CN109930020A - A kind of bonding alloy wire and its preparation and application - Google Patents
A kind of bonding alloy wire and its preparation and application Download PDFInfo
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- CN109930020A CN109930020A CN201910368456.6A CN201910368456A CN109930020A CN 109930020 A CN109930020 A CN 109930020A CN 201910368456 A CN201910368456 A CN 201910368456A CN 109930020 A CN109930020 A CN 109930020A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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Abstract
The present invention relates to a kind of bonding alloy wire and its preparations and application, belong to bonding wire processing technique field.The constituent of bonding alloy wire of the present invention is based on mass fraction, including silver 92%~99%, palladium 0.5%~4%, copper 0.1-2%, golden 0.1-2%, gallium 20-200PPM, cerium 20-200PPM, platinum 20-200PPM, lanthanum 20-200PPM, after founding and wire drawing, the bonding alloy wire of diameter of section≤50 μm is made；The present invention adds alloying element based on high-purity silver material, and the bonding wire with smaller elongation percentage floating range has been made, and reduces abnormal short-term frequency, improves bonding production capacity and equipment mobility；Suitable for integrated circuit, large scale integrated circuit micromation encapsulation, it is also applied for discrete device, LED encapsulation；The bonding alloy wire preparation method is simple, and practicability is good.
Description
Technical field
The present invention relates to a kind of bonding alloy wire and its preparations and application, belong to bonding wire processing technique field.
Background technique
Bonding wire for packaging semiconductor is one of basic material of Packaging Industry, it decides the developing water of integrated circuit
Flat, alloy wire required for bonding gold wire needs to have that mechanical strength is good, and balling-up characteristic is good, and zygosity is good, is easy to operation and weldering
The characteristic connect.
The bonding wire that tradition uses is a kind of high-purity spun gold of microalloying, commonly uses alkaline-earth metal, rare metal and rare earth gold
Category, transition metal are added high-purity Au with total mass fraction 0.0001%-0.01% and are made, but in recent years, gold market value one
Road is risen violently, and is increased 140% less than ten years gold cost of material, to the producer for using bonding gold wire, is increased heavy
The cost of raw material, while also considerably increasing the production and carrying cost of bonding gold wire production firm.
In terms of research and development, as sophisticated semiconductor encapsulation technology enters China's Mainland, to continent, bonding gold wire manufacturer is also mentioned
Gone out higher requirement, bonding gold wire electrical parameter, intensive parameter, balling-up parameter etc. require it is higher and higher, and due to wrapper
The continuous reduction of part size, conventional bonding gold wire have had reached its capacity limit, and thinner, intensity that this requires diameters is more
High alloy wire adapts to the packaging of ultra-fine spacing, this is resulted in, and bonding wire is in bonding process or in application process,
Bank performance is unstable, is easy to appear abnormal fracture, causes bonding production capacity low, equipment mobility is low.
Alloy-type gold wire bonding spun gold, gold and silver can be infinitely dissolved in liquid and solid-state, significantly improve bonding gold wire
Intensity, anti-vibration are broken function admirable, and when bonding gold wire synthesis of cyclic, ball neck will not be broken, and chip will not be because of
Ball is soft and ruptures, and existing Chinese patent literature CN103194637A discloses a kind of bonding alloy filamentary silver, silver-colored < 90wt%,
Golden 3.0wt%-10.0wt%, palladium 3.0wt%-8.0wt% obtain alloy conductive ability is strong, have certain inoxidizability,
Good plasticity, higher fracture load and preferable elongation, still, in actual bonding process and use process,
Still higher broken string frequency is inevitably generated.
Summary of the invention
Therefore, the present invention is unstable in order to solve bonding wire bank performance in the prior art, and the high technology of broken string frequency is asked
Topic discloses a kind of bonding alloy wire and its preparation and application.
The invention discloses a kind of alloy composites, in terms of the gross mass of the alloy composite, comprising: and silver 92%~
99.3wt%, 0.5%~4wt% of palladium, copper 0.1-2wt%, golden 0.1-2wt%, gallium 20-200PPM, cerium 20-200PPM, platinum 20-
200PPM, lanthanum 20-200PPM.
Preferably, 94%~98wt% of silver, 1%~3wt% of palladium, copper 0.5-1.5wt%, golden 0.5-1.5wt%, gallium 100-
150PPM, cerium 100-150PPM, platinum 100-150PPM, lanthanum 100-150PPM.
Preferably, silver 95%, palladium 3%, copper 1%, gold 1%, gallium 100PPM, cerium 100PPM, platinum 100PPM, lanthanum 100PPM.
Preferably, the purity of the silver, copper and gold is 99.99%.
The invention also discloses a kind of alloy wire, alloy wire diameter of section≤50 μm, by the alloy composite
It is prepared.
The invention also discloses a kind of preparation methods of alloy wire, comprising the following steps:
Founding step: the base material that silver-based material and other alloying elements form is subjected to founding, bar is made；
Drawing step: the bar is subjected to wire drawing, is drawn to the fine silk material of required size；
Annealing steps: the fine silk material is subjected to annealing process and is handled up to required bonding wire.
Preferably, the annealing process is under hydrogen-nitrogen mixture gas protection, and annealing temperature is 450-550 DEG C, annealing speed
It is 55-65 ms/min.
Preferably, the volume ratio of hydrogen and nitrogen is 1:19 in the hydrogen-nitrogen mixture gas.
The invention also discloses a kind of bonding alloy wire, it is prepared by the alloy composite or by the alloy wire system
It is prepared at or by the alloy wire preparation method.
The invention also discloses a kind of alloy composite, the alloy wire, the alloy wire preparation methods to prepare
Alloy wire, the bonding alloy wire integrated antenna package field application.
Technical solution of the present invention has the advantages that
1. alloy composite of the present invention, the silver for being 92-99% including mass fraction, mass fraction are 0.1-2%'s
Copper, mass fraction are the gold of 0.1-2%, and mass fraction is the palladium of 0.5-4%, firstly, the content of copper is reduced by increasing palladium,
The mechanical performance and bonding performance for balancing bonding alloy wire show that then the visible bonding alloy wire ductility is floated in parameter
Rate is small, and when bonding, bank performance is stablized, and broken string frequency is low, and bonding apparatus mobility is high；Secondly, silver point is 960.5 DEG C,
The fusing point of copper is 1083 DEG C, and golden fusing point is 1063 DEG C, and the fusing point of palladium is 1554 DEG C, and gold, silver, copper and palladium are easy to founding and solid solution
Alloy is produced, hardness, the plasticity of the alloy of generation are increased, and reduces the life of semiconductor on the basis of not undermining alloy property
Produce cost；Minor metallic element gallium (Ga), copper and palladium therein interact, and can improve the tensile strength 10% of manufactured alloy
More than；The addition of minor metallic element platinum (Pt), can significantly improve the heat resistance of the alloy of generation, improve as alloy wire into
Resistance to mobility when row encapsulation；The addition of minor metallic element cerium (Ce) and lanthanum (La), can refine the crystalline substance in the alloy of generation
Grain increases bonding ball neck intensity.
2. alloy wire made of alloy composite of the present invention, mechanical strong relative to fine silver line, gold line or pure copper wire
It spends, zygosity is good, is easy to the characteristic of operation and welding, and balling-up is good, and gas shield is added can avoid sliding ball to greatest extent
Phenomenon generates；And opposite gold line and fine silver line, copper is added, under the premise of promoting tension intensity, saves significantly on cost,
Alloy wire of the present invention as bonding gold wire when encapsulating semiconductor since elongation percentage floating range is small, extension property stablize,
Broken string frequency can be substantially reduced when bonding, reduce shutdown adjustment time when bonding, the mobility and bonding production capacity of lifting means.
3. the preparation method of alloy wire of the present invention is easy to operate, practicability is good, is easy to produce in batches.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is tensile test schematic diagram in test example 1 of the present invention；
Description of symbols: 1, plate body；11, the first solder joint；12, chip；13, upper sheet；2, frame；21, the second solder joint；
22, frame pin；3, bank；4, metal hooks.
Specific embodiment
There is provided following embodiments is to preferably further understand the present invention, it is not limited to the best embodiment party
Formula is not construed as limiting the contents of the present invention and protection scope, anyone under the inspiration of the present invention or by the present invention and its
The feature of his prior art is combined and any and identical or similar product of the present invention for obtaining, all falls within of the invention
Within protection scope.
Specific experiment step or condition person are not specified in embodiment, according to the literature in the art described routine experiment
The operation of step or condition can carry out.Reagents or instruments used without specified manufacturer, being can be by commercially available acquisition
Conventional products.
Embodiment 1
A kind of specific embodiment of bonding gold wire is present embodiments provided, as described below:
Founding step: the silver-colored 993g that investment purity is 99.99% in crucible, the palladium 5g that purity is 99.99%, purity are
99.99% golden 1g, copper 1g, gallium 20PPM, cerium 20PPM, platinum 20PPM, the lanthanum 20PPM that purity is 99.99%, by above-mentioned each group
It is being higher than 9.8 × 10 after dividing mixing-4Melting under Pa vacuum degree, and alloy bar material is made, the temperature of vacuum melting is 1100 DEG C, institute
State alloy bar material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 50 μm of fine silk material to get the conjunction to diameter is carefully drawn into
Spun gold；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the bonding alloy wire.
Embodiment 2
A kind of specific embodiment of bonding gold wire is present embodiments provided, as described below:
Founding step: the silver-colored 980g that investment purity is 99.99% in crucible, the palladium 10g that purity is 99.99%, purity are
99.99% golden 5g, copper 5g, gallium 100PPM, cerium 100PPM, platinum 100PPM, the lanthanum 100PPM that purity is 99.99%, will be above-mentioned
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after each component mixing, and alloy bar material is made, the temperature of vacuum melting is 1200
DEG C, alloy bar material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 20 μm of fine silk material to get the conjunction to diameter is carefully drawn into
Spun gold；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 450 DEG C, and annealing speed is that 55m/min obtains the bonding alloy wire.
Embodiment 3
A kind of specific embodiment of bonding gold wire is present embodiments provided, as described below:
Founding step: the silver-colored 950g that investment purity is 99.99% in crucible, the palladium 30g that purity is 99.99%, purity are
99.99% golden 10g, copper 10g, gallium 120PPM, cerium 120PPM, platinum 120PPM, the lanthanum 120PPM that purity is 99.99%, will be upper
It is being higher than 9.8 × 10 after stating each component mixing-4Melting under Pa vacuum degree, and alloy bar material is made, the temperature of vacuum melting is
1150 DEG C, alloy bar material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 23 μm of fine silk material to get the conjunction to diameter is carefully drawn into
Spun gold；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the bonding alloy wire.
Embodiment 4
A kind of specific embodiment of bonding gold wire is present embodiments provided, as described below:
Founding step: the silver-colored 940g that investment purity is 99.99% in crucible, the palladium 30g that purity is 99.99%, purity are
99.99% golden 15g, copper 15g, gallium 150PPM, cerium 150PPM, platinum 150PPM, the lanthanum 150PPM that purity is 99.99%, will be upper
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after each component mixes is stated, and alloy bar material is made, the temperature of vacuum melting is
1100 DEG C, alloy bar material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 20 μm of fine silk material to get the conjunction to diameter is carefully drawn into
Spun gold；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 550 DEG C, and annealing speed is that 65m/min obtains the bonding alloy wire.
Embodiment 5
A kind of specific embodiment of bonding gold wire is present embodiments provided, as described below:
Founding step: the silver-colored 920g that investment purity is 99.99% in crucible, the palladium 40g that purity is 99.99%, purity are
99.99% golden 20g, copper 20g, gallium 20PPM, cerium 20PPM, platinum 20PPM, the lanthanum 20PPM that purity is 99.99%, will be above-mentioned each
The melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after component mixing, and alloy bar material is made, the temperature of vacuum melting is 1200
DEG C, alloy bar material diameter 8mm；
Drawing step: wire drawing is carried out to the alloy bar material, forms the alloy wire of predetermined line footpath；By it is rough,
It is middle to draw, thin draw, ultra-fine draw bar from thickIt is 30 μm of fine silk material to get the conjunction to diameter is carefully drawn into
Spun gold；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the bonding alloy wire.
Comparative example 1
This comparative example provides a kind of specific embodiment of bonding wire, includes the following steps:
Founding step: silver-colored 1000g, gallium 100PPM, cerium 100PPM, the platinum 100PPM that investment purity is 99.99% in crucible,
Lanthanum 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made, vacuum melting
Temperature be 1200 DEG C, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of filamentary silver to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the fine silver bonding wire.
Comparative example 2
This comparative example provides a kind of specific embodiment of bonding wire, includes the following steps:
Founding step: golden 1000g, gallium 100PPM, cerium 100PPM, the platinum 100PPM that investment purity is 99.99% in crucible,
Lanthanum 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made, vacuum melting
Temperature be 1200 DEG C, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of spun gold to diameter is carefully drawn into；
Annealing steps: the volume ratio in hydrogen and nitrogen be 1:19 hydrogen-nitrogen mixture gas in the fine silk material into
Row annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the proof gold bonding wire.
Comparative example 3
This comparative example provides a kind of specific embodiment of bonding wire, includes the following steps:
Founding step: copper 1000g, gallium 100PPM, cerium 100PPM, the platinum 100PPM that investment purity is 99.99% in crucible,
Lanthanum 100PPM, the melting in the case where being higher than 9.8 × 10-4Pa vacuum degree after above-mentioned each component is mixed, and bar is made, vacuum melting
Temperature be 1200 DEG C, vacuum degree be higher than 9.8 × 10-4Pa, diameter of rod 8mm；
Drawing step: wire drawing is carried out to the bar, forms the wire rod of predetermined line footpath；It is drawn, carefully by rough, middle
It draws, ultra-fine draw bar from thickIt is 20 μm of copper wire to diameter is carefully drawn into；
Annealing steps: the fine silk material is carried out in the hydrogen-nitrogen mixture gas that the volume ratio of hydrogen and nitrogen is 1:19
Annealing, the temperature of annealing are 500 DEG C, and annealing speed is that 60m/min obtains the fine copper bonding wire.
Experimental example 1
Tensile test, test method: as shown in Figure 1, the bonding wire of Example 1-5, comparative example 1-3 preparation is as bonding
The encapsulation of silk thread arc, specific structure are that upper sheet 13 is equipped with chip 12 in plate body 1, are the first solder joint 11 of bank, frame on chip
2 are equipped with frame pin 22, and frame pin 22 is equipped with the second solder joint 21 of bank 3, the metal hook 4 in the direction of the arrow to
The upper pulling force for applying power test bank, the pulling force when pulling force is broken for bank, the length of bank between 1-3 mm,
This experimental example bank length is 3mm, and metal crochet hook acts on the highest point of bank, and the bonding wire of Same Way preparation carries out in parallel
10 tests are averaged, as average tension value, as shown in table 1.
Bonding wire tensile test result obtained by 1 embodiment 1-5 of table, comparative example 1-3
Experimental example 2
The test of elongation percentage floating range, test method: according to 10573 test method of GB/T, to embodiment 1-5, comparative example
Bonding wire described in 1-3 carries out elongation percentage test, and 100mm finished wire rod is taken to be placed in tension tester, standard tensile speed 10mm/
Min is recorded elongation percentage (EL, %) after wire rod is pulled off, and is repeated 100 times, and the range of elongation percentage is obtained, i.e. elongation percentage is floating
Dynamic range, as shown in table 2.
Bonding wire elongation percentage floating range test result obtained by 2 embodiment 1-5 of table, comparative example 1-3
The above embodiments are merely examples for clarifying the description, and does not limit the embodiments.For institute
For the those of ordinary skill in category field, other various forms of variations or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And obvious variation extended from this or change
It moves still within the protection scope of the invention.
Claims (10)
1. a kind of alloy composite, which is characterized in that in terms of the gross mass of the alloy composite, comprising: silver 92%~
99.3wt%, 0.5%~4wt% of palladium, copper 0.1-2wt%, golden 0.1-2wt%, gallium 20-200PPM, cerium 20-200PPM, platinum 20-
200PPM, lanthanum 20-200PPM.
2. alloy composite according to claim 1, which is characterized in that silver 94%~98wt%, 1%~3wt% of palladium, copper
0.5-1.5wt%, golden 0.5-1.5wt%, gallium 100-150PPM, cerium 100-150PPM, platinum 100-150PPM, lanthanum 100-
150PPM。
3. alloy composite according to claim 1, which is characterized in that silver 95%, palladium 3%, copper 1%, gold 1%, gallium
100PPM, cerium 100PPM, platinum 100PPM, lanthanum 100PPM.
4. alloy composite according to claim 1, which is characterized in that the silver, copper and gold purity be
99.99%.
5. a kind of alloy wire, which is characterized in that alloy wire diameter of section≤50 μm, as described in claim any one of 1-4
Alloy composite be prepared.
6. a kind of preparation method of alloy wire described in claim 5, which comprises the following steps:
Founding step: the base material that silver-based material and other alloying elements form is subjected to founding, bar is made；
Drawing step: the bar is subjected to wire drawing, is drawn to the fine silk material of required size；
Annealing steps: the fine silk material is subjected to annealing process and is handled up to required bonding wire.
7. the preparation method of alloy wire according to claim 6, which is characterized in that the annealing process is in hydrogen nitrogen mixed gas
Under body protection, annealing temperature is 450-550 DEG C, and annealing speed is 55-65 ms/min.
8. the preparation method of alloy wire according to claim 7, which is characterized in that in the hydrogen-nitrogen mixture gas hydrogen and
The volume ratio of nitrogen is 1:19.
9. a kind of bonding alloy wire, which is characterized in that by including that any one of the claim 1-4 alloy composite is prepared
Or the alloy wire described in claim 5 is made or is prepared by any one of the claim 6-8 alloy wire preparation method.
10. alloy wire or the conjunction as described in claim 5 that a kind of any one of claim 1-4 alloy composite is prepared
Spun gold or the alloy wire being prepared by any one of the claim 6-8 alloy wire preparation method or as described in claim 9
Application of the bonding alloy wire in integrated antenna package field.
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| CN201910368456.6A CN109930020B (en) | 2019-05-05 | 2019-05-05 | Bonding alloy wire and preparation and application thereof |
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| CN201910368456.6A CN109930020B (en) | 2019-05-05 | 2019-05-05 | Bonding alloy wire and preparation and application thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699569A (en) * | 2019-09-18 | 2020-01-17 | 广东佳博电子科技有限公司 | Bonded silver wire material with stably distributed crystal grains and preparation method thereof |
| CN111118331A (en) * | 2019-12-17 | 2020-05-08 | 深圳金斯达应用材料有限公司 | High-purity gold-silver-palladium composite bonding material and preparation method thereof |
| CN112164685A (en) * | 2020-08-31 | 2021-01-01 | 浙江大学 | Organic-coated corrosion-resistant bonded silver wire and preparation method thereof |
| CN113026009A (en) * | 2021-03-29 | 2021-06-25 | 广东禾木科技有限公司 | Passivation solution, method for improving bonding performance of metal material, bonding wire and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218012A (en) * | 2013-05-31 | 2014-12-17 | 天津市金龙焊接材料有限公司 | Metal bonding wire and manufacturing method thereof |
| CN105392594A (en) * | 2013-02-19 | 2016-03-09 | Mk电子株式会社 | Silver alloy bonding wire |
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2019
- 2019-05-05 CN CN201910368456.6A patent/CN109930020B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105392594A (en) * | 2013-02-19 | 2016-03-09 | Mk电子株式会社 | Silver alloy bonding wire |
| CN104218012A (en) * | 2013-05-31 | 2014-12-17 | 天津市金龙焊接材料有限公司 | Metal bonding wire and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699569A (en) * | 2019-09-18 | 2020-01-17 | 广东佳博电子科技有限公司 | Bonded silver wire material with stably distributed crystal grains and preparation method thereof |
| CN111118331A (en) * | 2019-12-17 | 2020-05-08 | 深圳金斯达应用材料有限公司 | High-purity gold-silver-palladium composite bonding material and preparation method thereof |
| CN112164685A (en) * | 2020-08-31 | 2021-01-01 | 浙江大学 | Organic-coated corrosion-resistant bonded silver wire and preparation method thereof |
| CN113026009A (en) * | 2021-03-29 | 2021-06-25 | 广东禾木科技有限公司 | Passivation solution, method for improving bonding performance of metal material, bonding wire and application |
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| Publication number | Publication date |
|---|---|
| CN109930020B (en) | 2020-10-30 |
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