CN110284023A - One Albatra metal bonding wire and its preparation method and application - Google Patents
One Albatra metal bonding wire and its preparation method and application Download PDFInfo
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- CN110284023A CN110284023A CN201910661273.3A CN201910661273A CN110284023A CN 110284023 A CN110284023 A CN 110284023A CN 201910661273 A CN201910661273 A CN 201910661273A CN 110284023 A CN110284023 A CN 110284023A
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- copper
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- bonding wire
- copper alloy
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 title claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 37
- 239000000956 alloy Substances 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005491 wire drawing Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 239000001257 hydrogen Substances 0.000 claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 18
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000002844 melting Methods 0.000 claims abstract description 14
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000005266 casting Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000003723 Smelting Methods 0.000 claims description 3
- 229910000611 Zinc aluminium Inorganic materials 0.000 abstract description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003026 anti-oxygenic effect Effects 0.000 abstract description 2
- 239000003566 sealing material Substances 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000006698 induction Effects 0.000 description 7
- 238000002485 combustion reaction Methods 0.000 description 6
- 238000007731 hot pressing Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 241001388119 Anisotremus surinamensis Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/0075—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for rods of limited length
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
- H01L2224/48511—Heat affected zone [HAZ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
Abstract
The present invention provides Albatra metal bonding wires and its preparation method and application, belong to semiconductor sealing material technical field, the chemical composition of the copper alloy bonding wire are as follows: Pd:1~3%, Zn:50~400ppm, Al:200~400ppm, surplus are copper.The present invention adds palladium and micro zinc-aluminium in fine copper, improves the antioxygenic property of copper alloy bonding wire, balances the hardness of copper alloy bonding wire；The present invention obtains alloy bar using vacuum melting, water-cooled casting, by annealing and wire drawing process, obtains copper alloy bonding wire, for heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is 7.5~8.0 (g/mil2)；The present invention carries out wire bonding in semiconductor packages in application, protecting using the mixed gas of nitrogen and hydrogen, is bonded success rate > 95%, and the pulling force mean value of copper wire balls bonding reaches 5.0gf.
Description
Technical field
The invention belongs to semiconductor sealing material technical fields, and in particular to Albatra metal bonding wire and preparation method thereof
And application.
Background technique
In field of semiconductor package, wire bonding is a critically important procedure, it be by chip and external pin into
The important technology of row connection.It is at present there are three types of the IC chip encapsulation common bonding lines of factory, i.e., golden with the development of encapsulation technology
Line, bare copper wire and plating palladium copper wire.Wherein, gold thread is soft, and electric conductivity is excellent, therefore gold thread is former large-scale integrated
Circuit chip most common bonding line, but gold is rare metal, and price of gold recent years soars all the way in addition, increases enterprise
Production cost.Therefore the higher metal wire substitution gold thread of cost performance is selected to become the task of top priority of each encapsulation factory at present.
Metallic copper is exactly such a alternative metal, copper relative to gold, its advantage is that: electric conductivity is better than gold, this decision
Its power loss is smaller, in order to pass through bigger electric current with filament；The good heat conductivity of copper.The thermal conductance of copper is golden
1.3 times of thermal conductance are conducive to the heat transmitting of contact surface when bonding, are better able to be bonded and work in high ambient conditions, copper
Tensile strength is high, is easy the arc radian of protection lead.But using fine copper line bonding, there is also inevitable disadvantages: copper is hard
Degree is high, it is not easy to it deforms, thus it is relatively large for the stress of pad, make lead be not easy to collapse change when entire plastic packaging is molded
Shape leads to short-circuit failure, the surface of chip is also easily destroyed in bonding process.But copper is easy to oxidize, chemical stability is than gold
Difference, during forming free air ball, the oxidation of copper will affect the size and shape of free air ball, control bad protection
The flow and ratio of gas, free air ball are difficult to control, so as to cause occurring underproof first weldering in bonding process
Point.
Plating palladium copper wire be in order to improve the inoxidizability of copper and research and develop a kind of surface plating palladium fine copper bonding wire, although plating
It is oxidizable when palladium copper wire solves the problems, such as copper bonding wire balling-up to a certain extent, but there are still the higher defect of hardness,
Bonding is not able to satisfy the application of high-end encapsulation still when using.The good invention of woods of one promise Electron Material Co., Ltd of Shandong is a kind of soft
The preparation method of property copper wire describes in disclosed Chinese patent CN101626006A: a kind of flexible bonding copper wire, by following
Group is grouped as: Ce0.001%~0.005%, Pd 0.003%~0.005%, Pt 0.005%~0.009%, surplus Cu,
By taking multi-element doping alloy, the hardness of copper, especially balling-up hardness are reduced, the impact force to chip and destruction, drop are reduced
Low bonding energy, prevents the generation of interfacial oxide and crackle, keeps the stabilization of its binding performance, to improve associativity
Energy, electric conductivity and inoxidizability.But the flexible bonding copper wire of the method for invention preparation is answered on a large scale due to needing to add Pt
Used time cost is higher, and there are still certain oxidative phenomenas when bonding；In fact, adulterating some suitable microelements in fine copper
It can be further improved the oxidation resistance of copper wire, but this way can be such that the hardness of copper wire rises again, in order to balance this lance
Shield, related researcher are seeking always a kind of not only low cost, hardness but also the copper alloy bonding wire for being suitble to high-end encapsulation, simultaneously also
Develop matched bonding method.
Summary of the invention
In view of this, it is an object of that present invention to provide Albatra metal bonding wire and its preparation method and application, the present invention
Copper alloy bonding wire low cost, the hardness of offer are moderate, and the present invention also developed the key to match with the copper alloy bonding wire
Conjunction method.
In order to achieve the above-mentioned object of the invention, the present invention the following technical schemes are provided:
The present invention provides an Albatra metal bonding wires, based on mass content, the chemical composition of the copper alloy bonding wire
Ingredient are as follows: Pd:1~3%, Zn:50~400ppm, Al:200~400ppm, surplus are copper.
Preferably, based on mass content, the chemical composition of the copper alloy bonding wire are as follows: Pd:3%, Zn:
100ppm, Al:300ppm, surplus are copper.
Preferably, the diameter of copper alloy bonding wire is 0.7~1.5mil.
The present invention provides the preparation methods of copper alloy bonding wire described in above-mentioned technical proposal, include the following steps:
(1) by copper, palladium, zinc and aluminium, vacuum melting is carried out after briquetting, obtains aluminium alloy；
(2) aluminium alloy described in step (1) is subjected to water-cooled casting, obtains alloy bar；
(3) alloy bar described in step (2) is successively carried out to annealing and wire drawing process, obtains copper alloy bonding wire.
Preferably, vacuum melting uses high-frequency induction smelting equipment in the step (1), and the temperature of the vacuum melting is
1330~1360 DEG C, the time is 10~15min.
Preferably, the vacuum melting is passed through argon gas protection.
Preferably, the cylindrical alloy bar that alloy bar is 4~8mm of diameter in the step (2).
Preferably, the temperature made annealing treatment in the step (3) is 500~540 DEG C, and the time is 0.02~0.06 second.
The present invention provides the applications of the wire bonding in semiconductor packages of copper alloy bonding wire described in above-mentioned technical proposal.
Preferably, the condition of the wire bonding are as follows: use gold wire ball bonding equipment, use nitrogen hydrogen mixeding gas as protection
Gas, the shield gas flow rate are 0.8L/min, and the volume ratio of nitrogen and hydrogen is 95:5 in protective gas；Bonding pressure is
120~140 gram forces/point, ultrasonic power are 1~1.4W, and operating temperature is 140~160 DEG C, and burning ball electric current is 80~100mA,
The burning ball time is 0.3~0.5ms.
The utility model has the advantages that
The present invention provides an Albatra metal bonding wires, based on mass content, the chemical composition of the copper alloy bonding wire
Ingredient are as follows: Pd:1~3%, Zn:50~400ppm, Al:200~400ppm, surplus are copper.The present invention in fine copper by adding
Palladium and micro zinc-aluminium had not only improved the antioxygenic property of copper alloy bonding wire but also had balanced the hardness of copper alloy bonding wire.
The present invention provides the preparation methods of an Albatra metal bonding wire, obtain aluminium alloy using vacuum melting, water cooling is poured
Annealing and wire drawing process are carried out again after casting Copper alloy bar, and the crystal grain refinement that can make in alloy of the invention eliminates defect, both
It is able to ascend the mechanical property of Copper alloy bar, and can prevent copper alloy from aoxidizing, is conducive to subsequent wire drawing process, is obtained after wire drawing
For heat affected area (HAZ) length of copper alloy bonding wire down to 60 μm, machining damage is small, and FAB Vickers hardness is 7.5~8.0 (g/
mil2)。
The present invention provides the applications of copper alloy bonding wire wire bonding in semiconductor packages.Further, originally
Invention passes through the gaseous mixture of nitrogen and hydrogen when bonding for the performance development bonding method to match of copper alloy bonding wire
Body is protected, and optimizes the parameter of ultrasonic bond, has success rate high, is bonded the good feature of balling property, embodiment knot
Fruit shows to be bonded using copper alloy bonding wire provided by the invention, is bonded success rate > 95%, the pulling force of copper wire balls bonding
Mean value reaches 5.0gf.
Specific embodiment
The present invention provides an Albatra metal bonding wires, based on mass content, the chemical composition of the copper alloy bonding wire
Ingredient are as follows: Pd:1~3%, Zn:50~400ppm, Al:200~400ppm, surplus are copper.
In the present invention, based on mass content, in the copper alloy bonding wire contain Pd:1~3%, preferably 1.5~
2.5%, more preferably 2.0%.
Based on mass content, in copper alloy bonding wire of the present invention contain Zn:50~400ppm, preferably 100~
350ppm, more preferably 150~300ppm, further preferably 200~250ppm.
Based on mass content, in copper alloy bonding wire of the present invention contain Al:200~400ppm, preferably 250~
350ppm, more preferably 300ppm.
Palladium is added in the present invention in copper, can improve the oxidizable problem of copper, enhance the firmness of solder joint；Invention human hair
It is existing, micro zinc and aluminium are further added in copper palldium alloy, the plasticity of alloy can be improved in zinc, and aluminium can assist palladium to improve key
The problem of oxidation of copper when conjunction.
In the present invention, the diameter of the copper alloy bonding wire is preferably 0.7~1.5mil, more preferably 0.8~
1.4mil, further preferably 1.0~1.2mil.
The present invention provides the preparation methods of copper alloy bonding wire described in above-mentioned technical proposal, include the following steps:
(1) vacuum melting will be carried out after copper, palladium, zinc and aluminium briquet, obtains aluminium alloy；
(2) aluminium alloy described in step (1) is subjected to water-cooled casting, obtains alloy bar；
(3) alloy bar described in step (2) is successively carried out to annealing and wire drawing process, obtains copper alloy bonding wire.
In the present invention, copper, palladium, zinc, aluminium are weighed, vacuum melting is carried out after briquetting, obtains aluminium alloy.In the present invention,
The preferred > 99.99% of the purity of the Pd, the preferred > 99.99% of the purity of the Cu, the preferred > 99.9% of the purity of the Zn,
The preferred > 99.9% of the purity of the purity of the Al.Furnace charge of the present invention to the briquetting mode of raw material without particular/special requirement, after briquetting
It is preferably placed into boron nitride crucible；Present invention preferably employs vacuum melting is carried out using high-frequency induction smelting equipment, the vacuum is molten
The temperature of refining is preferably 1330~1360 DEG C, more preferably 1330~1350 DEG C, further preferably 1340 DEG C, and the time is preferably
10~15min, more preferably 10~12min, further preferably 11min.When the present invention carries out vacuum melting, preferably will first it melt
It is vacuumized inside refining equipment, the vacuum degree is preferably 10-3MmHg, the present invention are passed through argon gas protection after preferably vacuumizing.
After obtaining aluminium alloy, the aluminium alloy is carried out water-cooled casting by the present invention, obtains alloy bar.In the present invention, institute
The mold for stating water-cooled casting is preferably water cooled copper mould, and the present invention is to water cooled copper mould without particular/special requirement.The present invention passes through water cooled copper mould
Casting, preferably casting obtain cylindrical alloy bar, and the cross-sectional diameter of the cylinder alloy bar is preferably 4~8mm, more excellent
It is selected as 5~7mm, most preferably 6mm.
After obtaining alloy bar, alloy bar of the present invention successively carries out annealing and wire drawing process, obtains copper alloy bonding wire.
Anneal and wire drawing process present invention preferably uses the wire-drawing equipment with continuous annealing, such as RJ2-280-9.In the present invention
In, the temperature of the annealing is preferably 500~540 DEG C, and more preferably 520 DEG C, the time is preferably 0.02~0.06 second, more
Preferably 0.04 second.The present invention can make the crystal grain refinement in alloy by the annealing of short time, eliminate defect, can
The mechanical property of Copper alloy bar is enough promoted, and can prevent copper alloy from aoxidizing, is more favorable for subsequent wire drawing process.
After the completion of annealing, alloy bar is carried out wire drawing process by the present invention.In the present invention, the wire drawing process obtains
The diameter of copper alloy bonding wire be preferably 0.7~1.5mil, more preferably 0.8~1.4mil, further preferably 1.0~
1.2mil.In the present invention, 1mil=25.4 μm.It is annealed and is drawn present invention preferably uses the wire-drawing equipment with continuous annealing
Silk processing, such as RJ2-280-9.The obtained copper alloy bonding wire of wire drawing process is preferably carried out after-combustion into disk by the present invention.This
In invention, heat affected area (HAZ) length of the copper alloy bonding wire obtained after wire drawing process is down to 60 μm, and machining damage is small, FAB
Vickers hardness is 7.5~8.0 (g/mil2)。
The present invention provides the applications of the wire bonding in semiconductor packages of copper alloy bonding wire described in above-mentioned technical proposal.
In the present invention, the condition of the wire bonding is preferred are as follows: uses gold wire ball bonding equipment, uses nitrogen hydrogen mixeding gas
As protective gas, the shield gas flow rate is 0.8L/min, and the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is
120~140 gram forces/point, ultrasonic power are 1~1.4W, and operating temperature is 140~160 DEG C, and burning ball electric current is 80~100mA,
The burning ball time is 0.3~0.5ms.
In the present invention, the gold wire ball bonding equipment is preferably gold wire ball bonding equipment HS-865.The present invention is directed to copper alloy
Ingredient, diameter, fusing point and the hardness of bonding wire and the relationship of balling property are studied, and matching bonding side is provided
Method optimizes the parameter of ultrasonic bond, substantially increases bonding success rate and bonding quality, bonding success rate 95% or more,
The pulling force mean value of copper wire balls bonding reaches 5.0gf.
Albatra metal bonding wire provided by the invention and its preparation method and application is carried out below with reference to embodiment detailed
Thin explanation, but they cannot be interpreted as limiting the scope of the present invention.
In raw material used in Examples 1 to 5, the preferred > 99.99% of the purity of Pd, the preferred > 99.99% of the purity of Cu,
The preferred > 99.9% of the purity of Zn, the preferred > 99.9% of the purity of the purity of Al.
Embodiment 1
One Albatra metal bonding wire, preparation the following steps are included:
Weigh by mass content: palladium 3.0%, zinc 100ppm, aluminium 300ppm, surplus are copper；Furnace charge is pressed into block, is packed into nitridation
Boron crucible, vacuumizing is 10-3MmHg, high-frequency induction melts under argon filling gas shielded, and temperature is 1340 DEG C, time 11min, then
Water cooled copper mould is poured into, the alloy bar that diameter is 6mm is cast；
Using the wire-drawing equipment RJ2-280-9 with continuous annealing, anneal 0.04s at a temperature of 520 DEG C, by the alloy of 6mm
Stick pulls into the alloy wire that diameter is 1mil, after-combustion；Through detection heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is
7.8(g/mil2)。
Copper alloy bonding wire prepared by embodiment 1 uses hot pressing ultrasonic bond:
Bonding apparatus is gold wire ball bonding equipment HS-865, bonding conditions: uses nitrogen hydrogen mixeding gas as protective gas, institute
Shield gas flow rate is stated as 0.8L/min, the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is 145 gram forces/point, ultrasonic function
Rate is 1.2W, and operating temperature is 150 DEG C, and burning ball electric current is 90mA, and the burning ball time is 0.4ms.After tested, copper wire balls are bonded
Pulling force mean value: the test of CMT8501 electronic universal, 5.0gf.
Embodiment 2
One Albatra metal bonding wire, preparation the following steps are included:
Weigh by mass content: palladium 3.0%, zinc 50ppm, aluminium 200ppm, surplus are copper；Furnace charge is pressed into block, is packed into nitridation
Boron crucible, vacuumizing is 10-3MmHg, high-frequency induction melts under argon filling gas shielded, and temperature is 1340 DEG C, time 12min, then
Water cooled copper mould is poured into, the alloy bar that diameter is 6mm is cast；
Using the wire-drawing equipment RJ2-280-9 with continuous annealing, anneal 0.04s at a temperature of 520 DEG C, by the alloy of 6mm
Stick pulls into the alloy wire that diameter is 0.8mil, after-combustion；Through detection heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is
8.0(g/mil2)。
Copper alloy bonding wire prepared by embodiment 2 uses hot pressing ultrasonic bond:
Bonding apparatus is gold wire ball bonding equipment HS-865, bonding conditions: uses nitrogen hydrogen mixeding gas as protective gas, institute
Shield gas flow rate is stated as 0.8L/min, the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is 135 gram forces/point, ultrasonic function
Rate is 1.0W, and operating temperature is 150 DEG C, and burning ball electric current is 90mA, and the burning ball time is 0.4ms.After tested, copper wire balls are bonded
Pulling force mean value: the test of CMT8501 electronic universal, 4.8gf.
Embodiment 3
One Albatra metal bonding wire, preparation the following steps are included:
Weigh by mass content: palladium 3.0%, zinc 400ppm, aluminium 400ppm, surplus are copper；Furnace charge is pressed into block, is packed into nitridation
Boron crucible, vacuumizing is 10-3MmHg, high-frequency induction melts under argon filling gas shielded, and temperature is 1360 DEG C, time 13min, then
Water cooled copper mould is poured into, the alloy bar that diameter is 6mm is cast；
Using the wire-drawing equipment RJ2-280-9 with continuous annealing, anneal 0.04s at a temperature of 520 DEG C, by the alloy of 6mm
Stick pulls into the alloy wire that diameter is 1.2mil, after-combustion；Through detection heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is
7.5(g/mil2)。
Copper alloy bonding wire prepared by embodiment 3 uses hot pressing ultrasonic bond:
Bonding apparatus is gold wire ball bonding equipment HS-865, bonding conditions: uses nitrogen hydrogen mixeding gas as protective gas, institute
Shield gas flow rate is stated as 0.8L/min, the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is 145 gram forces/point, ultrasonic function
Rate is 1.2W, and operating temperature is 160 DEG C, and burning ball electric current is 10mA, and the burning ball time is 0.4ms.After tested, copper wire balls are bonded
Pulling force mean value: the test of CMT8501 electronic universal, 5.0gf.
Embodiment 4
One Albatra metal bonding wire, preparation the following steps are included:
Weigh by mass content: palladium 1.0%, zinc 100ppm, aluminium 300ppm, surplus are copper；Furnace charge is pressed into block, is packed into nitridation
Boron crucible, vacuumizing is 10-3MmHg, high-frequency induction melts under argon filling gas shielded, and temperature is 1350 DEG C, time 15min, then
Water cooled copper mould is poured into, the alloy bar that diameter is 4mm is cast；
Using the wire-drawing equipment RJ2-280-9 with continuous annealing, anneal 0.04s at a temperature of 520 DEG C, by the alloy of 4mm
Stick pulls into the alloy wire that diameter is 1.5mil, after-combustion；Through detection heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is
7.6(g/mil2)。
Copper alloy bonding wire prepared by embodiment 4 uses hot pressing ultrasonic bond:
Bonding apparatus is gold wire ball bonding equipment HS-865, bonding conditions: uses nitrogen hydrogen mixeding gas as protective gas, institute
Shield gas flow rate is stated as 0.8L/min, the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is 125 gram forces/point, ultrasonic function
Rate is 1.2W, and operating temperature is 140 DEG C, and burning ball electric current is 90mA, and the burning ball time is 0.4ms.After tested, copper wire balls are bonded
Pulling force mean value: the test of CMT8501 electronic universal, 5.0gf.
Embodiment 5
One Albatra metal bonding wire, preparation the following steps are included:
Weigh by mass content: palladium 2.0%, zinc 200ppm, aluminium 200ppm, surplus are copper；Furnace charge is pressed into block, is packed into nitridation
Boron crucible, vacuumizing is 10-3MmHg, high-frequency induction melts under argon filling gas shielded, and temperature is 1330 DEG C, time 11min, then
Water cooled copper mould is poured into, the alloy bar that diameter is 8mm is cast；
Using the wire-drawing equipment RJ2-280-9 with continuous annealing, anneal 0.04s at a temperature of 520 DEG C, by the alloy of 8mm
Stick pulls into the alloy wire that diameter is 1mil, after-combustion；Through detection heat affected area (HAZ) length down to 60 μm, FAB Vickers hardness is
7.8(g/mil2)。
Copper alloy bonding wire prepared by embodiment 5 uses hot pressing ultrasonic bond:
Bonding apparatus is gold wire ball bonding equipment HS-865, bonding conditions: uses nitrogen hydrogen mixeding gas as protective gas, institute
Shield gas flow rate is stated as 0.8L/min, the volume ratio of nitrogen and hydrogen is 95:5；Bonding pressure is 135 gram forces/point, ultrasonic function
Rate is 1.2W, and operating temperature is 140 DEG C, and burning ball electric current is 90mA, and the burning ball time is 0.4ms.After tested, copper wire balls are bonded
Pulling force mean value: the test of CMT8501 electronic universal, 5.0gf.
As seen from the above embodiment, the heat affected area (HAZ) for the copper alloy bonding wire that prepared by the embodiment of the present invention 1~5 is long
For degree down to 60 μm, FAB Vickers hardness is 7.5~8.0 (g/mil2), have the characteristics that hardness is moderate, it is super by large batch of hot pressing
Sound bonding test, the pulling force mean value of bonded copper pompon bonding reach 5.0gf, and statistics obtains bonding success rate > 95%.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. an Albatra metal bonding wire, which is characterized in that based on mass content, the chemical composition of the copper alloy bonding wire
Are as follows: Pd:1~3%, Zn:50~400ppm, Al:200~400ppm, surplus are copper.
2. copper alloy bonding wire according to claim 1, which is characterized in that based on mass content, the copper alloy bonding
The chemical composition of silk are as follows: Pd:3%, Zn:100ppm, Al:300ppm, surplus are copper.
3. described in any item copper alloy bonding wires according to claim 1~2, which is characterized in that the diameter of copper alloy bonding wire
For 0.7~1.5mil.
4. the preparation method of any one of claims 1 to 3 copper alloy bonding wire, which comprises the steps of:
(1) vacuum melting will be carried out after copper, palladium, zinc and aluminium briquet, obtains aluminium alloy；
(2) aluminium alloy described in step (1) is subjected to water-cooled casting, obtains alloy bar；
(3) alloy bar described in step (2) is successively carried out to annealing and wire drawing process, obtains copper alloy bonding wire.
5. the preparation method according to claim 4, which is characterized in that vacuum melting uses high frequency sense in the step (1)
Smelting equipment is answered, the temperature of the vacuum melting is 1330~1360 DEG C, and the time is 10~15min.
6. preparation method according to claim 5, which is characterized in that the vacuum melting is passed through argon gas protection.
7. the preparation method according to claim 4, which is characterized in that alloy bar is 4~8mm of diameter in the step (2)
Cylindrical alloy bar.
8. the preparation method according to claim 4, which is characterized in that the temperature made annealing treatment in the step (3) is 500
~540 DEG C, the time is 0.02~0.06 second.
9. any one of any one of claims 1 to 3 copper alloy bonding wire or claim 4~8 preparation method is prepared
Copper alloy bonding wire wire bonding in semiconductor packages application.
10. application according to claim 9, which is characterized in that the condition of the wire bonding are as follows: use gold wire ball bonding wire
Machine uses nitrogen hydrogen mixeding gas as protective gas, and the shield gas flow rate is 0.8L/min, nitrogen and hydrogen in protective gas
The volume ratio of gas is 95:5；Bonding pressure is 120~140 gram forces/point, and ultrasonic power is 1~1.4W, operating temperature 140
~160 DEG C, burning ball electric current is 80~100mA, and the burning ball time is 0.3~0.5ms.
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