
ボンディング用金合金細線、に特徴を有するものであ
る。The present invention has been made based on such findings, and (1) Ag: 1 to 50 wt. %, Pd: 0.8-5 w
t. %, Ti: 0.1 to 2 wt. A gold alloy fine wire for bonding a semiconductor device comprising a gold alloy containing ppm and the balance being Au and unavoidable impurities. (2) Ag: 1 to 50 wt. %, Pd: 0.8-5 w
t. %, Ti: 0.1 to 2 wt. ppm, and one or more of Ca, Be, and La:
50 wt. ppm, and the balance is a gold alloy thin wire for a semiconductor device made of a gold alloy having a composition consisting of Au and unavoidable impurities.

【００１０】この発明の半導体装置のボンディング用金
合金細線に含有する成分組成を前記のごとく限定したの
は下記の理由によるものである。 （ａ）Ａｇ Ａｇの添加は常温および高温強度を向上させると共に、
金の使用量を減少させて価格を安くするするために添加
されるが、５０ｗｔ．％を越えて添加すると、生成する
金属間化合物相が変化し、接合強度の信頼性が低下する
ので好ましくなく、一方、１ｗｔ．％未満では常温およ
び高温強度を向上させるには不十分である。したがっ
て、Ａｇの含有量は１〜５０ｗｔ．％に定めた。Ａｇの
含有量の一層好ましい範囲は５〜３５ｗｔ．％である。The composition of components contained in the bonding gold alloy thin wire of the semiconductor device of the present invention is limited as described above for the following reasons. (A) Ag The addition of Ag improves room temperature and high temperature strength,
It is added to reduce the amount of gold used and to lower the price, but 50 wt. %, It is not preferable because the intermetallic compound phase to be formed changes and the reliability of the bonding strength decreases. % Is insufficient to improve the strength at ordinary temperature and high temperature. Therefore, the content of Ag is 1 to 50 wt. %. A more preferable range of the Ag content is 5 to 35 wt. %.

【００１１】（ｂ）Ｐｄ 金合金細線に含まれるＰｄの含有量が０．８ｗｔ．％未
満ではＡｕとＡｌの金属間化合物層の成長を抑制する効
果が十分でなく、一方、金合金細線に含まれるＰｄの含
有量が５ｗｔ．％を越えると、得られるボールの硬さが
大きくなり過ぎて超音波併用熱圧着時にチップに割れや
欠けを生じさせるので好ましくない。したがってＰｄの
含有量を０．８〜５ｗｔ．％に定めた。Ｐｄの含有量の
一層好ましい範囲は０．９〜３．０ｗｔ．％である。(B) Pd The content of Pd contained in the fine gold alloy wire is 0.8 wt. %, The effect of suppressing the growth of the intermetallic compound layer of Au and Al is not sufficient, while the content of Pd contained in the fine gold alloy wire is 5 wt. %, It is not preferable because the hardness of the obtained ball becomes too large and cracks or chips are generated in the chip at the time of thermocompression combined with ultrasonic waves. Therefore, when the content of Pd is 0.8 to 5 wt. %. A more preferable range of the content of Pd is 0.9 to 3.0 wt. %.

【００１２】（ｃ）Ｔｉ Ｔｉは、ボンディング時に形成されるボールの結晶粒径
の微細化および真球性を向上させる成分であるが、それ
らの含有量が０．１ｗｔ．ｐｐｍ未満では、金合金細線
のボンディング時に生成するボールの結晶粒径の微細化
および真球性を得ることができず、したがって得られる
圧着ボールの上から見た真円性向上効果が得られない。
一方、Ｔｉを２ｗｔ．ｐｐｍを越えて含有させると、ボ
ール拡大側面図である図７に示されるように、ボールの
最下中心部に引け巣９が生じ、圧着ボールの接合性が劣
化するようになるので好ましくない。したがってＴｉの
含有量を０．１〜２ｗｔ．ｐｐｍに定めた。Ｔｉ成分の
含有量の一層好ましい範囲は０．８〜１．８ｗｔ．ｐｐ
ｍである。(C) Ti Ti is a component that improves the crystal grain size and the sphericity of a ball formed at the time of bonding. If it is less than ppm, it is not possible to obtain finer crystal grain size and sphericity of the ball generated at the time of bonding the gold alloy fine wire, and therefore, it is not possible to obtain the effect of improving the roundness as viewed from above the obtained pressure-bonded ball. .
On the other hand, 2 wt. If the content exceeds ppm, as shown in FIG. 7 which is an enlarged side view of the ball, a shrinkage cavity 9 is formed in the lowermost center portion of the ball, and the bonding property of the press-bonded ball is undesirably deteriorated. Therefore, when the content of Ti is 0.1 to 2 wt. ppm. A more preferable range of the content of the Ti component is 0.8 to 1.8 wt. pp
m.

【００１３】（ｃ）Ｃａ、Ｂｅ、Ｌａ これら成分は金合金細線の高温強度および加工硬化性を
付与し、ボンディング時に形成されるループの安定性を
向上させる成分であるので、必要に応じて添加するが、
その含有量が１ｗｔ．ｐｐｍ未満では所望の効果が得ら
れず、一方、５０ｗｔ．ｐｐｍを越えて含有させると、
真円状の圧着ボールが得られなくなるので好ましくな
い。したがってＣａ、Ｂｅ、Ｌａの内の１種または２種
以上の含有量を１〜５０ｗｔ．ｐｐｍに定めた。これら
成分の含有量の一層好ましい範囲は１０〜３０ｗｔ．ｐ
ｐｍである。(C) Ca, Be, La These components are components that impart high-temperature strength and work hardening properties of the gold alloy fine wire and improve the stability of the loop formed during bonding. But
When its content is 1 wt. If it is less than ppm, the desired effect cannot be obtained, while 50 wt. If the content exceeds ppm,
It is not preferable because a completely circular pressure-bonded ball cannot be obtained. Therefore, the content of one or more of Ca, Be, and La is set to 1 to 50 wt. ppm. A more preferred range for the content of these components is 10 to 30 wt. p
pm.

【００１４】[0014]

【発明の実施の形態】通常の真空溶解炉により表１〜表
３に示される成分組成に調整されたＡｕ合金を溶解し、
得られたＡｕ合金溶湯を鋳造し、直径：５５ｍｍ、長
さ：１５０ｍｍのビレットを作製した。これらのビレッ
トを溝ロール、単頭伸線機により直径：８ｍｍに減面
し、その後、連続伸線機により直径：２５μｍの極細線
とした。さらに最終処理として、管状炉において、温度
およびスピードを調整の上、引張り破断試験機で伸びが
４％となるような焼鈍を行ない、本発明Ａｕ合金細線１
〜３２、比較Ａｕ合金細線１〜４および従来Ａｕ合金細
線を作製した。BEST MODE FOR CARRYING OUT THE INVENTION An Au alloy adjusted to the composition shown in Tables 1 to 3 is melted by a normal vacuum melting furnace.
The obtained molten Au alloy was cast to produce a billet having a diameter of 55 mm and a length of 150 mm. These billets were reduced to a diameter of 8 mm by a groove roll and a single-head drawing machine, and then formed into a fine wire having a diameter of 25 μm by a continuous drawing machine. Further, as a final treatment, in a tubular furnace, after adjusting the temperature and speed, annealing was performed by a tensile breaking tester so that the elongation was 4%.
To 32, comparative Au alloy fine wires 1 to 4 and a conventional Au alloy fine wire.

【００１５】ついで、本発明Ａｕ合金細線１〜３２、比
較Ａｕ合金細線１〜４および従来Ａｕ合金細線につい
て、それぞれ下記に示す試験を行い、各種特性の評価を
行い、その結果を表１〜表３に示した。The Au alloy fine wires 1 to 32 of the present invention, the comparative Au alloy fine wires 1 to 4 and the conventional Au alloy fine wires were each subjected to the following tests to evaluate various characteristics. 3 is shown.

【００１６】ボールの結晶粒の測定および引け巣の有無 本発明Ａｕ合金細線１〜３２、比較Ａｕ合金細線１〜４
および従来Ａｕ合金細線の一端をアークにより加熱し放
冷してボールを形成し、このボールの中央部を通る線に
沿って切断し、ボールの平均結晶粒径および引け巣の有
無を測定し、その結果を求めた。Measurement of ball crystal grains and presence or absence of shrinkage cavities Au alloy fine wires 1 to 32 of the present invention, comparative Au alloy fine wires 1 to 4
And one end of the conventional Au alloy fine wire is heated by an arc and allowed to cool to form a ball, cut along a line passing through the center of the ball, and the average crystal grain size of the ball and the presence or absence of shrinkage cavities are measured. The result was determined.

【００１７】圧着ボールの真円性試験 本発明Ａｕ合金細線１〜３２、比較Ａｕ合金細線１〜４
および従来Ａｕ合金細線の一端をアークにより加熱し放
冷してボールを形成し、大気中でボールアップし、２０
０℃でＳｉ基板のＡｌ電極パッド上の第１接合点にボン
ディングして圧着ボールを形成し、圧着ボールを図５の
Ａ−Ａ方向から見た図６の長径：ｙおよび短径：ｘの長
さを測定し、ｘ−ｙの値を求めて圧着ボールの真円性を
評価した。Roundness test of crimped balls Au alloy fine wires 1 to 32 of the present invention, comparative Au alloy fine wires 1 to 4
Also, one end of a conventional Au alloy thin wire is heated by an arc and allowed to cool to form a ball.
At 0 ° C., bonding is performed to the first bonding point on the Al electrode pad of the Si substrate to form a press-bonded ball, and the press-bonded ball has a major axis: y and a minor axis: x in FIG. The length was measured, and the value of xy was determined to evaluate the roundness of the press-bonded ball.

【００１８】接合信頼性試験 本発明Ａｕ合金細線１〜３２、比較Ａｕ合金細線１〜４
および従来Ａｕ合金細線でＳｉ基板のＡｌ電極パッドと
リードを接続し、その後、樹脂封止を行った試料を２０
０℃で２０００時間保持したものについて、４端子法で
電気抵抗を測定し、接触抵抗を含めた抵抗値が１Ω以上
の個所が存在すると不良と判定し、接合不良部の有無を
評価した。Bonding reliability test Au alloy thin wires 1 to 32 of the present invention, comparative Au alloy thin wires 1 to 4
Also, the Al electrode pad of the Si substrate was connected to the lead with a conventional Au alloy thin wire, and then the resin-sealed sample was used for 20
Electric resistance was measured by a four-terminal method for the sample held at 0 ° C. for 2,000 hours, and when there was a portion where the resistance value including contact resistance was 1 Ω or more, it was determined to be defective, and the presence or absence of a defective bonding portion was evaluated.

【００１９】[0019]

【表１】 [Table 1]

【００２０】[0020]

【表２】 [Table 2]

【００２１】[0021]

【表３】 [Table 3]

【００２２】[0022]

【発明の効果】表１〜表３に示された結果から、本発明
Ａｕ合金細線１〜３２は従来Ａｕ合金細線に比べて、ボ
ールの平均結晶粒径が小さくまた引け巣の発生がなく、
さらに、このボールを超音波併用熱圧着して得られた圧
着ボールのｘ−ｙの絶対値が０に近いところから、図５
のＡ−Ａ方向から見た圧着ボールの真円性にも優れてい
ることが分かる。また、この発明の条件から外れた比較
Ａｕ合金細線１〜４には少なくとも一つの好ましくない
特性が現れることが分かる。上述のように、この発明の
金合金細線は、従来よりも信頼性のあるボンディングを
行うことができ、半導体装置産業の発展に大いに貢献し
得るものである。From the results shown in Tables 1 to 3, the Au alloy fine wires 1 to 32 of the present invention have a smaller average crystal grain size of the ball and have no shrinkage cavities compared to the conventional Au alloy fine wires.
Further, since the absolute value of xy of the pressure-bonded ball obtained by thermocompression-bonding this ball together with ultrasonic waves is close to 0, FIG.
It can be seen that the roundness of the press-bonded ball as viewed from the AA direction is also excellent. Further, it can be seen that at least one unfavorable characteristic appears in the comparative Au alloy fine wires 1 to 4 which deviate from the conditions of the present invention. As described above, the gold alloy thin wire of the present invention can perform more reliable bonding than before, and can greatly contribute to the development of the semiconductor device industry.

