US20100239455A1 - Composite alloy bonding wire and manufacturing method thereof - Google Patents

Composite alloy bonding wire and manufacturing method thereof Download PDF

Info

Publication number
US20100239455A1
US20100239455A1 US12/408,952 US40895209A US2010239455A1 US 20100239455 A1 US20100239455 A1 US 20100239455A1 US 40895209 A US40895209 A US 40895209A US 2010239455 A1 US2010239455 A1 US 2010239455A1
Authority
US
United States
Prior art keywords
alloy
wire
diameter
bonding wire
alloy wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/408,952
Inventor
Jun-Der LEE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US12/408,952 priority Critical patent/US20100239455A1/en
Publication of US20100239455A1 publication Critical patent/US20100239455A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
    • B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
    • B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/437—Involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
    • H01L2224/43986—Methods of manufacturing wire connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

A manufacturing method for a composite alloy bonding wire and products thereof. A primary material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary material to obtain a Ag—Pd alloy solution. The obtained Ag—Pd alloy solution is drawn to obtain a Ag—Pd alloy wire. The Ag—Pd alloy wire is then drawn to obtain a Ag—Pd alloy bonding wire with a predetermined diameter.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention generally relates to a bonding wire used as a packaging wire, in particular, to a bonding wire used in semiconductor packaging process.
  • 2. Description of Related Art
  • In semiconductor device packaging processes for IC, LED, SAW, a wire bonding process is often performed to electrically connect the chip to the substrate by bonding wire, which used as a signal and electrical current transmitting medium between the chip and the substrate.
  • The primary characteristics of a bonding wire, such as breaking load, elongation, loop, melting point, and bondability with IC chips are dependent on the materials used as the bonding wire. The performance of the packaged semiconductor device is influenced by the characteristics of the bonding wire. According to different types of chip and substrate, the adapted bonding wire has different specification.
  • The conventional bonding wires are usually made of pure Au material. Pure Au bonding wire has better physical properties, such as elongation and electrical conductivity. However, pure Au bonding wire inevitably leads to high cost.
  • Therefore, the subject of the present invention is to solve the above mentioned problem to provide a low cost bonding wire with performance comparable to pure Au bonding wire.
    • SUMMARY OF THE INVENTION
  • The subject of this invention is to provide a low cost composite alloy bonding wire made of silver and Palladium, capable of having performance as good as a pure Au bonding wire.
  • In order to obtain the above mentioned subject, a manufacturing method for a composite alloy bonding wire is disclosed. A primary metal material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary metal material of Ag to obtain a Ag—Pd alloy solution. The obtained Ag—Pd alloy solution is then cast and drawn to obtain a Ag—Pd alloy wire. Finally, the obtained Ag—Pd alloy wire is then drawn to obtain a Ag—Pd alloy bonding wire with a predetermined diameter.
  • Besides, a composite alloy bonding wire made by the abovementioned manufacturing method is provided. The composite alloy bonding wire includes 90.00˜99.99 wt. % Ag and 0.01˜10.00 wt. % Pd.
  • The composite alloy bonding wire is capable of having performance as good as a pure Au bonding wire and decreasing the manufacturing cost.
    • BRIEF DESCRIPTION OF DRAWING
  • The features of the invention believed to be novel are set forth with particularity in the appended claims. The invention itself, however, may be best understood by reference to the following detailed description of the invention, which describes an exemplary embodiment of the invention, taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a flow chart for manufacturing composite alloy bonding wire of the present invention; and
  • FIG. 2 shows detailed sub-steps in the flow chart of FIG. 1.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • In cooperation with attached drawings, the technical contents and detailed description of the present invention are described thereinafter according to a preferable embodiment, being not used to limit its executing scope. Any equivalent variation and modification made according to appended claims is all covered by the claims claimed by the present invention.
  • Refer to FIG. 1 and FIG. 2, which respectively are a flow chart for manufacturing composite alloy bonding wire of the present invention and a drawing showing detailed sub-steps in the flow chart of FIG. 1. Step 100, a primary material of Ag is provided.
  • Step 102, the primary material is melted in a vacuum melting furnace (step 102 a). Specific amount of a secondary metal material of Pd is added into the vacuum melting furnace (step 102 b), and co-melted with the primary material in the vacuum melting furnace to obtain a Ag—Pd alloy solution (step 102 c). The Ag—Pd alloy solution consists of 90.00˜99.99 wt. % Ag and 0.01˜10.00 wt. % Pd.
  • Subsequently, continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain a Ag—Pd alloy wire with diameter of 4-8 mm (step 102 d). The Ag—Pd alloy wire is rewired by a reeling machine (step 102 e) and then composition analysis (102 f) is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • Step 104, a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4-8 mm is drawn by a first thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm (step 104 a). The Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm is drawn by a second thick drawing machine to obtain a Ag—Pd alloy wire with a predetermined diameter of 1 mm or smaller than 1 mm (step 104 b). The Ag—Pd alloy wire with diameter 1 mm or smaller than 1 mm is drawn by a first thin drawing machine to obtain a Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm (step 104 c). Then the Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm is sequentially drawn by the second thin drawing machine (step 104 d), a very thin drawing machine (step 104 e) and an ultra thin drawing machine (step 104 f) to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.0508 mm (2.00 mil) to 0.010 mm (0.40 mil).
  • Step 106, the surface of the Ag—Pd alloy bonding wire is cleaned.
  • Step 108, the Ag—Pd alloy bonding wire is annealed to ensure a final product with desirable physical properties of breaking load and elongation.
  • The Ag—Pd alloy bonding wire can be applied to packaging process of IC, LED and SAW.
  • The invention is more detailed described by three embodiments below:
    • EMBODIMENT 1
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain a Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 99.99 wt. % Ag and 0.001 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain a Ag—Pd alloy wire with a diameter of 4 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4 mm is drawn by a first thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 3 mm. The Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 1 mm. The Ag—Pd alloy wire with a diameter of 1 mm is drawn by a first thin drawing machine to obtain a Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
    • EMBODIMENT 2
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain a Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 95.00 wt. % Ag and 5.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain a Ag—Pd alloy wire with a diameter of 6 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 6 mm is drawn by a first thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 3 mm. The Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 1.0 mm. The Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain a Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
    • EMBODIMENT 3
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain a Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 90.00 wt. % Ag and 10.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd solution to obtain a Ag—Pd alloy wire with a diameter of 8 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 8 mm is drawn by a first thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 2 mm. The Ag—Pd alloy wire with a diameter of 2 mm is drawn by a second thick drawing machine to obtain a Ag—Pd alloy wire with a diameter of 1.0 mm. The Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain a Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
  • While the invention is described in by way of examples and in terms of preferred embodiments, it is to be understood that the invention is not limited thereto. On the contrary, the aim is to cover all modifications, alternatives and equivalents falling within the spirit and scope of the invention as defined by the appended claims.

Claims (8)

1. A manufacturing method for a composite alloy bonding wire, comprising the steps in order of:
a) providing a primary material of Ag;
b) melting the primary material in a vacuum melting furnace, adding a secondary metal material of Pd into the vacuum melting furnace and co-melting with the primary material in the vacuum melting furnace to obtain a Ag-Pd alloy solution;
c) continuously casting and drawing the Ag-Pd alloy solution to obtain a Ag-Pd alloy wire with a diameter of 4-8 mm to be rewired by a reeling machine; and
d) drawing the rewired Ag-Pd alloy wire to obtain a Ag-Pd alloy bonding wire with a predetermined diameter.
2. The manufacturing method according to claim 1, wherein the weight percent of Ag in step a) is 90.00%-99.99%.
3. (canceled)
4. The manufacturing method according to claim 1, wherein the surface of the Ag-Pd alloy bonding wire is cleaned and is annealed after step d).
5. (canceled)
6. (canceled)
7. (canceled)
8. The manufacturing method according to claim 1, wherein the step d) further includes the steps of:
d1) drawing by a first thick drawing machine to obtain a Ag-Pd alloy wire with a diameter of 3 mm or smaller than 3 mm;
d2) drawing by a second thick drawing machine to obtain a Ag-Pd alloy wire with a diameter of 1 mm or smaller than 1 mm;
d3) drawing by a first thin drawing machine to obtain a Ag-Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm;
d4) drawing by a first thin drawing machine to obtain a Ag-Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm; and
d5) drawing by a second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain a Ag-Pd alloy wire with a diameter of 0.050 mm to 0.010 mm.
US12/408,952 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof Abandoned US20100239455A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/408,952 US20100239455A1 (en) 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/408,952 US20100239455A1 (en) 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof

Publications (1)

Publication Number Publication Date
US20100239455A1 true US20100239455A1 (en) 2010-09-23

Family

ID=42737821

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/408,952 Abandoned US20100239455A1 (en) 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof

Country Status (1)

Country Link
US (1) US20100239455A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130171470A1 (en) * 2012-01-02 2013-07-04 Jun-Der LEE Alloy wire and methods for manufacturing the same
WO2014107040A1 (en) * 2013-01-04 2014-07-10 엠케이전자 주식회사 Silver alloy bonding wire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1588521A (en) * 1923-07-19 1926-06-15 Breguet Louis Spool for wire drawing
US6723281B1 (en) * 1999-07-12 2004-04-20 Sony Corporation Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials
US20080240975A1 (en) * 2007-03-30 2008-10-02 Mk Electron Co. Ltd. Ag-based alloy wire for semiconductor package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1588521A (en) * 1923-07-19 1926-06-15 Breguet Louis Spool for wire drawing
US6723281B1 (en) * 1999-07-12 2004-04-20 Sony Corporation Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials
US20080240975A1 (en) * 2007-03-30 2008-10-02 Mk Electron Co. Ltd. Ag-based alloy wire for semiconductor package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130171470A1 (en) * 2012-01-02 2013-07-04 Jun-Der LEE Alloy wire and methods for manufacturing the same
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
WO2014107040A1 (en) * 2013-01-04 2014-07-10 엠케이전자 주식회사 Silver alloy bonding wire
CN105122435A (en) * 2013-01-04 2015-12-02 Mk电子株式会社 Silver alloy bonding wire

Similar Documents

Publication Publication Date Title
US8101123B2 (en) Composite alloy bonding wire and manufacturing method thereof
US20090297391A1 (en) Manufacturing method for a silver alloy bonding wire and products thereof
TWI518706B (en) Bonding wire for semiconductor devices
KR101583865B1 (en) Alloy Bonding Wire Based on Ag-Au-Pd
CN101386930B (en) Method of preparing linking copper wire
JP5541440B2 (en) Alloy wire and manufacturing method thereof
KR101536554B1 (en) Bonding wire
WO2014178792A1 (en) Copper bond wire and method of making the same
CN111485131A (en) Gold bonding wire and preparation method thereof
EP2930746A1 (en) Copper bond wire and method of making the same
CN105463237A (en) Copper-silver alloy bonding wire and manufacturing method thereof
TW201028240A (en) Composite bonding wire manufacturing method and product thereof
TWI535865B (en) An silver alloy material and method for manufacturing the silver alloy material
US20100239455A1 (en) Composite alloy bonding wire and manufacturing method thereof
US20130164169A1 (en) Composite alloy bonding wire
US20090191088A1 (en) Manufacturing method for a composite metal bonding wire and products thereof
KR100514312B1 (en) Bonding wire for semiconductor device
JP5403702B2 (en) Copper bonding wire
JP5996853B2 (en) Ball bonding wire
JP6103806B2 (en) Ball bonding wire
US20130160902A1 (en) Manufacturing method for composite alloy bonding wire
JP6714150B2 (en) Bonding wire and semiconductor device
US9362249B2 (en) Silver—gold alloy bonding wire
US20120093681A1 (en) Composite alloy bonding wire and manufacturing method thereof
US20090191424A1 (en) Manufacturing method for a composite metal wire used as a packaging wire and products thereof

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION