CN110284023B - Copper alloy bonding wire and preparation method and application thereof - Google Patents

Copper alloy bonding wire and preparation method and application thereof Download PDF

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CN110284023B
CN110284023B CN201910661273.3A CN201910661273A CN110284023B CN 110284023 B CN110284023 B CN 110284023B CN 201910661273 A CN201910661273 A CN 201910661273A CN 110284023 B CN110284023 B CN 110284023B
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copper
wire
bonding
copper alloy
bonding wire
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CN110284023A (en
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何孔田
尹若磊
唐文静
钱萍
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Anhui Guangyu Electronic Material Co ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • C21D9/0075—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for rods of limited length
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H01L2224/48511—Heat affected zone [HAZ]
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/0103—Zinc [Zn]

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  • Wire Bonding (AREA)

Abstract

The invention provides a copper alloy bonding wire and a preparation method and application thereof, belonging to the technical field of semiconductor packaging materials, wherein the copper alloy bonding wire comprises the following chemical components: 1-3% of Pd, 50-400 ppm of Zn, 200-400 ppm of Al and the balance of copper. According to the invention, palladium and a trace amount of zinc and aluminum are added into pure copper, so that the oxidation resistance of the copper alloy bonding wire is improved, and the hardness of the copper alloy bonding wire is balanced; the invention adopts vacuum melting and water-cooling casting to obtain an alloy bar, and obtains the copper alloy bonding wire through annealing and wire drawing treatment, wherein the length of a Heat Affected Zone (HAZ) is as low as 60 mu m, and the Vickers hardness of FAB is 7.5-8.0 (g/mil)2) (ii) a When the invention is applied to lead bonding in semiconductor packaging, the mixed gas of nitrogen and hydrogen is adopted for protection, the bonding success rate is more than 95 percent, and the mean value of the tension of copper wire ball bonding reaches 5.0 gf.

Description

Copper alloy bonding wire and preparation method and application thereof
Technical Field
The invention belongs to the technical field of semiconductor packaging materials, and particularly relates to a copper alloy bonding wire and a preparation method and application thereof.
Background
In the field of semiconductor packaging, wire bonding is an important process, and is an important technique for connecting a chip and an external lead. With the development of packaging technology, there are three types of bonding wires commonly used in IC chip packaging factories, namely gold wires, bare copper wires, and palladium-plated copper wires. The gold wire is the most commonly used bonding wire of the prior large-scale integrated circuit chip, but the gold is a rare metal, and the gold price rises dramatically in recent years, so that the production cost of enterprises is increased. Therefore, it is a urgent task in each packaging factory to select metal wires with higher cost performance to replace gold wires.
Copper metal is such a replaceable metal, and copper has the following advantages over gold: conductivity is better than gold, which determines that its power loss is smaller, in order to pass larger currents with thin wires; copper has good thermal conductivity. The thermal conductivity of copper is 1.3 times of that of gold, so that the heat transfer of a contact surface during bonding is facilitated, bonding and working can be performed under high-temperature environmental conditions, the tensile strength of copper is high, and the arc radian of a lead is easily protected. However, the use of pure copper wire bonding also has inevitable disadvantages: copper has high hardness and is not easy to deform, so that the stress on the bonding pad is relatively large, the lead is not easy to collapse and deform during the whole plastic package mould pressing, short circuit failure is caused, and the surface of a chip is easy to damage in the bonding process. However, copper is easily oxidized, and has poor chemical stability compared with gold, and during the formation of the free air ball, the oxidation of copper affects the size and shape of the free air ball, and the flow rate and proportion of the protective gas are not well controlled, so that the free air ball is difficult to control, and the unqualified first welding point appears in the bonding process.
The palladium-plated copper wire is a pure copper bonding wire with a palladium-plated surface, which is developed for improving the oxidation resistance of copper, and although the palladium-plated copper wire solves the problem of easy oxidation of the copper bonding wire during balling to a certain extent, the palladium-plated copper wire still has the defect of high hardness, and the palladium-plated copper wire still cannot meet the application of high-end packaging during bonding. The invention discloses a method for preparing a flexible copper wire by Linliang of Shandong Yino electronic material Co., Ltd, and the published Chinese patent CN101626006A describes that: a flexible bonding copper wire, which consists of the following components: ce0.001% -0.005%, Pd 0.003% -0.005%, Pt 0.005% -0.009%, and the balance of Cu, and by adopting the multi-element doped alloy, the hardness of copper, especially the balling hardness, is reduced, the impact force and damage to a chip are reduced, the bonding energy is reduced, the generation of interface oxides and cracks is prevented, the stability of the bonding performance is maintained, and the bonding performance, the conductivity and the oxidation resistance are improved. However, the flexible bonding copper wire prepared by the method needs to be added with Pt, so that the manufacturing cost is high in large-scale application, and a certain oxidation phenomenon still exists during bonding; in fact, the pure copper is doped with a proper amount of trace elements to further improve the oxidation resistance of the copper wire, but the method can also increase the hardness of the copper wire, and in order to balance the contradiction, relevant researchers have always sought a copper alloy bonding wire which is low in manufacturing cost and hardness and suitable for high-end packaging, and have also sought to develop a bonding method matched with the copper alloy bonding wire.
Disclosure of Invention
In view of the above, the present invention aims to provide a copper alloy bonding wire, a preparation method and an application thereof, the copper alloy bonding wire provided by the present invention has low cost and moderate hardness, and the present invention also develops a bonding method matched with the copper alloy bonding wire.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a copper alloy bonding wire, which comprises the following chemical components in percentage by mass: 1-3% of Pd, 50-400 ppm of Zn, 200-400 ppm of Al and the balance of copper.
Preferably, the chemical composition of the copper alloy bonding wire is as follows by mass: 3 percent of Pd, 100ppm of Zn, 300ppm of Al and the balance of copper.
Preferably, the diameter of the copper alloy bonding wire is 0.7-1.5 mil.
The invention provides a preparation method of the copper alloy bonding wire in the technical scheme, which comprises the following steps:
(1) briquetting copper, palladium, zinc and aluminum, and then carrying out vacuum melting to obtain alloy liquid;
(2) carrying out water-cooling casting on the alloy liquid in the step (1) to obtain an alloy rod;
(3) and (3) sequentially annealing and drawing the alloy rod in the step (2) to obtain the copper alloy bonding wire.
Preferably, in the step (1), high-frequency induction melting equipment is adopted for vacuum melting, the temperature of the vacuum melting is 1330-1360 ℃, and the time is 10-15 min.
Preferably, argon is introduced for protection in the vacuum melting process.
Preferably, the alloy rod in the step (2) is a cylindrical alloy rod with the diameter of 4-8 mm.
Preferably, the temperature of the annealing treatment in the step (3) is 500-540 ℃, and the time is 0.02-0.06 second.
The invention provides the application of the copper alloy bonding wire in the technical scheme in lead bonding in semiconductor packaging.
Preferably, the wire bonding conditions are as follows: a gold wire ball bonding machine is adopted, nitrogen-hydrogen mixed gas is used as protective gas, the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen in the protective gas is 95: 5; the bonding pressure is 120-140 gram force/point, the ultrasonic power is 1-1.4W, the temperature of the workbench is 140-160 ℃, the ball burning current is 80-100 mA, and the ball burning time is 0.3-0.5 ms.
Has the advantages that:
the invention provides a copper alloy bonding wire, which comprises the following chemical components in percentage by mass: 1-3% of Pd, 50-400 ppm of Zn, 200-400 ppm of Al and the balance of copper. According to the invention, palladium and a trace amount of zinc and aluminum are added into pure copper, so that the oxidation resistance of the copper alloy bonding wire is improved, and the hardness of the copper alloy bonding wire is balanced.
The invention provides a preparation method of a copper alloy bonding wire, which comprises the steps of obtaining alloy liquid by vacuum melting, performing water-cooling casting to form a copper alloy bar, and then performing annealing and wire drawing treatment, wherein crystal grains in the alloy can be refined, the defects are eliminated, the mechanical property of the copper alloy bar can be improved, the copper alloy can be prevented from being oxidized, the subsequent wire drawing treatment is facilitated, the length of a Heat Affected Zone (HAZ) of the copper alloy bonding wire obtained after wire drawing is as low as 60 mu m, the processing damage is small, and the FAB Vickers hardness is 7.5-8.0 (g/mil)2)。
The invention provides an application of the copper alloy bonding wire in lead bonding in semiconductor packaging. Furthermore, the invention develops a matched bonding method aiming at the performance of the copper alloy bonding wire, protects the copper alloy bonding wire by mixed gas of nitrogen and hydrogen during bonding, optimizes the parameters of ultrasonic bonding, and has the characteristics of high success rate and good bonding balling performance.
Detailed Description
The invention provides a copper alloy bonding wire, which comprises the following chemical components in percentage by mass: 1-3% of Pd, 50-400 ppm of Zn, 200-400 ppm of Al and the balance of copper.
In the invention, the copper alloy bonding wire contains 1-3% of Pd, preferably 1.5-2.5%, and more preferably 2.0% by mass.
The copper alloy bonding wire comprises, by mass, 50-400 ppm of Zn, preferably 100-350 ppm, more preferably 150-300 ppm, and even more preferably 200-250 ppm of Zn.
The copper alloy bonding wire comprises 200-400 ppm, preferably 250-350 ppm and more preferably 300ppm of Al by mass.
According to the invention, palladium is added into copper, so that the problem of easy oxidation of copper can be improved, and the firmness of a welding spot is enhanced; the inventor finds that zinc and aluminum are further added into the copper-palladium alloy in a trace amount, the zinc can improve the plasticity of the alloy, and the aluminum can assist palladium to improve the problem of copper oxidation during bonding.
In the present invention, the diameter of the copper alloy bonding wire is preferably 0.7 to 1.5mil, more preferably 0.8 to 1.4mil, and even more preferably 1.0 to 1.2 mil.
The invention provides a preparation method of the copper alloy bonding wire in the technical scheme, which comprises the following steps:
(1) pressing copper, palladium, zinc and aluminum into blocks, and then carrying out vacuum melting to obtain alloy liquid;
(2) carrying out water-cooling casting on the alloy liquid in the step (1) to obtain an alloy rod;
(3) and (3) sequentially annealing and drawing the alloy rod in the step (2) to obtain the copper alloy bonding wire.
In the invention, copper, palladium, zinc and aluminum are weighed, pressed into blocks and then vacuum smelted to obtain alloy liquid. In the present invention, the purity of the Pd is preferably > 99.99%, the purity of the Cu is preferably > 99.99%, the purity of the Zn is preferably > 99.9%, and the purity of the Al is preferably > 99.9%. The invention has no special requirement on the briquetting mode of the raw materials, and the briquetted furnace burden is preferably put into a boron nitride crucible; according to the invention, high-frequency induction melting equipment is preferably adopted for vacuum melting, the temperature of the vacuum melting is preferably 1330-1360 ℃, and more preferably, the temperature isPreferably 1330-1350 ℃, more preferably 1340 ℃, and preferably 10-15 min, more preferably 10-12 min, more preferably 11 min. When the vacuum melting is carried out, the interior of the melting equipment is preferably vacuumized, and the vacuum degree is preferably 10-3mmHg, it is preferable to introduce argon after vacuum pumping.
After the alloy liquid is obtained, the alloy liquid is subjected to water-cooling casting to obtain the alloy rod. In the invention, the water-cooled casting mould is preferably a water-cooled copper mould, and the invention has no special requirement on the water-cooled copper mould. According to the invention, the cylindrical alloy rod is obtained through water-cooling copper mold casting, preferably casting, and the cross section diameter of the cylindrical alloy rod is preferably 4-8 mm, more preferably 5-7 mm, and most preferably 6 mm.
After the alloy bar is obtained, the alloy bar is sequentially subjected to annealing and wire drawing treatment to obtain the copper alloy bonding wire. The invention preferably uses a drawing apparatus with continuous annealing for annealing and drawing processes, such as RJ 2-280-9. In the invention, the temperature of the annealing treatment is preferably 500-540 ℃, more preferably 520 ℃, and the time is preferably 0.02-0.06 seconds, more preferably 0.04 seconds. According to the invention, through short-time annealing treatment, crystal grains in the alloy can be refined, defects are eliminated, the mechanical property of the copper alloy rod can be improved, the copper alloy can be prevented from being oxidized, and the subsequent wire drawing treatment is facilitated.
After the annealing treatment is finished, the alloy rod is subjected to wire drawing treatment. In the present invention, the diameter of the copper alloy bonding wire obtained by the wire drawing treatment is preferably 0.7 to 1.5mil, more preferably 0.8 to 1.4mil, and even more preferably 1.0 to 1.2 mil. In the present invention, 1mil is 25.4 μm. The invention preferably uses a drawing apparatus with continuous annealing for annealing and drawing processes, such as RJ 2-280-9. The invention preferably performs the rewinding to the disc of the copper alloy bonding wire obtained by the wire drawing treatment. In the invention, the length of a Heat Affected Zone (HAZ) of the copper alloy bonding wire obtained after wire drawing treatment is as low as 60 mu m, the processing damage is small, and the Vickers hardness of FAB is 7.5-8.0 (g/mil)2)。
The invention provides the application of the copper alloy bonding wire in the technical scheme in lead bonding in semiconductor packaging.
In the present invention, the wire bonding conditions are preferably: a gold wire ball bonding machine is adopted, nitrogen-hydrogen mixed gas is used as protective gas, the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; the bonding pressure is 120-140 gram force/point, the ultrasonic power is 1-1.4W, the temperature of the workbench is 140-160 ℃, the ball burning current is 80-100 mA, and the ball burning time is 0.3-0.5 ms.
In the present invention, the gold wire ball bonding machine is preferably a gold wire ball bonding machine HS-865. The invention researches the relationship of the components, the diameter, the melting point, the hardness and the balling performance of the copper alloy bonding wire, provides a bonding method matched with the copper alloy bonding wire, optimizes the parameters of ultrasonic bonding, greatly improves the bonding success rate and the bonding quality, the bonding success rate is over 95 percent, and the mean value of the tension of copper wire ball bonding reaches 5.0 gf.
The following provides a detailed description of a copper alloy bonding wire and a method for making the same and applications of the same, which are not to be construed as limiting the scope of the present invention.
In the raw materials used in examples 1 to 5, the purity of Pd is preferably > 99.99%, the purity of Cu is preferably > 99.99%, the purity of Zn is preferably > 99.9%, and the purity of Al is preferably > 99.9%.
Example 1
A copper alloy bonding wire is prepared by the following steps:
weighing the following components in percentage by mass: 3.0 percent of palladium, 100ppm of zinc, 300ppm of aluminum and the balance of copper; pressing the furnace charge into blocks, loading into a boron nitride crucible, and vacuumizing to 10-3Performing high-frequency induction melting under the protection of argon filled with mmHg at 1340 ℃ for 11min, pouring into a water-cooled copper mold, and casting into an alloy rod with the diameter of 6 mm;
annealing at 520 ℃ for 0.04s by using wire drawing equipment RJ2-280-9 with continuous annealing, drawing an alloy rod with the diameter of 6mm into an alloy wire with the diameter of 1mil, and rewinding; the Heat Affected Zone (HAZ) length was as low as 60 μm and the FAB Vickers hardness was 7.8 (g/mil)2)。
The copper alloy bonding wire prepared in example 1 is bonded by hot-pressing ultrasonic:
the bonding equipment is a gold wire ball bonding machine HS-865, and the bonding conditions are as follows: using nitrogen-hydrogen mixed gas as protective gas, wherein the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; the bonding pressure is 145 gram force/point, the ultrasonic power is 1.2W, the temperature of the workbench is 150 ℃, the ball burning current is 90mA, and the ball burning time is 0.4 ms. Through tests, the mean value of the tensile force of copper wire ball bonding is as follows: CMT8501 Electron Universal test, 5.0 gf.
Example 2
A copper alloy bonding wire is prepared by the following steps:
weighing the following components in percentage by mass: 3.0 percent of palladium, 50ppm of zinc, 200ppm of aluminum and the balance of copper; pressing the furnace charge into blocks, loading into a boron nitride crucible, and vacuumizing to 10-3Performing high-frequency induction melting under the protection of argon filled with mmHg at 1340 ℃ for 12min, pouring into a water-cooled copper mold, and casting into an alloy rod with the diameter of 6 mm;
annealing at 520 ℃ for 0.04s by using wire drawing equipment RJ2-280-9 with continuous annealing, drawing an alloy rod with the diameter of 6mm into an alloy wire with the diameter of 0.8mil, and rewinding; the Heat Affected Zone (HAZ) length was as low as 60 μm and the FAB Vickers hardness was 8.0 (g/mil)2)。
The copper alloy bonding wire prepared in example 2 was bonded by hot-pressing ultrasonic:
the bonding equipment is a gold wire ball bonding machine HS-865, and the bonding conditions are as follows: using nitrogen-hydrogen mixed gas as protective gas, wherein the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; the bonding pressure is 135 gram force/point, the ultrasonic power is 1.0W, the temperature of the workbench is 150 ℃, the ball burning current is 90mA, and the ball burning time is 0.4 ms. Through tests, the mean value of the tensile force of copper wire ball bonding is as follows: CMT8501 Electron Universal test, 4.8 gf.
Example 3
A copper alloy bonding wire is prepared by the following steps:
weighing the following components in percentage by mass: 3.0 percent of palladium, 400ppm of zinc, 400ppm of aluminum and the balance of copper; pressing the furnace charge into blocks, loading into a boron nitride crucible, and vacuumizing to 10-3mmHg is filled with argon to perform high-frequency induction melting at 1360 ℃ for 13min, and then poured into a water-cooling copper mold to be cast into an alloy rod with the diameter of 6 mm;
annealing at 520 ℃ for 0.04s by using wire drawing equipment RJ2-280-9 with continuous annealing, drawing an alloy rod with the diameter of 6mm into an alloy wire with the diameter of 1.2mil, and rewinding; the Heat Affected Zone (HAZ) length was as low as 60 μm and the FAB Vickers hardness was 7.5 (g/mil)2)。
The copper alloy bonding wire prepared in example 3 was bonded by hot-pressing ultrasonic:
the bonding equipment is a gold wire ball bonding machine HS-865, and the bonding conditions are as follows: using nitrogen-hydrogen mixed gas as protective gas, wherein the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; the bonding pressure is 145 gram force/point, the ultrasonic power is 1.2W, the temperature of the workbench is 160 ℃, the ball burning current is 10mA, and the ball burning time is 0.4 ms. Through tests, the mean value of the tensile force of copper wire ball bonding is as follows: CMT8501 Electron Universal test, 5.0 gf.
Example 4
A copper alloy bonding wire is prepared by the following steps:
weighing the following components in percentage by mass: 1.0% of palladium, 100ppm of zinc, 300ppm of aluminum and the balance of copper; pressing the furnace charge into blocks, loading into a boron nitride crucible, and vacuumizing to 10-3Performing high-frequency induction melting under the protection of argon filled with mmHg at 1350 ℃ for 15min, pouring into a water-cooled copper mold, and casting into an alloy rod with the diameter of 4 mm;
annealing at 520 ℃ for 0.04s by using wire drawing equipment RJ2-280-9 with continuous annealing, drawing an alloy rod with the diameter of 4mm into an alloy wire with the diameter of 1.5mil, and rewinding; the Heat Affected Zone (HAZ) length was as low as 60 μm and the FAB Vickers hardness was 7.6 (g/mil)2)。
The copper alloy bonding wire prepared in example 4 was bonded by hot-pressing ultrasonic:
the bonding equipment is a gold wire ball bonding machine HS-865, and the bonding conditions are as follows: using nitrogen-hydrogen mixed gas as protective gas, wherein the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; the bonding pressure is 125 gram force/point, the ultrasonic power is 1.2W, the temperature of the workbench is 140 ℃, the ball burning current is 90mA, and the ball burning time is 0.4 ms. Through tests, the mean value of the tensile force of copper wire ball bonding is as follows: CMT8501 Electron Universal test, 5.0 gf.
Example 5
A copper alloy bonding wire is prepared by the following steps:
weighing the following components in percentage by mass: 2.0 percent of palladium, 200ppm of zinc, 200ppm of aluminum and the balance of copper; pressing the furnace charge into blocks, loading into a boron nitride crucible, and vacuumizing to 10-3Performing high-frequency induction melting under the protection of argon filled with mmHg at 1330 ℃ for 11min, then pouring into a water-cooled copper mold, and casting into an alloy rod with the diameter of 8 mm;
annealing at 520 ℃ for 0.04s by using wire drawing equipment RJ2-280-9 with continuous annealing, drawing an alloy rod with the diameter of 8mm into an alloy wire with the diameter of 1mil, and rewinding; the Heat Affected Zone (HAZ) length was as low as 60 μm and the FAB Vickers hardness was 7.8 (g/mil)2)。
The copper alloy bonding wire prepared in example 5 was bonded by hot-pressing ultrasonic bonding:
the bonding equipment is a gold wire ball bonding machine HS-865, and the bonding conditions are as follows: using nitrogen-hydrogen mixed gas as protective gas, wherein the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen is 95: 5; bonding pressure is 135 gram force/point, ultrasonic power is 1.2W, temperature of the workbench is 140 ℃, ball burning current is 90mA, and ball burning time is 0.4 ms. Through tests, the mean value of the tensile force of copper wire ball bonding is as follows: CMT8501 Electron Universal test, 5.0 gf.
As is clear from the above examples, the copper alloy bonding wires prepared in examples 1 to 5 of the present invention had a Heat Affected Zone (HAZ) length as low as 60 μm and a FAB Vickers hardness of 7.5 to 8.0 (g/mil)2) The bonding wire has the characteristic of moderate hardness, and through a large-batch hot-pressing ultrasonic bonding test, the mean value of the bonding tension of the bonded copper wire ball reaches 5.0gf, and the bonding success rate is more than 95 percent through statistics.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (7)

1. The copper alloy bonding wire is characterized by comprising the following chemical components in percentage by mass: 3 percent of Pd, 100ppm of Zn, 300ppm of Al and the balance of copper;
the preparation method of the copper alloy bonding wire comprises the following steps:
(1) pressing copper, palladium, zinc and aluminum into blocks, and then carrying out vacuum melting to obtain alloy liquid;
(2) carrying out water-cooling casting on the alloy liquid in the step (1) to obtain an alloy rod;
(3) sequentially annealing and drawing the alloy rod in the step (2) to obtain a copper alloy bonding wire;
in the step (1), high-frequency induction melting equipment is adopted for vacuum melting, the temperature of the vacuum melting is 1330-1360 ℃, and the time is 10-15 min;
the temperature of the annealing treatment in the step (3) is 500-540 ℃, and the time is 0.02-0.06 second.
2. The copper alloy bonding wire according to claim 1, wherein the copper alloy bonding wire has a diameter of 0.7-1.5 mil.
3. A method for preparing the copper alloy bonding wire according to any one of claims 1 to 2, comprising the steps of:
(1) pressing copper, palladium, zinc and aluminum into blocks, and then carrying out vacuum melting to obtain alloy liquid;
(2) carrying out water-cooling casting on the alloy liquid in the step (1) to obtain an alloy rod;
(3) sequentially annealing and drawing the alloy rod in the step (2) to obtain a copper alloy bonding wire; in the step (1), high-frequency induction melting equipment is adopted for vacuum melting, the temperature of the vacuum melting is 1330-1360 ℃, and the time is 10-15 min; the temperature of the annealing treatment in the step (3) is 500-540 ℃, and the time is 0.02-0.06 second.
4. The preparation method of claim 3, wherein the vacuum melting is performed under the protection of argon.
5. The manufacturing method according to claim 3, wherein the alloy rod in the step (2) is a cylindrical alloy rod with a diameter of 4-8 mm.
6. Use of the copper alloy bonding wire according to any one of claims 1 to 2 or the copper alloy bonding wire prepared by the preparation method according to any one of claims 3 to 5 in wire bonding in semiconductor packaging.
7. Use according to claim 6, wherein the wire bonding conditions are: a gold wire ball bonding machine is adopted, nitrogen-hydrogen mixed gas is used as protective gas, the flow rate of the protective gas is 0.8L/min, and the volume ratio of nitrogen to hydrogen in the protective gas is 95: 5; the bonding pressure is 120-140 gram force/point, the ultrasonic power is 1-1.4W, the temperature of the workbench is 140-160 ℃, the ball burning current is 80-100 mA, and the ball burning time is 0.3-0.5 ms.
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