CN108231600B - Processing method of bonding copper wire for packaging - Google Patents
Processing method of bonding copper wire for packaging Download PDFInfo
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- CN108231600B CN108231600B CN201711488971.5A CN201711488971A CN108231600B CN 108231600 B CN108231600 B CN 108231600B CN 201711488971 A CN201711488971 A CN 201711488971A CN 108231600 B CN108231600 B CN 108231600B
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- copper wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
Abstract
The invention discloses a processing method of a bonding copper wire for packaging, which comprises the following steps of adding Cu and L i into a smelting furnace under the protection of nitrogen according to the weight percentage for smelting, adding L a and Ce for continuous smelting, adding Ag, Sr and Sn for continuous smelting, preparing an oxygen-free copper rod through directional solidification, cooling the oxygen-free copper rod, adding the oxygen-free copper rod into a drawing machine, and performing rough drawing, fine drawing and annealing treatment to prepare the bonding copper wire for packaging.
Description
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a processing method of a bonding copper wire for packaging.
Background
In a semiconductor integrated circuit package in which a chip is connected to a lead frame by a wire bonding technique, at present, a connection wire used for wire bonding is mainly a pure gold wire because gold has oxidation corrosion resistance and high conductivity, and can be easily bonded to a designated position by a thermal compression method and an ultrasonic bonding technique. However, in recent years, the price of electronic products is decreasing with the increase of gold price, and the search for other more suitable metals to replace gold wires is a problem to be solved urgently. Copper line cost is lower, compares gold thread electrically conductive, heat conductivility can be good, and people adopt the copper line to replace the gold thread in order to reduce material cost gradually. However, copper wires are prone to oxidation, corrosion, high hardness and poor solderability, which also presents difficulties and challenges for copper wire bonding technology.
The chinese granted patent CN102130067B improves the oxidation resistance of copper wire by plating a layer of palladium with relatively low cost on the copper wire, but the palladium has insufficient conductivity. Chinese patents CN103219312A and CN103219311A disclose a double-plated bonded copper wire, i.e. a palladium layer is plated on the surface of a copper wire, and a gold layer or a silver layer is plated on the surface of the palladium layer, which solves the problems of easy oxidation of the copper wire and insufficient conductivity of the copper wire in palladium plating, but the preparation is complex and the cost is high.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a processing method of a bonding copper wire for packaging, which improves the oxidation resistance, corrosion resistance and electric conductivity of the copper wire, and has the advantages of simple preparation process and lower cost.
The invention provides a processing method of a bonding copper wire for packaging, which comprises the following steps:
s1, adding Cu98.86-99.27 wt% and L i0.02-0.05 wt% into a smelting furnace at 1200-1215 ℃ under the protection of nitrogen gas for smelting, then adding L a0.1-0.15 wt% and Ce0.1-0.15 wt% for smelting, then adding Ag0.4-0.6 wt%, Sr0.1-0.2 wt% and Sn0.01-0.03 wt% for smelting, and obtaining the oxygen-free copper rod through directional solidification;
s2, cooling the S1 oxygen-free copper rod at the temperature of between 45 and 30 ℃ below zero;
s3, adding the oxygen-free copper rod cooled in the step S2 into a drawing machine, and carrying out rough drawing and annealing treatment under the protection of nitrogen to obtain a rough copper wire;
and S4, adding the S3 crude copper wire into a drawing machine, and carrying out multiple fine drawing and annealing treatment under the protection of nitrogen to obtain the bonding copper wire for packaging.
Preferably, the purity of Cu in S1 is more than or equal to 99.99%.
Preferably, the weight content ratio of L a to Ce in S1 is 1.3-1.6: 1.
Preferably, the rough drawing speed in S3 is 250-400m/min, and the rough drawing speed is 350 m/min.
Preferably, the annealing temperature in S3 is 500-600 ℃, and the annealing time is 1-2 hours.
Preferably, the following formula is followed between the number of fine drawing and the diameter of the thick copper wire and the diameter of the bonding copper wire in S4: and N is D/10D +2, wherein D is the diameter of the thick copper wire, D is the diameter of the bonding copper wire, N is the fine drawing times, and if D/10D is a non-integer, N is an integer according to a rounding principle.
Preferably, the finish drawing speed in S4 is 70-150m/min, and the finish drawing speed is 80 m/min.
Preferably, the annealing temperature in S4 is 450-500 ℃, the annealing time is 1-2 hours, the preferred annealing temperature is 540 ℃, and the annealing time is 1 hour.
The invention provides a processing method of a bonding copper wire for packaging, which introduces alloy elements L i, L a, Ce, Ag, Sr and Sn into high-purity oxygen-free copper, and obviously improves the conductivity and oxidation resistance of the copper wire by controlling the alloy processing technology.
In conclusion, the invention reasonably designs the types and the contents of the alloy elements of the copper wire from the oxidation resistance, the corrosion resistance and the conductivity of the copper wire, and prepares the copper wire with excellent comprehensive performance by combining a proper processing technology.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to specific examples.
Example 1
The invention provides a processing method of a bonding copper wire for packaging, which comprises the following steps:
s1, adding Cu99.09wt% and L i0.05wt% into a smelting furnace with the temperature of 1210 ℃ for smelting under the protection of nitrogen according to the weight percentage, then adding L a 0.13 wt% and Ce0.1 wt% for smelting, then adding Ag 0.45 wt%, Sr0.15 wt% and Sn0.03 wt% for smelting, and obtaining the oxygen-free copper rod through directional solidification;
s2, cooling the S1 oxygen-free copper rod at minus 45 ℃ for 10 hours;
s3, adding the oxygen-free copper rod processed by the S2 into a drawing machine, carrying out rough drawing at the speed of 350m/min, and carrying out annealing treatment for 1.5 hours under the protection of nitrogen and at the annealing temperature of 580 ℃ to obtain a rough copper wire;
and S4, adding the S3 crude copper wire into a drawing machine, carrying out fine drawing for 3 times at the speed of 140m/min, and carrying out annealing treatment for 1 hour at the annealing temperature of 500 ℃ under the protection of nitrogen in each fine drawing to prepare the bonding copper wire for packaging.
Example 2
The invention provides a processing method of a bonding copper wire for packaging, which comprises the following steps:
s1, adding Cu99.24wt% and L i0.03wt% into a smelting furnace at the temperature of 1205 ℃ under the protection of nitrogen according to the weight percentage, smelting, adding L a 0.12wt% and Ce0.1wt% into the smelting furnace, smelting, adding Ag0.4wt%, Sr0.1wt% and Sn0.01wt% into the smelting furnace, and preparing the oxygen-free copper rod through directional solidification;
s2, cooling the S1 oxygen-free copper rod at-40 ℃ for 11 hours;
s3, adding the oxygen-free copper rod processed by the S2 into a drawing machine, carrying out rough drawing at the speed of 300m/min, and carrying out annealing treatment for 1.7 hours under the protection of nitrogen and at the annealing temperature of 550 ℃ to obtain a rough copper wire;
and S4, adding the S3 crude copper wire into a drawing machine, carrying out fine drawing for 3 times at the speed of 80m/min, and carrying out annealing treatment for 1.2 hours at the annealing temperature of 450 ℃ under the protection of nitrogen after each fine drawing to obtain the bonding copper wire for packaging.
Example 3
The invention provides a processing method of a bonding copper wire for packaging, which comprises the following steps:
s1, adding Cu98.91wt% and L i0.05wt% into a smelting furnace at 1200 ℃ under the protection of nitrogen according to the weight percentage for smelting, adding L a0.15wt% and Ce0.1wt% for continuous smelting, adding Ag0.56wt%, Sr0.2wt% and Sn0.03wt% for continuous smelting, and preparing an oxygen-free copper rod through directional solidification;
s2, cooling the S1 oxygen-free copper rod at 35 ℃ below zero for 11 hours;
s3, adding the oxygen-free copper rod processed in the S2 into a drawing machine, carrying out rough drawing at the speed of 330m/min, and carrying out annealing treatment for 1.2 hours at the annealing temperature of 540 ℃ under the protection of nitrogen to obtain a rough copper wire;
and S4, adding the S3 copper wire into a drawing machine, carrying out fine drawing for 3 times at the speed of 100m/min, and carrying out annealing treatment for 1.2 hours under the protection of nitrogen and at the annealing temperature of 450 ℃ after each fine drawing to obtain the bonding copper wire for packaging.
Example 4
The invention provides a processing method of a bonding copper wire for packaging, which comprises the following steps:
s1, adding Cu98.95wt% and L i0.03wt% into a smelting furnace at 1215 ℃ under the protection of nitrogen according to the weight percentage, smelting, adding L a0.15wt% and Ce0.15wt% into the smelting furnace, adding Ag0.55wt%, Sr0.15wt% and Sn0.02wt% into the smelting furnace, continuing to smelt, and performing directional solidification to obtain the oxygen-free copper rod;
s2, cooling the S1 oxygen-free copper rod at-30 ℃ for 12 hours;
s3, adding the oxygen-free copper rod processed in the S2 into a drawing machine, roughly drawing at the speed of 250m/min, and annealing for 2.0 hours at the annealing temperature of 590 ℃ under the protection of nitrogen to obtain a rough copper wire;
and S4, adding the S3 crude copper wire into a drawing machine, carrying out fine drawing for 2 times at the speed of 80m/min, and carrying out annealing treatment for 1.5 hours at the annealing temperature of 480 ℃ under the protection of nitrogen after each fine drawing to obtain the bonding copper wire for packaging.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (9)
1. A processing method of a bonding copper wire for packaging is characterized by comprising the following steps:
s1, adding Cu98.86-99.27 wt% and L i0.02-0.05 wt% into a smelting furnace at 1200-1215 ℃ under the protection of nitrogen gas for smelting, then adding L a0.1-0.15 wt% and Ce0.1-0.15 wt% for smelting, then adding Ag0.4-0.6 wt%, Sr0.1-0.2 wt% and Sn0.01-0.03 wt% for smelting, and obtaining the oxygen-free copper rod through directional solidification;
s2, cooling the S1 oxygen-free copper rod at the temperature of between 45 and 30 ℃ below zero;
s3, adding the oxygen-free copper rod cooled in the step S2 into a drawing machine, and carrying out rough drawing and annealing treatment under the protection of nitrogen to obtain a rough copper wire;
s4, adding the S3 thick copper wire into a stretcher, and carrying out multiple times of fine drawing and annealing treatment under the protection of nitrogen to obtain a bonding copper wire for packaging;
the following formula is followed between the number of fine drawing times, the diameter of the thick copper wire and the diameter of the bonding copper wire in S4: n is D/10D +2, wherein D is the diameter of the thick copper wire, D is the diameter of the bonding copper wire, N is the fine drawing times, if D/10D is a non-integer, N is an integer according to a rounding principle;
the fine drawing speed in S4 is 70-150 m/min.
2. The method for processing bonded copper wire for packaging as claimed in claim 1, wherein the purity of Cu in S1 is not less than 99.99%.
3. The method for processing the bonding copper wire for packaging as claimed in claim 1, wherein the weight content ratio of L a to Ce in S1 is 1.3-1.6: 1.
4. The method as claimed in claim 1, wherein the rough drawing speed in S3 is 250-400 m/min.
5. The method for processing a bonded copper wire for package as recited in claim 1, wherein the drawing speed in S3 is 350 m/min.
6. The method as claimed in claim 1, wherein the annealing temperature in S3 is 500-600 ℃ and the annealing time is 1-2 hours.
7. The method for processing a bonding copper wire for encapsulation as claimed in claim 1, wherein the finish drawing speed in S4 is 80 m/min.
8. The method as claimed in claim 1, wherein the annealing temperature in S4 is 450-500 ℃ and the annealing time is 1-2 hours.
9. The method for processing an encapsulating bonded copper wire as recited in claim 1, wherein the annealing temperature in S4 is 540 ℃ and the annealing time is 1 hour.
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| CN201711488971.5A CN108231600B (en) | 2017-12-30 | 2017-12-30 | Processing method of bonding copper wire for packaging |
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| CN201711488971.5A CN108231600B (en) | 2017-12-30 | 2017-12-30 | Processing method of bonding copper wire for packaging |
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| CN108231600A CN108231600A (en) | 2018-06-29 |
| CN108231600B true CN108231600B (en) | 2020-07-10 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109628770A (en) * | 2018-12-21 | 2019-04-16 | 芜湖楚江合金铜材有限公司 | A method of contact pin is produced with big volume copper wire |
| CN112143932A (en) * | 2020-09-10 | 2020-12-29 | 深圳金斯达应用材料有限公司 | Copper-based palladium coating bonding lead and manufacturing method thereof |
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