US20120093681A1 - Composite alloy bonding wire and manufacturing method thereof - Google Patents

Composite alloy bonding wire and manufacturing method thereof Download PDF

Info

Publication number
US20120093681A1
US20120093681A1 US13/334,047 US201113334047A US2012093681A1 US 20120093681 A1 US20120093681 A1 US 20120093681A1 US 201113334047 A US201113334047 A US 201113334047A US 2012093681 A1 US2012093681 A1 US 2012093681A1
Authority
US
United States
Prior art keywords
alloy
wire
bonding wire
diameter
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/334,047
Inventor
Jun-Der LEE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/408,987 external-priority patent/US8101123B2/en
Application filed by Individual filed Critical Individual
Priority to US13/334,047 priority Critical patent/US20120093681A1/en
Publication of US20120093681A1 publication Critical patent/US20120093681A1/en
Priority to US13/607,116 priority patent/US20130160902A1/en
Priority to US13/627,880 priority patent/US20130164169A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C37/00—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape
    • B21C37/04—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire
    • B21C37/047—Manufacture of metal sheets, bars, wire, tubes or like semi-manufactured products, not otherwise provided for; Manufacture of tubes of special shape of bars or wire of fine wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261—Rods, electrodes, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
    • H01L2224/43986—Methods of manufacturing wire connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention generally relates to a bonding wire used as a packaging wire, in particular, to a bonding wire used in the semiconductor packaging process.
  • a wire bonding process is often performed to electrically connect the chip to the substrate by a bonding wire which is used as a signal and electrical current transmitting medium between the chip and the substrate.
  • the primary characteristics of the bonding wire such as the breaking load, elongation, loop, melting point, and bondability with IC chips depend on the materials of the bonding wire.
  • the performance of the packaged semiconductor device is influenced by the characteristics of the bonding wire. According to different types of chip and substrate, the adapted bonding wire has different specification.
  • the conventional bonding wires are usually made of pure Au material. Pure Au bonding wire has better physical properties, such as elongation and electrical conductivity. However, pure Au bonding wire inevitably leads to a high cost.
  • the subject of the present invention is to solve the above mentioned problem to provide a low cost bonding wire with performance comparable to pure Au bonding wire.
  • German patent no. DE 3122996 “Silver-palladium-magnesium aluminium alloy for internally oxidized electrical contacts, e.g. spring contacts” is related to an alloy used for electrical breaker and sliding contacts, e.g. in relays, switches and potentiometers.
  • the alloy has the composition (by wt.) of 5-30% Pd, 0.1-0.5% Mg, 0.01-0.5% Al and balance Ag, which is not suitable for making as a bonding wire used for IC, LED, SAW because of the following reasons.
  • the hardness of the wire will be larger than 150-200 kp/mm2.
  • the hardness of the bonding wire is normal 60-90 kp/mm2. That is, the wire made by the alloy of DE 3122996 may not be able to be drawn with a diameter as or less than 0.0175 mm (0.7 mil), and a soldering process may not be performed because it may cause cracking or catering to the IC or LED due to the hardness of the wire.
  • Adding Mg will increase the wear resistance and hardness of the alloy. After adding Mg, an oxidation process has to be performed to obtain MgO particles in the alloy. However, MgO will make the alloy become hard and brittle to be used as a bonding wire for IC and LED. Besides, MgO will increase the resistance of the alloy and decrease the conductivity of the alloy. That is also not good for the alloy to be as a bonding wire.
  • Adding Al will decrease the elongation of the alloy and increase the resistance of the alloy.
  • adding Al in Ag will produce various configurations of Ag and Al compound in the alloy. These are negative for the alloy to be as the bonding wire.
  • the resistance of the alloy of DE 3122996 is about 0.08-0.16 ohm, mm2/m which is 160-170 times of 0.00023-0.00050 ohm, mm2/m for a general resistance of a bonding wire.
  • the bonding wire with high resistance will reduce the transmission speed and the lifespan of the IC or LED.
  • the present invention is to provide a low cost composite alloy bonding wire made of silver (Ag) and palladium (Pd) and excluding magnesium (Mg) and aluminium (Al), capable of having performance as good as a pure Au bonding wire.
  • a manufacturing method for a composite alloy bonding wire is disclosed.
  • a primary metal material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary metal material of Ag to obtain an Ag—Pd alloy solution.
  • the obtained Ag—Pd alloy solution is then cast and drawn to obtain an Ag—Pd alloy wire.
  • the obtained Ag—Pd alloy wire is then drawn to obtain an Ag—Pd alloy bonding wire with a predetermined diameter.
  • the composite alloy bonding wire includes 90.00 ⁇ 99.99 wt. % Ag and 0.01 ⁇ 10.00 wt. % but no more than 10.00 wt. % Pd.
  • the composite alloy bonding wire made of silver and Palladium has performance as good as a pure Au bonding wire and a lower manufacturing cost.
  • FIG. 1 is a flow chart for manufacturing composite alloy bonding wire of the present invention.
  • FIG. 2 shows detailed sub-steps in the flow chart of FIG. 1 .
  • Ag should be used as a base metal because of its density, hardness, electrical conductivity, thermal conductivity and the cost.
  • the density of Ag is 10.5 g/cm3, while it is 54.4% of Au. It is light enough to meet the weight requirement of the electronic products.
  • the order is Pd, Cu, Ag and Au from high hardness to low hardness. Under either Mohs or Vickers hardness examination, the harness of Ag is the closest to that of Au.
  • the hardness is critical to IC, LED and SAW because if the material of packaging wire is too hard, it is easy to break or go through the IC chips and destroy the IC, LED or SAW package.
  • the order is Pd, Au, Cu, Ag from high resistance to low resistance.
  • Ag has the lowest resistance and has the best conductivity. Therefore, the alloy using Ag as a base metal is a good conductor, which is important to IC, LED and SAW.
  • the alloy includes Pd and excludes Mg and Al.
  • the advantages of adding Pd are (1) to increase the oxidation resistant effect; (2) to increase the oxidation resistance; (3) to decrease the diffusion rate between Ag and Al, thus to avoid the cracking of the intermetallic compounds and the creation of Kirkendall Voiding.
  • FIG. 1 and FIG. 2 respectively are a flow chart for manufacturing composite alloy bonding wire of the present invention and a drawing showing detailed sub-steps in the flow chart of FIG. 1 .
  • Step 100 a primary material of Ag is provided.
  • Step 102 the primary material is melted in a vacuum melting furnace (step 102 a ). Specific amount of a secondary metal material of Pd is added into the vacuum melting furnace (step 102 b ), and co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution (step 102 c ).
  • the Ag—Pd alloy solution consists of 90.00 ⁇ 99.99 wt. % Ag and 0.01 ⁇ 10.00 wt. % but no more than 10.00 wt. % Pd.
  • step 102 d continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with diameter of 4-8 mm.
  • the Ag—Pd alloy wire is rewired by a reeling machine (step 102 e ) and then composition analysis ( 102 f ) is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • Step 104 a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4-8 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm (step 104 a ). The Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a predetermined diameter of 1 mm or smaller than 1 mm (step 104 b ).
  • the Ag—Pd alloy wire with diameter 1 mm or smaller than 1 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm (step 104 c ). Then the Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm is sequentially drawn by the second thin drawing machine (step 104 d ), a very thin drawing machine (step 104 e ) and an ultra thin drawing machine (step 104 f ) to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.0508 mm (2.00 mil) to 0.010 mm (0.40 mil).
  • Step 106 the surface of the Ag—Pd alloy bonding wire is cleaned.
  • Step 108 the Ag—Pd alloy bonding wire is annealed to ensure a final product with desirable physical properties of breaking load and elongation.
  • the Ag—Pd alloy bonding wire can be applied to packaging process of IC, LED and SAW because the hardness of the bonding wire is within the range of 60-90 kp/mm2, and the resistance of the bonding wire is within the range of 0.00023-0.00050 ohm, mm2/m.
  • a primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution.
  • the Ag—Pd alloy solution consists of: 99.99 wt. % Ag and 0.001 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with a diameter of 4 mm.
  • the Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm.
  • the Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1 mm.
  • the Ag—Pd alloy wire with a diameter of 1 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm.
  • the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • a primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution.
  • the Ag—Pd alloy solution consists of: 95.00 wt. % Ag and 5.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with a diameter of 6 mm.
  • the Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 6 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm.
  • the Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1.0 mm.
  • the Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm.
  • the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • a primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution.
  • the Ag—Pd alloy solution consists of: 90.00 wt. % Ag and 10.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd solution to obtain an Ag—Pd alloy wire with a diameter of 8 mm.
  • the Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 8 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 2 mm.
  • the Ag—Pd alloy wire with a diameter of 2 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1.0 mm.
  • the Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm.
  • the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

A manufacturing method for a composite alloy bonding wire and products thereof. A primary material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary material to obtain an Ag—Pd alloy solution. The obtained Ag—Pd alloy solution is drawn to obtain an Ag—Pd alloy wire. The Ag—Pd alloy wire is then drawn to obtain an Ag—Pd alloy bonding wire with a predetermined diameter.

Description

    RELATED APPLICATIONS
  • This application is a continuation-in-part (CIP) application of U.S. patent application Ser. No. 12/408,952, filed on Mar. 23, 2009.
  • A co-pending application Ser. No. 12/408,987, filed on Mar. 23, 2009 and its divisional application Ser. No. 12/869,854, filed on Aug. 27, 2010, both have received the notice of allowance and will be patented.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention generally relates to a bonding wire used as a packaging wire, in particular, to a bonding wire used in the semiconductor packaging process.
  • 2. Description of Related Art
  • In semiconductor device packaging processes for IC, LED, SAW, a wire bonding process is often performed to electrically connect the chip to the substrate by a bonding wire which is used as a signal and electrical current transmitting medium between the chip and the substrate.
  • The primary characteristics of the bonding wire, such as the breaking load, elongation, loop, melting point, and bondability with IC chips depend on the materials of the bonding wire. The performance of the packaged semiconductor device is influenced by the characteristics of the bonding wire. According to different types of chip and substrate, the adapted bonding wire has different specification.
  • The conventional bonding wires are usually made of pure Au material. Pure Au bonding wire has better physical properties, such as elongation and electrical conductivity. However, pure Au bonding wire inevitably leads to a high cost.
  • Therefore, the subject of the present invention is to solve the above mentioned problem to provide a low cost bonding wire with performance comparable to pure Au bonding wire.
  • German patent no. DE 3122996 “Silver-palladium-magnesium aluminium alloy for internally oxidized electrical contacts, e.g. spring contacts” is related to an alloy used for electrical breaker and sliding contacts, e.g. in relays, switches and potentiometers. The alloy has the composition (by wt.) of 5-30% Pd, 0.1-0.5% Mg, 0.01-0.5% Al and balance Ag, which is not suitable for making as a bonding wire used for IC, LED, SAW because of the following reasons.
  • 1. When wt. % of Pd is more than 10%, the hardness of the wire will be larger than 150-200 kp/mm2. In comparison, the hardness of the bonding wire is normal 60-90 kp/mm2. That is, the wire made by the alloy of DE 3122996 may not be able to be drawn with a diameter as or less than 0.0175 mm (0.7 mil), and a soldering process may not be performed because it may cause cracking or catering to the IC or LED due to the hardness of the wire.
  • 2. Adding Mg will increase the wear resistance and hardness of the alloy. After adding Mg, an oxidation process has to be performed to obtain MgO particles in the alloy. However, MgO will make the alloy become hard and brittle to be used as a bonding wire for IC and LED. Besides, MgO will increase the resistance of the alloy and decrease the conductivity of the alloy. That is also not good for the alloy to be as a bonding wire.
  • 3. Adding Al will decrease the elongation of the alloy and increase the resistance of the alloy. In addition, adding Al in Ag will produce various configurations of Ag and Al compound in the alloy. These are negative for the alloy to be as the bonding wire.
  • 4. The resistance of the alloy of DE 3122996 is about 0.08-0.16 ohm, mm2/m which is 160-170 times of 0.00023-0.00050 ohm, mm2/m for a general resistance of a bonding wire. The higher the resistance of the bonding wire is, the lower the conductivity will be. The bonding wire with high resistance will reduce the transmission speed and the lifespan of the IC or LED.
    • SUMMARY OF THE INVENTION
  • The present invention is to provide a low cost composite alloy bonding wire made of silver (Ag) and palladium (Pd) and excluding magnesium (Mg) and aluminium (Al), capable of having performance as good as a pure Au bonding wire.
  • Accordingly, a manufacturing method for a composite alloy bonding wire is disclosed. A primary metal material of Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary metal material of Ag to obtain an Ag—Pd alloy solution. The obtained Ag—Pd alloy solution is then cast and drawn to obtain an Ag—Pd alloy wire. Finally, the obtained Ag—Pd alloy wire is then drawn to obtain an Ag—Pd alloy bonding wire with a predetermined diameter.
  • Besides, a composite alloy bonding wire made by the abovementioned manufacturing method is provided. The composite alloy bonding wire includes 90.00˜99.99 wt. % Ag and 0.01˜10.00 wt. % but no more than 10.00 wt. % Pd.
  • The composite alloy bonding wire made of silver and Palladium has performance as good as a pure Au bonding wire and a lower manufacturing cost.
    • BRIEF DESCRIPTION OF DRAWING
  • The features of the invention believed to be novel are set forth with particularity in the appended claims. The invention itself, however, may be best understood by reference to the following detailed description of the invention, which describes an exemplary embodiment of the invention, taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a flow chart for manufacturing composite alloy bonding wire of the present invention; and
  • FIG. 2 shows detailed sub-steps in the flow chart of FIG. 1.
    • DETAILED DESCRIPTION OF THE INVENTION
  • In cooperation with attached drawings, the technical contents and detailed description of the present invention are described thereinafter according to a preferable embodiment, being not used to limit its executing scope. Any equivalent variation and modification made according to appended claims is all covered by the claims claimed by the present invention.
  • Pure Ag has good characteristics as compared to Au or Cu (See below Table 1). However, Ag could not be used as a bonding wire as Au or Cu because during the process of ball bonding, an interfacial reaction will occur between Ag and Al which is in the Al pad formed on a chip to produce the intermetallic compounds such as Ag2Al, AgAl4 and Au5Al2 which have the hard and brittle characteristics. Meanwhile, the difference between the diffusion rates of Ag and Al is so significant, so Kirkendall voids will be created. As a result, high electrical resistance or open circuits, weak bond adherence or brittle bond heels will be created. The whole integrated circuit should lose its function.
  • TABLE 1
    Iterm Unit Gold Silver Copper Palladium
    Atomic Symbol Au Ag Cu Pd
    Atomic Number 79 47 29 46
    Melting Point ° C. 1064.4 961.9 1083 1554
    Boiling Point ° C. 3080 2212 2567 3140
    Density, 20° C. g/cm3 19.3 10.5 8.96 12.0
    Resistivity, 20° C. μΩcm 2.3 1.63 1.69 10.8
    Thermal Conductivity W/mK 316 429 401 71.8
    Specific Heat J/Kg K 130 234 386 244
    Hardness Mohs — 2.5 2.5 3.0 4.75
    Hardness
    Vickers MN/m2 215 215 369 461
    Hardness
  • Nevertheless, Ag should be used as a base metal because of its density, hardness, electrical conductivity, thermal conductivity and the cost. The density of Ag is 10.5 g/cm3, while it is 54.4% of Au. It is light enough to meet the weight requirement of the electronic products. In addition, comparing the hardness of Ag, Au, Cu and Pd, the order is Pd, Cu, Ag and Au from high hardness to low hardness. Under either Mohs or Vickers hardness examination, the harness of Ag is the closest to that of Au. The hardness is critical to IC, LED and SAW because if the material of packaging wire is too hard, it is easy to break or go through the IC chips and destroy the IC, LED or SAW package.
  • Comparing the electrical resistance of Ag, Au, Cu and Pd, the order is Pd, Au, Cu, Ag from high resistance to low resistance. Ag has the lowest resistance and has the best conductivity. Therefore, the alloy using Ag as a base metal is a good conductor, which is important to IC, LED and SAW.
  • Comparing the thermal conductivity of Ag, Au, Cu and Pd, the order is Ag, Cu, Au and Pd from high to low. Thermal conductivity of Ag is the biggest and it means Ag has the best cooling capacity, which is important to IC, LED and SAW.
  • Ag with the purity higher than 99.99% is easy to be broken because its hardness is low during the wire drawing process. As a result, during wire bonding process, partial wire arc may collapse because of the soft material, which may cause short circuit between the wire and cause IC, LED and SAW unable to use.
  • If pure Pd is used to be the base of the packaging wire, it is not practical because of the hardness, electrical resistance and high cost. Therefore, when Ag is used as the basic material for the alloy, other elements must be added to change the property of Ag. In the present application, the alloy includes Pd and excludes Mg and Al. The advantages of adding Pd are (1) to increase the oxidation resistant effect; (2) to increase the oxidation resistance; (3) to decrease the diffusion rate between Ag and Al, thus to avoid the cracking of the intermetallic compounds and the creation of Kirkendall Voiding.
  • Refer to FIG. 1 and FIG. 2, which respectively are a flow chart for manufacturing composite alloy bonding wire of the present invention and a drawing showing detailed sub-steps in the flow chart of FIG. 1.
  • Step 100, a primary material of Ag is provided.
  • Step 102, the primary material is melted in a vacuum melting furnace (step 102 a). Specific amount of a secondary metal material of Pd is added into the vacuum melting furnace (step 102 b), and co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution (step 102 c). The Ag—Pd alloy solution consists of 90.00˜99.99 wt. % Ag and 0.01˜10.00 wt. % but no more than 10.00 wt. % Pd.
  • Subsequently, continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with diameter of 4-8 mm (step 102 d). The Ag—Pd alloy wire is rewired by a reeling machine (step 102 e) and then composition analysis (102 f) is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • Step 104, a drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4-8 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm (step 104 a). The Ag—Pd alloy wire with a diameter of 3 mm or smaller than 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a predetermined diameter of 1 mm or smaller than 1 mm (step 104 b). The Ag—Pd alloy wire with diameter 1 mm or smaller than 1 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm (step 104 c). Then the Ag—Pd alloy wire with a diameter of 0.5 mm or smaller than 0.5 mm is sequentially drawn by the second thin drawing machine (step 104 d), a very thin drawing machine (step 104 e) and an ultra thin drawing machine (step 104 f) to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.0508 mm (2.00 mil) to 0.010 mm (0.40 mil).
  • Step 106, the surface of the Ag—Pd alloy bonding wire is cleaned.
  • Step 108, the Ag—Pd alloy bonding wire is annealed to ensure a final product with desirable physical properties of breaking load and elongation.
  • The Ag—Pd alloy bonding wire can be applied to packaging process of IC, LED and SAW because the hardness of the bonding wire is within the range of 60-90 kp/mm2, and the resistance of the bonding wire is within the range of 0.00023-0.00050 ohm, mm2/m.
  • The invention is more detailed described by three embodiments below:
    • Embodiment 1
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 99.99 wt. % Ag and 0.001 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with a diameter of 4 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 4 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm. The Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1 mm. The Ag—Pd alloy wire with a diameter of 1 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
    • Embodiment 2
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 95.00 wt. % Ag and 5.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd alloy solution to obtain an Ag—Pd alloy wire with a diameter of 6 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 6 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 3 mm. The Ag—Pd alloy wire with a diameter of 3 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1.0 mm. The Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
    • Embodiment 3
  • A primary material of Ag is provided and is melted in a vacuum melting furnace. Then, specific amount of a secondary metal material of Pd is added into the vacuum melting furnace, and is co-melted with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy solution. The Ag—Pd alloy solution consists of: 90.00 wt. % Ag and 10.00 wt. % Pd.
  • Continuous casting and drawing processes are performed on the Ag—Pd solution to obtain an Ag—Pd alloy wire with a diameter of 8 mm. The Ag—Pd alloy wire is rewired by a reeling machine and then composition analysis is performed on the Ag—Pd alloy wire to check if the obtained composition meets the requirement.
  • A drawing process is performed on the Ag—Pd alloy wire; the obtained Ag—Pd alloy wire with a diameter of 8 mm is drawn by a first thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 2 mm. The Ag—Pd alloy wire with a diameter of 2 mm is drawn by a second thick drawing machine to obtain an Ag—Pd alloy wire with a diameter of 1.0 mm. The Ag—Pd alloy wire with a diameter of 1.0 mm is drawn by a first thin drawing machine to obtain an Ag—Pd alloy wire with a diameter of 0.18 mm. Then the Ag—Pd alloy wire with a diameter of 0.18 mm is sequentially drawn by the second thin drawing machine, a very thin drawing machine and an ultra thin drawing machine to obtain an ultra thin Ag—Pd alloy bonding wire with a predetermined diameter of 0.050 mm to 0.010 mm.
  • Finally, the surface of Ag—Pd alloy bonding wire is cleaned and is annealed.
  • More examples showing the characteristics for the Ag—Pd alloy bonding wire with the diameter of 1.0 mil of the present are listed as below Table 2.
  • TABLE 2
    TYPE DH FH F1H F2H F3H F4H F5H
    Ag (Wt %) 99.79% 99.45 99.19 99.01 98.15 95.66 92.95
    Pd (Wt %) 0.21 0.55 0.81 0.99 1.85 4.34 7.05
    Test date 080615 080621 080714 080716 080802 080811 080824
    Amount (Kg) 2.395 2.015 3.401 3.030 3.450 3.087 2.861
    Draw to V V V V V V V
    1.0-0.13 mm
    Draw to V V V V V V V
    0.13-0.05 mm
    Draw to V V V V V V V
    0.05-0.038 mm
    Draw to V V V V V V V
    0.038-0.03 mm
    Draw to V V V V V V V
    0.03-0.025 mm
    Drawing Test V V V V V V V
    Break Load (gf) 11.21 12.65 13.11 13.43 13.65 14.37 16.27
    Elongation (%) 3.41 3.65 4.12 4.57 5.89 5.83 4.41
    Hardness (Hv) 54.8 Hv 57.1 Hv 57.4 Hv 57.8 Hv 58.2 Hv 59.6 Hv 64.5 Hv
    Resistance (μΩcm) 1.72 1.76 1.84 2.14 2.56 3.50 4.62
  • Specifically, the F4H bondability and reliability test report is attached for reference.
  • While the invention is described in by way of examples and in terms of preferred embodiments, it is to be understood that the invention is not limited thereto. On the contrary, the aim is to cover all modifications, alternatives and equivalents falling within the spirit and scope of the invention as defined by the appended claims.

Claims (5)

1. A manufacturing method for a composite alloy bonding wire, comprising:
a) providing a primary material of Ag;
b) melting the primary material in a vacuum melting furnace, adding a secondary metal material of Pd into the vacuum melting furnace and co-melting with the primary material in the vacuum melting furnace to obtain an Ag—Pd alloy that excludes Mg and Al;
c) casting and drawing the Ag—Pd alloy to obtain an Ag—Pd alloy wire; and
d) drawing the Ag—Pd alloy wire to obtain an Ag—Pd alloy bonding wire with a predetermined diameter used for packaging processes for IC, LED or SAW.
2. The manufacturing method according to claim 1, wherein the weight percent of Ag in step a) is 90.00%˜99.99%.
3. The manufacturing method according to claim 2, wherein the weight percent of Pd in step b) is not more than 10.00 wt. %.
4. The manufacturing method according to claim 1, wherein the surface of the Ag—Pd alloy bonding wire is cleaned and is annealed after step d).
5. A alloy bonding wire, comprising:
90.00˜99.99 wt. % Ag; and
0.01˜10.00 wt. % but not more than 10.00 wt. % Pd, wherein the Ag and Pd are melted to obtain an Au—Ag—Pd alloy that excludes Mg and Al, and Ag and Pd are essentially uniformly distributed in the alloy bonding wire, continuous casting and drawing processes are performed on the Ag—Pd alloy to obtain the alloy bonding wire used for packaging processes for IC, LED or SAW.
US13/334,047 2009-03-23 2011-12-21 Composite alloy bonding wire and manufacturing method thereof Abandoned US20120093681A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/334,047 US20120093681A1 (en) 2009-03-23 2011-12-21 Composite alloy bonding wire and manufacturing method thereof
US13/607,116 US20130160902A1 (en) 2011-12-21 2012-09-07 Manufacturing method for composite alloy bonding wire
US13/627,880 US20130164169A1 (en) 2011-12-21 2012-09-26 Composite alloy bonding wire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/408,987 US8101123B2 (en) 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof
US13/334,047 US20120093681A1 (en) 2009-03-23 2011-12-21 Composite alloy bonding wire and manufacturing method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US12/408,987 Continuation-In-Part US8101123B2 (en) 2009-03-23 2009-03-23 Composite alloy bonding wire and manufacturing method thereof

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/607,116 Continuation-In-Part US20130160902A1 (en) 2011-12-21 2012-09-07 Manufacturing method for composite alloy bonding wire
US13/627,880 Continuation-In-Part US20130164169A1 (en) 2011-12-21 2012-09-26 Composite alloy bonding wire

Publications (1)

Publication Number Publication Date
US20120093681A1 true US20120093681A1 (en) 2012-04-19

Family

ID=45934320

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/334,047 Abandoned US20120093681A1 (en) 2009-03-23 2011-12-21 Composite alloy bonding wire and manufacturing method thereof

Country Status (1)

Country Link
US (1) US20120093681A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2703116A1 (en) * 2012-09-04 2014-03-05 Heraeus Materials Technology GmbH & Co. KG Silver alloy wire for bonding applications

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09275120A (en) * 1996-04-04 1997-10-21 Nippon Steel Corp Semiconductor device
US20040035503A1 (en) * 2000-12-19 2004-02-26 Hideki Fujii Titanium sheet, plate, bar or wire having high ductility and low material anisotropy and method of producing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09275120A (en) * 1996-04-04 1997-10-21 Nippon Steel Corp Semiconductor device
US20040035503A1 (en) * 2000-12-19 2004-02-26 Hideki Fujii Titanium sheet, plate, bar or wire having high ductility and low material anisotropy and method of producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Machine Translation of JP 09275120, 1997. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2703116A1 (en) * 2012-09-04 2014-03-05 Heraeus Materials Technology GmbH & Co. KG Silver alloy wire for bonding applications

Similar Documents

Publication Publication Date Title
US8101030B2 (en) Manufacturing method for composite alloy bonding wire
CN100355065C (en) Semiconductor device and method for manufacturing the same
US20210167034A1 (en) Chip arrangements
US10504868B2 (en) Solder joining
KR100702662B1 (en) Copper bonding wire for semiconductor packaging
US5366692A (en) Alloy connecting materials for semiconductors
JP3969671B2 (en) Au alloy bonding wire
CN103131885A (en) Silver bond wire for semiconductor devices
US6700199B2 (en) Gold-silver bonding wire for semiconductor device
JP6029756B2 (en) Semiconductor device and manufacturing method thereof
TWI812853B (en) Wire bonding structure, bonding wire used in the wire bonding structure, and semiconductor device
WO2014203425A1 (en) Zn-based lead-free solder and semiconductor power module
US20130164169A1 (en) Composite alloy bonding wire
US20090297391A1 (en) Manufacturing method for a silver alloy bonding wire and products thereof
US20130160902A1 (en) Manufacturing method for composite alloy bonding wire
US20120093681A1 (en) Composite alloy bonding wire and manufacturing method thereof
JP5996853B2 (en) Ball bonding wire
US8987873B2 (en) Super integrated circuit chip semiconductor device
JP5473388B2 (en) Semiconductor device and manufacturing method of semiconductor device
JPH0726167B2 (en) Au alloy extra fine wire for bonding wire of semiconductor device
US20100239455A1 (en) Composite alloy bonding wire and manufacturing method thereof
JPH11264038A (en) Copper alloy foil
JPS6218614B2 (en)
KR100618052B1 (en) Au alloy bonding wire for semiconductor device
KR20220150940A (en) Gold-coated bonding wire and its manufacturing method, semiconductor wire bonding structure, and semiconductor device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION