CN105671355A - Low-cost alloy bonding wire and preparation method and application thereof - Google Patents
Low-cost alloy bonding wire and preparation method and application thereof Download PDFInfo
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- CN105671355A CN105671355A CN201610235857.0A CN201610235857A CN105671355A CN 105671355 A CN105671355 A CN 105671355A CN 201610235857 A CN201610235857 A CN 201610235857A CN 105671355 A CN105671355 A CN 105671355A
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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Abstract
The invention provides a low-cost alloy bonding wire and a preparation method and application thereof. According to the alloy bonding wire, high-purity silver is adopted as a base material, elements such as gold, palladium, calcium, cerium, iron, niobium and nickel are added, and the most appropriate use amounts of all the elements are determined on the basis of reasonably analyzing and conducting a large amount of research on the base material, so that a synergistic role is achieved among all the elements in the alloy, and therefore a high-performance alloy bonding wire which is high in strength, good in toughness and suitable for high-speed bonding can be obtained. It is proved through experiments that the alloy bonding wire has lower electrical resistivity and good thermal conductivity and mechanical performance, and the tensile strength of the alloy bonding wire is superior to that of a traditional alloy bonding wire with the same wire diameter; the material cost of the alloy bonding wire is only one eighth of that of a gold wire material, the overall selling price is only one fifth of that of a gold wire with the same specification, and the manufacturing cost of LED and IC packaging is greatly reduced. Therefore, the low-cost alloy bonding wire is a preferred material for the field of discrete device and integrated circuit packaging.
Description
Technical field
The invention belongs to encapsulating material technical field, particularly relate to a kind of intensity height, good toughness, the low-cost alloy bonding wire being suitable to bonding at a high speed and preparation method thereof and application.
Background technology
Bonding wire is as encapsulation lead, one of requisite basic material in the manufacture process of integrated circuit and semi-conductor discrete device, play couple silicon chip electrode and lead frame bringing-out, the transmission chip signal of telecommunication, distribute the effect of chip heat. The quality of bonding wire material will directly affect welding quality, thus determining the reliability and stability of packaging.
Traditional bonding wire is mainly made up of proof gold material, is called bonding gold wire, and it possesses excellent chemical stability and electrical and thermal conductivity performance, thus is widely used as IC lead. But along with rising steadily of international price of gold, the also rising all the way of the price of bonding gold wire, cause the high cost of end product, be unfavorable for that competitiveness improves in enterprise. In addition, the tensile strength of bonding gold wire is relatively low, for instance the gold thread that diameter is 20 microns, and after welding, its maximum pulling strength is less than 5 gram forces, and elongation percentage is not easily controlled, and above two aspect factors become the bottleneck hindering bonding gold wire application with development.
For reducing packaging cost, and also to adapt to various bonding demand, bonding filamentary silver, bonding gold-silver alloy wire are arisen at the historic moment. In all of metallic element, the electric conductivity of silver is best, but using the ultimate challenge existing for fine silver silk is exactly unstable, the oxidizable problem of balling-up, and therefore people direct attention to the development field of gold-silver alloy wire. Such as, Chinese patent literature CN102776405A discloses a kind of bonding gold-silver alloy wire, and it is made up of the metal material of following weight ratio: silver 20-30%, and palladium, calcium, beryllium and cerium are 5-1000ppm, and all the other content are gold. But above-mentioned technology is with gold for base material, cause that the cost of bonding wire still remains high.
For overcoming the above-mentioned deficiency existing for prior art, Chinese patent literature CN104372197A discloses a kind of semiconductor-sealing-purpose silver alloy wire, it includes following components in percentage by weight: 0.1-1% gold, 1-5% palladium, 0.003-0.006% calcium, 0.0015-0.003% cerium, and all the other are silver. Alloy wire in this technology, with silver for main component, though the cost of bonding wire can be greatly reduced, but owing to its tensile strength is poor, easily breaks under high speed bonding conditions, causes that production efficiency is low, welding effect is undesirable. In addition current day by day harsh to product reliability test request, and the toughness of above-mentioned alloy wire is poor, it is difficult to up to standard. In consideration of it, develop a kind of intensity height, good toughness, be suitable to the low-cost alloy bonding wire of at a high speed bonding, it it is this area technical barrier urgently to be resolved hurrily.
Summary of the invention
The technical problem to be solved is in that to overcome that the intensity existing for existing alloy bonding silk is low, poor toughness, the defect being bonded at a high speed demand that is difficult to meet, and then provides a kind of intensity height, good toughness, is suitable to low-cost alloy bonding wire of being bonded at a high speed and preparation method thereof and application.
For this, the present invention realizes the technical scheme of above-mentioned purpose and is:
A kind of low-cost alloy bonding wire, with the gross weight gauge of described alloy bonding silk, including the component of following weight percentage:
Silver 88～97%, gold 1～6%, palladium 1～6%, calcium 0.02～0.15%, cerium 0.05～0.15%, ferrum 0.05～0.15%, niobium 0.03～0.1%, nickel 0.03～0.1%.
Preferably, described alloy bonding silk includes following components:
Silver 92～97%, gold 1～4%, palladium 1～4%, calcium 0.02～0.1%, cerium 0.05～0.1%, ferrum 0.05～0.1%, niobium 0.03～0.1%, nickel 0.03～0.1%.
Preferably, described alloy bonding silk includes following components:
Silver 88～92%, gold 4～6%, palladium 4～6%, calcium 0.1～0.15%, cerium 0.1～0.15%, ferrum 0.1～0.15%, niobium 0.05～0.08%, nickel 0.05～0.08%.
Preferably, the purity of described silver is not less than 99.99wt%.
A kind of method preparing above-mentioned alloy bonding silk, comprises the steps:
(1) carry out vacuum melting after above-mentioned each component being mixed, and make alloy bar material;
(2) described alloy bar material is carried out Wire Drawing, form the alloy wire of predetermined wire diameter;
(3) it is annealed described alloy wire processing, namely prepares described alloy bonding silk.
Preferably, the temperature of described vacuum melting be 1100～1200 DEG C, vacuum be 10-2～10-4Pa。
Preferably, the temperature of described annealing is 480～580 DEG C, and annealing speed is 55～75m/min.
Further, it is additionally included in the wire winding set gradually after described annealing and packaging technology.
Preferably, in the process of described annealing, also include performance test wrapper joint.
The application in discrete device and integrated antenna package technology of the above-mentioned alloy bonding silk.
The technique scheme of the present invention has the advantage that
1, low-cost alloy bonding wire of the present invention, it is base material by adopting high purity silver, add the elements such as gold, palladium, calcium, cerium, ferrum, niobium, nickel, and on the base material of reasonable analysis and big quantity research, determine the optimum consumption of above-mentioned each component, make between each element in alloy, to produce collaborative facilitation such that it is able to obtain a kind of intensity height, good toughness, be suitable to the high performance alloys bonding wire that high speed is bonded. Tests prove that, the alloy bonding silk of the present invention has relatively low resistivity and good heat conductivity and mechanical performance, its tensile strength is better than the conventional alloys bonding wire of equal wire diameter, and the material cost of the alloy bonding silk of the present invention is only the 1/8 of gold wire rod, macromarketing price is only the 1/5 of same specification gold thread, significantly reduce the manufacturing cost of LED and IC encapsulation, so that the alloy bonding silk of the present invention is expected to the preferred material becoming discrete device and integrated antenna package field.
2, the method preparing alloy bonding silk of the present invention, by being sequentially carried out vacuum melting, wire drawing and annealing after the material mixing such as silver, gold, palladium, calcium, cerium, ferrum, niobium, nickel, can be prepared by the alloy bonding silk of intensity height, good toughness, there is the advantage that technique is simple, be readily produced.
Detailed description of the invention
Technical scheme will be clearly and completely described below, it is clear that described embodiment is a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention. As long as just can be combined with each other additionally, technical characteristic involved in invention described below difference embodiment does not constitute conflict each other.
Embodiment 1
Alloy bonding silk described in the present embodiment, with its gross weight gauge, is made up of the component of following weight percentage:
Gold 1%, palladium 4%, calcium 0.02%, cerium 0.1%, ferrum 0.05%, niobium 0.05%, nickel 0.1%, surplus is the silver of purity 99.999wt%.
The preparation method of described alloy bonding silk comprises the steps:
(1) above-mentioned each component mix homogeneously is placed in vacuum melting machine, is 10 in lower vacuum-4Carry out vacuum melting when Pa, temperature are 1200 DEG C, and makeAlloy bar material;
(2) described alloy bar material is carried out Wire Drawing, use the various wire drawing machine alloy wire that alloy bar material is drawn into predetermined wire diameter from coarse to fine, particularly as follows:
First pass around the first thick wire drawing machine to stretch, wire diameter is stretched to 1mm by 8mm, draw speed is 0.1m/s, more sequentially through the second thin wire drawing machine (SS21BC that such as SKAWA company of Japan produces) with the rate tensile of 0.5m/s to 0.1mm, superfine wire drawing machine (WSS21BC that such as Japan SKAWA produces) with the rate tensile of 1m/s to the thin wire drawing machine of 0.05mm and super stretch (WSS21BC that such as Japan SKAWA produces) with the speed of 3m/s be stretched as further wire diameter be 23 μm, two kinds of alloy bonding silks of 25 μm;
(3) 480 DEG C, be annealed processing to described alloy wire with the speed of 65m/min, finished product is described alloy bonding silk after performance test is qualified.
The alloy bonding silk that the present embodiment prepares is silvery white in color, and its pyroconductivity is 3.1W/cm K, and resistivity is 2.3 μ Ω cm.
Embodiment 2
Alloy bonding silk described in the present embodiment, with its gross weight gauge, is made up of the component of following percentage by weight:
Gold 4%, palladium 1%, calcium 0.15%, cerium 0.05%, ferrum 0.1%, niobium 0.1%, nickel 0.03%, surplus is the silver of purity 99.999wt%.
The preparation method of described alloy bonding silk comprises the steps:
(1) above-mentioned each component mix homogeneously is placed in vacuum melting machine, is 10 in lower vacuum-3Carry out vacuum melting when Pa, temperature are 1100 DEG C, and makeAlloy bar material;
(2) described alloy bar material is carried out Wire Drawing, use the various wire drawing machine alloy wire that alloy bar material is drawn into predetermined wire diameter from coarse to fine, particularly as follows:
First pass around the first thick wire drawing machine to stretch, wire diameter is stretched to 1mm by 8mm, draw speed is 0.1m/s, more sequentially through the second thin wire drawing machine (SS21BC that such as SKAWA company of Japan produces) with the rate tensile of 0.5m/s to 0.1mm, superfine wire drawing machine (WSS21BC that such as Japan SKAWA produces) with the rate tensile of 1m/s to the thin wire drawing machine of 0.05mm and super stretch (WSS21BC that such as Japan SKAWA produces) with the speed of 3m/s be stretched as further wire diameter be 23 μm, two kinds of alloy bonding silks of 25 μm;
(3) 530 DEG C, be annealed processing to described alloy wire with the speed of 75m/min, finished product is described alloy bonding silk after performance test is qualified.
Embodiment 3
Alloy bonding silk described in the present embodiment, with its gross weight gauge, is made up of the component of following percentage by weight:
Gold 6%, palladium 3.5%, calcium 0.1%, cerium 0.15%, ferrum 0.08%, niobium 0.08%, nickel 0.05%, surplus is the silver of purity 99.999wt%.
The preparation method of described alloy bonding silk comprises the steps:
(1) above-mentioned each component mix homogeneously is placed in vacuum melting machine, is 10 in lower vacuum-2Carry out vacuum melting when Pa, temperature are 1150 DEG C, and makeAlloy bar material;
(2) described alloy bar material is carried out Wire Drawing, use the various wire drawing machine alloy wire that alloy bar material is drawn into predetermined wire diameter from coarse to fine, particularly as follows:
First pass around the first thick wire drawing machine to stretch, wire diameter is stretched to 1mm by 8mm, draw speed is 0.1m/s, more sequentially through the second thin wire drawing machine (SS21BC that such as SKAWA company of Japan produces) with the rate tensile of 0.5m/s to 0.1mm, superfine wire drawing machine (WSS21BC that such as Japan SKAWA produces) with the rate tensile of 1m/s to the thin wire drawing machine of 0.05mm and super stretch (WSS21BC that such as Japan SKAWA produces) with the speed of 3m/s be stretched as further wire diameter be 23 μm, two kinds of alloy bonding silks of 25 μm;
(3) 580 DEG C, be annealed processing to described alloy wire with the speed of 55m/min, finished product then through coiling and encapsulation process, namely prepares described alloy bonding silk after performance test is qualified.
Embodiment 4
Alloy bonding silk described in the present embodiment, with its gross weight gauge, is made up of the component of following percentage by weight:
Gold 3.5%, palladium 6%, calcium 0.05%, cerium 0.08%, ferrum 0.15%, niobium 0.03%, nickel 0.08%, surplus is the silver of purity 99.999wt%.
The preparation method of described alloy bonding silk comprises the steps:
(1) above-mentioned each component mix homogeneously is placed in vacuum melting machine, is 10 in lower vacuum-4Carry out vacuum melting when Pa, temperature are 1200 DEG C, and makeAlloy bar material;
(2) described alloy bar material is carried out Wire Drawing, use the various wire drawing machine alloy wire that alloy bar material is drawn into predetermined wire diameter from coarse to fine, particularly as follows:
First pass around the first thick wire drawing machine to stretch, wire diameter is stretched to 1mm by 8mm, draw speed is 0.1m/s, more sequentially through the second thin wire drawing machine (SS21BC that such as SKAWA company of Japan produces) with the rate tensile of 0.5m/s to 0.1mm, superfine wire drawing machine (WSS21BC that such as Japan SKAWA produces) with the rate tensile of 1m/s to the thin wire drawing machine of 0.05mm and super stretch (WSS21BC that such as Japan SKAWA produces) with the speed of 3m/s be stretched as further wire diameter be 23 μm, two kinds of alloy bonding silks of 25 μm;
(3) 550 DEG C, be annealed processing to described alloy wire with the speed of 70 DEG C/min, finished product then through coiling and encapsulation process, namely prepares described alloy bonding silk after performance test is qualified.
Embodiment 5
Alloy bonding silk described in the present embodiment, with its gross weight gauge, is made up of the component of following percentage by weight:
Gold 4%, palladium 2%, calcium 0.08%, cerium 0.05%, ferrum 0.1%, niobium 0.06%, nickel 0.07%, surplus is the silver of purity 99.999wt%.
The preparation method of described alloy bonding silk comprises the steps:
(1) above-mentioned each component mix homogeneously is placed in vacuum melting machine, is 10 in lower vacuum-3Carry out vacuum melting when Pa, temperature are 1100 DEG C, and makeAlloy bar material;
(2) described alloy bar material is carried out Wire Drawing, use the various wire drawing machine alloy wire that alloy bar material is drawn into predetermined wire diameter from coarse to fine, particularly as follows:
First pass around the first thick wire drawing machine to stretch, wire diameter is stretched to 1mm by 8mm, draw speed is 0.1m/s, more sequentially through the second thin wire drawing machine (SS21BC that such as SKAWA company of Japan produces) with the rate tensile of 0.5m/s to 0.1mm, superfine wire drawing machine (WSS21BC that such as Japan SKAWA produces) with the rate tensile of 1m/s to the thin wire drawing machine of 0.05mm and super stretch (WSS21BC that such as Japan SKAWA produces) with the speed of 3m/s be stretched as further wire diameter be 23 μm, two kinds of alloy bonding silks of 25 μm;
(3) 500 DEG C, be annealed processing to described alloy wire with the speed of 60m/min, finished product then through coiling and encapsulation process, namely prepares described alloy bonding silk after performance test is qualified.
Comparative example 1
This comparative example be Chinese patent literature CN104372197A description in silver alloy wire obtained by embodiment 1, it consists of: gold 0.5%, palladium 3%, calcium 0.0045%, cerium 0.002%, surplus are high purity silver (99.9995%).
The technique identical with embodiment 1 is adopted to prepare the silver alloy wire of this comparative example.
Comparative example 2
In this comparative example, conventional alloys bonding wire is prepared by the component composition of percentage by weight: gold 1%, palladium 4%, surplus are the silver of purity 99.999wt%; Its preparation technology is with embodiment 1.
Experimental example 1
The alloy bonding silk adopting the embodiment of the present invention 1 completes the bonding to LED lamp bead, by testing the packaged LED lamp bead scarce bright situation under high temperature and low temperature, the cold-hot impact property of reflection alloy bonding silk, concrete test condition is: select the LED lamp bead of 220 same model, it is randomly divided into 10 groups, often group 22; High temperature storage: 100 DEG C, 5 minutes; The conversion time: 10 seconds; Low temperature stores :-10 DEG C, 5 minutes. Test result is in Table 1.
The cold-hot impact property (bright light number/sample number) of the alloy bonding silk of table 1 embodiment 1
Table 1 clearly demonstrates, and under the test conditions above, none lamp bead occurs lacking bright situation, and this absolutely proves that the alloy bonding silk of the present invention can resist thermal shock, has good toughness.
Experimental example 2
The mechanical performance of the alloy bonding silk that embodiment of the present invention 1-2 and comparative example 1-2 prepares is tested, and result is as shown in table 2.
The mechanical performance of table 2 different-alloy bonding wire
As can be seen from Table 2, under same wire diameter, the mechanical performance of the alloy bonding silk of embodiment 1-2 is superior to comparative example 1-2, particularly in embodiment 1-2 wire diameter be 23 μm the alloy bonding silk that alloy bonding silk has with wire diameter in comparative example 2 is 25 μm quite or more excellent mechanical performance, and the elongation percentage of the alloy bonding silk of embodiment 1-2 is suitable with comparative example 2, show that the alloy bonding silk of the present invention has the moderate plasticity that can meet bonding demand, thus absolutely prove, in actual bond produces, the alloy bonding silk that wire diameter of the present invention is 23 μm can substitute for the alloy bonding silk use that traditional wire diameter is 25 μm completely, thus it is enough to reduce the wire rod cost of 15%.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment. For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description. Here without also cannot all of embodiment be given exhaustive. And the apparent change thus extended out or variation are still among the protection domain of the invention.
Claims (10)
1. a low-cost alloy bonding wire, it is characterised in that with the gross weight gauge of described alloy bonding silk, including the component of following weight percentage:
Silver 88～97%, gold 1～6%, palladium 1～6%, calcium 0.02～0.15%, cerium 0.05～0.15%, ferrum 0.05～0.15%, niobium 0.03～0.1%, nickel 0.03～0.1%.
2. alloy bonding silk according to claim 1, it is characterised in that include following components:
Silver 92～97%, gold 1～4%, palladium 1～4%, calcium 0.02～0.1%, cerium 0.05～0.1%, ferrum 0.05～0.1%, niobium 0.03～0.1%, nickel 0.03～0.1%.
3. alloy bonding silk according to claim 1, it is characterised in that include following components:
Silver 88～92%, gold 4～6%, palladium 4～6%, calcium 0.1～0.15%, cerium 0.1～0.15%, ferrum 0.1～0.15%, niobium 0.05～0.08%, nickel 0.05～0.08%.
4. the alloy bonding silk according to any one of claim 1-3, it is characterised in that the purity of described silver is not less than 99.99wt%.
5. the method for the alloy bonding silk that a kind is prepared described in any one of claim 1-4, it is characterised in that comprise the steps:
(1) carry out vacuum melting after above-mentioned each component being mixed, and make alloy bar material;
(2) described alloy bar material is carried out Wire Drawing, form the alloy wire of predetermined wire diameter;
(3) it is annealed described alloy wire processing, namely prepares described alloy bonding silk.
6. the method preparing alloy bonding silk according to claim 5, it is characterised in that the temperature of described vacuum melting is 1100～1200 DEG C, vacuum is 10-2～10-4Pa。
7. the method preparing alloy bonding silk according to claim 5 or 6, it is characterised in that the temperature of described annealing is 480～580 DEG C, annealing speed is 55～75m/min.
8. the method preparing alloy bonding silk according to any one of claim 5-7, it is characterised in that be additionally included in the wire winding and packaging technology that set gradually after described annealing.
9. the method preparing alloy bonding silk according to any one of claim 5-8, it is characterised in that also include performance test wrapper joint in the process of described annealing.
10. the application in discrete device and integrated antenna package technology of the alloy bonding silk described in any one of claim 1-4.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106947903A (en) * | 2017-03-09 | 2017-07-14 | 苏州东吴黄金文化发展有限公司 | A kind of silver-colored niobium color-changing composite material and preparation method thereof |
| TWI609977B (en) * | 2016-10-17 | 2018-01-01 | 光大應用材料科技股份有限公司 | Silver alloy wire |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011098383A (en) * | 2009-11-07 | 2011-05-19 | Namiki Precision Jewel Co Ltd | Joined body of precision component |
| CN102776408A (en) * | 2012-08-16 | 2012-11-14 | 烟台一诺电子材料有限公司 | Silver alloy wire and preparation method thereof |
| CN103194637A (en) * | 2013-04-27 | 2013-07-10 | 烟台招金励福贵金属股份有限公司 | Bonding alloy filamentary silver and preparation method thereof |
-
2016
- 2016-04-15 CN CN201610235857.0A patent/CN105671355B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011098383A (en) * | 2009-11-07 | 2011-05-19 | Namiki Precision Jewel Co Ltd | Joined body of precision component |
| CN102776408A (en) * | 2012-08-16 | 2012-11-14 | 烟台一诺电子材料有限公司 | Silver alloy wire and preparation method thereof |
| CN103194637A (en) * | 2013-04-27 | 2013-07-10 | 烟台招金励福贵金属股份有限公司 | Bonding alloy filamentary silver and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI609977B (en) * | 2016-10-17 | 2018-01-01 | 光大應用材料科技股份有限公司 | Silver alloy wire |
| CN106947903A (en) * | 2017-03-09 | 2017-07-14 | 苏州东吴黄金文化发展有限公司 | A kind of silver-colored niobium color-changing composite material and preparation method thereof |
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