CN105543532A - Ultramicro bonded mixed alloy wire and preparing method thereof - Google Patents
Ultramicro bonded mixed alloy wire and preparing method thereof Download PDFInfo
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- CN105543532A CN105543532A CN201610092089.8A CN201610092089A CN105543532A CN 105543532 A CN105543532 A CN 105543532A CN 201610092089 A CN201610092089 A CN 201610092089A CN 105543532 A CN105543532 A CN 105543532A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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Abstract
The invention relates to an ultramicro bonded mixed alloy wire. The ultramicro bonded mixed alloy wire is prepared from high-purity silver (Ag), high-purity gold (Au), high purity palladium (Pd), high-purity platinum (Pt) and high-purity rhodium (Rh), wherein high-purity silver (Ag) serves as a main material, and high-purity gold (Au), high purity palladium (Pd), high-purity platinum (Pt) and high-purity rhodium (Rh) serve as auxiliary materials; or high-purity gold (Au) serves as the main material, and high-purity silver (Ag), high purity palladium (Pd), high-purity platinum (Pt) and high-purity rhodium (Rh) serve as auxiliary materials. The main material accounts for 50%-90% by mass percentage, and the auxiliary materials account for 10%-50% together by mass percentage. The invention further relates to a preparing method of the bonded mixed alloy wire. The ultramicro bonded mixed alloy wire and the preparing method thereof have the advantages that the ultramicro bonded mixed alloy wire has better mechanical performance, better electric conduction and heat dispersion performance and better bonding performance, and micro drawing and narrow-interval and long-distance bonding are facilitated; the defects that a silver alloy wire is extremely likely to be oxidized and vulcanized are overcome, nitrogen or other inert gas for protection does not need to be added in the bonding process, the probability of ball deviation or ball sliding is also greatly reduced, and the bonded mixed alloy wire can stand more times of cold and hot impacts.
Description
Technical field
The present invention relates to the microelectronic industry encapsulation materials such as semi-conductor, unicircuit, LED and aviation circuit card, be specifically related to a kind of atomic thin bonding hybrid alloys silk and preparation method thereof.
Background technology
Bonding wire (bondingwire) is the main mode of connection connecting chip and outer enclosure substrate (substrate) and/or multilayer circuit board (PCB).Bonding wire development trend, mainly wire diameter granular, high workshop life-span (floorlife) and high bobbin length from application direction.
Along with integrated antenna package industry is fast to small volume, high-performance, highly dense, multi-chip direction advances, and feature pitch size is more and more less, and integrated level is more and more higher, and this greatly improves the requirement of para-linkage wire material, too increases bonding packaging difficulty.Spun gold is under thin space, long distance bonding techniques require, inferior position is faded in; Because in ultra fine-pitch ball bond technique, number of pins increases, the quantity of original gold, aluminium bonding wire and length are also increased greatly, causes lead inductance, resistance very high, thus be also difficult to the requirement adapting to high-frequency high-speed performance; Meanwhile, pin number increases, and pin-pitch reduces, and just need to use ultra-fine spun gold, and Super Fine Gold usually causes wire sway, bonding rupture and step on a phenomenon in bonding process, becomes the stability of arc ability also to decline thereupon, thus increases operation easier.On the other hand, gold with high costs, therefore, it is the what the trend requires of continuous microminiaturized, the low cost development of microelectronic industry that exploitation performance and cost all have a novel key zygonema of advantage.
The mainly filamentary silver of existing alternative spun gold and add the Silver alloy wire of trace element in silver, though silver or Silver alloy wire can reduce costs, because of its poor stability, and easily sulfuration, oxidation affect use properties, are difficult to really substitute spun gold.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of atomic thin bonding hybrid alloys silk and preparation method thereof, and this hybrid alloys silk effectively solves existing alternative spun gold poor stability, and easily sulfuration, oxidation affect the above-mentioned Problems existing such as use properties.
Technical problem to be solved by this invention realizes by the following technical solutions:
A kind of atomic thin bonding hybrid alloys silk, with high purity silver Ag for primaries, adds secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh; Or with High Purity Gold Au for primaries, add secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh element, the atomic thin hybrid alloys silk thread of mixing founding drawing.
The present invention improves further and is: described with high purity silver Ag for primaries, namely the mass percentage of high purity silver is 50% ~ 90%, and the mass percentage adding secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh total is 10% ~ 50%; Or with High Purity Gold Au for primaries, namely the mass percentage of High Purity Gold is 50% ~ 90%, the mass percentage adding secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh total is 10% ~ 50%.
The present invention improves further and is: the purity of high purity silver Ag or High Purity Gold Au is more than 99.99%, and the purity of High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh is more than 99.9%.
The invention still further relates to a kind of method making above-mentioned atomic thin bonding hybrid alloys silk, it is characterized in that: the step of this making method is as follows:
(1) solid-state mixing: get primaries high purity silver Ag and secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt, High Purity Rhodium Rh, or get primaries High Purity Gold Au and mix in solid-state with secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt, High Purity Rhodium Rh;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over same continuous casting of single crystal stove and be heated to whole metal and dissolve, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, micro-hybrid alloys silk drawing operation to be drawn into diameter 0.01mm ~ 0.03mm;
(4) cleaning annealing: the hybrid alloys silk that step (3) obtains carried out clean, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
The invention has the beneficial effects as follows: be different from existing bonding gold wire, bonding filamentary silver or bonding Silver alloy wire based on gold or silver, only add trace element; This bonding hybrid alloys silk is formed by the solid-state mixing of primary and secondary quantitative elements, liquid consolute, there is better mechanical property, conductive radiator performance and bonding performance, possesses stability and the plasticity-of proof gold line, possess again high conductivity and the low-cost advantage of silver alloy wire, because of but substitute the optimal selection of gold thread and silver alloy wire.
Embodiment
The technique means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with embodiment, technical scheme of the present invention being further described in detail.
Described hybrid alloys refers to the alloy state novel material of various metallic substance gained after solid-state mixing, liquid consolute, also namely melted by the crucible that Main elements and the minor element of interpolation put into same casting furnace after solid-state mixing by aforementioned proportioning, after liquid mixed smelting is even, cooled and solidified continuous casting becomes hybrid alloys mother metal; Hybrid alloys mother metal founding be shaped is by the passage cold-drawn poling fine bonding hybrid alloys silk such as large, medium and small, thin, micro-; Wherein the diameter of atomic thin bonding hybrid alloys silk is between 0.01mm ~ 0.03mm.
Embodiment one:
A kind of atomic thin bonding hybrid alloys silk, it comprises: be that to add the total mass percentage of secondary amounts be the High Purity Gold Au of 10% to 90% high purity silver Ag by primaries mass percentage, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or be 90% High Purity Gold Au by primaries mass percentage, add the high purity silver Ag that the total mass percentage of secondary amounts is 10%, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, after solid-state mixing, put into the crucible vacuum melting of vacuum casting furnace, in liquid mixed smelting evenly rear cooled and solidified, continuous casting becomes hybrid alloys mother metal rod, through large, in, little, carefully, the passage cold-drawn such as micro-becomes the atomic thin silk thread between diameter 0.01mm ~ 0.03mm.
The making method of this kind of atomic thin bonding hybrid alloys silk, its step is as follows:
(1) solid-state mixing: to get primaries mass percentage be the total mass percentage of 90% high purity silver Ag and secondary amounts be 10% High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or to get primaries mass percentage be the total mass percentage of 90% High Purity Gold Au and secondary amounts is that 10% high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh mix solid-state;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over continuous casting of single crystal stove and be heated to whole melting of metal, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, the micro-atomic thin hybrid alloys silk passes of drawing such as drawing become 0.01mm ~ 0.03mm;
(4) cleaning annealing: atomic thin hybrid alloys silk step (3) obtained carries out cleaning, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
Embodiment two:
A kind of atomic thin bonding hybrid alloys silk, it comprises: be 80% high purity silver Ag by primaries mass percentage, the mass percentage adding secondary amounts total is the High Purity Gold Au of 20%, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or be 80% High Purity Gold Au by primaries mass percentage, add the high purity silver Ag that the total mass percentage of secondary amounts is 20%, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, after solid-state mixing, put into the crucible vacuum melting of vacuum casting furnace, in liquid mixed smelting evenly rear cooled and solidified, continuous casting becomes hybrid alloys mother metal rod, through large, in, little, carefully, the passage cold-drawn such as micro-becomes the atomic thin silk thread between diameter 0.01mm ~ 0.03mm.
The making method of this kind of atomic thin bonding hybrid alloys silk, its step is as follows:
(1) solid-state mixing: to get primaries mass percentage be the total mass percentage of 80% high purity silver Ag and secondary amounts be 20% High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or to get primaries mass percentage be the total mass percentage of 80% High Purity Gold Au and secondary amounts is that 20% high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh mix solid-state;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over continuous casting of single crystal stove and be heated to whole melting of metal, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, the micro-atomic thin hybrid alloys silk passes of drawing such as drawing become 0.01mm ~ 0.03mm;
(4) cleaning annealing: atomic thin hybrid alloys silk step (3) obtained carries out cleaning, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
Embodiment three:
A kind of atomic thin bonding hybrid alloys silk, it comprises: be 70% high purity silver Ag by primaries mass percentage, adds High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh that the total mass percentage of secondary amounts is 30%; Or be 70% High Purity Gold Au by primaries mass percentage, add high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh that the total mass percentage of secondary amounts is 30%, after solid-state mixing, put into the crucible vacuum melting of vacuum casting furnace, liquid mixed smelting evenly after cooled and solidified, continuous casting become hybrid alloys mother metal rod, become the atomic thin silk thread between diameter 0.01mm ~ 0.03mm through the passage cold-drawn such as large, medium and small, thin, micro-.
The making method of this kind of atomic thin bonding hybrid alloys silk, its step is as follows:
(1) solid-state mixing: to get primaries mass percentage be the total mass percentage of 70% high purity silver Ag and secondary amounts be 30% High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or to get primaries mass percentage be the total mass percentage of 70% High Purity Gold Au and secondary amounts is that 30% high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh mix solid-state;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over continuous casting of single crystal stove and be heated to whole melting of metal, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, the micro-atomic thin hybrid alloys silk passes of drawing such as drawing become 0.01mm ~ 0.03mm;
(4) cleaning annealing: atomic thin hybrid alloys silk step (3) obtained carries out cleaning, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
Embodiment four:
A kind of atomic thin bonding hybrid alloys silk, it comprises: be 60% high purity silver Ag by primaries mass percentage, adds High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh that the total mass percentage of secondary amounts is 40%; Or be 60% High Purity Gold Au by primaries mass percentage, add high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh that the total mass percentage of secondary amounts is 40%, the crucible vacuum melting of vacuum casting furnace is put into after solid-state mixing, liquid mixed smelting evenly after cooled and solidified, continuous casting become hybrid alloys mother metal rod, become the atomic thin silk thread between diameter 0.01mm ~ 0.03mm through the passage cold-drawn such as large, medium and small, thin, micro-.
The making method of this kind of atomic thin bonding hybrid alloys silk, its step is as follows:
(1) solid-state mixing: to get primaries mass percentage be the total mass percentage of 60% high purity silver Ag and secondary amounts be 40% High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or to get primaries mass percentage be the total mass percentage of 60% High Purity Gold Au and secondary amounts is that 40% high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh mix solid-state;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over continuous casting of single crystal stove and be heated to whole melting of metal, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, the micro-atomic thin hybrid alloys silk passes of drawing such as drawing become 0.01mm ~ 0.03mm;
(4) cleaning annealing: atomic thin hybrid alloys silk step (3) obtained carries out cleaning, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
Embodiment five:
A kind of atomic thin bonding hybrid alloys silk, it comprises: be 50% high purity silver Ag by primaries mass percentage, the mass percentage adding secondary amounts total is the High Purity Gold Au of 50%, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or be 50% High Purity Gold Au by primaries mass percentage, add the high purity silver Ag that the total mass percentage of secondary amounts is 50%, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, after solid-state mixing, put into the crucible vacuum melting of vacuum casting furnace, in liquid mixed smelting evenly rear cooled and solidified, continuous casting becomes hybrid alloys mother metal rod, through large, in, little, carefully, the passage cold-drawn such as micro-becomes the atomic thin silk thread between diameter 0.01mm-0.03mm.
The making method of this kind of atomic thin bonding hybrid alloys silk, its step is as follows:
(1) solid-state mixing: to get primaries mass percentage be the total mass percentage of 50% high purity silver Ag and secondary amounts be 50% High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh, or to get primaries mass percentage be the total mass percentage of 50% High Purity Gold Au and secondary amounts is that 50% high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh mix solid-state;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over continuous casting of single crystal stove and be heated to whole melting of metal, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, the micro-atomic thin hybrid alloys silk passes of drawing such as drawing become 0.01mm ~ 0.03mm;
(4) cleaning annealing: atomic thin hybrid alloys silk step (3) obtained carries out cleaning, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
By the bonding hybrid alloys silk of above-mentioned manufacture, sampling 100mm, the silk thread breaking load recorded on strength tester with 10mm/min speed and unit elongation, and put into thermal shock case by by the LED lamp bead after this bonding packaging, set within the scope of-40 DEG C ~ 150 DEG C, temperature transition time 8S carries out shock test, and to obtain data as shown in the table.
| Wire diameter | Breaking load | Unit elongation | Cold punching number of times |
| 0.018mm | ＞6cN | 9-12％ | More than 300 times |
| 0.020mm | ＞7cN | 11-13％ | More than 300 times |
| 0.023mm | ＞8cN | 13-16％ | More than 300 times |
| 0.025mm | ＞10cN | 13-16％ | More than 300 times |
| 0.028mm | ＞12cN | 14-17％ | More than 300 times |
| 0.030mm | ＞16cN | 14-17％ | More than 300 times |
As can be seen from the above table, the bonding hybrid alloys silk mechanical property that the present invention manufactures is excellent, cold-hot impacts good stability, meets the performance requriements of the encapsulation bonding wires such as domestic semiconducter device, LED chip, aviation circuit card completely.
The invention provides a kind of atomic thin bonding hybrid alloys silk and preparation method thereof, this kind of hybrid alloys silk adds micro-different from existing bonding gold wire, bonding filamentary silver or bonding Silver alloy wire, bonding hybrid alloys silk is by the hybrid alloys novel material of primary and secondary quantitative elements at solid-state mixing, liquid consolute, there is better mechanical property, conductive radiator performance and bonding performance, be more conducive to fine drawing and thin space, long distance bonding than spun gold; Be applied to LED industry, can beat monocrystalline, twin crystal and polycrystalline, compared with spun gold, camber is lower, and the light decay time is also good than spun gold, can increase the brightness of lamp pearl, is more suitable for the package lead being used as backlight, also can be used for aviation circuit card and make conductor material; Bonding hybrid alloys silk is except having the same cost advantage of silver alloy wire and performance advantage; silver alloy wire more can be avoided very easily to be oxidized the shortcoming with sulfuration; without the need to adding the protection of inert gas such as nitrogen in bonding process; the probability of inclined ball or sliding ball also reduces greatly; in residue test, residual gold is equally matched with proof gold line; more stable, cold-hot number of shocks is higher.Bonding hybrid alloys silk possesses stability and the plasticity-of proof gold line, possesses again high conductivity and the low-cost advantage of silver alloy wire, because of but substitute the optimal selection of gold thread and silver alloy wire.
More than show and describe ultimate principle of the present invention, principal character and advantage.The technician of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (4)
1. an atomic thin bonding hybrid alloys silk, is characterized in that: this hybrid alloys silk for primaries, adds secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh with high purity silver Ag; Or with High Purity Gold Au for primaries, add secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh element, the atomic thin hybrid alloys silk thread of mixing founding drawing.
2. a kind of atomic thin bonding hybrid alloys silk according to claim 1, it is characterized in that: described with high purity silver Ag for primaries, namely the mass percentage of high purity silver is 50% ~ 90%, and the mass percentage adding secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh total is 10% ~ 50%; Or with High Purity Gold Au for primaries, namely the mass percentage of High Purity Gold is 50% ~ 90%, the mass percentage adding secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh total is 10% ~ 50%.
3. a kind of atomic thin bonding hybrid alloys silk according to claim 1 or 2, is characterized in that: the purity of described high purity silver Ag or High Purity Gold Au is more than 99.99%, and the purity of High Purity Palladium Pd, high-purity platinum Pt and High Purity Rhodium Rh is more than 99.9%.
4. make a method for atomic thin bonding hybrid alloys silk as claimed in claim 3, it is characterized in that: the step of this making method is as follows:
(1) solid-state mixing: get primaries high purity silver Ag and secondary amounts High Purity Gold Au, High Purity Palladium Pd, high-purity platinum Pt, High Purity Rhodium Rh, or get primaries High Purity Gold Au and mix in solid-state with secondary amounts high purity silver Ag, High Purity Palladium Pd, high-purity platinum Pt, High Purity Rhodium Rh;
(2) founding hybrid alloys mother metal: vacuumize in the crucible solid mixt that step (1) obtains being positioned over same continuous casting of single crystal stove and be heated to whole metal and dissolve, liquid mixed smelting evenly after directional freeze, continuous casting become 8mm hybrid alloys mother metal rod;
(3) drawing silk material: the 8mm hybrid alloys mother metal rod that step (2) is obtained through excessively to draw, in draw, littlely to draw, carefully draw, micro-hybrid alloys silk drawing operation to be drawn into diameter 0.01mm ~ 0.03mm;
(4) cleaning annealing: the hybrid alloys silk that step (3) obtains carried out clean, anneal, air-dry;
(5) after-combustion bundling: according to different purposes after-combustion bundling, packaging final prod.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925831A (en) * | 2016-05-06 | 2016-09-07 | 河南理工大学 | Production method of high-strength silver alloy bonding wire for encapsulating low-radian LEDs |
| CN105950899A (en) * | 2016-05-06 | 2016-09-21 | 河南优克电子材料有限公司 | Manufacturing method of micro-fine silver alloy bonding wire for low-radian LED packaging |
| CN109321774A (en) * | 2018-12-04 | 2019-02-12 | 北京椿树电子材料有限公司 | A kind of compound bonding material of high-performance silver palladium |
| CN109599381A (en) * | 2018-11-30 | 2019-04-09 | 合肥中晶新材料有限公司 | A kind of fixed proportion auri/silver-based bonding line and preparation method thereof |
| CN111081670A (en) * | 2019-12-18 | 2020-04-28 | 浙江大学 | Low-cost silver-based bonding alloy wire and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418001A (en) * | 2011-11-16 | 2012-04-18 | 浙江佳博科技股份有限公司 | Bonding gold wire and preparation method thereof |
| CN102776408A (en) * | 2012-08-16 | 2012-11-14 | 烟台一诺电子材料有限公司 | Silver alloy wire and preparation method thereof |
| CN104716250A (en) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | Extremely fine gold free silver alloy gold-plating bonding wire and manufacture method thereof |
-
2016
- 2016-02-18 CN CN201610092089.8A patent/CN105543532A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418001A (en) * | 2011-11-16 | 2012-04-18 | 浙江佳博科技股份有限公司 | Bonding gold wire and preparation method thereof |
| CN102776408A (en) * | 2012-08-16 | 2012-11-14 | 烟台一诺电子材料有限公司 | Silver alloy wire and preparation method thereof |
| CN104716250A (en) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | Extremely fine gold free silver alloy gold-plating bonding wire and manufacture method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925831A (en) * | 2016-05-06 | 2016-09-07 | 河南理工大学 | Production method of high-strength silver alloy bonding wire for encapsulating low-radian LEDs |
| CN105950899A (en) * | 2016-05-06 | 2016-09-21 | 河南优克电子材料有限公司 | Manufacturing method of micro-fine silver alloy bonding wire for low-radian LED packaging |
| CN109599381A (en) * | 2018-11-30 | 2019-04-09 | 合肥中晶新材料有限公司 | A kind of fixed proportion auri/silver-based bonding line and preparation method thereof |
| CN109321774A (en) * | 2018-12-04 | 2019-02-12 | 北京椿树电子材料有限公司 | A kind of compound bonding material of high-performance silver palladium |
| CN111081670A (en) * | 2019-12-18 | 2020-04-28 | 浙江大学 | Low-cost silver-based bonding alloy wire and preparation method and application thereof |
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Application publication date: 20160504 |