CN201975388U - Anti-oxidation copper-based bonding wire - Google Patents

Anti-oxidation copper-based bonding wire Download PDF

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Publication number
CN201975388U
CN201975388U CN2010206813243U CN201020681324U CN201975388U CN 201975388 U CN201975388 U CN 201975388U CN 2010206813243 U CN2010206813243 U CN 2010206813243U CN 201020681324 U CN201020681324 U CN 201020681324U CN 201975388 U CN201975388 U CN 201975388U
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wire
bonding
copper
gold
plying
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CN2010206813243U
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赵碎孟
薛子夜
周钢
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ZHEJIANG GPILOT TECHNOLOGY Co Ltd
GUANGZHOU JIABO BONGDING WIRES TECHNOLOGY Co Ltd
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Abstract

The utility model provides an anti-oxidation copper-based bonding wire, which consists of a copper wire and a gold layer coated outside the copper wire, wherein the diameter of the copper wire is between 0.02 millimeter and 0.075 millimeter; the thickness of the electroplated gold layer is between 0.1 micron and 0.5 micron; and the gold layer is electroplated outside the copper wire. The preparation process of a product mainly comprises smelting, drawing, cleaning, gold-plating, annealing, winding, packaging and the like. The anti-oxidation copper-based bonding wire has the advantages of high oxidation resistance, high electrical conductivity, low radian, low hardness and low price, adopts an ordinary package, can be stored at normal temperature for a long time, and can meet the development requirements of low electronic packaging cost, high performance, multiple functions and the like.

Description

The plying of anti-oxidation copper base key
Technical field
The utility model relates to the bonding wire technology, the plying of particularly a kind of anti-oxidation copper base key.
Background technology
Along with the progress of science and technology, the electron trade fast development.Go up to universe exploration,, all be unable to do without electronic product down to daily life.The basis of electron trade high speed development is the generation of integrated circuit.And the process of producing integrated circuit is called semiconductor packages.Four big basic materials of world semiconductor encapsulation are: chip, bonding wire, framework, plastic packaging material.At present, the annual value of production of global semiconductor product surpasses 3,000 hundred million dollars, and wherein the output value of bonding wire is only second to chip; Bonding wire (bonding wire claims ball bonding silk or wire again) is used lead as encapsulation, is one of requisite basic material in the manufacture process of integrated circuit and semi-conductor discrete device.
The bonding wire industry output value has vast potential for future development with 9～21% speed high speed development every year on average.And the technological innovation of this product scope emerges in an endless stream.Bonding wire is the meticulous high tensile wire of a kind of diameter, is requisite encapsulation lead in integrated circuit, semi-conductor discrete device and the LED luminous tube manufacture process.Common have alloy bonding silk (bonding alloy wire, bonding alloy silk), gold bonding silk, aluminium bonding wire, a copper bonding wire etc.The speciality that bonding wire need possess is that corrosion-resistant, conductibility, connectivity are good, and bonding speed is fast.
The advantage and the technological deficiency of these existing products are as follows:
One, bonding alloy wire
The main material of bonding alloy wire (claiming bonding alloy silk, alloy silk, alloy wire again) is silver, and purity 〉=99.9% is emerging bonding wire, is a kind of fabulous lead material of excellent electric, heat conduction, mechanical performance and chemical stability that possesses.The purpose that the bonding alloy wire occurs is exactly in order to substitute traditional bonding gold wire, can to stop the expansion of bonding brass wire simultaneously.
The bonding alloy wire has following advantage:
The cost of material is low for the bonding alloy wire, can reduce the unit packaging cost greatly with respect to bonding gold wire, improves the competitive advantage of semiconductor product;
The good conductivity of bonding alloy wire, gold solder line are 4.5510E7/Ohm, and by contrast, the alloy bonding wire is 6.2810E7/Ohm;
Little pitch packages of bonding alloy wire is effective, and in order to improve current densities, the bonding alloy wire can adopt thinner bonding wire in little pitch packages, and little pitch applications performance is excellent more, and the weld pad size is less;
With respect to bonding gold wire, the bonding alloy wire can improve current capacity and the performance of power adjustments device (TO220, TO92, DPAK or the like);
The thermal conductivity of bonding alloy wire is good, and heat transfer efficiency is higher, and bonding gold wire is 31.1kW/m2K, and the bonding alloy wire is 42.3kW/m2K;
The engineering properties height of bonding alloy wire, tensile strength is bigger, elongation property is better, has excellent ball neck intensity and higher camber line stability in the mold pressing;
The intermetallic of bonding alloy wire (IMC) speed of growth is slow, can improve mechanical stability, reduce the resistance recruitment; The IMC growth is comparatively gentle, thereby has improved bond strength;
The bonding alloy wire solder joint effective, with the phase of solder joint ratio of bonding gold wire, the intermetallic speed of growth in the bonding alloy wire solder joint significantly reduces.This has reduced resistance significantly, has reduced heat production, and has finally improved soldering reliability and device performance; Because the intermetallic speed of growth, resistance and heat production in the bonding alloy wire all are lower than bonding gold wire, its resistance recruitment and aging speed in time reduced simultaneously.
At present, the bonding alloy wire has been widely used in LED and has made, industries such as IC encapsulation, and part has substituted bonding gold wire.But the easy oxidation of bonding alloy wire can only partly substitute bonding gold wire; Therefore, bonding gold wire still accounts for the market share in bonding wire market about 70%, and the bonding alloy wire accounts for 30%.
Except above-mentioned shortcoming, also there are a lot of weak points in existing bonding alloy wire, mainly is:
1, the bonding alloy wire burns moment oxidation behind the ball, and hardness is higher, needs when bonding the very big bonding force could complete adhesion with aluminium base, easily injure by a crashing object aluminium base, very high to chip and aluminium base requirement;
2, the bonding alloy wire is easy to oxidation, and when storing, environmental condition is limited bigger.Existing bonding alloy wire adopts vacuum-packed, but a large amount of packings has indivedual leakage phenomenons once in a while, and transporting handling process simultaneously also is to cause the factor of leakage.Packing is not in case leakage is used as if in the short time, and alloy wire will lose efficacy because of oxidation.
Simultaneously, when bringing into use on equipment, the bonding alloy wire has just begun oxidation, and single shaft length can only be used the bonding alloy wire of the longest 200m, if surpass 200m, back bonding alloy wire partly will lose efficacy because of oxidation.Because the time spent line of bonding alloy wire is short, so must increase the thread-changing number of times, this greatly reduces the bonding production efficiency in the semiconductor package process.
Two, bonding gold wire
The main material of bonding gold wire is a gold, and purity is traditional bonding line between 99%-99.99%, occupies leading position at present in the use of bonding wire.The major advantage of bonding gold wire is to have good electrical conductivity and non-oxidizability; Have remarkable one-tenth arc stbility and significant bonding performance.
In existing bonding wire application technology, bonding gold wire is a kind of traditional bonding wire.The gold bonding silk that the lead of the luminous encapsulation of LED adopts the high-purity gold of 15 to 75 microns of diameters to make mostly, the purity of Metal Substrate gold is equipped with trace elements such as palladium, nickel, cerium again greater than 99.999%, makes through melting, wire drawing, annealing supervisor.Arc is stable, the bonding rapidity because of having good electrical conductivity, non-oxidizability and remarkable becoming for bonding gold wire, in using, bonding wire occupies an leading position at present, but it costs an arm and a leg, and this shortcoming reduces the survival pressure aspect and forms the restriction bottleneck in present enterprise profit-push space.Along with the height of the price of gold is lifted, the bonding gold wire price continues high.Because the influence of World Economics, the enterprise product profit margin reduces, and living space pressure increases, and causes enterprise to exploit potentialities, and reduces production costs, and seeks new bonding line, substitutes bonding gold wire.
In addition, bonding gold wire intensity is on the low side, and this has also reduced its using value.
Bonding gold wire is easy to generate harmful intermetallic compound.These intermetallic compound lattice constant differences, mechanical property is also different with hot property, can produce the material migration during reaction, thereby form visible Kirkendall cavity at interlayer, make the bonding place produce cavity, resistance sharply increases, and the ohm that has destroyed integrated circuit connects, conductivity heavy damage or produce the crack easily causes that at this device solder joint throws off and lost efficacy.
The poor heat resistance of bonding gold wire, the recrystallization temperature of gold is lower, causes elevated temperature strength lower.During ball bonding, near the spun gold the soldered ball forms recrystallized structure owing to being heated, if spun gold meeting really up to the mark causes the ball neck warpage; During the soldered ball heating, thickization of spun gold crystal grain can cause the ball neck fracture.
Bonding gold wire also causes collapse a phenomenon and conditions of streaking easily, and this can have a strong impact on the quality of bonding.
Three, aluminium bonding wire
The aluminium bonding wire is a kind of bonding wire cheaply.Lot of domestic and international R﹠D institution is all producing the aluminium bonding wire of various alternative spun golds by changing production technology.
Existing aluminium bonding wire often comprises the 1%Si that is evenly distributed, 99.99% raffinal, and mechanical property is stable, does not curl, and pollutes blemish etc.; The shape of encircling during bonding is good, and neck fracture of wire phenomenon is few, is stained with to connect the intensity height.
But existing aluminium bonding wire heats easy oxidation when ball bonding, generates the very hard oxide-film of one deck, the formation of this film meeting stymie, and spherical stability is the key property of aluminium bonding wire bond strength.Experiment showed, bonding gold wire ball bonding solder joint circularity height in air; The ball bonding of aluminium bonding wire is owing to the influence of surface oxidation, and solder joint circularity is low in the air.
Sagging and the silk that collapses of lead-in wire takes place not as spun gold in the hot strength of aluminium bonding wire and thermal endurance easily;
The unstable properties of coaxial aluminium bonding wire, particularly percentage elongation fluctuation are big, differ greatly with the performance of batch products; The product lumber recovery is low, and surface cleanness is poor, more easily produces fatigue fracture at the bonding place.
Four, bonding brass wire
To the research of copper lead-in wire bonding wire (bonding brass wire) lasting for years, goal in research mainly is to substitute bonding gold wire with it both at home and abroad.The topmost actuating force of this replacement comes from: some marked changes of current semicon industry directly have influence on the IC interconnection technique, wherein have 3 big factors promoting the development of interconnection technique.The 1st is that device chip substrate occurred by the transformation of aluminum metallization to copper metallization; The 2nd is that the copper metallization of chip substrate can make current densities higher, and the density of device increases, increased functionality.Above-mentioned requirements is satisfied in this encapsulation that just needs the minimum thin space of welding zone solder joint, height to draw terminal number.The 3rd is cost, and gold wire bonding length surpasses 5mm at present, and pin count reaches more than 400, and packaging cost is above 0.20 dollar.
Adopt copper wire bonding new technology not only can reduce the device manufacturing cost, and its interconnect strength is also better than spun gold.It has promoted the development that low cost, thin space, height are drawn the terminal number device package.Bonding wire selects short copper wire bonding and spacing will become the strong rival of upside-down mounting welding procedure less than the brazing district of 50 μ m on encapsulation market for the novel encapsulated design of high speed device.
Along with the appearance and the application of microelectronic industry new technology and new technology, package dimension and pattern all there is requirement higher, that upgrade.At first be that the requirement bonding wire is thinner, packaging density is higher and cost is lower.General exit reaches 500 in the senior encapsulation of thin space, and gold wire bonding length is greater than 5mm, and its packaging cost is more than 0.2 dollar.With compared in the past, the price of wire bond becomes the major issue in the encapsulation.Thus, after improvement, make the copper wire bonding more firm, more stable than gold wire bonding through new technology such as new E FO (electronics fire extinguishing), OP2 (anti-oxidant technology) and MRP (reducing modulus technology).Especially draw in the IC packaging technology of number, thin space, little welding zone at large batch of height, become one of bonding material that substitutes spun gold.
As far back as 20 end of the centurys, copper wire balls welder skill just metallizes as the aluminium welding zone that a kind of method that reduces cost is applied on the wafer.But in the standard packaging form of industry at that time is the plastics dual in-line package of 18～40 lead-in wires (plastics DIP), and its welding zone spacing is 150～200 μ m, and the soldered ball chi is 100～125 μ m, and the length of wire bond is difficult to surpass 3mm.So in enormous quantities, highly reliable product, gold ball bonding technology is more stable more reliable than copper wire balls welder's skill.Yet,, now package dimension and pattern are all had requirement higher, that upgrade along with the appearance and the application of microelectronic industry new technology and new technology.At first be that the requirement bonding wire is thinner, packaging density is higher and cost is lower.Therefore, copper bonding wire has caused people's attention again.
The technology of making bonding brass wire of single crystal Cu has been invented by some enterprise, and it is directly too little to have solved to its bonding brass wire product section line, easily the problem of oxidation.These products have the good mechanical performance, higher Fracture Force, percentage elongation preferably, and bonding force preferably.
Existing copper bonding wire also has electric property preferably, and the electric property of encapsulating material has directly determined the performance index of chip, along with chip frequency improves constantly, the electrical property of the conductor material in the encapsulation is had higher requirement.The conductivity of copper exceeds nearly 40% than gold, exceed nearly 2 times than aluminium.
Existing copper bonding wire also has thermal property preferably, and the thermal property of bonding brass wire significantly is better than gold and aluminium, therefore can reach better heat dispersion and higher rated power with thinner gage of wire.Along with the raising of chip density and dwindling of volume, the heat radiation in the chip manufacturing proces is the important content that design and processes is considered.In encapsulating material commonly used, copper is all better than the heat transfer property of gold and aluminium, is widely used in the manufacturing of electronic devices and components.In to the more and more higher superchip packaging technology of heat radiation requirement, choose copper cash and replace gold thread and aluminum steel very valuable.And the thermal coefficient of expansion of copper is lower than aluminium, thereby the thermal stress of its solder joint is also lower, has improved the reliability of device greatly.
Existing copper bonding wire also has more stable performance, and copper bonding wire intermetallic compound growth speed is slow.With spun gold phase of solder joint ratio, the intermetallic compound growth speed in the linking copper wire solder joint significantly reduces.This can reduce the resistance recruitment, reduces heat production, improves device reliability.
The price advantage of bonding brass wire is very obvious than bonding gold wire, and tensile strength also promotes to some extent, but also there are a lot of weak points in bonding brass wire, and subject matter is:
Adopt the copper wire bonding, enterprise must or have under the environment of protective atmosphere in vacuum and carries out, to prevent copper ball, copper wire oxidation.This needs enterprise to purchase new welder or existing equipment is carried out large-scale the transformation realize.
In addition, physical parameters such as the hardness of copper, yield strength are higher than gold and aluminium, need apply bigger ultrasonic energy and bonding pressure during bonding, easily semiconductor chip caused damage, even cause irremediable destruction.Therefore, the requirement of bonding brass wire para-linkage equipment, technology is higher.This has influenced the popularization of bonding brass wire.Prior art also has following defective:
One, linking copper wire burn moment oxidation behind the ball, and hardness is higher, need when bonding the very big bonding force could complete adhesion with aluminium base, easily injure by a crashing object aluminium base, very high to chip and aluminium base requirement.
Two, strongly close copper cash and be easy to oxidation, when storing, condition is limited.Traditional copper wire adopts vacuum-packed, but a large amount of packings has indivedual leakage phenomenons once in a while, and transporting handling process simultaneously also is to cause the factor of leakage.Packing is not in case leakage is used as if in the short time, and copper cash will lose efficacy because of oxidation.Simultaneously, when using on equipment, copper cash has begun oxidation, and single shaft length can only be used the copper cash of the longest 200m, if surpass 200m, will lose efficacy because of oxidation in back partly copper cash.Because line is short,, cause bonding production efficiency low so increased the thread-changing number of times.
How to overcome the technological deficiency of existing bonding brass wire, improve its oxidation resistance, bond strength, this is the technical barrier that this area does not overcome.
Summary of the invention
The utility model provides a kind of novel product of copper bonding wire at the technology flaw that prior art exists in actual applications.
Technical solution adopted in the utility model is, a kind of copper bonding wire is made up of copper wire and the gold layer that is wrapped in the copper wire outside, and brass wire diameter is 0.02 millimeter--and 0.075 millimeter, the electrogilding layer thickness is 0.1 micron to 0.5 micron, and described gold layer is electroplated onto the outside of described copper wire.
Each composition components by weight percent is in the bonding brass wire material: copper＞=99%; Gold＜=1%.Described copper base key plying diameter is preferably 0.03 millimeter--0.06 millimeter, being preferably 0.03 millimeter again--0.04 millimeter.Described golden layer thickness is preferably 0.1 micron to 0.4 micron, is being preferably 0.1 micron to 0.3 micron, more preferably 0.1 micron to 0.2 micron.
The preparation process of described copper base key plying is as follows:
Step 1, melting, 8 millimeters copper rods of drawing.Adopt the condition of high vacuum degree smelting furnace, vacuum degree reaches 10 -2--10 -4Mpa melts high-purity copper, and the purity of copper is higher than 99.99%, is warming up to 1100 ℃ of refinings more than 50 minutes, and the smelting furnace process adopts the high purity argon protection, and adopting solidification mode to draw diameter at last is 8 millimeters copper rod.
Step 2 draws microfilament.Promptly copper rod is carried out Wire Drawing, earlier highly purified 8 millimeters copper rods are carried out cold working, be machined to 0.9 millimeter to 1.1 millimeters copper wire of diameter, carry out drawing then and handle, each working modulus is 15% to 20%, and each drawing speed is controlled in 45 meters/minute to 60 meters/minute; Pass through following similar process then repeatedly, adopting each working modulus is 6% to 20%, and aforementioned copper wire is machined to 0.02 millimeter of diameter--0.075 millimeter, draw rate is controlled at 400 meters/minute to 600 meters/minute.
Step 3 is cleaned microfilament.Adopt the absolute alcohol medium, utilize ultrasonic technology to carry out the microfilament surface clean, ultrasonic frequency is 25KHz--40KHz.
Step 4, gold-plated processing.Adopt special-purpose line formula equipment that microfilament is carried out electroplating processes, gold is plated on the copper wire surface, regulate the Current Control electroplating velocity, and thickness of coating, the thickness of gold layer is 0.1 micron to 0.5 micron.
Step 5, annealing in process.The bonding wire of gold-plated processing is heat-treated on annealing device, and heat treatment is carried out under the nitrogen protection environment, and heat treatment temperature is 410 ℃--and 425 ℃, the processing time is controlled at 0.7S--2.1S, in when annealing control tension force size 2.5g.
Step 6, coiling.Use special-purpose coil winding machine, on the bobbin with the bonding wire fixed length amount of being wound on inch diameter.Length can be 50 meters, 200 meters, 300 meters, 500 meters, 1000 meters and does not wait.
Step 7, packing.Because of the plying of above-mentioned copper base key has anti-oxidation coating,, needn't vacuum packaging can carry out the normal temperature preservation so adopt ordinary packing.
The beneficial effects of the utility model are:
The first, price advantage.Important material of the present utility model is a copper, reduces greatly than the cost of bonding gold wire, for enterprise has created profit margin, has improved Enterprises'Competitiveness.
The second, antioxygenic property.The gold-plated bonding wire that makes of copper base key plying has good antioxygenic property, can oxidation in air under the normal temperature, therefore be convenient to packing and storage.Saved vacuum-packed higher technical costs, ordinary packing, and to transportation, storage condition is less demanding; The conventional keys plying is because of oxidation in the use, so its length limited system, and the utility model bonding wire can be designed as the polytype that is uneven in length, and its length no longer is subjected to the restriction of chemical change; In bonding process, traditional copper wire avoids the generation of oxidation to carry out in no air conservation conditionity, and the utility model bonding wire does not need not have air conservation.
The 3rd, have the gold and the advantage of two kinds of materials of copper concurrently.Has good electrical conductivity; Have good thermal conductivity, the more traditional bonding brass wire of heat transfer efficiency is higher; The engineering properties height, tensile strength is big than bonding gold wire, and extensibility is better, has higher camber line stability; The intermetallic speed of growth is slow, has improved mechanical stability, has reduced the resistance recruitment than bonding gold wire, has improved bond strength.
Description of drawings
Fig. 1 is product configurations figure of the present utility model.
Embodiment
Embodiment one
A kind of anti-oxidation copper base key plying is made up of copper wire and the gold layer that is wrapped in the copper wire outside, and brass wire diameter is 0.035 millimeter, and the outside golden layer thickness of plating is 0.15 micron.Each composition components by weight percent is in the material: copper is 99%; Gold is 1%.
Its preparation process is:
A, reach 10 in vacuum degree -2--10 -4In the condition of high vacuum degree smelting furnace of Mpa, purity is higher than 99.99% high-purity copper melts, be warming up to 1150 ℃ of refinings 60 minutes, the smelting furnace process adopts the high purity argon protection, and adopting solidification mode to draw diameter at last is 8 millimeters copper rod.
B, copper rod is carried out Wire Drawing, earlier above-mentioned highly purified 8 millimeters copper rods are carried out cold working, be machined to 1.0 millimeters copper wires of diameter, carry out drawing then and handle, each working modulus is 15%, and drawing speed is controlled in 45 meters/minute to 60 meters/minute at every turn; Repeatedly handle through following similar process then, adopting each working modulus is 10%, and aforementioned copper wire is machined to 0.04 millimeter of diameter, and draw rate is controlled at 400 meters/minute to 600 meters/minute.
C, employing absolute alcohol medium utilize ultrasonic technology to carry out the microfilament surface clean, and ultrasonic frequency is 25KHz--40KHz.
D, the special-purpose line formula equipment of employing carry out electroplating processes to microfilament, and gold is plated on the copper wire surface, regulate the Current Control electroplating velocity, and thickness of coating, and the thickness of gold layer is 0.2 micron.
E, the bonding wire of gold-plated processing is heat-treated on annealing device, heat treatment is carried out under the nitrogen protection environment, and heat treatment temperature is 420 ℃, and the processing time is controlled at 1.5S, during control annealing in the tension force size 2.5g.
F, use special-purpose coil winding machine, on the bobbin with the bonding wire fixed length amount of being wound on inch diameter, length is 500 meters.
G, employing ordinary packing, normal temperature is preserved.
Embodiment two
As shown in Figure 1, present embodiment discloses a kind of anti-oxidation copper base key plying, is made up of copper wire (101) and the gold layer (102) that is wrapped in the copper wire outside, and brass wire diameter is 0.07 millimeter, and the outside golden layer thickness of plating is 0.2 micron.Each composition components by weight percent is in the material: copper is 99.2%; Gold is 0.8%.
Its preparation process is:
A, reach 10 in vacuum degree -2--10 -4In the condition of high vacuum degree smelting furnace of Mpa, purity is higher than 99.99% high-purity copper melts, be warming up to 1160 ℃ of refinings 60 minutes, the smelting furnace process adopts the high purity argon protection, and adopting solidification mode to draw diameter at last is 8 millimeters copper rod.
B, copper rod is carried out Wire Drawing, earlier above-mentioned highly purified 8 millimeters copper rods are carried out cold working, be machined to 0.8 millimeter copper wire of diameter, carry out drawing then and handle, each working modulus is 15%, and drawing speed is controlled in 45 meters/minute to 60 meters/minute at every turn; Repeatedly handle through following similar process then, adopting each working modulus is 10%, and aforementioned copper wire is machined to 0.05 millimeter of diameter, and draw rate is controlled at 400 meters/minute to 600 meters/minute.
C, employing absolute alcohol medium utilize ultrasonic technology to carry out the microfilament surface clean, and ultrasonic frequency is 25KHz--40KHz.
D, the special-purpose line formula equipment of employing carry out electroplating processes to microfilament, and gold is plated on the copper wire surface, regulate the Current Control electroplating velocity, and thickness of coating, and the thickness of gold layer is 0.2 micron.
E, the bonding wire of gold-plated processing is heat-treated on annealing device, heat treatment is carried out under the nitrogen protection environment, and heat treatment temperature is 420 ℃, and the processing time is controlled at 1.5S, during control annealing in the tension force size 2.5g.
F, use special-purpose coil winding machine, on the bobbin with the bonding wire fixed length amount of being wound on inch diameter, length is 500 meters.
G, employing ordinary packing, normal temperature is preserved.
Embodiment three
A kind of anti-oxidation copper base key plying is made up of copper wire and the gold layer that is wrapped in the copper wire outside, and brass wire diameter is 0.05 millimeter, and the outside golden layer thickness of plating is 0.3 micron.Examining report shown in accompanying drawing 1 to 3 and table 1, wherein, the figure of each figure (a) is traditional bonding brass wire, figure (b) is new bonding brass wire.With traditional bonding brass wire relatively, new copper base key plying antioxygenic property is strong, it is good to be welded into arc, low to welding requirements, balling-up is little, welding back non-oxidation phenomenon.
Table 1 bonding wire equipment is adjusted parameter and relay testing result
Figure BSA00000399206800121
Figure BSA00000399206800131

Claims (10)

1. anti-oxidation copper base key plying is made up of copper wire and the gold layer that is wrapped in the copper wire outside, and brass wire diameter is 0.02 millimeter--and 0.075 millimeter, the outside golden layer thickness of plating is 0.1 micron to 0.5 micron, and described gold layer is electroplated onto the skin of described copper wire.
2. anti-oxidation copper base key according to claim 1 plying is characterized in that, described copper base key plying diameter is 0.03 millimeter--0.06 millimeter.
3. anti-oxidation copper base key according to claim 1 plying is characterized in that, described copper base key plying diameter is 0.03 millimeter--0.04 millimeter.
4. according to the plying of the described anti-oxidation copper base key of claim, it is characterized in that described golden layer thickness is 0.1 micron to 0.4 micron.
5. anti-oxidation copper base key according to claim 1 plying is characterized in that, described golden layer thickness is 0.1 micron to 0.3 micron.
6. anti-oxidation copper base key according to claim 1 plying is characterized in that, described golden layer thickness is 0.1 micron to 0.2 micron.
7. according to each described anti-oxidation copper base key plying of claim 1 to 6, it is characterized in that described copper base key plying fixed length is wound on the bobbin, described copper base key plying length is 50 meters to 1000 meters.
8. anti-oxidation copper base key according to claim 7 plying is characterized in that, described copper base key plying fixed length is 50 meters.
9. anti-oxidation copper base key according to claim 7 plying is characterized in that, described copper base key plying fixed length is 200 meters.
10. anti-oxidation copper base key according to claim 7 plying is characterized in that, described copper base key plying fixed length is 300 meters.
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CN102324392A (en) * 2011-10-19 2012-01-18 广东佳博电子科技有限公司 Preparation process for anti-oxidation copper-based bonding wires
CN102332439A (en) * 2011-10-19 2012-01-25 浙江佳博科技股份有限公司 Copper-based bonding wire with anti-oxidation coating and processing technology thereof
CN102361026A (en) * 2011-10-19 2012-02-22 广东佳博电子科技有限公司 Copper-based bonding wire with anti-oxidation function
CN102509724A (en) * 2011-10-19 2012-06-20 广东佳博电子科技有限公司 Copper-based bonding wire and preparation method thereof
CN104299719A (en) * 2013-07-17 2015-01-21 河南九发高导铜材股份有限公司 Single crystal copper-silver composite conductor and preparation method thereof
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CN105772612A (en) * 2016-05-13 2016-07-20 北京科技大学 Preparation method for gold-cladding copper composite wire
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CN102324392A (en) * 2011-10-19 2012-01-18 广东佳博电子科技有限公司 Preparation process for anti-oxidation copper-based bonding wires
CN102332439A (en) * 2011-10-19 2012-01-25 浙江佳博科技股份有限公司 Copper-based bonding wire with anti-oxidation coating and processing technology thereof
CN102361026A (en) * 2011-10-19 2012-02-22 广东佳博电子科技有限公司 Copper-based bonding wire with anti-oxidation function
CN102509724A (en) * 2011-10-19 2012-06-20 广东佳博电子科技有限公司 Copper-based bonding wire and preparation method thereof
CN102332439B (en) * 2011-10-19 2013-08-21 浙江佳博科技股份有限公司 Processing technology of copper-based bonding wire with anti-oxidation coating
CN104299719A (en) * 2013-07-17 2015-01-21 河南九发高导铜材股份有限公司 Single crystal copper-silver composite conductor and preparation method thereof
CN104134645B (en) * 2014-06-30 2017-06-27 厦门润晶光电集团有限公司 A kind of packaging conductive wire material structure and its processing method
CN104716250A (en) * 2015-03-02 2015-06-17 安徽华晶微电子材料科技有限公司 Extremely fine gold free silver alloy gold-plating bonding wire and manufacture method thereof
CN105355616A (en) * 2015-11-20 2016-02-24 广东梅雁吉祥实业投资股份有限公司 Anti-oxidation metal product
CN105355616B (en) * 2015-11-20 2017-12-19 广东梅雁吉祥实业投资股份有限公司 A kind of anti-oxidation metal product
CN105772612A (en) * 2016-05-13 2016-07-20 北京科技大学 Preparation method for gold-cladding copper composite wire

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