JPH059624A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPH059624A JPH059624A JP3187003A JP18700391A JPH059624A JP H059624 A JPH059624 A JP H059624A JP 3187003 A JP3187003 A JP 3187003A JP 18700391 A JP18700391 A JP 18700391A JP H059624 A JPH059624 A JP H059624A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- weight
- bonding wire
- wire
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01205—5N purity grades, i.e. 99.999%
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体素子上のチップ電
極と外部リードを接続するために用いるボンデイングワ
イヤーに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting a chip electrode on a semiconductor device and an external lead.
【0002】[0002]
【従来の技術】トランジスタ、IC、LSIなどの半導
体素子のチップ電極と外部リードとの結線用として多く
用いられている金線は、その機械的及び、耐熱強度を向
上させるために純度99.999重量%以上の高純度金
に、他金属元素を微量添加する方法が取られている。例
えば、高純度金にCa、Be、Geを含有させた組成の
もの(特公昭57−35577号公報)、La等の希土
類、Ca、Be、Geを含有させた組成のもの(特公平
2−12022号公報)等が提案されている。2. Description of the Related Art Gold wires, which are often used for connecting chip electrodes of semiconductor elements such as transistors, ICs, and LSIs to external leads, have a purity of 99.999 in order to improve their mechanical strength and heat resistance. A method of adding a trace amount of another metal element to high-purity gold of not less than wt% has been adopted. For example, high purity gold containing Ca, Be and Ge (Japanese Patent Publication No. 57-35577) and La containing rare earth elements such as La, Ca, Be and Ge (Japanese Patent Publication No. No. 12022) is proposed.
【0003】しかしながら最近の半導体デバイスの多ピ
ン化傾向にともなう外部リードの長尺化によってボンデ
イング工程あるいはそれ以降の工程で発生する振動によ
り金ボールネック部が破断するという現象が見られるよ
うになってきた。この破断原因は、ボール形成時に金線
が受ける熱影響によりボール直上の結晶組織が粗大化し
た再結晶組織となり、ボール形成以前の金線の7割程度
の強度に低下してしまうためである。However, due to the recent trend of increasing the number of pins in semiconductor devices, the lengthening of the external leads has led to the phenomenon that the gold ball neck portion is broken due to vibrations generated in the bonding process and subsequent processes. It was The cause of this fracture is that the crystal structure immediately above the ball becomes a coarse recrystallized structure due to the heat effect on the gold wire during ball formation, and the strength is reduced to about 70% of the strength of the gold wire before ball formation.
【0004】[0004]
【発明が解決しようとする課題】本発明は従来の合金金
線では十分な解決にいたらなかった、振動により金ボー
ル直上のネック部が破断するという問題を改善したボン
デイングワイヤーを提供せんとするものである。SUMMARY OF THE INVENTION The present invention aims to provide a bonding wire that has solved the problem that the neck portion just above the gold ball is broken by vibration, which has not been solved sufficiently by the conventional alloy gold wire. Is.
【0005】[0005]
【課題を解決するための手段】本発明のボンデイングワ
イヤーは純度99.999重量%以上の高純度金に、E
uを0.00002〜0.004重量%、Caを0.0
001〜0.003重量%、Geを0.0001〜0.
003重量%、及びBeを0.0001〜0.001重
量%含有せしめて合金線とした点に特徴がある。The bonding wire of the present invention is made of high purity gold having a purity of 99.999% by weight or more, and E
u is 0.00002 to 0.004% by weight and Ca is 0.0
001-0.003% by weight, Ge 0.0001-0.
The alloy wire is characterized by containing 003% by weight and 0.0001 to 0.001% by weight of Be.
【0006】[0006]
【作用】Euは金線の機械的強度を高め金ボールを形成
する際の熱影響によるボール直上の結晶粒の粗大化を防
ぐ効果があり、Caと共存するとその効果は顕著とな
る。Euが0.004重量%を超えるとループ高さが低
くなり、0.00002重量%未満では前記の効果が不
充分なので、0.00002〜0.004重量%である
ことが必要である。La、Ce等の希土類元素も前記の
効果が認められるが、Euを含有させた時に0.000
02重量%といった極小値でも効果が大きいのは、Eu
がLa、Ce等の他の希土類元素と比較して原子半径、
イオン半径等の物性値が特異な値を持つ為と考える。Function Eu has the effect of increasing the mechanical strength of the gold wire and preventing the coarsening of the crystal grains directly above the ball due to the heat effect when forming the gold ball, and when coexisting with Ca, the effect becomes remarkable. If Eu exceeds 0.004% by weight, the loop height becomes low, and if it is less than 0.00002% by weight, the above effect is insufficient. Therefore, 0.00002 to 0.004% by weight is necessary. The rare earth elements such as La and Ce also have the above-mentioned effect, but when containing Eu, the content is 0.000.
Even if the minimum value is 02% by weight, the effect is large.
Is an atomic radius compared to other rare earth elements such as La and Ce,
It is considered that the physical properties such as the ionic radius have unique values.
【0007】CaはEuと同様に金線の機械的強度を高
め金ボールを形成する際の熱影響によるボール直上の結
晶粒の粗大化を防ぐ効果があるが、含有率が0.000
1重量%未満では効果がなく、0.003重量%を超え
ると機械的強度の向上が著しく低下し、金ボールを形成
する際にボール表面にCaが析出して、チップ電極との
接合性を阻害するので、0.0001〜0.003重量
%含有することが必要である。[0007] Ca, like Eu, has the effect of increasing the mechanical strength of the gold wire and preventing the coarsening of the crystal grains directly above the ball due to the heat effect when forming the gold ball, but its content is 0.000.
If it is less than 1% by weight, there is no effect, and if it exceeds 0.003% by weight, the improvement in mechanical strength is remarkably reduced, and Ca is deposited on the surface of the gold ball when it is formed, and the bondability with the chip electrode is Since it inhibits, it is necessary to contain 0.0001 to 0.003% by weight.
【0008】GeはCaを添加したワイヤーの機械的強
度を安定させるのに効果がある。Beはループ形状を改
善し含有率が高いほどループ高さは高くなるが、0.0
001重量%未満では効果がなく0.001重量%を超
えるとボール直上の結晶粒界の脆化を生じる。Eu、C
aは添加量が増えるに従ってループ高さを低下させるた
め、Beの添加によるループ高さの改善が必要となる。Ge is effective in stabilizing the mechanical strength of a wire containing Ca. Be improves the loop shape and the higher the content, the higher the loop height, but 0.0
If it is less than 001% by weight, there is no effect, and if it exceeds 0.001% by weight, the crystal grain boundary immediately above the ball becomes brittle. Eu, C
Since a decreases the loop height as the addition amount increases, it is necessary to improve the loop height by adding Be.
【0009】[0009]
【実施例】純度99.999重量%以上の高純度金に、
Eu等を種々の組成になるように添加し、高周波誘導炉
で水素ガス中で高純度カーボンルツボを用いて溶解し、
母合金を得た。この母合金と高純度金を配合して表1に
示す組成の金合金を高周波誘導炉で真空中で高純度カー
ボンルツボを用いて溶解した。次に溝ロール加工を施し
た後、線引き加工で直径0.03mmまで伸線した。Example: For high-purity gold having a purity of 99.999% by weight or more,
Eu or the like is added to have various compositions, and melted in a high-frequency induction furnace in hydrogen gas using a high-purity carbon crucible,
A mother alloy was obtained. This master alloy and high-purity gold were mixed, and a gold alloy having the composition shown in Table 1 was melted in a high-frequency induction furnace in a vacuum using a high-purity carbon crucible. Next, after groove groove processing was performed, wire drawing was performed to draw wire with a diameter of 0.03 mm.
【0010】得られたボンデイングワイヤーを用いて表
1に示した接合性等の特性を調査した。常温抗張力はこ
のワイヤーを室温における破断伸びが6%になるように
熱処理し、常温での引っ張り試験を行った。その結果を
表1に示す。繰返し曲げ試験は、図1のように金メッキ
リードフレーム(7mm×7mm)上にボールボンデイ
ングした(10cm長さのワイヤーを超音波熱圧着させ
た。ボール径は90ミクロン)ワイヤー先端に重り
(0.5g)をぶら下げ、ワイヤーと+45°〜−45
°の角度をなすようにボンデイング面を回転させてネッ
ク部の繰り返し曲げ(20回/分)を行い、破断までの
曲げ回数によりネック部の疲労強度を比較した。その結
果を表1に示した。The bondability and other characteristics shown in Table 1 were investigated using the obtained bonding wire. For tensile strength at room temperature, this wire was heat-treated so that the breaking elongation at room temperature was 6%, and a tensile test was carried out at room temperature. The results are shown in Table 1. In the repeated bending test, as shown in FIG. 1, ball bonding (10 cm long wire was ultrasonically thermocompression bonded onto a gold-plated lead frame (7 mm × 7 mm). Ball diameter was 90 μm). 5g) hanging, wire and + 45 ° -45
The necking portion was repeatedly bent (20 times / minute) by rotating the bonding surface so as to form an angle of °, and the fatigue strength of the neck portion was compared by the number of times of bending until breakage. The results are shown in Table 1.
【0011】[0011]
【表1】 [Table 1]
【0012】表1において、ループ高さは、金属顕微鏡
を用いてリードフレーム面にピントを合わせた際と、ロ
ープ最高部にピントを合わせた際の相対変位量を求め
た。接合性は、圧着したボールをはがす際に要する力
(シエア強度)により評価した。In Table 1, the loop height was obtained by using a metallurgical microscope to determine the relative displacement amount when the lead frame surface was focused and when the rope highest portion was focused. The bondability was evaluated by the force (shear strength) required for peeling the pressure-bonded ball.
【0013】試験番号1〜9と10〜14との比較によ
り本発明によるボンデイングワイヤーは、接合性等のボ
ンデイングワイヤーとしての特性が優秀で、特に繰り返
し曲げ試験の回数が多く、振動に対する強度が大きいこ
とが判る。By comparing Test Nos. 1 to 9 and 10 to 14, the bonding wire according to the present invention has excellent properties such as bondability as a bonding wire, and particularly, the number of repeated bending tests is large and the strength against vibration is large. I understand.
【0014】[0014]
【発明の効果】以上の結果より本発明の金線は従来のボ
ンデイングワイヤーの欠点を解消しボンデイング工程の
歩留り向上及び信頼性の向上を可能にするものである。As described above, the gold wire of the present invention eliminates the drawbacks of the conventional bonding wire and enables the yield and reliability of the bonding process to be improved.
【図1】図1は、繰り返し曲げ試験の概要を示した図で
ある。FIG. 1 is a diagram showing an outline of a repeated bending test.
1 金メッキリードフレーム 2 ボールネック部 3 ボンデイングワイヤー 4 重り 1 Gold-plated lead frame 2 Ball neck 3 Bonding wire 4 Weight
Claims (1)
に、Euを0.00002〜0.004重量%、Caを
0.0001〜0.003重量%、Geを0.0001
〜0.003重量%、及びBeを0.0001〜0.0
01重量%含有せしめた合金線からなるボンデイングワ
イヤー。Claims: 1. High purity gold having a purity of 99.999% by weight or more, 0.00002 to 0.004% by weight of Eu, 0.0001 to 0.003% by weight of Ca, and Ge. 0.0001
~ 0.003 wt% and Be 0.0001-0.0
A bonding wire made of an alloy wire containing 0.1% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3187003A JP2689773B2 (en) | 1991-07-02 | 1991-07-02 | Bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3187003A JP2689773B2 (en) | 1991-07-02 | 1991-07-02 | Bonding wire |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH059624A true JPH059624A (en) | 1993-01-19 |
JP2689773B2 JP2689773B2 (en) | 1997-12-10 |
Family
ID=16198506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3187003A Expired - Lifetime JP2689773B2 (en) | 1991-07-02 | 1991-07-02 | Bonding wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2689773B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0743679A3 (en) * | 1995-05-17 | 1997-02-26 | Tanaka Electronics Ind | Gold wire for chip bonding |
EP0822264A1 (en) * | 1996-07-31 | 1998-02-04 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold alloy wire for wedge bonding and use thereof for wedge bonding |
WO2007093380A1 (en) * | 2006-02-13 | 2007-08-23 | W.C. Heraeus Gmbh | Bonding wire |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735577A (en) * | 1980-08-11 | 1982-02-26 | Nippon Petrochem Co Ltd | Glycidic ester and its preparation |
JPS6179741A (en) * | 1984-09-27 | 1986-04-23 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JPH0212022A (en) * | 1988-06-30 | 1990-01-17 | Canon Inc | Superconductive photodetector element |
-
1991
- 1991-07-02 JP JP3187003A patent/JP2689773B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735577A (en) * | 1980-08-11 | 1982-02-26 | Nippon Petrochem Co Ltd | Glycidic ester and its preparation |
JPS6179741A (en) * | 1984-09-27 | 1986-04-23 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JPH0212022A (en) * | 1988-06-30 | 1990-01-17 | Canon Inc | Superconductive photodetector element |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0743679A3 (en) * | 1995-05-17 | 1997-02-26 | Tanaka Electronics Ind | Gold wire for chip bonding |
US5702814A (en) * | 1995-05-17 | 1997-12-30 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold wire for bonding |
EP0822264A1 (en) * | 1996-07-31 | 1998-02-04 | Tanaka Denshi Kogyo Kabushiki Kaisha | Gold alloy wire for wedge bonding and use thereof for wedge bonding |
WO2007093380A1 (en) * | 2006-02-13 | 2007-08-23 | W.C. Heraeus Gmbh | Bonding wire |
JP2009527111A (en) * | 2006-02-13 | 2009-07-23 | ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Bonding wire |
Also Published As
Publication number | Publication date |
---|---|
JP2689773B2 (en) | 1997-12-10 |
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