US20210167034A1 - Chip arrangements - Google Patents

Chip arrangements Download PDF

Info

Publication number
US20210167034A1
US20210167034A1 US17/149,741 US202117149741A US2021167034A1 US 20210167034 A1 US20210167034 A1 US 20210167034A1 US 202117149741 A US202117149741 A US 202117149741A US 2021167034 A1 US2021167034 A1 US 2021167034A1
Authority
US
United States
Prior art keywords
zinc
alloy
solder alloy
chip
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US17/149,741
Inventor
Manfred Mengel
Alexander Heinrich
Steffen ORSO
Thomas Behrens
Oliver EICHINGER
Lim Fong
Evelyn Napetschnig
Edmund Riedl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to US17/149,741 priority Critical patent/US20210167034A1/en
Publication of US20210167034A1 publication Critical patent/US20210167034A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/282—Zn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C18/00—Alloys based on zinc
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C18/00—Alloys based on zinc
    • C22C18/04—Alloys based on zinc with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C22C30/04—Alloys containing less than 50% by weight of each constituent containing tin or lead
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C22C30/06—Alloys containing less than 50% by weight of each constituent containing zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges

Definitions

  • Suitable alternative solder materials will in future be selected based on their economic viability. The cost of suitable alternatives would have to be at least comparable to that of current standard solder materials. Suitable alternatives will further have to meet the requirements and have the necessary properties to be used as a connection element, e.g. a solder connection. Such alternatives would have to be compatible for use on various surfaces, e.g. on lead frames or on chip back sides. They would also have to be electrically and thermally conductive, and robust and reliable enough for their application, e.g. being subjected to high temperatures or varying temperature loads.
  • solder material should lie above 260° C., so that the solder material will not melt and/or soften when subsequent processes are carried out, e.g. when soldering the printer circuit board.
  • Further requirements of alternative solder materials are that they meet the requirements of ductility such that solder wires may be provided from the solder materials.
  • the semiconductor field has not had a lead-free soft solder alternative for the connection of a chip to a lead frame, or from a clip to a bond pad, which may be achieved in mass production.
  • the technical challenge lies in finding a lead-free solder which has a melting temperature over that of the solder material used in printed circuit boards e.g. Sn—Ag—Cu systems, with typical melting temperatures of 260° C.
  • the melting temperature should not be too high either, as high mechanical stress would have to be installed in the system to cool down and at the same time, solidify the solder.
  • a lead-free solder material apart from the melting temperature requirements, should have good wettability with various metallic surfaces e.g. chip surfaces or lead frames which may be used, to ensure that an optimal connection is provided.
  • the solder material should further possess a certain ductility so that it can be produced and handled in wire form. That is, the solder material in wire form should not be brittle.
  • the solder material has to withstand repetitive melting and solidification conditions, and mechanical and thermomechanical loads which may be applied to the material, without succumbing to degradation.
  • a chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.
  • a chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating, wherein the plating includes at least one of nickel or nickel-phosphorous; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 20% aluminum, 1% to 20% magnesium, wherein a balance of the zinc-based solder alloy is zinc.
  • FIG. 1 shows a graph representing thermal conductivity (W/mK) vs. electrical conductivity (10 6 S/m) of solder alloys;
  • FIG. 2 shows a phase diagram 200 of an Al—Zn alloy
  • FIG. 3 shows a phase diagram 300 of a Ga—Zn alloy
  • FIG. 4 shows a phase diagram 400 of a Sn—Zn alloy
  • FIG. 5 shows a phase diagram 500 of a Ag—Zn alloy
  • FIG. 6 shows a phase diagram 600 of a Cu—Zn alloy
  • FIG. 7 shows a phase diagram 700 of a Ni—Zn alloy
  • FIG. 8 shows a method for attaching a chip to a carrier according to various aspects
  • FIGS. 9A and 9B show an arrangement for attaching a chip to a carrier according to various aspects
  • FIGS. 10A to 10C show an arrangement including a solder alloy applied to a carrier according to various aspects
  • FIGS. 11A and 11B show images of an arrangement including a solder alloy according to various aspects
  • FIGS. 12 to 14 show differential scanning calorimetry plots of a solder alloy according to various aspects.
  • FIG. 15 shows a plot of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and magnesium.
  • FIG. 16 shows a plot of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and germanium.
  • a lead-free (Pb-free) multilayer solder connection system for electronic components, including at least one side of a chip, a solder connection, e.g. a solder alloy, a carrier, e.g. a lead frame, and a plating, e.g. a lead frame plating, formed over the carrier.
  • a solder connection e.g. a solder alloy
  • a carrier e.g. a lead frame
  • a plating e.g. a lead frame plating
  • FIG. 1 a plot 100 illustrating thermal conductivity (W/mK) versus electrical conductivity (10 6 S/m) is shown. Pure zinc, and a zinc alloy including aluminum and germanium are shown from measurements and from calculations to have higher thermal conductivity and electrical conductivity compared to lead-based and tin-based solders.
  • FIG. 2 shows a phase diagram 200 of an Al—Zn binary alloy.
  • the Al—Zn binary alloy may achieve a melting point of approximately 650° C.
  • FIG. 3 shows a phase diagram 300 of a Ga—Zn binary alloy.
  • the Ga—Zn binary alloy may achieve a melting point of approximately 300° C.
  • FIG. 4 shows a phase diagram 400 of a Sn—Zn binary alloy.
  • the Sn—Zn binary alloy may achieve a melting point of approximately 475° C.
  • FIG. 5 shows a phase diagram 500 of a Ag—Zn binary alloy.
  • the Ag—Zn binary alloy may achieve a melting point of approximately 700° C.
  • FIG. 6 shows a phase diagram 600 of a Cu—Zn binary alloy.
  • the Cu—Zn binary alloy may achieve a melting point of approximately 425° C.
  • Table 606 shows the different phases with related alloy concentrations of the Cu—Zn binary alloy.
  • FIG. 7 shows a phase diagram 700 of a Ni—Zn binary alloy.
  • the Ni—Zn binary alloy may achieve a melting point of approximately 700° C.
  • Table 706 shows the different phases with related alloy concentrations of the Ni—Zn binary alloy.
  • FIG. 8 shows a method for attaching and/or joining a chip 814 to a carrier.
  • the method may include, in 800 , selecting carrier, 802 e.g. a substrate or a lead frame; in 804 , forming plating 806 , e.g. a nickel plating, over carrier 802 ; in 808 , depositing solder alloy 810 over carrier 802 , wherein solder alloy 810 may be formed directly on plating 806 .
  • depositing solder alloy 810 may be carried out according to a conventional wire bond process by melting solder alloy 810 which may be in wire and a soft solder, over carrier 802 , e.g. by forming a solder dot from solder alloy 810 .
  • Solder alloy 810 may be deposited in ribbon form or plated over carrier 802 . Alternatively, solder alloy 810 may be placed over or directly on chip 814 at wafer level, i.e. before dicing of the wafer or on chip backside 820 wherein the chip back side may include chip back side metallization 816 . In 812 , chip 814 may be attached to carrier 802 via solder alloy 810 , wherein solder alloy 810 may be a connecting or joining material between chip 814 and carrier 802 . In 822 , a further solder alloy 828 may be configured to attach a clip-on connection to a contact surface on a chip front side 830 by depositing solder alloy 810 over one or more contact pads 818 on the chip front side 830 .
  • One or more contact wires 824 may be attached to chip 814 and/or contact pads 818 via solder alloy 828 .
  • the deposition and placement of solder alloys 810 , and further solder alloy 828 may be carried out by dispensing a paste of said alloys and/or through a plasma gun.
  • Solder alloy 810 may be used for joining chip back side 820 to carrier 802 , e.g. a lead frame, even if chip 814 is not a silicon-based chip.
  • Chip back side 820 may include a backside metallization 816 system including a multilayer system or part or a variant of a multilayer system.
  • the multilayer system may include individual layers having individual functions.
  • the multilayer system may include contact layer 816 a for contacting to a semiconductor material, e.g. an aluminum contact layer, wherein the aluminum forms a layer having a thickness ranging from 50 nm to 1000 nm.
  • a semiconductor material e.g. an aluminum contact layer
  • the multilayer system may include barrier layer 816 b, e.g. a titanium (Ti) or titanium-tungsten (TiW) barrier layer, wherein barrier layer 816 b may have a thickness ranging from 50 nm to 1000 nm.
  • barrier layer 816 b e.g. a titanium (Ti) or titanium-tungsten (TiW) barrier layer, wherein barrier layer 816 b may have a thickness ranging from 50 nm to 1000 nm.
  • the multilayer system may include solder reaction layer 816 c, the solder reaction layer 816 c including at least one of a group of the following elements and/or alloys thereof: nickel, nickel-vanadium, silver, aluminum, gold, platinum, palladium, nickel, wherein the solder reaction layer 816 c may have a thickness ranging from 50 nm to 1000 nm.
  • Solder reaction layer 816 c may be a “partner” layer with solder alloy 810 as the thickness of solder reaction layer 816 c may be selected so that during the solder process it does not dissolve completely in solder alloy 810 .
  • the multilayer system may include oxidation protection layer 816 d to prevent oxidation of the solder reaction layer 816 c as solder reaction layers 816 c including silver, gold, platinum, palladium or alloys thereof, may be prone to oxidation.
  • Oxidation protection layer 816 d may have a thickness ranging from 50 nm to 1000 nm.
  • Substrate 802 may be formed from one of the following group of materials: copper, nickel, silver or a ceramic.
  • Plating 806 may be formed over substrate 802 , e.g. substrate 802 may be a lead frame wherein lead frame plating may be formed over the lead frame.
  • Plating 806 may include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination.
  • Plating 806 may be configured to be in connection with solder alloy 810 .
  • substrate 802 may include plating 806 including copper in combination with nickel and/or nickel phosphorus, wherein plating 806 may be a lead frame plating configured to be in connection with the solder alloy. According to various aspects, plating 806 thickness may lie in the range from about 100 nm to about 3 ⁇ m.
  • chip 814 may include chip back side 820 including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver, wherein chip back side 820 may be configured to be in connection with solder alloy 810 .
  • Solder alloy 810 A may include zinc, aluminum, magnesium and gallium, wherein aluminum constitutes by weight 8% to 20% of alloy 810 A, magnesium constitutes by weight 0.5% to 20% of alloy 810 A and gallium constitutes by weight 0.5% to 20% of alloy 810 A, the rest of alloy 810 A including zinc.
  • Solder alloy 810 A may be represented by the chemical formula ZnAl 4.5 Ga 1 Mg 1 .
  • Solder alloy 810 A may be represented by the chemical formula ZnAl 12 Ga 1 Mg 1 .
  • solder alloy 810 A may be a solder wire.
  • Aluminum may constitute by weight 3% to 12% of alloy 810 A.
  • Magnesium may constitute by weight 0.5% to 4% of alloy 810 A.
  • Gallium may constitute by weight 0.5% to 4% of alloy 810 A.
  • Solder alloy 810 B may include zinc, aluminum, tin and magnesium, wherein aluminum constitutes by weight 1% to 30% of alloy 810 B, magnesium constitutes by weight 0.5% to 20% of alloy 810 B and tin constitutes by weight 0.5% to 6.5% of alloy 810 B, the rest of alloy 810 B including zinc.
  • Aluminum may constitute by weight 3% to 8% of alloy 810 B.
  • Magnesium may constitute by weight 0.5% to 4% of alloy 810 B.
  • Tin may constitute by weight 0.5% to 4% of alloy 810 B.
  • Solder alloy 810 B may be represented by the chemical formula ZnAl 4 Sn 2 Mg 1 .
  • Solder alloy 810 C may include zinc, aluminum, germanium and gallium, wherein aluminum constitutes by weight 1% to 30% of alloy 810C, germanium constitutes by weight 0.5% to 20% of alloy 810 C and gallium constitutes by weight 0.5% to 20% of alloy 810 C, the rest of alloy 810 C including zinc.
  • Aluminum may constitute by weight 3% to 8% of alloy 810 C.
  • Germanium may constitute by weight 0.5% to 4% of alloy 810 C.
  • Gallium may constitute by weight 0.5% to 4% of alloy 810 C.
  • Solder alloy 810 D may include zinc, aluminum and germanium, wherein aluminum constitutes by weight 1% to 20% of alloy 810 D, germanium constitutes by weight 1% to 20% of alloy 810 D, the rest of alloy 810 D including zinc.
  • Solder alloy 810 D may be represented by the chemical formula ZnAl 5 Ge 3 .
  • Solder alloy 810 D may be represented by the chemical formula ZnAl 12 Ge 3 .
  • Solder alloy 810 D may be represented by the chemical formula ZnAl 6 Ge 3 .
  • Solder alloy may be represented by the chemical formula ZnAl 6 Ge 5 .
  • aluminum may constitute by weight 3% to 8% of alloy 810 D.
  • germanium may constitute by weight 1% to 6% of alloy 810 D.
  • Solder alloy 810 E may include zinc, aluminum and magnesium, wherein aluminum constitutes by weight 1% to 20% of alloy 810 E, magnesium constitutes by weight 1% to 20% of alloy 810 E, the rest of alloy 810 E including zinc. Aluminum may constitute by weight 3% to 8% of alloy 810 E. Magnesium may constitute by weight 0.5% to 4% of alloy 810 E.
  • Solder alloy 810 F may include zinc and tin, wherein zinc constitutes by weight 10% to 91% of alloy 810 F.
  • Solder alloy 810 F may be represented by the chemical formula Zn 40 Sn 60 .
  • Zinc may constitute by weight 10% to 15% of alloy 810 F.
  • Solder alloy 810 G may include zinc and silver, wherein zinc constitutes by weight 26% to 98% of alloy 810 G. Zinc may constitute by weight 83% to 99% of alloy 810 G.
  • Solder alloy 810 H may include zinc and copper, wherein zinc constitutes by weight 80% to 98% of alloy 810 H. Zinc may constitute by weight 88% to 99% of alloy 810 H.
  • each of solder alloys 810 A to 810 H may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of alloys 810 A to 810 H.
  • FIG. 9A shows arrangements 930 , 932 and 934 according to various aspects.
  • Arrangement 930 shows solder alloy 810 , e.g. solder alloy 810 D deposited on carrier 802 , e.g. a lead frame, before attaching chip 814 to carrier 802 .
  • Arrangement 932 shows an ultrasonic plot of said arrangement 930 after attaching chip 814 using a chip attachment process to said solder alloy 810 , e.g. solder alloy 810 D, e.g. solder alloy 810 D having a chemical formula ZnAl 5 Ge 3 .
  • Arrangement 934 shows an ultrasonic plot according to arrangement 932 wherein solder alloy 810 has a chemical formula ZnAl 12 Ge 3 .
  • FIG. 9B shows arrangements 936 , 938 and 940 according to various aspects.
  • Arrangement 936 shows an ultrasonic plot of solder alloy 810 , e.g. solder alloy 810 A on carrier 802 , e.g. a lead frame, after attaching chip 814 using a chip attachment process to said solder alloy 810 , e.g. solder alloy 810 A having a chemical formula ZnAl 4.5 Ga 1 Mg 1 .
  • Arrangement 938 shows an ultrasonic plot according to arrangement 936 , wherein solder alloy 810 has a chemical ZnAl 12 Ga 1 Mg 1 .
  • White colored spots in the ultrasonic plots are indicating delamination or voids whereas black areas are directly connected homogenous solder areas.
  • FIG. 10A shows an arrangement 1030 wherein solder alloy 810 , e.g. solder alloy 810 A, including zinc, aluminum, magnesium and gallium may be applied to a carrier 802 , e.g. a lead frame, wherein the lead frame includes lead frame plating 806 including NiNiP.
  • FIG. 10B shows an arrangement 1032 which shows various aspects according to arrangement 1030 wherein lead frame plating 806 includes copper instead of NiNiP.
  • Solder alloy 810 A shows good wetting behavior on both copper surfaces and NiNiP surfaces of carrier 802 , providing the best performances in terms of homogeneity of the solder alloy 810 A on the surface of lead frame plating 806 .
  • FIG. 10C shows arrangements 1034 and 1036 according to various aspects.
  • Arrangement 1034 shows an image of the interface between carrier 802 , e.g. a lead frame, and solder alloy 810 A.
  • Arrangement 1036 shows an image of the interface between carrier 802 , e.g. a lead frame, solder alloy 810 A, and chip 814 .
  • two chips 814 are attached to leadframe 802 .
  • the white spots insides the chip areas 814 may be attributed to delaminations or voids.
  • the void rate obtained in solder alloy 810 A on plating 806 e.g. lead frame plating including NiNiP is less compared to that of a plating 806 including a Cu lead frame plating.
  • FIG. 11A shows a scanning electron microscopy (SEM) image 1130 of a cross section of a solder alloy 810 A having a chemical formula ZnAl 12 Ga 1 Mg 1 deposited on carrier 802 e.g. a copper lead frame, and solder alloy 810 A joined to chip back side 820 .
  • Chip back side 820 may include chip back side metallization 816 wherein back side metallization 816 may include an Al—Ti—Ag stack.
  • Back side metallization 816 may include contact layer 816 a, e.g. aluminum contact layer; barrier layer 816 b, e.g. titanium barrier layer; and solder reaction layer 816 c, e.g. silver solder reaction layer.
  • FIG. 11B shows image 1132 wherein marked portions of SEM image 1130 are provided, from which Energy Dispersive X-ray Spectroscopy (EDX) data may be extracted.
  • Spectrum 2 1134 includes zinc, copper and aluminum.
  • Spectrum 3 1136 includes zinc, copper, aluminum and silver.
  • Spectrum 4 1138 includes zinc, copper, silver and trace amounts (less than 2%) of aluminum.
  • Spectrum 5 1140 includes zinc, aluminum, copper and trace amounts (less than 2%) of silver.
  • Spectrum 6 1142 includes zinc, aluminum and trace amounts (less than 2%) of silver.
  • the silver diffuses from solder reaction layer 816 c into solder alloy 810 A.
  • Gallium may be detected between the grain boundaries, which improves the mechanical properties of the solder, the tensile strength of 345 MPa of solder alloy 810 A having a chemical formula ZnAl 12 Ga 1 Mg 1 may be attained. Copper diffusion from the leadframe into all bright visible parts of the cross-section is detected.
  • FIG. 12 shows differential scanning calorimetry plots (DSC) 1230 , 1236 of solder alloy 810 A.
  • DSC plot 1230 shows Heat flow (W/g) 1232 versus Temperature (° C.) 1234 with respect to solder alloy 810 A having chemical formula ZnAl 4.5 Ga 1 Mg 1 according to an aspect.
  • Solder alloy 810 A shows exothermic peaks at approximately 262° C., 340° C. and 366° C. The peak representing an enthalpy of 9.0 J/g and peak temperature 261.8° C. reflects an eutectoid reaction between zinc and aluminum.
  • any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g., Ga, Mg.
  • the further peaks reflect the melting temperature range and is of importance for the setting of the process parameters.
  • the occurrence of 2 or more peaks at specific positions are characteristic of a specific composition of the alloy with specific phases formed during the manufacturing process of the wires.
  • DSC plot 1236 shows Heat flow (W/g) 1238 versus Temperature (° C.) 1240 with respect to solder alloy 810 A having chemical formula ZnAl 12 Ga 1 Mg 1 according to an aspect.
  • Solder alloy 810 A shows exothermic peaks at approximately 273° C., 344° C. Thus, a melting point of approximately 344° C. may be attained in solder alloy 810 A having chemical formula ZnAl 12 Ga 1 Mg 1 .
  • the peak representing an enthalpy of 24.4 J/g and peak temperature 272.6° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ga, Mg.
  • FIG. 13 shows DSC plot 1330 showing Heat flow (W/g) 1332 versus Temperature (° C.) 1334 with respect to solder alloy 810 B having chemical formula ZnAl 4 Sn 2 Mg 1 according to various aspects.
  • Solder alloy 810 B shows exothermic peaks at approximately 284° C., 336° C. and 365° C.
  • the peak representing an enthalpy of 9.0 J/g and peak temperature 284.4° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Sn, Mg.
  • FIG. 14 shows differential scanning calorimetry plots (DSC) 1430 , 1436 of solder alloy 810 D.
  • DSC plot 1430 shows Heat flow (W/g) 1432 versus Temperature (° C.) 1434 with respect to solder alloy 810 D having chemical formula ZnAl 5 Ge 3 according to various aspects.
  • Solder alloy 810 D shows exothermic peaks at approximately 283° C. and 359° C. The peak representing an enthalpy of 8.6 J/g and peak temperature 282.8° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ge.
  • DSC plot 1436 shows Heat flow (W/g) 1438 versus Temperature (° C.) 1440 with respect to solder alloy 810 D having chemical formula ZnAl 12 Ge 3 according to various aspects.
  • Solder alloy 810 D shows exothermic peaks at approximately 283° C., 359° C., 368° C. and 412° C.
  • the peak representing an enthalpy of 24.4 J/g and peak temperature 282.8° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ge.
  • FIG. 15 shows a plot 1500 of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and magnesium.
  • a lowest achievable melting temperature for the solder alloy of approximately 350° C. may be attainable at an atomic zinc composition of between approximately 91% to 96%.
  • Axis 1532 indicates the molar fraction of aluminum relative to zinc.
  • Axis 1534 indicates the molar fraction of zinc relative to magnesium.
  • Axis 1536 indicates the molar fraction of magnesium relative to aluminum.
  • the quaternary solder compositions 810 B (ZnAl4Sn2Mg1) and 810 A (ZnAl5Mg1Ga1) could be placed slightly above the horizontal 400 ° C. line of the diagram in FIG. 15 since the low concentrations of tin for 810 B and gallium for 810 A will not change significantly the liquidus temperatures of the solders 810 B and 810 A.
  • FIG. 16 shows a plot 1600 of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and germanium.
  • Axis 1632 indicates the molar fraction of aluminum relative to zinc.
  • Axis 1634 indicates the molar fraction of zinc relative to germanium.
  • Axis 1636 indicates the molar fraction of germanium relative to aluminum.
  • Plot 1638 shows a magnified portion of selected portion 1640 , wherein a lowest achievable melting temperature for the solder alloy of approximately 335° C. may be attainable at an atomic composition of 97 Zn %, 1.5 Al % and 1.5 Ge %.
  • Solder alloy 810 having the chemical formula ZnAl 12 Ge 3 and ZnAl 5 Ge 3 are points indicated on plot 1600 and 1638 . With an atomic composition of 1.6% aluminum, 80% zinc and 3.4% germanium, a four-phase intersection may be obtained. A melting temperature of 343.42° C. may further be obtained.
  • a solder alloy may include zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.
  • the solder alloy may be represented by the chemical formula ZnAl 4.5 Ga 1 Mg 1 .
  • the solder alloy may be represented by the chemical formula ZnAl 12 Ga 1 Mg 1 .
  • the solder alloy may be a solder wire.
  • the aluminum may constitute by weight 3% to 12% of the alloy.
  • the magnesium may constitute by weight 0.5% to 4% of the alloy.
  • the gallium may constitute by weight 0.5% to 4% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • a solder alloy may include zinc, aluminum, tin and magnesium, wherein the aluminum constitutes by weight 1% to 30% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the tin constitutes by weight 0.5% to 6.5% of the alloy, the rest of the alloy including zinc.
  • the aluminum may constitute by weight 3% to 8% of the alloy.
  • the magnesium may constitute by weight 0.5% to 4% of the alloy.
  • the tin may constitute by weight 0.5% to 4% of the alloy.
  • the solder alloy may be represented by the chemical formula ZnAl 4 Sn 2 Mg 1 .
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • a solder alloy may include zinc, aluminum, germanium and gallium, wherein the aluminum constitutes by weight 1% to 30% of the alloy, the germanium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.
  • the aluminum may constitute by weight 3% to 8% of the alloy.
  • the germanium may constitute by weight 0.5% to 4% of the alloy.
  • the gallium may constitute by weight 0.5% to 4% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • an arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including: zinc, aluminum and germanium, wherein the aluminum constitutes by weight 1% to 20% of the alloy, the germanium constitutes by weight 1% to 20% of the alloy, the rest of the alloy including zinc.
  • the solder alloy may be represented by the chemical formula ZnAl 5 Ge 3 .
  • the solder alloy may be represented by the chemical formula ZnAl 12 Ge 3 .
  • the solder alloy is represented by the chemical formula ZnAl 6 Ge 3 .
  • the solder alloy may be represented by the chemical formula ZnAl 6 Ge 5 .
  • the aluminum may constitute by weight 3% to 8% of the alloy.
  • the germanium may constitute by weight 1% to 6% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form,
  • the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • the lead frame plating thickness lies between 100 nm to 3 ⁇ m.
  • the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver, wherein the chip back side is configured to be in connection with the solder alloy.
  • an arrangement may include a chip; a solder alloy for attaching the chip to a lead frame; the solder alloy including zinc, aluminum and magnesium, wherein the aluminum constitutes by weight 1% to 20% of the alloy, the magnesium constitutes by weight 1% to 20% of the alloy, the rest of the alloy including zinc.
  • the aluminum may constitute by weight 3% to 8% of the alloy.
  • the magnesium may constitute by weight 0.5% to 4% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form,
  • the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • the lead frame plating thickness lies between 100 nm to 3 ⁇ m.
  • the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • an arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and tin, wherein the zinc constitutes by weight 10% to 91% of the alloy.
  • the solder alloy may be represented by the chemical formula Zn 40 Sn 60 .
  • the zinc may constitute by weight 10% to 15% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form,
  • the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • the lead frame plating thickness lies between 100 nm to 3 ⁇ m.
  • the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • an arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and silver, wherein the zinc constitutes by weight 26% to 98% of the alloy.
  • the zinc may constitute by weight 83% to 99% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form,
  • the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • the lead frame plating thickness lies between 100 nm to 3 nm.
  • the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • an arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and copper, wherein the zinc constitutes by weight 80% to 98% of the alloy.
  • the zinc may constitute by weight 88% to 99% of the alloy.
  • the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form,
  • the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy.
  • the lead frame plating thickness lies between 100 nm to 3 ⁇ m.
  • the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.

Abstract

A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

Description

    CROSS-REFERENCED APPLICATIONS
  • This is a continuation of U.S. application Ser. No. 15/659,670 filed on Jul. 26, 2017, which is a continuation of U.S. application Ser. No. 13/154,523 filed on Jun. 7, 2011 (issued as U.S. Pat. No. 9,735,136), the contents of which are all incorporated by reference in their entirety.
    • TECHNICAL FIELD
  • Various aspects relate generally to chip arrangements.
    • BACKGROUND
  • Decisions have been made by the European Union to ban environmentally hazardous substances in the near future; such decisions having been made with regard to end-of-life vehicles ELV, indicating that hazardous substances such as lead should be banned. Lead-based products, e.g. lead-based solder materials used for die or semiconductor chip attachment, will be banned and removed from the market in the near future.
  • Suitable alternative solder materials will in future be selected based on their economic viability. The cost of suitable alternatives would have to be at least comparable to that of current standard solder materials. Suitable alternatives will further have to meet the requirements and have the necessary properties to be used as a connection element, e.g. a solder connection. Such alternatives would have to be compatible for use on various surfaces, e.g. on lead frames or on chip back sides. They would also have to be electrically and thermally conductive, and robust and reliable enough for their application, e.g. being subjected to high temperatures or varying temperature loads.
  • A further technical requirement is that the solidus temperature of the solder material should lie above 260° C., so that the solder material will not melt and/or soften when subsequent processes are carried out, e.g. when soldering the printer circuit board. Further requirements of alternative solder materials are that they meet the requirements of ductility such that solder wires may be provided from the solder materials.
  • Up until now, the semiconductor field has not had a lead-free soft solder alternative for the connection of a chip to a lead frame, or from a clip to a bond pad, which may be achieved in mass production. The technical challenge lies in finding a lead-free solder which has a melting temperature over that of the solder material used in printed circuit boards e.g. Sn—Ag—Cu systems, with typical melting temperatures of 260° C. However, the melting temperature should not be too high either, as high mechanical stress would have to be installed in the system to cool down and at the same time, solidify the solder.
  • A lead-free solder material, apart from the melting temperature requirements, should have good wettability with various metallic surfaces e.g. chip surfaces or lead frames which may be used, to ensure that an optimal connection is provided. The solder material should further possess a certain ductility so that it can be produced and handled in wire form. That is, the solder material in wire form should not be brittle. The solder material has to withstand repetitive melting and solidification conditions, and mechanical and thermomechanical loads which may be applied to the material, without succumbing to degradation.
    • SUMMARY
  • In some aspects, a chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.
  • In some aspects, a chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating, wherein the plating includes at least one of nickel or nickel-phosphorous; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 20% aluminum, 1% to 20% magnesium, wherein a balance of the zinc-based solder alloy is zinc.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various aspects of the invention are described with reference to the following drawings, in which:
  • FIG. 1 shows a graph representing thermal conductivity (W/mK) vs. electrical conductivity (106 S/m) of solder alloys;
  • FIG. 2 shows a phase diagram 200 of an Al—Zn alloy;
  • FIG. 3 shows a phase diagram 300 of a Ga—Zn alloy;
  • FIG. 4 shows a phase diagram 400 of a Sn—Zn alloy;
  • FIG. 5 shows a phase diagram 500 of a Ag—Zn alloy;
  • FIG. 6 shows a phase diagram 600 of a Cu—Zn alloy;
  • FIG. 7 shows a phase diagram 700 of a Ni—Zn alloy;
  • FIG. 8 shows a method for attaching a chip to a carrier according to various aspects;
  • FIGS. 9A and 9B show an arrangement for attaching a chip to a carrier according to various aspects;
  • FIGS. 10A to 10C show an arrangement including a solder alloy applied to a carrier according to various aspects;
  • FIGS. 11A and 11B show images of an arrangement including a solder alloy according to various aspects;
  • FIGS. 12 to 14 show differential scanning calorimetry plots of a solder alloy according to various aspects.
  • FIG. 15 shows a plot of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and magnesium.
  • FIG. 16 shows a plot of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and germanium.
    •  DETAILED DESCRIPTION
  • The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and aspects in which the invention may be practiced. The word “exemplary” is used herein to mean “serving as an example, instance, or illustration”. Any aspect or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects or designs.
  • Various aspects provide a lead-free (Pb-free) multilayer solder connection system for electronic components, including at least one side of a chip, a solder connection, e.g. a solder alloy, a carrier, e.g. a lead frame, and a plating, e.g. a lead frame plating, formed over the carrier.
  • In comparison to lead-based solders, zinc-based solder systems have better physical characteristics, e.g. better thermal/heat and electrical conductivity. This can be seen from FIG. 1 wherein a plot 100 illustrating thermal conductivity (W/mK) versus electrical conductivity (106 S/m) is shown. Pure zinc, and a zinc alloy including aluminum and germanium are shown from measurements and from calculations to have higher thermal conductivity and electrical conductivity compared to lead-based and tin-based solders.
  • FIG. 2 shows a phase diagram 200 of an Al—Zn binary alloy. With an atomic composition of 87.5% zinc and 12.5% aluminum, the Al—Zn binary alloy may achieve a melting point of approximately 650° C.
  • FIG. 3 shows a phase diagram 300 of a Ga—Zn binary alloy. With an atomic composition of 2.5% zinc and 87.5% gallium, the Ga—Zn binary alloy may achieve a melting point of approximately 300° C.
  • FIG. 4 shows a phase diagram 400 of a Sn—Zn binary alloy. At approximately 475° C., formed with an atomic composition of 13% zinc and 87% tin, the Sn—Zn binary alloy may achieve a melting point of approximately 475° C.
  • FIG. 5 shows a phase diagram 500 of a Ag—Zn binary alloy. With an atomic composition of 98% zinc and 2% silver, the Ag—Zn binary alloy may achieve a melting point of approximately 700° C.
  • FIG. 6 shows a phase diagram 600 of a Cu—Zn binary alloy. With an atomic composition of approximately 2% copper and 98% zinc, the Cu—Zn binary alloy may achieve a melting point of approximately 425° C. Table 606 shows the different phases with related alloy concentrations of the Cu—Zn binary alloy.
  • FIG. 7 shows a phase diagram 700 of a Ni—Zn binary alloy. With an atomic composition of approximately 1% nickel and 99% zinc, the Ni—Zn binary alloy may achieve a melting point of approximately 700° C. Table 706 shows the different phases with related alloy concentrations of the Ni—Zn binary alloy.
  • FIG. 8 shows a method for attaching and/or joining a chip 814 to a carrier. The method may include, in 800, selecting carrier, 802 e.g. a substrate or a lead frame; in 804, forming plating 806, e.g. a nickel plating, over carrier 802; in 808, depositing solder alloy 810 over carrier 802, wherein solder alloy 810 may be formed directly on plating 806. In 808, depositing solder alloy 810 may be carried out according to a conventional wire bond process by melting solder alloy 810 which may be in wire and a soft solder, over carrier 802, e.g. by forming a solder dot from solder alloy 810. Solder alloy 810 may be deposited in ribbon form or plated over carrier 802. Alternatively, solder alloy 810 may be placed over or directly on chip 814 at wafer level, i.e. before dicing of the wafer or on chip backside 820 wherein the chip back side may include chip back side metallization 816. In 812, chip 814 may be attached to carrier 802 via solder alloy 810, wherein solder alloy 810 may be a connecting or joining material between chip 814 and carrier 802. In 822, a further solder alloy 828 may be configured to attach a clip-on connection to a contact surface on a chip front side 830 by depositing solder alloy 810 over one or more contact pads 818 on the chip front side 830. One or more contact wires 824 may be attached to chip 814 and/or contact pads 818 via solder alloy 828. The deposition and placement of solder alloys 810, and further solder alloy 828 may be carried out by dispensing a paste of said alloys and/or through a plasma gun.
  • Solder alloy 810 may be used for joining chip back side 820 to carrier 802, e.g. a lead frame, even if chip 814 is not a silicon-based chip. Chip back side 820 may include a backside metallization 816 system including a multilayer system or part or a variant of a multilayer system. The multilayer system may include individual layers having individual functions.
  • The multilayer system may include contact layer 816 a for contacting to a semiconductor material, e.g. an aluminum contact layer, wherein the aluminum forms a layer having a thickness ranging from 50 nm to 1000 nm.
  • The multilayer system may include barrier layer 816 b, e.g. a titanium (Ti) or titanium-tungsten (TiW) barrier layer, wherein barrier layer 816 b may have a thickness ranging from 50 nm to 1000 nm.
  • The multilayer system may include solder reaction layer 816 c, the solder reaction layer 816 c including at least one of a group of the following elements and/or alloys thereof: nickel, nickel-vanadium, silver, aluminum, gold, platinum, palladium, nickel, wherein the solder reaction layer 816 c may have a thickness ranging from 50 nm to 1000 nm. Solder reaction layer 816 c may be a “partner” layer with solder alloy 810 as the thickness of solder reaction layer 816 c may be selected so that during the solder process it does not dissolve completely in solder alloy 810.
  • The multilayer system may include oxidation protection layer 816 d to prevent oxidation of the solder reaction layer 816 c as solder reaction layers 816 c including silver, gold, platinum, palladium or alloys thereof, may be prone to oxidation. Oxidation protection layer 816 d may have a thickness ranging from 50 nm to 1000 nm.
  • Substrate 802 may be formed from one of the following group of materials: copper, nickel, silver or a ceramic. Plating 806 may be formed over substrate 802, e.g. substrate 802 may be a lead frame wherein lead frame plating may be formed over the lead frame. Plating 806 may include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination. Plating 806 may be configured to be in connection with solder alloy 810.
  • According to various aspects, substrate 802 may include plating 806 including copper in combination with nickel and/or nickel phosphorus, wherein plating 806 may be a lead frame plating configured to be in connection with the solder alloy. According to various aspects, plating 806 thickness may lie in the range from about 100 nm to about 3 μm.
  • According to various aspects, chip 814 may include chip back side 820 including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver, wherein chip back side 820 may be configured to be in connection with solder alloy 810.
  • Solder alloy 810A according to various aspects may include zinc, aluminum, magnesium and gallium, wherein aluminum constitutes by weight 8% to 20% of alloy 810A, magnesium constitutes by weight 0.5% to 20% of alloy 810A and gallium constitutes by weight 0.5% to 20% of alloy 810A, the rest of alloy 810A including zinc. Solder alloy 810A may be represented by the chemical formula ZnAl4.5Ga1Mg1. Solder alloy 810A may be represented by the chemical formula ZnAl12Ga1Mg1. According to various aspects, solder alloy 810A may be a solder wire. Aluminum may constitute by weight 3% to 12% of alloy 810A. Magnesium may constitute by weight 0.5% to 4% of alloy 810A. Gallium may constitute by weight 0.5% to 4% of alloy 810A.
  • Solder alloy 810B according to various aspects may include zinc, aluminum, tin and magnesium, wherein aluminum constitutes by weight 1% to 30% of alloy 810B, magnesium constitutes by weight 0.5% to 20% of alloy 810B and tin constitutes by weight 0.5% to 6.5% of alloy 810B, the rest of alloy 810B including zinc. Aluminum may constitute by weight 3% to 8% of alloy 810B. Magnesium may constitute by weight 0.5% to 4% of alloy 810B. Tin may constitute by weight 0.5% to 4% of alloy 810B. Solder alloy 810B may be represented by the chemical formula ZnAl4Sn2Mg1.
  • Solder alloy 810C according to various aspects may include zinc, aluminum, germanium and gallium, wherein aluminum constitutes by weight 1% to 30% of alloy 810C, germanium constitutes by weight 0.5% to 20% of alloy 810C and gallium constitutes by weight 0.5% to 20% of alloy 810C, the rest of alloy 810C including zinc. Aluminum may constitute by weight 3% to 8% of alloy 810C. Germanium may constitute by weight 0.5% to 4% of alloy 810C. Gallium may constitute by weight 0.5% to 4% of alloy 810C.
  • Solder alloy 810D according to various aspects may include zinc, aluminum and germanium, wherein aluminum constitutes by weight 1% to 20% of alloy 810D, germanium constitutes by weight 1% to 20% of alloy 810D, the rest of alloy 810D including zinc. Solder alloy 810D may be represented by the chemical formula ZnAl5Ge3. Solder alloy 810D may be represented by the chemical formula ZnAl12Ge3. Solder alloy 810D may be represented by the chemical formula ZnAl6Ge3. Solder alloy may be represented by the chemical formula ZnAl6Ge5. According to various aspects, aluminum may constitute by weight 3% to 8% of alloy 810D. According to various aspects, germanium may constitute by weight 1% to 6% of alloy 810D.
  • Solder alloy 810E according to various aspects, may include zinc, aluminum and magnesium, wherein aluminum constitutes by weight 1% to 20% of alloy 810E, magnesium constitutes by weight 1% to 20% of alloy 810E, the rest of alloy 810E including zinc. Aluminum may constitute by weight 3% to 8% of alloy 810E. Magnesium may constitute by weight 0.5% to 4% of alloy 810E.
  • Solder alloy 810F according to various aspects may include zinc and tin, wherein zinc constitutes by weight 10% to 91% of alloy 810F. Solder alloy 810F may be represented by the chemical formula Zn40Sn60. Zinc may constitute by weight 10% to 15% of alloy 810F.
  • Solder alloy 810G according to various aspects may include zinc and silver, wherein zinc constitutes by weight 26% to 98% of alloy 810G. Zinc may constitute by weight 83% to 99% of alloy 810G.
  • Solder alloy 810H according to various aspects may include zinc and copper, wherein zinc constitutes by weight 80% to 98% of alloy 810H. Zinc may constitute by weight 88% to 99% of alloy 810H.
  • According to an aspect, each of solder alloys 810A to 810H may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of alloys 810A to 810H.
  • FIG. 9A shows arrangements 930, 932 and 934 according to various aspects. Arrangement 930 shows solder alloy 810, e.g. solder alloy 810D deposited on carrier 802, e.g. a lead frame, before attaching chip 814 to carrier 802. Arrangement 932 shows an ultrasonic plot of said arrangement 930 after attaching chip 814 using a chip attachment process to said solder alloy 810, e.g. solder alloy 810D, e.g. solder alloy 810D having a chemical formula ZnAl5Ge3. Arrangement 934 shows an ultrasonic plot according to arrangement 932 wherein solder alloy 810 has a chemical formula ZnAl12Ge3.
  • FIG. 9B shows arrangements 936, 938 and 940 according to various aspects. Arrangement 936 shows an ultrasonic plot of solder alloy 810, e.g. solder alloy 810A on carrier 802, e.g. a lead frame, after attaching chip 814 using a chip attachment process to said solder alloy 810, e.g. solder alloy 810A having a chemical formula ZnAl4.5Ga1Mg1. Arrangement 938 shows an ultrasonic plot according to arrangement 936, wherein solder alloy 810 has a chemical ZnAl12Ga1Mg1. White colored spots in the ultrasonic plots are indicating delamination or voids whereas black areas are directly connected homogenous solder areas.
  • FIG. 10A shows an arrangement 1030 wherein solder alloy 810, e.g. solder alloy 810A, including zinc, aluminum, magnesium and gallium may be applied to a carrier 802, e.g. a lead frame, wherein the lead frame includes lead frame plating 806 including NiNiP. FIG. 10B shows an arrangement 1032 which shows various aspects according to arrangement 1030 wherein lead frame plating 806 includes copper instead of NiNiP. Solder alloy 810A shows good wetting behavior on both copper surfaces and NiNiP surfaces of carrier 802, providing the best performances in terms of homogeneity of the solder alloy 810A on the surface of lead frame plating 806. FIG. 10C shows arrangements 1034 and 1036 according to various aspects. Arrangement 1034 shows an image of the interface between carrier 802, e.g. a lead frame, and solder alloy 810A. Arrangement 1036 shows an image of the interface between carrier 802, e.g. a lead frame, solder alloy 810A, and chip 814. In each of 1034 and 1036, two chips 814 are attached to leadframe 802. The white spots insides the chip areas 814 may be attributed to delaminations or voids. The void rate obtained in solder alloy 810A on plating 806, e.g. lead frame plating including NiNiP is less compared to that of a plating 806 including a Cu lead frame plating.
  • FIG. 11A shows a scanning electron microscopy (SEM) image 1130 of a cross section of a solder alloy 810A having a chemical formula ZnAl12Ga1Mg1 deposited on carrier 802 e.g. a copper lead frame, and solder alloy 810A joined to chip back side 820. Chip back side 820 may include chip back side metallization 816 wherein back side metallization 816 may include an Al—Ti—Ag stack. Back side metallization 816 may include contact layer 816 a, e.g. aluminum contact layer; barrier layer 816 b, e.g. titanium barrier layer; and solder reaction layer 816 c, e.g. silver solder reaction layer.
  • FIG. 11B shows image 1132 wherein marked portions of SEM image 1130 are provided, from which Energy Dispersive X-ray Spectroscopy (EDX) data may be extracted. Spectrum 2 1134 includes zinc, copper and aluminum. Spectrum 3 1136 includes zinc, copper, aluminum and silver. Spectrum 4 1138 includes zinc, copper, silver and trace amounts (less than 2%) of aluminum. Spectrum 5 1140 includes zinc, aluminum, copper and trace amounts (less than 2%) of silver. Spectrum 6 1142 includes zinc, aluminum and trace amounts (less than 2%) of silver. The silver diffuses from solder reaction layer 816 c into solder alloy 810A. Gallium may be detected between the grain boundaries, which improves the mechanical properties of the solder, the tensile strength of 345 MPa of solder alloy 810A having a chemical formula ZnAl12Ga1Mg1 may be attained. Copper diffusion from the leadframe into all bright visible parts of the cross-section is detected.
  • FIG. 12 shows differential scanning calorimetry plots (DSC) 1230, 1236 of solder alloy 810A. DSC plot 1230 shows Heat flow (W/g) 1232 versus Temperature (° C.) 1234 with respect to solder alloy 810A having chemical formula ZnAl4.5Ga1Mg1 according to an aspect. Solder alloy 810A shows exothermic peaks at approximately 262° C., 340° C. and 366° C. The peak representing an enthalpy of 9.0 J/g and peak temperature 261.8° C. reflects an eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g., Ga, Mg. The further peaks reflect the melting temperature range and is of importance for the setting of the process parameters. The occurrence of 2 or more peaks at specific positions are characteristic of a specific composition of the alloy with specific phases formed during the manufacturing process of the wires.
  • DSC plot 1236 shows Heat flow (W/g) 1238 versus Temperature (° C.) 1240 with respect to solder alloy 810A having chemical formula ZnAl12Ga1Mg1 according to an aspect. Solder alloy 810A shows exothermic peaks at approximately 273° C., 344° C. Thus, a melting point of approximately 344° C. may be attained in solder alloy 810A having chemical formula ZnAl12Ga1Mg1. The peak representing an enthalpy of 24.4 J/g and peak temperature 272.6° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ga, Mg.
  • FIG. 13 shows DSC plot 1330 showing Heat flow (W/g) 1332 versus Temperature (° C.) 1334 with respect to solder alloy 810B having chemical formula ZnAl4Sn2Mg1 according to various aspects. Solder alloy 810B shows exothermic peaks at approximately 284° C., 336° C. and 365° C. The peak representing an enthalpy of 9.0 J/g and peak temperature 284.4° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Sn, Mg.
  • FIG. 14 shows differential scanning calorimetry plots (DSC) 1430, 1436 of solder alloy 810D. DSC plot 1430 shows Heat flow (W/g) 1432 versus Temperature (° C.) 1434 with respect to solder alloy 810D having chemical formula ZnAl5Ge3 according to various aspects. Solder alloy 810D shows exothermic peaks at approximately 283° C. and 359° C. The peak representing an enthalpy of 8.6 J/g and peak temperature 282.8° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ge.
  • DSC plot 1436 shows Heat flow (W/g) 1438 versus Temperature (° C.) 1440 with respect to solder alloy 810D having chemical formula ZnAl12Ge3 according to various aspects. Solder alloy 810D shows exothermic peaks at approximately 283° C., 359° C., 368° C. and 412° C. The peak representing an enthalpy of 24.4 J/g and peak temperature 282.8° C. reflects a eutectoid reaction between zinc and aluminum. Any further peaks at higher temperatures are created by ternary reactions of Zn—Al with a further alloy element of the alloy, e.g. Ge.
  • FIG. 15 shows a plot 1500 of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and magnesium. According to various aspect, a lowest achievable melting temperature for the solder alloy of approximately 350° C. may be attainable at an atomic zinc composition of between approximately 91% to 96%. Axis 1532 indicates the molar fraction of aluminum relative to zinc. Axis 1534 indicates the molar fraction of zinc relative to magnesium. Axis 1536 indicates the molar fraction of magnesium relative to aluminum. The quaternary solder compositions 810B (ZnAl4Sn2Mg1) and 810A (ZnAl5Mg1Ga1) could be placed slightly above the horizontal 400° C. line of the diagram in FIG. 15 since the low concentrations of tin for 810B and gallium for 810A will not change significantly the liquidus temperatures of the solders 810B and 810A.
  • FIG. 16 shows a plot 1600 of experimental solder composition versus theoretical liquid phase projection for a solder alloy including zinc, aluminum and germanium. Axis 1632 indicates the molar fraction of aluminum relative to zinc. Axis 1634 indicates the molar fraction of zinc relative to germanium. Axis 1636 indicates the molar fraction of germanium relative to aluminum. Plot 1638 shows a magnified portion of selected portion 1640, wherein a lowest achievable melting temperature for the solder alloy of approximately 335° C. may be attainable at an atomic composition of 97 Zn %, 1.5 Al % and 1.5 Ge %. Solder alloy 810 having the chemical formula ZnAl12Ge3 and ZnAl5Ge3 are points indicated on plot 1600 and 1638. With an atomic composition of 1.6% aluminum, 80% zinc and 3.4% germanium, a four-phase intersection may be obtained. A melting temperature of 343.42° C. may further be obtained.
  • In various aspects, a solder alloy is provided. The solder alloy may include zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc. In various aspects, the solder alloy may be represented by the chemical formula ZnAl4.5Ga1Mg1. In various aspects, the solder alloy may be represented by the chemical formula ZnAl12Ga1Mg1. In various aspects, the solder alloy may be a solder wire. In various aspects, the aluminum may constitute by weight 3% to 12% of the alloy. In various aspects, the magnesium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the gallium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • In various aspects, a solder alloy is provided. The solder alloy may include zinc, aluminum, tin and magnesium, wherein the aluminum constitutes by weight 1% to 30% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the tin constitutes by weight 0.5% to 6.5% of the alloy, the rest of the alloy including zinc. In various aspects, the aluminum may constitute by weight 3% to 8% of the alloy. In various aspects, the magnesium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the tin may constitute by weight 0.5% to 4% of the alloy. In various aspects, the solder alloy may be represented by the chemical formula ZnAl4Sn2Mg1. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • In various aspects, a solder alloy is provided. The solder alloy may include zinc, aluminum, germanium and gallium, wherein the aluminum constitutes by weight 1% to 30% of the alloy, the germanium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc. In various aspects, the aluminum may constitute by weight 3% to 8% of the alloy. In various aspects, the germanium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the gallium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy.
  • In various aspects, an arrangement is provided. The arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including: zinc, aluminum and germanium, wherein the aluminum constitutes by weight 1% to 20% of the alloy, the germanium constitutes by weight 1% to 20% of the alloy, the rest of the alloy including zinc. In various aspects, the solder alloy may be represented by the chemical formula ZnAl5Ge3. In various aspects, the solder alloy may be represented by the chemical formula ZnAl12Ge3. In various aspects, the solder alloy is represented by the chemical formula ZnAl6Ge3. In various aspects, the solder alloy may be represented by the chemical formula ZnAl6Ge5. In various aspects, the aluminum may constitute by weight 3% to 8% of the alloy. In various aspects, the germanium may constitute by weight 1% to 6% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy. In various aspects, the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame plating thickness lies between 100 nm to 3 μm. In various aspects, the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver, wherein the chip back side is configured to be in connection with the solder alloy.
  • In various aspects, an arrangement is provided. The arrangement may include a chip; a solder alloy for attaching the chip to a lead frame; the solder alloy including zinc, aluminum and magnesium, wherein the aluminum constitutes by weight 1% to 20% of the alloy, the magnesium constitutes by weight 1% to 20% of the alloy, the rest of the alloy including zinc. In various aspects, the aluminum may constitute by weight 3% to 8% of the alloy. In various aspects, the magnesium may constitute by weight 0.5% to 4% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy. In various aspects, the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame plating thickness lies between 100 nm to 3 μm. In various aspects, the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • In various aspects, an arrangement is provided. The arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and tin, wherein the zinc constitutes by weight 10% to 91% of the alloy. In various aspects, the solder alloy may be represented by the chemical formula Zn40Sn60. In various aspects, the zinc may constitute by weight 10% to 15% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy. In various aspects, the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame plating thickness lies between 100 nm to 3 μm. In various aspects, the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • In various aspects, an arrangement is provided. The arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and silver, wherein the zinc constitutes by weight 26% to 98% of the alloy. In various aspects, the zinc may constitute by weight 83% to 99% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy. In various aspects, the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame plating thickness lies between 100 nm to 3 nm. In various aspects, the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • In various aspects, an arrangement is provided. The arrangement may include a chip; a solder alloy configured to attach the chip to a lead frame; the solder alloy including zinc and copper, wherein the zinc constitutes by weight 80% to 98% of the alloy. In various aspects, the zinc may constitute by weight 88% to 99% of the alloy. In various aspects, the alloy may further include at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, each and/or in combination including by weight 0.001% to 10% of the alloy. In various aspects, the lead frame may include a lead frame plating including at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, zinc, aluminum, niobium, tantalum, phosphorus, silver, nickel, nickel phosphorus in elemental form and/or in nitride form and/or in oxide form, the at least one from said group of materials, individually, or in combination including the lead frame plating; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame may include a lead frame plating including copper in combination with nickel and/or nickel phosphorus; wherein the lead frame plating is configured to be in connection with the solder alloy. In various aspects, the lead frame plating thickness lies between 100 nm to 3 μm. In various aspects, the chip may include a chip back side including at least one from the following group of materials: aluminum, titanium, nickel vanadium, silver; wherein the chip back side is configured to be in connection with the solder alloy.
  • While the invention has been particularly shown and described with reference to specific aspects, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.

Claims (20)

What is claimed is:
1. A chip arrangement comprising:
a chip comprising a chip back side;
a substrate comprising a surface with a plating; and
a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy comprising, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.
2. The chip arrangement of claim 1, wherein the zinc-based solder alloy comprises by weight 3% to 8% aluminum.
3. The chip arrangement of claim 1, wherein the zinc-based solder alloy comprises by weight 0.5% to 4% germanium.
4. The chip arrangement of claim 1, wherein the zinc-based solder alloy comprises by weight 0.5% to 4% gallium.
5. The chip arrangement of claim 1, wherein the zinc-based solder alloy further comprises at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, niobium, tantalum, and/or any combination thereof, by weight 0.001% to 10% of the zinc-based solder alloy.
6. The chip arrangement of claim 1, wherein the plating comprises at least one of nickel or nickel-phosphorous.
7. The chip arrangement of claim 6, wherein the substrate comprises one or more of copper, nickel, silver, or ceramic.
8. The chip arrangement of claim 7, wherein the at least one of nickel or nickel-phosphorous in the plating provides a reduced void rate at an interface with the zinc-based solder alloy as compared to a void rate of the zinc-based solder alloy on the substrate without the plating.
9. The chip arrangement of claim 1, wherein the chip back side comprises a back side metallization comprising a plurality of layers, wherein a first layer of the plurality of layers is a contact layer which contacts a semiconductor material of the chip back side.
10. The chip arrangement of claim 9, wherein the contact layer comprises aluminum and has a thickness ranging from 50 nm to 1000 nm.
11. The chip arrangement of claim 9, wherein a second layer of the plurality of layers is a barrier layer comprising titanium or titanium-tungsten and has a thickness ranging from 50 nm to 1000 nm.
12. The chip arrangement of claim 11, wherein a third layer of the plurality of layers is a solder reaction layer comprising at least one of nickel, nickel-vanadium, silver, aluminum, gold, platinum, palladium, nickel, or combinations thereof, and has a thickness ranging from 50 nm to 1000 nm.
13. The chip arrangement of claim 12, wherein a fourth layer of the plurality of layers is an oxidation protection layer with a thickness ranging from 50 nm to 1000 nm.
14. A chip arrangement comprising:
a chip comprising a chip back side;
a substrate comprising a surface with a plating, wherein the plating comprises at least one of nickel or nickel-phosphorous; and
a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy comprising, by weight, 1% to 20% aluminum, 1% to 20% magnesium, wherein a balance of the zinc-based solder alloy is zinc.
15. The chip arrangement of claim 14, wherein the zinc-based solder alloy comprises by weight 3% to 8% aluminum.
16. The chip arrangement of claim 14, wherein the zinc-based solder alloy comprises by weight 0.5% to 4% magnesium.
17. The chip arrangement of claim 14, wherein the zinc-based solder alloy further comprises at least one from the following group of materials: silver, gold, nickel, platinum, palladium, vanadium, molybdenum, tin, copper, arsenic, antimony, gallium, niobium, tantalum, and/or any combination thereof, by weight 0.001% to 10% of the zinc-based solder alloy.
18. The chip arrangement of claim 14, wherein the at least one of nickel or nickel-phosphorous in the plating provides a reduced void rate at an interface with the zinc-based solder alloy as compared to a void rate of the zinc-based solder alloy on the substrate without the plating.
19. The chip arrangement of claim 18, wherein the substrate comprises one or more of copper, nickel, silver, or ceramic.
20. The chip arrangement of claim 19, wherein the substrate comprises copper.
US17/149,741 2011-06-07 2021-01-15 Chip arrangements Abandoned US20210167034A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/149,741 US20210167034A1 (en) 2011-06-07 2021-01-15 Chip arrangements

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/154,523 US9735126B2 (en) 2011-06-07 2011-06-07 Solder alloys and arrangements
US15/659,670 US10930614B2 (en) 2011-06-07 2017-07-26 Chip arrangements
US17/149,741 US20210167034A1 (en) 2011-06-07 2021-01-15 Chip arrangements

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US15/659,670 Continuation US10930614B2 (en) 2011-06-07 2017-07-26 Chip arrangements

Publications (1)

Publication Number Publication Date
US20210167034A1 true US20210167034A1 (en) 2021-06-03

Family

ID=47220696

Family Applications (3)

Application Number Title Priority Date Filing Date
US13/154,523 Active US9735126B2 (en) 2011-06-07 2011-06-07 Solder alloys and arrangements
US15/659,670 Active 2031-09-11 US10930614B2 (en) 2011-06-07 2017-07-26 Chip arrangements
US17/149,741 Abandoned US20210167034A1 (en) 2011-06-07 2021-01-15 Chip arrangements

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US13/154,523 Active US9735126B2 (en) 2011-06-07 2011-06-07 Solder alloys and arrangements
US15/659,670 Active 2031-09-11 US10930614B2 (en) 2011-06-07 2017-07-26 Chip arrangements

Country Status (3)

Country Link
US (3) US9735126B2 (en)
CN (1) CN102814596A (en)
DE (1) DE102012104948A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
US20130045131A1 (en) * 2011-08-17 2013-02-21 Honeywell International Inc. Lead-Free Solder Compositions
US9006899B2 (en) * 2012-12-14 2015-04-14 Infineon Technologies Ag Layer stack
MY181753A (en) * 2013-05-03 2021-01-06 Honeywell Int Inc Lead frame construct for lead-free solder connections
CN105324209A (en) * 2013-06-20 2016-02-10 三菱电机株式会社 Zn-based lead-free solder and semiconductor power module
US20150151387A1 (en) * 2013-12-04 2015-06-04 Honeywell International Inc. Zinc-based lead-free solder compositions
KR20160121562A (en) 2014-02-20 2016-10-19 허니웰 인터내셔날 인코포레이티드 Lead-free solder compositions
TWI561639B (en) 2014-04-17 2016-12-11 Heraeus Materials Singapore Pte Ltd Lead-free eutectic solder alloy comprising zinc as the main component and aluminum as an alloying metal
DE102015104570B4 (en) 2015-03-26 2019-07-11 Infineon Technologies Ag POWER CHIP AND CHIP ASSEMBLY
US9683278B2 (en) 2015-06-08 2017-06-20 Infineon Technologies Ag Diffusion solder bonding using solder preforms
DE102015122259B4 (en) * 2015-12-18 2020-12-24 Infineon Technologies Austria Ag Semiconductor devices having a porous insulating layer
US10711330B2 (en) * 2017-10-24 2020-07-14 GM Global Technology Operations LLC Corrosion-resistant magnesium-aluminum alloys including germanium
WO2019200515A1 (en) * 2018-04-16 2019-10-24 华为技术有限公司 Chip, chip package structure, and packaging method
DE102018123924A1 (en) * 2018-09-27 2020-04-02 Infineon Technologies Ag A semiconductor device with a solder joint having a Sn / Sb connection
CN109516830A (en) * 2018-11-15 2019-03-26 贵州天义电器有限责任公司 Ceramics and seat board, binding post soldering connection technique in a kind of high pressure sealing contactor
TWI726313B (en) * 2019-04-30 2021-05-01 作同 柯 Power semiconductor
WO2020241317A1 (en) 2019-05-27 2020-12-03 千住金属工業株式会社 Solder alloy, solder paste, solder ball, solder preform, solder joint, and substrate
CN111545948B (en) * 2020-05-18 2021-12-07 河南机电职业学院 Brazing alloy, brazing filler metal, preparation method and application of brazing filler metal and prepared brazing product
CN114406518B (en) * 2022-01-11 2023-08-01 金华市双环钎焊材料有限公司 Transition layer welding wire for preparing aluminum-steel composite structure and preparation and arc surfacing method

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268072A (en) * 1992-08-31 1993-12-07 International Business Machines Corporation Etching processes for avoiding edge stress in semiconductor chip solder bumps
US6241942B1 (en) * 1995-09-29 2001-06-05 Matsushita Electric Industrial Co., Ltd. Lead-free solder alloys
WO2002009936A1 (en) * 2000-07-31 2002-02-07 Honeywell International Inc. Lead-free alloys with improved wetting properties
EP1250032A1 (en) * 2001-04-11 2002-10-16 Hitachi, Ltd. Electronic device using Zn-Al-Ge-Mg alloy solder having Al or Cu particles
US20060145352A1 (en) * 2002-03-08 2006-07-06 Hitachi, Ltd. Electronic device
WO2007023288A2 (en) * 2005-08-24 2007-03-01 Fry's Metals Inc. Solder alloy
US20070158391A1 (en) * 2006-01-12 2007-07-12 Yoon-Chul Son Method for joining electronic parts finished with nickel and electronic parts finished with electroless nickel
JP2007207558A (en) * 2006-02-01 2007-08-16 Nec Schott Components Corp Fusible alloy type thermal fuse and circuit protection element
JP3980658B2 (en) * 1993-04-29 2007-09-26 富士通株式会社 Thin film capacitor forming method, thin film capacitor manufacturing method, thin film bypass capacitor manufacturing method, and thin film capacitor
CN101092006A (en) * 2006-06-21 2007-12-26 北京有色金属研究总院 Lead-free solder for micro alloyed eutectic alloy of stannum and zinc
US20080122050A1 (en) * 2004-06-17 2008-05-29 Osamu Ikeda Semiconductor Device And Production Method For Semiconductor Device
US20090053555A1 (en) * 2006-03-20 2009-02-26 Koichi Nose High Corrosion Resistance Hot dip Galvanized Steel Material
JP2009285732A (en) * 2009-08-12 2009-12-10 Hitachi Ltd Bonding material, manufacturing method of bonding material and semiconductor device
DE102012104948A1 (en) * 2011-06-07 2012-12-13 Infineon Technologies Ag Solder alloys and arrangements
US8354754B2 (en) * 2009-08-18 2013-01-15 Semikron Elektronik Gmbh & Co., Kg Layered chip for use in soldering
US8356742B2 (en) * 2006-11-21 2013-01-22 Hitachi, Ltd. Method for manufacturing a semiconductor device using an Al-Zn connecting material
EP3077151B1 (en) * 2013-12-04 2019-02-20 Honeywell International Inc. Zinc-based lead-free and tin-free solder compositions

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758479A (en) * 1987-03-30 1988-07-19 General Motors Corporation Corrosion resistant nickel-zinc-phosphorus coating and method of electroplating said coating
DE69524912T2 (en) 1994-09-30 2002-08-22 At & T Corp Lead-free alloys for soft soldering
JP3387282B2 (en) * 1995-08-03 2003-03-17 日産自動車株式会社 Semiconductor device structure and method of manufacturing the same
US6194777B1 (en) * 1998-06-27 2001-02-27 Texas Instruments Incorporated Leadframes with selective palladium plating
JP3945915B2 (en) 1998-08-25 2007-07-18 住友金属鉱山株式会社 Zn alloy for solder
TW516984B (en) 1999-12-28 2003-01-11 Toshiba Corp Solder material, device using the same and manufacturing process thereof
JP2002203932A (en) * 2000-10-31 2002-07-19 Hitachi Ltd Heat radiation substrate for semiconductor power device and its conductor plate, heat sink material, and brazing material
US6840434B2 (en) 2002-04-09 2005-01-11 Ford Motor Company Tin-and zinc-based solder fillers for aluminum body parts and methods of applying the same
JP3509809B2 (en) * 2002-04-30 2004-03-22 住友電気工業株式会社 Submount and semiconductor device
CN1198078C (en) 2002-06-24 2005-04-20 卢景贵 Mixed integrated efficient full-colour LED lamp
EP1385199A1 (en) * 2002-07-24 2004-01-28 IMEC vzw, Interuniversitair Microelectronica Centrum vzw Method for making thin film devices intended for solar cells or SOI application
JP3878978B2 (en) 2002-10-24 2007-02-07 コーア株式会社 Lead-free solder and lead-free fittings
JP2004238720A (en) * 2003-02-10 2004-08-26 Kiyohito Ishida Shape memory alloy
US7335556B2 (en) * 2004-06-14 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE102005032544B4 (en) * 2004-07-14 2011-01-20 Hitachi Powdered Metals Co., Ltd., Matsudo Abrasion-resistant sintered aluminum alloy with high strength and Herstellungsugsverfahren this
JP2006140182A (en) * 2004-11-10 2006-06-01 Fuji Photo Film Co Ltd Organic electroluminescent element
CN101194361A (en) * 2005-06-15 2008-06-04 Nxp股份有限公司 Layer sequence and method of manufacturing a layer sequence
CZ2005659A3 (en) * 2005-10-19 2007-01-10 JenĂ­k@Jan Lead-free solder
DE102005052563B4 (en) 2005-11-02 2016-01-14 Infineon Technologies Ag Semiconductor chip, semiconductor device and method of making the same
JP4609296B2 (en) 2005-12-05 2011-01-12 株式会社日立製作所 High temperature solder, high temperature solder paste material, and power semiconductor device using the same
US7691679B2 (en) * 2007-03-23 2010-04-06 Asm Assembly Materials Ltd. Pre-plated leadframe having enhanced encapsulation adhesion
CN101060153A (en) 2007-05-15 2007-10-24 佛山市国星光电科技有限公司 A side LED and its manufacture process
US7833839B1 (en) * 2007-09-15 2010-11-16 Globalfoundries Inc. Method for decreasing surface delamination of gel-type thermal interface material by management of the material cure temperature
CN101425489A (en) 2007-10-31 2009-05-06 中国科学院金属研究所 Solder convex point connected metal layer in microelectronic package and use thereof
JP5160201B2 (en) 2007-11-20 2013-03-13 株式会社豊田中央研究所 Solder material and manufacturing method thereof, joined body and manufacturing method thereof, power semiconductor module and manufacturing method thereof
KR100930965B1 (en) 2008-01-17 2009-12-10 (주)아큐텍반도체기술 Method of manufacturing substrate for semiconductor package and metal plating layer manufactured using same
US8201326B2 (en) * 2008-12-23 2012-06-19 Infineon Technologies Ag Method of manufacturing a semiconductor device
JP5540780B2 (en) * 2009-05-29 2014-07-02 住友電気工業株式会社 Magnesium alloy wire, bolt, nut and washer
KR101361252B1 (en) * 2009-09-09 2014-02-11 가부시키가이샤 히타치세이사쿠쇼 Connecting material, semiconductor device and method for manufacturing semiconductor device
US8569897B2 (en) * 2009-09-14 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for preventing UBM layer from chemical attack and oxidation
EP2560197A4 (en) * 2010-03-19 2016-04-27 Furukawa Electric Co Ltd Conductive connecting member and manufacturing method of same
CN101902877A (en) 2010-06-08 2010-12-01 深圳市瑞丰光电子股份有限公司 PCB board, chip type LED and LED lighting device

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268072A (en) * 1992-08-31 1993-12-07 International Business Machines Corporation Etching processes for avoiding edge stress in semiconductor chip solder bumps
JP3980658B2 (en) * 1993-04-29 2007-09-26 富士通株式会社 Thin film capacitor forming method, thin film capacitor manufacturing method, thin film bypass capacitor manufacturing method, and thin film capacitor
US6241942B1 (en) * 1995-09-29 2001-06-05 Matsushita Electric Industrial Co., Ltd. Lead-free solder alloys
WO2002009936A1 (en) * 2000-07-31 2002-02-07 Honeywell International Inc. Lead-free alloys with improved wetting properties
EP1250032A1 (en) * 2001-04-11 2002-10-16 Hitachi, Ltd. Electronic device using Zn-Al-Ge-Mg alloy solder having Al or Cu particles
US20060145352A1 (en) * 2002-03-08 2006-07-06 Hitachi, Ltd. Electronic device
US20080122050A1 (en) * 2004-06-17 2008-05-29 Osamu Ikeda Semiconductor Device And Production Method For Semiconductor Device
WO2007023288A2 (en) * 2005-08-24 2007-03-01 Fry's Metals Inc. Solder alloy
US20070158391A1 (en) * 2006-01-12 2007-07-12 Yoon-Chul Son Method for joining electronic parts finished with nickel and electronic parts finished with electroless nickel
JP2007207558A (en) * 2006-02-01 2007-08-16 Nec Schott Components Corp Fusible alloy type thermal fuse and circuit protection element
US20090053555A1 (en) * 2006-03-20 2009-02-26 Koichi Nose High Corrosion Resistance Hot dip Galvanized Steel Material
CN101092006A (en) * 2006-06-21 2007-12-26 北京有色金属研究总院 Lead-free solder for micro alloyed eutectic alloy of stannum and zinc
US8356742B2 (en) * 2006-11-21 2013-01-22 Hitachi, Ltd. Method for manufacturing a semiconductor device using an Al-Zn connecting material
JP2009285732A (en) * 2009-08-12 2009-12-10 Hitachi Ltd Bonding material, manufacturing method of bonding material and semiconductor device
US8354754B2 (en) * 2009-08-18 2013-01-15 Semikron Elektronik Gmbh & Co., Kg Layered chip for use in soldering
DE102012104948A1 (en) * 2011-06-07 2012-12-13 Infineon Technologies Ag Solder alloys and arrangements
US20120313230A1 (en) * 2011-06-07 2012-12-13 Infineon Technologies Ag Solder alloys and arrangements
EP3077151B1 (en) * 2013-12-04 2019-02-20 Honeywell International Inc. Zinc-based lead-free and tin-free solder compositions

Also Published As

Publication number Publication date
CN102814596A (en) 2012-12-12
US10930614B2 (en) 2021-02-23
US20120313230A1 (en) 2012-12-13
DE102012104948A1 (en) 2012-12-13
US9735126B2 (en) 2017-08-15
US20170323865A1 (en) 2017-11-09

Similar Documents

Publication Publication Date Title
US20210167034A1 (en) Chip arrangements
US10504868B2 (en) Solder joining
US20060113683A1 (en) Doped alloys for electrical interconnects, methods of production and uses thereof
US9425168B2 (en) Stud bump and package structure thereof and method of manufacturing the same
US10157877B2 (en) Semiconductor device and manufacturing method of semiconductor device
US20080136019A1 (en) Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications
EP3077151B1 (en) Zinc-based lead-free and tin-free solder compositions
JP6700568B1 (en) Lead-free and antimony-free solder alloys, solder balls, ball grid arrays and solder joints
EP1429884B1 (en) Improved compositions, methods and devices for high temperature lead-free solder
TW200826266A (en) Modified solder alloys for electrical interconnects, methods of production and uses thereof
WO2018168858A1 (en) Solder material
JP5976379B2 (en) Electronic device and manufacturing method thereof
US20070138442A1 (en) Modified and doped solder alloys for electrical interconnects, methods of production and uses thereof
US20230126663A1 (en) Layer structure and chip package that includes the layer structure
JP2008080392A (en) Joining body and joining method
US20230095749A1 (en) Solder material, layer structure, chip package, method of forming a layer structure, and method of forming a chip package
TWI272152B (en) Doped alloys for electrical interconnects, methods of production and uses thereof
JP6887183B1 (en) Solder alloys and molded solders
US20220212293A1 (en) Lead-free solder alloy, solder paste comprising the same, and semiconductor device comprising the same
JP2017216308A (en) Solder joint and method for manufacturing the same
Sabri et al. High-Temperature Lead-free Solder Materials and Applications

Legal Events

Date Code Title Description
STPP Information on status: patent application and granting procedure in general

Free format text: APPLICATION DISPATCHED FROM PREEXAM, NOT YET DOCKETED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION