CN103789568B - A kind of alloy bonding silk and preparation method and application - Google Patents

A kind of alloy bonding silk and preparation method and application Download PDF

Info

Publication number
CN103789568B
CN103789568B CN201410054839.3A CN201410054839A CN103789568B CN 103789568 B CN103789568 B CN 103789568B CN 201410054839 A CN201410054839 A CN 201410054839A CN 103789568 B CN103789568 B CN 103789568B
Authority
CN
China
Prior art keywords
alloy bonding
20ppm
bonding silk
alloy
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410054839.3A
Other languages
Chinese (zh)
Other versions
CN103789568A (en
Inventor
周钢
薛子夜
赵义东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Original Assignee
ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG GPILOT TECHNOLOGY Co Ltd filed Critical ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Priority to CN201410054839.3A priority Critical patent/CN103789568B/en
Publication of CN103789568A publication Critical patent/CN103789568A/en
Application granted granted Critical
Publication of CN103789568B publication Critical patent/CN103789568B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present invention provides a kind of alloy bonding silk and preparation method thereof, and the composition and weight content of the alloy bonding silk are：Gold 5 10%, aluminium 1 5%, nickel 0.5 5%, remaining is purity >=99.999wt% silver.Alloy bonding silk cost provided by the invention is cheap, bonding performance is excellent, do not broken under high speed bonding conditions, mechanical performance is strong, available for integrated circuit, large scale integrated circuit, discrete device, LED encapsulation.

Description

A kind of alloy bonding silk and preparation method and application
Technical field
The present invention relates to a kind of alloy bonding silk, belong to encapsulating material technical field, the invention further relates to the alloy key The preparation method and applications of plying.
Background technology
Bonding wire is the crucial lead material being connected for integrated circuit or transistor chip tube core with lead frame.Tradition Bonding wire is mainly made up of proof gold material.The bonding wire of proof gold material has the physical properties such as preferable ductility and electric conductivity. But being growing more intense with LED and IC product market competitions, production marketing price decline to a great extent, and how to develop a kind of energy The effect of reaching proof gold bonding wire, and the metallic bond plying that material cost can be greatly reduced turns into extremely urgent times of encapsulation enterprise Business.
Chinese patent literature CN102418011A discloses a kind of bonding gold wire, adds silver in the spun gold, is additionally added member One or more of in plain Ca, Pd, Cu, In, Sn, Ni, La, Sc, Ce, wherein weight percentage silver-colored in bonding gold wire is 10%-25%, golden weight percentage are about 74%-89%.The technical scheme is still using gold as base material, and the cost of bonding wire is still It is very high.
Chinese patent literature CN101569968B discloses a kind of silver alloy bonding wire of packaging conductive wire, the silver alloy bonding wire Constituent include：Percentage by weight is 90.00~99.99% silver-colored composition；Percentage by weight be 0.0001~ 9.9997% golden composition；And the copper component that percentage by weight is 0.0001~9.9997%.Silver described in the technical scheme The welding effect of alloy bonding wire is undesirable, easily breaks under high speed bonding conditions.
How the above analysis, provide that a kind of cost is cheap, bonding performance is excellent, is not broken under high speed bonding conditions Bonding wire and its production technology are in the prior art also without the technical barrier solved.
The content of the invention
Therefore, the technical problems to be solved by the invention are to provide, a kind of cost is cheap, bonding performance is excellent, high speed key Do not broken under the conditions of conjunction, the bonding wire that mechanical performance is strong and preparation method thereof.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
The present invention provides a kind of alloy bonding silk, and the alloy bonding silk includes：Golden 5-10wt%, aluminium 1-5wt%, nickel 0.5- 5wt%, remaining is purity >=99.999wt% silver.
As a preferred embodiment, the present invention provides a kind of alloy bonding silk, the composition and weight content of the alloy bonding silk are： Golden 6-9wt%, aluminium 2-4wt%, nickel 1-4wt%, remaining is purity >=99.999wt% silver.
As a preferred embodiment, the present invention provides a kind of alloy bonding silk, the composition and weight content of the alloy bonding silk are： Golden 7-8wt%, aluminium 3wt%, nickel 2-3wt%, remaining is purity >=99.999wt% silver.
As a preferred embodiment, the alloy bonding silk also adds one kind or therein several in Ca, Se, Rh, Be, Co, In Kind.
As a preferred embodiment, Ca, Se, Rh, Be, Co, In that the alloy bonding silk addition weight content is 1-120ppm In one kind or therein several.
As a preferred embodiment, Ca, 1-20ppm Se, 1- that the alloy bonding silk addition weight content is 1-20ppm 20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In.
The present invention also provides a kind of method for preparing above-mentioned alloy bonding silk, and methods described comprises the following steps：
(1) raw metal silver, gold, aluminium, nickel are placed in smelting furnace and carry out founding, so that silver alloy ingot bar is made；
(2) by step（1）Manufactured silver alloy ingot bar carries out Wire Drawing, forms the silver alloy wire rod of predetermined line footpath；
(3) by step（2）Manufactured silver alloy wire rod carries out annealing process processing, and required alloy bonding silk is made.
Wherein, methods described step（1）Middle raw metal is：Golden 5-10wt%, aluminium 1-5wt%, nickel 0.5-5wt%, remaining is Purity >=99.999wt% silver；It is preferred that golden 6-9wt%, aluminium 2-4wt%, nickel 1-4wt%, remaining is purity >=99.999wt% silver； Golden 7-8wt%, aluminium 3wt%, nickel 2-3wt% are more selected, remaining is purity >=99.999wt% silver.
As a preferred embodiment, methods described step（1）In also comprising adding trace meter raw materials of Ca, Se, Rh, Be, Co, In In one kind or several carry out foundings therein.
As a preferred embodiment, methods described step（1）In also comprising add weight content be 1-20ppm Ca, 1-20ppm Se, 1-20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In carries out founding.
Methods described step（3）Silver alloy wire rod after middle annealing process processing also carries out wire winding processing.
Silver alloy wire rod after the wire winding processing is also packaged PROCESS FOR TREATMENT.
The step（2）In drawing process include it is rough, middle draw, it is thin draw, ultra tiny stretching.
The step（3）In annealing process processing include finished products, performance test process.
Alloy bonding silk prepared by any of the above-described kind of alloy bonding silk or any of the above-described kind of method has for packaging conductive wire Purposes.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
1. alloy bonding silk provided by the invention, based on high-purity silver material, the minor element such as addition gold, aluminium, nickel, may be used also One kind or therein several in minor metallic element Ca, Se, Rh, Be, Co, In is added, and by reasonable analysis and repeatedly The optimum content of every kind of addition element is selected after experiment so that the interphase interaction of each element of alloy, be optimal effect Fruit.Experiment proves that mechanical performance, the physical property of alloy bonding silk of the invention are better than the conventional keys alloy of equal line footpath Silk, and the material cost of the alloy bonding silk of the present invention is only the 1/8 of gold wire rod, macromarketing price is only same specification gold thread 1/5, greatly reduce the manufacturing cost of LED and IC package.
The bonding performance of alloy bonding silk provided by the invention is excellent, and under pure nitrogen gas protective condition, any weldering can be achieved Connection technology requirement, including ball bonding is planted, meet every welding test request, properties exceed bonding gold wire.
Alloy bonding silk provided by the invention is not easy fracture of wire, a little higher than conventional keys alloy of outage under high speed bonding conditions Silk thread, and the mechanical performance of the alloy bonding silk of the present invention of fine line diameter is equal to or is better than traditional bonding wire in thick line footpath.
The inoxidizability of alloy bonding silk provided by the invention is more preferable compared to fine silver bonding wire, and plant ball bonding can be achieved will Ask.Alloy bonding silk provided by the invention is compared with bonding gold wire：Price is cheaper, stable performance, breaks Li Genggao.
Alloy bonding silk provided by the invention can be used as packaging conductive wire, is satisfied with a variety of encapsulation and requires, is not only suitable for integrating Circuit, large scale integrated circuit miniaturization encapsulation, are also applied for discrete device, LED encapsulation.
2. alloy bonding silk preparation method provided by the invention, including raw metal silver, gold, aluminium, nickel are placed in smelting furnace Middle carry out founding, the step of so that silver alloy ingot bar is made；Silver alloy ingot bar is subjected to Wire Drawing, forms the silver conjunction of predetermined line footpath The step of gold thread material；By manufactured silver alloy wire rod carry out annealing process processing, be made needed for alloy bonding silk the step of.This hair The alloy bonding silk preparation method of bright offer is convenient and practical.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, embodiments of the present invention are made below into One step it is described in detail.
Embodiment 1：
The present invention provides a kind of alloy bonding silk, and the composition and weight content of the alloy bonding silk are：5N gold 5wt%, aluminium 2wt%, nickel 1wt%, 5N silver 91.99wt%, trace meter raw material about 0.01wt%；
Trace meter raw material addition content is as follows：
5ppm≤calcium≤20ppm
2ppm≤rhodium≤10ppm
20ppm≤beryllium≤50ppm
5ppm≤cobalt≤10ppm
3ppm≤indium≤10ppm
5ppm≤selenium≤10ppm.
Wherein, 5N gold refers to the gold that purity is 99.999%；5N silver refers to the silver that purity is 99.999%.
The present invention also provides the preparation method of above-mentioned alloy bonding silk, and this method comprises the following steps：
1）The mother metal that silver, gold, aluminium, nickel and minor metallic element form is placed in smelting furnace and carries out founding, so that silver is made Alloy ingot；
Always feed intake 1000g, wherein 5N ag materials, content 91.99wt%, counts 919.9g；5N gold 5wt%, count 50g；Aluminium 2wt%, count 20g；Nickel 1wt%, count 10g；Trace meter raw material 0.01wt% is added, counts 0.1g;
Trace meter raw material addition content is as follows：
5ppm≤calcium≤20ppm
2ppm≤rhodium≤10ppm
20ppm≤beryllium≤50ppm
5ppm≤cobalt≤10ppm
3ppm≤indium≤10ppm
5ppm≤selenium≤10ppm
2）By step（1）Manufactured silver alloy ingot bar carries out Wire Drawing, forms the silver alloy wire rod of predetermined line footpath；
3）By step（2）Manufactured silver alloy wire rod carries out annealing process processing, and required alloy bonding silk is made.
Wherein, in alloy bonding silk preparation method of the present invention,
Step（1）The mother metal that metallic element forms is placed in smelting furnace and carries out founding, the fusion-casting process can be true Carried out under empty condition.
Step（2）In drawing process include it is middle draw, it is thin draw, ultra tiny stretching, alloy wire is stretched to preset lines Footpath.Such as after the completion of the casting of silver alloy wire rod, carry out line footpath stretching, first pass around the first thick wire drawing machine stretching, by line footpath by 8mm is stretched to 1mm, draw speed 0.1m/s, then by silver alloy wire rod sequentially by the second thin wire drawing machine, superfine wire drawing machine, And the thin wire drawing machine stretching of super, wherein, the second thin wire drawing machine（Such as the SS21BC of Japanese SKAWA companies production）By wire rod by 1mm is stretched to 0.1mm, draw speed 0.5m/s, superfine wire drawing machine（Such as the WSS21BC of Japanese SKAWA productions）By wire rod 0.05mm, draw speed 1m/s, and the thin wire drawing machine of super are stretched to by 0.1（Such as the WSS21BC of Japanese SKAWA productions） Silver alloy wire rod is further stretched as predetermined 23 μm of line footpath, 25 μm of specific silver alloy bonding wire, the speed of stretching is 3-6m/ s。
Step（3）In annealing process processing include finished products, performance test processing procedure.
Mechanical performance comparison of annealing is as follows
The alloy bonding silk physical property of embodiment 1：
Alloy melting point 1080℃
Density g/cm3 10.7
Resistivity μ Ω cm 2.8
Hardness Hv 35-38
Annealing temperature 400-600℃
Wire color Silvery white
Above-mentioned alloy bonding silk is packaged PROCESS FOR TREATMENT, bonding packaging parameter is：
Wire rod title Bonding gold wire The wire rod of embodiment 1
Equipment KS KS
Bonding power (W) 160 165
Welding pressure (N) 95 95
Weld fluency OK OK
Crater pass pass
Bonding wire breaks power (cN) ≥5cN ≥7cN
Soldered ball thrust（N） ≥30 ≥30
Whether ball bonding is planted Plant ball Plant ball
Bonding wire broken string number（Work 4 hours） 1-2 times 4-5 times
Aging Without defective products Without defective products
Thermal shock Without defective products Without defective products
Conclusion OK OK
Embodiment 2：
The alloy bonding silk of the present invention, always feed intake 1000g, 5N ag materials, content 90.49wt%, counts 904.9g;5N gold 8wt%, count 80g;Aluminium 1wt%, count 10g;Nickel 0.5wt%, count 5g;Trace meter raw material 0.01wt% is added, counts 0.1g;Alloy adds Content the following is：
5ppm≤calcium≤20ppm
2ppm≤rhodium≤10ppm
20ppm≤beryllium≤50ppm
5ppm≤cobalt≤10ppm
3ppm≤indium≤18ppm
The present invention also provides the preparation method of above-mentioned alloy bonding silk, and this method comprises the following steps：
1）The mother metal that silver, gold, aluminium, nickel and minor metallic element form is placed in smelting furnace and carries out founding, so that silver is made Alloy ingot；
Always feed intake 1000g, and always feed intake 1000g, 5N ag materials, content 90.49wt%, counts 904.9g;5N gold 8wt%, meter 80g;Aluminium 1wt%, count 10g;Nickel 0.5wt%, count 5g;Trace meter raw material 0.01% is added, counts 0.1g;Alloy addition content is as follows For：
5ppm≤calcium≤20ppm
2ppm≤rhodium≤10ppm
20ppm≤beryllium≤50ppm
5ppm≤cobalt≤10ppm
3ppm≤indium≤18ppm
2）By step（1）Manufactured silver alloy ingot bar carries out Wire Drawing, forms the silver alloy wire rod of predetermined line footpath；
3）By step（2）Manufactured silver alloy wire rod carries out annealing process processing, and required alloy bonding silk is made.
Mechanical performance comparison of annealing is as follows
The 2-in-1 gold bonding silk physical property of embodiment：
Alloy melting point 1100℃
Density g/cm3 10.9
Resistivity μ Ω cm 2.7
Hardness Hv 37-40
Annealing temperature 400-600℃
Wire color Silvery white
Bonding packing parameter
Wire rod title Bonding gold wire The wire rod of embodiment 2
Equipment KS KS
Bonding power（W） 170 175
Welding pressure（N） 95 95
Weld fluency OK OK
Crater pass pass
Bonding wire breaks power (cN) ≥5cN ≥7cN
Soldered ball thrust ≥30 ≥30
Whether ball bonding is planted Plant ball Plant ball
Bonding wire broken string number（Work 4 hours） 1-2 times 6-7 times
Aging Without defective products Without defective products
Thermal shock Without defective products Without defective products
Conclusion OK OK
Embodiment 3：
The alloy bonding silk of the present invention, always feed intake 1000g, 5N ag materials, content 79.99wt%, counts 799.9g;5N gold 10wt%, count 100g;Aluminium 5wt%, count 50g;Nickel 5wt%, count 50g;Trace meter raw material 0.01wt% is added, counts 0.1g;Alloy adds Content is added to the following is：
5ppm≤calcium≤10ppm
5ppm≤rhodium≤20ppm
20ppm≤beryllium≤50ppm
10ppm≤cobalt≤20ppm
2ppm≤indium≤5ppm
The present invention also provides the preparation method of above-mentioned alloy bonding silk, and this method comprises the following steps：
1）The mother metal that silver, gold, aluminium, nickel and minor metallic element form is placed in smelting furnace and carries out founding, so that silver is made Alloy ingot；
Always feed intake 1000g, 5N ag materials, content 79.99wt%, counts 799.9g;5N gold 10wt%, count 100g;Aluminium 5wt%, Count 50g;Nickel 5wt%, count 50g;Trace meter raw material 0.01% is added, counts 0.1g;Alloy addition content the following is：
5ppm≤calcium≤10ppm
5ppm≤rhodium≤20ppm
20ppm≤beryllium≤50ppm
10ppm≤cobalt≤20ppm
2ppm≤indium≤5ppm
2）By step（1）Manufactured silver alloy ingot bar carries out Wire Drawing, forms the silver alloy wire rod of predetermined line footpath；
3）By step（2）Manufactured silver alloy wire rod carries out annealing process processing, and required alloy bonding silk is made.
Mechanical performance comparison of annealing is as follows
The alloy bonding silk physical property of embodiment 3：
Alloy melting point 1100℃
Density g/cm3 10.9
Resistivity μ Ω cm 2.7
Hardness Hv 37-40
Annealing temperature 400-600℃
Wire color Silvery white
Bonding packing parameter
Wire rod title Bonding gold wire The wire rod of embodiment 3
Equipment KS KS
Bonding power（W） 170 175
Welding pressure（N） 95 95
Weld fluency OK OK
Crater pass pass
Bonding wire breaks power (cN) ≥5cN ≥7cN
Soldered ball thrust ≥30 ≥30
Whether ball bonding is planted Plant ball Plant ball
Bonding wire broken string number（Work 4 hours） 1-2 times 6-8 times
Aging Without defective products Without defective products
Thermal shock Without defective products Without defective products
Conclusion OK OK
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or Among changing still in protection scope of the present invention.

Claims (24)

  1. A kind of 1. alloy bonding silk, it is characterised in that：The alloy bonding silk includes：Golden 5-10wt%, aluminium 1-5wt%, nickel 0.5- 5wt%, remaining is purity >=99.999wt% silver.
  2. 2. alloy bonding silk according to claim 1, it is characterised in that：The alloy bonding silk includes：Golden 6-9wt%, Aluminium 2-4wt%, nickel 1-4wt%, remaining is purity >=99.999wt% silver.
  3. 3. alloy bonding silk according to claim 1, it is characterised in that：The composition and content of the alloy bonding silk be： Golden 7-8wt%, aluminium 3wt%, nickel 2-3wt%, remaining is purity >=99.999wt% silver.
  4. 4. according to the alloy bonding silk described in claim 1-3 any one, it is characterised in that：The alloy bonding silk also adds One kind or therein several in Ca, Se, Rh, Be, Co, In.
  5. 5. according to the alloy bonding silk described in claim 1-3 any one, it is characterised in that：The alloy bonding silk addition weight Measure one kind or therein several in Ca, Se, Rh, Be, Co, In that content is 1-120ppm.
  6. 6. alloy bonding silk according to claim 4, it is characterised in that：The alloy bonding silk addition weight content is 1- One kind or therein several in 120ppm Ca, Se, Rh, Be, Co, In.
  7. 7. according to the alloy bonding silk described in claim 1-3,6 any one, it is characterised in that：The alloy bonding silk addition Weight content is 1-20ppm Ca, 1-20ppm Se, 1-20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In.
  8. 8. alloy bonding silk according to claim 4, it is characterised in that：The alloy bonding silk addition weight content is 1- 20ppm Ca, 1-20ppm Se, 1-20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In.
  9. 9. alloy bonding silk according to claim 5, it is characterised in that：The alloy bonding silk addition weight content is 1- 20ppm Ca, 1-20ppm Se, 1-20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In.
  10. A kind of 10. method for preparing alloy bonding silk described in claim 1-9 any one, it is characterised in that：Methods described bag Include following steps：
    (1) raw metal silver, gold, aluminium, nickel are placed in smelting furnace and carry out founding, so that silver alloy ingot bar is made；Wherein, the gold Category raw material includes：Golden 5-10wt%, aluminium 1-5wt%, nickel 0.5-5wt%, remaining is purity >=99.999wt% silver；
    (2) silver alloy ingot bar made of step (1) is subjected to Wire Drawing, forms the silver alloy wire rod of predetermined line footpath；
    (3) silver alloy wire rod made of step (2) is subjected to annealing process processing, required alloy bonding silk is made.
  11. 11. alloy bonding silk preparation method according to claim 10, it is characterised in that：In methods described step (1) also Include the one kind or several carry out foundings therein added in trace meter raw materials of Ca, Se, Rh, Be, Co, In.
  12. 12. the alloy bonding silk preparation method according to claim 10 or 11, it is characterised in that：Methods described step (1) In also comprising add weight content be 1-20ppm Ca, 1-20ppm Se, 1-20ppm Rh, 1-20ppm Be, 1-20ppm Co, 1-20ppm In carries out founding.
  13. 13. the alloy bonding silk preparation method according to claim 10 or 11, it is characterised in that：Methods described step (3) Silver alloy wire rod after middle annealing process processing also carries out wire winding processing.
  14. 14. alloy bonding silk preparation method according to claim 12, it is characterised in that：Methods described step is moved back in (3) Silver alloy wire rod after ignition technique processing also carries out wire winding processing.
  15. 15. alloy bonding silk preparation method according to claim 13, it is characterised in that：After the wire winding processing Silver alloy wire rod is also packaged PROCESS FOR TREATMENT.
  16. 16. alloy bonding silk preparation method according to claim 14, it is characterised in that：After the wire winding processing Silver alloy wire rod is also packaged PROCESS FOR TREATMENT.
  17. 17. the alloy bonding silk preparation method according to claim any one of 10-11 or 14-16, it is characterised in that：It is described Drawing process in step (2) includes rough, middle drawing, thin drawing, ultra tiny stretching.
  18. 18. alloy bonding silk preparation method according to claim 12, it is characterised in that：Wire drawing in the step (2) Technique includes rough, middle drawing, thin drawing, ultra tiny stretching.
  19. 19. alloy bonding silk preparation method according to claim 13, it is characterised in that：Wire drawing in the step (2) Technique includes rough, middle drawing, thin drawing, ultra tiny stretching.
  20. 20. the alloy bonding silk preparation method according to claim any one of 10-11 or 14-16 or 18-19, its feature exist In：Annealing process processing in the step (3) includes finished products, performance test process.
  21. 21. alloy bonding silk preparation method according to claim 12, it is characterised in that：Annealing in the step (3) PROCESS FOR TREATMENT includes finished products, performance test process.
  22. 22. alloy bonding silk preparation method according to claim 13, it is characterised in that：Annealing in the step (3) PROCESS FOR TREATMENT includes finished products, performance test process.
  23. 23. alloy bonding silk preparation method according to claim 17, it is characterised in that：Annealing in the step (3) PROCESS FOR TREATMENT includes finished products, performance test process.
  24. 24. conjunction prepared by any one of alloy bonding silk or claim 7-13 described in claim any one of 1-9 methods described Gold bonding silk can be used for the purposes of packaging conductive wire.
CN201410054839.3A 2014-02-18 2014-02-18 A kind of alloy bonding silk and preparation method and application Active CN103789568B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410054839.3A CN103789568B (en) 2014-02-18 2014-02-18 A kind of alloy bonding silk and preparation method and application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410054839.3A CN103789568B (en) 2014-02-18 2014-02-18 A kind of alloy bonding silk and preparation method and application

Publications (2)

Publication Number Publication Date
CN103789568A CN103789568A (en) 2014-05-14
CN103789568B true CN103789568B (en) 2018-02-23

Family

ID=50665619

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410054839.3A Active CN103789568B (en) 2014-02-18 2014-02-18 A kind of alloy bonding silk and preparation method and application

Country Status (1)

Country Link
CN (1) CN103789568B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669335B1 (en) * 2014-09-26 2015-02-12 田中電子工業株式会社 Silver-gold alloy bonding wire
CN104810450A (en) * 2015-03-31 2015-07-29 长治虹源光电科技有限公司 Light emitting diode (LED) packaging technology based on silver alloy wires
CN108598006B (en) * 2017-12-27 2020-05-19 汕头市骏码凯撒有限公司 Silver alloy bonding wire and manufacturing method thereof
CN108183075B (en) * 2017-12-27 2020-05-19 汕头市骏码凯撒有限公司 Silver alloy bonding wire and manufacturing method thereof
CN111489975A (en) * 2020-04-23 2020-08-04 南通大学 Method for manufacturing aluminum-nickel semiconductor lead

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102214630A (en) * 2011-05-18 2011-10-12 苏州衡业新材料科技有限公司 Silver-base microalloy bonding wire and preparation method thereof
CN102437136A (en) * 2011-11-16 2012-05-02 浙江佳博科技股份有限公司 Bonding alloy wire and production technology thereof
CN102776408A (en) * 2012-08-16 2012-11-14 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof
CN102912176A (en) * 2012-09-21 2013-02-06 宁波康强电子股份有限公司 High-end packaging silver alloy bonding wire and method for manufacturing same
CN103131885A (en) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 Silver bond wire for semiconductor devices
CN103194637A (en) * 2013-04-27 2013-07-10 烟台招金励福贵金属股份有限公司 Bonding alloy filamentary silver and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001700B1 (en) * 2007-03-30 2010-12-15 엠케이전자 주식회사 Ag-base alloy for semiconductor package
US20090191088A1 (en) * 2008-01-28 2009-07-30 Lee Jun-Der Manufacturing method for a composite metal bonding wire and products thereof
US20090297391A1 (en) * 2008-05-28 2009-12-03 Lee Jun-Der Manufacturing method for a silver alloy bonding wire and products thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102214630A (en) * 2011-05-18 2011-10-12 苏州衡业新材料科技有限公司 Silver-base microalloy bonding wire and preparation method thereof
CN102437136A (en) * 2011-11-16 2012-05-02 浙江佳博科技股份有限公司 Bonding alloy wire and production technology thereof
CN103131885A (en) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 Silver bond wire for semiconductor devices
CN102776408A (en) * 2012-08-16 2012-11-14 烟台一诺电子材料有限公司 Silver alloy wire and preparation method thereof
CN102912176A (en) * 2012-09-21 2013-02-06 宁波康强电子股份有限公司 High-end packaging silver alloy bonding wire and method for manufacturing same
CN103194637A (en) * 2013-04-27 2013-07-10 烟台招金励福贵金属股份有限公司 Bonding alloy filamentary silver and preparation method thereof

Also Published As

Publication number Publication date
CN103789568A (en) 2014-05-14

Similar Documents

Publication Publication Date Title
CN103789568B (en) A kind of alloy bonding silk and preparation method and application
CN102437136B (en) Bonding alloy wire and production technology thereof
CN102776405B (en) Preparation method of bonded gold-silver alloy wire
CN103194637B (en) Bonding alloy filamentary silver and preparation method thereof
CN105803245B (en) A kind of high-performance bonding alloy wire and preparation method and application
CN105463237B (en) A kind of Kufil bonding wire and preparation method thereof
CN102418001A (en) Bonding gold wire and preparation method thereof
CN1949493A (en) Bonded copper wire and preparing method thereof
CN106992164B (en) A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof
CN104388861B (en) A kind of polycrystalline series LED manufacture method of fine silver billon bonding line
CN105132735A (en) Ultra-thin copper alloy bonding wire for microelectronic packaging and preparing method of ultra-thin copper alloy bonding wire
CN109003903A (en) A kind of bonding gold wire and preparation method thereof
CN109930020A (en) A kind of bonding alloy wire and its preparation and application
CN103199073A (en) Silver palladium alloy monocrystal bonding wire and manufacturing method thereof
CN107904434B (en) Ultra-fine and ultra-long copper alloy wire and production method thereof
CN104377185A (en) Gold-plated palladium-silver alloy single crystal bonding wire and manufacturing method thereof
CN103779309A (en) Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof
CN102509724A (en) Copper-based bonding wire and preparation method thereof
JP3579603B2 (en) Ultrafine wire made of gold alloy for contacting semiconductor components and method of manufacturing the same
CN110066938A (en) A kind of wire for microencapsulated
CN110284023B (en) Copper alloy bonding wire and preparation method and application thereof
CN104299954B (en) A kind of copper cash for semiconductor welding
CN108231600B (en) Processing method of bonding copper wire for packaging
CN106486447A (en) Copper alloy bonding wire
CN103834832A (en) Imitation gold bonding alloy wire and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant