CN105671355B - Low-cost alloy bonding wire and preparation method and application thereof - Google Patents
Low-cost alloy bonding wire and preparation method and application thereof Download PDFInfo
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- CN105671355B CN105671355B CN201610235857.0A CN201610235857A CN105671355B CN 105671355 B CN105671355 B CN 105671355B CN 201610235857 A CN201610235857 A CN 201610235857A CN 105671355 B CN105671355 B CN 105671355B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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Abstract
The invention provides a low-cost alloy bonding wire and a preparation method and application thereof. According to the alloy bonding wire, high-purity silver is adopted as a base material, elements such as gold, palladium, calcium, cerium, iron, niobium and nickel are added, and the most appropriate use amounts of all the elements are determined on the basis of reasonably analyzing and conducting a large amount of research on the base material, so that a synergistic role is achieved among all the elements in the alloy, and therefore a high-performance alloy bonding wire which is high in strength, good in toughness and suitable for high-speed bonding can be obtained. It is proved through experiments that the alloy bonding wire has lower electrical resistivity and good thermal conductivity and mechanical performance, and the tensile strength of the alloy bonding wire is superior to that of a traditional alloy bonding wire with the same wire diameter; the material cost of the alloy bonding wire is only one eighth of that of a gold wire material, the overall selling price is only one fifth of that of a gold wire with the same specification, and the manufacturing cost of LED and IC packaging is greatly reduced. Therefore, the low-cost alloy bonding wire is a preferred material for the field of discrete device and integrated circuit packaging.
Description
Technical field
The invention belongs to encapsulating material technical field, more particularly to a kind of intensity height, good toughness, it is suitable to the low of bonding at a high speed
Cost alloy bonding wire and preparation method and application.
Background technology
Bonding wire as encapsulation lead, be integrated circuit and semi-conductor discrete device manufacture process in it is essential
One of basic material, play bringing-out of connection silicon chip electrode and lead frame, the transmission chip signal of telecommunication, distribute chip
The effect of heat.The quality of bonding wire material will directly affect welding quality, so as to determining the reliability of packaging and stablizing
Property.
Traditional bonding wire is mainly made up of proof gold material, referred to as bonding gold wire, and it possesses excellent chemical stability
And electrical and thermal conductivity performance, thus it is widely used as IC leads.But with rising steadily for international price of gold, the price of bonding gold wire
Also rising all the way, causes the high cost of end product, is unfavorable for that competitiveness improves in enterprise.In addition, bonding gold wire is anti-
Tensile strength is relatively low, for example the gold thread of 20 microns of diameter, and after welding, its maximum pulling strength is not easy less than 5 gram forces, elongation percentage
Control, the aspect factor of the above two becomes the bottleneck for hindering bonding gold wire application and development.
To reduce packaging cost, and also to adapt to various bonding demands, bonding filamentary silver, bonding gold-silver alloy wire meet the tendency of
And give birth to.In all of metallic element, the electric conductivity of silver preferably, but is exactly balling-up using the ultimate challenge existing for fine silver silk
Unstable, oxidizable problem, therefore people direct attention to the development field of gold-silver alloy wire.For example, Chinese patent text
Offer CN102776405A and disclose a kind of bonding gold-silver alloy wire, it is made up of the metal material of following weight ratio:Silver-colored 20-
30%, palladium, calcium, beryllium and cerium are 5-1000ppm, and remaining content is gold.But above-mentioned technology is, with gold as base material, to cause bonding wire
Cost still remain high.
To overcome the above-mentioned deficiency existing for prior art, Chinese patent literature CN104372197A to disclose one kind and partly lead
Body encapsulation silver alloy wire, it includes following components in percentage by weight:0.1-1% gold, 1-5% palladiums, 0.003-0.006%
Calcium, 0.0015-0.003% ceriums, remaining is silver.Alloy wire in the technology is with silver as main component, though bonding can be greatly reduced
The cost of silk, but because its tensile strength is poor, easily breaks under high speed bonding conditions, causes that production efficiency is low, welding effect
It is really undesirable.In addition at present to the increasingly harsh of product reliability test request, and the toughness of above-mentioned alloy wire is poor, it is difficult to reach
Mark.It is that this area urgently solves in consideration of it, developing a kind of intensity height, good toughness, being suitable to the low-cost alloy bonding wire of bonding at a high speed
A technical barrier certainly.
The content of the invention
The technical problem to be solved is to overcome low intensity, the toughness existing for existing alloy bonding silk
Difference, it is difficult to meet and is bonded the defect of demand at a high speed, and then a kind of intensity height, good toughness is provided, the low cost that is bonded at a high speed is suitable to
Alloy bonding silk and preparation method and application.
For this purpose, the present invention realizes that the technical scheme of above-mentioned purpose is:
A kind of low-cost alloy bonding wire, with the gross weight meter of the alloy bonding silk, including following weight percentage
Component:
Silver 88~97%, gold 1~6%, palladium 1~6%, calcium 0.02~0.15%, cerium 0.05~0.15%, ferrum 0.05~
0.15%th, niobium 0.03~0.1%, nickel 0.03~0.1%.
Preferably, the alloy bonding silk includes following components:
Silver 92~97%, gold 1~4%, palladium 1~4%, calcium 0.02~0.1%, cerium 0.05~0.1%, ferrum 0.05~
0.1%th, niobium 0.03~0.1%, nickel 0.03~0.1%.
Preferably, the alloy bonding silk includes following components:
Silver 88~92%, gold 4~6%, palladium 4~6%, calcium 0.1~0.15%, cerium 0.1~0.15%, ferrum 0.1~
0.15%th, niobium 0.05~0.08%, nickel 0.05~0.08%.
Preferably, the purity of the silver is not less than 99.99wt%.
A kind of method for preparing above-mentioned alloy bonding silk, comprises the steps:
(1) vacuum melting will be carried out after the mixing of above-mentioned each component, and makes alloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, the alloy wire of predetermined line footpath is formed;
(3) alloy wire is made annealing treatment, that is, the alloy bonding silk is obtained.
Preferably, the temperature of the vacuum melting be 1100~1200 DEG C, vacuum be 10-2~10-4Pa。
Preferably, the temperature of the annealing is 480~580 DEG C, and annealing speed is 55~75m/min.
Further, it is additionally included in the wire winding and packaging technology set gradually after the annealing.
Preferably, performance test wrapper section is also included during the annealing.
Application of the above-mentioned alloy bonding silk in discrete device and integrated antenna package technology.
The above-mentioned technical proposal of the present invention has the advantage that:
1st, low-cost alloy bonding wire of the present invention, by adopting high purity silver for base material, addition gold, palladium, calcium, cerium,
The elements such as ferrum, niobium, nickel, and the optimum consumption of above-mentioned each component is determined on the base material of reasonable analysis and numerous studies so that
Collaboration facilitation is produced between each element in alloy such that it is able to obtain a kind of intensity height, good toughness, be suitable to what is be bonded at a high speed
High performance alloys bonding wire.Tests prove that, the alloy bonding silk of the present invention has relatively low resistivity and good heat conductivity
And mechanical performance, its tensile strength better than equal line footpath conventional alloys bonding wire, and the material of the alloy bonding silk of the present invention
Cost is only the 1/8 of gold wire rod, and macromarketing price is only the 1/5 of same specification gold thread, significantly reduces LED and IC package
Manufacturing cost, so that the alloy bonding silk of the present invention is expected to become the first-selected material in discrete device and integrated antenna package field
Material.
2nd, the method for preparing alloy bonding silk of the present invention, by by the material such as silver, gold, palladium, calcium, cerium, ferrum, niobium, nickel
Vacuum melting, wire drawing and annealing are carried out successively after material mixing, you can intensity height, the alloy bonding silk of good toughness, tool is obtained
The advantage for have process is simple, being readily produced.
Specific embodiment
Technical scheme will be clearly and completely described below, it is clear that described embodiment is this
Bright a part of embodiment, rather than the embodiment of whole.Based on the embodiment in the present invention, those of ordinary skill in the art are not having
Have and make the every other embodiment obtained under the premise of creative work, belong to the scope of protection of the invention.Additionally, below
As long as in described different embodiments of the present invention involved technical characteristic do not constitute each other conflict just can be mutual
With reference to.
Embodiment 1
Alloy bonding silk described in the present embodiment, with its gross weight meter, is made up of the component of following weight percentage:
Gold 1%, palladium 4%, calcium 0.02%, cerium 0.1%, ferrum 0.05%, niobium 0.05%, nickel 0.1%, balance of purity
The silver of 99.999wt%.
The preparation method of the alloy bonding silk comprises the steps:
(1) will be placed in vacuum melting machine after above-mentioned each component mix homogeneously, be 10 in lower vacuum-4Pa, temperature are
Vacuum melting is carried out under conditions of 1200 DEG C, and is madeAlloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, is drawn into alloy bar material using various wire drawing machinees are from coarse to fine
The alloy wire of predetermined line footpath, specially:
The first thick wire drawing machine stretching is first passed around, line footpath is stretched to into 1mm by 8mm, draw speed is 0.1m/s, then sequentially
Through the second thin wire drawing machine (such as the SS21BC of SKAWA companies of Japan production) with the rate tensile of 0.5m/s to 0.1mm, superfine
Wire drawing machine (WSS21BC of such as Japan SKAWA productions) is with the rate tensile of 1m/s to 0.05mm and the thin wire drawing machine stretching of super
The WSS21BC of production (such as Japan SKAWA) with the speed of 3m/s be further stretched as line footpath be 23 μm, 25 μm of two kinds of alloys
Bonding wire;
(3) alloy wire is made annealing treatment at 480 DEG C, with the speed of 65m/min, finished product Jing performance tests are closed
The alloy bonding silk is after lattice.
Alloy bonding silk is silvery white in color obtained in the present embodiment, and its pyroconductivity is 3.1W/cmK, and resistivity is 2.3 μ
Ω·cm。
Embodiment 2
Alloy bonding silk described in the present embodiment, with its gross weight meter, is made up of the component of following percentage by weight:
Gold 4%, palladium 1%, calcium 0.15%, cerium 0.05%, ferrum 0.1%, niobium 0.1%, nickel 0.03%, balance of purity
The silver of 99.999wt%.
The preparation method of the alloy bonding silk comprises the steps:
(1) will be placed in vacuum melting machine after above-mentioned each component mix homogeneously, be 10 in lower vacuum-3Pa, temperature are
Vacuum melting is carried out under conditions of 1100 DEG C, and is madeAlloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, is drawn into alloy bar material using various wire drawing machinees are from coarse to fine
The alloy wire of predetermined line footpath, specially:
The first thick wire drawing machine stretching is first passed around, line footpath is stretched to into 1mm by 8mm, draw speed is 0.1m/s, then sequentially
Through the second thin wire drawing machine (such as the SS21BC of SKAWA companies of Japan production) with the rate tensile of 0.5m/s to 0.1mm, superfine
Wire drawing machine (WSS21BC of such as Japan SKAWA productions) is with the rate tensile of 1m/s to 0.05mm and the thin wire drawing machine stretching of super
The WSS21BC of production (such as Japan SKAWA) with the speed of 3m/s be further stretched as line footpath be 23 μm, 25 μm of two kinds of alloys
Bonding wire;
(3) alloy wire is made annealing treatment at 530 DEG C, with the speed of 75m/min, finished product Jing performance tests are closed
The alloy bonding silk is after lattice.
Embodiment 3
Alloy bonding silk described in the present embodiment, with its gross weight meter, is made up of the component of following percentage by weight:
Gold 6%, palladium 3.5%, calcium 0.1%, cerium 0.15%, ferrum 0.08%, niobium 0.08%, nickel 0.05%, balance of purity
The silver of 99.999wt%.
The preparation method of the alloy bonding silk comprises the steps:
(1) will be placed in vacuum melting machine after above-mentioned each component mix homogeneously, be 10 in lower vacuum-2Pa, temperature are
Vacuum melting is carried out under conditions of 1150 DEG C, and is madeAlloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, is drawn into alloy bar material using various wire drawing machinees are from coarse to fine
The alloy wire of predetermined line footpath, specially:
The first thick wire drawing machine stretching is first passed around, line footpath is stretched to into 1mm by 8mm, draw speed is 0.1m/s, then sequentially
Through the second thin wire drawing machine (such as the SS21BC of SKAWA companies of Japan production) with the rate tensile of 0.5m/s to 0.1mm, superfine
Wire drawing machine (WSS21BC of such as Japan SKAWA productions) is with the rate tensile of 1m/s to 0.05mm and the thin wire drawing machine stretching of super
The WSS21BC of production (such as Japan SKAWA) with the speed of 3m/s be further stretched as line footpath be 23 μm, 25 μm of two kinds of alloys
Bonding wire;
(3) alloy wire is made annealing treatment at 580 DEG C, with the speed of 55m/min, finished product Jing performance tests are closed
Jing coilings and encapsulation process again after lattice, that is, be obtained the alloy bonding silk.
Embodiment 4
Alloy bonding silk described in the present embodiment, with its gross weight meter, is made up of the component of following percentage by weight:
Gold 3.5%, palladium 6%, calcium 0.05%, cerium 0.08%, ferrum 0.15%, niobium 0.03%, nickel 0.08%, balance of purity
The silver of 99.999wt%.
The preparation method of the alloy bonding silk comprises the steps:
(1) will be placed in vacuum melting machine after above-mentioned each component mix homogeneously, be 10 in lower vacuum-4Pa, temperature are
Vacuum melting is carried out under conditions of 1200 DEG C, and is madeAlloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, is drawn into alloy bar material using various wire drawing machinees are from coarse to fine
The alloy wire of predetermined line footpath, specially:
The first thick wire drawing machine stretching is first passed around, line footpath is stretched to into 1mm by 8mm, draw speed is 0.1m/s, then sequentially
Through the second thin wire drawing machine (such as the SS21BC of SKAWA companies of Japan production) with the rate tensile of 0.5m/s to 0.1mm, superfine
Wire drawing machine (WSS21BC of such as Japan SKAWA productions) is with the rate tensile of 1m/s to 0.05mm and the thin wire drawing machine stretching of super
The WSS21BC of production (such as Japan SKAWA) with the speed of 3m/s be further stretched as line footpath be 23 μm, 25 μm of two kinds of alloys
Bonding wire;
(3) alloy wire is made annealing treatment at 550 DEG C, with the speed of 70 DEG C/min, finished product Jing performance tests
Jing coilings and encapsulation process again after qualified, that is, be obtained the alloy bonding silk.
Embodiment 5
Alloy bonding silk described in the present embodiment, with its gross weight meter, is made up of the component of following percentage by weight:
Gold 4%, palladium 2%, calcium 0.08%, cerium 0.05%, ferrum 0.1%, niobium 0.06%, nickel 0.07%, balance of purity
The silver of 99.999wt%.
The preparation method of the alloy bonding silk comprises the steps:
(1) will be placed in vacuum melting machine after above-mentioned each component mix homogeneously, be 10 in lower vacuum-3Pa, temperature are
Vacuum melting is carried out under conditions of 1100 DEG C, and is madeAlloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, is drawn into alloy bar material using various wire drawing machinees are from coarse to fine
The alloy wire of predetermined line footpath, specially:
The first thick wire drawing machine stretching is first passed around, line footpath is stretched to into 1mm by 8mm, draw speed is 0.1m/s, then sequentially
Through the second thin wire drawing machine (such as the SS21BC of SKAWA companies of Japan production) with the rate tensile of 0.5m/s to 0.1mm, superfine
Wire drawing machine (WSS21BC of such as Japan SKAWA productions) is with the rate tensile of 1m/s to 0.05mm and the thin wire drawing machine stretching of super
The WSS21BC of production (such as Japan SKAWA) with the speed of 3m/s be further stretched as line footpath be 23 μm, 25 μm of two kinds of alloys
Bonding wire;
(3) alloy wire is made annealing treatment at 500 DEG C, with the speed of 60m/min, finished product Jing performance tests are closed
Jing coilings and encapsulation process again after lattice, that is, be obtained the alloy bonding silk.
Comparative example 1
Silver alloy wire of this comparative example obtained by embodiment 1 in the description of Chinese patent literature CN104372197A,
Consisting of:Gold 0.5%, palladium 3%, calcium 0.0045%, cerium 0.002%, balance of high purity silver (99.9995%).
The silver alloy wire of this comparative example is obtained using technique same as Example 1.
Comparative example 2
In this comparative example, conventional alloys bonding wire is made up of the component of following percentage by weight:Gold 1%, palladium 4%,
The silver of balance of purity 99.999wt%;Its preparation technology is with embodiment 1.
Experimental example 1
Bonding to LED lamp bead is completed using the alloy bonding silk of the embodiment of the present invention 1, by testing packaged LED
Scarce bright situation of the lamp bead under high temperature and low temperature, reflects the cold-resistant thermal shock resistance properties of alloy bonding silk, and concrete test condition is:Choosing
The LED lamp bead of 220 same models is selected, 10 groups, 22 per group are randomly divided into;High temperature storage:100 DEG C, 5 minutes;Conversion
Time:10 seconds;Low temperature is stored:- 10 DEG C, 5 minutes.Test result is shown in Table 1.
The cold-resistant thermal shock resistance properties (bright light number/sample number) of the alloy bonding silk of the embodiment 1 of table 1
Table 1 is clearly demonstrated, and under the test conditions above, none lamp bead occurs lacking bright situation, and this absolutely proves this
Bright alloy bonding silk can resist thermal shock, with good toughness.
Experimental example 2
The mechanical performance of alloy bonding silk obtained in embodiment of the present invention 1-2 and comparative example 1-2 is tested, as a result
As shown in table 2.
The mechanical performance of the different-alloy bonding wire of table 2
From table 2 it can be seen that under same line footpath, the mechanical performance of the alloy bonding silk of embodiment 1-2 is superior to contrast
Example 1-2, particularly embodiment 1-2 in line footpath be 23 μm alloy bonding silk have and the alloy that line footpath in comparative example 2 is 25 μm
The suitable or more excellent mechanical performance of bonding wire, and the elongation percentage of the alloy bonding silk of embodiment 1-2 is with comparative example 2 quite, table
The alloy bonding silk of the bright present invention has the moderate plasticity that can meet bonding demand, thus absolutely proves, in actual bond life
In product, line footpath of the present invention is that 23 μm of alloy bonding silk can replace completely the alloy bonding silk that traditional line footpath is 25 μm to make
With being thus enough to reduce by 15% wire rod cost.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to the restriction of embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of low-cost alloy bonding wire, it is characterised in that with the gross weight meter of the alloy bonding silk, including following weight
The component of percentage composition:
Silver 88~97%, gold 1~6%, palladium 1~6%, calcium 0.02~0.15%, cerium 0.05~0.15%, ferrum 0.05~
0.15%th, niobium 0.03~0.1%, nickel 0.03~0.1%.
2. alloy bonding silk according to claim 1, it is characterised in that including following components:
Silver 92~97%, gold 1~4%, palladium 1~4%, calcium 0.02~0.1%, cerium 0.05~0.1%, ferrum 0.05~0.1%, niobium
0.03~0.1%, nickel 0.03~0.1%.
3. alloy bonding silk according to claim 1, it is characterised in that including following components:
Silver 88~92%, gold 4~6%, palladium 4~6%, calcium 0.1~0.15%, cerium 0.1~0.15%, ferrum 0.1~0.15%, niobium
0.05~0.08%, nickel 0.05~0.08%.
4. the alloy bonding silk according to any one of claim 1-3, it is characterised in that the purity of the silver is not less than
99.99wt%.
5. a kind of method of the alloy bonding silk prepared described in any one of claim 1-4, it is characterised in that including following step
Suddenly:
(1) vacuum melting will be carried out after the mixing of above-mentioned each component, and makes alloy bar material;
(2) Wire Drawing is carried out to the alloy bar material, the alloy wire of predetermined line footpath is formed;
(3) alloy wire is made annealing treatment, that is, the alloy bonding silk is obtained.
6. the method for preparing alloy bonding silk according to claim 5, it is characterised in that the temperature of the vacuum melting is
1100~1200 DEG C, vacuum be 10-2~10-4Pa.
7. the method for preparing alloy bonding silk according to claim 5, it is characterised in that the temperature of the annealing is 480
~580 DEG C, annealing speed is 55~75m/min.
8. the method for preparing alloy bonding silk according to any one of claim 5-7, it is characterised in that be additionally included in described
The wire winding set gradually after annealing and packaging technology.
9. the method for preparing alloy bonding silk according to any one of claim 5-7, it is characterised in that described annealing treatment
Also include performance test wrapper section during reason.
10. application of the alloy bonding silk described in any one of claim 1-4 in discrete device and integrated antenna package technology.
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