CN102312120A - Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof - Google Patents
Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof Download PDFInfo
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- CN102312120A CN102312120A CN201110255847.0A CN201110255847A CN102312120A CN 102312120 A CN102312120 A CN 102312120A CN 201110255847 A CN201110255847 A CN 201110255847A CN 102312120 A CN102312120 A CN 102312120A
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- alloy
- bonding wire
- electromigration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Abstract
The invention discloses an electromigration-resistant silver-indium alloy bonding wire. The electromigration-resistant silver-indium alloy bonding wire comprises: by weight, 96 to 97.5% of silver, 2 to 3% of indium and 0.5 to 1% of gold. Results of a mechanics test, an electric test and a micro-area composition analysis show that compared with a gold wire with a size same as a size of the the electromigration-resistant silver-indium alloy bonding wire, the electromigration-resistant silver-indium alloy bonding wire has better tensile strength, similar hardness and excellent electromigration-resistant properties.
Description
Technical field
The present invention relates to the manufacturing technology field of bonding wire line products, the particularly a kind of AI alloy of anti-electromigration bonding wire and preparation method thereof.
Background technology
The gold bonding wire is widely used in the lead packages of semicon industries such as photodiode, triode, IC; But the expensive price of gold bonding line brings heavy day by day cost pressure for the Electronic Packaging field, thereby corresponding equivalent material such as copper base, money base bonding line receive increasing concern and widespread use.
Present copper bonding line mainly is to adopt high purity copper (more than the 4N) to be raw material, and silver-colored bonding line also concentrates on high fine silver or the money base microalloy material, compares with the gold bonding line, and these novel bonding lines have huge cost advantage.
But the copper, the silver-colored bonding wire that replace the gold bonding line in use remain in some problems; Be mainly reflected in following aspect: the stability problem of (1) material; Gold line stable best; Decide all have satisfactory stability property in the process He in the use in nation, and the stability of copper, silver-colored bonding line is poor slightly, decides to adopt in the process protection of inert gas to solve the problem of the fixed stability of nation in nation; Because the chip after nation is fixed has adopted the further encapsulation of materials such as resin, so the stability problem in the use is not obvious; (2) difference of mechanical property, the copper of same size, the breaking tenacity of silver-colored bonding line are superior to the gold line, but hardness ratio gold line is big, decides process to nation and has brought difficulty.Bigger material hardness needs nation to decide to apply in the process bigger Bang Dingli, because LED and IC chip are more crisp, causes the risk of chip rupture to strengthen.
Usually, in material, add mechanical property such as breaking tenacity, the hardness etc. that alloying element can be regulated material, but concerning the electro-conductive material that is used for LED and IC encapsulation, have so-called " electromigration " effect.Electromigration effect is the mass transport phenomenon that under galvanic current and temperature action, produces in the metal, i.e. atomic migration in the metal.The migration of atoms metal causes regional area to be piled up by quality and hillock or article palpus occur, or the cavity occurs by mass deficit, causes device or interconnection performance degradation or inefficacy, and for example the electromigration of Al film is a main failure cause of silicon planar device.In copper, silver-colored bonding line, add alloying element and regulate its mechanical property; Maybe be because electromigration effect causes the generation and the dissolving of solder joint intermetallic compound; And the dissolving of the metal layer under the solder joint and consumption; Make atom that migration take place and produce hole, cause solder joint to destroy, shortened the solder joint mean time to failure, MTTF and bring integrity problem.
Summary of the invention
In order to overcome above-mentioned defective, the invention provides a kind of AI alloy of anti-electromigration bonding wire, this bonding wire has the tensile strength that is superior to same size gold line and approaching hardness and good anti-electric migration performance.
The present invention realizes through following technical scheme: a kind of AI alloy of anti-electromigration bonding wire, each composition weight percent of material of forming bonding wire is: wherein silver content is 96%～97.5%, and indium content is 2～3%, and gold content is 0.5～1%.
A kind of preparation method of the AI alloy of anti-electromigration bonding wire mainly may further comprise the steps:
A. the alloy raw material that adopts vacuum environment will form said bonding wire is put into induction furnace melting melting under 1100 ° of C;
B. the alloy continuous casting is become the AI alloy rod, its diameter is at 6～10mm;
C. above-mentioned AI alloy rod is drawn into the alloy bar that diameter is 1.5mm through big drawing machine, the AI alloy rod of this size is drawn into the AI alloy line that diameter is 0.15mm through drawing wire machine micro-computer controlled, AC servo machinery driving;
D. on temperature is 300 ℃ annealing after-combustion equipment, heat-treating, is that the AI alloy line of 0.15mm is processed the AI alloy bonding wire that diameter is 0.013～0.025mm through continuous drawing with diameter through the drawing wire machine of micro-computer controlled AC servo machinery driving again.
The invention has the beneficial effects as follows: (1) is compared with the gold bonding wire, and is cheap, is merely the 10-30% of gold nation fixed thread price.
(2) the AgIn alloy of melting can be drawn to 0.025mm-0.013mm superfine wire footpath, covers the various size of existing gold nation fixed thread fully.
(3) mechanical property of material: the AgIn alloy bonding silk of diameter 0.023mm, its breaking tenacity 70mN, unit elongation >=12% surpasses the performance of the gold nation fixed thread of same size, and is suitable with existing pure Cu, Ag bonding wire.But the hardness of material (Mohs) is by pure Cu, and the 2.5-3.0 of Ag drops to 2.3-2.4, and is suitable with the hardness of gold.Can adopt the nation of existing gold bonding wire to decide technology fully, thereby reduce pure Cu, the Ag bonding wire is decided process chips disruptive risk owing to material hardness increases the nation that brings.
(4) electric property: resistivity 1.8x10
-8Ω m near the resistivity of fine silver, is superior to Cu, gold bonding wire.At 12V volts DS, 3x10
3A/cm
2Current density under energising 5000 hours, adopt the electronic probe butt welding point to carry out the micro-area composition analysis, its composition does not have considerable change, shows that bonding line has good deelectric transferred performance.
Embodiment
In order to deepen to understanding of the present invention, will combine embodiment that the present invention is made further detailed description below, this embodiment only is used to explain the present invention, does not constitute the qualification to protection domain of the present invention.
The present invention has announced the embodiment of the AI alloy of anti-electromigration bonding wire:
Embodiment 1: a kind of AI alloy of anti-electromigration bonding wire, and each composition weight percent of material of forming bonding wire is: wherein silver content is 96%, and indium content is 3%, and gold content is 1%, and the purity of said silver is greater than 99.99%; Its preparation method mainly may further comprise the steps:
A. the alloy raw material that adopts vacuum environment will form said bonding wire is put into induction furnace melting melting under 1100 ° of C;
B. the alloy continuous casting is become the silver alloys rod, its diameter is at 6～10mm;
C. above-mentioned AI alloy rod is drawn into the alloy bar that diameter is 1.5mm through big drawing machine, the AI alloy rod of this size is drawn into the AI alloy line that diameter is 0.15mm through drawing wire machine micro-computer controlled, AC servo machinery driving;
D. on temperature is 300 ℃ annealing after-combustion equipment, heat-treating, is that the AI alloy line of 0.15mm is processed the AI alloy bonding wire that diameter is 0.013～0.025mm through continuous drawing with diameter through the drawing wire machine of micro-computer controlled AC servo machinery driving again.
Embodiment 2: a kind of AI alloy of anti-electromigration bonding wire, and each composition weight percent of material of forming bonding wire is: wherein silver content is 97.5%, and indium content is 2%, and gold content is 0.5%, and the purity of said silver is greater than 99.99%; Its preparation method mainly may further comprise the steps:
A. the alloy raw material that adopts vacuum environment will form said bonding wire is put into induction furnace melting melting under 1100 ° of C;
B. the alloy continuous casting is become the AI alloy rod, its diameter is at 6～10mm;
C. above-mentioned AI alloy rod is drawn into the alloy bar that diameter is 1.5mm through big drawing machine, the AI alloy rod of this size is drawn into the AI alloy line that diameter is 0.15mm through drawing wire machine micro-computer controlled, AC servo machinery driving;
D. on temperature is 300 ℃ annealing after-combustion equipment, heat-treating, is that the AI alloy line of 0.15mm is processed the AI alloy bonding wire that diameter is 0.013～0.025mm through continuous drawing with diameter through the drawing wire machine of micro-computer controlled AC servo machinery driving again.
With the AgIn bonding wire of the foregoing description preparation through Mechanics Performance Testing; The long-time high current density senile experiment after nation is fixed and the micro-area composition analysis of solder joint; Show that material has the tensile strength that is superior to same size gold line and approaching hardness, and good anti-electric migration performance.
Claims (2)
1. the AI alloy of anti-electromigration bonding wire is characterized in that: each composition weight percent of material of forming bonding wire is: wherein silver content is 96～97.5%, and indium content is 2～3%, and gold content is 0.5～1%.
2. the preparation method of the AI alloy of anti-an electromigration bonding wire is characterized in that: mainly may further comprise the steps:
A. the alloy raw material that adopts vacuum environment will form said bonding wire is put into induction furnace melting melting under 1100 ° of C;
B. the alloy continuous casting is become the AI alloy rod, its diameter is at 6～10mm;
C. above-mentioned AI alloy rod is drawn into the alloy bar that diameter is 1.5mm through big drawing machine, the AI alloy rod of this size is drawn into the AI alloy line that diameter is 0.15mm through drawing wire machine micro-computer controlled, AC servo machinery driving;
D. on temperature is 300 ℃ annealing after-combustion equipment, heat-treating, is that the AI alloy line of 0.15mm is processed the AI alloy bonding wire that diameter is 0.013～0.025mm through continuous drawing with diameter through the drawing wire machine of micro-computer controlled AC servo machinery driving again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255847.0A CN102312120A (en) | 2011-09-01 | 2011-09-01 | Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255847.0A CN102312120A (en) | 2011-09-01 | 2011-09-01 | Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof |
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| CN102312120A true CN102312120A (en) | 2012-01-11 |
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| CN201110255847.0A Pending CN102312120A (en) | 2011-09-01 | 2011-09-01 | Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614588A (en) * | 2013-11-19 | 2014-03-05 | 苏州衡业新材料科技有限公司 | Preparation method of silver/silver alloy microwire |
| DE102016103503A1 (en) | 2015-06-25 | 2016-12-29 | RayShine Photonics Corp. | Silver alloy material and manufacturing method therefor |
| CN106298720A (en) * | 2016-08-01 | 2017-01-04 | 江苏天康电子合成材料有限公司 | A kind of low-cost package bonding Silver alloy wire and preparation method thereof |
| EP2993693A4 (en) * | 2014-03-31 | 2017-01-04 | Nippon Micrometal Corporation | Bonding wire for use with semiconductor devices and method for manufacturing said bonding wire |
| US10381320B2 (en) | 2014-07-10 | 2019-08-13 | Nippon Steel Chemical & Material Co., Ltd. | Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium |
| TWI788732B (en) * | 2019-11-22 | 2023-01-01 | 日商日鐵化學材料股份有限公司 | Ag alloy bonding wire for semiconductor devices |
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| CN1339822A (en) * | 2000-08-23 | 2002-03-13 | 株式会社Acqutek半导体技术 | Base for producing semiconductor device by using three element alloy |
| JP2004002929A (en) * | 2001-08-03 | 2004-01-08 | Furuya Kinzoku:Kk | Silver alloy, sputtering target, reflector for reflection lcd, reflection wiring electrode, thin film, manufacturing method therefor, optical recording medium, electro magnetic wave shield, metal material for electronic part, wiring material, electronic part, electronic appliance, processing method of metal film, electron optical part, laminate, and glass of building material |
| JP2006070345A (en) * | 2004-09-03 | 2006-03-16 | Kobe Steel Ltd | Ag-BASED ALLOY WIRING ELECTRODE FILM AND Ag-BASE ALLOY SPUTTERING TARGET FOR FLAT PANEL DISPLAY, AND FLAT PANEL DISPLAY |
| CN101042946A (en) * | 2003-07-23 | 2007-09-26 | 夏普株式会社 | Silver alloy material, circuit board, electronic device and method of producing circuit board |
| CN101626005A (en) * | 2009-07-09 | 2010-01-13 | 烟台一诺电子材料有限公司 | Bonding filamentary silver and preparation method thereof |
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Patent Citations (5)
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| CN1339822A (en) * | 2000-08-23 | 2002-03-13 | 株式会社Acqutek半导体技术 | Base for producing semiconductor device by using three element alloy |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614588A (en) * | 2013-11-19 | 2014-03-05 | 苏州衡业新材料科技有限公司 | Preparation method of silver/silver alloy microwire |
| EP2993693A4 (en) * | 2014-03-31 | 2017-01-04 | Nippon Micrometal Corporation | Bonding wire for use with semiconductor devices and method for manufacturing said bonding wire |
| US10381320B2 (en) | 2014-07-10 | 2019-08-13 | Nippon Steel Chemical & Material Co., Ltd. | Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium |
| DE102016103503A1 (en) | 2015-06-25 | 2016-12-29 | RayShine Photonics Corp. | Silver alloy material and manufacturing method therefor |
| CN106298720A (en) * | 2016-08-01 | 2017-01-04 | 江苏天康电子合成材料有限公司 | A kind of low-cost package bonding Silver alloy wire and preparation method thereof |
| CN106298720B (en) * | 2016-08-01 | 2019-05-14 | 江苏天康电子合成材料有限公司 | A kind of encapsulation bonding Silver alloy wire and preparation method thereof |
| TWI788732B (en) * | 2019-11-22 | 2023-01-01 | 日商日鐵化學材料股份有限公司 | Ag alloy bonding wire for semiconductor devices |
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Application publication date: 20120111 |