【図面の簡単な説明】[Brief description of the drawings]

【図１】半導体装置のワイヤーボンディングに際してボ
ールを形成した状態を示す説明図である。FIG. 1 is an explanatory diagram showing a state in which a ball is formed during wire bonding of a semiconductor device.

【図２】ボールを超音波併用熱圧着して圧着ボールを形
成した状態を示す説明図である。FIG. 2 is an explanatory diagram showing a state in which a ball is formed by thermocompression bonding of a ball with ultrasonic waves to form a press-bonded ball.

【図３】圧着ボールの拡大側面図である。FIG. 3 is an enlarged side view of a pressure-bonded ball.

【図４】圧着ボールの拡大側面図である。FIG. 4 is an enlarged side view of a pressure-bonded ball.

【図５】圧着ボールの拡大側面図である。FIG. 5 is an enlarged side view of a crimped ball.

【図６】図５のＡ−Ａ方向から見た圧着ボールの拡大図
である。FIG. 6 is an enlarged view of a press-bonded ball as viewed from a direction AA in FIG. 5;

【図７】ボールの拡大図である。FIG. 7 is an enlarged view of a ball.

【符号の説明】[Explanation of symbols]

１ キャピラリー ２ ボンディングワイヤー ３ ボール ４ チップ ５ Ａｌ電極パッド ６ 金属間化合物層 ７ Ｐｄリッチ層 ８ ボイド ９ 引け巣 ３１ 圧着ボール ３２ 楕円形圧着ボール DESCRIPTION OF SYMBOLS 1 Capillary 2 Bonding wire 3 Ball 4 Chip 5 Al electrode pad 6 Intermetallic compound layer 7 Pd rich layer 8 Void 9 Shrinkage cavity 31 Crimp ball 32 Oval crimp ball

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 Ａｇ：１〜５０ｗｔ．％、 Ｐｄ：０．８〜５ｗｔ．％、 Ｔｉ：０．１〜２ｗｔ．ｐｐｍ、 を含有し、残りがＡｕおよび不可避不純物からなる組成
を有する金合金からなることを特徴とする半導体装置の
ボンディング用金合金細線。1. Ag: 1 to 50 wt. %, Pd: 0.8 to 5 wt. %, Ti: 0.1 to 2 wt. A fine gold alloy wire for bonding semiconductor devices, comprising: a gold alloy having a composition consisting of Au and unavoidable impurities. 【請求項２】 Ａｇ：１〜５０ｗｔ．％、 Ｐｄ：０．８〜５ｗｔ．％、 Ｔｉ：０．１〜２ｗｔ．ｐｐｍ、 を含有し、さらに、 Ｃａ、Ｂｅ、Ｌａの内の一種または二種以上：１〜５０
ｗｔ．ｐｐｍ、を含有し、残りがＡｕおよび不可避不純
物からなる組成を有する金合金からなることを特徴とす
る半導体装置のボンディング用金合金細線。2. Ag: 1 to 50 wt. %, Pd: 0.8 to 5 wt. %, Ti: 0.1 to 2 wt. ppm, and one or more of Ca, Be, and La: 1 to 50
wt. A fine gold alloy wire for bonding semiconductor devices, comprising: a gold alloy having a composition comprising Au and unavoidable impurities.
JP31751498A 1998-11-09 1998-11-09 Gold alloy wires for bonding semiconductor devices Expired - Fee Related JP3329286B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31751498A JP3329286B2 (en) 1998-11-09 1998-11-09 Gold alloy wires for bonding semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31751498A JP3329286B2 (en) 1998-11-09 1998-11-09 Gold alloy wires for bonding semiconductor devices

Publications (2)

Publication Number Publication Date
JP2000150562A true JP2000150562A (en) 2000-05-30
JP3329286B2 JP3329286B2 (en) 2002-09-30

Family

ID=18089093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31751498A Expired - Fee Related JP3329286B2 (en) 1998-11-09 1998-11-09 Gold alloy wires for bonding semiconductor devices

Country Status (1)

Country Link
JP (1) JP3329286B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270075A (en) * 2005-02-22 2006-10-05 Nec Electronics Corp Semiconductor device
JP2010171378A (en) * 2009-01-23 2010-08-05 Junde Li Alloy wire, and method of manufacturing the same
US8022541B2 (en) 2006-05-30 2011-09-20 Mk Electron Co., Ltd. Au-Ag based alloy wire for semiconductor package
US8044521B2 (en) 2005-02-22 2011-10-25 Renesas Electronics Corporation Semiconductor device
WO2012108082A1 (en) 2011-02-10 2012-08-16 田中電子工業株式会社 Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
EP4245871A1 (en) * 2022-03-18 2023-09-20 Nivarox-FAR S.A. Gold alloy

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270075A (en) * 2005-02-22 2006-10-05 Nec Electronics Corp Semiconductor device
US8044521B2 (en) 2005-02-22 2011-10-25 Renesas Electronics Corporation Semiconductor device
US8587133B2 (en) 2005-02-22 2013-11-19 Renesas Electronics Corporation Semiconductor device
US8022541B2 (en) 2006-05-30 2011-09-20 Mk Electron Co., Ltd. Au-Ag based alloy wire for semiconductor package
JP2010171378A (en) * 2009-01-23 2010-08-05 Junde Li Alloy wire, and method of manufacturing the same
WO2012108082A1 (en) 2011-02-10 2012-08-16 田中電子工業株式会社 Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
KR20130141337A (en) 2011-02-10 2013-12-26 타나카 덴시 코오교오 카부시키가이샤 Ag-au-pd ternary alloy bonding wire
US9103001B2 (en) 2011-02-10 2015-08-11 Tanaka Denshi Kogyo K.K. Ag—Au—Pd ternary alloy bonding wire
EP4245871A1 (en) * 2022-03-18 2023-09-20 Nivarox-FAR S.A. Gold alloy

Also Published As

Publication number Publication date
JP3329286B2 (en) 2002-09-30

Similar Documents

Publication Publication Date Title
TWI496900B (en) Copper alloy bonding wire for semiconductors
US11289442B2 (en) Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof
WO2013018238A1 (en) Ball bonding wire
JP3382918B2 (en) Gold wire for connecting semiconductor elements
JP3328135B2 (en) Gold alloy wire for bump formation and bump formation method
JP2005268771A (en) Gold bonding wire for semiconductor device and its method of connection
JP2000040710A (en) Gold alloy fine wire for bonding
JP3527356B2 (en) Semiconductor device
JP3329286B2 (en) Gold alloy wires for bonding semiconductor devices
JP2737953B2 (en) Gold alloy wire for gold bump
JP3126926B2 (en) Gold alloy fine wire for semiconductor element and semiconductor device
JP3356082B2 (en) Gold alloy wires for bonding semiconductor devices
JPH10326803A (en) Gold and silver alloy thin wire for semiconductor element
JPH1098063A (en) Gold alloy wire for wedge bonding
JP3323185B2 (en) Gold wire for connecting semiconductor elements
JPH1167811A (en) Gold and silver alloy thin wire for semiconductor device
JP6869919B2 (en) Precious metal-coated silver wire for ball bonding and its manufacturing method, and semiconductor device using precious metal-coated silver wire for ball bonding and its manufacturing method
JP2003059964A (en) Bonding wire and manufacturing method therefor
JPH11126788A (en) Ic-chip connecting gold alloy wire
JPH1167812A (en) Gold and silver alloy thin wire for semiconductor device
JPH1098062A (en) Gold alloy wire for wedge bonding
JP3235198B2 (en) Bonding wire
JP3426473B2 (en) Gold alloy wires for semiconductor devices
JP3907534B2 (en) Gold alloy wire for bonding
JPH09275119A (en) Semiconductor device

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20020618

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080719

Year of fee payment: 6

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080719

Year of fee payment: 6

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080719

Year of fee payment: 6

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080719

Year of fee payment: 6

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080719

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090719

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090719

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100719

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110719

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120719

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130719

Year of fee payment: 11

LAPS Cancellation because of no payment of annual fees